JP6722262B2 - マイクロledアレイディスプレイ装置 - Google Patents
マイクロledアレイディスプレイ装置 Download PDFInfo
- Publication number
- JP6722262B2 JP6722262B2 JP2018222671A JP2018222671A JP6722262B2 JP 6722262 B2 JP6722262 B2 JP 6722262B2 JP 2018222671 A JP2018222671 A JP 2018222671A JP 2018222671 A JP2018222671 A JP 2018222671A JP 6722262 B2 JP6722262 B2 JP 6722262B2
- Authority
- JP
- Japan
- Prior art keywords
- micro led
- semiconductor layer
- conductive
- type semiconductor
- cmos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 claims description 67
- 239000002184 metal Substances 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 14
- 239000003990 capacitor Substances 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Led Devices (AREA)
- Wire Bonding (AREA)
Description
また本発明の目的は、一つの基板上に複数のマイクロLEDピクセルを形成する場合、基板上に赤色、緑色、及び青色の光を発光する構造を形成する際の困難さを解決するために、CMOSバックプレーン上にフリップチップボンディングされたマイクロLEDアレイディスプレイ装置を提供することにある。
更に、単一CMOSバックプレーンに、赤色、緑色、及び青色の光のそれぞれを発光する複数のマイクロLEDパネルを、各バンプを用いてフリップチップボンディングし、光学系を用いて三つの色相を1ヶ所に集中させることによってフルカラーの具現を可能にすることから、従来の一つの基板上に複数のマイクロLEDピクセルを形成する場合に、基板上に赤色、緑色、及び青色の光を発光する構造を形成する際の技術的困難さを解消できるという効果を有する。
110 基板
120、132 第1導電型半導体層
130 マイクロLEDピクセル
134 活性層
136 第2導電型半導体層
140 第1導電型メタル層
200、2000 CMOSバックプレーン
230 CMOSセル
240 共通セル
340 共通バンプ
300、330、3000、3100、3200、3300 バンプ
2100、2200、2300 CMOSセル領域
700 駆動IC
Claims (15)
- 第1導電型半導体層、活性層、及び第2導電型半導体層で形成された垂直構造が一つのマイクロLEDピクセルを形成する複数のマイクロLEDピクセル、及び前記複数のマイクロLEDピクセルが形成されずに露出した前記第1導電型半導体層上に形成された第1導電型メタル層を含むマイクロLEDパネルと、
前記一つのマイクロLEDピクセルの前記第2導電型半導体層に個別的に対応するCMOSセル、及び前記CMOSセルに隣接して形成され、前記第1導電型メタル層に個別的に対応する共通セルを含むCMOSバックプレーンと、
前記一つのマイクロLEDピクセルの前記第2導電型半導体層に個別的に対応する位置に形成され、前記一つのマイクロLEDピクセルに対応する前記各CMOSセルとの間を電気的に連結するバンプと、を備え、
前記第1導電型メタル層に個別的に対応する位置に形成され、前記第1導電型メタル層と前記CMOSバックプレーンの前記共通セルとの間を電気的に連結する共通バンプと、を含み、
前記第1導電型メタル層の高さは、前記各マイクロLEDピクセルの高さと同一であることを特徴とするマイクロLEDアレイディスプレイ装置。 - 前記第1導電型メタル層は、前記各マイクロLEDピクセルの共通電極であることを特徴とする請求項1に記載のマイクロLEDアレイディスプレイ装置。
- 前記CMOSバックプレーンは、AM(Active Matrix)パネルであるか又は少なくとも二つのトランジスタ及び一つのキャパシタを含むピクセル駆動回路を含むことを特徴とする請求項1に記載のマイクロLEDアレイディスプレイ装置。
- 前記各マイクロLEDピクセルは、前記第1導電型半導体層、前記活性層、及び前記第2導電型半導体層を順次成長させた基板を含むことを特徴とする請求項1に記載のマイクロLEDアレイディスプレイ装置。
- 前記各CMOSセルのそれぞれに前記各マイクロLEDピクセルが個別的に対応するように前記バンプ及び前記共通バンプでフリップチップボンディングされることを特徴とする請求項1に記載のマイクロLEDアレイディスプレイ装置。
- 前記第1導電型メタル層は、前記第1導電型半導体層上で前記マイクロLEDパネルの外郭に沿って形成されることを特徴とする請求項1に記載のマイクロLEDアレイディスプレイ装置。
- 前記第1導電型半導体層はn型半導体層であり、前記第2導電型半導体層はp型半導体層であることを特徴とする請求項1に記載のマイクロLEDアレイディスプレイ装置。
- 前記第1導電型半導体層はp型半導体層であり、前記第2導電型半導体層はn型半導体層であることを特徴とする請求項1に記載のマイクロLEDアレイディスプレイ装置。
- 第1導電型半導体層、活性層、及び第2導電型半導体層で形成された垂直構造が一つのマイクロLEDピクセルを形成する複数のマイクロLEDピクセル、及び前記複数のマイクロLEDピクセルが形成されずに露出した前記第1導電型半導体層上に形成された第1導電型メタル層を含むマイクロLEDパネルと、
