TW201804608A - 微發光二極體陣列顯示裝置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 claims description 63
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- 230000000295 complement effect Effects 0.000 claims description 20
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- 229910044991 metal oxide Inorganic materials 0.000 claims description 14
- 150000004706 metal oxides Chemical class 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000003086 colorant Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
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Abstract
本發明揭示微發光二極體陣列顯示裝置。該等微發光二極體顯示裝置中之一者包括:微發光二極體面板,其包括複數個微發光二極體畫素;CMOS背板,其包括複數個CMOS胞元,該複數個CMOS胞元對應於微發光二極體畫素以個別地驅動微發光二極體畫素;以及凸塊,其在其中該等微發光二極體畫素佈置成面向該等CMOS胞元的狀態中將該等微發光二極體畫素電連接至該等對應CMOS胞元。該等微發光二極體畫素經由該等凸塊倒裝晶片接合至形成於該CMOS背板上的該等對應CMOS胞元,以便該等微發光二極體畫素個別地受控。
Description
本發明係關於一種微發光二極體(Light Emitting Diode;LED)陣列顯示裝置,且更確切而言係關於此類微發光二極體陣列顯示裝置,其中複數個微發光二極體畫素藉由蝕刻排列在一個微發光二極體面板上以用於發光二極體晶片之生產,且畫素陣列微發光二極體面板經由凸塊倒裝晶片接合至互補式金屬氧化物半導體(Complementary Metal Oxide Semiconductor;CMOS)背板,以便微發光二極體畫素可個別地受驅動,由此適於微顯示器應用。
對發光二極體(LED)之需求就低電耗及環境友好方面而言已呈指數擴展。發光二極體被用作用於照明設備及液晶顯示器(Liquid Crystal Display;LCD)裝置之背光模組(backlights),且廣泛應用於顯示裝置。
發光二極體為將電能轉化為光之各種固態元件。發光二極體係基於以下原理:當電壓施加於其間插入有源層的兩個摻雜層、亦即n型半導體層與p型半導體層之間時,
電子及電洞(hole)注入有源層並在該有源層中再結合以發射光。發光二極體可在相對低的電壓下受驅動並具有高能量效率。歸咎於此等優點,發光二極體釋放少量熱量。發光二極體可以各種類型生產。特別而言,微發光二極體陣列顯示裝置係基於其中複數個微發光二極體畫素形成於一個晶圓之上的發光二極體之類型所製造。根據用於其中複數個微發光二極體畫素形成於一個晶圓之上的微發光二極體陣列顯示裝置之製造的習知方法,p型端子及n型端子經由晶片生產製程形成於每一畫素中,且沿訊號線之縱向軸及橫向軸排列,以驅動畫素。在此情況下,負責用於微發光二極體畫素中之訊號控制的元件應設置在微發光二極體畫素附近,從而導致微發光二極體陣列顯示裝置之大小的增大。此外,沿縱向軸及橫向軸排列之資料線應藉由打線接合連接至微發光二極體畫素,從而使製程變得複雜且不方便。
複數個微發光二極體畫素在一個基板上之形成在技術上限制發射紅、綠及藍光之結構的生產。由於此技術性困難,將發光二極體作為微發光二極體陣列顯示裝置中的光源之使用不可避免地導致單色光之發射。因此,此項技術中需要一種可提供針對先前技術之問題的解決方案之方法。
本發明之一個目標係提供一種微發光二極體陣列顯示裝置,其中微發光二極體畫素經由凸塊倒裝晶片接合至形成於CMOS背板上的對應CMOS胞元,由此避免用於將微發光二極體畫素連接至各種資料線的打線接合之複雜性及不便性,同時賦能於對微發光二極體畫素之個別控制。
本發明之另一目標係提供一種微發光二極體陣列顯示裝置,其中各自包括複數個微發光二極體畫素之微發光二極體面板倒裝晶片接合至單個CMOS背板,由此克服先前技術中的在形成包括形成於一個基板上之微發光二極體畫素的紅、綠及藍光發射結構方面之困難。
根據本發明之一個態樣,提供一種微發光二極體陣列顯示裝置,其包括:微發光二極體面板,其包括複數個微發光二極體畫素;CMOS背板,其包括複數個CMOS胞元,該複數個CMOS胞元對應於微發光二極體畫素以個別地驅動微發光二極體畫素;以及凸塊,其在其中微發光二極體畫素佈置成面向CMOS胞元的狀態中將微發光二極體畫素電連接至對應CMOS胞元,其中微發光二極體畫素經由凸塊倒裝晶片接合至形成於CMOS背板上的對應CMOS胞元,以便微發光二極體畫素個別地受控。
根據一個實施例,微發光二極體畫素係藉由在基板上
依序地生長第一傳導性型半導體層、有源層及第二傳導性型半導體層並蝕刻該等層而形成,微發光二極體畫素具有垂直結構,包括依序地形成之第一傳導性型半導體層、有源層及第二傳導性型半導體層,且有源層及第二傳導性型半導體層自第一傳導性型半導體層之其中無任何微發光二極體畫素形成的暴露部分移除。
根據一個實施例,第一傳導性型金屬層形成於第一傳導性型半導體層之其中無任何微發光二極體畫素形成的部分之上,且與微發光二極體畫素間隔開。
根據一個實施例,第一傳導性型金屬層在第一傳導性型半導體層上沿微發光二極體面板之周邊形成。
根據一個實施例,第一傳導性型金屬層具有與微發光二極體畫素相同的高度。
根據一個實施例,第一傳導性型金屬層作為微發光二極體畫素之公共電極行使功能。
根據一個實施例,CMOS背板包括在對應於第一傳導性型金屬層之位置處形成的公共胞元,且第一傳導性型金屬層經由公共凸塊電連接至公共胞元。
根據一個實施例,第一傳導性型為n型,且第二傳導性型為p型。
根據一個實施例,基板由選自藍寶石、SiC、Si、玻璃及ZnO之材料製成。
根據一個實施例,凸塊形成於CMOS胞元上,且藉由加熱被熔融,以使得CMOS胞元電連接至對應微發光二極體畫素。
根據本發明之另一態樣,提供一種微發光二極體陣列顯示裝置,其包括:第一微發光二極體面板、第二微發光二極體面板及第三微發光二極體面板,其發射具有不同波長帶的光,該等微發光二極體面板中之每一者包括複數個微發光二極體畫素;單個CMOS背板,其包括複數個CMOS胞元,該複數個CMOS胞元對應於第一微發光二極體面板、第二微發光二極體面板及第三微發光二極體面板之微發光二極體畫素以個別地驅動微發光二極體畫素;以及凸塊,其在其中第一微發光二極體面板、第二微發光二極體面板及第三微發光二極體面板之微發光二極體畫素佈置成面向CMOS胞元的狀態中將第一微發光二極體面板、第二微發光二極體面板及第三微發光二極體面板之微發光二極體畫素電連接至對應CMOS胞元,其中第一微發光二極體面板、第二微發光二極體面板及第三微發
