TWI747272B - Method for manufacturing microchip array optical component with ultraviolet light-transmitting substrate and the component - Google Patents

Abstract

A microchip array optical assembly with an ultraviolet light-transmitting substrate includes: an ultraviolet light-transmitting array substrate with a light-transmitting substrate body and a set of drive circuit units. It also has a setting surface for setting the driving circuit unit and a bottom surface opposite to the setting surface; a group of microchip arrays that can block the ultraviolet excitation light, including a plurality of microchip arrays arranged at a gap interval, and driven by the driving circuit unit respectively Each microchip is for emitting and/or receiving at least one light, and each microchip can block the penetration of ultraviolet excitation light; a light-shielding part filled in the gap; and a cover microchip array and drive The transparent protection unit of the circuit unit is used to hermetically seal the microchip array on the ultraviolet-transmitting array substrate.

Description

Method for manufacturing microchip array optical component with ultraviolet light-transmitting substrate and the component

A microchip array optical component, in particular a microchip array optical component with an ultraviolet light-transmitting substrate.

When the light-emitting diode (LED) was first invented, it replaced the traditional small tungsten bulbs, and was used to indicate lights on various devices. Later, with the continuous advancement of phosphor materials and packaging technology, LEDs are gradually becoming large-scale, high-lumens and have power-saving characteristics, so they replace the old cold cathode tubes and are used in the backlight modules of liquid crystal displays as passive light sources for turning on and off, mainly in the form of light strips. The cold cathode tube is configured according to the configuration method of the backlight module.

Later, because of the ever-increasing requirements for the native contrast of liquid crystal displays and the speed of picture response, some people proposed the concept of dynamic backlight, which prevents consumers from seeing the liquid crystal by forcibly turning off the backlight power at the end of the picture period to produce a black picture. Molecule reversal is not as good as the trailing afterimage; and the backlight power is forcibly turned off during the pixel writing time to produce a black screen to prevent consumers from seeing the splattered surface of the liquid crystal molecules when the screen is switched; even several LEDs The light bars are arranged side by side to form a backlight module, and then according to the content of the picture to be displayed, only the corresponding specific light bar is selected to achieve the purpose of emphasizing the theme of the picture or enhancing the contrast and saving power. This is the famous local dimming technology. Some high-end LCD TVs also adopt dithering technology with area control technology to produce brightness gray scales in certain areas of the LED backlight. It can provide the brightness and contrast required by the theme of the picture more accurately. Because the response speed of LED is more than a thousand times faster than that of LCD panels at the time, it is very suitable for use with area control technology and used in LCD displays. However, the LED chip has large particles and the number of light bars Not much. Therefore, the above-mentioned area control technology can only divide the entire display screen into a few areas for control, and the degree of improvement of the display quality of the liquid crystal display is still very limited.

Later, the luminous efficiency of LEDs has improved and can be miniaturized. Electronic component soldering technology has also entered the era of Surface Mount Technology (SMT). Therefore, a large number of LED chips are manufactured and assembled into lighting equipment, and quickly replace traditional provinces. Light bulbs and tubes, and many LED chip manufacturers have a large supply of sub-millimeter light-emitting diodes (mini LEDs) with widths as small as 100 to 150 microns (μm). The array type mini LED backlight module composed of more than 10,000 mini LEDs, and the further development of more small areas of active matrix dynamic backlight technology, has promoted the contrast and color rendering capabilities of liquid crystal displays to be compatible with organic light-emitting diodes ( OLED (organic light emitting diode) displays are comparable to those of OLED displays, and the cost is only 70% to 80% of OLED displays. It has immediate market competitiveness.

Some large-scale LCD panel factories even directly use a huge amount of red, blue and green light-emitting mini LED chips as three primary color sub-pixels, and install them on the array substrate in groups of three (constitute full-color pixels). , Assembled into a large-size mini LED display with high resolution, high color saturation, high contrast and high picture update speed. For an 8K resolution display, it has 3840 pixels in the length direction and 2160 in the width direction. The total picture is 8,294,400 pixels, and each pixel contains 3 sub-pixels of red, blue, and green, so the total number of mini LED chips used reaches 24,883,200, and the large-size mini LED will be completed. The display is displayed in the world's large-scale display exhibition halls, and its future market is promising.

