CN111133499A - Led-oled混合自发射显示器 - Google Patents

Led-oled混合自发射显示器 Download PDF

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Publication number
CN111133499A
CN111133499A CN201880034823.2A CN201880034823A CN111133499A CN 111133499 A CN111133499 A CN 111133499A CN 201880034823 A CN201880034823 A CN 201880034823A CN 111133499 A CN111133499 A CN 111133499A
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China
Prior art keywords
micro
leds
led display
micro leds
display chip
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Granted
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CN201880034823.2A
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CN111133499B (zh
Inventor
张磊
李起鸣
欧放
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Hefei Xianyao Display Technology Co.,Ltd.
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Hong Kong Beida Jade Bird Display Ltd
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    • G09G3/06—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of a single character by selection from a plurality of characters, or by composing the character by combination of individual elements, e.g. segments using a combination of such display devices for composing words, rows or the like, in a frame with fixed character positions using controlled light sources
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    • G09G3/14—Semiconductor devices, e.g. diodes
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Abstract

无机LED和有机LED被集成在单个芯片中。在集成多色微LED显示面板中，不同颜色的微LED的阵列与对应的驱动器电路装置被集成在一起。微LED的一些颜色是无机微LED，而其他颜色是有机微LED。可以基于效率来选择无机还是有机，例如，将无机微LED用于蓝色像素，将有机微LED用于红色像素和绿色像素。在一种方法中，首先在支撑基板上制造像素驱动器的阵列。然后，将微LED的多个层阶堆叠在基底基板之上。首先制造包含无机微LED的层阶，每个层阶一种颜色。然后，在堆叠的顶部处制造包含所有有机微LED的单个层阶。

Description

LED-OLED混合自发射显示器
相关申请的交叉引用
