CN110998782B - 具有多个嵌入式电极的基板支撑件 - Google Patents

具有多个嵌入式电极的基板支撑件 Download PDF

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CN110998782B
CN110998782B CN201880053380.1A CN201880053380A CN110998782B CN 110998782 B CN110998782 B CN 110998782B CN 201880053380 A CN201880053380 A CN 201880053380A CN 110998782 B CN110998782 B CN 110998782B
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P·A·克劳斯
T·C·楚
赵在龙
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Abstract

提供了一种用于在等离子体辅助处理腔室中将基板偏压的区域的方法和设备。将基板(或基板的区域)偏压增加了在基板与处理腔室中形成的等离子体之间的电位差，从而将来自等离子体的离子加速朝向基板区域的活性表面。在本文中的多个偏压电极以有利于管理跨越基板的处理结果的均匀性的图案的方式跨越基板支撑件而空间地布置。

Description

具有多个嵌入式电极的基板支撑件
背景技术
技术领域
在本文中描述的实施例总体上涉及在半导体制造中使用的处理腔室，具体地，涉及具有被配置为偏压基板的基板支撑组件的处理腔室和偏压基板的方法。
对相关技术的描述
可靠地产生高深宽比特征是半导体器件的下一代超大规模集成0电路(VLSI)和极大规模集成电路(ULSI)的关键技术挑战之一。形成高深宽比特征的一种方法使用等离子体辅助蚀刻工艺以在基板的材料层(诸如介电层)中形成高深宽比开口。在典型的等离子体辅助蚀刻工艺中，在处理腔室中形成等离子体，并且来自等离子体的离子朝向基板和在基板上的掩模中形成的开口加速，以在掩模表面下方的材料层中形成开口。通常，通过将400kHz至2MHz的范围中的低频RF功率耦合到基板来将离子朝向基板加速，从而在基板上产生偏压电压。然而，将RF功率耦合到基板不会相对于等离子体向基板施加单电压。在常用配置中，在基板和等离子体之间的电位差以RF功率的频率从接近零值振荡到最大负值。缺少单电位(所述单电位将离子从等离子体加速到基板)导致在基板表面处和在基板的材料层中形成的开口(特征)中的大范围的离子能量。另外，由RF偏压产生的不同离子轨迹相对于基板表面而产生离子的大角度分布。当蚀刻高深宽比特征的开口时，大范围的离子能量是不期望的，因为离子没有以足够高的能量到达特征的底部以维持期望的蚀刻速率。相对于基板表面的离子的大角度分布是不期望的，因为其导致特征轮廓的变形，诸如在特征轮廓的垂直侧壁中的颈缩以及弯曲。
因此，本领域中存在有能够在等离子体辅助蚀刻工艺期间在基板的材料表面处提供具有低角度分布的窄范围的高能量离子的需求。
发明内容
本公开内容总体上涉及等离子体辅助处理腔室或者等离子体增强处理腔室。更具体地，在本文中的实施例涉及被配置为在等离子体辅助半导体制造工艺或等离子体增强半导体制造工艺期间向基板的区域提供单独的脉冲(循环)DC电压的静电吸盘(ESC)基板支撑件以及偏压基板的区域的方法。
在一个实施例中，提供了一种基板支撑组件，所述基板支撑组件包括基板支撑件，所述基板支撑件包括：多个第一电极，所述多个第一电极在基板支撑件内，所述多个第一电极中的每个电极与所述多个第一电极中的每个其他电极电隔离且共面，其中所述多个第一电极中的每个电极被配置为通过与基板的区域的电容耦合而向基板的区域提供脉冲DC功率；和第二电极，所述第二电极设置在基板支撑件内并且与所述多个第一电极电隔离，用于将基板电夹持至基板支撑件。