Regardless of the above-mentioned mini LED backlight module or mini LED display, an active drive circuit array corresponding to the configuration position of each mini LED chip is formed on a substrate according to the predetermined position of the mini LED array. Generally speaking, each The distance between the installation positions of the mini LED chips and the adjacent mini LED chips up, down, left, and right is about 50μm, and then black resin is formed at the above interval to set up grid-like walls, and then each mini LED chip is installed on the above The mini LED array is formed on the driving circuit in the grid, and finally the grid wall and the mini LED chip are continuously covered with a packaging material with low dielectric constant and high light transmittance to prevent static electricity, moisture and air from affecting the driving circuit. And the hazards of mini LED chips.

However, as shown in FIG. 9, in order to provide as many mini LED chips 90 as possible on the array substrate 9 with a limited area and improve the screen resolution, the width of each grid 92 is generally about 110~160μm, which is only larger than that of the mini LED. The width of the chip 90 is slightly larger. It is difficult to accurately locate the chip 90 when transferring a huge amount of the chip 90 to such a dense grid 92 at the same time. It is easy to cause some of the chip 90 to be skewed and cause the welding area of the chip 90 and the driving circuit (not shown) to change. If it is small, the electrical connection impedance is increased, and the reduction of the light-emitting brightness of the chip 90 leads to the problem of uneven brightness as a whole.

With the gradual shrinking of the chip size, the picture resolution can undoubtedly be further improved, but in the assembly process, precise positioning has also become a bigger problem: especially how to accurately shape the grid-like wall 94 as a side light shielding, if you need to move it first Turn the chip and fix it to the drive circuit by soldering. When the microchip is installed skewed or even partially occupying the originally spaced position, it is difficult to accurately form the grid-like wall; on the contrary, if the grid-like wall is to be formed first, because of the wall There is still a certain height in itself, and the microchip cannot be placed on the drive circuit for soldering at all.

Therefore, how to transfer a huge amount and accurately form a grid-like wall has become a technical problem that needs to be overcome after the LED size is reduced. The next generation of mini LED display products, micro Because of the smaller chip size of LED displays, an effective mass transfer technology is needed to achieve commercialization. Therefore, famous Apple, Samsung and top large companies in various countries have begun research and development, recruiting a large number of cutting-edge scientific and technological talents and investing huge funds over the years. There is still no major improvement, so how to transfer a huge amount of microchips for positioning and mounting is the problem to be solved by the present invention.

On the other hand, optical detection chips such as fingerprint recognition or face recognition also need to be laid out in an array pattern, which also involves the miniaturization of chip size, and the technical troubles that each cell must be isolated from lateral light interference by a grid-like wall. This is also the technical feature to be solved by the present invention.

One of the objectives of the present invention is to provide a microchip array optical assembly with an ultraviolet light-transmitting substrate, which can respond to the mounting skew of the microchip during mass transfer, and still accurately provide a grid-like wall, so that the power of microchip miniaturization is sufficient Play to effectively improve the resolution of optical components.

Another object of the present invention is to provide a microchip array optical assembly with a UV-transmitting substrate, no matter whether the microchip is slightly skewed during mass transfer installation, the grid-like walls can still be accurately arranged, which greatly improves the product yield.

Another object of the present invention is to provide a method for manufacturing a microchip array optical component with an ultraviolet-transmitting substrate, which uses an existing drive circuit and a microchip array as an optical mask to accurately shape a grid-like wall separating the microchips. Increase output efficiency.

Another object of the present invention is to provide a method for manufacturing a microchip array optical component with an ultraviolet-transmitting substrate, which uses an existing drive circuit and a microchip array as an optical shield to accurately form a grid-like wall according to the spacing of the microchips. Make it possible to miniaturize pixels and enhance the market competitiveness of optical components.

To achieve the above objective, the present invention discloses a microchip with a substrate that is transparent to ultraviolet light An array optical component. The microchip array includes an ultraviolet light-transmitting array substrate with a light-transmitting substrate body and a set of drive circuit units. The light-transmitting substrate body can at least penetrate a portion of ultraviolet excitation light having a specific wavelength. , And has an installation surface for installing the drive circuit unit and a bottom surface opposite to the installation surface; a set of microchip arrays that can block the ultraviolet excitation light, including a plurality of microchip arrays arranged at least one gap apart from each other and received respectively For the microchips driven by the driving circuit unit, each of the microchips is for emitting and/or receiving at least one light, and each of the microchips can block the penetration of the ultraviolet excitation light; a light shielding portion filled in the gap And a transparent protection unit covering the microchip array and the drive circuit unit, for sealing the microchip array on the ultraviolet light-transmitting array substrate.