前記一つのマイクロLEDピクセルの前記第2導電型半導体層に個別的に対応するCMOSセル、及び前記CMOSセルに隣接して形成され、前記第1導電型メタル層に個別的に対応する共通セルを含むCMOSバックプレーンと、
前記一つのマイクロLEDピクセルの前記第2導電型半導体層に個別的に対応する位置に形成され、前記一つのマイクロLEDピクセルに対応する前記各CMOSセルとの間を電気的に連結するバンプと、を備え、
前記第1導電型メタル層に個別的に対応する位置に形成され、前記第1導電型メタル層と前記CMOSバックプレーンの前記共通セルとの間を電気的に連結する共通バンプと、を含み、
前記第1導電型メタル層は、前記各マイクロLEDピクセルの共通電極であり、
前記第1導電型メタル層の高さは、前記各マイクロLEDピクセルの高さと同一であることを特徴とするマイクロLEDアレイディスプレイ装置。 - 前記CMOSバックプレーンは、AM(Active Matrix)パネルであるか又は少なくとも二つのトランジスタ及び一つのキャパシタを含むピクセル駆動回路を含むことを特徴とする請求項9に記載のマイクロLEDアレイディスプレイ装置。
- 前記第1導電型半導体層はn型半導体層であり、前記第2導電型半導体層はp型半導体層であることを特徴とする請求項9に記載のマイクロLEDアレイディスプレイ装置。
- 前記第1導電型半導体層はp型半導体層であり、前記第2導電型半導体層はn型半導体層であることを特徴とする請求項9に記載のマイクロLEDアレイディスプレイ装置。
- 前記各マイクロLEDピクセルは、前記第1導電型半導体層、前記活性層、及び前記第2導電型半導体層を順次成長させた基板を含むことを特徴とする請求項9に記載のマイクロLEDアレイディスプレイ装置。
- 前記各CMOSセルのそれぞれに前記各マイクロLEDピクセルが個別的に対応するように前記バンプ及び前記共通バンプでフリップチップボンディングされることを特徴とする請求項9に記載のマイクロLEDアレイディスプレイ装置。
- 前記第1導電型メタル層は、前記第1導電型半導体層上で前記マイクロLEDパネルの外郭に沿って形成されることを特徴とする請求項9に記載のマイクロLEDアレイディスプレイ装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020160090600A KR102617466B1 (ko) | 2016-07-18 | 2016-07-18 | 마이크로 led 어레이 디스플레이 장치 |
KR10-2016-0090600 | 2016-07-18 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017081498A Division JP6445075B2 (ja) | 2016-07-18 | 2017-04-17 | マイクロledアレイディスプレイ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019068082A JP2019068082A (ja) | 2019-04-25 |
JP6722262B2 true JP6722262B2 (ja) | 2020-07-15 |
Family
ID=58714722
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016185382A Active JP6131374B1 (ja) | 2016-07-18 | 2016-09-23 | マイクロledアレイディスプレイ装置 |
JP2017081498A Active JP6445075B2 (ja) | 2016-07-18 | 2017-04-17 | マイクロledアレイディスプレイ装置 |
JP2018222671A Active JP6722262B2 (ja) | 2016-07-18 | 2018-11-28 | マイクロledアレイディスプレイ装置 |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016185382A Active JP6131374B1 (ja) | 2016-07-18 | 2016-09-23 | マイクロledアレイディスプレイ装置 |
JP2017081498A Active JP6445075B2 (ja) | 2016-07-18 | 2017-04-17 | マイクロledアレイディスプレイ装置 |
Country Status (7)
Country | Link |
---|---|
US (3) | US10062675B2 (ja) |
EP (1) | EP3487266B1 (ja) |
JP (3) | JP6131374B1 (ja) |
KR (1) | KR102617466B1 (ja) |
CN (1) | CN109479354B (ja) |
TW (1) | TW201804608A (ja) |
WO (1) | WO2018016728A1 (ja) |
Families Citing this family (64)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102617466B1 (ko) * | 2016-07-18 | 2023-12-26 | 주식회사 루멘스 | 마이크로 led 어레이 디스플레이 장치 |
US11205677B2 (en) * | 2017-01-24 | 2021-12-21 | Goertek, Inc. | Micro-LED device, display apparatus and method for manufacturing a micro-LED device |
KR102305180B1 (ko) * | 2017-04-25 | 2021-09-28 | 주식회사 루멘스 | 마이크로 led 디스플레이 장치 및 그 제조방법 |