其他实施例提供了一种处理腔室，包括：一个或多个侧壁和底部，所述一个或多个侧壁和底部界定处理容积；和基板支撑件。所述基板支撑件包括：多个第一电极，所述多个第一电极在基板支撑件内，所述多个第一电极中的每个电极与所述多个第一电极中的每个其他电极电隔离且共面，其中所述多个第一电极中的每个电极被配置为通过与基板的区域电容耦合而向基板的区域提供脉冲DC偏压；和第二电极，所述第二电极设置在基板支撑件内并与所述多个第一电极电隔离，用于将基板电夹持到基板支撑件。
在另一个实施例中，提供了一种用多个循环DC电压偏压基板的方法。方法包括以下步骤：使处理气体流到处理腔室中；从处理气体形成等离子体；将基板电夹持到设置在处理腔室中的基板支撑件；和跨越多个区域偏压基板。跨越多个区域偏压基板包括以下步骤：将通过开关系统而提供给设置在基板支撑件中的多个偏压电极的多个循环DC电压通过基板支撑件的第一介电层的电容而耦合到基板的相应区域。在本文中的多个循环DC电压包括一系列的频率和/或多个极性。
附图简单说明
因此，以可详细地理解本公开文本的上述特征的方式，可通过参考实施例而获得对上面简要概述的本公开内容的更具体的描述，其中一些实施例示出在附图中。然而，应注意到，附图仅示出了本公开内容的典型实施例，且因此不应视为限制本公开内容的范围，因为本公开内容可以允许其他同等有效的实施例。
图1是根据一个实施例的处理腔室的示意性剖视图，其中静电吸盘(ESC)基板支撑组件设置在所述处理腔室中。
图2A是在图1的处理腔室中使用的基板支撑组件的特写剖视图。
图2B是图2A中所示的基板支撑组件的俯视图。
图3是示出根据在本文中描述的实施例的在等离子体辅助处理期间偏压基板的区域的方法的流程图。
具体实施方式
本公开内容的实施例总体上涉及等离子体处理腔室，诸如等离子体辅助处理腔室或等离子体增强处理腔室。更具体地，在本文中的实施例涉及静电吸盘(ESC)基板支撑件，所述静电吸盘(ESC)基板支撑件被配置为在等离子体辅助半导体制造处理或等离子体增强半导体制造处理期间向设置在所述静电吸盘(ESC)基板支撑件上的基板提供电容耦合的脉冲DC电压。将基板电容耦合到循环DC功率源(在基板上放置脉冲DC偏压)增加了在基板与处理腔室中形成的等离子体之间的电位差，从而将离子从等离子体加速朝向基板的活性表面。与RF偏压相反，脉冲DC偏压为离子从等离子体加速到基板提供单电位。在本文中的基板支撑件包括多个偏压电极，每个偏压电极独立地耦合到脉冲DC功率供应开关系统的部分，并且每个偏压电极配置成通过与基板的区域的电容耦合来提供基板的区域的可调谐偏压。在本文中的多个偏压电极以有利于管理跨越基板的处理结果的均匀性的图案的方式跨越基板支撑件而空间地布置。
图1是根据一个实施例的处理腔室100的示意性剖视图，处理腔室100具有设置于处理腔室100中的静电吸盘(ESC)基板支撑组件200。在此实施例中，处理腔室100是等离子体处理腔室，诸如等离子体蚀刻腔室、等离子体增强沉积腔室(例如等离子体增强化学气相沉积(PECVD)腔室或等离子体增强原子层沉积(PEALD)腔室)或基于等离子体的离子注入腔室(例如等离子体掺杂(PLAD)腔室)。