本申请根据35U.S.C.§119(e)要求于2017年04月13日提交的、题目为“LED-OLEDHybrid Self-Emissive Display”的美国临时专利申请序列号62/484,979的优先权。上述所有主题均通过引用以其整体并入本文。
技术领域
本公开总体上涉及集成多色LED显示芯片。
背景技术
结合了薄膜晶体管(TFT)技术的有源矩阵液晶显示器(LCD)和有机发光二极管(OLED)显示器在当今的商用电子设备中变得越来越流行。这些显示器广泛用于膝上型个人计算机、智能电话和个人数字助理。数百万个像素一起在显示器上创建图像。TFT充当开关以分别接通和关断每个像素，从而使像素亮或暗，这可以方便、有效地控制每个像素和整个显示器。
然而，常规的LCD显示器的光效率低，导致高功耗和有限的电池操作时间。虽然有源矩阵有机发光二极管(AMOLED)显示面板通常比LCD面板消耗更少的功率，但AMOLED显示面板仍然可以是电池操作设备中的主要功率消耗者。为了延长电池寿命，期望降低显示面板的功耗。
常规的无机半导体发光二极管(LED)已经显示出更好的光效率，这使得有源矩阵LED显示器更适合电池操作的电子设备。驱动器电路装置和发光二极管的阵列用于控制数百万个像素，从而在显示器上绘制图像。然而，将数千甚至数百万个微LED与像素驱动器电路阵列集成在一起非常具有挑战性。
因此，需要更好的显示面板。
发明内容
本公开通过将无机LED和有机LED两者集成在单个芯片中，克服了现有技术的限制。
一个示例是集成多色微LED显示面板，其中不同颜色的微LED的阵列与对应的驱动器电路装置集成在一起。微LED的一些颜色由无机微LED实现，而其他颜色由有机微LED实现。可以基于效率来选择无机还是有机，例如，将无机微LED用于蓝色像素，将有机微LED用于红色和绿色像素。
在一种方法中，首先在支撑基板上制造像素驱动器的阵列。然后，将微LED的多个层阶堆叠在基底基板之上。首先制造包含无机微LED的层阶，每个层阶一种颜色。然后将包含所有有机微LED的单个层阶制造为堆叠的顶部层阶。
其他方面包括与以上任何方面有关的组件、设备、系统、改进、方法、过程、应用和其他技术。
附图说明
本公开的实施例具有其他优点和特征，当结合附图考虑时，根据以下详细描述和所附权利要求，这些优点和特征将变得更加明显，其中：
图1是根据一个实施例的显示面板的像素的电路图。
图2A和图2B是根据各种实施例的集成多色LED显示面板的几个像素的截面图。
图3是根据另一个实施例的集成多色LED显示面板的几个像素的截面图。
图4是根据又一个实施例的集成多色LED显示面板的几个像素的截面图。
图5A和图5B是根据两个实施例的共用电极的俯视图。
图6是图示根据一个实施例的用于光学隔离的结构的截面图。
图7是根据一个实施例的具有像素的阵列的示例显示面板的俯视图。
附图仅出于说明的目的描绘了各种实施例。本领域技术人员将从下面的讨论中容易地认识到，在不脱离本文描述的原理的情况下，可以采用本文所示的结构和方法的备选实施例。
具体实施方式
附图和以下描述仅通过说明的方式涉及优选实施例。应当注意，根据下面的讨论，在不脱离所要求保护的原理的情况下，本文公开的结构和方法的备选实施例将容易地被认为是可以采用的可行备选方案。
图1是显示面板的像素的电路图，该显示面板包括像素驱动器和诸如微LED的LED140。微LED通常具有50微米(um)或更小的横向尺寸，并且可以具有小于10um、甚至仅几um的横向尺寸。在该示例中，像素驱动器包括两个晶体管和一个电容器130，其中一个晶体管是控制晶体管120，另一个晶体管是驱动晶体管110。在该示例中，控制晶体管120被配置成：其栅极连接到扫描信号总线150，其一个源极/漏极连接到数据信号总线170，并且另一个漏极/源极连接到存储电容器130和驱动晶体管110的栅极。驱动晶体管110的一个源极/漏极连接到电压源Vdd，另一个漏极/源极连接到LED 140的p-电极。LED 140的n-电极连接到电容器130和地。在该示例中，当扫描信号150打开控制晶体管120的栅极时，数据信号170对存储电容器130充电并且设置驱动晶体管110的栅极电压，该栅极电压控制流过LED 140的电流。这里，存储电容器130用来“维持”驱动晶体管110的栅极电压，从而在扫描信号150设置其他像素的时间期间，维持流过LED 140的电流。其他像素驱动器设计将是明显的，例如，如美国专利申请号12/214,395(“Monolithic Active or Passive Matrix LED ArrayDisplay Panels and Display Systems Having the Same”)中所描述的，其通过引用并入本文。
