TWI702585B - 具有積體薄膜電晶體電路之半導體裝置 - Google Patents

具有積體薄膜電晶體電路之半導體裝置 Download PDF

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TWI702585B
TWI702585B TW105142386A TW105142386A TWI702585B TW I702585 B TWI702585 B TW I702585B TW 105142386 A TW105142386 A TW 105142386A TW 105142386 A TW105142386 A TW 105142386A TW I702585 B TWI702585 B TW I702585B
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tft
led
leds
substrate
layer
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TW201732770A (zh
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磊 張
歐放
李起鳴
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香港商香港北大青鳥顯示有限公司
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Abstract

各種實施例包含一種半導體裝置，其具有與其他非薄膜電晶體(TFT)功能裝置單片整合之TFT電路。一實例係一種積體發光二極體(LED)顯示面板，其中一LED陣列與對應TFT驅動器電路整合。該TFT驅動器電路通常為驅動該等LED之一像素驅動器陣列。

Description

具有積體薄膜電晶體電路之半導體裝置
本發明大體上係關於具有積體薄膜電晶體(TFT)電路之半導體裝置，例如具有與對應TFT像素驅動器整合之磊晶生長發光二極體(LED)之顯示器。
與薄膜電晶體技術組合之主動矩陣液晶顯示器及有機發光二極體(OLED)顯示器在現今商業電子裝置中變得日益流行。此等顯示器廣泛用於膝上型個人電腦、智慧型電話及個人數位助理中。數百萬像素一起產生一顯示器上之一影像。TFT充當個別地接通及切斷各像素以使像素呈現亮色或暗色之開關，其允許方便且高效地控制各像素及整個顯示器。
然而，習知TFT-LCD顯示器及TFT-OLED顯示器遭受低光效率以引起高電力消耗及有限電池操作時間。習知無機半導體發光二極體(LED)已展現優良光效率，其使主動矩陣LED顯示器更適合用於電池操作電子產品。然而，在主動矩陣LED顯示器中，將TFT驅動器電路與發光二極體(LED)組合具有缺點。例如，TFT驅動器電路通常製造於一晶圓上且LED製造於一單獨晶圓上。接著，兩個晶圓上之裝置可由接合晶圓之焊料凸塊連接。替代地，LED可被個別地拾取且放置至含有TFT電路之晶圓上。然 而，此等類型之程序既低效又昂貴。
因此，需要將TFT電路與非TFT電路(例如LED)較佳整合。
各種實施例包含一種半導體裝置，其具有與其他非薄膜電晶體(TFT)功能裝置單片整合之TFT電路。一實例係一種積體LED顯示面板，其中一LED陣列與對應TFT驅動器電路整合。該TFT驅動器電路通常為驅動該等LED之一像素驅動器陣列。
在一態樣中，LED磊晶生長於一基板上以形成含有多個LED晶粒之一LED晶圓。接著，該TFT驅動器電路直接製造至該相同基板上。該TFT像素驅動器陣列電連接至該LED陣列以驅動該等LED。
在另一方法中，該TFT驅動器電路生長於一基板上且該等LED製造於一單獨基板上。接著，該LED晶圓藉由將該等LED接合至該等TFT像素驅動器來覆晶接合至該TFT晶圓。依此方式，該等LED與該等TFT像素驅動器單片整合。
除LED之外，非TFT功能裝置之其他實例亦包含垂直共振腔面射型雷射(VCSEL)、分散式回饋雷射(DFB)、矽光子裝置、光偵測器、微機電系統(MEMS)裝置及電力電子裝置。除TFT驅動器電路之外，TFT電路之其他實例亦包含電流驅動器、電壓驅動器、轉阻放大器、邏輯電路及控制非TFT功能裝置之其他TFT電路。
