SG11201906310VA - Mass transfer of micro structures using adhesives - Google Patents

Mass transfer of micro structures using adhesives

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Publication number
SG11201906310VA
SG11201906310VA SG11201906310VA SG11201906310VA SG11201906310VA SG 11201906310V A SG11201906310V A SG 11201906310VA SG 11201906310V A SG11201906310V A SG 11201906310VA SG 11201906310V A SG11201906310V A SG 11201906310VA SG 11201906310V A SG11201906310V A SG 11201906310VA
Authority
SG
Singapore
Prior art keywords
hong kong
substrate
micro led
center
international
Prior art date
Application number
SG11201906310VA
Inventor
Wing Chong
Lei Zhang
Fang Ou
Qiming Li
Original Assignee
Hong Kong Beida Jade Bird Display Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hong Kong Beida Jade Bird Display Ltd filed Critical Hong Kong Beida Jade Bird Display Ltd
Publication of SG11201906310VA publication Critical patent/SG11201906310VA/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/89—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using at least one connector not provided for in any of the groups H01L24/81 - H01L24/86
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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    • H01L24/93—Batch processes
    • H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
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    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
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    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
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    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68354—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
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    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
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    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Led Device Packages (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Led Devices (AREA)
  • Illuminated Signs And Luminous Advertising (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

SiliconSubstrate ''Adhesive 260 (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 21 June 2018 (21.06.2018) WI P0 I PC T ill mu °mons I SID o HE HE VIII ill Imo VII IE (10) International Publication Number WO 2018/111752 Al (51) International Patent Classification: H01L 33/08 (2010.01) HOlL 21/78 (2006.01) H01L 27/15 (2006.01) H01L 21/306 (2006.01) (21) International Application Number: PCT/US2017/065553 (22) International Filing Date: 11 December 2017 (11.12.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/433,741 13 December 2016 (13.12.2016) US 15/836,703 08 December 2017 (08.12.2017) US (71) Applicant: HONG KONG BEIDA JADE BIRD DIS- PLAY LIMITED [CN/CN]; Unit 7605, 76/F The Center, Queen's Rd Central, Hong Kong (CN). (72) Inventors; and (71) Applicants: CHONG, Wing, Cheung [ /CN]; c/o Hong Kong Beida Jade Bird Display Limited, Unit 7605, 76/F The Center, Queen's Rd Central, Hong Kong (CN). ZHANG, Lei [US/US]; c/o Hong Kong Beida Jade Bird Display Lim- ited, Unit 7605, 76/F The Center, Queen's Rd Central, Hong Kong (CN). OU, Fang [CN/US]; c/o Hong Kong Beida Jade Bird Display Limited, Unit 7605, 76/F The Center, Queen's Rd Central, Hong Kong (CN). LI, Qiming [CN/US]; c/o Hong Kong Beida Jade Bird Display Limited, Unit 7605, 76/F The Center, Queen's Rd Central, Hong Kong (CN). (74) Agent: FARN, Michael, W. et al.; Fenwick & West LLP, Silicon Valley Center, 801 Califorinia Street, Mountain View, CA 94041 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (54) Title: MASS TRANSFER OF MICRO STRUCTURES USING ADHESIVES Laser Sapphire Substrate 242 W O 20 18/ 11175 2 Al GaN Micro LED 240 FIG. 2C (57) : Mass transfer of micro structures are effected from one substrate to another using adhesives. In the context of an inte- grated micro LED display, a micro LED array is fabricated on a native substrate and corresponding CMOS pixel drivers are fabricated on a separate substrate. The micro LED substrate (e.g., sapphire) and the CMOS substrate (e.g., silicon) may be incompatible. For example, they may have different thermal coefficients of expansion which make it difficult to bond the micro LEDs to the pixel driver circuitry. The micro LED array is transferred to an intermediate substrate (e.g., silicon) by use of an adhesive. This intermediate sub- strate may be used in a process of bonding the micro LED array to the array of pixel drivers. The intermediate substrate is separated from the micro LED array by releasing the adhesive. [Continued on next page] WO 2018/111752 Al MIDEDIMOMBIMMIN311010HERIDIIMEMOIMIE (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))
SG11201906310VA 2016-12-13 2017-12-11 Mass transfer of micro structures using adhesives SG11201906310VA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662433741P 2016-12-13 2016-12-13
US15/836,703 US10325893B2 (en) 2016-12-13 2017-12-08 Mass transfer of micro structures using adhesives
PCT/US2017/065553 WO2018111752A1 (en) 2016-12-13 2017-12-11 Mass transfer of micro structures using adhesives