光二極體面板之微發光二極體畫素經由凸塊倒裝晶片接合至形成於CMOS背板上的對應CMOS胞元,以便微發光二極體畫素個別地受控。
在根據本發明之微發光二極體陣列顯示裝置的新概念中,微發光二極體畫素經由凸塊倒裝晶片接合至形成於CMOS背板上的微發光二極體畫素,由此避免用於將微發光二極體畫素連接至各種資料線的打線接合之複雜性及不便性,同時賦能於對微發光二極體畫素之個別控制。本發明之其中發射紅、綠及藍光之複數個微發光二極體面板經由凸塊倒裝晶片接合至單個CMOS背板的微發光二極體陣列顯示裝置可利用光學系統將三色聚焦在同一區域上來達成全色。因此,本發明之微發光二極體陣列顯示裝置有效用於克服先前技術中的在一個基板上形成包括複數個微發光二極體畫素之紅、綠及藍光發射結構方面之技術困難。
100、1100、1200、1300‧‧‧微發光二極體面板
110‧‧‧基板
120、132‧‧‧第一傳導性型半導體層
130‧‧‧微發光二極體畫素
134‧‧‧有源層
136‧‧‧第二傳導性型半導體層
140‧‧‧第一傳導性型金屬層
200、2000‧‧‧CMOS背板
230‧‧‧CMOS胞元
240‧‧‧公共胞元
340‧‧‧公共凸塊
300、330、3000、3100、3200、3300‧‧‧凸塊
2100、2200、2300‧‧‧CMOS胞元區域
700‧‧‧驅動IC
結合隨附圖式,根據實施例之以下描述,本發明之此等及/或其他態樣及優點將變得明顯且更容易理解,在該等隨附圖式中。
圖1例示根據本發明之一個實施例的微發光二極體陣列顯示裝置之示範性微發光二極體面板100。
圖2例示圖1之包括微發光二極體畫素的微發光二極體面板100及包括複數個CMOS胞元之CMOS背板200,該複數個CMOS胞元適於個別地驅動微發光二極體面板100之微發光二極體畫素。
圖3例示其中微發光二極體面板100及圖2所例示之CMOS背板200經由佈置在CMOS背板200上的凸塊300電連接至彼此之狀態。
圖4例示其中微發光二極體面板100及圖3所例示之CMOS背板200經由凸塊300面向彼此佈置以便將微發光二極體面板100之微發光二極體畫素電連接至CMOS背板200之CMOS胞元的狀態。
圖5例示用來在根據本發明之一個實施例的微發光二極體陣列顯示裝置中達成全色之狀態,其中包括:紅微發光二極體面板1100、綠微發光二極體面板1200及藍微發光二極體面板1300;單個CMOS背板2000,其具有CMOS胞元區域2100、2200及2300,其中微發光二極體面板1100、1200及1300用來電連接至CMOS胞元;以及凸塊3000,其佈置在CMOS胞元上。
圖6例示其中紅微發光二極體面板1100、綠微發光二極體面板1200及藍微發光二極體面板1300經由圖5
之微發光二極體陣列顯示裝置中的凸塊3000電連接至單個CMOS背板2000之狀態。
圖7為用於簡要說明為達成全色而對圖5所例示之微發光二極體陣列顯示裝置之驅動的視圖。
本發明係關於一種微發光二極體陣列顯示裝置,其中微發光二極體畫素藉由台面蝕刻(MESA etching)排列且倒裝晶片接合至CMOS背板,由此適用於微顯示器,諸如頭部安裝顯示器(head mounted display;HMD)或抬頭顯示器(head up display;HUD)。在本發明之微發光二極體陣列顯示裝置中,藉由台面蝕刻排列以用於發光二極體晶片之生產的微發光二極體畫素倒裝晶片接合至CMOS背板,以便該等微發光二極體畫素可個別地受驅動。本發明亦關於此種微發光二極體陣列顯示裝置,其中三個紅、綠及藍光發射元件,亦即微發光二極體面板,經排列在CMOS背板上以達成全色。
現將參考隨附圖式描述本發明之較佳實施例。圖式及參考圖式所描述之實施例經簡化及例示以使得熟習此項技術者可容易地理解本發明。因此,圖式及實施例不應被看作限制本發明之範疇。
圖1例示根據本發明之一個實施例的微發光二極體陣列顯示裝置之示範性微發光二極體面板100,圖2例示包括微發光二極體畫素之微發光二極體面板100及包括複數個CMOS胞元之CMOS背板200,該複數個CMOS胞元適於個別地驅動微發光二極體面板100之微發光二極體畫素,圖3例示其中微發光二極體面板100及CMOS背板200經由佈置在CMOS背板200上的凸塊300電連接至彼此之狀態,及圖4例示其中微發光二極體面板100及CMOS背板200經由凸塊300面向彼此佈置以便將微發光二極體面板100之微發光二極體畫素電連接至CMOS背板200之CMOS胞元的狀態。
首先參考圖1至圖4,將給出根據本發明之一個實施例的微發光二極體陣列顯示裝置之描述。微發光二極體陣列顯示裝置包括微發光二極體面板100、CMOS背板200及凸塊300。微發光二極體面板100包括複數個微發光二極體畫素130。CMOS背板200包括複數個CMOS胞元230,該複數個CMOS胞元230對應於微發光二極體畫素130以個別地驅動微發光二極體畫素130。微發光二極體畫素130在其中微發光二極體畫素130佈置成面向CMOS胞元230的狀態中經由凸塊300電連接至對應CMOS胞元230。在圖1至圖4中,為方便之目的,微發光二極體畫素中之僅一者及CMOS胞元中之僅一者分別由元件符號130及230表示。微發光二極體畫素130經由凸塊300
倒裝晶片接合至形成於CMOS背板200上的對應CMOS胞元230。歸咎於此構造,微發光二極體畫素130可個別地受控。
微發光二極體面板100之微發光二極體畫素130係藉由在基板110上依序地生長第一傳導性型半導體層132、有源層134及第二傳導性型半導體層136並蝕刻該等層而形成。微發光二極體畫素具有垂直結構,包括依序地形成於基板110上之第一傳導性型半導體層132、有源層134及第二傳導性型半導體層136。基板110可由選自藍寶石、SiC、Si、玻璃及ZnO之材料製成。第一傳導性型半導體層132可為n型半導體層,且第二傳導性型半導體層136可為p型半導體層。有源層134為其中來自第一傳導性型半導體層132之電子在電力被施加時與來自第二傳導性型半導體層136之電洞再結合之區域。
第二傳導性型半導體層136及有源層134自微發光二極體面板100之其中無任何微發光二極體畫素130形成之蝕刻部分120移除,且因此,第一傳導性型半導體層在蝕刻部分中暴露。微發光二極體面板100包括第一傳導性型金屬層140,第一傳導性型金屬層140形成於第一傳導性型半導體層132之其中無任何微發光二極體畫素130形成的部分120之上。第一傳導性型金屬層140與微發光二極體畫素130間隔開。第一傳導性型金屬層140在第一傳導