其他態樣包含組件、裝置、系統、改良方案、包含製造方法之方法及程序、應用及與以上之任何者相關之其他技術。
100:顯示面板
102:基板
103:發光二極體(LED)磊晶層
104:發光二極體(LED)
104A:p型層
104B:n型層
104C:主動區域
105:接地接點
106:導電跡線
108:薄膜電晶體(TFT)像素驅動器
108A:源極
108B:汲極
108C:閘極
108D:非晶矽層
108E:介電區域
112:接點
114:絕緣介電層
117:介電區域
120:顯示面板
122:基板
123:磊晶層
124:發光二極體(LED)
125:接地接點
128:薄膜電晶體(TFT)像素驅動器
132:Vdd接點
140:發光二極體(LED)顯示面板
142:基板
143:磊晶層
144:發光二極體(LED)
145:接地接點
148:薄膜電晶體(TFT)像素驅動器
149:磊晶單元
150:發光二極體(LED)磊晶單元
151:絕緣介電層
152:Vdd接點
160:發光二極體(LED)顯示面板
162:基板
163:磊晶層
164:發光二極體(LED)
165:接地接點
168:薄膜電晶體(TFT)像素驅動器
169:非發光二極體(LED)磊晶單元
170:發光二極體(LED)磊晶單元
172:Vdd接點
200:多色發光二極體(LED)顯示面板
222:藍色發光二極體(LED)
224:藍色發光二極體(LED)
226:藍色發光二極體(LED)
242:紅色磷光體
244:綠色磷光體
252:像素
254:像素
256:像素
300:發光二極體(LED)顯示面板
310:資料介面
320:控制模組
340:像素區域
341:紅色像素
342:綠色像素
343:藍色像素
344:發光二極體(LED)
348:接點
400:顯示面板
410:基板
415:接點
422:薄膜電晶體(TFT)像素驅動器
422A:源極
422B:汲極
422C:閘極
422D:非晶矽層
422E:介電區域
430:接合區域
440:發光二極體(LED)
440A:p型層
440B:n型層
440C:主動區域
446:接點
450:接點
500:顯示面板
502:基板
512:藍色像素
514:綠色像素
516:紅色像素
522:紅色像素
524:綠色像素
526:藍色像素
560:顯示面板
562:薄膜電晶體(TFT)基板
570:透明黏合劑
575:發光二極體(LED)基板
585:抗反射塗層
604:發光二極體(LED)
608:薄膜電晶體(TFT)像素驅動器
610:控制電晶體
620:驅動電晶體
630:儲存電容器
650:掃描信號匯流排線/掃描信號
660:資料信號匯流排線/資料信號
Vdd:供應電壓/電壓供應器
本發明之實施例具有易於自結合附圖之[實施方式]及隨附申請專利範 圍明白之其他優點及特徵，其中：圖1A至圖1D係根據各種實施例之具有整合至LED晶粒上之TFT像素驅動器之顯示面板之不同實例之橫截面圖。
圖2係根據一實施例之使用相同色彩LED及不同色彩磷光體之一多色顯示面板之一實例之一橫截面圖。
圖3係根據一實施例之一實例性LED顯示面板之一俯視圖。
圖4係根據一實施例之具有單片整合至含有TFT驅動器電路之一基板上之LED之一實例性LED顯示面板之一橫截面圖。
圖5A係根據一實施例之經由晶圓接合及基板移除所製造之一多色TFT-LED顯示面板之一橫截面圖。
圖5B係根據一實施例之在不移除基板之情況下藉由晶圓接合所製造之一透明TFT-LED顯示面板之一橫截面圖。
圖6係根據一實施例之一TFT像素驅動器之一電路圖。
圖式描繪僅供說明之各種實施例。熟悉技術者將易於自下列討論認識到，可在不背離本文中所描述之原理之情況下採用本文中所繪示之結構及方法之替代實施例。
相關申請案之交叉參考
本申請案主張2016年4月21日申請之名稱為「Semiconductor Devices with Integrated Thin-Film Transistor Circuitry」之美國專利申請案第15/135,217號之優先權；美國專利申請案第15/135,217號依據35 U.S.C.§ 119(e)主張2015年12月21日申請之名稱為「Monolithically Integrated TFT Driven LED Array Display Panels and Methods of Making Such」之美國臨時專利申請案第62/270,375號之優先權。以上全部申請案之主體之全文以引用方式併入本文中。