以下示例主要使用集成微LED显示芯片，其中无机和有机微LED的(多个)阵列与TFT或CMOS像素驱动器集成在一起，但是这些仅仅是示例，并且所描述的技术不限于该特定应用。无机微LED的示例包括基于GaN的UV/蓝色/绿色微LED、基于AlInGaP的红色/橙色微LED以及基于GaAs或InP的红外(IR)微LED。有机微LED的示例包括：用于空穴传输材料的基于三苯胺衍生物(TPD)的材料、用于电子传输材料的噁二唑衍生物(PBD)、用于蓝色发射的主体材料Alq3和掺杂剂TBP、用于绿色发射的香豆素545T或DMQA、用于黄色发射的红荧烯、以及用于红色发射的DCM或Ir(piq)3。无机微LED和其他微结构的附加示例在以下美国专利申请号中描述：15/135,217，“Semiconductor Devices with Integrated Thin-FilmTransistor Circuitry”；15/269,954，“Making Semiconductor Devices with AlignmentBonding and Substrate Removal”；15/269,956，“Display Panels with IntegratedMicro Lens Array”；15/272,410，“Manufacturing Display Panels with IntegratedMicro Lens Array”，以及15/701,450，“Multi-Color Micro-LED Array Light Source”。前述所有美国专利申请号均通过引用以其整体并入本文。
图2A是根据一个实施例的集成多色LED显示面板的几个像素的截面图。在图2A中，在支撑基板102上制造个体驱动器电路的阵列。图2A中所示的黑色矩形110表示到驱动器电路的电连接，例如图1中的驱动晶体管110和LED 140之间的连接。为方便起见，这些连接110还可以被称为驱动器电路110或像素驱动器110。驱动器电路110标有后缀R、G、B，因为它们分别对应于红色、绿色和蓝色像素。像素驱动器110的阵列电连接到无机微LED 141和有机微LED 142的混合。这些微LED 141、142也标有后缀R、G、B以指示它们的颜色。在该示例中，无机LED 141用于蓝色像素，有机LED 142用于红色和绿色像素，因为不同类型的LED在这些波长下具有更高的外部量子效率。通过使用有机和无机微LED的混合，可以提高整体效率。例如，可以将显示面板设计成使得每种颜色的微LED具有至少15％的外部量子效率(EQE)。蓝色无机LED可以具有50％或更高的EQE。红色和绿色有机LED可以具有15％或更高的EQE。
在该示例中，微LED 141、142被包含在不同的层阶151、152中，层阶151、152堆叠在基板和像素驱动器之上。底部层阶151包含无机微LED 141B，顶部层阶包含有机微LED142R、142G。哪种颜色位于哪个层阶中可以根据设计进行变化。为了方便起见，“上”用来意指背离基板102，“下”意指朝向基板，并且相应地解释诸如顶部、底部、上方、下方、之下、下面等的其他方向性术语。
以最左边的微LED 141B为例，无机微LED由外延结构形成。示例包括III-V族氮化物、III-V族砷化物、III-V族磷化物和III-V族锑化物外延结构。上接触金属焊盘146电连接到微LED 141的顶部，并且还根据需要，使用穿过任何中间层阶的过孔147而电连接到共用电极165。对于微LED 141B，过孔147穿过层阶151的其余部分连接到共用电极165，其通过有机层阶152中的开口区域进行接触。下接触金属焊盘148电连接到微LED 141B的底部，并且还根据需要，使用穿过任何中间层阶的过孔149而电连接到对应的像素驱动器110。因为微LED 141B在底部层阶中，所以不存在中间层阶，也没有使用过孔149。
