CN110574174B - 使用粘合剂对微结构进行传质 - Google Patents

使用粘合剂对微结构进行传质 Download PDF

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CN110574174B
CN110574174B CN201780086315.4A CN201780086315A CN110574174B CN 110574174 B CN110574174 B CN 110574174B CN 201780086315 A CN201780086315 A CN 201780086315A CN 110574174 B CN110574174 B CN 110574174B
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substrate
micro led
adhesive
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micro
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CN110574174A (zh
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庄永璋
张磊
欧放
李起鸣
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Hefei Xianyao Display Technology Co ltd
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Abstract

使用粘合剂实现微结构从一个基板到另一基板的传质。在集成微LED显示器的背景下，在原生基板上制造微LED阵列，而在单独的基板上制造相应的CMOS像素驱动器。微LED基板(例如，蓝宝石)和CMOS基板(例如，硅)可能不兼容。例如，它们可能具有不同的热膨胀系数，这使得难以将微LED接合到像素驱动器电路。通过使用粘合剂将微LED阵列转移到中间基板(例如，硅)。该中间基板可以用于将微LED阵列接合到像素驱动器阵列的过程中。通过释放粘合剂将中间基板与微LED阵列分离。

Description

使用粘合剂对微结构进行传质
相关申请的交叉引用
本申请根据35U.S.C.§119(e)要求于2016年12月13日提交的题为“Mass Transferof Micro Structures using Adhesives”的美国临时专利申请序列号62/433,741以及于2017年12月8日提交的题为“Mass Transfer of Micro Structures Using Adhesives”的美国实用新型专利申请号15/836,703的优先权。所有前述内容的主题通过引用整体并入本文。
技术领域
本公开一般涉及用于制造半导体器件的方法，该半导体器件包括集成多色微LED显示面板。
背景技术
结合薄膜晶体管(TFT)技术的有源矩阵液晶显示器(LCD)和有机发光二极管(OLED)显示器在当今的商业电子设备中正在变得日益普及。这些显示器广泛用于膝上型个人计算机、智能手机、以及个人数字助理。数百万像素一起在显示器上创建图像。TFT用作开关以单独打开和关闭每个像素，从而使像素变亮或变暗，这允许方便且有效地控制每个像素和整个显示器。
然而，传统LCD显示器遭受低光效率，导致高功耗和有限的电池操作时间。虽然有源矩阵有机发光二极管(AMOLED)显示面板通常比LCD面板消耗更少的功率，但是AMOLED显示面板仍然可以成为电池供电设备中的主要耗电装置。为了延长电池寿命，期望降低显示面板的功耗。
传统无机半导体发光二极管(LED)已经证明了优异的光效率，这使得对于电池供电的电子器件而言，有源矩阵LED显示器更加理想。驱动器电路和发光二极管(LED)阵列被用于控制数百万像素，以在显示器上呈现图像。单色显示面板和全色显示面板都可以根据多种制造方法制造。
然而，数千甚至数百万个微LED与像素驱动器电路阵列的集成非常具有挑战性。已经提出了各种制造方法。在一种途径中，在一个基板上制造控制电路，而在单独的基板上制造微LED。使用控制电路来拾取微LED并且将它们一次一个或几个地放置到基板上。然而，这种制造工艺效率低且成本高。
在另一途径中，使用金属接合将整个微LED阵列与其原始基板对准并且接合到控制电路。其上制造微LED的基板保留在最终产品中，这可能导致光串扰。附加地，两个不同基板之间的热失配在接合界面处生成应力，这可能导致可靠性问题。更进一步地，与单色显示面板相比较，多色显示面板通常需要更多的微LED和在不同基板材料上生长的不同颜色的微LED，因此使得传统制造工艺更加复杂和低效。
结果，需要更好的制造方法，其既用于微LED显示器，也用于具有微结构的其他类型的半导体器件。
发明内容
本公开通过使用粘合剂，将微结构的传质从一个基板提供到另一基板，以克服现有技术的限制。在集成微LED显示器的背景下，在原生基板上制造微LED阵列，而在单独的基板上制造相应的CMOS像素驱动器。微LED基板(例如，蓝宝石)和CMOS基板(例如，硅)可能不兼容。例如，它们可能具有不同的热膨胀系数，这使得难以将微LED接合到像素驱动器电路，同时二者仍然在它们的原始基板上。因此，通过使用粘合剂将微LED阵列转移到中间基板(例如，硅)。该中间基板可以被用于将微LED阵列接合到像素驱动器阵列的过程中。然后，通过释放粘合剂将中间基板与微LED阵列分离。
其他方面包括部件、设备、系统、改进、方法、过程、应用、计算机可读介质以及与上述中的任一项有关的其他技术。
附图说明
本公开的实施例具有其他优点和特征，当结合附图中的示例时，这些优点和特征从以下详细描述和所附权利要求变得更加显而易见，其中：
图1A是根据一个实施例的集成微LED显示器的像素的电路图。
图1B是根据一个实施例的具有像素驱动器阵列的CMOS管芯的横截面视图，该像素驱动器阵列在硅基板上制造。
图1C是根据一个实施例的具有微LED阵列的微LED管芯的横截面视图，该微LED阵列在蓝宝石基板上制造。
图2A至图2F是图示根据一个实施例的通过单翻转传质粘合剂工艺制造集成微LED显示面板的横截面视图。
图3A和图3B是最终基板上的微LED的显微图像。
图3C和图3D是微LED转移之后的载体基板的显微图像。
图4A至图4D是图示根据一个实施例的另一集成微LED显示面板的制造的横截面视图。
图5是根据一个实施例的示例性集成微LED显示面板的俯视图。
图6A至图6D是图示根据一个实施例的通过双翻转传质粘合剂工艺制造集成微LED显示面板的横截面视图。
图7是图示根据一个实施例的使用多个粘合剂层通过转移粘合剂工艺制造集成微LED显示面板的横截面视图。
图8A至图8B是图示根据一个实施例的通过双翻转传质粘合剂工艺制造另一种集成微LED显示面板的横截面视图。
图9A至图9C是图示根据一个实施例的通过另一传质粘合剂工艺制造集成微LED显示面板的横截面视图。