圖式及下列描述係關於僅供說明之較佳實施例。應注意，自下列討論看，本文中所揭示之結構及方法之替代實施例將易於被視為可在不背離主張內容之原理之情況下採用之可行替代物。
圖1A係具有與LED 104一起整合於一LED晶粒上之TFT像素驅動器108之一顯示面板100之一實例之一橫截面圖。在圖1A中，LED 104之一陣列首先磊晶生長於一基板102上以形成一LED晶圓(或含有多個LED晶粒之一晶圓)。接著，TFT驅動器電路(其係TFT像素驅動器108之一陣列)直接製造於LED晶圓上。在此實例中，TFT像素驅動器108係一底閘型TFT電晶體且一絕緣介電層114將底部閘極108C與基板102分離。
為了清楚起見，圖1A僅展示顯示面板100上之兩個LED 104及兩個TFT像素驅動器108，其中一個像素驅動器108經連接以驅動一個LED 104。應瞭解，整個顯示面板100將包含諸多LED 104及TFT像素驅動器108。在一完全可程式化顯示面板中，LED及像素驅動器經配置成陣列以形成可個別定址像素(較佳為彩色像素)之一陣列。在替代實施例中，顯示面板可具有一更有限可程式化性且像素可經配置成不同幾何形狀。另外，像素驅動器與LED之間不必一一對應。例如，各像素驅動器可驅動並聯電連接之兩個或兩個以上LED。
返回至圖1A，更詳細言之，積體LED顯示面板100經製造如下。基板102係LED 104及TFT像素驅動器108兩者製造於其上之基板。在一實施例中，基板102係一GaAs基板。在另一實施例中，基板102係一透明基板，例如一藍寶石基板。在此情況中，除自頂側之外，亦可透過顯示面板 之底側看見顯示面板100上之影像。為了方便起見，「底部」、「下方」及其類似術語係指朝向基板102之方向(圖1A中之向下方向)且「頂部」、「上方」及其類似術語係指朝向LED 104及TFT電路之方向(圖1A中之向上方向)。其他實例性基板包含GaP基板、InP基板、SiC基板、ZnO基板及Si基板。
LED 104之陣列之磊晶層生長於基板102上。LED磊晶層103形成LED 104之n型層104B。額外層藉由磊晶來生長以形成一p型層104A及n型層與p型層之間之一主動區域104C。磊晶層之一部分透過主動層移除以暴露n型層104B來使個別LED 104彼此隔離。晶圓(其將稱作一LED晶圓)現含有一基板，其具有磊晶生長於該基板上之LED 104之一陣列。最後，LED 104之n型層104B將透過一接地接點105接地，且p型層104A將經由一導電跡線106連接至TFT像素驅動器108。
接著，TFT驅動器電路整合至LED晶圓上。一絕緣介電層114形成於暴露LED磊晶層103之頂部上，絕緣介電層114橫向定位於相鄰LED 104之間。絕緣介電層114將各TFT像素驅動器108之閘極108C與依其他方式暴露之LED磊晶層103隔離。絕緣介電層114可包含SiO2、SiNx、SiONx、Al2O3、AlN及較佳地可在經受至少300℃之溫度時不顯著分解或變形之其他介電材料。製造方法可包含PECVD、LPCVD、濺鍍沈積、電子束沈積及原子層沈積。TFT像素驅動器108周圍之其他白色區域亦為介電區域117，其通常用於電絕緣及/或鈍化。介電區域117可由相同於或不同於絕緣介電層114之材料製成。
TFT像素驅動器108之一陣列直接製造於絕緣介電層114之頂部上。個別TFT像素驅動器108之各者經電連接以控制一對應LED 104。在一實 施例中，TFT像素驅動器及LED形成為可定址陣列，使得影像資料可便於讀取至顯示面板之各像素中。
在此實例中，TFT像素驅動器108係用於LED 104之一電流驅動器且通常需要兩個電晶體及一個電容器(2T1C組態)。圖1A中僅展示TFT像素驅動器108之一個驅動TFT電晶體且該電晶體直接連接至LED 104。(若干)其他電晶體及電容器(圖1A中未展示)連接至此處所展示之驅動TFT電晶體之閘極108C。當電路掃描/設定剩餘像素時，(若干)其他電晶體設定閘極108C之閘極電壓且電容器維持閘極108C之閘極電壓。