性型半導體層132上沿微發光二極體面板100之周邊以一預定寬度形成。第一傳導性型金屬層140具有與微發光二極體畫素130實質上相同的高度。第一傳導性型金屬層140經由凸塊300電連接至CMOS背板200。因此,第一傳導性型金屬層140作為微發光二極體畫素130之公共電極行使功能。例如,第一傳導性型金屬層140可為公共接地。
CMOS背板200之複數個CMOS胞元230用來個別地驅動微發光二極體畫素130。CMOS胞元230經由凸塊330電連接至對應微發光二極體畫素。CMOS胞元230為用於個別地驅動對應微發光二極體畫素之積體電路。CMOS背板200可為例如主動矩陣(active matrix;AM)面板。具體而言,CMOS胞元230中之每一者可為包括兩個電晶體及一個電容器的畫素驅動電路。當微發光二極體面板100經由凸塊300倒裝晶片接合至CMOS背板200時,微發光二極體畫素中之每一者可佈置在畫素驅動電路之電晶體的汲極端子與公共接地端子(例如元件符號240)之間以形成等效電路。
CMOS背板200包括形成在對應於第一傳導性型金屬層140之位置處的公共胞元240。第一傳導性型金屬層140經由公共凸塊340電連接至公共胞元240。在此,凸塊300通常旨在包括將複數個CMOS胞元電連接至微發光二極
體畫素的凸塊330及將第一傳導性型金屬層140電連接至公共胞元240的公共凸塊340。
如圖3所例示的,其上佈置有CMOS胞元230之CMOS背板200面向微發光二極體面板100。在CMOS胞元230以一對一關系接觸微發光二極體畫素130之後,凸塊330及公共凸塊340藉由加熱被熔融。因此,CMOS胞元230電連接至對應微發光二極體畫素130,如圖4所例示。
接下來參考圖5及圖6,將給出根據本發明之另一實施例的能夠達成全色之微發光二極體陣列顯示裝置之描述。圖5例示用來在根據本發明之一個實施例的微發光二極體陣列顯示裝置中達成全色之狀態,其中包括:紅微發光二極體面板1100、綠微發光二極體面板1200及藍微發光二極體面板1300;單個CMOS背板2000,其具有CMOS胞元區域2100、2200及2300,其中微發光二極體面板1100、1200及1300用來電連接至CMOS胞元;以及凸塊3000,其佈置在CMOS胞元上,且圖6例示其中紅微發光二極體面板1100、綠微發光二極體面板1200及藍微發光二極體面板1300經由凸塊3000電連接至單個CMOS背板2000之狀態。
參考此等圖,能夠達成全色之微發光二極體陣列顯示
裝置包括第一微發光二極體面板1100、第二微發光二極體面板1200及第三微發光二極體面板1300,該等微發光二極體面板中之每一者包括複數個經排列的微發光二極體畫素。第一微發光二極體面板1100、第二微發光二極體面板1200及第三微發光二極體面板1300發射具有不同波長帶的光。例如,第一微發光二極體面板1100、第二微發光二極體面板1200及第三微發光二極體面板1300可經構造來分別發射紅光、綠光及藍光。能夠達成全色之微發光二極體陣列顯示裝置包括單個CMOS背板2000,該單個CMOS背板2000適於個別地驅動第一微發光二極體面板1100、第二微發光二極體面板1200及第三微發光二極體面板1300之微發光二極體畫素。單個CMOS背板2000包括複數個CMOS胞元,該複數個CMOS胞元對應於第一微發光二極體面板1100、第二微發光二極體面板1200及第三微發光二極體面板1300之微發光二極體畫素。CMOS胞元區域2100、2200及2300形成於CMOS背板2000中,以使得微發光二極體面板1100、1200及1300佈置在CMOS背板2000上。CMOS胞元區域2100、2200及2300分別對應於微發光二極體面板1100、1200及1300形成。微發光二極體面板1100、1200及1300分別倒裝晶片接合至CMOS胞元區域2100、2200及2300。對應於微發光二極體面板1100、1200及1300之微發光二極體畫素的複數個CMOS胞元分別形成於CMOS胞元區域2100、2200及2300中。在此佈置的情況下,微發光二極體面板
1100、1200及1300倒裝晶片接合至單個CMOS背板2000,以將微發光二極體畫素電連接至CMOS胞元。CMOS胞元經由凸塊3000電連接至微發光二極體畫素。微發光二極體面板1100、1200及1300至單個CMOS背板2000之倒裝晶片接合以與參考圖1至圖4所說明的微發光二極體面板100至CMOS背板200之倒裝晶片接合相同的方式進行。
公共胞元在單個CMOS背板2000上形成於CMOS胞元區域2100、2200及2300中,且經由公共凸塊電連接至微發光二極體面板1100、1200及1300之第一傳導性型金屬層。
如前所述,本發明之其中發射具有不同波長帶的光、亦即紅、綠及藍光之複數個獨立製造的微發光二極體面板倒裝晶片接合至單個CMOS背板2000之微發光二極體陣列顯示裝置可利用光學系統將三色聚焦在同一區域上,以達成全色,由此克服微發光二極體之製造中的先前技術之在一個基板上形成紅、綠及藍光發射結構方面的技術困難。此外,本發明之微發光二極體陣列顯示裝置可避免用於將發光二極體晶片連接至各種資料線的打線接合之不便或困難,其中該等資料線沿縱向軸及橫向軸延伸且負責用於對發光二極體晶片之控制。此外,本發明之微發光二極體陣列顯示裝置可消除對在遠離發光二極體晶片之位置
處設置負責用於發光二極體晶片中之訊號控制的元件之需求,從而有助於減小顯示裝置之總大小。
最終,圖7為用於簡要說明為達成全色而對圖5所例示之微發光二極體陣列顯示裝置之驅動的視圖。如圖7所例示的,微發光二極體陣列顯示裝置響應於來自驅動IC(integrated circuit;積體電路)700之控制訊號受驅動。來自驅動IC 700之控制訊號藉由形成於CMOS背板2000中之CMOS胞元(亦即CMOS積體電路)經傳輸至微發光二極體畫素。來自驅動IC 700之控制訊號可為類比訊號或數位訊號。數位訊號可亦為脈衝寬度調變(pulse width modulation;PWM)訊號。
100‧‧‧微發光二極體面板
130‧‧‧微發光二極體畫素
140‧‧‧第一傳導性型金屬層
200‧‧‧CMOS背板
230‧‧‧CMOS胞元
240‧‧‧公共胞元
340‧‧‧公共凸塊
300、330‧‧‧凸塊
Claims (20)
- 一種微發光二極體陣列顯示裝置,包含:微發光二極體面板,其包含複數個微發光二極體畫素;互補式金屬氧化物半導體背板,其包含對應於前述微發光二極體畫素之複數個互補式金屬氧化物半導體胞元;以及凸塊,其在其中前述微發光二極體畫素佈置成面向前述互補式金屬氧化物半導體胞元的狀態中將前述微發光二極體畫素電連接至前述對應互補式金屬氧化物半導體胞元;其中前述微發光二極體畫素經由前述凸塊倒裝晶片接合至形成於前述互補式金屬氧化物半導體背板上的前述對應互補式金屬氧化物半導體胞元,以便前述微發光二極體畫素個別地受控。