具体实施方式
附图和以下描述仅通过说明的方式涉及优选实施例。应当指出，从以下讨论中，在不背离所要求保护的原理的情况下，本文中所公开的结构和方法的备选实施例将被容易地认为是可行的备选方案。
以下示例主要使用集成微LED显示器，其中一个或多个GaN微LED阵列通过共晶接合附接到CMOS像素驱动器，但是这些仅是示例，并且所描述的技术不限于该特定应用。微LED的示例包括基于GaN的UV/蓝/绿微LED、基于AlInGaP的红/橙微LED、以及基于GaAs或InP的红外(IR)微LED。在题为“Semiconductor Devices with Integrated Thin-FilmTransistor Circuitry”的美国专利申号15/135,217、题为“Making SemiconductorDevices with Alignment Bonding and Substrate Removal”的15/269,954、题为“Display Panels with Integrated Micro Lens Array”15/269,956、题为“Manufacturing Display Panels with Integrated Micro Lens Array”的15/272,410以及题为“Multi-Color Micro-LED Array Light Source”的15/701,450中描述了微LED和其他微结构的附加示例。所有前述内容均通过引用整体并入本文。本文中所描述的概念还可以用于传质其他微结构和器件，诸如VCSEL(垂直腔表面发射激光器)、激光二极管、光电检测器、MEMS、以及功率器件。除了共晶接合之外，还可以使用具有浸渍在粘合剂中的导电颗粒的粘合剂来实现微LED与驱动器电路的导电接合。
图1A是根据一个实施例的集成微LED显示器的像素的电路图。像素包括像素驱动器和微LED 140。在该示例中，像素驱动器包括两个晶体管和一个电容器130，其中一个晶体管是控制晶体管120，而另一个晶体管是驱动晶体管110。通过将其栅极连接到扫描信号总线150、将其一个源极/漏极连接到数据信号总线170、而将另一个漏极/源极连接到存储电容器130并连接到驱动晶体管110的栅极，对控制晶体管120进行配置。驱动晶体管110的一个源极/漏极被连接到电压源Vdd，且另一个漏极/源极被连接到微LED 140的p电极。微LED140的n电极被连接到电容器130并且被连接到地。在该示例中，当扫描信号150打开控制晶体管120的栅极时，数据信号170对存储电容器130进行充电并且设置驱动晶体管110的栅极电压，其控制流过微LED 140的电流。本文中，存储电容器130用于维持驱动晶体管110的栅极电压，从而在扫描信号150正在设置其他像素的时间期间维持流过微LED 140的电流。
通常在一个基板上制造集成微LED显示器的像素驱动器，如图1B所示。在不同的基板上制造微LED，如图1C所示。通过将微LED与其对应的像素驱动器集成来创建集成微LED显示器，其如下所述，使用粘合剂和中间基板通过传质工艺来实现。
图1B是根据一个实施例的具有像素驱动器阵列的CMOS管芯的横截面视图，该像素驱动器阵列在硅基板上制造。在图1B中，在CMOS基板102上制造各个驱动器电路110的阵列。驱动器电路110用后缀R、G、B标记，因为它们对应于红色像素、绿色像素和蓝色像素。在该示例中，与图1A相比较，为了清楚起见，图1B中仅示出了每个像素驱动器电路的驱动晶体管110。驱动晶体管110是CMOS驱动器电路，其源极117连接到将接合到相应微LED的触点116。在未示出的备选实施例中，驱动器电路还可以是玻璃基板或柔性基板上的TFT电路。
为了清楚起见，图1B仅示出了用110R、110G和110B标记的六个驱动器电路110，其对应于红色微LED、绿色微LED和蓝色微LED，如下所述。应当理解，驱动器电路可以包括不同数量的驱动器电路。在完全可编程的显示面板中，微LED和驱动器电路以阵列布置，以形成可单独寻址的像素(优选地，彩色像素)的阵列。在备选实施例中，显示面板可以具有更有限的可编程性，并且像素可以以不同的几何形状布置。另外，驱动器电路和微LED之间不必一一对应。例如，可能有两个或更多个连接到相同的像素驱动器的微LED输出以产生冗余，因此如果微LED中的一个微LED发生故障，则剩余的微LED仍然可以点亮该像素。
返回图1B，驱动器电路110如下制造。CMOS基板102是其上制造有各个驱动器电路110的阵列的基板。在一个实施例中，基板102是Si基板。在另一实施例中，支撑基板102是透明基板，例如，玻璃基板。其他示例基板包括GaAs基板、GaP基板、InP基板、SiC基板、ZnO基板、蓝宝石基板、或柔性基板。
如下所述，驱动器电路110形成单独的像素驱动器以驱动将接合到驱动器电路的微LED。在图1B所示的示例中，驱动器电路110是CMOS驱动器电路，其包括源极117、漏极118和栅极119。源极117还被连接到与接合触点116接触的电极。漏极118经由Vdd触点115被连接到外部电压源。在备选实施例中，可以依据驱动器电路110R的沟道类型(例如，n沟道FET或p沟道FET)来切换漏极118R和源极117R的位置。
形成绝缘介电层113以将Vdd触点115、栅极119和电极与源极117电隔离。还在每个像素驱动器内形成接地触点114，相应的微LED将连接到该接地触点114。微LED在一侧接触接合触头116而在另一侧接触接地触头114。在未示出的备选实施例中，驱动器电路可以包括除CMOS驱动器电路之外的驱动器电路。作为一个示例，驱动器电路可以包括薄膜晶体管(TFT)驱动器电路。作为另一示例，驱动器电路可以使用III-V化合物半导体。
如下文更全面地描述的，在绝缘介电层113的顶部上为每个驱动器电路110形成接合触点116，以与相应的微LED的接合触点接触，使得驱动器电路110能够电耦合到微LED。接合触点116是欧姆触点，例如，金属触点。
图1C是具有在GaAs基板142R上制造的红色微LED 140R阵列的微LED管芯的横截面视图。在其他实施例中，微LED可以是蓝色微LED或绿色微LED，并且基板可以是蓝宝石基板、SiC基板或Si基板。微LED 140优选地为20微米或更小。在一个实施例中，微LED 140R以阵列布置在基板142R上，以在微LED集成到图1B中所示的CMOS管芯上之后，形成具有可单独寻址的像素的完全可编程的显示面板。为了清楚起见，图1C仅示出了在基板142R上制造的两个微LED 140R。应当理解，微LED管芯可以包括不同数量的微LED，并且可以使用多个管芯，例如，用于红色微LED、绿色微LED、以及蓝色微LED的不同管芯。
微LED 140R外延生长在基板142R上。形成钝化层143R以电隔离微LED管芯上的各个微LED 140R，并且在微LED的顶部上形成接合层，在这种情况下，对于微LED中的每个微LED，形成接合触点146R以电气耦合到如上文在图1B中描述的相应的驱动器电路110R。