圖6係此一TFT像素驅動器608之一電路圖。在此實例中，TFT像素驅動器608包含兩個電晶體及一個電容器630，其中一電晶體係一控制電晶體610且另一電晶體係一驅動電晶體620。在此實例中，控制電晶體610經組態以使其閘極連接至一掃描信號匯流排線650，使其之一源極/汲極連接至一資料信號匯流排線660，且使另一汲極/源極連接至儲存電容器630及驅動電晶體620之閘極。驅動電晶體620之一源極/汲極連接至一電壓供應器Vdd，且另一汲極/源極連接至LED 604之p型電極。LED 604之n型電極連接至電容器630及接地，如上文圖1A中所描述。在此實例中，當掃描信號650與控制電晶體610之閘極斷開時，資料信號660對儲存電容器630充電且設定驅動電晶體620之閘極電壓，該閘極電壓控制流動通過LED 604之電流。此處，儲存電容器630用於維持驅動電晶體620之閘極電壓，因此在掃描信號650設定其他像素之時間期間維持流動通過LED 604之電流。其他像素驅動器設計將是顯而易見的，例如名稱為「Monolithic Active or Passive Matrix LED Array Display Panels and Display Systems Having the Same」之美國臨時專利申請案第62/214,395號中所 描述，該案以引用方式併入本文中。
返回至圖1A，圖1A中所展示之驅動TFT電晶體包含一源極108A、閘極108C及汲極108B、一非晶矽層108D及一介電區域108E。非晶矽層108D係充當用於形成電晶體之一半導體材料之一薄膜矽層。若非晶矽層108D介於LED 104與檢視器之間，則其宜為足夠薄以允許光透射穿過。若非晶矽層108D不在來自LED 104之光學路徑中，則其不必為透明的。介電區域108E將源極/汲極108A/B與閘極108C隔離。閘極108C控制源極與汲極之間之電流。
在圖1A中，源極108A經由接點112連接至一外部電壓供應器Vdd，且汲極108B連接至LED 104之p型層104A。當接通閘極時，電流自Vdd流動通過TFT像素驅動器108及LED 104而至接地。當切斷閘極時，電流停止。依此方式，可控制LED 104。可個別控制像素驅動器108之閘極108C。依此方式，可控制整個顯示面板。另外，可依二元方式控制顯示面板100上之LED 104(全部接通或全部切斷，且灰階由時間工作週期達成)，或可依一類比方式控制顯示面板100上之LED 104。在圖1A中，TFT像素驅動器108係一底閘型TFT電晶體。
圖1A僅為一實例。其他設計將是顯而易見的。作為一實例，LED 104無需在頂部上具有p型層104A且在底部上具有n型層104B。p型層可位於底部上。作為另一實例，LED係奈米線核殼LED，其中n型GaN奈米線形成核心及發光主動區域且一p型GaN層形成覆蓋奈米線核之外殼。
其他設計亦可用於TFT像素驅動器108。作為一實例，TFT像素驅動器中所使用之TFT電晶體無需為圖1A中所展示之一底閘型TFT。其亦可為一頂閘型TFT。驅動電晶體可為P型場效電晶體(PFET)或N型場效電晶體 (NFET)。名稱為「Monolithic Active or Passive Matrix LED Array Display Panels and Display Systems Having the Same」之美國臨時專利申請案第62/214,395號中描述像素驅動器設計之額外實例，該案以引用方式併入本文中。
在圖1A中，跡線106將TFT像素驅動器108及LED 104電連接。整個像素具有至像素外之三個額外連接：一連接透過接點112至Vdd，一連接經由接點105至接地，且一連接自閘極108C接收控制像素之信號。亦可依其他方式形成此等連接。
圖1B係具有與LED 124一起整合於一LED晶粒上之TFT像素驅動器128之另一實例性顯示面板120之一橫截面圖。類似於圖1A中所展示之顯示面板100，圖1B中所展示之顯示面板120包含整合於一基板122上之LED磊晶層及TFT驅動器電路。在圖1B中，基板122係一絕緣基板。絕緣基板122可為一透明基板(例如一藍寶石基板)，其用於藍色LED或綠色LED以形成自顯示面板120之底側透射之一透明顯示器，此進一步允許自兩側看透顯示面板之影像。
LED磊晶層123生長於絕緣基板122上以形成LED 124之一陣列。磊晶層123經向下移除至基板122以將個別LED 124隔離。