- 如請求項1所記載之微發光二極體陣列顯示裝置,其中前述微發光二極體畫素係藉由在基板上依序地生長第一傳導性型半導體層、有源層及第二傳導性型半導體層並蝕刻前述複數個層而形成;前述微發光二極體畫素具有垂直結構,包含依序地形成之前述第一傳導性型半導體層、前述有源層及前述第二傳導性型半導體層,且前述有源層及前述第二傳導性型半導體層自前述第一傳導性型半導體層之其中無任何前述微發光二極體畫素形成的 暴露部分移除。
- 如請求項2所記載之微發光二極體陣列顯示裝置,其中第一傳導性型金屬層形成於前述第一傳導性型半導體層之其中無任何前述微發光二極體畫素形成的前述部分之上,且與前述微發光二極體畫素間隔開。
- 如請求項3所記載之微發光二極體陣列顯示裝置,其中前述第一傳導性型金屬層在前述第一傳導性型半導體層上沿前述微發光二極體面板之周邊形成。
- 如請求項3所記載之微發光二極體陣列顯示裝置,其中前述第一傳導性型金屬層具有與前述微發光二極體畫素相同的高度。
- 如請求項3所記載之微發光二極體陣列顯示裝置,其中前述第一傳導性型金屬層作為前述微發光二極體畫素之公共電極行使功能。
- 如請求項3所記載之微發光二極體陣列顯示裝置,其中前述互補式金屬氧化物半導體背板包含在對應於前述第一傳導性型金屬層之位置處形成的公共胞元,且前述第一傳導性型金屬層經由公共凸塊電連接至前述公共胞元。
- 如請求項2所記載之微發光二極體陣列顯示裝置,其中前述第一傳導性型為n型,且前述第二傳導性型為p型。
- 如請求項2所記載之微發光二極體陣列顯示裝置,其中前述基板由選自藍寶石、SiC、Si、玻璃及ZnO之 材料製成。
- 如請求項2所記載之微發光二極體陣列顯示裝置,其中前述凸塊形成於前述互補式金屬氧化物半導體胞元上,且藉由加熱被熔融,以使得前述互補式金屬氧化物半導體胞元電連接至前述對應微發光二極體畫素。
- 一種微發光二極體陣列顯示裝置,包含:第一微發光二極體面板、第二微發光二極體面板及第三微發光二極體面板,其發射具有不同波長帶的光,前述微發光二極體面板中之每一者包含複數個微發光二極體畫素;單個互補式金屬氧化物半導體背板,其包含對應於前述微發光二極體畫素之複數個互補式金屬氧化物半導體胞元;以及凸塊,其在其中前述第一微發光二極體面板、前述第二微發光二極體面板及前述第三微發光二極體面板之前述微發光二極體畫素佈置成面向前述互補式金屬氧化物半導體胞元的狀態中將前述第一微發光二極體面板、前述第二微發光二極體面板及前述第三微發光二極體面板之前述微發光二極體畫素電連接至前述對應互補式金屬氧化物半導體胞元;其中前述第一微發光二極體面板、前述第二微發光二極體面板及前述第三微發光二極體面板之前述微發光二極體畫素經由前述凸塊倒裝晶片接合至 形成於前述互補式金屬氧化物半導體背板上的前述對應互補式金屬氧化物半導體胞元,以便前述微發光二極體畫素個別地受控。
- 如請求項11所記載之微發光二極體陣列顯示裝置,其中前述第一微發光二極體面板、前述第二微發光二極體面板及前述第三微發光二極體面板中之每一者的前述微發光二極體畫素係藉由在基板上依序地生長第一傳導性型半導體層、有源層及第二傳導性型半導體層並蝕刻前述複數個層而形成;前述第一微發光二極體面板、前述第二微發光二極體面板及前述第三微發光二極體面板中之每一者的前述微發光二極體畫素具有垂直結構,包含依序地形成之前述基板、前述第一傳導性型半導體層、前述有源層及前述第二傳導性型半導體層,且前述有源層及前述第二傳導性型半導體層自前述第一傳導性型半導體層之其中前述第一微發光二極體面板、前述第二微發光二極體面板及前述第三微發光二極體面板中之每一者的無任何前述微發光二極體畫素形成的暴露部分移除。
- 如請求項12所記載之微發光二極體陣列顯示裝置,其中第一傳導性型金屬層形成於前述第一傳導性型半導體層之其中前述第一微發光二極體面板、前述第二微發光二極體面板及前述第三微發光二極體面板中之每一者的無任何前述微發光二極體畫素形成的 前述部分之上,且與前述第一微發光二極體面板、前述第二微發光二極體面板及前述第三微發光二極體面板中之每一者的前述微發光二極體畫素間隔開。
- 如請求項13所記載之微發光二極體陣列顯示裝置,其中前述第一微發光二極體面板、前述第二微發光二極體面板及前述第三微發光二極體面板中之每一者的前述第一傳導性型金屬層在前述微發光二極體面板之前述第一傳導性型半導體層上沿前述微發光二極體面板之周邊形成。
- 如請求項13所記載之微發光二極體陣列顯示裝置,其中前述第一微發光二極體面板、前述第二微發光二極體面板及前述第三微發光二極體面板中之每一者的前述第一傳導性型金屬層具有與前述微發光二極體面板之前述微發光二極體畫素相同的高度。
- 如請求項13所記載之微發光二極體陣列顯示裝置,其中前述第一微發光二極體面板、前述第二微發光二極體面板及前述第三微發光二極體面板中之每一者的前述第一傳導性型金屬層作為前述微發光二極體面板之前述微發光二極體畫素的公共電極行使功能。
- 如請求項13所記載之微發光二極體陣列顯示裝置,其中前述單個互補式金屬氧化物半導體背板包含在對應於前述第一微發光二極體面板、前述第二微發光二極體面板及前述第三微發光二極體面板中之每一者的前述第一傳導性型金屬層之位置處形成的公共 胞元,且前述第一傳導性型金屬層經由公共凸塊電連接至前述公共胞元。
- 如請求項12所記載之微發光二極體陣列顯示裝置,其中前述第一傳導性型為n型,且前述第二傳導性型為p型。
- 如請求項12所記載之微發光二極體陣列顯示裝置,其中前述基板由選自藍寶石、SiC、Si、玻璃及ZnO之材料製成。
- 如請求項12所記載之微發光二極體陣列顯示裝置,其中前述凸塊形成於前述互補式金屬氧化物半導體胞元上,且藉由加熱被熔融,以使得前述互補式金屬氧化物半導體胞元電連接至前述對應微發光二極體畫素。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI661575B (zh) * | 2018-07-20 | 2019-06-01 | 錼創顯示科技股份有限公司 | 微型發光元件及顯示裝置 |
CN110349988A (zh) * | 2018-04-03 | 2019-10-18 | 三星电子株式会社 | 发光二极管显示装置 |
CN112639937A (zh) * | 2018-09-05 | 2021-04-09 | 株式会社半导体能源研究所 | 显示装置、显示模块、电子设备及显示装置的制造方法 |
Families Citing this family (55)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102617466B1 (ko) * | 2016-07-18 | 2023-12-26 | 주식회사 루멘스 | 마이크로 led 어레이 디스플레이 장치 |
WO2018137139A1 (en) * | 2017-01-24 | 2018-08-02 | Goertek. Inc | Micro-led device, display apparatus and method for manufacturing a micro-led device |