Publications (1)

Publication Number Publication Date
SG11201906310VA true SG11201906310VA (en) 2019-08-27

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SG11201906310VA SG11201906310VA (en) 2016-12-13 2017-12-11 Mass transfer of micro structures using adhesives

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Country Link
US (1) US10325893B2 (en)
EP (1) EP3555927B1 (en)
KR (1) KR102295569B1 (en)
CN (1) CN110574174B (en)
AU (1) AU2017375626B2 (en)
SG (1) SG11201906310VA (en)
TW (1) TWI774713B (en)
WO (1) WO2018111752A1 (en)

Families Citing this family (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10916523B2 (en) 2016-11-25 2021-02-09 Vuereal Inc. Microdevice transfer setup and integration of micro-devices into system substrate
US10978530B2 (en) * 2016-11-25 2021-04-13 Vuereal Inc. Integration of microdevices into system substrate
US10998352B2 (en) 2016-11-25 2021-05-04 Vuereal Inc. Integration of microdevices into system substrate
TWI624929B (en) * 2016-12-02 2018-05-21 英屬開曼群島商錼創科技股份有限公司 Manufacturing method of display
AU2018250698B2 (en) * 2017-04-13 2022-05-26 Jade Bird Display (Shang Hai) Limited LED-OLED hybrid self-emissive display
US20190044023A1 (en) * 2017-08-01 2019-02-07 Innolux Corporation Methods for manufacturing semiconductor device
US20190043843A1 (en) * 2017-08-01 2019-02-07 Innolux Corporation Methods for manufacturing a display device
TWI694430B (en) * 2017-11-23 2020-05-21 超微晶科技(深圳)有限公司 Micro-led display panel
CN110226229A (en) * 2018-01-02 2019-09-10 孙润光 A kind of display device structure
US10984708B1 (en) * 2018-03-30 2021-04-20 Facebook Technologies, Llc Manufacture LED displays using temporary carriers
US10998215B2 (en) * 2018-06-27 2021-05-04 Facebook Technologies, Llc Monitoring dry-etching of polymer layer for transferring semiconductor devices
TWI679627B (en) * 2018-06-28 2019-12-11 友達光電股份有限公司 Display panel
CN108807265B (en) * 2018-07-09 2020-01-31 厦门乾照光电股份有限公司 Micro-LED bulk transfer method, display device and manufacturing method
KR102597018B1 (en) * 2018-08-23 2023-10-31 엘지디스플레이 주식회사 Display device and method of manufacturing the same
US11145786B2 (en) 2018-09-11 2021-10-12 Facebook Technologies, Llc Methods for wafer-to-wafer bonding
US11056611B2 (en) 2018-09-11 2021-07-06 Facebook Technologies, Llc Mesa formation for wafer-to-wafer bonding
US11342479B2 (en) 2018-09-11 2022-05-24 Facebook Technologies, Llc Reducing bowing of materials before wafer-to-wafer bonding for LED manufacturing
CN110911285B (en) * 2018-09-14 2021-07-27 东莞市中麒光电技术有限公司 Method for fixing LED chip on backboard
KR102533666B1 (en) * 2018-09-14 2023-05-17 삼성전자주식회사 Display panel and display apparatus having the same
CN109300931B (en) * 2018-09-30 2021-02-26 上海天马微电子有限公司 Micro LED display panel, manufacturing method and display device
CN109273387B (en) * 2018-10-16 2019-05-24 广东工业大学 A kind of the electronic component flood tide transfer device and method of variable spacing
US10964581B1 (en) * 2018-10-18 2021-03-30 Facebook Technologies, Llc Self-aligned adhesive layer formation in light-emitting structure fabrication
KR102590984B1 (en) 2018-10-30 2023-10-18 삼성디스플레이 주식회사 Light emitting element structure and method of fabricating a light emitting element
CN111129235B (en) * 2018-10-31 2021-10-22 成都辰显光电有限公司 Batch transfer method of micro-elements
JP7237536B2 (en) * 2018-11-12 2023-03-13 株式会社ジャパンディスプレイ Display device
CN109661163B (en) * 2018-12-20 2019-08-13 广东工业大学 A kind of temperature control adhesive Micro-LED flood tide transfer method
JP7348520B2 (en) * 2018-12-25 2023-09-21 日亜化学工業株式会社 Light emitting device and display device
WO2020142208A1 (en) 2019-01-02 2020-07-09 Lumiode, Inc. System and method of fabricating display structures
CN109461386A (en) * 2019-01-04 2019-03-12 京东方科技集团股份有限公司 Display device
KR102626452B1 (en) * 2019-01-15 2024-01-18 삼성디스플레이 주식회사 Method for fabricating light emitting diode and display device comprising the light emitting diodes
CN109786421B (en) * 2019-02-28 2020-08-18 京东方科技集团股份有限公司 Display device, display back plate and manufacturing method
CN109904174B (en) * 2019-02-28 2021-01-08 京东方科技集团股份有限公司 Circuit backboard of display panel, preparation method of circuit backboard and display panel
JP7271246B2 (en) * 2019-03-19 2023-05-11 株式会社ジャパンディスプレイ Display device
US11107711B2 (en) * 2019-03-20 2021-08-31 Beijing Boe Display Technology Co., Ltd. Micro light emitting diode transferring apparatus, method for transferring micro light emitting diode, and display apparatus
CN109887461B (en) * 2019-03-29 2020-12-25 京东方科技集团股份有限公司 Display device and display method
US10903267B2 (en) * 2019-04-04 2021-01-26 Bor-Jen Wu System and method for making micro LED display
JP7333192B2 (en) * 2019-04-23 2023-08-24 株式会社ディスコ Relocation method