由於基板122係絕緣的，所以不存在額外絕緣介電層(諸如圖1A中之絕緣介電層114)。相反地，將TFT像素驅動器128直接整合至絕緣基板122上。TFT像素驅動器128係底閘型TFT電晶體。
類似於圖1A中所展示之顯示面板100，一供應電壓Vdd經由Vdd接點132連接至TFT像素驅動器128之源極。TFT像素驅動器128之汲極連接至LED 124之p型層。LED 124之n型層經由接地接點125連接至接地。TFT 像素驅動器128之閘極係可個別定址的且依相同於圖1A之顯示面板100之方式控制LED。
圖1C及圖1D展示具有與LED 144、164一起整合於一LED晶粒上之TFT像素驅動器148、168之其他實例性LED顯示面板140、160。在此等實例中，磊晶層143及163生長於基板142及162上。將磊晶層143及163橫向劃分成不同單元。此等單元150、170之部分用於形成LED 144、164。為了方便起見，將此等橫向單元稱為LED磊晶單元150、170。其他單元149、169用於支撐TFT像素驅動器148、168。
在圖1C中，TFT像素驅動器148係一底閘型TFT電晶體。一絕緣介電層151製造於磊晶單元149之頂部上，且底閘型TFT電晶體148直接製造於絕緣介電層151之頂部上。類似於圖1A至圖1B般連接TFT像素驅動器148及LED 144。一供應電壓Vdd經由Vdd接點152連接至TFT像素驅動器148之源極。TFT像素驅動器148之汲極連接至LED 144之p型層。LED 144之n型層經由接地接點145連接至接地。TFT像素驅動器148之閘極係可個別定址的且控制LED 144。
在圖1D中，TFT像素驅動器168係一頂閘型TFT電晶體。在此實例中，TFT像素驅動器168橫向地部分定位於LED磊晶單元170上方以促進自像素驅動器168之汲極至LED 164之p型層的接觸。TFT像素驅動器168橫向地部分定位於非LED磊晶單元169上方。TFT像素驅動器168與LED 164之間之電連接在功能上相同於圖1A至圖1C中之電連接。一供應電壓Vdd經由Vdd接點172連接至TFT像素驅動器168之源極。TFT像素驅動器168之汲極連接至LED 164之p型層。LED 164之n型層經由接地接點165連接至接地。TFT像素驅動器168之閘極係可個別定址的且控制LED 164。
如下文將描述，單色LED顯示面板及多色LED顯示面板兩者可由上文圖1A至圖1D中所展示之裝置結構實現。單色LED顯示面板可由其中全部LED係相同色彩之一LED陣列實施。在一替代設計中，一單色顯示面板可由依一方式控制以產生一單色之不同色彩LED實施。例如，若紅色LED、綠色LED及藍色LED總是一起被接通(例如，不具有獨立像素驅動器)，則其等可用於實施一單色白色顯示器。例如，可藉由使用不同色彩LED及/或不同色彩磷光體或色彩轉換奈米粒子來實現多色顯示器。圖2中展示一些實例。
圖2係根據一實施例之具有與藍色LED 222、224、226一起整合於一相同基板上之TFT驅動器電路之一實例性多色LED顯示面板200之一橫截面圖。在圖2中，顯示面板200包含數對藍色LED及TFT像素驅動器來形成個別像素252、254、256。各像素之TFT-LED結構相同於圖1B中所展示之TFT-LED結構，但亦可使用任何其他結構。儘管LED 222、224、226全部為藍色LED，但不同磷光體用於實施不同色彩。像素252使用由藍色LED 222激發之一紅色磷光體242來實施顯示面板之一紅色像素。像素254使用由藍色LED 224激發之一綠色磷光體244來實施顯示面板之一綠色像素。像素256係一藍色像素，因此藍色LED 226無需磷光體。在另一實施例中，可使用奈米粒子來替代磷光體。除直接色彩轉換(其將LED發射波長直接轉換成各種色彩波長)之外，可首先將LED發射波長轉換成白光(例如，藉由磷光體及/或奈米粒子)，接著使用彩色濾波器來實現各種彩色像素以形成多色顯示面板。
另外，除藍色LED之外，其他波長LED可與其他類型之磷光體組合以形成一多色顯示面板。在一方法中，使用紫外線(UV)LED來替代藍色 LED且每一像素包含一磷光體(或其他色彩轉換元件)：紅色磷光體用於紅色像素，綠色磷光體用於綠色像素，且藍色磷光體用於藍色像素。亦可在無需磷光體層之情況下藉由使用不同色彩LED來形成一多色LED顯示面板。