KR102399464B1 (ko) * | 2017-06-27 | 2022-05-19 | 주식회사 루멘스 | 엘이디 패널 |
US11425826B2 (en) | 2017-07-11 | 2022-08-23 | Corning Incorporated | Tiled displays and methods of manufacturing the same |
CN111052418A (zh) * | 2017-07-31 | 2020-04-21 | 耶鲁大学 | 纳米多孔微led器件及其制造方法 |
US11393963B2 (en) * | 2017-09-13 | 2022-07-19 | Sharp Kabushiki Kaisha | LED unit, image display element, and method of manufacturing the same |
WO2019083154A1 (ko) * | 2017-10-26 | 2019-05-02 | 주식회사 루멘스 | 개별 제어되는 마이크로 led 픽셀들을 갖는 플래쉬 유닛을 포함하는 촬상 장치 및 피부 진단용 촬상 장치 |
KR102456882B1 (ko) * | 2017-11-24 | 2022-10-21 | 주식회사 루멘스 | 고효율 마이크로 엘이디 모듈의 제조방법 |
US10989376B2 (en) | 2017-11-28 | 2021-04-27 | Facebook Technologies, Llc | Assembling of strip of micro light emitting diodes onto backplane |
JP7079106B2 (ja) * | 2018-01-24 | 2022-06-01 | シャープ株式会社 | 画像表示素子、及び画像表示素子の製造方法 |
KR101997104B1 (ko) * | 2018-02-21 | 2019-07-05 | 순천대학교 산학협력단 | 마이크로 어레이 발광 다이오드 및 이의 제조 방법 |
TWI672683B (zh) * | 2018-04-03 | 2019-09-21 | 友達光電股份有限公司 | 顯示面板 |
KR102521582B1 (ko) * | 2018-04-03 | 2023-04-12 | 삼성전자주식회사 | 발광 다이오드 디스플레이 장치 |
CN113506848B (zh) | 2018-05-24 | 2024-07-12 | 大日本印刷株式会社 | 自发光型显示体用或直下型背光源用的密封材料片、自发光型显示体、直下型背光源 |
EP3803976B1 (en) | 2018-05-24 | 2024-05-22 | Lumiode, Inc. | Led display structures and fabrication of same |
JP7066537B2 (ja) | 2018-06-06 | 2022-05-13 | 株式会社ジャパンディスプレイ | 表示装置及び表示装置の駆動方法 |
JP7073198B2 (ja) | 2018-06-07 | 2022-05-23 | 株式会社ジャパンディスプレイ | 表示装置 |
KR102033108B1 (ko) | 2018-07-06 | 2019-10-16 | 엘지전자 주식회사 | 디스플레이 장치 및 그 구동 방법 |
KR102587133B1 (ko) | 2018-07-19 | 2023-10-10 | 삼성디스플레이 주식회사 | 표시 장치 |
TWI661575B (zh) | 2018-07-20 | 2019-06-01 | 錼創顯示科技股份有限公司 | 微型發光元件及顯示裝置 |
CN110739380B (zh) * | 2018-07-20 | 2021-02-19 | 錼创显示科技股份有限公司 | 微型发光元件及显示装置 |
KR102603399B1 (ko) | 2018-08-09 | 2023-11-17 | 삼성디스플레이 주식회사 | 표시장치 및 그 제조방법 |
CN112639937B (zh) * | 2018-09-05 | 2023-06-23 | 株式会社半导体能源研究所 | 显示装置、显示模块、电子设备及显示装置的制造方法 |
US11034286B2 (en) | 2018-09-10 | 2021-06-15 | Lumileds Holding B.V. | Adaptive headlamp system for vehicles |
JP7206321B2 (ja) * | 2018-09-10 | 2023-01-17 | ルミレッズ ホールディング ベーフェー | 車両のための適応型ヘッドランプシステム |
KR102624297B1 (ko) | 2018-10-02 | 2024-01-15 | 삼성디스플레이 주식회사 | 표시 장치 |
CN111048543A (zh) * | 2018-10-12 | 2020-04-21 | 致伸科技股份有限公司 | 显示模块 |
KR20200062762A (ko) | 2018-11-27 | 2020-06-04 | 삼성전자주식회사 | 마이크로 광원 어레이, 이를 포함한 디스플레이 장치 및 디스플레이 장치의 제조 방법 |
EP3899920A4 (en) | 2018-12-21 | 2022-09-28 | Lumiode, Inc. | ADDRESSING FOR EMISSIVE INDICATORS |
CN113544560A (zh) * | 2018-12-28 | 2021-10-22 | 奇跃公司 | 具有发光微显示器的虚拟和增强现实显示系统 |
EP3906581B1 (en) * | 2019-01-02 | 2024-09-11 | Lumiode, Inc. | Method of fabricating display structures |
