TW201933417A - 具有多個嵌入式電極的基板支撐件 - Google Patents

具有多個嵌入式電極的基板支撐件 Download PDF

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TW201933417A
TW201933417A TW107125613A TW107125613A TW201933417A TW 201933417 A TW201933417 A TW 201933417A TW 107125613 A TW107125613 A TW 107125613A TW 107125613 A TW107125613 A TW 107125613A TW 201933417 A TW201933417 A TW 201933417A
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菲利浦亞倫 克勞司
泰正 蔡
趙在龍
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美商應用材料股份有限公司
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Abstract

提供了一種用於在電漿輔助處理腔室中偏壓基板的區域的方法和設備。偏壓基板（或基板的區域）增加了在基板與處理腔室中形成的電漿之間的電位差，從而將來自電漿的離子加速到基板區域的有效表面。於此的複數個偏壓電極以有利於管理跨越基板的處理結果的均勻性的圖案的方式跨越基板支撐件而空間地佈置。

Description

具有多個嵌入式電極的基板支撐件
於此描述的實施例一般關於在半導體製造中使用的處理腔室，具體地，關於具有被配置為偏壓基板的基板支撐組件的處理腔室和偏壓基板的方法。
可靠地產生高深寬比特徵是半導體裝置的下一代超大型積體電路（VLSI）和極大型積體電路（ULSI）的關鍵技術挑戰之一。形成高深寬比特徵的一種方法使用電漿輔助蝕刻處理以在基板的材料層（諸如介電層）中形成高深寬比開口。在典型的電漿輔助蝕刻處理中，在處理腔室中形成電漿，且來自電漿的離子朝向基板及在基板上的遮罩中形成的開口加速，以在遮罩表面下方的材料層中形成開口。通常，藉由將400 kHz至2 MHz的範圍中的低頻RF電力耦合到基板，離子朝向基板加速，從而在基板上產生偏壓電壓。然而，將RF電力耦合到基板不會相對於電漿向基板施加單一電壓。在常用配置中，在基板和電漿之間的電位差以RF電力的頻率從接近零值振盪到最大負值。缺少單一電位（將從電漿加速離子到基板）導致在基板表面處和在基板的材料層中形成的開口（特徵）中的大範圍的離子能量。另外，由RF偏壓產生的不同離子軌跡相對於基板表面而產生離子的大角度分佈。當蝕刻高深寬比特徵的開口時，大範圍的離子能量是不期望的，因為離子沒有以足夠高的能量到達特徵的底部，以維持期望的蝕刻速率。相對於基板表面的離子的大角度分佈是不期望的，因為其導致特徵輪廓的變形，諸如在特徵的垂直側壁中的頸縮和彎曲。
因此，本領域中存在有能夠在電漿輔助蝕刻處理期間在基板的材料表面處提供具有低角度分佈的窄範圍的高能量離子的需求。
本揭露書一般關於電漿輔助或電漿增強處理腔室。更具體地，於此的實施例關於被配置為在電漿輔助或電漿增強半導體製造處理期間向基板的區域提供單獨的脈衝（循環）DC電壓的靜電吸盤（ESC）基板支撐件和偏壓基板的區域的方法。
在一個實施例中，提供了一種基板支撐組件，包括基板支撐件，基板支撐件包含：複數個第一電極，在基板支撐件內，複數個第一電極的每個電極與複數個第一電極的每個其他電極電隔離且共面，其中複數個第一電極的每個電極被配置為經由與基板的區域電容耦合而向基板的區域提供脈衝DC電力；及第二電極，設置在基板支撐件內並且與複數個第一電極電隔離，用於將基板電夾持到基板支撐件上。