圖3係根據一實施例之一實例性LED顯示面板300之一俯視圖。顯示面板300包含一資料介面310、一控制模組320及一像素區域340。資料介面310接收界定待顯示之影像之資料。此資料之(若干)來源及格式將取決於應用而變動。控制模組320接收傳入資料且將其轉換成適合於驅動顯示面板中之像素之一形式。控制模組320可包含：數位邏輯機及/或狀態機，其用於將接收格式轉換成適用於像素區域340之格式；移位暫存器或其他類型之緩衝器及記憶體，其用於儲存及轉移資料；數位轉類比轉換器及位準移位器；及掃描控制器，其包含時控電路。
像素區域340包含一像素陣列。像素包含與TFT像素驅動器單片整合之LED 344，例如上文或下圖中所描述。在此實例中，顯示面板300係一彩色RGB顯示面板。其包含配置成行之紅色像素、綠色像素及藍色像素。行341係紅色像素，行342係綠色像素，且行343係藍色像素。在各像素內，一LED 344由一TFT像素驅動器控制。根據先前所展示之實施例，像素連接至一供應電壓及接地且亦連接至一控制信號。為了清楚起見，圖3中僅展示用於LED電流驅動信號之接點348(其連接LED之p型電極及TFT之汲極)。根據先前所描述之各種實施例來形成接地連接(n型電極與系統接地之間)、Vdd連接(TFT之源極與系統Vdd之間)及至TFT之閘極之控制信號連接。在一方法中，列及行定址或掃描用於將信號供應至接點348。
圖3僅為一代表圖。其他設計將是顯而易見的。例如，色彩未必為紅 色、綠色及藍色且各彩色像素之數目未必相等。像素亦未必配置成行或條。例如，一組之四個彩色像素可經配置為一2×2正方形。個別像素單元亦可經配置以共用列或行定址，因此減少列跡線或行跡線之總數目。作為一實例，除圖3中所展示之一正方形像素矩陣之配置之外，亦可使用六角形像素矩陣之一配置來形成顯示面板300。
在一些應用中，無需一完全可程式化矩形像素陣列。亦可使用本文中所描述之裝置結構來形成具有各種形狀及顯示器之顯示面板之其他設計。一類實例係特定應用，其包含看板及汽車。例如，多個像素可經配置成一星形或螺旋形狀來形成一顯示面板，且可藉由接通及切斷LED來產生顯示面板上之不同圖案。另一特定實例係汽車前燈及智慧照明，其中某些像素經群組在一起以形成各種照明形狀且各LED像素群組可由個別像素驅動器接通或切斷或依其他方式調整。
甚至各像素內之裝置之橫向配置可變動。在圖1A至圖1D中，將LED及TFT像素驅動器配置成一直線：LED、其對應TFT像素驅動器、緊鄰LED、其對應TFT像素驅動器等等。此舉僅為了使繪示清楚。參考圖1A，TFT像素驅動器亦可定位於LED「後面」、LED「前面」或LED「頂部上」來替代定位於LED「旁邊」。
可製造不同類型之顯示面板。例如，一顯示面板之解析度通常可在自8×8至3840×2160之範圍內。常見顯示器解析度包含具有320×240解析度及4：3之一縱橫比之QVGA、具有1366×768解析度及16：9之一縱橫比之WXGA、具有1280×720解析度之HD、具有1920×1080解析度之FHD 1080p、具有3840×2160解析度之4K UHD及具有2560×2048解析度及5：4之一縱橫比之GXGA或QSXGA。亦可存在自次微米及其以下至10mm及 其以上之範圍內之各種像素大小。整個顯示區域之大小亦可大幅變動，對角線尺寸在自小至數十微米或更小至高達數百英寸或更大之範圍內。
不同應用亦將需要不同光學亮度。實例性應用包含直觀式顯示螢幕、用於家庭/辦公室投影機之光引擎及諸如智慧型電話、膝上型電腦、穿戴式電子產品及視網膜投影裝置之可攜式電子產品。電力消耗可自用於視網膜投影機之低至數毫瓦特變動至用於戶外大螢幕顯示器、投影機及智慧汽車前燈之高達數千瓦特。就圖框速率而言，歸因於無機LED之快速回應(奈秒級)，圖框速率可高達kHz或甚至高達用於小解析度之MHz。
圖4係根據一實施例之具有藉由接合至含有TFT驅動器電路之一晶粒上所單片整合之LED之一實例性LED顯示面板之一橫截面圖。在圖4中，顯示面板400包含製造於一基板410上之TFT像素驅動器422。為了方便起見，此可指稱一TFT晶圓。接著，LED 440之一陣列藉由接合來單片整合至TFT晶圓上。TFT像素驅動器422包含一源極422A、閘極422C及汲極422B、一非晶矽層422D及一介電區域422E。LED 440包含一p型層440A、一n型層440B及介於兩者之間之一主動區域440C。TFT像素驅動器之源極422A藉由接點415來連接至一供應電壓Vdd。汲極422B藉由接點446來連接至LED之p型層440A，且n型層440B藉由接點450來連接至接地。