在图1C中，微LED 140R是红色微LED。在未示出的备选实施例中，包括覆盖有磷光体层或纳米颗粒的紫外(UV)微LED的微LED管芯还可以被用于形成全色微LED显示器。还可以制造单色微LED显示面板。可替代地，具有不同颜色磷光体或纳米颗粒的相同颜色的微LED可以用来制造多色显示器。
微LED通常具有一对触点，一个触点用于微LED的p层，一个触点用于n层。在图1C的实施例中，经由接合工艺仅连接该对中的一个触点。在该示例中，接合触点146被连接到微LED的p层。
图2A-2F至图9A-9C图示了用于将微LED阵列与像素驱动器阵列接合的各种示例。这些示例基于使用粘合剂将微LED阵列传质到中间基板。例如，微LED阵列可以被转移到载体基板，该载体基板与CMOS基板更热兼容。如果接合工艺发生在升高的温度下，则不同的热膨胀系数可以防止微LED和像素驱动器的阵列在由于未对齐或由不同热膨胀率引起的内部应力而仍然在其原生基板上时的接合。然而，通过首先将微LED阵列转移到中间基板可以克服这些问题，该中间基板具有更兼容的热膨胀系数。
例如，通常在硅基板上制造CMOS像素驱动器，但是可以在蓝宝石基板上生长基于GaN的微LED。硅和蓝宝石之间的热失配使得难以在转移收率可接受的情况下，将微LED阵列与像素驱动器阵列接合。相反，基于Ga的微LED可以首先被传质到中间硅基板，然后被接合到像素驱动器阵列。
图2A至图2F是图示根据一个实施例的通过单个翻转传质粘合剂工艺制造集成微LED显示面板的横截面视图。图2A示出了在原生蓝宝石基板242上制造的GaN微LED 240的阵列。微LED阵列240要附接到CMOS基板上的相应的像素驱动器阵列(参见图2E)。通过使用粘合剂将微LED阵列240传质到中间基板来实现转移。在该示例中，中间基板是硅，以将基板的热膨胀与CMOS电路匹配。
图2B至图2C图示了微LED阵列从原生蓝宝石基板242到硅载体基板250的转移。在图2B中，微LED阵列240和原生蓝宝石基板242通过粘合剂260附接到硅载体基板250。粘合剂的示例包括环氧基聚合物，诸如SU-8、苯并环丁烯(BCB)、聚酰亚胺、聚苯并恶唑(PBO)、硅树脂、或热释放涂层。粘合剂可以是光敏的，在这种情况下，用UV或其他照射固化粘合剂。可替代地，热处理可以用来固化粘合剂。本文中，载体基板是硅，但是蓝宝石基板、玻璃基板、陶瓷基板和聚合物基板是可以用于载体基板的其他示例材料。
在图2C中，从微LED阵列240移除原生蓝宝石基板242。在该示例中，通过激光照射实现基板移除。诸如湿法化学蚀刻、干法蚀刻或化学机械抛光(CMP)之类的其他技术可以用于基板移除工艺。对于诸如蓝宝石之类的透明基板上的GaN微LED，可以通过激光照射来完成基板移除。对于硅基板上的GaN微LED，可以通过CMP然后湿法化学蚀刻或干法蚀刻来完成基板移除。对于GaAs基板上的AlGaInP微LED，优选地，使用湿化学蚀刻来移除基板。在基板移除之后，LED 240之间的粘合剂260可以被凹陷蚀刻以暴露微LED的更多侧壁，从而在微LED之间的空间中提供更多间隙，并且在接合到像素驱动器管芯210之后，便于将微LED与粘合剂260和载体基板更容易地分离。
在图2D中，接合触点246被沉积在微LED 240上。在图2E中，这些接合触点246被接合到包括像素驱动器的管芯210上的相应的触点216。为了方便起见，该管芯将被称为CMOS管芯210。在该示例中，它使用硅基板。因为载体基板也是硅，所以两个基板在接合工艺的热循环期间以相同的速率膨胀和收缩。
在图2F中，通过释放粘合剂260将硅载体基板250与微LED阵列240分离。由于微LED240与周围粘合剂260之间的微弱接合，所以优选地使用机械剥离来将硅载体基板250和粘合剂260与微LED 240分离。为了确保微LED 240到CMOS管芯210的良好转移收率，微LED 240和粘合剂260之间的接合强度可以通过在它们之间插入低粘附层以及通过凹陷蚀刻粘合剂260以暴露微LED 240的整个侧壁以使它们之间的接触面积最小化来定制。还可以使用诸如激光照射、湿蚀刻或干蚀刻之类的其他技术来移除硅载体基板250和粘合剂260。在释放之后，可以移除保留在CMOS管芯210上的多余的粘合剂，例如，通过湿法蚀刻或干燥蚀刻。该器件现在包括接合到相应的像素驱动器的阵列的微LED 240的阵列。
从施主基板到受主基板的微LED的传质是有益的，因为许多微LED可以并行转移。本文中所描述的示例涉及管芯，但是应当理解，在管芯从晶片分割之前，这些技术可以容易地以晶片级应用于管芯。
图3A至图3D示出了转移到载体基板和受体基板上的微LED阵列的显微图像。图3A和图3B示出了在转移过程之后具有规则排列在顶部上的微LED的受主基板。图3C和图3D示出了微LED转移之后的载体基板。
图4A至图4D示出了图2A至图2F中所示的制造全色微LED显示器的过程的应用，该过程需要将红色微LED、绿色微LED和蓝色微LED多次传质到像素驱动器电路。图4A示出了对应于图2E的步骤处的器件。红色微LED 140R已经使用粘合剂260R从其原生基板转移到硅载体基板250R。已经将接合触点146R被添加到微LED 140R，并且整个器件已经被共晶接合到包含驱动器电路110R的CMOS管芯上的相应的接合触点116R。CMOS电路的基板102是硅。图4B示出了通过释放粘合剂260R移除硅载体基板250R之后的器件。
对绿色微LED和蓝色微LED重复该过程。图4C示出了绿色微LED 140G与CMOS管芯的附接。使用粘合剂260G已将绿色微LED 140G从其原生基板转移到硅载体基板250G。已经将接合触点246G添加到微LED 140G，并且阵列已经被共晶接合到包含驱动器电路110G的CMOS管芯上的相应的接合触点116G。
应当指出，在这种情况下，绿色微LED 140G之间必须存在空间以允许存在红色微LED 140R。如果粘合剂260G最初在绿色微LED 140G之间延伸，则可以蚀刻或以其他方式移除粘合剂260G以在绿色微LED 140G之间产生空间。更一般地，可以移除微LED 140G之间的材料，包括粘合剂和基板，以增加微LED 140G之间的区域中的垂直间隙。还可以在微LED140G和硅载体基板250G之间添加附加层，或者可以增加粘合剂260G的厚度以进一步增加硅载体基板250G上方的微LED 140G的高度。
图4D示出了在红色微LED、绿色微LED和蓝色微LED 140的集成之后的集成微LED显示器。
一旦红色微LED、绿色微LED、蓝色微LED被转移到像素驱动器管芯，就在微LED的顶部半导体层和像素驱动器管芯的公共电极之间形成电连接。图5是根据一个实施例的示例性微LED显示面板的俯视图。显示面板包括数据接口510、控制模块520和像素区域550。数据接口510接收定义要显示的图像的数据。该数据的一个或多个源和格式将依据应用而变化。控制模块520接收输入数据并且将其转换为适于驱动显示面板中的像素的形式。控制模块520可以包括数字逻辑和/或状态机，其用于从接收的格式转换为适合于像素区域550的格式；移位寄存器或其他类型的缓冲器和存储器，其用于存储和传送数据；数模转换器和电平移位器；以及扫描控制器，其包括时钟电路。