其他實施例提供了一種處理腔室，包含：一個或多個側壁和底部，界定處理容積；及基板支撐件。基板支撐件包含：複數個第一電極，在基板支撐件內，複數個第一電極的每個電極與複數個第一電極的每個其他電極電隔離且共面，其中複數個第一電極的每個電極被配置為經由與基板的區域電容耦合而向基板的區域提供脈衝DC偏壓；及第二電極，設置在基板支撐件內並與複數個第一電極電隔離，用於將基板電夾持到基板支撐件。
在另一個實施例中，提供了一種用複數個循環DC電壓偏壓基板的方法。方法包括以下步驟：使處理氣體流到處理腔室中；從處理氣體形成電漿；將基板電夾持到設置在處理腔室中的基板支撐件；及跨越複數個區域偏壓基板。跨越複數個區域偏壓基板包含以下步驟：將經由開關系統而提供給設置在基板支撐件中的複數個偏壓電極的複數個循環DC電壓經由基板支撐件的第一介電層的電容而耦合到基板的相應區域。於此的複數個循環DC電壓包括一定範圍的頻率及/或多個極性。
本揭露書的實施例一般關於電漿處理腔室，諸如電漿輔助或電漿增強處理腔室。更具體地，於此的實施例關於被配置為在電漿輔助或電漿增強半導體製造處理期間向設置在靜電吸盤（ESC）基板支撐件上的基板提供電容耦合的脈衝DC電壓的靜電吸盤（ESC）基板支撐件。將基板電容耦合到循環DC電源（在基板上放置脈衝DC偏壓）增加了在基板與處理腔室中形成的電漿之間的電位差，從而將離子從電漿加速到基板的有效表面。與RF偏壓相反，脈衝DC偏壓為離子從電漿加速到基板提供單一電位。於此的基板支撐件包括複數個偏壓電極，每個偏壓電極獨立地耦合到脈衝DC電力供應器開關系統的部分，且每個偏壓電極配置成藉由與基板的區域電容耦合來提供基板的區域的可調諧偏壓。於此的複數個偏壓電極以有利於管理跨越基板的處理結果的均勻性的圖案的方式跨越基板支撐件而空間地佈置。
第1圖是根據一個實施例的處理腔室100的示意性剖視圖，處理腔室100具有靜電吸盤（ESC）基板支撐組件200設置於中。在這個實施例中，處理腔室100是電漿處理腔室，諸如電漿蝕刻腔室、電漿增強沉積腔室（例如電漿增強化學氣相沉積（PECVD）腔室或電漿增強原子層沉積（ PEALD）腔室）或基於電漿的離子佈植腔室（例如電漿摻雜（PLAD）腔室）。
處理腔室100的特徵在於界定處理容積120的腔室蓋103、一個或多個側壁102和腔室底部104。噴頭112（具有複數個開口118設置成通過噴頭112）設置在腔室蓋103中，並用以將處理氣體從氣體入口114均勻地分配到處理容積120中。噴頭112耦合到RF電力供應器142（或在一些實施例中，VHF電力供應器），RF電力供應器142從處理氣體經由電容耦合而點燃電漿135。處理容積120通過真空出口152而流體耦接到真空，諸如流體耦接到一個或多個專用真空泵，真空出口152將處理容積120保持在低於大氣壓的條件下，並從處理容積120排出處理氣體和其他氣體。設置在處理容積120中的基板支撐組件200設置在支撐軸124上，支撐軸124密封地延伸通過腔室底部104。支撐軸124耦接到控制器140，控制器140升高和降低支撐軸124和設置在支撐軸124上的基板支撐組件200，以促進基板115的處理和將基板115傳送進出處理腔室100。通常，當基板支撐組件200處於升高或處理位置時，基板115與噴頭112間隔開在約0.75英寸和1.75英寸之間，諸如約1.25英寸。
基板115通過一個或多個側壁102的一個中的開口126裝載到處理容積120中，開口126通常在基板115處理期間用門或閥（未顯示）密封。設置在升降銷箍134之上方的複數個升降銷136可移動地設置通過基板支撐組件200，以促進將基板115往返傳送於基板支撐組件200。升降銷箍134耦接到升降箍軸131，升降箍軸131密封地延伸通過腔室底部104，升降箍軸131藉由致動器130升高和降低升降銷箍134。基板支撐組件200具有基板支撐件227，在基板支撐件227上設置基板用於處理。當升降銷箍134處於升高位置時，複數個升降銷136在基板支撐件227的表面之上方延伸，從而從基板支撐件227的表面升降基板115並能夠藉由機器人處理器（未顯示）接近基板115。當升降銷箍134處於降低位置時，複數個升降銷136與基板支撐件227的表面齊平或在其下方，且基板115直接安置在基板支撐件227的表面上以進行處理。