在一方法中，顯示面板400可製造如下。首先，在基板410上製造TFT像素驅動器422。例如，首先在基板上沈積或生長TFT之主動層(a-Si、LTPS(低溫多晶矽)、氧化物半導體IGZO(氧化銦鎵鋅))。接著，主動層經圖案化、經蝕刻、經隔離且經交叉連接以形成功能TFT電路。此亦將指稱TFT晶圓(或切割之後之晶粒)或TFT背板。在一單獨基板(圖中未展 示)(其將指稱LED晶圓)上磊晶生長及製造LED 440之陣列。接著，將LED晶圓覆晶接合至TFT晶圓。特定言之，針對圖4中所展示之實例，將來自LED之p型接點446接合至TFT像素驅動器之汲極422B，且將LED之n型層440B之一接點接合至一接地接點450。在圖4中，將接合區域標記為430。在一方法中，接合係基於歐姆接合，例如一金屬接合。在接合之後，移除LED晶圓之基板，其可藉由濕式化學蝕刻或雷射剝離程序來完成。其結果係已與含有對應TFT驅動器電路之一TFT背板單片整合之一LED陣列。在替代實施例中，可不移除LED晶圓之基板。
圖5A係根據一實施例之經由晶圓接合及基板移除所製造之一多色TFT-LED顯示面板之一橫截面圖。在此實例中，TFT驅動器像素製造於基板502上。接著，三個不同色彩LED單片整合至TFT晶圓上(一次一個色彩)。首先，具有紅色LED之一LED晶圓接合至TFT晶圓上。LED基板經移除以留下紅色像素516。接著，具有綠色LED之一LED晶圓接合至TFT晶圓且LED基板經移除以留下綠色像素514。接著，具有藍色LED之一LED晶圓接合至TFT且LED基板經移除以留下藍色像素512。所得顯示面板500具有紅色像素、綠色像素及藍色像素。可在名稱為「Method of Making RGB LED Micro-Display by Multiple Alignment Bonding and Substrate Removal Process」之美國臨時專利申請案第62/273,376號中找到有關晶圓接合及基板移除之製造方法之更多詳細資訊，該案以引用方式併入本文中。可藉由使用僅具有一單色LED之(若干)LED晶圓來製造一單色顯示面板。
圖5B係根據一實施例之一透明TFT-LED顯示面板之一橫截面圖。在此實例中，藉由如圖5A中所描述之單片整合來形成紅色像素522、綠色像 素524及藍色像素526。然而，藍色或綠色LED晶圓之基板575係透明的且不會在晶圓接合之後被移除。例如，基板可為藍寶石。相反地，LED基板575保留於顯示面板560之頂部上且充當一頂部保護蓋。在一些實施例中，紅色LED磊晶層生長於不可透射可見光之一GaAs基板上，且藍色或綠色LED磊晶層通常生長於可透射可見光之藍寶石基板上。LED基板575與TFT基板562之間之空間由一透明黏合劑570填充。若基板575及562兩者係透明的(諸如藍寶石基板及玻璃基板)，則顯示面板560將為透明的，其中可自顯示面板之頂部及底部兩者看見影像。抗反射塗層585可施加至基板575及562之一者或兩者之外表面以改良顯示面板560之光學效能。
儘管[實施方式]含有諸多細節，但此等不應被解釋為限制本發明之範疇，而是僅用於說明本發明之不同實例及態樣。應瞭解，本發明之範疇包含上文未詳細討論之其他實施例。例如，上文所描述之方法可應用於除LED之外之功能裝置之單片整合且TFT電路可充當用於功能裝置之其他控制電路。非LED裝置之實例包含垂直共振腔面射型雷射(VCSEL)、光偵測器、微機電系統(MEMS)、矽光子裝置、電力電子裝置及分散式回饋雷射(DFB)。其他TFT控制電路之實例包含電流驅動器、電壓驅動器、轉阻放大器、邏輯電路及控制非TFT功能裝置之其他TFT電路。
本發明之態樣可用於將TFT像素控制電路陣列與由除矽之外之材料製成之裝置陣列(例如光偵測器陣列或電力電子產品電路陣列)整合。一主動裝置通常使用一控制電路來達成某些功能。若使用一Si基板來製造主動裝置，則可易於在相同Si基板上形成控制電路。然而，諸多主動裝置歸因於效能或可靠性要求而由除Si之外之材料製成，且該材料可能不適合用於製造控制電路。在此等情況中，通常需要一單獨晶片用於控制電路。針對單 一主動裝置，可透過線接合及PCB跡線來形成互連。此對於待連接至一單獨控制電路陣列(其通常為一Si IC)之由除Si之外之一材料製成之成千上萬個主動裝置之一陣列而已變得愈加複雜，有時不可能實現。覆晶接合廣泛用於將兩個晶片與裝置陣列整合，但會出現可製造性、可靠性、生產率等等之問題。然而，本文中所描述之技術可用於達成真正單片整合。此等系統之實例包含控制電路陣列(例如TIA)與中紅外線光偵測器陣列之單片整合及控制電路陣列與GaN電力開關陣列之單片整合。
可在不背離如隨附申請專利範圍中所界定之本發明之精神及範疇之情況下對本文中所揭示之本發明之方法及設備之配置、操作及細節作出熟悉技術者將明白之各種其他修改、改變及變動。因此，本發明之範疇應由隨附申請專利範圍及其合法等效物判定。
200‧‧‧多色發光二極體(LED)顯示面板
222‧‧‧藍色發光二極體(LED)
224‧‧‧藍色發光二極體(LED)
226‧‧‧藍色發光二極體(LED)
242‧‧‧紅色磷光體
244‧‧‧綠色磷光體
252‧‧‧像素
254‧‧‧像素
256‧‧‧像素

Claims (14)

  1. 一種用於製造一積體發光二極體(LED)顯示面板之方法，其包括：將一LED陣列之磊晶層生長於一基板上，該等磊晶層包括一p型層、一n型層及在該p型層及該n型層之間一主動區域；在該等磊晶層成長在該基板上之後，直接製造一薄膜電晶體(TFT)像素驅動器陣列至含有該等磊晶層及該基板之一結構上，該等磊晶層成長在該基板上，且其中該等磊晶層經圖案化以製造該LED陣列；及在該TFT像素驅動器陣列及該LED陣列之間形成電連接，從而該等TFT像素驅動器經電連接以驅動該LED陣列。
  2. 如請求項1之方法，其進一步包括：製造一絕緣介電層，其介於該等TFT像素驅動器與該基板之間，該絕緣介電層將該等TFT像素驅動器與該基板電隔離。
  3. 如請求項2之方法，其中將該等磊晶層生長於該基板上包括：生長一底部LED磊晶層，該底部LED磊晶層形成該p型層或該n型層之一者，該底部LED磊晶層跨越於該LED陣列中之相鄰LED之間，該絕緣介電層定位於該等TFT像素驅動器與該底部LED磊晶層之間。
  4. 如請求項2之方法，其中各TFT像素驅動器包含至少一TFT控制電晶體、一TFT驅動電晶體及一儲存電容器，該方法進一步包括：製造導電跡線，該等導電跡線將該等TFT驅動電晶體之源極或汲極電 連接至該等LED之一頂部p型或n型區域。
  5. 如請求項1之方法，其中該基板係一絕緣基板且該等TFT像素驅動器直接製造至該絕緣基板上。
  6. 如請求項5之方法，其中各TFT像素驅動器包含至少一TFT控制電晶體、一TFT驅動電晶體及一儲存電容器，該方法進一步包括：製造導電跡線，該等導電跡線將該等TFT驅動電晶體之源極或汲極電連接至該等LED之一頂部p型或n型區域。
  7. 如請求項1之方法，其進一步包括：將該等磊晶層劃分成橫向單元，該等橫向單元之某些形成該等LED，該等TFT像素驅動器定位於不形成LED之橫向單元之其他部分上方；及製造一絕緣介電層，其定位於該等TFT像素驅動器與不形成LED之橫向單元之間。
  8. 如請求項7之方法，其中該等TFT像素驅動器包含底閘型TFT驅動電晶體，且該等底閘型TFT驅動電晶體全部定位於不形成LED之橫向單元上方。
  9. 如請求項7之方法，其中該等TFT像素驅動器包含頂閘型TFT驅動電晶體，且該等頂閘型TFT驅動電晶體部分定位於不形成LED之橫向單元上 方且部分定位於形成LED之橫向單元上方。
  10. 如請求項1之方法，其中該LED陣列中之該等LED係一相同色彩。
  11. 如請求項1之方法，其中該LED顯示器係一多色顯示器。
  12. 如請求項11之方法，其中該LED陣列中之該等LED全部係一相同色彩且該方法進一步包括：製造不同色彩磷光體，該等不同色彩磷光體經定位以由相同色彩LED陣列激發。
  13. 如請求項12之方法，其中該LED陣列中之全部LED係紫外線LED。
  14. 如請求項11之方法，其中該LED陣列包含不同色彩LED。
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