The present invention also discloses a method for manufacturing a microchip array optical assembly with an ultraviolet light-transmitting substrate, including the following steps: (a) forming a set of driving circuit units on a light-transmitting substrate body, wherein the light-transmitting substrate body can at least provide The penetrating part has a specific wavelength of ultraviolet excitation light penetrating, and has a setting surface for setting the driving circuit unit and a bottom surface opposite to the setting surface; (b) soldering a group of microchip arrays including a plurality of microchips To the driving circuit unit, and the microchips are arranged with at least a gap between each other and are driven by the driving circuit unit, each of the microchips is for emitting and/or receiving at least one light, and each of the microchips Can block the penetration of the ultraviolet excitation light (c) form a photosensitive layer covering the microchip array, the gap, and the drive circuit; (d) use a light beam including at least the ultraviolet excitation light to face the photosensitive layer from the bottom The layer is exposed to light, thereby modifying the photosensitive layer located in the gap; (e) removing the photosensitive layer modified by the light beam, so that a hollow area is formed in each of the spaced regions; (f) using a doped The polymer resin mixed with at least one light-shielding material surrounds and fills the hollow area, and then irradiates the polymer resin with a curing beam to cure it to form a The light shielding part of the gap; (g) removing the photosensitive layer shielded by the mask to expose the microchip array; and (h) forming a light penetrating portion that covers at least the microchip array and the drive circuit The transparent protective layer.

The present invention uses the drive circuit and the microchip array as a mask to form a grid-shaped wall that separates each microchip. On the one hand, it can avoid the conventional grid-shaped wall when the microchips are welded after forming the grid-shaped wall. Regarding the obstacles caused by the mass transfer of microchips, on the other hand, it also avoids the problem of the inability to accurately shape the grid-like walls after the microchips are installed skewed, so as to make the output efficiency of the microchip array optical components with the ultraviolet transparent substrate and The product yield rate is far better than before, and after the chip is miniaturized, the reduction in chip size can correctly reflect the improvement of the performance of optical components with the reduction of pixels and the improvement of resolution.

With the manufacturing method and product disclosed in the present invention, optical components such as light-emitting components or photosensitive components can be effectively miniaturized as the microchip shrinks, and the cell of two adjacent microchips can be effectively avoided. There is optical interference between them, which greatly improves the market competitiveness of optical components.

1, 1’, 1”: Optical components

11: Ultraviolet light-transmitting array substrate

2: Translucent substrate body

20: Setting the surface

21: Bottom

22: Drive circuit unit

3. 3’: microchip array

30: microchip

32: Fluorescent material layer

321: Red fluorescent glue

322: Green fluorescent glue

332’, 332”: light sensor chip

34: Clearance

4: photosensitive layer

42: Exposure of photosensitive layer

44: Unexposed photosensitive layer

5: Shading material

51, 51’, 51”: recessed

52, 52’, 52”: shading part

6, 6": Transparent protection unit

60": light penetrating surface

61": 稜鏡片

611": Convex lens microstructure

62": Uniform diffusion sheet

621": Diffusion particles

7’: Infrared light source

70~79: Steps

9: Array substrate

90: mini LED chip

92: Grid

94: Wall

FIG. 1 is a schematic diagram of the array substrate of the microchip array of the first preferred embodiment of the microchip array optical assembly with the ultraviolet-transmitting substrate of the present invention.

2 and FIG. 3 are schematic diagrams of the first preferred embodiment of the microchip array optical component with the ultraviolet-transmitting substrate in the photolithography method to produce the hollow area.

4 and 5 are schematic diagrams showing the completion of the microchip array optical assembly of the first preferred embodiment of the microchip array optical assembly with the ultraviolet-transmitting substrate according to the present invention.

Fig. 6 is the first preferred embodiment of the microchip array optical component with the ultraviolet-transmitting substrate of the present invention Schematic diagram of the application of the full-color backlight module.

Fig. 6 is a flow chart of a method for manufacturing a microchip array optical assembly with an ultraviolet-transmitting substrate according to the present invention.

FIG. 7 is a schematic diagram of the application of the fingerprint recognition panel of the second preferred embodiment of the microchip array optical assembly with the ultraviolet-transmitting substrate of the present invention.