於此的基板支撐組件200包括冷卻基座125。基板支撐件227熱耦合到冷卻基座125並設置在冷卻基座125上。基板支撐組件200的冷卻基座125用以在處理期間調節基板支撐件227的溫度，並由此調節設置在基板支撐表面203上的基板115的溫度。於此，冷卻基座125包括設置在冷卻基座125中的一個或多個流體管道137，流體管道137流體耦接到冷卻劑源133（諸如製冷劑源或水源），並與冷卻劑源133流體連通。通常，冷卻基座125由耐腐蝕的導熱材料形成，諸如耐腐蝕金屬，例如鋁、鋁合金或不銹鋼，且藉由黏著劑或藉由機械手段而熱耦接到基板支撐件227。
在處理期間，基板115的離子轟擊將加熱基板115到可能不期望的高溫，因為處理容積120的低壓導致在基板115和基板支撐表面203之間的不良熱傳導。因此，在於此的實施例中，在處理期間，背側氣體被提供到在基板115和基板支撐表面203之間，其中背側氣體將基板115熱耦合到基板支撐表面203並增加其之間的熱傳遞。通常，基板支撐表面203包括從基板支撐表面203延伸的複數個檯面228，當基板115設置在基板支撐表面203上時，複數個檯面228能夠使背側側面氣體流到或佔據在基板115和基板支撐表面203之間的空間。背側氣體通過一個或多個氣體導管147而流到基板支撐表面203，一個或多個氣體導管147通過基板支撐件227設置。於此，一個或多個氣體導管147耦接到導熱惰性背側氣體源146，諸如氦氣源。
第2A圖是第1圖的處理腔室100中使用的基板支撐組件200的特寫剖視圖。第2B圖是第2A圖中所示的基板支撐組件200的俯視圖。於此，基板支撐件227包含第一層227A和第二層227B，其中每個層227AB由包含金屬氧化物或金屬氮化物的介電材料，或包含金屬氧化物或金屬氮化物的混合物的介電材料（諸如Al2 O3 、AlN、Y2 O3 或其組合）所形成。在一些實施例中，第一層227A由具有在約20 V/μm與約200 V/μm之間（諸如在約100 V/μm與約200 V/μm之間或在約20 V/μm和約100 V/μm之間）的擊穿電壓的介電材料形成。在一個實施例中，第一層227A由具有在約160 μm的擊穿電壓為9 kV的 99.5％的氧化鋁形成。在一些實施例中，在將大塊的介電材料研磨到期望的厚度D之前，藉由將大塊的介電材料接合到第二層227B及設置在第二層227B中或第二層227B上的複數個電極來形成基板支撐件227，以形成第一層227A。通常，第一層227A的厚度D在約5 μm和約300 μm之間，諸如在約100 μm和約300 μm之間，例如約160 μm。在其他實施例中，使用任何合適的塗佈方法（諸如CVD、PECVD、ALD、PEALD、蒸發、濺射、電漿弧塗佈、氣溶膠塗佈或其組合）來形成第一層227A。
於此的設置及/或嵌入在基板支撐件中的複數個電極包括複數個偏壓電極238A-C和單一ESC電極222。複數個偏壓電極的每個電極與複數個偏壓電極的每個其他電極電隔離，並與單一ESC電極222電隔離。於此的複數個偏壓電極238A-C的每個電極配置成經由與基板115的各個區域電容耦合而向基板115的各個區域提供一個或多個獨立的脈衝DC偏壓。單一ESC電極222藉由在基板115和基板支撐表面203之間提供電位而在基板115和基板支撐表面203之間提供夾持力。通常，ESC電極耦合到靜態DC電力供應器，於此提供在約-5000 V和約5000 V之間，諸如在約100 V和約4000 V之間，諸如在約1000 V和約3000 V之間，例如約2000V。
