CN113629091A - Method for manufacturing microchip array optical assembly with ultraviolet light transmitting substrate and assembly - Google Patents
Method for manufacturing microchip array optical assembly with ultraviolet light transmitting substrate and assembly Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2933/0033—Processes relating to semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2933/0008—Processes
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Abstract
The invention discloses a microchip array optical component with a substrate transmitting ultraviolet light, comprising: the ultraviolet transmitting array substrate is provided with a light transmitting substrate body and a group of driving circuit units, wherein the light transmitting substrate body is used for penetrating partial ultraviolet exciting light with specific wavelength and is provided with a setting surface for setting the driving circuit units and a bottom surface opposite to the setting surface; a group of microchip arrays capable of intercepting the ultraviolet exciting light, which comprises a plurality of microchips which are arranged at intervals with a gap and are respectively driven by a driving circuit unit, wherein each microchip is used for emitting and/or receiving at least one light ray, and each microchip can intercept the penetration of the ultraviolet exciting light; a light shielding part filled in the gap; and a transparent protection unit covering the microchip array and the driving circuit unit for hermetically sealing the microchip array on the ultraviolet-transmitting array substrate. In addition, the invention also discloses a manufacturing method of the microchip array optical component with the ultraviolet light transmitting substrate.
Description
Technical Field
The invention relates to a microchip array optical component, in particular to a microchip array optical component with an ultraviolet light transmitting substrate.
Background
Light-emitting diodes (LEDs) are invented to replace conventional small tungsten filament lamps and are applied to various devices to indicate lamp signs, and then, with the continuous progress of phosphor materials and packaging technologies, LEDs are gradually becoming larger and more lumen and have the characteristic of power saving, so as to replace the conventional cold cathode tubes to be applied to the backlight module of the liquid crystal display as a passive on/off light source, and are mainly configured in a manner of a light bar to simulate the configuration of the cold cathode tubes in the backlight module.
Then, as the requirements of people on the original contrast and the image response speed of the liquid crystal display are increasingly increased, a concept of dynamic backlight is proposed, and a consumer is prevented from seeing a trailing ghost image which is generated by the fact that the liquid crystal molecules are not reversed in time by forcibly turning off a backlight power supply at the end of an image period to generate a black image; and forcibly turning off the backlight power supply within the pixel writing time to generate a black picture to prevent the consumer from seeing the disordered picture in the liquid crystal molecule rotation during the picture switching; even several LED light bars are arranged side by side to form a backlight module, and then only the corresponding specific light bar is driven according to the content of the picture to be displayed, so as to achieve the purposes of emphasizing the picture theme or enhancing the contrast and saving electricity, namely the famous local dimming technology, some high-order liquid crystal televisions also adopt the dithering technology together with the local control technology, the brightness gray scale is generated in some areas of the LED backlight to provide the brightness and contrast needed by the picture theme more accurately, because the response speed of the LED is more than thousand times faster than that of the current liquid crystal panel, therefore, the LED display is very suitable for being applied to the liquid crystal display by matching with the area control technology, but the LED chip has large particles and a small number of light bars, therefore, the area control technique can only control the whole display screen area by dividing it into a small number of areas, and the improvement degree of the display quality of the liquid crystal display is very limited.
Since the LED has been increasingly used in the field of LED light emission efficiency and miniaturization, the Technology of electronic component soldering has also entered the Surface Mount Technology (SMT) era, therefore, a large number of LED chips are manufactured and assembled to form the lighting device, and quickly replace the traditional electricity-saving bulb and lamp tube, moreover, many LED chip factories have the capability of supplying a large number of sub-millimeter light emitting diodes (mini LEDs) with the width of 100-150 micrometers (mum), and backlight module manufacturers can realize an array type mini LED backlight module consisting of more than tens of thousands of mini LEDs, further, more active matrix dynamic backlight technologies with small areas are developed to improve the contrast and color rendering capabilities of the lcd to a level comparable to that of an Organic Light Emitting Diode (OLED) display, and the cost is only 70-80% of that of the OLED display, and the OLED display has immediate market competitiveness.