对于最右边的有机微LED 142G，过孔149穿过中间层阶151将下接触金属焊盘148电连接到对应的像素驱动器110。不需要过孔将微LED 142G的顶部接触连接到共用电极165。在该示例中，每个微LED 141、142连接到单个共用电极165，但这不是必需的，这在以下所示的备选设计中将很明显。
在该示例中，用于无机LED的层阶151填充有材料153，使得相邻层阶之间的界面157是平面的。这促进下一个层阶的制造。填充材料153的一个示例是二氧化硅，其既是非导电的又是透明的。这提供了微LED和过孔之间的电隔离，但是还允许由较低层阶中的微LED产生的光传播穿过该层阶。填充材料153的另一个示例是氮化硅。有机微LED 142的顶部层阶152还可以填充有材料154，例如，类似于在无机层中使用的那些电介质材料或聚合物材料。用于每个层阶的填充物153、154不必是单一的均质材料。还可以使用材料或结构的组合。不管详细结构如何，优选地，每个层阶在横向位于较低层阶的微LED上方的区域中是透明的，使得由较低层阶的微LED产生的光能够传播穿过这种区域。
更详细地，驱动器电路装置如下制造。支撑基板102是在其上制造个体驱动器电路110的阵列的基板。在一个实施例中，基板102是Si基板。在另一个实施例中，支撑基板102是透明基板，例如玻璃基板。其他示例基板包括GaAs、GaP、InP、SiC、ZnO和蓝宝石基板。驱动器电路110形成个体像素驱动器以驱动微LED。基板102上的电路装置包括到每个个体像素驱动器的接触110，该接触110突出到表面。该电路装置还可以包括用于每个个体像素驱动器的共用电极接触。每个微LED还具有两个接触：一个接触连接到像素驱动器，另一个接触接地(即，共用电极)。
在未示出的备选实施例中，驱动器电路装置可以包括除CMOS驱动器电路以外的驱动器电路。作为一个示例，驱动器电路装置可以包括薄膜晶体管(TFT)驱动器电路。作为另一个示例，驱动器电路装置可以是使用III-V族化合物半导体的电路装置。
为了清楚起见，图2A仅示出了6个微LED和对应的像素驱动器。应当理解，可以使用任何数目的微LED和像素驱动器。在完全可编程的显示面板中，LED和驱动器电路以阵列布置，以形成可单独寻址的像素(优选为多色像素)的阵列。在备选实施例中，显示面板可以具有更有限的可编程性，并且像素可以以不同的几何形状布置。另外，驱动器电路与LED之间不必一一对应。例如，可以有两个或更多个LED连接到相同的像素驱动器输出以创建冗余，使得如果其中一个LED发生故障，其余的LED仍可以点亮像素。
微LED还可以以不同的方式分布到层阶中，还可以有不同数目的层阶。在一种方法中，每个层阶仅包括无机微LED或仅包括有机微LED，但不包括两者。在一种制造方法中，首先在堆叠的底部制造包含无机微LED的层阶，然后在这些之后是包含有机微LED的顶部层阶。无机层阶可以被制造为具有每个层阶仅一种颜色的微LED，然后制造包含所有有机微LED的单个顶部层阶。
颜色是由无机微LED还是由有机微LED产生的选择也可以变化。颜色可以包括紫外、蓝色、绿色、橙色、红色和红外。这里，诸如光、光学和颜色的术语旨在包括紫外和红外两者。在上面的示例中，蓝色由无机微LED产生，红色和绿色由有机LED产生。在一些情况下，较短的波长由无机微LED产生，而较长的波长由有机LED产生。
图2B示出了备选设计，其中并非每个微LED 141、142都在结构的最顶部处连接到共用电极。而是，每个层阶151、152的微LED 141、142通过位于特定层阶之上的结构167电连接到共用电极164。在该示例中，红色微LED 142R通过结构167R连接，绿色微LED 142G通过结构167G连接，蓝色微LED 141B通过结构167B连接。将不同的微LED 141、142连接到彼此不连接的共用电极允许对微LED的单独偏置。