在於此的實施例中，基板支撐件227可被配置為支撐300 mm直徑的基板並可包括在2和20個之間的偏壓電極，諸如所示的三個偏壓電極238A-C，然而，用於處理更大基板及/或不同形狀的基板的更大的基板支撐件可包括任何數量的偏壓電極。複數個偏壓電極238A-C各自由一個或多個導電材料部分（諸如金屬網、箔、板或其組合）形成。在一些實施例中，複數個偏壓電極238A-C的每一者由多於一個不連續導電材料部分（諸如金屬網、箔、板或其組合）形成，不連續導電材料部分與設置在基板支撐件227中的一個或多個連接器電耦合（未顯示），使得電耦合的不連續材料部分包含單一電極，諸如中心偏壓電極238A、中間偏壓電極238B或外部偏壓電極238C。
複數個偏壓電極238A-C以有利於管理跨越基板115的處理結果的均勻性的圖案的方式跨越基板支撐件227而空間地佈置。在第2A圖所示的實施例中，中心偏壓電極238A的圓形板和偏壓電極238B-C的不連續環形區域界定複數個同心區域。可使用其他空間佈置，包括輻條圖案、網格圖案、線圖案、螺旋圖案、交叉圖案、隨機圖案或其組合。於此，複數個偏壓電極238A-C的每個電極與複數個偏壓電極的每個其他電極和單一ESC電極222共面。單一ESC電極222與基板支撐件227平面地設置並平行於基板支撐表面203。複數個偏壓電極238A-C的每個電極藉由形成在單一ESC電極222中的開口和藉由設置在其之間的基板支撐件227的介電材料而與單一ESC電極222電隔離。在其他實施例中，複數個偏壓電極208A-C的每個電極或複數個偏壓電極208A-C的每個電極的一部分與複數個偏壓電極的每個其他電極的至少一部分共面，且複數個偏壓電極208A-C比單一ESC電極222更接近基板支撐表面203。
於此，複數個偏壓電極238A-C的每一個獨立地電耦合到包含複數個固態脈衝發生器/切換器的DC電力供應器切換系統150的部分，於此，複數個第一開關S1、S3、S5和複數個第二開關S2、S4、S6能夠將高壓（HV）DC電力轉換為具有在約10 Hz（或更低）和約100 kHZ之間的頻率的循環DC電壓。複數個第一開關S1、S3、S5和複數個第二開關S2、S4、S6進一步能將高壓（HV）DC電力轉換為具有在2％至98％的範圍中的佔空比的循環DC電壓。開關S1-S6以一定頻率循環地操作或根據任何模式或無模式依需求而操作。複數個偏壓電極的每一個電耦合到複數個第一開關S1、S3、S5的一個以及複數個第二開關S2、S4、S6的一個。
於此，複數個第一開關S1、S3、S5電耦合到第一DC電壓源156B，第一DC電壓源156B可為（例如）正（+ve）電壓源，且複數個第二開關S2、S4、S6電耦合到第二DC電壓源156A，第二DC電壓源156A可為例如負（-ve）電壓源。在其他實施例中，兩個電壓源156A和156B可都是不同電壓的正源或都是不同電壓的負源。於此的第一和第二DC電壓源156B和156A在其各自的電壓幅度中提供在約0V和約10kV之間的DC偏壓（正或負）。
每組開關（諸如S1和S2、S3和S4，或S5和S6）獨立地操作，向基板支撐件227的各個偏壓電極238A-C提供正或負極性的循環DC電壓的單獨頻率、圖案或操作，並經由與基板115的相應區域電容耦合，向設置在基板支撐件227上的基板115的相應區域提供單獨的脈衝DC偏壓。通常，將負DC脈衝耦合到基板區域將增加在基板的區域和電漿135之間的電位差，其中基板區域在脈衝期間處於比電漿更負的電位。在這種負DC偏壓的情況下，電漿中的帶正電荷的物質將朝向基板區域的表面加速，從而實現基板區域的處理。將正DC脈衝耦合到基板區域將增加在基板區域和電漿135之間的電位差，其中基板區域在脈衝期間處於比電漿更正的電位。在這種正DC偏壓的情況下，電漿中的帶負電荷的物質將朝向基板區域的表面加速，從而實現基板區域的處理。對於提供給不同基板區域的正和負DC偏壓條件而言，調整循環DC電壓的頻率、佔空比及/或持續時間的能力允許微調跨越基板的處理均勻性及跨越基板的改進。在其他有用的屬性中，施加正和負DC偏壓脈衝的能力提供了基板區域的電荷中和，其中基板區域的表面可週期性地進入中性電荷狀態。