KR102305180B1 (ko) | 2017-04-25 | 2021-09-28 | 주식회사 루멘스 | 마이크로 led 디스플레이 장치 및 그 제조방법 |
KR102399464B1 (ko) * | 2017-06-27 | 2022-05-19 | 주식회사 루멘스 | 엘이디 패널 |
WO2019014036A1 (en) | 2017-07-11 | 2019-01-17 | Corning Incorporated | MOSAIC SCREENS AND METHODS OF MAKING SAME |
CN111052418A (zh) * | 2017-07-31 | 2020-04-21 | 耶鲁大学 | 纳米多孔微led器件及其制造方法 |
CN111108613B (zh) * | 2017-09-13 | 2024-01-16 | 夏普株式会社 | Led单元、图像显示元件及其制造方法 |
WO2019083154A1 (ko) * | 2017-10-26 | 2019-05-02 | 주식회사 루멘스 | 개별 제어되는 마이크로 led 픽셀들을 갖는 플래쉬 유닛을 포함하는 촬상 장치 및 피부 진단용 촬상 장치 |
KR102456882B1 (ko) * | 2017-11-24 | 2022-10-21 | 주식회사 루멘스 | 고효율 마이크로 엘이디 모듈의 제조방법 |
US10989376B2 (en) * | 2017-11-28 | 2021-04-27 | Facebook Technologies, Llc | Assembling of strip of micro light emitting diodes onto backplane |
JP7079106B2 (ja) * | 2018-01-24 | 2022-06-01 | シャープ株式会社 | 画像表示素子、及び画像表示素子の製造方法 |
KR101997104B1 (ko) * | 2018-02-21 | 2019-07-05 | 순천대학교 산학협력단 | 마이크로 어레이 발광 다이오드 및 이의 제조 방법 |
TWI672683B (zh) * | 2018-04-03 | 2019-09-21 | 友達光電股份有限公司 | 顯示面板 |
WO2019225761A1 (ja) | 2018-05-24 | 2019-11-28 | 大日本印刷株式会社 | 自発光型表示体用または直下型バックライト用の封止材シート、自発光型表示体、直下型バックライト |
EP3803976B1 (en) | 2018-05-24 | 2024-05-22 | Lumiode, Inc. | Led display structures and fabrication of same |
JP7066537B2 (ja) | 2018-06-06 | 2022-05-13 | 株式会社ジャパンディスプレイ | 表示装置及び表示装置の駆動方法 |
JP7073198B2 (ja) | 2018-06-07 | 2022-05-23 | 株式会社ジャパンディスプレイ | 表示装置 |
KR102033108B1 (ko) | 2018-07-06 | 2019-10-16 | 엘지전자 주식회사 | 디스플레이 장치 및 그 구동 방법 |
KR102587133B1 (ko) | 2018-07-19 | 2023-10-10 | 삼성디스플레이 주식회사 | 표시 장치 |
CN110739380B (zh) * | 2018-07-20 | 2021-02-19 | 錼创显示科技股份有限公司 | 微型发光元件及显示装置 |
KR102603399B1 (ko) | 2018-08-09 | 2023-11-17 | 삼성디스플레이 주식회사 | 표시장치 및 그 제조방법 |
JP7206321B2 (ja) | 2018-09-10 | 2023-01-17 | ルミレッズ ホールディング ベーフェー | 車両のための適応型ヘッドランプシステム |
US11091087B2 (en) | 2018-09-10 | 2021-08-17 | Lumileds Llc | Adaptive headlamp system for vehicles |
KR102624297B1 (ko) | 2018-10-02 | 2024-01-15 | 삼성디스플레이 주식회사 | 표시 장치 |
CN111048543A (zh) * | 2018-10-12 | 2020-04-21 | 致伸科技股份有限公司 | 显示模块 |
KR20200062762A (ko) | 2018-11-27 | 2020-06-04 | 삼성전자주식회사 | 마이크로 광원 어레이, 이를 포함한 디스플레이 장치 및 디스플레이 장치의 제조 방법 |
EP3899920A4 (en) | 2018-12-21 | 2022-09-28 | Lumiode, Inc. | ADDRESSING FOR EMISSIVE INDICATORS |
EP3903135A4 (en) * | 2018-12-28 | 2022-10-19 | Magic Leap, Inc. | VIRTUAL AND AUGMENTED REALITY DISPLAY SYSTEM WITH MICRO-EMISSIVE DISPLAYS |
WO2020142208A1 (en) * | 2019-01-02 | 2020-07-09 | Lumiode, Inc. | System and method of fabricating display structures |
US11355665B2 (en) | 2019-06-19 | 2022-06-07 | Facebook Technologies, Llc | Process flow for hybrid TFT-based micro display projector |
CN113366372B (zh) * | 2019-02-05 | 2023-07-28 | 元平台技术有限公司 | 基于混合tft的微型显示投影仪的工艺流程 |
JP2020134716A (ja) | 2019-02-20 | 2020-08-31 | 株式会社ジャパンディスプレイ | 表示装置 |
CN109888085B (zh) * | 2019-03-11 | 2021-01-26 | 京东方科技集团股份有限公司 | 显示面板及其制备方法 |
JP7289681B2 (ja) * | 2019-03-20 | 2023-06-12 | 株式会社ジャパンディスプレイ | 表示装置 |