像素区域550包括像素阵列。像素包括与像素驱动器单片集成的微LED 534，例如，如上文或在以下附图中所描述的。在该示例中，显示面板是彩色RGB显示面板。它包括以列排列的红色像素、绿色像素和蓝色像素。列532R是红色像素，列532G是绿色像素，而列532B是蓝色像素。在每个像素内，微LED 534由像素驱动器控制。根据先前所示出的实施例，像素经由接地焊盘536接触电源电压(未示出)和地，并且还接触控制信号。尽管未在图5中示出，但是微LED的p电极和驱动晶体管的输出位于微LED 534的下方，并且它们通过接合金属电连接。根据先前所描述的各种实施例，进行微LED电流驱动信号连接(微LED的p电极和像素驱动器的输出之间)、接地连接(n电极和系统接地之间)、Vdd连接(像素驱动器的源极和系统Vdd之间)、以及与像素驱动器的栅极的控制信号连接。
图5仅仅是代表性的图。其他设计将是显而易见的。例如，颜色不必是红色、绿色和蓝色，并且每个颜色像素的数量不必相等。它们也不必以列或条带布置。例如，一组四个颜色像素可以被布置为2×2平方。作为一个示例，除了图5中所示的像素的矩形矩阵的布置之外，还可以使用六边形像素矩阵的布置来形成显示面板。
在一些应用中，不需要完全可编程的像素矩阵列。具有多种形状和显示器的显示面板的其他设计还可以使用本文中所描述的器件结构形成。一类示例是专门应用，包括标牌和汽车。例如，多个像素可以以星形或螺旋形布置以形成显示面板，并且可以通过打开和关闭微LED来产生显示面板上的不同图案。另一专门示例是汽车前灯和智能照明，其中某些像素被分组在一起以形成各种照明形状，并且每组微LED像素可以通过各个像素驱动器打开或关闭或以其他方式调整。
可以制造不同类型的显示面板。例如，显示面板的分辨率的范围通常可以在8x8到4096x2160的范围内。常见的显示器分辨率包括分辨率为320x240且宽高比为4:3的QVGA、分辨率为1024x768且宽高比为4:3的XGA、分辨率为1280x720且宽高比为16:9的HD、分辨率为1920x1080且宽高比为16:9的FHD、分辨率为3840x2160且宽高比为16:9的UHD、以及分辨率为4096x2160的4K。还可以有多种多样的像素尺寸，范围从亚微米及以下至10毫米及以上。整个显示区域的大小也可以广泛变化，范围从小到几十微米或更小的对角线至大到几百英寸或更大的对角线。
不同的应用对光学亮度也有不同要求。示例应用包括直视型显示屏，用于家庭/办公室投影仪的光引擎，以及诸如智能电话、膝上型计算机、可穿戴式电子设备和视网膜投影之类的便携式电子器件。功耗可以从低至视网膜投影仪的几毫瓦变化至高至大屏幕户外显示器、投影仪和智能汽车前灯的几千瓦。在帧速率方面，由于无机微LED的快速响应(纳秒)，帧速率可以高达KHz，对于小分辨率甚至高达MHz。
图2A-2F的示例是“单转移”或“单翻转”过程。微LED阵列一次转移到载体基板，其中LED的方位在转移期间翻转。对于LED工业中最广泛使用的外延晶片，顶部外延层是p型半导体，诸如用于蓝色LED/绿色LED的p-GaN和用于红色LED的p-GaP。在利用粘合剂单转移到载体基板的过程并且移除外延基板之后，微LED的极性使用作为n型半导体的顶部外延层翻转。然而，可以重复转移过程以控制微LED顶部表面的极性。图6A至图6D是“双转移”或“双翻转”过程的示例。在图6A中，微LED阵列640已经使用粘合剂661转移到第一载体基板651。不是将微LED附接到CMOS管芯，而是将其转移到第二载体基板652，然后附接到CMOS管芯，如图6B至图6D所示。这可能是因为微LED 640在图6A中未正确定向。也就是说，微LED 640的未暴露侧可以是要接合到CMOS管芯的一侧。因此，在接合之前将微LED 640翻转一次以重新定向它们。
在图6B中，使用附加粘合剂662将微LED阵列和载体基板651附接到第二载体基板652。如图6C所示，第一载体基板651通过释放粘合剂661与微LED阵列分离，从而留下由第二载体基板652支撑的微LED阵列640。应当指出，与图6A中的方位相比较，图6C中的微LED阵列倒置。
如图6D所示，添加接合触点646，并且由基板652支撑的微LED阵列被接合到CMOS管芯610上的相应的触点616。然后，通过释放粘合剂662，载体基板652与微LED阵列640分离。在图6D中，与图2F的单翻转过程中的微LED 240相比较，微LED 640被“倒置”。
图7示出了粘合剂具有两个层761和762的示例。例如，这些粘合剂可以是两种不同的粘合剂。这可以用于便于载体基板750从微LED阵列640和CMOS管芯710分离。例如，两个粘合剂层761，762之间的界面可以被设计为便于分离。可替代地，如果粘合剂层762不适用于这些技术，则粘合剂层761可以便于选择性的湿法蚀刻或激光照射。然后，可以通过例如干法蚀刻来移除残留的粘合剂层762。
图8A至图8B示出了微LED在传质时，具有附加结构的微LED的示例。在图8A中，已经形成了到微LED 840的p电极和n电极，同时微LED仍然由原生蓝宝石基板842支撑。具有电极的微LED阵列840使用先前所描述的双翻转工艺被转移到硅载体基板850。结果如图8B所示。然后，这可以被接合到CMOS管芯上。可替代地，可以使用具有导电颗粒的粘合剂将其附着到CMOS管芯，该导电颗粒在微LED电极和CMOS管芯上的相应的器件之间形成电连接。
图9A至图9C示出了并非所有微LED一次释放的示例。图9A示出了在使用粘合剂960转移到硅载体基板950之后的微LED阵列940。已经沉积了接合触点946。这与图2D中的结构类似。然而，如图9B和图9C所示，仅将每个第三个微LED 940被接合到CMOS管芯910。在该工艺之后，硅载体基板950包含附加微LED 940，该附加微LED 940然后可以被接合到其他CMOS管芯。
尽管具体实施方式包含许多细节，但是这些细节不应被解释为限制本发明的范围，而仅仅说明不同示例。应当领会，本公开的范围包括上文未详细讨论的其他实施例。例如，接合焊盘金属可以是Au/Sn、Au/In或In/Pd。作为另一示例，可以在CMOS管芯910和红色微LED、绿色微LED和蓝色微LED模板上布置接合焊盘(图9A)，使得仅红色模板/绿色模板/蓝色模板上的红色微LED/绿色微LED/蓝色微LED的选定部分接合到它们指定的红色像素/绿色像素/蓝色像素。同一模板上的其余微LED不会接合到CMOS管芯910上的任何焊盘。在不背离所附权利要求限定的精神和范围的情况下，可以在本文中所公开的方法和装置的布置、操作和细节方面做出对于本领域技术人员而言显而易见的各种其他修改、改变和变化。因此，本发明的范围应由所附权利要求及其合法等同物确定。

Claims (18)

1.一种用于制造集成微LED显示器的方法，包括：