CN109994579B (en) * 2019-04-30 2020-12-25 成都辰显光电有限公司 Preparation method of micro LED display panel and micro LED display panel
CN110112148A (en) * 2019-05-20 2019-08-09 京东方科技集团股份有限公司 Light emitting diode module and its manufacturing method, display device
JP7199307B2 (en) * 2019-05-24 2023-01-05 株式会社ディスコ Relocation method
EP3979343A4 (en) 2019-05-31 2023-05-24 Boe Technology Group Co., Ltd. Display back plate and manufacturing method, display panel and manufacturing method, and display device
WO2020238173A1 (en) 2019-05-31 2020-12-03 京东方科技集团股份有限公司 Display backplane and manufacturing method therefor, and display device
JP7364603B2 (en) 2019-06-13 2023-10-18 京東方科技集團股▲ふん▼有限公司 Mass transfer method and system for micro light emitting diode
KR20200142685A (en) 2019-06-13 2020-12-23 삼성전자주식회사 Micro led transferring method and display module manufactured threrby
CN110224002A (en) * 2019-06-18 2019-09-10 京东方科技集团股份有限公司 A kind of microLED panel preparation method and Preparation equipment
JP2022537156A (en) * 2019-06-19 2022-08-24 ジェイド バード ディスプレイ（シャンハイ） リミテッド System and method for coaxial multicolor LED
CN110265522B (en) * 2019-06-28 2021-01-08 上海天马微电子有限公司 Display panel, display device, and method for manufacturing display panel
DE102019118270B4 (en) * 2019-07-05 2021-10-07 X-Fab Semiconductor Foundries Gmbh Process for the production of semiconductor components to increase the yield in microtransfer printing
KR20210007705A (en) 2019-07-12 2021-01-20 삼성전자주식회사 Led devices transferring method and display module manufactured threrby
WO2021020594A1 (en) * 2019-07-26 2021-02-04 엘지전자 주식회사 Method for manufacturing display device using semiconductor light emitting device
US11600747B2 (en) 2019-08-16 2023-03-07 Boe Technology Group Co., Ltd. Display backplane and method of manufacturing the same, display device
KR20210023375A (en) * 2019-08-23 2021-03-04 삼성전자주식회사 Laser transffering apparatus and transffering method using the same
CN110517595A (en) * 2019-08-30 2019-11-29 京东方科技集团股份有限公司 A kind of transparent display panel and transparent display
KR20210027848A (en) * 2019-09-03 2021-03-11 삼성전자주식회사 Micro led display and manufacturing method thereof
TWI727428B (en) * 2019-09-20 2021-05-11 東貝光電科技股份有限公司 Method for manufacturing micro led panel and micro led panel thereof
US20210151649A1 (en) * 2019-11-18 2021-05-20 Facebook Technologies, Llc Bonding of light emitting diode arrays
US11521887B2 (en) * 2019-12-18 2022-12-06 Seoul Viosys Co., Ltd. Method of transferring micro LED and micro LED transferring apparatus
TW202125745A (en) * 2019-12-25 2021-07-01 優顯科技股份有限公司 Electronic device and method of manufacturing the same
US11777066B2 (en) 2019-12-27 2023-10-03 Lumileds Llc Flipchip interconnected light-emitting diode package assembly
WO2021177646A1 (en) * 2020-03-05 2021-09-10 삼성전자주식회사 Display module and method for manufacturing display module
JP7325655B2 (en) * 2020-03-10 2023-08-14 ルミレッズ リミテッド ライアビリティ カンパニー Manufacturing method for extended LED array assembly
KR102216369B1 (en) * 2020-03-19 2021-02-17 (주)라이타이저 Led chip transferring method and adevice using foam and photoresist, manufacturing method of display apparatus using the same
KR102364729B1 (en) * 2020-04-29 2022-02-22 한국광기술원 Method of transferring micro light emitting device
TWI794983B (en) * 2020-05-08 2023-03-01 旭豐半導體股份有限公司 Fabrication method of microchip array optical assembly with ultraviolet light-transmitting substrate and the assembly
TWI747272B (en) * 2020-05-08 2021-11-21 旭豐半導體股份有限公司 Method for manufacturing microchip array optical component with ultraviolet light-transmitting substrate and the component
JP2023526833A (en) 2020-05-18 2023-06-23 ナノシス， インコーポレイテッド Sub-pixel light-emitting diode for direct-view display and method of manufacturing same
DE21818011T1 (en) 2020-06-03 2023-07-06 Jade Bird Display (shanghai) Limited SYSTEMS AND METHODS FOR A MULTICOLOR LED PIXEL UNIT WITH HORIZONTAL LIGHT EMISSION
TWI747327B (en) * 2020-06-15 2021-11-21 吳伯仁 System and method for making micro led display
CN112289908B (en) * 2020-09-11 2022-08-02 罗化芯显示科技开发(江苏)有限公司 Method for transferring mass of mini-LED chip
CN112466795A (en) * 2020-11-10 2021-03-09 南昌大学 Micro LED bulk transfer method and transfer substrate
US20220302339A1 (en) * 2021-03-16 2022-09-22 Applied Materials, Inc. Led transfer materials and processes
CN115458521A (en) 2021-05-21 2022-12-09 联华电子股份有限公司 Micro light-emitting diode layout structure and manufacturing method thereof
DE102021116242A1 (en) 2021-06-23 2022-12-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Method for producing an optoelectronic component and optoelectronic component
CN113471339B (en) * 2021-09-02 2021-11-09 罗化芯显示科技开发(江苏)有限公司 Mass transfer method of Micro-LED chips
FR3128315A1 (en) * 2021-10-15 2023-04-21 Aledia Transfer method of an optoelectronic device