US11626448B2 (en) * | 2019-03-29 | 2023-04-11 | Lumileds Llc | Fan-out light-emitting diode (LED) device substrate with embedded backplane, lighting system and method of manufacture |
CN109841710B (zh) * | 2019-04-12 | 2020-05-15 | 南京大学 | 用于透明显示的GaN Micro-LED阵列器件及其制备方法 |
US11637219B2 (en) | 2019-04-12 | 2023-04-25 | Google Llc | Monolithic integration of different light emitting structures on a same substrate |
WO2020219039A1 (en) * | 2019-04-24 | 2020-10-29 | Hewlett-Packard Development Company, L.P. | Displays with pixels coupled by beam splitters |
US11710760B2 (en) | 2019-06-21 | 2023-07-25 | Semiconductor Energy Laboratory Co., Ltd. | Display device, display module, electronic device, and manufacturing method of display device |
JP2021012282A (ja) | 2019-07-05 | 2021-02-04 | 株式会社ジャパンディスプレイ | 表示装置 |
US11508700B2 (en) * | 2019-12-10 | 2022-11-22 | Meta Platforms Technologies, Llc | Left and right projectors for display device |
KR20210081512A (ko) | 2019-12-23 | 2021-07-02 | 삼성디스플레이 주식회사 | 표시 장치 및 제조 방법 |
CN111063270B (zh) * | 2019-12-30 | 2022-06-21 | 錼创显示科技股份有限公司 | 微型发光元件显示装置 |
KR20210089842A (ko) | 2020-01-09 | 2021-07-19 | 주식회사 엘지화학 | 마이크로 led 디스플레이 |
KR102194978B1 (ko) * | 2020-04-29 | 2020-12-24 | (주) 리가스텍 | 마이크로 디스플레이 장치 및 이를 제조하는 방법 |
CN115997289A (zh) * | 2020-07-21 | 2023-04-21 | Lg电子株式会社 | 用于制造显示装置的转移基板、显示装置及其制造方法 |
US11830862B2 (en) | 2020-11-12 | 2023-11-28 | Excellence Opto. Inc. | Chip structure of micro light-emitting diode display |
CN112669715B (zh) * | 2020-12-24 | 2022-08-05 | 深圳市华星光电半导体显示技术有限公司 | 连接件、显示面板及其制作方法、显示装置 |
US11489008B2 (en) | 2021-02-23 | 2022-11-01 | Toyoda Gosei Co., Ltd. | Light-emitting device |
WO2023112599A1 (ja) * | 2021-12-14 | 2023-06-22 | ソニーセミコンダクタソリューションズ株式会社 | 発光装置及び電子機器 |
KR102579242B1 (ko) | 2022-02-22 | 2023-09-18 | 한국에너지공과대학교 | 마이크로 led 표시 장치 및 마이크로 led 표시 장치 제조 방법 |
CN114627773B (zh) * | 2022-03-11 | 2024-02-20 | 武汉华星光电半导体显示技术有限公司 | 拼接显示面板 |
WO2023244694A1 (en) * | 2022-06-15 | 2023-12-21 | Lumileds Llc | Sparse led array applications |
KR102607680B1 (ko) | 2023-02-07 | 2023-11-29 | 웨이브로드 주식회사 | 마이크로디스플레이 패널 제조 방법 |
KR102665039B1 (ko) | 2023-03-13 | 2024-05-13 | 웨이브로드 주식회사 | 칼라필터가 불필요한 수직 적층형 마이크로디스플레이 패널 및 그 제조 방법 |
Family Cites Families (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS537278B2 (zh) * | 1973-07-17 | 1978-03-16 | ||
JP3195720B2 (ja) * | 1994-12-20 | 2001-08-06 | シャープ株式会社 | 多色led素子およびその多色led素子を用いたled表示装置、並びに多色led素子の製造方法 |
JP3976812B2 (ja) * | 1995-03-09 | 2007-09-19 | セイコーエプソン株式会社 | 偏光照明装置および投写型表示装置 |
US5621225A (en) * | 1996-01-18 | 1997-04-15 | Motorola | Light emitting diode display package |
JP2001044502A (ja) * | 1999-07-28 | 2001-02-16 | Matsushita Electronics Industry Corp | 複合発光素子及びその製造方法 |
US6486499B1 (en) * | 1999-12-22 | 2002-11-26 | Lumileds Lighting U.S., Llc | III-nitride light-emitting device with increased light generating capability |
JP2001326388A (ja) * | 2000-05-12 | 2001-11-22 | Rohm Co Ltd | 半導体発光装置 |