第3圖是顯示根據於此描述的實施例的在電漿輔助處理期間偏壓基板的區域的方法300的流程圖。在310處，方法300包括使處理氣體流到處理腔室中，且在320處，方法包括從處理氣體形成電漿。
在330處，方法包括300使用設置在基板支撐件中的夾持電極將基板電夾持到設置在處理腔室中的基板支撐件，基板支撐件包含第一介電層和第二介電層。
在340處，方法300包括向設置在基板支撐件中的複數個偏壓電極提供複數個循環DC電壓，其中每個相應的循環DC電壓經由與基板的區域電容耦合向基板的區域提供單獨的脈衝DC偏壓。在一些實施例中，複數個循環DC電壓包含多於一個極性、多於一個頻率、多於一個佔空比及/或多於一個持續時間。脈衝DC偏壓使得在330處形成的電漿中的離子朝向基板加速，以在基板上執行材料處理（諸如沉積或移除）。應當注意電漿也可在320之後、330之後、340之後或350之後形成。
於此所述的基板支撐組件和方法在與使用靜電夾持力兼容的電漿輔助處理期間實現了電容耦合脈衝DC偏壓基板。脈衝DC偏壓允許增加對基板表面及/或基板表面的區域處和基板表面中形成的特徵開口中的離子能量和角度分佈的控制。這種增加的控制至少在形成高深寬比特徵及/或需要方形的蝕刻輪廓的特徵時是期望的，諸如在用於淺溝槽隔離（STI）應用的矽蝕刻，或在FinFET技術中使用的矽鰭片。將不同頻率、佔空比、極性及/或持續時間的DC脈衝施加到基板的不同區域的能力使得能夠微調跨越基板的處理均勻性及跨越基板的改進。
雖然前述內容涉及本揭露書的實施例，但是可在不背離本揭露書的基本範圍的情況下設計本揭露書的其他和進一步的實施例，且本揭露書的範圍由以下的申請專利範圍而確定。
100‧‧‧處理腔室
102‧‧‧側壁
103‧‧‧腔室蓋
112‧‧‧噴頭
114‧‧‧氣體入口
115‧‧‧基板
116 118‧‧‧開口
120‧‧‧處理容積
124‧‧‧支撐軸
125‧‧‧冷卻基座
126‧‧‧開口
130‧‧‧致動器
131‧‧‧升降箍軸
133‧‧‧冷卻劑源
134‧‧‧升降銷箍
135‧‧‧電漿
136‧‧‧升降銷
137‧‧‧流體管道
140‧‧‧控制器
142‧‧‧RF電力供應器
146‧‧‧導熱惰性背側氣體源
147‧‧‧氣體導管
150‧‧‧DC電力供應器切換系統
152‧‧‧真空出口
156A‧‧‧第二DC電壓源
156B‧‧‧第一DC電壓源
158 200‧‧‧基板支撐組件
203‧‧‧基板支撐表面
208A‧‧‧偏壓電極
222‧‧‧單一ESC電極
227‧‧‧基板支撐件
227A‧‧‧第一層
227B‧‧‧第二層
228‧‧‧突起
238A‧‧‧偏壓電極
238B‧‧‧偏壓電極
238C‧‧‧偏壓電極
300‧‧‧方法
310‧‧‧活動
320‧‧‧活動
330‧‧‧活動
340‧‧‧活動
因此，可詳細地理解本揭露書的上述特徵的方式，可藉由參考實施例而獲得上面簡要概述的本揭露書的更具體的描述，其中一些實施例顯示在附隨的圖式中。然而，應注意附隨的圖式僅顯示了本揭露書的典型實施例，且因此不應視為限制本揭露書的範圍，因為本揭露書可允許其他同等有效的實施例。
第1圖是根據一個實施例的處理腔室的示意性剖視圖，其中靜電吸盤（ESC）基板支撐組件設置在的處理腔室中。
第2A圖是在第1圖的處理腔室中使用的基板支撐組件的特寫剖視圖。
第2B圖是第2A圖中所示的基板支撐組件的俯視圖。
第3圖是顯示根據於此描述的實施例的在電漿輔助處理期間偏壓基板的區域的方法的流程圖。
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Claims (20)

  1. 一種基板支撐組件，包含： 複數個第一電極，在該基板支撐件內，該複數個第一電極的每個電極與該複數個第一電極的每個其他電極電隔離且共面，其中該複數個第一電極的每個電極被配置為經由與一基板的一區域電容耦合而向該基板的該區域提供一脈衝DC電力；及一第二電極，設置在該基板支撐件內並且與該複數個第一電極電隔離，用於將該基板電夾持到該基板支撐件上。