对于包括微LED阵列的两个或多个微LED管芯中的每个微LED管芯，将所述微LED阵列附接到CMOS管芯，所述微LED阵列被制造在第一基板上，所述CMOS管芯包括在CMOS基板上制造的相应像素驱动器的阵列，其中将所述微LED阵列附接到所述CMOS管芯包括：
通过使用粘合剂将所述微LED阵列转移到第二基板，包括将所述第一基板与所述微LED阵列分离，所述微LED阵列由所述第二基板支撑，其中每个微LED具有接合金属焊盘，并且与所述微LED中的一个微LED对应的每个所述像素驱动器也具有接合金属焊盘；
将由所述第二基板支撑的所述微LED阵列的所述接合金属焊盘与所述像素驱动器的阵列的相应的所述接合金属焊盘对齐并接合，其中在所述对齐并接合步骤期间，所述微LED阵列具有高于所述第二基板的突出高度，所述突出高度足够为先前被接合到所述CMOS管芯的其他微LED阵列提供间隙；以及
通过在对齐并接合下一个微LED阵列之前释放所述粘合剂来移除所述第二基板。
2.根据权利要求1所述的方法，其中所述接合发生在升高的温度下，所述第一基板和所述CMOS基板由于不同的热膨胀系数而对于在所述升高的温度下的结合而言不兼容，而所述第二基板和所述CMOS基板具有对于在所述升高的温度下的接合而言兼容的热膨胀系数。
3.根据权利要求1所述的方法，其中所述第一基板是以下各项中的一项：蓝宝石基板、硅基板、GaAs基板、以及SiC基板；并且所述第二基板是以下各项中的一项：蓝宝石基板、硅基板、玻璃基板、陶瓷基板、以及聚合物基板。
4.根据权利要求1所述的方法，其中所述粘合剂是以下各项中的一项：SU-8涂层、苯并环丁烯(BCB)涂层、聚酰亚胺涂层、聚苯并恶唑(PBO)涂层、硅氧烷涂层、或热释放涂层。
5.根据权利要求1所述的方法，其中通过使用所述粘合剂将所述微LED阵列转移到所述第二基板包括：热处理或UV照射以固化所述粘合剂。
6.根据权利要求1所述的方法，其中通过释放所述粘合剂来移除所述第二基板包括以下各项中的至少一项：激光照射、湿法蚀刻所述粘合剂、干法蚀刻所述粘合剂、热处理、以及机械剥离，以释放所述粘合剂。
7.根据权利要求1所述的方法，其中通过释放所述粘合剂来移除所述第二基板包括：机械剥离以释放所述粘合剂，其中在所述微LED和所述粘合剂之间插入粘合控制层，以促进所述微LED与所述粘合剂的机械剥离。
8.根据权利要求1所述的方法，还包括：
在已经通过释放所述粘合剂移除所述第二基板之后，移除多余的粘合剂。
9.根据权利要求8所述的方法，其中移除多余的粘合剂包括：湿法蚀刻或干法蚀刻以移除多余的粘合剂。
10.根据权利要求1所述的方法，其中所述粘合剂包括两个粘合剂层，并且通过释放所述粘合剂来移除所述第二基板包括：释放所述两个粘合剂层中更靠近所述第二基板的一个粘合剂层。
11.根据权利要求1所述的方法，其中通过使用所述粘合剂将所述微LED阵列转移到所述第二基板包括：
通过使用所述粘合剂将由所述第一基板支撑的所述微LED阵列附接到所述第二基板；以及
将所述第一基板与所述微LED阵列分离，同时将所述微LED阵列附接到所述第二基板。
12.根据权利要求1所述的方法，其中通过使用所述粘合剂将所述微LED阵列转移到所述第二基板包括：
将由所述第一基板支撑的所述微LED阵列附接到中间基板；
将所述第一基板与所述微LED阵列分离，同时将所述微LED阵列附接到所述中间基板；
通过使用所述粘合剂将由所述中间基板支撑的所述微LED阵列附接到所述第二基板；以及
将所述中间基板与所述微LED阵列分离，同时将所述微LED阵列附接到所述第二基板。
13.根据权利要求1所述的方法，还包括：
在所述微LED阵列由所述第二基板支撑的同时，移除所述微LED阵列外部的区域中的粘合剂，以增加所述微LED阵列在所述第二基板上方的所述突出高度以为先前被接合到所述CMOS管芯的所述其他微LED阵列提供间隙。
14.根据权利要求1所述的方法，其中通过使用所述粘合剂将所述微LED阵列转移到所述第二基板包括：在所述微LED阵列和所述第二基板之间使用一个或多个附加层以增加所述微LED阵列在所述第二基板上方的所述突出高度以为先前被接合到所述CMOS管芯的所述其他微LED阵列提供间隙。
15.根据权利要求1所述的方法，其中所述微LED管芯包含多个微LED阵列，并且每个微LED阵列单独地被附接到不同的CMOS管芯。
16.根据权利要求1所述的方法，其中在从晶片分割单个管芯之前，在晶片级执行所述方法。
17.根据权利要求1所述的方法，其中将所述微LED阵列接合到所述像素驱动器的阵列包括：共晶接合或导电接合。
18.根据权利要求1所述的方法，其中所述微LED管芯包括到所述微LED阵列的触点，并且通过使用所述粘合剂将所述微LED阵列转移到所述第二基板包括：通过使用所述粘合剂将所述微LED阵列与所述触点一起转移到所述第二基板。
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Families Citing this family (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10978530B2 (en) 2016-11-25 2021-04-13 Vuereal Inc. Integration of microdevices into system substrate
US10916523B2 (en) 2016-11-25 2021-02-09 Vuereal Inc. Microdevice transfer setup and integration of micro-devices into system substrate
US10998352B2 (en) 2016-11-25 2021-05-04 Vuereal Inc. Integration of microdevices into system substrate
TWI624929B (zh) * 2016-12-02 2018-05-21 英屬開曼群島商錼創科技股份有限公司 顯示器的製作方法
KR102318335B1 (ko) * 2017-04-13 2021-10-28 제이드 버드 디스플레이(상하이) 리미티드 Led-oled 하이브리드 자체-발광 디스플레이
US20190044023A1 (en) * 2017-08-01 2019-02-07 Innolux Corporation Methods for manufacturing semiconductor device
US20190043843A1 (en) * 2017-08-01 2019-02-07 Innolux Corporation Methods for manufacturing a display device
US10707266B2 (en) * 2017-11-23 2020-07-07 Century Micro Display Technology (Shenzhen) Co., Ltd. Micro LED display panel with double-sides display