JP2001343706A (ja) * | 2000-05-31 | 2001-12-14 | Sony Corp | 映像表示装置 |
JP3906653B2 (ja) * | 2000-07-18 | 2007-04-18 | ソニー株式会社 | 画像表示装置及びその製造方法 |
KR100470904B1 (ko) | 2002-07-20 | 2005-03-10 | 주식회사 비첼 | 고휘도 질화물 마이크로 발광 다이오드 및 그 제조방법 |
JP2004055944A (ja) * | 2002-07-23 | 2004-02-19 | Matsushita Electric Ind Co Ltd | 半導体発光装置の製造方法 |
JP2004079972A (ja) * | 2002-08-22 | 2004-03-11 | Fuji Photo Film Co Ltd | 面発光型発光素子 |
JP2005079385A (ja) * | 2003-09-01 | 2005-03-24 | Toshiba Corp | 光半導体装置および光信号入出力装置 |
US7285801B2 (en) * | 2004-04-02 | 2007-10-23 | Lumination, Llc | LED with series-connected monolithically integrated mesas |
JP2006073618A (ja) * | 2004-08-31 | 2006-03-16 | Toyoda Gosei Co Ltd | 光学素子およびその製造方法 |
JP2006012916A (ja) * | 2004-06-22 | 2006-01-12 | Toyoda Gosei Co Ltd | 発光素子 |
JP2007324583A (ja) * | 2006-05-01 | 2007-12-13 | Mitsubishi Chemicals Corp | 集積型半導体発光装置およびその製造方法 |
JP2010192802A (ja) * | 2009-02-20 | 2010-09-02 | Sony Corp | 実装基板および表示装置 |
AU2010273544B2 (en) | 2009-07-15 | 2013-05-02 | Cardiac Pacemakers, Inc. | Remote sensing in an implantable medical device |
JP2011113989A (ja) * | 2009-11-24 | 2011-06-09 | Oki Data Corp | 表示パネル及び投射型表示装置 |
WO2011071559A1 (en) * | 2009-12-09 | 2011-06-16 | Nano And Advanced Materials Institute Limited | Method for manufacturing a monolithic led micro-display on an active matrix panel using flip-chip technology and display apparatus having the monolithic led micro-display |
US8642363B2 (en) * | 2009-12-09 | 2014-02-04 | Nano And Advanced Materials Institute Limited | Monolithic full-color LED micro-display on an active matrix panel manufactured using flip-chip technology |
KR101666442B1 (ko) * | 2010-03-25 | 2016-10-17 | 엘지이노텍 주식회사 | 발광 다이오드 및 이를 포함하는 발광 소자 패키지 |
KR101150861B1 (ko) | 2010-08-16 | 2012-06-13 | 한국광기술원 | 멀티셀 구조를 갖는 발광다이오드 및 그 제조방법 |
CN104081257B (zh) * | 2011-12-06 | 2018-05-15 | 奥斯坦多科技公司 | 空间-光学以及时间空间-光学定向光调制器 |
DE102011056888A1 (de) * | 2011-12-22 | 2013-06-27 | Osram Opto Semiconductors Gmbh | Anzeigevorrichtung und Verfahren zur Herstellung einer Anzeigevorrichtung |
JP2013179215A (ja) * | 2012-02-29 | 2013-09-09 | Toyohashi Univ Of Technology | Ledアレイ及び光電子集積装置 |
DE102012217957B4 (de) * | 2012-10-01 | 2014-10-09 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung einer Mikro-LED-Matrix |
US9159700B2 (en) * | 2012-12-10 | 2015-10-13 | LuxVue Technology Corporation | Active matrix emissive micro LED display |
CN103456729B (zh) * | 2013-07-26 | 2016-09-21 | 利亚德光电股份有限公司 | 发光二极管显示屏 |
EP3084338A4 (en) * | 2013-12-18 | 2017-07-26 | Leupold & Stevens, Inc. | Micro-pixelated led reticle display for optical aiming devices |
US9207904B2 (en) * | 2013-12-31 | 2015-12-08 | Ultravision Technologies, Llc | Multi-panel display with hot swappable display panels and methods of servicing thereof |
US9831387B2 (en) * | 2014-06-14 | 2017-11-28 | Hiphoton Co., Ltd. | Light engine array |