FIG. 8 is a schematic diagram of the application of the infrared light signal transmitter of the third preferred embodiment of the microchip array optical assembly with the ultraviolet light-transmitting substrate of the present invention.

Figure 9 is a schematic diagram of a prior art mini LED backlight module.

The foregoing and other technical contents, features, and effects of the present invention will be clearly presented in the following detailed description of the preferred embodiments with reference to the drawings; in addition, in each embodiment, the same elements will be similar The label indicates.

The first preferred embodiment of a microchip array optical component with a UV-transparent substrate of the present invention takes a backlight module for a liquid crystal display as an example. First of all, as shown in FIG. Ultraviolet light, full-band visible light and infrared light all have an alkali-free glass sheet with a light transmittance of more than 80% as the light-transmitting substrate body 2. The light-transmitting substrate body 2 will not easily occur even in the high temperature environment of the welding furnace. Melt or deform. For ease of description, the upper side of the light-transmitting substrate body 2 is referred to as a setting surface 20, and the opposite of the setting surface 20 is defined as a bottom surface 21. In step 70 shown in FIG. 6, first, by photolithography, a driving circuit unit 22 of a metal active array circuit that is opaque to ultraviolet light is fabricated on the above-mentioned setting surface 20; the driving circuit unit 22 is formed by a plurality of The thin film transistors arranged in an array are composed of source lines connected in parallel with each other in the row direction and gate lines connected in parallel in the column direction. The drain of each thin film transistor is provided with solder paste by screen printing.

Then in step 71, move a large number of microchips one by one to the thin film transistors arranged in the above array. The microchips 30 here are mainly blue mini LED chips. In this example, none of these microchips can tolerate the 365nm ultraviolet wavelength. The excitation beam easily penetrates, thereby forming a set of microchip arrays 3 that can block ultraviolet light with a wavelength of 365nm. Any two adjacent microchips 30 in the aforementioned microchip array 3 are about 50 microns in diameter. The gaps 34 are isolated from each other, and then all the microchips 30 are soldered on the corresponding driving circuit unit 22 through a welding furnace. Due to the massive transfer, a gap of about 50 microns is formed between any two adjacent microchips 30 After welding, any two adjacent microchips 30 in the microchip array 3 are also roughly separated from each other by a gap 34 of about 50 microns. After that, an electric field can be generated by selecting a specific at least one gate line and applying an appropriate voltage. , The semiconductor channel layer between the source and drain is temporarily transformed into a conductor, and a driving signal can be input from the source line to light up each microchip 30.

Please refer to FIGS. 2 and 3 together, and then in step 72, a layer of photoresist is coated in the direction of the setting surface 20, thereby forming a full coverage of the microchip array 3 and the above-mentioned driving circuit 22, and also filling the above-mentioned microchip 3 array. A photosensitive layer 4 in the gap 34; and in step 73, using the microchip array 3 and the driving circuit 22 as a mask, using, for example, ultraviolet light with a wavelength of 365 nm as the excitation beam, irradiating upward from the bottom surface 21 direction, and irradiating the light The layer 4 undergoes a photolithography process. The photosensitive layer 4 that is not shielded by the microchip array 3 and the above-mentioned driving circuit 22 will therefore be exposed to the excitation light beam to form an exposed photosensitive layer 42; on the contrary, by the microchip array 3 and the above-mentioned driving circuit The photosensitive layer 4 shielded by 22 is not irradiated by the excitation beam and is referred to as the unexposed photosensitive layer 44.

The exposed photosensitive layer 42 undergoes a photochemical reaction after being irradiated by the above-mentioned ultraviolet light to be modified, and becomes dissolvable by reacting with the developing solution; then in step 74, the developing solution is used to develop The exposed photosensitive layer 42 is removed to expose the hollow area including the gap 34, and the unexposed photosensitive layer 44 is left on the microchip array 3 and the driving circuit 22. Even in the process of massive movement, many microchips 30 are not completely neatly arranged, but because the microchip 30 is used as a shielding light shield, the hollowed-out area is completely distributed in accordance with the placement position of the microchip 30 without the slightest distortion. That is, even if the welding position of the microchip 30 is slightly skewed by, for example, 10 μm, the gap between adjacent microchips remains 40 μm.

