TW201828478A - 半導體裝置及其製造方法 - Google Patents

半導體裝置及其製造方法 Download PDF

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Publication number
TW201828478A
TW201828478A TW106139639A TW106139639A TW201828478A TW 201828478 A TW201828478 A TW 201828478A TW 106139639 A TW106139639 A TW 106139639A TW 106139639 A TW106139639 A TW 106139639A TW 201828478 A TW201828478 A TW 201828478A
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Taiwan
Prior art keywords
trench
substrate
insulating film
region
height
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TW106139639A
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English (en)
Chinese (zh)
Inventor
大須賀祐喜
原田博文
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日商艾普凌科有限公司
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Publication of TW201828478A publication Critical patent/TW201828478A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0295—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the source electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H10D64/2527—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices for vertical devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/047—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein
    • H10W20/051—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein by ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/152—Source regions of DMOS transistors
    • H10D62/154—Dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • H10P30/221—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks characterised by the angle between the ion beam and the mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
TW106139639A 2017-01-19 2017-11-16 半導體裝置及其製造方法 TW201828478A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017007552A JP2018117070A (ja) 2017-01-19 2017-01-19 半導体装置及びその製造方法
JP2017-007552 2017-01-19

Publications (1)

Publication Number Publication Date
TW201828478A true TW201828478A (zh) 2018-08-01

Family

ID=62841087

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106139639A TW201828478A (zh) 2017-01-19 2017-11-16 半導體裝置及其製造方法

Country Status (5)

Country Link
US (2) US10276672B2 (https=)
JP (1) JP2018117070A (https=)
KR (1) KR20180085674A (https=)
CN (1) CN108336141B (https=)
TW (1) TW201828478A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10770396B2 (en) 2018-12-28 2020-09-08 Vanguard International Semiconductor Corporation Semiconductor structure and method for fabricating the same
TWI713092B (zh) * 2018-10-23 2020-12-11 世界先進積體電路股份有限公司 半導體結構及其製造方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7119449B2 (ja) * 2018-03-16 2022-08-17 富士電機株式会社 半導体装置および半導体装置の製造方法
JP2019175930A (ja) * 2018-03-27 2019-10-10 エイブリック株式会社 半導体装置及びその製造方法
EP3690952A1 (en) * 2019-01-29 2020-08-05 Nexperia B.V. Trench gate semiconductor device and method of manufacture
JP7417498B2 (ja) * 2020-09-14 2024-01-18 株式会社東芝 半導体装置及びその製造方法
CN118398664A (zh) * 2024-04-23 2024-07-26 福建省晋华集成电路有限公司 半导体结构及其制备方法

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5118270A (ja) 1974-08-07 1976-02-13 Nishimura Plastics Packaging Haikigasujugaiseibunjokyakusochi
JPS58171861A (ja) * 1982-04-01 1983-10-08 Toshiba Corp 半導体装置
US6351009B1 (en) 1999-03-01 2002-02-26 Fairchild Semiconductor Corporation MOS-gated device having a buried gate and process for forming same
US6781194B2 (en) * 2001-04-11 2004-08-24 Silicon Semiconductor Corporation Vertical power devices having retrograded-doped transition regions and insulated trench-based electrodes therein
JP4852792B2 (ja) * 2001-03-30 2012-01-11 株式会社デンソー 半導体装置の製造方法
JP4225711B2 (ja) * 2001-06-29 2009-02-18 株式会社東芝 半導体素子及びその製造方法
JP3908040B2 (ja) * 2002-01-17 2007-04-25 沖電気工業株式会社 高耐圧縦型ｍｏｓトランジスタの製造方法
US7091573B2 (en) * 2002-03-19 2006-08-15 Infineon Technologies Ag Power transistor
AU2003207902A1 (en) * 2002-04-11 2003-10-20 Koninklijke Philips Electronics N.V. Low-pressure mercury vapor discharge lamp
JP3677489B2 (ja) * 2002-05-29 2005-08-03 Ｎｅｃエレクトロニクス株式会社 縦型電界効果トランジスタ
JP5008247B2 (ja) * 2003-04-03 2012-08-22 セイコーインスツル株式会社 縦形ｍｏｓトランジスタの製造方法
DE10318625B4 (de) * 2003-04-24 2006-08-03 Infineon Technologies Ag Vertikale Speicherzelle und Verfahren zu deren Herstellung
JP2005011649A (ja) 2003-06-18 2005-01-13 Sanyo Electric Co Ltd 接着方法、その接着方法を利用可能なエレクトロルミネッセンスパネルの製造方法、及びエレクトロルミネッセンスパネル
JP2005116649A (ja) * 2003-10-06 2005-04-28 Matsushita Electric Ind Co Ltd 縦型ゲート半導体装置およびその製造方法
US8247296B2 (en) * 2009-12-09 2012-08-21 Semiconductor Components Industries, Llc Method of forming an insulated gate field effect transistor device having a shield electrode structure
WO2011108191A1 (ja) * 2010-03-05 2011-09-09 パナソニック株式会社 半導体装置の製造方法および半導体装置
JP5616720B2 (ja) * 2010-08-30 2014-10-29 セイコーインスツル株式会社 半導体装置およびその製造方法
JP5674530B2 (ja) * 2010-09-10 2015-02-25 ルネサスエレクトロニクス株式会社 半導体装置の制御装置
JP2012174989A (ja) * 2011-02-23 2012-09-10 Toshiba Corp 半導体装置の製造方法
CN102760662B (zh) * 2011-04-29 2014-12-31 茂达电子股份有限公司 半导体功率装置的制作方法
JP6065303B2 (ja) * 2012-06-15 2017-01-25 ローム株式会社 スイッチングデバイス
JP5831526B2 (ja) * 2013-01-17 2015-12-09 株式会社デンソー 半導体装置およびその製造方法
DE102014109926A1 (de) * 2014-07-15 2016-01-21 Infineon Technologies Austria Ag Halbleitervorrichtung mit einer Vielzahl von Transistorzellen und Herstellungsverfahren
US9716168B2 (en) * 2014-09-24 2017-07-25 Shindengen Electric Manufacturing Co., Ltd. Silicon carbide semiconductor device, method of manufacturing silicon carbide semiconductor device and method of designing silicon carbide semiconductor device
US20160268446A1 (en) * 2015-03-10 2016-09-15 United Silicon Carbide, Inc. Trench vertical jfet with improved threshold voltage control
US9818827B2 (en) * 2015-04-08 2017-11-14 Infineon Technologies Austria Ag Field plate trench semiconductor device with planar gate
US10418452B2 (en) * 2015-12-10 2019-09-17 Infineon Technologies Austria Ag Semiconductor device with different gate trenches
US10141415B2 (en) * 2016-01-12 2018-11-27 Infineon Technologies Americas Corp. Combined gate and source trench formation and related structure
JP6660611B2 (ja) * 2016-01-15 2020-03-11 ローム株式会社 半導体装置および半導体装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI713092B (zh) * 2018-10-23 2020-12-11 世界先進積體電路股份有限公司 半導體結構及其製造方法
US10770396B2 (en) 2018-12-28 2020-09-08 Vanguard International Semiconductor Corporation Semiconductor structure and method for fabricating the same

Also Published As

Publication number Publication date
JP2018117070A (ja) 2018-07-26
US10593769B2 (en) 2020-03-17
KR20180085674A (ko) 2018-07-27
CN108336141A (zh) 2018-07-27
US10276672B2 (en) 2019-04-30
US20190214470A1 (en) 2019-07-11
US20180204918A1 (en) 2018-07-19
CN108336141B (zh) 2022-06-24

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