FR3023065B1 (fr) * | 2014-06-27 | 2017-12-15 | Commissariat Energie Atomique | Dispositif optoelectronique a jonction p-n permettant une ionisation de dopants par effet de champ |
KR20160027730A (ko) * | 2014-09-02 | 2016-03-10 | 서울바이오시스 주식회사 | 발광 다이오드 |
GB201420452D0 (en) * | 2014-11-18 | 2014-12-31 | Mled Ltd | Integrated colour led micro-display |
KR102617466B1 (ko) * | 2016-07-18 | 2023-12-26 | 주식회사 루멘스 | 마이크로 led 어레이 디스플레이 장치 |
WO2018117361A1 (ko) * | 2016-12-23 | 2018-06-28 | 주식회사 루멘스 | 마이크로 엘이디 모듈 및 그 제조방법 |
JP6366799B1 (ja) * | 2017-02-10 | 2018-08-01 | ルーメンス カンパニー リミテッド | マイクロledモジュール及びその製造方法 |
KR102399464B1 (ko) * | 2017-06-27 | 2022-05-19 | 주식회사 루멘스 | 엘이디 패널 |
-
2016
- 2016-07-18 KR KR1020160090600A patent/KR102617466B1/ko active IP Right Grant
- 2016-09-23 JP JP2016185382A patent/JP6131374B1/ja active Active
-
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- 2017-04-17 JP JP2017081498A patent/JP6445075B2/ja active Active
- 2017-05-23 WO PCT/KR2017/005354 patent/WO2018016728A1/ko unknown
- 2017-05-23 EP EP17831202.1A patent/EP3487266A4/en active Pending
- 2017-05-23 CN CN201780042188.8A patent/CN109479354B/zh active Active
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- 2017-06-04 US US15/613,233 patent/US10062675B2/en active Active
-
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- 2018-07-26 US US16/046,176 patent/US10607973B2/en active Active
- 2018-07-26 US US16/046,161 patent/US10784241B2/en active Active
- 2018-11-28 JP JP2018222671A patent/JP6722262B2/ja active Active
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110349988A (zh) * | 2018-04-03 | 2019-10-18 | 三星电子株式会社 | 发光二极管显示装置 |
CN110349988B (zh) * | 2018-04-03 | 2024-05-07 | 三星电子株式会社 | 发光二极管显示装置 |
TWI661575B (zh) * | 2018-07-20 | 2019-06-01 | 錼創顯示科技股份有限公司 | 微型發光元件及顯示裝置 |
US10818819B2 (en) | 2018-07-20 | 2020-10-27 | Pixeled Display Co., Ltd. | Micro light emitting device and display apparatus |
CN112639937A (zh) * | 2018-09-05 | 2021-04-09 | 株式会社半导体能源研究所 | 显示装置、显示模块、电子设备及显示装置的制造方法 |
TWI829746B (zh) * | 2018-09-05 | 2024-01-21 | 日商半導體能源研究所股份有限公司 | 顯示裝置、顯示模組、電子裝置及顯示裝置的製造方法 |
US11908850B2 (en) | 2018-09-05 | 2024-02-20 | Semiconductor Energy Laboratory Co., Ltd. | Display device, display module, electronic device, and method for manufacturing display device |
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CN109479354B (zh) | 2021-05-14 |
JP2018014481A (ja) | 2018-01-25 |
JP6445075B2 (ja) | 2018-12-26 |
US10607973B2 (en) | 2020-03-31 |
KR102617466B1 (ko) | 2023-12-26 |
JP2018014475A (ja) | 2018-01-25 |
WO2018016728A1 (ko) | 2018-01-25 |
EP3487266A4 (en) | 2019-06-26 |
CN109479354A (zh) | 2019-03-15 |
JP6131374B1 (ja) | 2017-05-17 |
JP2019068082A (ja) | 2019-04-25 |
EP3487266A1 (en) | 2019-05-22 |
KR20180009116A (ko) | 2018-01-26 |
JP6722262B2 (ja) | 2020-07-15 |
US20180331086A1 (en) | 2018-11-15 |
US10062675B2 (en) | 2018-08-28 |
US20180019233A1 (en) | 2018-01-18 |
US10784241B2 (en) | 2020-09-22 |
US20180331085A1 (en) | 2018-11-15 |
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