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4000856B2 (en) * 2002-01-17 2007-10-31 ソニー株式会社 Element arrangement method and image display device manufacturing method
JP2010177390A (en) * 2009-01-29 2010-08-12 Sony Corp Method of transferring device and method of manufacturing display apparatus
JP2010205943A (en) * 2009-03-04 2010-09-16 Canon Inc Transfer method of functional region, led array, led printer head, and led printer
WO2010149027A1 (en) * 2009-06-22 2010-12-29 Industrial Technology Research Institute Light-emitting unit array, method for fabricating the same and projection apparatus
US8642363B2 (en) 2009-12-09 2014-02-04 Nano And Advanced Materials Institute Limited Monolithic full-color LED micro-display on an active matrix panel manufactured using flip-chip technology
CN102903804B (en) 2011-07-25 2015-12-16 财团法人工业技术研究院 Method for transferring light emitting element and light emitting element array
TWI590498B (en) * 2013-06-03 2017-07-01 財團法人工業技術研究院 Electronic device array and method of transfer-bonding electronic devices
TWI603390B (en) * 2013-07-29 2017-10-21 晶元光電股份有限公司 Method of selectively transferring semiconductor devices
CN110010750B (en) * 2014-06-18 2021-11-09 艾克斯展示公司技术有限公司 Micro-assembly LED display
US9698134B2 (en) * 2014-11-27 2017-07-04 Sct Technology, Ltd. Method for manufacturing a light emitted diode display
JP6650941B2 (en) * 2015-04-01 2020-02-19 ゴルテック．インク Micro light emitting diode transfer method, manufacturing method, apparatus and electronic equipment
JP6546278B2 (en) * 2015-05-21 2019-07-17 ゴルテック．インク Method of transporting micro light emitting diode, manufacturing method, apparatus and electronic device
JP6533838B2 (en) * 2015-11-04 2019-06-19 ゴルテック インコーポレイテッド Method of transporting micro light emitting diode, manufacturing method, apparatus and electronic device
US10068888B2 (en) 2015-12-21 2018-09-04 Hong Kong Beida Jade Bird Display Limited Making semiconductor devices with alignment bonding and substrate removal
CN106206872A (en) * 2016-08-04 2016-12-07 南京大学 GaN base visible ray micron post array LED device that Si CMOS array drive circuit controls and preparation method thereof

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