Please continue to refer to FIGS. 4 and 5, and then in step 75, the hollow area including the gap 34 is formed in the ultraviolet-transmitting array substrate 11 by the injection molding method, and the photosensitive black polymer resin based on the negative photoresist is filled around it. Here, the photosensitive black polymer resin is doped with light-shielding materials such as iron oxide, graphite, graphene, aluminum oxide, lead halogen perovskite, hydrocarbon red fluorene (rubrene), black rubber or black silicone 5, It is opaque to infrared light and can absorb 365nm wavelength ultraviolet light, and when it absorbs ultraviolet light, it will undergo a photochemical cross-linking reaction and be cured. Then in step 76, full-scale exposure with 365nm wavelength ultraviolet light is performed again to cure the above-mentioned photosensitive black polymer resin in the hollowed-out area of the gap 34 to form the light-shielding portion 52 exemplified as surrounding a grid-like wall, and at the same time The unexposed photosensitive layer 44 on the microchip array 3 and the driving circuit 22 is modified.

In step 77, the modified original unexposed photosensitive layer 44 is removed by development to expose the recess 51 of the microchip array 3 and the driving circuit. At this time, the light-shielding portion 52 has been formed, which not only allows the microchip to be doped with light-shielding materials The light is not easily irradiated to adjacent cells, and regardless of whether the microchip 30 is installed skewed or not, the shading portion 52 is precisely formed at every interval according to the microchip layout shape, which greatly improves the product manufacturing yield of the overall optical assembly. The output efficiency also increases accordingly. In step 78, in each of the above-mentioned recesses 51, according to requirements are respectively filled with fluorescent materials such as red fluorescent glue 321 (to form red sub-pixels) and green fluorescent glue 322 (green sub-pixels) The layer 32 and no fluorescent glue (blue sub-pixel) are filled, thereby constituting the three primary colors of full color.

Finally, in step 79, an epoxy resin with white light, visible light, high light transmittance, high refractive index, heat resistance, moisture resistance, insulation, and chemical stability is used to cover the entire surface from the direction of the installation surface 20, and the formation is interpreted as transparent The transparent protection unit 6 of the protective layer airtightly seals the microchip array 3, the light shielding portion 52 and the drive circuit unit 22 on the ultraviolet light-transmitting array substrate 11 to form the optical component 1, which can avoid defects caused by moisture and oxygen Influence.

Because the manufacturing method in this embodiment uses the existing drive circuit and the microchip array as the optical mask to accurately form the hollow area, and then fill the hollow area with light-shielding material, you can accurately follow each microchip The placement and installation position of the microchip is formed into the shading part of the grid-like wall, which not only reduces the cost of a photomask and the process cost of a photolithography process, but also can fully utilize the advantages of chip miniaturization. The resolution of optical components has been improved simultaneously.

In addition, because the array optical component of this embodiment has blue, green and red sub-pixels, you can choose to light up three sub-pixels at the same time to provide white light as the light source of the liquid crystal display, or you can choose according to the LCD screen. It is required to light only one or two sub-pixels to provide light sources of different colors to achieve the additional effect of saving power and improving contrast, allowing LCD designers to make more complex driving method changes to obtain better display quality, and even Add the gray-scale control circuit to be used as a low-level display alone.

The active array substrate of the present invention is often mounted with other optoelectronic elements to make array electronic devices with other functions. The second preferred embodiment of the present invention is described below. In this example, the same parts as the above-mentioned preferred embodiments are described. It will not be repeated here, similar components also use similar names and labels, and only the differences will be explained. Please refer to FIG. 7, the optical component 1'in this example is illustrated as a fingerprint recognition panel, and the multiple microchips in the microchip array 3'are illustrated as infrared light. The light sensor chip 332' that senses the microchip.

The fingerprint recognition panel in this example can emit infrared light by an infrared light source 7', and then be reflected by the grooves and lines of the finger skin, and then drive the light sensor chip 332' to receive it to generate fingerprint sensing signals, or just drive it The light sensor chip 332' receives the infrared rays naturally emitted from the finger. Because the texture of the finger's epidermis will slightly shield the infrared rays, a plurality of adjacent light sensor chips 332' will receive different intensities of infrared light, which can produce fingerprints. Test signal.

Because the light sensor chips 332' in this example are located in their respective recesses 51', and there is a black opaque light-shielding portion 52' between adjacent light sensor chips 332' to block, so the light sensor chip 332' hardly It will receive scattered infrared light outside the opening angle of the recess 51', so when the chip is miniaturized to reduce the size, more cells can be placed within the same finger to increase the resolution, and at the same time it has a very high resolution. With high signal-to-noise ratio and excellent sensitivity, the optical component 1" has a competitive advantage with excellent performance in the market.