US11348968B2 (en) * 2018-01-02 2022-05-31 Hongyu Liu Display device structure
US10984708B1 (en) * 2018-03-30 2021-04-20 Facebook Technologies, Llc Manufacture LED displays using temporary carriers
US10998215B2 (en) * 2018-06-27 2021-05-04 Facebook Technologies, Llc Monitoring dry-etching of polymer layer for transferring semiconductor devices
TWI679627B (zh) * 2018-06-28 2019-12-11 友達光電股份有限公司 顯示裝置
CN108807265B (zh) * 2018-07-09 2020-01-31 厦门乾照光电股份有限公司 Micro-LED巨量转移方法、显示装置及制作方法
KR102597018B1 (ko) 2018-08-23 2023-10-31 엘지디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법
US11056611B2 (en) 2018-09-11 2021-07-06 Facebook Technologies, Llc Mesa formation for wafer-to-wafer bonding
US11342479B2 (en) 2018-09-11 2022-05-24 Facebook Technologies, Llc Reducing bowing of materials before wafer-to-wafer bonding for LED manufacturing
US11145786B2 (en) 2018-09-11 2021-10-12 Facebook Technologies, Llc Methods for wafer-to-wafer bonding
CN110911285B (zh) * 2018-09-14 2021-07-27 东莞市中麒光电技术有限公司 一种led芯片固定于背板的方法
KR102533666B1 (ko) * 2018-09-14 2023-05-17 삼성전자주식회사 디스플레이 패널 및 이를 포함하는 디스플레이 장치
CN109300931B (zh) * 2018-09-30 2021-02-26 上海天马微电子有限公司 一种Micro LED显示面板及制作方法、显示装置
CN109273387B (zh) * 2018-10-16 2019-05-24 广东工业大学 一种可变间距的电子元件巨量转移装置与方法
US10964581B1 (en) * 2018-10-18 2021-03-30 Facebook Technologies, Llc Self-aligned adhesive layer formation in light-emitting structure fabrication
KR102590984B1 (ko) * 2018-10-30 2023-10-18 삼성디스플레이 주식회사 발광 소자 구조물 및 발광 소자의 제조방법
CN111129235B (zh) * 2018-10-31 2021-10-22 成都辰显光电有限公司 一种微元件的批量转移方法
JP7237536B2 (ja) * 2018-11-12 2023-03-13 株式会社ジャパンディスプレイ 表示装置
CN109661163B (zh) * 2018-12-20 2019-08-13 广东工业大学 一种温控粘附式Micro-LED巨量转移方法
JP7348520B2 (ja) * 2018-12-25 2023-09-21 日亜化学工業株式会社 発光装置及び表示装置
WO2020142208A1 (en) 2019-01-02 2020-07-09 Lumiode, Inc. System and method of fabricating display structures
CN109461386B (zh) * 2019-01-04 2024-09-10 京东方科技集团股份有限公司 显示装置
KR102626452B1 (ko) * 2019-01-15 2024-01-18 삼성디스플레이 주식회사 발광 소자의 제조방법 및 발광 소자를 포함하는 표시 장치
CN109904174B (zh) 2019-02-28 2021-01-08 京东方科技集团股份有限公司 一种显示面板的电路背板及其制备方法和显示面板
CN109786421B (zh) * 2019-02-28 2020-08-18 京东方科技集团股份有限公司 一种显示装置、显示背板及制作方法
JP7271246B2 (ja) * 2019-03-19 2023-05-11 株式会社ジャパンディスプレイ 表示装置
CN110088886B (zh) * 2019-03-20 2022-09-09 京东方科技集团股份有限公司 微发光二极管转移设备、转移微发光二极管的方法、显示设备
CN109887461B (zh) * 2019-03-29 2020-12-25 京东方科技集团股份有限公司 一种显示装置及显示方法
US10903267B2 (en) * 2019-04-04 2021-01-26 Bor-Jen Wu System and method for making micro LED display
JP7333192B2 (ja) * 2019-04-23 2023-08-24 株式会社ディスコ 移設方法
CN109994579B (zh) * 2019-04-30 2020-12-25 成都辰显光电有限公司 微型led显示面板的制备方法和微型led显示面板
CN110112148A (zh) * 2019-05-20 2019-08-09 京东方科技集团股份有限公司 发光二极管模组及其制造方法、显示装置
JP7199307B2 (ja) * 2019-05-24 2023-01-05 株式会社ディスコ 移設方法
US11764343B2 (en) 2019-05-31 2023-09-19 Boe Technology Group Co., Ltd. Display backboard and manufacturing method thereof and display device
CN112313806B (zh) 2019-05-31 2023-02-10 京东方科技集团股份有限公司 显示背板及制作方法、显示面板及制作方法、显示装置
KR20200142685A (ko) 2019-06-13 2020-12-23 삼성전자주식회사 마이크로 led 전사 방법 및 이에 의해 제조된 디스플레이 모듈