处理腔室100的特征在于界定处理容积120的腔室盖103、一个或多个侧壁102和腔室底部104。喷头112(具有设置成通过喷头112的多个开口118)设置在腔室盖103中，并用以将处理气体从气体入口114均匀地分配到处理容积120中。喷头112耦合到RF功率供应142(或在一些实施例中，VHF功率供应)，RF功率供应142通过与其的电容耦合而从处理气体形成等离子体135。处理容积120通过真空出口152流体耦合到真空，诸如流体耦合到一个或多个专用真空泵，真空出口152将处理容积120保持在低于大气压的条件下并从处理容积120排出处理气体和其他气体。设置在处理容积120中的基板支撑组件200设置在支撑轴124上，支撑轴124密封地延伸通过腔室底部104。支撑轴124耦合到控制器140，控制器140升高和降低支撑轴124和设置在支撑轴124上的基板支撑组件200，以促进基板115的处理和将基板115传送进出处理腔室100。通常，当基板支撑组件200处于升高位置或处理位置时，基板115与喷头112间隔开介于约0.75英寸和1.75英寸之间，诸如约1.25英寸。
基板115通过一个或多个侧壁102中的一个中的开口126装载到处理容积120中，开口126通常在基板115处理期间用门或阀(未示出)密封。设置在升降销箍134上方的多个升降销136可移动地设置通过基板支撑组件200，以促进传送基板115往返基板支撑组件200。升降销箍134耦合到升降箍轴131，升降箍轴131密封地延伸通过腔室底部104，升降箍轴131通过致动器130升高和降低升降销箍134。基板支撑组件200具有基板支撑件227，在基板支撑件227上设置基板用于处理。当升降销箍134处于升高位置时，多个升降销136在基板支撑件227的表面上方延伸，从而从基板支撑件227的表面升降基板115并能够通过机器人处理器(未示出)接近基板115。当升降销箍134处于降低位置时，多个升降销136与基板支撑件227的表面齐平或在基板支撑件227的表面下方，且基板115直接安置在基板支撑件227的表面上以进行处理。
在本文中的基板支撑组件200包括冷却基座125。基板支撑件227热耦合到冷却基座125并设置在冷却基座125上。基板支撑组件200的冷却基座125用以在处理期间调节基板支撑件227的温度，并由此调节设置在基板支撑表面203上的基板115的温度。在本文中，冷却基座125可以包括设置在冷却基座125中的一个或多个流体管道137，所述一个或多个流体管道137流体耦合到冷却剂源133(诸如制冷剂源或水源)并与冷却剂源133流体连通。通常，冷却基座125由耐腐蚀的导热材料形成，诸如耐腐蚀金属，例如铝、铝合金或不锈钢，并且用粘结剂或通过机械手段来热耦合到基板支撑件227。
在处理期间，基板115的离子轰击将加热基板115到可能不期望的高温，因为处理容积120的低压导致在基板115与基板支撑表面203之间的不良热传导。因此，在本文中的实施例中，在处理期间，在基板115和基板支撑表面203之间提供背侧气体，其中背侧气体将基板115热耦合到基板支撑表面203并增加其之间的热传递。通常，基板支撑表面203包括从基板支撑表面203延伸的多个突起228，当基板115设置在基板支撑表面203上时，所述多个突起228能够使背侧侧面气体在基板115和基板支撑表面203之间的空间流动或者占据在基板115和基板支撑表面203之间的空间。背侧气体通过一个或多个气体导管147而流到基板支撑表面203，所述一个或多个气体导管147通过基板支撑件227设置。在本文中，一个或多个气体导管147耦合到导热惰性背侧气体源146，诸如氦气源。