TW202101063A (zh) * | 2019-02-05 | 2021-01-01 | 美商菲絲博克科技有限公司 | 用於基於混合式tft的微型顯示投影器的處理流程 |
US11355665B2 (en) | 2019-06-19 | 2022-06-07 | Facebook Technologies, Llc | Process flow for hybrid TFT-based micro display projector |
JP2020134716A (ja) | 2019-02-20 | 2020-08-31 | 株式会社ジャパンディスプレイ | 表示装置 |
CN109888085B (zh) * | 2019-03-11 | 2021-01-26 | 京东方科技集团股份有限公司 | 显示面板及其制备方法 |
JP7289681B2 (ja) * | 2019-03-20 | 2023-06-12 | 株式会社ジャパンディスプレイ | 表示装置 |
US11610935B2 (en) * | 2019-03-29 | 2023-03-21 | Lumileds Llc | Fan-out light-emitting diode (LED) device substrate with embedded backplane, lighting system and method of manufacture |
US11637219B2 (en) | 2019-04-12 | 2023-04-25 | Google Llc | Monolithic integration of different light emitting structures on a same substrate |
CN109841710B (zh) * | 2019-04-12 | 2020-05-15 | 南京大学 | 用于透明显示的GaN Micro-LED阵列器件及其制备方法 |
US11551592B2 (en) | 2019-04-24 | 2023-01-10 | Hewlett-Packard Development Company, L.P. | Displays with pixels coupled by beam splitters |
US11710760B2 (en) | 2019-06-21 | 2023-07-25 | Semiconductor Energy Laboratory Co., Ltd. | Display device, display module, electronic device, and manufacturing method of display device |
JP2021012282A (ja) | 2019-07-05 | 2021-02-04 | 株式会社ジャパンディスプレイ | 表示装置 |
US11508700B2 (en) * | 2019-12-10 | 2022-11-22 | Meta Platforms Technologies, Llc | Left and right projectors for display device |
KR20210081512A (ko) | 2019-12-23 | 2021-07-02 | 삼성디스플레이 주식회사 | 표시 장치 및 제조 방법 |
CN111063270B (zh) * | 2019-12-30 | 2022-06-21 | 錼创显示科技股份有限公司 | 微型发光元件显示装置 |
KR20210089842A (ko) | 2020-01-09 | 2021-07-19 | 주식회사 엘지화학 | 마이크로 led 디스플레이 |
JP2023522583A (ja) | 2020-04-06 | 2023-05-31 | グーグル エルエルシー | バックプレーン及びディスプレイアセンブリ |
KR102194978B1 (ko) * | 2020-04-29 | 2020-12-24 | (주) 리가스텍 | 마이크로 디스플레이 장치 및 이를 제조하는 방법 |
KR20230004770A (ko) * | 2020-07-21 | 2023-01-06 | 엘지전자 주식회사 | 디스플레이 장치의 제조에 사용되는 전사 기판, 디스플레이 장치 및 디스플레이 장치의 제조 방법 |
US11830862B2 (en) | 2020-11-12 | 2023-11-28 | Excellence Opto. Inc. | Chip structure of micro light-emitting diode display |
CN112669715B (zh) * | 2020-12-24 | 2022-08-05 | 深圳市华星光电半导体显示技术有限公司 | 连接件、显示面板及其制作方法、显示装置 |
US11489008B2 (en) | 2021-02-23 | 2022-11-01 | Toyoda Gosei Co., Ltd. | Light-emitting device |
JP2022128556A (ja) * | 2021-02-23 | 2022-09-02 | 豊田合成株式会社 | マイクロledディスプレイ |
KR20240125558A (ko) * | 2021-12-14 | 2024-08-19 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | 발광 장치 및 전자 기기 |
KR102579242B1 (ko) | 2022-02-22 | 2023-09-18 | 한국에너지공과대학교 | 마이크로 led 표시 장치 및 마이크로 led 표시 장치 제조 방법 |
CN114627773B (zh) * | 2022-03-11 | 2024-02-20 | 武汉华星光电半导体显示技术有限公司 | 拼接显示面板 |
WO2023244693A1 (en) * | 2022-06-15 | 2023-12-21 | Lumileds Llc | Vehicular sparse led arrays |