  2. 如請求項1所述之基板支撐組件，其中該複數個第一電極的每個電極的至少一部分與該第二電極共面。
  3. 如請求項1所述之基板支撐組件，其中該複數個第一電極的一個或多個電極的至少一部分比該第二電極更靠近該基板支撐件的一基板支撐表面。
  4. 如請求項1所述之基板支撐組件，進一步包含一介電層，設置在該複數個第一電極和該基板支撐件的一基板支撐表面之間，其中該介電層具有在約5 μm和約300 μm之間的一厚度。
  5. 如請求項1所述之基板支撐組件，其中該第二電極包含一單一導電體，藉由在該單一導電體中形成的複數個開口與該複數個第一電極電隔離。
  6. 如請求項1所述之基板支撐組件，進一步包含一開關系統，包含： 複數個第一開關，該複數個第一開關的每個開關電耦合到該複數個第一電極的一個電極；及複數個第二開關，該複數個第二開關的每個開關電耦合到該複數個第一電極的一個電極。
  7. 如請求項6所述之基板支撐組件，其中該複數個第一開關的每個開關是一固態開關，該固態開關被配置為以高達約100 kHz的一頻率切換。
  8. 如請求項1所述之基板支撐組件，進一步包含一冷卻基座，熱耦合到該基板支撐件。
  9. 一種處理腔室，包含： 一個或多個側壁和底部，界定一處理容積；及一基板支撐件，包含：複數個第一電極，在該基板支撐件內，該複數個第一電極的每個電極與該複數個第一電極的每個其他電極電隔離且共面，其中該複數個第一電極的每個電極被配置為經由與一基板的一區域電容耦合而向該基板的該區域提供一脈衝DC偏壓；及一第二電極，設置在該基板支撐件內並與該複數個第一電極電隔離，用於將該基板電夾持到該基板支撐件。
  10. 如請求項9所述之處理腔室，進一步包含一開關系統，包含： 複數個第一開關，該複數個第一開關的每個開關被配置為提供一第一循環DC電壓，其中該複數個第一開關的每個開關電耦合到該複數個第一電極的一個電極；及複數個第二開關，該複數個第二開關的每個開關被配置為提供一第二循環DC電壓，其中該複數個第二開關的每個開關電耦合到該複數個第一電極的一個電極。
  11. 如請求項9所述之處理腔室，其中該複數個第一電極的每個電極的至少一部分與該第二電極共面。
  12. 如請求項9所述之處理腔室，其中該複數個第一電極的一個或多個電極的至少一部分比該第二電極更靠近該基板支撐件的一基板支撐表面。
  13. 如請求項9所述之處理腔室，其中設置在該複數個第一電極與該基板支撐件的一基板支撐表面之間的一介電材料層為在約5 μm與約300 μm之間厚。
  14. 如請求項9所述之處理腔室，其中該第二電極包含一單一導電材料部分，藉由在該單一導電材料部分中形成的複數個開口而與該複數個第一電極電隔離。
  15. 一種處理一基板的方法，包含以下步驟： 使一處理氣體流到該處理腔室中；從該處理氣體形成一電漿；使用設置在該基板支撐件中的一夾持電極而將一基板電夾持到設置在該處理腔室中的一基板支撐件，該基板支撐件包含一第一介電層和一第二介電層；及向設置在該基板支撐件中的複數個偏壓電極提供複數個循環DC電壓，其中每個相應的循環DC電壓經由與該基板的一區域電容耦合而向該基板的該區域提供一單獨的脈衝DC偏壓。
  16. 如請求項15所述之方法，其中該複數個循環DC電壓包含多於一個極性。
  17. 如請求項15所述之方法，其中該複數個循環DC電壓包含在約10 Hz與約100 kHz之間的多於一個頻率。
  18. 如請求項15所述之方法，其中該複數個循環DC電壓包含在約2％和98％之間的多於一個的佔空比。
  19. 如請求項15所述之方法，其中該夾持電極包含一單一導電材料部分，藉由在該單一導電材料部分中形成的複數個開口而與該複數個偏壓電極電隔離。
  20. 如請求項15所述之方法，其中該複數個偏壓電極的至少一部分與在該第一介電層和該第二介電層之間的該夾持電極共面，且其中該第一介電層為在約5 μm與約300 μm之間厚。
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