图2A是图1的处理腔室100中使用的基板支撑组件200的特写剖视图。图2B是图2A中所示的基板支撑组件200的俯视图。在本文中，基板支撑件227包括第一层227A和第二层227B，其中每个层227AB由包括金属氧化物或金属氮化物的介电材料、或包括金属氧化物或金属氮化物的混合物的介电材料(诸如Al2O3、AlN、Y2O3或其组合)形成。在一些实施例中，第一层227A由具有在约20V/μm与约200V/μm之间(诸如在约100V/μm与约200V/μm之间或在约20V/μm和约100V/μm之间)的击穿电压的介电材料形成。在一个实施例中，第一层227A由具有在约160μm下的击穿电压为9kV的99.5％的氧化铝形成。在一些实施例中，通过在将大块的介电材料研磨到期望的厚度D以形成第一层227A之前，将大块的介电材料接合到第二层227B和设置在第二层227B中或第二层227B上的多个电极，从而形成基板支撑件227。通常，第一层227A的厚度D在约5μm和约300μm之间，诸如在约100μm和约300μm之间，例如约160μm。在其他实施例中，使用任何合适的涂覆方法(诸如CVD、PECVD、ALD、PEALD、蒸发、溅射、等离子体弧涂覆、气溶胶涂覆或其组合)来形成第一层227A。
在本文中的设置和/或嵌入在基板支撑件中的多个电极包括多个偏压电极238A-C和单一ESC电极222。多个偏压电极中的每个电极与多个偏压电极中的每个其他电极电隔离，并与单一ESC电极222电隔离。于此的多个偏压电极238A-C的每个电极配置成通过与基板115的各个区域的电容耦合而向基板115的相应区域提供一个或多个独立的脉冲DC偏压。单一ESC电极222通过在基板115和基板支撑表面203之间提供电位而在基板115和基板支撑表面203之间提供夹持力。通常，ESC电极耦合到静态DC功率供应，在本文中，静态DC功率供应提供在约-5000V和约5000V之间，诸如在约100V和约4000V之间，诸如在约1000V和约3000V之间，例如约2000V。
在本文中的实施例中，基板支撑件227可被配置为支撑300mm直径的基板并可包括在2和20个之间的偏压电极，诸如所示的三个偏压电极238A-C，然而，用于处理更大基板和/或不同形状的基板的更大的基板支撑件可以包括任何数量的偏压电极。多个偏压电极238A-C各自由一个或多个导电材料部分(诸如金属网、箔、板或其组合)形成。在一些实施例中，多个偏压电极238A-C中的每一个由多于一个不连续导电材料部分(诸如多个金属网、箔、板或其组合)形成，所述多于一个不连续导电材料部分与设置在基板支撑件227中的一个或多个连接器电耦合(未示出)，使得电耦合的不连续材料部分包括单电极，诸如中心偏压电极238A、中间偏压电极238B或外部偏压电极238C。
多个偏压电极238A-C以有利于管理跨越基板115的处理结果的均匀性的图案的方式跨越基板支撑件227而空间地布置。在图2A所示的实施例中，中心偏压电极238A的圆形板和偏压电极238B-C的不连续环形区域界定多个同心区域。可使用其他空间布置，包括辐条图案、网格图案、线图案、螺旋图案、交叉图案、随机图案或其组合。在本文中，多个偏压电极238A-C中的每个电极与多个偏压电极中的每个其他电极和单一ESC电极222共面。单一ESC电极222与基板支撑件227平面地设置并平行于基板支撑表面203。多个偏压电极238A-C中的每个电极通过形成在单一ESC电极222中的开口和通过设置在其之间的基板支撑件227的介电材料而与单一ESC电极222电隔离。在其他实施例中，多个偏压电极208A-C的每个电极或多个偏压电极208A-C的每个电极的一部分与多个偏压电极的每个其他电极的至少一部分共面，且多个偏压电极208A-C比单一ESC电极222更接近基板支撑表面203。