KR102669051B1 (ko) | 2023-02-21 | 2024-05-24 | 웨이브로드 주식회사 | 수직 적층형 마이크로디스플레이 패널 제조 방법 |
KR102669057B1 (ko) | 2023-02-07 | 2024-05-24 | 웨이브로드 주식회사 | 반사체가 적용된 마이크로디스플레이 패널 제조 방법 |
KR102607680B1 (ko) | 2023-02-07 | 2023-11-29 | 웨이브로드 주식회사 | 마이크로디스플레이 패널 제조 방법 |
KR102712126B1 (ko) | 2023-02-21 | 2024-09-30 | 웨이브로드 주식회사 | 마이크로디스플레이 패널 제조 방법 |
WO2024167247A1 (ko) * | 2023-02-07 | 2024-08-15 | 웨이브로드 주식회사 | 마이크로디스플레이 패널 제조 방법 |
KR102668094B1 (ko) | 2023-03-13 | 2024-05-22 | 웨이브로드 주식회사 | 칼라필터가 불필요한 수직 적층형 마이크로디스플레이 패널 및 그 제조 방법 |
Family Cites Families (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS537278B2 (ja) * | 1973-07-17 | 1978-03-16 | ||
JP3195720B2 (ja) * | 1994-12-20 | 2001-08-06 | シャープ株式会社 | 多色led素子およびその多色led素子を用いたled表示装置、並びに多色led素子の製造方法 |
JP3976812B2 (ja) * | 1995-03-09 | 2007-09-19 | セイコーエプソン株式会社 | 偏光照明装置および投写型表示装置 |
US5621225A (en) * | 1996-01-18 | 1997-04-15 | Motorola | Light emitting diode display package |
JP2001044502A (ja) * | 1999-07-28 | 2001-02-16 | Matsushita Electronics Industry Corp | 複合発光素子及びその製造方法 |
US6486499B1 (en) * | 1999-12-22 | 2002-11-26 | Lumileds Lighting U.S., Llc | III-nitride light-emitting device with increased light generating capability |
JP2001326388A (ja) * | 2000-05-12 | 2001-11-22 | Rohm Co Ltd | 半導体発光装置 |
JP2001343706A (ja) * | 2000-05-31 | 2001-12-14 | Sony Corp | 映像表示装置 |
JP3906653B2 (ja) * | 2000-07-18 | 2007-04-18 | ソニー株式会社 | 画像表示装置及びその製造方法 |
KR100470904B1 (ko) | 2002-07-20 | 2005-03-10 | 주식회사 비첼 | 고휘도 질화물 마이크로 발광 다이오드 및 그 제조방법 |
JP2004055944A (ja) * | 2002-07-23 | 2004-02-19 | Matsushita Electric Ind Co Ltd | 半導体発光装置の製造方法 |
JP2004079972A (ja) * | 2002-08-22 | 2004-03-11 | Fuji Photo Film Co Ltd | 面発光型発光素子 |
JP2005079385A (ja) * | 2003-09-01 | 2005-03-24 | Toshiba Corp | 光半導体装置および光信号入出力装置 |
US7285801B2 (en) * | 2004-04-02 | 2007-10-23 | Lumination, Llc | LED with series-connected monolithically integrated mesas |
JP2006073618A (ja) * | 2004-08-31 | 2006-03-16 | Toyoda Gosei Co Ltd | 光学素子およびその製造方法 |
JP2006012916A (ja) * | 2004-06-22 | 2006-01-12 | Toyoda Gosei Co Ltd | 発光素子 |
JP2007324583A (ja) * | 2006-05-01 | 2007-12-13 | Mitsubishi Chemicals Corp | 集積型半導体発光装置およびその製造方法 |
JP2010192802A (ja) * | 2009-02-20 | 2010-09-02 | Sony Corp | 実装基板および表示装置 |
WO2011008747A2 (en) | 2009-07-15 | 2011-01-20 | Cardiac Pacemakers, Inc. | Remote sensing in an implantable medical device |
JP2011113989A (ja) * | 2009-11-24 | 2011-06-09 | Oki Data Corp | 表示パネル及び投射型表示装置 |
US8642363B2 (en) * | 2009-12-09 | 2014-02-04 | Nano And Advanced Materials Institute Limited | Monolithic full-color LED micro-display on an active matrix panel manufactured using flip-chip technology |