CN118231534A (zh) 2019-06-13 2024-06-21 京东方科技集团股份有限公司 微型发光二极管的巨量转移方法及系统
CN110224002A (zh) 2019-06-18 2019-09-10 京东方科技集团股份有限公司 一种microLED面板制备方法及制备设备
DE20825423T1 (de) 2019-06-19 2023-11-09 Jade Bird Display (shanghai) Limited Systeme und Verfahren für koaxiale mehrfarbige LED
CN110265522B (zh) * 2019-06-28 2021-01-08 上海天马微电子有限公司 显示面板、显示装置和显示面板的制造方法
DE102019118270B4 (de) * 2019-07-05 2021-10-07 X-Fab Semiconductor Foundries Gmbh Verfahren zur Herstellung von Halbleiterbauelementen zur Ausbeutesteigerung beim Mikrotransferdruck
KR20210007705A (ko) 2019-07-12 2021-01-20 삼성전자주식회사 Led 전사 방법 및 이에 의해 제조된 디스플레이 모듈
EP4006977A4 (en) * 2019-07-26 2023-04-12 LG Electronics Inc. METHOD FOR MANUFACTURING A DISPLAY DEVICE USING A SEMICONDUCTOR ELECTROLUMINESCENT DEVICE
US11600747B2 (en) 2019-08-16 2023-03-07 Boe Technology Group Co., Ltd. Display backplane and method of manufacturing the same, display device
KR20210023375A (ko) 2019-08-23 2021-03-04 삼성전자주식회사 레이저 전사 장치 및 이를 이용한 전사 방법
CN110517595A (zh) * 2019-08-30 2019-11-29 京东方科技集团股份有限公司 一种透明显示面板及透明显示器
KR20210027848A (ko) * 2019-09-03 2021-03-11 삼성전자주식회사 마이크로 엘이디 디스플레이 및 이의 제작 방법
TWI727428B (zh) * 2019-09-20 2021-05-11 東貝光電科技股份有限公司 微型led面板之製造方法及其微型led面板
US20210151649A1 (en) * 2019-11-18 2021-05-20 Facebook Technologies, Llc Bonding of light emitting diode arrays
US11521887B2 (en) * 2019-12-18 2022-12-06 Seoul Viosys Co., Ltd. Method of transferring micro LED and micro LED transferring apparatus
TWI848035B (zh) * 2019-12-25 2024-07-11 南韓商樂金顯示科技股份有限公司 電子裝置及其製造方法
US11777066B2 (en) 2019-12-27 2023-10-03 Lumileds Llc Flipchip interconnected light-emitting diode package assembly
WO2021177646A1 (ko) * 2020-03-05 2021-09-10 삼성전자주식회사 디스플레이 모듈 및 디스플레이 모듈의 제조 방법
EP4118689A4 (en) * 2020-03-10 2024-01-17 Lumileds LLC METHOD FOR MANUFACTURING AN AUGMENTED LED ARRAY ASSEMBLY
KR102216369B1 (ko) * 2020-03-19 2021-02-17 (주)라이타이저 발포체와 감광성 수지를 이용한 led칩 전사 방법 및 장치, 이를 이용한 디스플레이 장치의 제조 방법
KR102364729B1 (ko) * 2020-04-29 2022-02-22 한국광기술원 마이크로 발광소자 전사방법
TWI747272B (zh) * 2020-05-08 2021-11-21 旭豐半導體股份有限公司 具有透紫外光基板的微芯片陣列光學組件製造方法及該組件
TWI794983B (zh) * 2020-05-08 2023-03-01 旭豐半導體股份有限公司 具有透紫外光基板的微芯片陣列光學組件製法及該組件
CN113629091A (zh) * 2020-05-08 2021-11-09 旭丰半导体股份有限公司 具有透紫外光基板的微芯片列阵光学组件制造方法及该组件
CN115989590A (zh) * 2020-05-18 2023-04-18 纳诺西斯有限公司 用于直视型显示器的次像素发光二极管及其制造方法
WO2021247894A1 (en) 2020-06-03 2021-12-09 Jade Bird Display (shanghai) Limited Systems and methods for multi-color led pixel unit with horizontal light emission
WO2021247887A1 (en) 2020-06-03 2021-12-09 Jade Bird Display (shanghai) Limited Systems and methods for multi-color led pixel unit with vertical light emission
TWI747327B (zh) * 2020-06-15 2021-11-21 吳伯仁 製造微發光二極體顯示器的系統與方法
CN112289908B (zh) * 2020-09-11 2022-08-02 罗化芯显示科技开发(江苏)有限公司 一种mini-LED芯片巨量转移的方法
US20220140217A1 (en) * 2020-10-30 2022-05-05 Raysolve Optoelectronics (Suzhou) Company Limited Light emitting diode structure and method for manufacturing the same
CN112466795A (zh) * 2020-11-10 2021-03-09 南昌大学 一种Micro LED巨量转移方法及转移衬底
WO2022147742A1 (en) * 2021-01-08 2022-07-14 Jade Bird Display (shanghai) Limited Systems and methods for led structures that increase current flow density
US11735573B2 (en) * 2021-01-22 2023-08-22 Jade Bird Display (shanghai) Limited Slicing micro-LED wafer and slicing micro-LED chip
US20220278255A1 (en) * 2021-03-01 2022-09-01 Apple Inc. Active / Passive Control of Micro LED Performance Through Sidewall Gating
US20220302339A1 (en) * 2021-03-16 2022-09-22 Applied Materials, Inc. Led transfer materials and processes
CN115458521A (zh) 2021-05-21 2022-12-09 联华电子股份有限公司 微发光二极管布局结构及其制作方法
DE102021116242A1 (de) 2021-06-23 2022-12-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement
CN113471339B (zh) * 2021-09-02 2021-11-09 罗化芯显示科技开发(江苏)有限公司 一种Micro-LED芯片的巨量转移方法
CN113793884A (zh) * 2021-09-15 2021-12-14 中国科学院苏州纳米技术与纳米仿生研究所 Mini-LED显示模组的制备方法
FR3128315A1 (fr) * 2021-10-15 2023-04-21 Aledia Procédé de report d’un dispositif optoélectronique

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003218402A (ja) * 2002-01-17 2003-07-31 Sony Corp 素子の配列方法及び画像表示装置の製造方法
CN101794848A (zh) * 2009-01-29 2010-08-04 索尼公司 转移装置的方法和制造显示设备的方法
CN105723528A (zh) * 2015-11-04 2016-06-29 歌尔声学股份有限公司 微发光二极管的转移方法、制造方法、装置和电子设备
CN106206872A (zh) * 2016-08-04 2016-12-07 南京大学 Si‑CMOS阵列驱动电路控制的GaN基可见光微米柱阵列LED器件及其制备方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010205943A (ja) * 2009-03-04 2010-09-16 Canon Inc 機能性領域の移設方法、ｌｅｄアレイ、ｌｅｄプリンタヘッド、及びｌｅｄプリンタ
CN102341740B (zh) * 2009-06-22 2015-09-16 财团法人工业技术研究院 发光单元阵列、其制造方法和投影设备
US8642363B2 (en) 2009-12-09 2014-02-04 Nano And Advanced Materials Institute Limited Monolithic full-color LED micro-display on an active matrix panel manufactured using flip-chip technology
CN102903804B (zh) 2011-07-25 2015-12-16 财团法人工业技术研究院 发光元件的转移方法以及发光元件阵列
TWI590498B (zh) * 2013-06-03 2017-07-01 財團法人工業技術研究院 電子元件的轉移方法及電子元件陣列
TWI603390B (zh) * 2013-07-29 2017-10-21 晶元光電股份有限公司 選擇性轉移半導體元件的方法
US9437782B2 (en) * 2014-06-18 2016-09-06 X-Celeprint Limited Micro assembled LED displays and lighting elements
US9698134B2 (en) * 2014-11-27 2017-07-04 Sct Technology, Ltd. Method for manufacturing a light emitted diode display
EP3207572B1 (en) * 2015-04-01 2019-06-05 Goertek. Inc Transferring method and manufacturing method of micro-led
WO2016183845A1 (en) * 2015-05-21 2016-11-24 Goertek.Inc Transferring method, manufacturing method, device and electronic apparatus of micro-led
US10068888B2 (en) 2015-12-21 2018-09-04 Hong Kong Beida Jade Bird Display Limited Making semiconductor devices with alignment bonding and substrate removal

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003218402A (ja) * 2002-01-17 2003-07-31 Sony Corp 素子の配列方法及び画像表示装置の製造方法
CN101794848A (zh) * 2009-01-29 2010-08-04 索尼公司 转移装置的方法和制造显示设备的方法
CN105723528A (zh) * 2015-11-04 2016-06-29 歌尔声学股份有限公司 微发光二极管的转移方法、制造方法、装置和电子设备
CN106206872A (zh) * 2016-08-04 2016-12-07 南京大学 Si‑CMOS阵列驱动电路控制的GaN基可见光微米柱阵列LED器件及其制备方法

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