图3是根据另一个实施例的集成多色LED显示面板的几个像素的截面图。在之前的图2中，由无机微LED产生一种颜色(蓝色)，由有机微LED产生另外两种颜色。在图3中，由无机微LED 141产生两种颜色(蓝色和红色)，由有机微LED 142产生第三种颜色(绿色)。在该示例中，不同颜色的无机LED 141B、141R被制造在分离的层阶151B、151R中，因此共有3个层阶151、152。无机微LED 141B、141R具有上接触金属焊盘146和下接触金属焊盘148。一个接触焊盘148连接到像素驱动器110，另一个接触焊盘146连接到共用电极165，必要时使用过孔147、149。有机微LED 142G具有下接触金属焊盘148，以连接到像素驱动器110。由于有机微LED位于顶部层阶152中，所以LED的上侧可以直接连接到共用电极165。
图2和图3中所示的结构可以如下制造。首先，在基板102上制造像素驱动器110。然后，制造包含无机微LED 141的层阶151，每个层阶具有一种颜色。通过以下方式制造每个层阶：首先将未图案化的外延层接合到现有结构，将外延层图案化为个体微LED，并且将接合金属层图案化为个体焊盘，然后制造过孔，并且填充并平坦化层阶。使用图3的结构作为示例，用于无机蓝色微LED的层阶151B如下制造。首先，将金属接合层添加到用于蓝色微LED141B的未图案化的外延层以及与像素驱动器接触的基板。这些金属接合层用于将外延层接合到基板，从而与像素驱动器电接触。在去除外延基板之后，外延层和金属接合层被图案化以形成个体微LED 141B和下接触金属焊盘148。上接触金属焊盘146也被添加。添加填充材料153并将其平坦化。制造过孔147、149。重复该过程以形成用于无机红色微LED的层阶151R。有关更多细节，参见国际专利申请号PCT/US2018/023172，“Making SemiconductorDevices by Stacking Strata of Micro LEDS”，通过引用以其整体并入本文。
在制造了所有无机层阶151之后，制造包含所有有机微LED 142的单个顶部层阶152。使用旋涂法逐层沉积有机LED层(包括电子注入材料、电子传输材料、具有不同掺杂剂的发射层、空穴传输材料和空穴注入材料)，以在垂直方向上形成二极管结构。然后，将有机LED层图案化并刻蚀成个体台面。之后，涂覆另一种绝缘聚合物材料以进行平坦化。在有机LED台面的顶部以及存在其他层阶的过孔的区域中打开接触窗口。最后，沉积顶部共用阴极接触165。
在备选方法中，有机微LED可以与无机微LED制造在相同的层中。图4示出了这种设计。这里，首先在基板102和像素驱动器110B之上制造蓝色无机微LED 141B。这些之后是位于蓝色LED之间的红色和绿色有机微LED 142。共用电极165电连接到微LED 141、142。没有单独的层阶或穿过层阶的过孔。
在图2-图4中，共用电极165可以是(不透明的)金属迹线的网格，如图5A中所示。图5A是俯视设备的俯视图。图5A示出了由大正方形表示的三个微LED 140R、140G、140B。这些微LED中的每个微LED具有过孔和金属焊盘的结构143，其将微LED的顶部电连接到层阶的堆叠的顶部。这些在图5A中由小正方形143表示。长矩形165是用作共用阴极的金属迹线，其电连接到过孔/金属焊盘143。
备选地，共用电极165可以是透明电极，诸如氧化铟锡，如图5B中所示。图5B也是示出微LED 140R、140G、140B及其互连143的俯视图。在该示例中，共用电极165是由边界165限定的矩形的整体。覆盖所有微LED是可接受的，因为电极165是透明的。矩形环带164是连接到电路装置的共用阴极金属焊盘。注意，共用电极165在所有层阶上方，而金属焊盘164在所有层阶下方。它们通过过孔163电连接。
图6图示了提供不同像素的光学隔离的附加结构。在该示例中，红色、绿色和蓝色像素被分组为多色像素610，并且层阶中的结构用于使相邻的像素光学地分离。这可以减少相邻的多色像素610之间的串扰。在图6中，该结构是不透明(吸收性)分隔物622的网格。备选地，结构622可以是反射性的，其还可以起到增加由微LED产生的光的方向性和效率的作用。用于每个微LED的下接触金属焊盘也可以是反射性的。
图7是根据一个实施例的示例微LED显示面板700的俯视图。显示面板700包括数据接口710、控制模块720和像素区域740。数据接口710接收定义要显示的图像的数据。该数据的(多个)来源和格式将根据应用而变化。控制模块720接收输入的数据并将其转换为适于驱动显示面板中的像素的形式。控制模块720可以包括：数字逻辑和/或状态机，以从接收到的格式转换为适于像素区域740的格式；移位寄存器或其他类型的缓冲器和存储器，以存储和传送数据；数模转换器和电平移位器；以及包括时钟电路装置的扫描控制器。
像素区域740包括像素的阵列。像素包括与像素驱动器单片集成的微LED 734，例如如上所述。在该示例中，显示面板700是彩色RGB显示面板。它包括按列布置的红色、绿色和蓝色像素。列732R是红色像素，列732G是绿色像素，列732B是蓝色像素。在每个像素内，LED 734由像素驱动器控制。根据之前所示的实施例，像素与电源电压(未示出)接触并且经由接地焊盘736与地接触，并且还与控制信号接触。尽管未在图7中示出，LED的p电极和驱动晶体管的输出位于LED 734的下方，并且它们通过接合金属电连接。根据之前描述的各种实施例，形成(在LED的p电极与像素驱动器的输出之间的)LED电流驱动信号连接、(在n电极与系统接地之间的)接地连接、(在像素驱动器的源极与系统Vdd之间的)Vdd连接以及到像素驱动器的栅极的控制信号连接。
图7仅是代表图。其他设计将是明显的。例如，颜色不必是红色、绿色和蓝色，并且每个颜色像素的数目不必相等。它们也不必按列或条带排列。例如，一组四个彩色像素可以被布置成2x2正方形。还可以将个体像素单元布置成共享行或列寻址，从而减少行或列迹线的总数目。作为一个示例，除了图7中所示的像素的方阵的布置之外，还可以使用像素的六边形矩阵的布置来形成显示面板700。
在一些应用中，不需要像素的完全可编程的矩形阵列。具有各种形状和显示器的显示面板的其他设计还可以使用本文描述的设备结构来形成。一类示例是特殊应用，包括标牌和汽车。例如，可以以星形或螺旋形布置多个像素以形成显示面板，并且可以通过接通和关断LED来在显示面板上产生不同的图案。另一个特殊的示例是汽车前灯和智能照明，其中某些像素被分组在一起以形成各种照明形状，并且每组LED像素可以通过个体像素驱动器接通或关断或以其他方式进行调整。
甚至每个像素内的设备的横向布置也可以变化。在图2-图4中，LED和像素驱动器垂直布置。每个LED位于对应的像素驱动器电路“之上”。其他布置也是可能的。例如，像素驱动器还可以位于LED的“后面”、“前面”或“旁边”。
可以制造不同类型的显示面板。例如，显示面板的分辨率通常可以在8x8至3840x2160之间。常见的显示分辨率包括：具有320x240分辨率和4：3的纵横比的QVGA，具有1024x768分辨率和4：3的纵横比的XGA，具有1280x720分辨率和16：9的纵横比的HD，具有1920x1080分辨率和16：9的纵横比的FHD，具有3840x2160分辨率和16：9的纵横比的UHD，以及具有4096x2160分辨率的4K。还可以各种像素大小，范围从亚微米及以下到10mm及以上。整个显示区域的大小还可以变化很大，对角线的范围从小至数十微米或更小到数百英寸或更大。
不同的应用对光学亮度也将有不同的要求。示例应用包括直接观看的显示屏、用于家庭/办公室投影仪的光引擎以及便携式电子设备(诸如智能电话、膝上型个人计算机、可穿戴电子设备和视网膜投影)。功耗可以从视网膜投影仪的低至几毫瓦到大屏幕户外显示器、投影仪和智能汽车前灯的高达数千瓦。在帧速率方面，由于无机LED的快速响应(纳秒)，对于小分辨率，帧速率可以高达KHz，甚至MHz。
尽管详细描述包含许多细节，但是这些细节不应当被解释为限制本发明的范围，而仅是用于说明本发明的不同示例和方面。应当理解，本发明的范围包括上面未详细讨论的其他实施例。例如，上述方法可以应用于除LED之外的功能设备与除像素驱动器之外的控制电路装置的集成。非LED器件的示例包括垂直腔表面发射激光器(VCSEL)、光电探测器、微机电系统(MEMS)、硅光子器件、功率电子器件和分布式反馈激光器(DFB)。其他控制电路装置的示例包括电流驱动器、电压驱动器、跨阻放大器和逻辑电路。
对本领域技术人员清楚的是，在不脱离如所附权利要求限定的本发明的精神和范围的情况下，可以对本文公开的本发明的方法和装置的布置、操作和细节进行各种其他修改、改变和变化。因此，本发明的范围应当由所附权利要求及其合法等同物确定。