在本文中，多个偏压电极238A-C中的每一个独立地电耦合到包括多个固态脉冲发生器/切换器的DC功率供应切换系统150的部分，在本文中，多个第一开关S1、S3、S5和多个第二开关S2、S4、S6能够将高压(HV)DC功率转换为具有在约10Hz(或更低)和约100kHZ之间的频率的循环DC电压。多个第一开关S1、S3、S5和多个第二开关S2、S4、S6进一步能够将高压(HV)DC功率转换为具有在2％至98％的范围中的占空比的循环DC电压。开关S1-S6以一定频率循环地操作或根据任何模式或无模式依需求而操作。多个偏压电极中的每一个电耦合到多个第一开关S1、S3、S5中的一个以及多个第二开关S2、S4、S6中的一个。
在本文中，多个第一开关S1、S3、S5电耦合到第一DC电压源156B，第一DC电压源156B可为(例如)正(+ve)电压源，并且多个第二开关S2、S4、S6电耦合到第二DC电压源156A，第二DC电压源156A可为例如负(-ve)电压源。在其他实施例中，两个电压源156A和156B可都是不同电压的正源或都是不同电压的负源。在本文中的第一DC电压源和第二DC电压源156B和156A在其对应的电压幅度中提供在约0V和约10kV之间的DC偏压(正的或负的)。
每组开关(诸如S1和S2、S3和S4或S5和S6)独立地操作，从而向基板支撑件227的各个偏压电极238A-C提供正极性或负极性的循环DC电压的单独的频率、图案或操作，并通过与其的相应区域的电容耦合，来向设置在基板支撑件227上的基板115的相应区域提供单独的脉冲DC偏压。通常，将负DC脉冲耦合到基板区域将增加在基板区域和等离子体135之间的电位差，其中基板区域在脉冲期间处于比等离子体更负的电位。在这种负DC偏压的情况下，等离子体中的带正电荷的物质将朝向基板区域的表面加速，从而实现基板区域的处理。将正DC脉冲耦合到基板区域将增加在基板区域和等离子体135之间的电位差，其中基板区域在脉冲期间处于比等离子体更正的电位。在这种正DC偏压的情况下，等离子体中的带负电荷的物质将朝向基板区域的表面加速，从而实现基板区域的处理。对于提供给不同基板区域的正和负DC偏压条件而言，调整循环DC电压的频率、占空比和/或持续时间的能力允许调谐跨越基板处理均匀性以及跨越基板处理的改进。在其他有用的属性中，施加正和负DC偏压脉冲的能力提供了基板区域的电荷中和，其中可使基板区域的表面周期性地进入中性电荷状态。
图3是示出根据在本文中描述的实施例的在等离子体辅助处理期间偏压基板的区域的方法300的流程图。在310处，方法300包括使处理气体流到处理腔室中，并且在320处，方法包括从处理气体形成等离子体。
在330处，方法包括300使用设置在基板支撑件中的夹持电极将基板电夹持到设置在处理腔室中的基板支撑件，基板支撑件包括第一介电层和第二介电层。
在340处，方法300包括向设置在基板支撑件中的多个偏压电极提供多个循环DC电压，其中每个相应的循环DC电压通过与基板的区域的电容耦合向基板的区域提供单独的脉冲DC偏压。在一些实施例中，多个循环DC电压包括多于一个极性、多于一个频率、多于一个占空比和/或多于一个持续时间。脉冲DC偏压使得在330处形成的等离子体中的离子朝向基板加速，以对基板执行材料工艺(诸如沉积或移除)。应当注意等离子体也可在320之后、330之后、340之后或350之后形成。
在本文中所述的基板支撑组件和方法在与使用静电夹持力兼容的等离子体辅助处理期间实现了电容耦合脉冲DC偏压基板。脉冲DC偏压允许增加对基板表面和/或基板表面的区域处和基板表面中形成的特征开口中的离子能量和角度分布的控制。这种增加的控制至少在形成高深宽比特征和/或需要方形的蚀刻轮廓的特征时是期望的，诸如在用于浅沟槽隔离(STI)应用的硅蚀刻、或在FinFET技术中使用的硅鳍片。将不同频率、占空比、极性和/或持续时间的DC脉冲施加到基板的不同区域的能力实现了调谐跨越基板的处理均匀性和跨越基板处理的改进。
虽然前述内容针对的是本公开内容的实施例，但是可在不背离本公开内容的基本范围的情况下设计本公开内容的其他和进一步的实施例，且本公开内容的范围由以下的权利要求确定。