Some large-scale liquid crystal panel factories even directly use a huge amount of mini LED chips emitting red light, blue light and green light as three primary color sub-pixels, each three of which are arranged on an array substrate in a group (forming full color pixels) to assemble a large-scale mini LED display with high resolution, high color saturation, high contrast and high picture updating speed, wherein, for a display with 8K resolution, 3840 pixels are arranged in the length direction, 2160 pixels are arranged in the width direction, the whole picture is 8,294,400 totally, and each pixel comprises 3 sub-pixels of red, blue, green and the like, so the total number of the used mini LED chips reaches 24,883,200, and the completed large-scale mini LED display is displayed in various large display venues in the world to show the front and honor the future market of the large-scale mini LED display.
In the mini LED backlight module or the mini LED display, an active driving circuit array corresponding to the arrangement position of each mini LED chip is formed on a substrate according to a predetermined mini LED array position, generally, the distance between each mini LED chip and the installation positions of the up-down, left-right, adjacent mini LED chips is about 50 μm, then a grid-shaped enclosure is formed at the interval by black resin, then each mini LED chip is installed on the driving circuit in the grid to form the mini LED array, and finally the grid-shaped enclosure and the mini LED chips are continuously covered by a packaging material with low dielectric constant and high light transmittance to prevent the damage of static electricity, moisture and air to the driving circuit and the mini LED chips.
However, as shown in fig. 9, in order to arrange the largest possible number of mini LED chips 90 on the array substrate 9 with a limited area to improve the resolution of the image, the width of each grid 92 is generally about 110 to 160 μm and is slightly larger than the width of the mini LED chip 90, so that it is difficult to precisely position a large number of chips 90 when simultaneously transferring them into such dense grids 92, and it is easy to cause some chips 90 to be skewed, which leads to a smaller bonding area between the chips 90 and a driving circuit (not shown) and thus to an increase in the impedance of electrical connection, and the problem of uneven brightness resulting from the decrease in the light emitting brightness of the chips 90.
As the chip size is gradually reduced, the resolution of the image can be further improved, but in the assembly process, the precise positioning becomes more difficult: especially, if the lattice-shaped surrounding walls 94 serving as the light shielding side are formed accurately, if the chip is transferred and soldered to the driving circuit, it is difficult to form the lattice-shaped surrounding walls accurately when the microchip is mounted at a deviated position or even partially occupies a position which should be originally spaced; conversely, if a grid enclosure is to be formed first, the microchip cannot be placed correctly on the driver circuit for soldering at all, since the enclosure itself is still at a certain height.
Therefore, how to transfer huge amount and accurately form the grid-shaped enclosing wall becomes a technical problem which needs to be overcome urgently after the size of the LED is reduced, and the micro LED display of the next generation display product of the mini LED has smaller chip size, and needs an effective huge amount transfer technology to realize commercialization, so that the famous Apple company, Samsung company and top large enterprises in all countries are researched and developed, and a great amount of advanced technical talents and huge investment funds are not greatly improved yet for years, so that how to transfer huge amount and position the microchip for installation is the problem to be solved by the invention.
On the other hand, optical detection chips such as fingerprint recognition or face recognition also need to be laid out in an array mode, which also involves the miniaturization of chip size, and the technical trouble that the side light interference between each cell (cell) must be isolated by grid-shaped walls, which is also the technical feature to be solved by the present invention.
Disclosure of Invention
In view of the above-mentioned deficiencies of the prior art, it would be desirable to provide an optical assembly having an array of microchips with an ultraviolet light-transmissive substrate according to embodiments of the present invention, which is intended to achieve the following objectives: (1) the method can provide a grid-shaped enclosing wall accurately in response to the mounting deflection of the microchip during mass transfer, so that the power of the microminiaturization of the microchip is fully exerted, and the resolution of the optical component is effectively improved; (2) no matter whether the microchip is slightly inclined in the process of mass transfer installation, the latticed enclosing walls can still be accurately laid out, and the product yield is greatly improved. In addition, the present invention also provides a method for manufacturing an optical assembly with a microchip array having a substrate transmitting ultraviolet light, which aims to achieve the following objects: (1) the formed driving circuit and the microchip array are used as optical shields, and the grid-shaped enclosing wall for separating the microchips is precisely formed, so that the production efficiency is greatly improved; (2) the formed driving circuit and microchip array are used as optical shielding to precisely form grid-shaped enclosing wall according to microchip interval, so that pixel miniaturization is possible and market competitiveness of optical components is improved.
According to an embodiment of the present invention, there is provided an optical assembly with a microchip array having an ultraviolet-transmitting substrate, the microchip array comprising an ultraviolet-transmitting substrate having a light-transmitting substrate body and a set of driving circuit units, the light-transmitting substrate body being at least transparent to a portion of ultraviolet excitation light having a specific wavelength, and having a setting surface for setting the driving circuit units and a bottom surface opposite to the setting surface; a group of microchip arrays capable of blocking the ultraviolet excitation light, which comprises a plurality of microchips which are arranged at intervals with at least one gap and are respectively driven by the driving circuit unit, wherein each microchip is used for emitting and/or receiving at least one light ray, and each microchip can block the ultraviolet excitation light from penetrating; a light shielding part filled in the gap; and a transparent protection unit covering the microchip array and the driving circuit unit for hermetically sealing the microchip array on the ultraviolet-transmitting array substrate.
According to an embodiment of the present invention, there is provided a method for manufacturing an optical assembly having an array of microchips with an ultraviolet-transmitting substrate, comprising the steps of:
(a) forming a group of driving circuit units on a transparent substrate body, wherein the transparent substrate body is at least penetrated by ultraviolet excitation light with a specific wavelength at a penetrating part and is provided with a setting surface for setting the driving circuit units and a bottom surface opposite to the setting surface;
(b) a set of microchip arrays including a plurality of microchips welded to the driving circuit unit, the microchips being spaced apart from each other by at least one gap and being driven by the driving circuit unit, each microchip being for emitting and/or receiving at least one light, and each microchip being capable of blocking the ultraviolet excitation light from penetrating therethrough
(c) Forming a photosensitive layer covering the microchip array, the gap and the driving circuit;
(d) exposing the photosensitive layer from the bottom surface with a light beam at least including the ultraviolet excitation light, thereby modifying the photosensitive layer in the gap;
(e) removing the photosensitive layer modified by the light beam to form a hollow area in each of the spaced areas;
(f) filling the hollow area with a polymer resin doped with at least one optical rotation shielding material, and irradiating the polymer resin with a curing beam to form a light shielding part corresponding to the gap;
(g) removing the photosensitive layer shielded by the shield to expose the microchip array; and
(h) forming a transparent protective layer for the light to penetrate and covering at least the microchip array and the driving circuit.
Compared with the prior art, the invention forms the latticed enclosing wall for separating each microchip by shielding the driving circuit and the microchip array, on one hand, the obstruction of the latticed enclosing wall to the huge transfer of the microchip when the latticed enclosing wall is formed and the microchip is welded in the prior art can be avoided, and on the other hand, the trouble that the latticed enclosing wall cannot be formed accurately after the microchip is installed and is inclined is also avoided, so that the yield and the product yield of the microchip array optical component with the ultraviolet light transmitting substrate are far superior to the prior art, and the reduction of the chip size can accurately reflect the improvement of the performance of the optical component with reduced pixels and improved resolution after the chip is miniaturized.
By the manufacturing method and the product disclosed by the invention, optical components such as a light-emitting component or a photosensitive component and the like can effectively miniaturize the unit cell along with the reduction of the microchip, and optical interference between two adjacent microchips is effectively avoided, thereby greatly improving the market competitiveness of the optical component.
Drawings
Figure 1 is a schematic view of an array substrate for a microchip array according to a first preferred embodiment of the present invention having an ultraviolet light transmitting substrate.
FIGS. 2 and 3 are schematic diagrams of the photolithography process for fabricating the hollow-out region of the first preferred embodiment of the optical assembly with the microchip array having the UV-transparent substrate according to the present invention.
Figures 4 and 5 are schematic diagrams of a microchip array optical assembly of a first preferred embodiment of the invention having a substrate transparent to ultraviolet light.
FIG. 6 is a schematic diagram of the full color backlight module application of the first preferred embodiment of the microchip array optical assembly with the UV transparent substrate of the present invention.
Figure 6 is a flow chart of the manufacturing method of the microchip array optical assembly with the substrate transmitting ultraviolet light of the present invention.
Figure 7 is a schematic diagram of a fingerprint identification panel application of a second preferred embodiment of the optical assembly having an array of microchips with an ultraviolet light transmitting substrate of the present invention.
FIG. 8 is a schematic diagram of an infrared light signal transmitter application of a third preferred embodiment of the microchip array optical assembly having an ultraviolet light transmitting substrate of the present invention.
FIG. 9 is a schematic diagram of a prior art mini LED backlight module.
Wherein: 1. 1 ', 1' are optical components; 11 is an ultraviolet light transmitting array substrate; 2 is a transparent substrate body; 20 is a setting surface; 21 is a bottom surface; 22 is a driving circuit unit; 3. 3' is a microchip array; 30 is a microchip; 32 is a layer of phosphor material; 321 is red light fluorescent glue; 322 is green light fluorescent glue; 332 'and 332' are light-sensing chips; 34 is a gap; 4 is a photosensitive layer; 42 is an exposed photosensitive layer; 44 is an unexposed photosensitive layer; 5 is a light shielding active material; 51. 51 ', 51' are recesses; 52. 52 ', 52' are light-shielding portions; 6. 6' is a transparent protection unit; 60' is a light penetration surface; 61' is a prism sheet; 611' is a convex lens microstructure; 62' is a uniform diffusion sheet; 621 "diffusion particles; 7' is an infrared light source; 70-79 is the step; 9 is an array substrate; 90 is a mini LED chip; 92 is a grid; and 94 is a fence.
Detailed Description
The invention is further illustrated with reference to the following figures and specific examples. These examples are to be construed as merely illustrative and not limitative of the remainder of the disclosure in any way whatsoever. After reading the description of the invention, one skilled in the art can make various changes and modifications to the invention, and such equivalent changes and modifications also fall into the scope of the invention defined by the claims.
First preferred embodiment
In a microchip array optical assembly having an ultraviolet-transmitting substrate according to a first preferred embodiment of the present invention, a backlight module for a liquid crystal display is taken as an example, and first, as shown in fig. 1, an alkali-free glass sheet having a transmittance of 80% or more in ultraviolet light, full-band visible light, and infrared light with a wavelength of 300nm to 1000nm is used as a light-transmitting substrate body 2, so that the light-transmitting substrate body 2 is not easily melted or deformed even in a high-temperature environment of a reflow furnace. For the sake of convenience, the transparent substrate body 2 is referred to as a mounting surface 20 on the upper side of the drawing, and the bottom surface 21 is defined opposite to the mounting surface 20. In step 70 shown in fig. 6, a driving circuit unit 22, which is an example of a metal active array circuit opaque to ultraviolet light, is fabricated on the mounting surface 20 by photolithography; the driving circuit unit 22 is composed of a plurality of thin film transistors arranged in a row, which are called as an ultraviolet light transmitting array substrate 11, by connecting source lines in parallel with each other in a row direction and by connecting gate lines in parallel in a column direction, and solder paste is provided on a drain electrode of each thin film transistor by screen printing.
Then, in step 71, a plurality of microchips are moved one by one to the array of tfts, wherein the microchips 30 are mainly blue mini LED chips, in this embodiment, none of the microchips can easily penetrate the excitation beam with 365nm uv wavelength, thereby forming a set of microchip array 3 capable of blocking the 365nm uv wavelength, any two adjacent microchips 30 in the microchip array 3 are separated from each other by a gap 34 of about 50 microns, and then all the microchips 30 are respectively soldered to the corresponding driving circuit units 22 through the reflow oven, because of the huge transfer, a gap of about 50 microns is formed between any two adjacent microchips 30, any two adjacent microchips 30 in the soldered microchip array 3 are also separated from each other by a gap 34 of about 50 microns, and thereafter, an electric field can be generated by selecting a specific at least one gate line and applying a proper voltage, the semiconductor channel layer between the source and drain is temporarily converted into a conductor so that a driving signal can be inputted from the source line to light each microchip 30.
Referring to fig. 2 and 3, next, step 72 is to coat a photoresist layer on the arrangement surface 20, thereby forming a photosensitive layer 4 covering the microchip array 3 and the driving circuit 22 on the whole and filling the gap 34 in the microchip array 3; and in step 73, using the microchip array 3 and the driving circuit 22 as a mask, and using ultraviolet light with a wavelength of 365nm as an excitation beam to irradiate upwards from the bottom surface 21 direction, and performing a photolithography process on the photosensitive layer 4, so that the photosensitive layer 4 which is not shielded by the microchip array 3 and the driving circuit 22 is exposed by the excitation beam to form an exposed photosensitive layer 42; in contrast, the photosensitive layer 4 shielded by the microchip array 3 and the driving circuit 22 is not irradiated with the excitation light beam and is referred to as an unexposed photosensitive layer 44.
The exposed photosensitive layer 42 is modified by photochemical reaction after being irradiated by the ultraviolet light, and can react with and be dissolved in a developing solution; then, in step 74, the exposed photosensitive layer 42 is developed with a developing solution to expose the hollow area including the gap 34 and leave the unexposed photosensitive layer 44 on the microchip array 3 and the driving circuit 22. Even if the microchips 30 are not perfectly aligned during the huge movement, the hollowed-out areas are perfectly distributed according to the layout positions of the microchips 30 without any distortion because the microchips 30 are used as a mask. That is, even if the bonding position of the microchip 30 is slightly deviated by, for example, 10 μm, the gap of the adjacent microchips remains 40 μm.
Referring to fig. 4 and 5, in step 75, a hollow area of the uv-transparent array substrate 11 including the gap 34 is filled with a photosensitive black polymer resin using a negative photoresist as a base, wherein the photosensitive black polymer resin is doped with a light-shielding material 5 such as iron oxide, graphite, graphene, aluminum oxide, lead-halogen perovskite, hydrocarbon rubrene (rubrene), black rubber, or black silica gel, which is opaque to infrared light and can absorb uv light with a wavelength of 365nm and can be cured by a photochemical crosslinking reaction when absorbing uv light. Then, in step 76, the 365nm ultraviolet light is used to fully expose the photo-sensitive black polymer resin in the hollow area including the gap 34, so as to cure the photo-sensitive black polymer resin to form the light shielding portion 52, which is illustrated as a surrounding grid-shaped wall, and modify the unexposed photo-sensitive layer 44 originally located on the microchip array 3 and the driving circuit 22.
At step 77, the original unexposed photosensitive layer 44 which has been modified is removed by development to expose the microchip array 3 and the recess 51 of the driving circuit, and the light-shielding portion 52 is formed, so that not only the microchip is not easy to irradiate adjacent cells due to the doping of the optically-shielding material, but also the light-shielding portion 52 is precisely formed at every interval according to the layout shape of the microchip no matter whether the microchip 30 is installed or not, so that the product manufacturing yield of the whole optical component is greatly improved, and the production efficiency is also improved. In step 78, each of the recesses 51 is filled with the fluorescent material layer 32, which is illustrated as red fluorescent glue 321 (forming a red sub-pixel), green fluorescent glue 322 (a green sub-pixel), and unfilled fluorescent glue (a blue sub-pixel), as required, thereby forming three primary colors of full color.
Finally, in step 79, the transparent protection unit 6, which is an example of a transparent protection layer, is formed by covering the whole surface of the mounting surface 20 with an epoxy resin having the characteristics of white light, visible light, high light transmittance, high refractive index, heat resistance, moisture resistance, insulation, chemical stability, etc., and the microchip array 3, the light shielding portion 52 and the driving circuit unit 22 are hermetically sealed on the ultraviolet light transmitting array substrate 11 to form the optical assembly 1, thereby avoiding the adverse effects caused by moisture and oxygen.
In the manufacturing method of the embodiment, the formed driving circuit and the microchip array are used as the optical shield to precisely form the hollow area, and then the optical shielding material is filled into the hollow area, so that the light shielding parts of the grid-shaped enclosing wall can be precisely formed at the microchip gaps according to the arrangement and installation position of each microchip, thereby not only reducing the manufacturing cost of a photomask and the manufacturing cost of a photoetching process to reduce the cost, but also fully playing the advantage of chip miniaturization and synchronously improving the resolution of the optical component.
In addition, because the array optical assembly of this embodiment has blue, green and red sub-pixels, it can select to light three sub-pixels simultaneously to provide white light as the light source of the liquid crystal display, and also can select to light one or two sub-pixels according to the requirements of the liquid crystal display screen to provide light sources of different colors, so as to achieve the additional effects of saving power and improving contrast, and make the liquid crystal display designer change more complicated driving method to obtain better display quality, even add a gray scale control circuit to be used as a low-level display alone.
Second preferred embodiment
The active array substrate of the present invention is often mounted with other optoelectronic devices to form an array electronic device with other functions, and the second preferred embodiment of the present invention is described below, and the same parts in this embodiment as the above preferred embodiments are not described herein again, and similar components are also referred to with similar names and labels, and only the differences are explained. Referring to fig. 7, the optical component 1 ' in this embodiment is illustrated as a fingerprint recognition panel, wherein the plurality of microchips in the microchip array 3 ' are photo-sensing chips 332 ' illustrated as infrared photo-sensing microchips.
The fingerprint identification panel in this embodiment may emit infrared light by an infrared light source 7 ', and then reflect by the grooves and lines of the surface skin of the finger, and then drive the photo-sensing chips 332' to receive to generate the fingerprint sensing signal, or only drive the photo-sensing chips 332 'to receive the infrared light naturally emitted from the finger, because the lines of the surface skin of the finger slightly shield the infrared light, a plurality of adjacent photo-sensing chips 332' will receive infrared light of different intensities, thereby generating the fingerprint sensing signal.
In this embodiment, the photo-sensing chips 332 'are located in the respective recesses 51', and the black infrared-opaque light-shielding portions 52 'are disposed between the adjacent photo-sensing chips 332', so that the photo-sensing chips 332 'hardly receive the scattered infrared light outside the opening angle of the recesses 51', and thus when the chip is miniaturized to reduce the size, more cells can be arranged within the range of one finger to improve the resolution, and meanwhile, the optical assembly 1 ″ has a high signal-to-noise ratio and excellent sensitivity, and has a competitive advantage of excellent performance in the market.
Third preferred embodiment
The third preferred embodiment of the present invention is described below, the same parts in this embodiment as those in the second preferred embodiment are not described herein again, similar components are also given similar names and reference numerals, and only the differences are explained. Referring to fig. 8, in order to obtain a stable signal transmission quality, the optical component 1 ″ of the present embodiment is used as an infrared light signal receiver, and a prism sheet 61 having a convex lens microstructure 611 ″ is attached to a light transmission surface 60 ″ of the transparent protection unit 6 ″ of the optical component 1 ″ away from the light sensing chip 332 ″, which has a light collecting effect such that the light sensing chip 332 ″, which is originally irradiated to the light shielding portion 52 ″, can also receive an infrared light signal with more luminous flux; and a uniform diffusion sheet 62 "with diffusion particles 621" is attached to make the illumination of the infrared light on the optical assembly 1 "more uniform.
The optical component of the embodiment enables the brightness of the emitted and received infrared light to be more uniform by attaching the uniform diffusion sheet on the surface of the transparent packaging layer, so as to obtain more stable optical signal transmission quality, and the optical component of the embodiment has more market competitiveness, thereby achieving the other purpose of the invention.
In summary, the invention fills the hollow-out area outside the microchip array and the driving circuit on the microchip array optical component with the light-shielding part of the latticed fence wall after the microchip array is welded on the driving circuit, and the problem of poor electrical connection caused by the obstruction of the light-shielding part of the latticed fence wall when a large amount of microchip array is transferred to the driving circuit is solved; moreover, the microchip array and the driving circuit which are welded are used as shielding, and a hollow area is formed by a photoetching method, so that the cost of a photomask and a photoetching process is saved; the formed hollow area is used for accurately filling the shading parts of the latticed enclosing walls, so that adjacent microchips can be isolated from each other without mutual interference, the signal-to-noise ratio of the microchip array optical assembly is improved, and the microchip array optical assembly has better market competitiveness.
Of course, in the above preferred embodiments, the phosphor can be formed by two photo-mask photolithography processes, and the grid-shaped walls can be precisely filled by ink-jet method, and the above two manufacturing processes can be changed according to the requirements of the embodiments, without affecting the implementation of the present invention.
Claims (8)
1. An optical assembly having an ultraviolet light transmissive substrate with a microchip array, comprising:
an ultraviolet transmitting array substrate, which has a transmitting substrate body and a group of driving circuit units, wherein the transmitting substrate body can at least be penetrated by ultraviolet exciting light with a specific wavelength at a penetrating part, and has a setting surface for setting the driving circuit units and a bottom surface opposite to the setting surface;
a group of microchip arrays capable of blocking the ultraviolet excitation light, which comprises a plurality of microchips which are arranged at intervals with at least one gap and are respectively driven by the driving circuit unit, wherein each microchip is used for emitting and/or receiving at least one light ray, and each microchip can block the ultraviolet excitation light from penetrating;
a light shielding part filled in the gap; and
a transparent protection unit covering the microchip array and the driving circuit unit for hermetically sealing the microchip array on the ultraviolet-transmitting array substrate.
2. The optical assembly of claim 1, wherein the microchip array comprises at least one led tube emitting light of one wavelength.
3. The optical assembly of claim 1, wherein the microchip comprises at least one photo-sensing die.
4. The optical assembly of claim 1, wherein the light-blocking dopant comprises a material selected from the group consisting of iron oxide, graphite, graphene, aluminum oxide, carbon black, lead halogen perovskites, hydrocarbon rubrene, and rubber light-blocking materials.
5. The optical assembly of claim 1, further comprising at least one layer of phosphor material disposed on at least one of said microchips.
6. The optical assembly of claim 1, further comprising at least one light diffusing element disposed on the light transmitting surface of the transparent protective element.
7. A method of making an optical assembly having an array of microchips with an ultraviolet light transmitting substrate, comprising the steps of:
(a) forming a group of driving circuit units on a transparent substrate body, wherein the transparent substrate body is at least penetrated by ultraviolet excitation light with a specific wavelength at a penetrating part and is provided with a setting surface for setting the driving circuit units and a bottom surface opposite to the setting surface;
(b) welding a group of microchip arrays comprising a plurality of microchips onto the driving circuit unit, wherein the microchips are arranged at intervals with at least one gap and are respectively driven by the driving circuit unit, each microchip is used for emitting and/or receiving at least one light ray, and each microchip can block the ultraviolet excitation light from penetrating;
(c) forming a photosensitive layer covering the microchip array, the gap and the driving circuit;
(d) exposing the photosensitive layer from the bottom surface with a light beam at least including the ultraviolet excitation light, thereby modifying the photosensitive layer in the gap;
(e) removing the photosensitive layer modified by the light beam to form a hollow area in each of the spaced areas;
(f) filling the hollow area with a polymer resin doped with at least one optical rotation shielding material, and irradiating the polymer resin with a curing beam to form a light shielding part corresponding to the gap;
(g) removing the photosensitive layer shielded by the shield to expose the microchip array; and
(h) forming a transparent protective layer for allowing the light to pass through and at least covering the microchip array and the driving circuit.
8. The method of claim 7, further comprising a step (i) of disposing at least one phosphor gel over said microchip array between steps (g) and (h).
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| CN202010379442.7A CN113629091A (en) | 2020-05-08 | 2020-05-08 | Method for manufacturing microchip array optical assembly with ultraviolet light transmitting substrate and assembly |
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| CN202010379442.7A CN113629091A (en) | 2020-05-08 | 2020-05-08 | Method for manufacturing microchip array optical assembly with ultraviolet light transmitting substrate and assembly |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20180166429A1 (en) * | 2016-12-13 | 2018-06-14 | Hong Kong Beida Jade Bird Display Limited | Mass Transfer Of Micro Structures Using Adhesives |
| US20180175262A1 (en) * | 2016-12-21 | 2018-06-21 | Glo Ab | Micro-lensed light emitting device |
| CN209344079U (en) * | 2018-11-14 | 2019-09-03 | 易美芯光（北京）科技有限公司 | A kind of MICRO light-emitting diode display part |
| US20190273179A1 (en) * | 2018-03-02 | 2019-09-05 | Sharp Kabushiki Kaisha | Image display device |
| CN209561408U (en) * | 2019-04-11 | 2019-10-29 | 中山市立体光电科技有限公司 | A kind of full-color LED packaging of microminiature |
| US20200075816A1 (en) * | 2018-08-30 | 2020-03-05 | Oregon State University | Micro-led apparatus with enhanced illumination, and method for forming such |
-
2020
- 2020-05-08 CN CN202010379442.7A patent/CN113629091A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20180166429A1 (en) * | 2016-12-13 | 2018-06-14 | Hong Kong Beida Jade Bird Display Limited | Mass Transfer Of Micro Structures Using Adhesives |
| US20180175262A1 (en) * | 2016-12-21 | 2018-06-21 | Glo Ab | Micro-lensed light emitting device |
| US20190273179A1 (en) * | 2018-03-02 | 2019-09-05 | Sharp Kabushiki Kaisha | Image display device |
| US20200075816A1 (en) * | 2018-08-30 | 2020-03-05 | Oregon State University | Micro-led apparatus with enhanced illumination, and method for forming such |
| CN209344079U (en) * | 2018-11-14 | 2019-09-03 | 易美芯光（北京）科技有限公司 | A kind of MICRO light-emitting diode display part |
| CN209561408U (en) * | 2019-04-11 | 2019-10-29 | 中山市立体光电科技有限公司 | A kind of full-color LED packaging of microminiature |
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