Claims (20)

1.一种集成多色微LED显示芯片，包括：
基板；
像素驱动器的阵列，由所述基板支撑；以及
不同颜色的微LED的多个阵列，由所述基板支撑并且电连接到所述像素驱动器的阵列，其中所述多个阵列中的至少一个阵列包括第一颜色的有机微LED，并且所述多个阵列中的另一个阵列包括不同颜色的无机微LED。
2.根据权利要求1所述的集成多色微LED显示芯片，其中所述多个阵列包括红色微LED的阵列、绿色微LED的阵列和蓝色微LED的阵列。
3.根据权利要求2所述的集成多色微LED显示芯片，其中所述蓝色微LED是无机微LED，并且所述红色微LED和所述绿色微LED是有机微LED。
4.根据权利要求3所述的集成多色微LED显示芯片，其中所述蓝色微LED是基于GaN的无机微LED。
5.根据权利要求2所述的集成多色微LED显示芯片，其中所述蓝色微LED和所述红色微LED是无机微LED，并且所述绿色微LED是有机微LED。
6.根据权利要求1所述的集成多色微LED显示芯片，其中所述不同颜色的微LED是紫外、蓝色、绿色、橙色、红色或红外微LED。
7.根据权利要求1所述的集成多色微LED显示芯片，其中所述不同颜色的微LED被布置成两个或更多层阶，所述两个或更多层阶被堆叠在所述基板和所述像素驱动器之上，在相邻的层阶之间具有平面界面，并且相同颜色的所有微LED被包含在所述层阶中的一个层阶中。
8.根据权利要求7所述的集成多色微LED显示芯片，其中每个层阶仅包含无机微LED或仅包含有机微LED，但不包含两者。
9.根据权利要求8所述的集成多色微LED显示芯片，其中包含无机微LED的所述层阶在所述堆叠的底部，并且包含有机微LED的所述层阶在所述堆叠的顶部。
10.根据权利要求7所述的集成多色微LED显示芯片，其中包含无机微LED的每个层阶包含仅单色的无机微LED。
11.根据权利要求7所述的集成多色微LED显示芯片，其中所有有机微LED被包含在单个层阶中。
12.根据权利要求7所述的集成多色微LED显示芯片，其中包含无机微LED的每个层阶包括：
下接触金属焊盘，被电连接到所述微LED的底部；以及
上接触金属焊盘，被电连接到所述微LED的顶部；
其中所述下接触金属焊盘还被电连接到所述像素驱动器的阵列，并且所述上接触金属焊盘还被电连接到共用电极。
13.根据权利要求12所述的集成多色微LED显示芯片，其中所述共用电极包括在所有所述层阶之上的顶部电极，每个上接触金属焊盘通过穿过任何中间层阶的过孔而被电连接到所述顶部电极。
14.根据权利要求12所述的集成多色微LED显示芯片，其中所述共用电极包括用于每个层阶的位于该层阶之上的单独的共用电极结构，用于每个层阶的每个上接触金属焊盘被电连接到用于该层阶的所述共用电极结构。
15.根据权利要求7所述的集成多色微LED显示芯片，其中不同层阶的所述微LED被分组成多色像素，并且所述微LED显示芯片还包括：
在所述层阶中的结构，所述结构将相邻的多色像素光学分离。
16.根据权利要求1所述的集成多色微LED显示芯片，其中所有的所述微LED垂直地定位在位于所述基板和所述像素驱动器上方的单个层中。
17.根据权利要求1所述的集成多色微LED显示芯片，其中所述微LED在任何横向尺寸上都不大于50微米。
18.根据权利要求1所述的集成多色微LED显示芯片，其中每种颜色的所述微LED的阵列具有至少15％的外部量子效率。
19.根据权利要求1所述的集成多色微LED显示芯片，其中所述像素驱动器包括薄膜晶体管像素驱动器或硅CMOS像素驱动器。
20.一种集成多色微LED显示芯片，包括：
基板；
像素驱动器的阵列，由所述基板支撑；以及
红色微LED的阵列、绿色有机微LED的阵列和蓝色无机微LED的阵列，所有的所述微LED的阵列均由所述基板支撑，并且被电连接到所述像素驱动器的阵列；
其中不同颜色的微LED的阵列被布置成两个或更多层阶，所述两个或更多层阶被堆叠在所述基板和所述像素驱动器之上，在相邻的层阶之间具有平面界面，并且所述蓝色无机微LED被包含在所述层阶中的底部层阶中，并且所述绿色有机微LED被包含在所述层阶中的顶部层阶中。
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