The third preferred embodiment of the present invention will be described below. In this example, the same parts as in the second preferred embodiment will not be repeated here. Similar components also use similar names and labels, and only the differences will be explained. Please refer to Figure 8. The optical component 1" in this example is used as an infrared light signal receiver. In order to obtain a more stable signal transmission quality, the transparent protection unit 6" of the optical component 1" can be placed away from the light sensor chip 332" The light-transmitting surface 60" is attached with a convex lens microstructure 611" of the scallop sheet 61", which has a light-collecting effect so that the sensor chip 332" can also receive the infrared light originally irradiated to the aforementioned light-shielding part 52", and receive more Infrared light signal with multiple luminous flux; and a uniform diffusion sheet 62" with diffusion particles 621" is attached to make the illuminance of infrared light on the optical component 1" more uniform.

In the optical component of this embodiment, by attaching a uniform diffusion sheet to the surface of the transparent packaging layer, the emitted and received infrared light brightness is more uniform, and a more stable optical signal transmission is obtained. The transmission quality makes the optical component of this embodiment more competitive in the market and achieves another objective of the invention.

In summary, the present invention fills the light-shielding part of the grid-like wall in the hollow area outside the microchip array and the driving circuit on the microchip array optical assembly after the microchip array is soldered to the driving circuit, and the macro When the microchip array is transferred to the driving circuit, it will not be hindered by the shading part of the grid-like wall and cause the problem of poor electrical connection; and the welded microchip array and the driving circuit are used as masks, and photolithography The hollow area is made by the method to save the cost of a photomask and photolithography process; and the hollow area is formed to accurately fill the shading part of the grid-like wall, which can isolate adjacent microchips without interfering with each other and improve the microchip array The signal-to-noise ratio of optical components makes them more competitive in the market.

Of course, in each of the above-mentioned preferred embodiments, the phosphor can also be completed by using two photo-etching processes, and the grid-like wall can also be accurately poured by the inkjet method. The above-mentioned two manufacturing methods can be adapted to each The needs of the embodiments are changed to each other, and they will not hinder the implementation of the present invention.

However, the above are only preferred embodiments of the present invention, and cannot be used to limit the scope of implementation of the present invention. All simple equivalent changes and modifications made in accordance with the scope of the patent application of the present invention and the content of the description of the invention shall apply. It still falls within the scope of the patent for this invention.

1: Optical components

11: Ultraviolet light-transmitting array substrate

2: Translucent substrate body

20: Setting the surface

22: Drive circuit unit

3: microchip array

32: Fluorescent material layer

321: Red fluorescent glue

322: Green fluorescent glue

34: Clearance

51: sunken

52: Shading part

6: Transparent protection unit

Claims (2)

A method for manufacturing a microchip array optical assembly with a UV-transmitting substrate includes the following steps: (a) A group of drive circuit units are formed on a transparent substrate body, wherein at least the transparent substrate body has a penetrable portion Ultraviolet excitation light of a specific wavelength penetrates and has a setting surface for setting the drive circuit unit and a bottom surface opposite to the setting surface; (b) soldering a group of microchip arrays including a plurality of microchips to the drive circuit On the unit, and the aforementioned microchips are arranged with at least one gap between each other and are driven by the aforementioned driving circuit unit respectively, each of the aforementioned microchips is for emitting and/or receiving at least one light, and each of the aforementioned microchips can be blocked The ultraviolet excitation light penetrates; (c) forming a photosensitive layer covering the microchip array, the gap, and the driving circuit; (d) exposing the photosensitive layer from the bottom surface with a light beam including at least the ultraviolet excitation light , Thereby modifying the photosensitive layer located in the gap; (e) removing the photosensitive layer modified by the light beam, so that a hollow area is formed in each of the spaced regions; (e) using a doped at least A polymer resin of light-shielding material surrounds and fills the hollow area; (f) irradiates the polymer resin with a curing beam to cure it to form a light-shielding portion corresponding to the gap; (g) remove the light shielded by the microchip The photosensitive layer exposes the microchip array; and (h) forming a transparent protective layer that can penetrate the light and cover at least the microchip array and the driving circuit. According to the manufacturing method described in item 1 of the scope of patent application, between the above steps (g) and (h), it also includes a step (i) arranging at least one phosphor glue on the above microchip array.

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