Claims (13)

1.一种基板支撑组件，包括：
多个第一电极，所述多个第一电极在基板支撑件内，所述多个第一电极中的每个电极与所述多个第一电极中的每个其他电极电隔离且共面，其中所述多个第一电极中的每个电极被配置为通过与基板的区域的电容耦合来向所述基板的所述区域提供脉冲DC功率；
第二电极，所述第二电极设置在所述基板支撑件内，并且与所述多个第一电极电隔离，用于将所述基板电夹持到所述基板支撑件；以及
开关系统，所述开关系统包括：
多个第一开关，所述多个第一开关中的每个开关电耦合到所述多个第一电极中的一个电极；以及
多个第二开关，所述多个第二开关中的每个开关电耦合到所述多个第一电极中的一个电极。
2.如权利要求1所述的基板支撑组件，其中所述多个第一电极中的每个电极的至少一部分与所述第二电极共面。
3.如权利要求1所述的基板支撑组件，其中所述多个第一电极中的一个或多个电极的至少一部分比所述第二电极更靠近所述基板支撑件的基板支撑表面。
4.如权利要求1所述的基板支撑组件，其中所述第二电极包括单一导体。
5.如权利要求1所述的基板支撑组件，其中所述多个第一开关中的每个开关是固态开关，所述固态开关被配置为以高达100kHz的频率切换。
6.一种处理腔室，包括：
一个或多个侧壁和底部，所述一个或多个侧壁和所述底部界定处理容积；
基板支撑件，所述基板支撑件包括：
多个第一电极，所述多个第一电极在所述基板支撑件内，所述多个第一电极中的每个电极与所述多个第一电极中的每个其他电极电隔离且共面，其中所述多个第一电极中的每个电极被配置为通过与基板的区域的电容耦合而向所述基板的所述区域提供脉冲DC偏压；以及
第二电极，所述第二电极设置在所述基板支撑件内，并与所述多个第一电极电隔离，用于将所述基板电夹持到所述基板支撑件；以及
开关系统，所述开关系统包括：
多个第一开关，所述多个第一开关中的每个开关被配置为提供第一循环DC电压，其中所述多个第一开关中的每个开关电耦合到所述多个第一电极中的一个电极；以及
多个第二开关，所述多个第二开关中的每个开关被配置为提供第二循环DC电压，其中所述多个第二开关中的每个开关电耦合到所述多个第一电极中的一个电极。
7.如权利要求6所述的处理腔室，其中所述多个第一电极中的每个电极的至少一部分与所述第二电极共面。
8.如权利要求6所述的处理腔室，其中所述多个第一电极中的一个或多个电极的至少一部分比所述第二电极更靠近所述基板支撑件的基板支撑表面。
9.如权利要求6所述的处理腔室，其中所述第二电极包括单一导电材料部分。
10.一种处理基板的方法，包括：
使处理气体流到处理腔室中；
从所述处理气体形成等离子体；
使用设置在基板支撑件中的夹持电极而将基板电夹持到设置在所述处理腔室的所述基板支撑件，所述基板支撑件包括第一介电层和第二介电层；以及
通过开关系统向设置在所述基板支撑件中的多个偏压电极提供多个循环DC电压，其中每个相应的循环DC电压通过与所述基板的区域的电容耦合而向所述基板的所述区域提供单独的脉冲DC偏压，且其中所述开关系统包括：多个第一开关，所述多个第一开关中的每个开关电耦合到所述多个第一电极中的一个电极；以及多个第二开关，所述多个第二开关中的每个开关电耦合到所述多个第一电极中的一个电极。
11.如权利要求10所述的方法，其中所述多个循环DC电压包括多于一个极性。
12.如权利要求10所述的方法，其中所述多个循环DC电压包括在10Hz与100kHz之间的多于一个频率。
13.如权利要求10所述的方法，其中所述夹持电极包括单一导电材料部分。
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