WO2011071559A1 (en) * | 2009-12-09 | 2011-06-16 | Nano And Advanced Materials Institute Limited | Method for manufacturing a monolithic led micro-display on an active matrix panel using flip-chip technology and display apparatus having the monolithic led micro-display |
KR101666442B1 (ko) * | 2010-03-25 | 2016-10-17 | 엘지이노텍 주식회사 | 발광 다이오드 및 이를 포함하는 발광 소자 패키지 |
KR101150861B1 (ko) | 2010-08-16 | 2012-06-13 | 한국광기술원 | 멀티셀 구조를 갖는 발광다이오드 및 그 제조방법 |
WO2013086046A1 (en) * | 2011-12-06 | 2013-06-13 | Ostendo Technologies, Inc. | Spatio-optical and temporal spatio-optical directional light modulators |
DE102011056888A1 (de) * | 2011-12-22 | 2013-06-27 | Osram Opto Semiconductors Gmbh | Anzeigevorrichtung und Verfahren zur Herstellung einer Anzeigevorrichtung |
JP2013179215A (ja) * | 2012-02-29 | 2013-09-09 | Toyohashi Univ Of Technology | Ledアレイ及び光電子集積装置 |
DE102012217957B4 (de) * | 2012-10-01 | 2014-10-09 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung einer Mikro-LED-Matrix |
US9159700B2 (en) * | 2012-12-10 | 2015-10-13 | LuxVue Technology Corporation | Active matrix emissive micro LED display |
CN103456729B (zh) * | 2013-07-26 | 2016-09-21 | 利亚德光电股份有限公司 | 发光二极管显示屏 |
WO2015095614A1 (en) * | 2013-12-18 | 2015-06-25 | Leupold & Stevens, Inc. | Micro-pixelated led reticle display for optical aiming devices |
US9207904B2 (en) * | 2013-12-31 | 2015-12-08 | Ultravision Technologies, Llc | Multi-panel display with hot swappable display panels and methods of servicing thereof |
US9831387B2 (en) * | 2014-06-14 | 2017-11-28 | Hiphoton Co., Ltd. | Light engine array |
FR3023065B1 (fr) * | 2014-06-27 | 2017-12-15 | Commissariat Energie Atomique | Dispositif optoelectronique a jonction p-n permettant une ionisation de dopants par effet de champ |
KR20160027730A (ko) * | 2014-09-02 | 2016-03-10 | 서울바이오시스 주식회사 | 발광 다이오드 |
GB201420452D0 (en) * | 2014-11-18 | 2014-12-31 | Mled Ltd | Integrated colour led micro-display |
KR102617466B1 (ko) * | 2016-07-18 | 2023-12-26 | 주식회사 루멘스 | 마이크로 led 어레이 디스플레이 장치 |
EP3561870A4 (en) * | 2016-12-23 | 2020-11-25 | Lumens Co., Ltd. | MICRO-LED MODULE AND ITS MANUFACTURING PROCESS |
JP6366799B1 (ja) * | 2017-02-10 | 2018-08-01 | ルーメンス カンパニー リミテッド | マイクロledモジュール及びその製造方法 |
KR102399464B1 (ko) * | 2017-06-27 | 2022-05-19 | 주식회사 루멘스 | 엘이디 패널 |
-
2016
- 2016-07-18 KR KR1020160090600A patent/KR102617466B1/ko active IP Right Grant
- 2016-09-23 JP JP2016185382A patent/JP6131374B1/ja active Active
-
2017
- 2017-04-17 JP JP2017081498A patent/JP6445075B2/ja active Active
- 2017-05-23 CN CN201780042188.8A patent/CN109479354B/zh active Active
- 2017-05-23 EP EP17831202.1A patent/EP3487266B1/en active Active
- 2017-05-23 WO PCT/KR2017/005354 patent/WO2018016728A1/ko unknown
- 2017-05-31 TW TW106117896A patent/TW201804608A/zh unknown
- 2017-06-04 US US15/613,233 patent/US10062675B2/en active Active
-
2018
- 2018-07-26 US US16/046,176 patent/US10607973B2/en active Active
- 2018-07-26 US US16/046,161 patent/US10784241B2/en active Active
- 2018-11-28 JP JP2018222671A patent/JP6722262B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
EP3487266A1 (en) | 2019-05-22 |
US10784241B2 (en) | 2020-09-22 |
JP2018014481A (ja) | 2018-01-25 |
JP2018014475A (ja) | 2018-01-25 |
US20180019233A1 (en) | 2018-01-18 |
US10607973B2 (en) | 2020-03-31 |
CN109479354B (zh) | 2021-05-14 |
EP3487266B1 (en) | 2024-10-09 |
WO2018016728A1 (ko) | 2018-01-25 |
US10062675B2 (en) | 2018-08-28 |
TW201804608A (zh) | 2018-02-01 |
EP3487266A4 (en) | 2019-06-26 |
US20180331086A1 (en) | 2018-11-15 |
KR20180009116A (ko) | 2018-01-26 |
US20180331085A1 (en) | 2018-11-15 |
KR102617466B1 (ko) | 2023-12-26 |
JP2019068082A (ja) | 2019-04-25 |
JP6131374B1 (ja) | 2017-05-17 |
CN109479354A (zh) | 2019-03-15 |
JP6445075B2 (ja) | 2018-12-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6722262B2 (ja) | マイクロledアレイディスプレイ装置 | |
JP7387699B2 (ja) | ディスプレイ装置 | |
US10332949B2 (en) | Display apparatus | |
CN107924964B (zh) | 发光面板及制备此类发光面板的方法 | |
TWI529924B (zh) | 將電晶體晶圓接合至發光二極體晶圓以形成主動發光二極體模組 | |
US8642363B2 (en) | Monolithic full-color LED micro-display on an active matrix panel manufactured using flip-chip technology | |
TW201732770A (zh) | 具有積體薄膜電晶體電路之半導體裝置 | |
TWI689092B (zh) | 具有透光基材之微發光二極體顯示模組及其製造方法 | |
TW201947737A (zh) | 一種發光裝置及其製造方法 | |
JP2017529557A5 (ja) | ||
KR102519201B1 (ko) | 픽셀용 발광소자 및 엘이디 디스플레이 장치 | |
TW201904048A (zh) | 微發光二極體顯示模組及其製造方法 | |
KR102078643B1 (ko) | 원칩 타입의 발광 다이오드를 이용한 디스플레이 장치 및 그 제조 방법 | |
TW201904049A (zh) | 微發光二極體顯示模組的製造方法 | |
TWI548083B (zh) | 顯示裝置、顯示模組及其畫素結構 | |
TW202205659A (zh) | 具驅動ic的像素單元、包含該像素單元的發光裝置及其製法 | |
TWI650852B (zh) | 主動式驅動發光二極體陣列的製造方法 | |
TWI633681B (zh) | 微發光二極體顯示模組的製造方法 | |
KR20240105216A (ko) | 표시 장치 및 표시 장치의 제조 방법 | |
CN102456701B (zh) | 发光装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20181128 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20191029 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20191112 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200127 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200602 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200619 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6722262 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |