CN109300931B - 一种Micro LED显示面板及制作方法、显示装置 - Google Patents
一种Micro LED显示面板及制作方法、显示装置 Download PDFInfo
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- CN109300931B CN109300931B CN201811160756.7A CN201811160756A CN109300931B CN 109300931 B CN109300931 B CN 109300931B CN 201811160756 A CN201811160756 A CN 201811160756A CN 109300931 B CN109300931 B CN 109300931B
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Abstract
本发明公开了一种Micro LED显示面板及其制作方法、显示装置,在转运LED芯片阵列时,只需要将LED芯片阵列压入粘接膜层即可,通过粘接膜层将LED芯片阵列粘接于承载基板或阵列基板上,而后通过去除粘接膜层不需要的部分,以达到去除不需要的LED芯片而完成转运过程,无需通过焊接方式将LED芯片阵列中每个芯片一一焊接在基板上,简化了制作Micro LED显示面板的工艺,降低了Micro LED显示面板的工艺难度,并且避免了通过焊接工艺产生的高温对LED芯片造成影响的情况,避免了转运过程中对LED芯片造成损伤。
Description
技术领域
本发明涉及显示技术领域,更为具体的说,涉及一种Micro LED显示面板及其制作方法、显示装置。
背景技术
发光二极管(Light Emitting Diode,LED)是一种可将电流转换成特定波长范围的光电半导体元件,其发光原理为电子在n型半导体与p型半导体间移动的能量差,以光的形式释放能量,因此发光二极管被称为冷光源,其具有低功耗、尺寸小、亮度高、易与集成电路匹配、可靠性高等优点,作为光源被广泛应用。并且,随着LED技术的成熟,直接利用LED作为自发光显示点像素的LED显示器或Micro LED(即微型LED)显示器的技术也逐渐被广泛应用。
其中,Micro LED显示屏综合了TFT-LCD(thin film transistor-liquid crystaldisplay,薄膜晶体管液晶显示器)和LED显示屏的技术特点,其显示原理是将LED结构设计进行薄膜化、微小化、阵列化,之后将Micro LED从最初的生长衬底上转运到电路基板上,目前Micro LED技术发展的难点之一就在于Micro LED的转运过程,现有在将Micro LED芯片转运至电路基板上时过程复杂。
发明内容
有鉴于此,本发明提供了一种Micro LED显示面板及其制作方法、显示装置,制作Micro LED显示面板的工艺难度低,且能够避免转运过程中对LED芯片造成损伤。
为实现上述目的,本发明提供的技术方案如下:
一种Micro LED显示面板的制作方法,包括:
提供一承载基板;
在所述承载基板一侧表面涂布粘接膜层,所述粘接膜层包括保留区和去除区;
通过携带有LED芯片阵列的转运基板,将所述LED芯片阵列压入所述粘接膜层后,分离所述LED芯片阵列和所述转运基板;
对所述粘接膜层曝光显影,去除所述粘接膜层在所述去除区的部分,以去除所述去除区对应的LED芯片。
相应的,本发明还提供了一种Micro LED显示面板的制作方法,包括:
S1、提供一阵列基板,所述阵列基板包括晶体管阵列层,所述晶体管阵列层包括多个像素点区域,所述晶体管阵列层对应所述像素点区域设置有至少一个晶体管;
S2、在所述阵列基板具有所述晶体管阵列层的表面涂布粘接膜层,所述粘接膜层包括保留区和去除区;
S3、通过携带有LED芯片阵列的转运基板,将所述LED芯片阵列压入所述粘接膜层后,分离所述LED芯片阵列和所述转运基板;
S4、对所述粘接膜层曝光显影,去除所述粘接膜层在所述去除区的部分,以去除所述去除区对应的LED芯片,其中,所述保留区对应的LED芯片与所述晶体管阵列层的相应像素点区域一一对应;
S5、执行步骤S2至S4至少一次;
S6、制作连通所述LED芯片的阳极和相应所述晶体管的源极或漏极的阳极连通电极,和制作接触所述LED芯片的阴极的阴极连通电极,得到Micro LED显示面板。
相应的,本发明还提供了一种Micro LED显示面板,包括:
阵列基板,所述阵列基板包括晶体管阵列层,所述晶体管阵列层包括多个像素点区域,所述晶体管阵列层对应所述像素点区域设置至少一个晶体管;
位于所述阵列基板具有所述晶体管阵列层的表面上的粘接膜层;
以及,嵌入所述粘接膜层的多个LED芯片,所述LED芯片与所述晶体管阵列层的像素点区域一一对应,其中,所述LED芯片的阳极与相应所述晶体管的源极或漏极通过阳极连通电极连通,且所述LED芯片的阴极连接有阴极连通电极。
相应的,本发明还提供了一种Micro LED显示装置,包括上述的Micro LED显示面板。
相较于现有技术,本发明提供的技术方案至少具有以下优点:
本发明提供了一种Micro LED显示面板及其制作方法、显示装置,在制作MicroLED显示面板时,首先在承载基板的表面或阵列基板具有晶体管阵列层的表面涂布粘接膜层,而后通过携带有LED芯片阵列的转运基板,将LED芯片阵列压入粘接膜层后分离LED芯片阵列和转运基板,而后对粘接膜层曝光显影,去除粘接膜层对应去除区的部分,且同时去除了去除区对应的LED芯片;并且,在LED芯片阵列粘接于阵列基板上时,去除了去除区对应的LED芯片,以使保留区对应的LED芯片与晶体管阵列层中相应像素点区域一一对应后,制作连通LED芯片的阳极和相应晶体管的源极或漏极的阳极连通电极,及制作接触LED芯片的阴极的阴极连通电极。
由上述内容可知,本发明提供的技术方案,在转运LED芯片阵列时,只需要将LED芯片阵列压入粘接膜层即可,通过粘接膜层将LED芯片阵列粘接于承载基板或阵列基板上,而后通过去除粘接膜层不需要的部分,以达到去除不需要的LED芯片而完成转运过程,无需通过焊接方式将LED芯片阵列中每个芯片一一焊接在基板上,简化了制作Micro LED显示面板的工艺,降低了Micro LED显示面板的工艺难度,并且避免了通过焊接工艺产生的高温对LED芯片造成影响的情况,避免了转运过程中对LED芯片造成损伤。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据提供的附图获得其他的附图。
图1为本申请实施例提供的一种Micro LED显示面板的制作方法的流程图;
图2为本申请实施例提供的又一种Micro LED显示面板的制作方法的流程图;
图3为本申请实施例提供的又一种Micro LED显示面板的制作方法的流程图;
图4至图8为图3中各步骤对应的结构示意图;
图9为本申请实施例提供的一种Micro LED显示面板的结构示意图;
图10至图15为执行步骤S2至S4两次时各步骤对应的结构示意图;
图16为本申请实施例提供的另一种Micro LED显示面板的结构示意图;
图17为本申请实施例提供的一种LED芯片的结构示意图。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
正如背景技术所述,Micro LED显示屏综合了TFT-LCD和LED显示屏的技术特点,其显示原理是将LED结构设计进行薄膜化、微小化、阵列化,之后将Micro LED从最初的生长衬底上转运到电路基板上,目前Micro LED技术发展的难点之一就在于Micro LED的转运过程,现有在将Micro LED芯片转运至电路基板上时过程复杂。
基于此,本申请实施例提供了一种Micro LED显示面板及其制作方法、显示装置,制作Micro LED显示面板的工艺难度低,且能够避免转运过程中对LED芯片造成损伤。为实现上述目的,本申请实施例提供的技术方案如下,具体结合图1至图17对本申请实施例提供的技术方案进行详细的描述。
参考图1所示,为本申请实施例提供的一种Micro LED显示面板的制作方法的流程图,其中,制作方法包括:
S10、提供一承载基板;
S20、在所述承载基板一侧表面涂布粘接膜层,所述粘接膜层包括保留区和去除区;
S30、通过携带有LED芯片阵列的转运基板,将所述LED芯片阵列压入所述粘接膜层后,分离所述LED芯片阵列和所述转运基板;
S40、对所述粘接膜层曝光显影,去除所述粘接膜层在所述去除区的部分,以去除所述去除区对应的LED芯片。
需要说明的是,本申请实施例对粘接膜层的保留区和去除区的划分不做具体限制,需要根据实际应用进行具体设计。以及,本申请实施例提供的Micro LED显示面板还可以用于发光面板结构。
可以理解的,在制作Micro LED显示面板时,首先在承载基板的表面涂布粘接膜层,而后通过携带有LED芯片阵列的转运基板,将LED芯片阵列压入粘接膜层后分离LED芯片阵列和转运基板,而后对粘接膜层曝光显影,去除粘接膜层对应去除区的部分,同时能够去除该去除区对应的LED芯片,最终得到形成预设图案的LED芯片分布,其中,粘接膜层对应保留区的部分最终会被固化于承载基板的表面。
在本申请一实施例中,本申请提供的承载基板可以为线路板,其中,在承载基板上设置供电线路,而后供电线路与LED芯片相连接,最终通过与供电线路电连接的控制单元驱动承载基板上的LED芯片,以通过无源驱动方式对LED芯片进行控制。
由上述内容可知,本申请实施例提供的技术方案,在转运LED芯片阵列时,只需要将LED芯片阵列压入粘接膜层即可,通过粘接膜层将LED芯片阵列粘接于承载基板上,而后通过去除粘接膜层不需要的部分,以达到去除不需要的LED芯片而完成转运过程,无需通过焊接方式将LED芯片阵列中每个芯片一一焊接在承载基板上,简化了制作Micro LED显示面板的工艺,降低了Micro LED显示面板的工艺难度,并且避免了通过焊接工艺产生的高温对LED芯片造成影响的情况,避免了转运过程中对LED芯片造成损伤。
进一步的,本申请实施提供的在所述LED芯片阵列中,任意一LED芯片的阳极和阴极均裸露于所述LED芯片背离所述承载基板一侧,将LED芯片的阴极和阳极均设置为裸露在LED芯片背离承载基板一侧,便于后续线路与LED芯片的阳极和阴极相连接。
相应的,本申请实施例还提供了一种Micro LED显示面板的制作方法,参考图2所示,为本申请实施例提供的另一种Micro LED显示面板的制作方法的流程图,其中,制作方法包括:
S1、提供一阵列基板,所述阵列基板包括晶体管阵列层,所述晶体管阵列层包括多个像素点区域,所述晶体管阵列层对应所述像素点区域设置有至少一个晶体管;
S2、在所述阵列基板具有所述晶体管阵列层的表面涂布粘接膜层,所述粘接膜层包括保留区和去除区;
S3、通过携带有LED芯片阵列的转运基板,将所述LED芯片阵列压入所述粘接膜层后,分离所述LED芯片阵列和所述转运基板;
S4、对所述粘接膜层曝光显影,去除所述粘接膜层在所述去除区的部分,以去除所述去除区对应的LED芯片,其中,所述保留区对应的LED芯片与所述晶体管阵列层的相应像素点区域一一对应;
S5、执行步骤S2至S4至少一次;
S6、制作连通所述LED芯片的阳极和相应所述晶体管的源极或漏极的阳极连通电极,和制作接触所述LED芯片的阴极的阴极连通电极,得到Micro LED显示面板。
需要说明的是,本申请实施例对于提供的粘接膜层的保留区和去除区的界线,需要根据实际应用进行具体设计,如需要根据不同发光颜色的LED芯片与晶体管阵列层中像素点区域对应关系进行划分。以及,本申请实施例提供的晶体管阵列层的所有像素点区域最终均分别设置一LED芯片,并且,本申请实施例提供的晶体管阵列层对应像素点区域的晶体管数量可以为多个,还可以只具有一个晶体管,但是最终会有一晶体管与LED芯片相电连接;如与LED芯片连接的晶体管可以为为LED芯片提供驱动电流的驱动晶体管,其中,在晶体管阵列层对应像素点区域包括有像素驱动电路时,像素驱动电路除包括驱动晶体管外,还包括多个其他功能晶体管,其中,LED芯片可以与驱动晶体管直接连接,通过驱动晶体管和其他功能晶体管共同完成对LED芯片的驱动;或者,与LED芯片连接的晶体管可以为设置于驱动晶体管和LED芯片之间的发光控制晶体管等,对此本申请不做具体限制。
可以理解的,在制作Micro LED显示面板时,首先在阵列基板具有晶体管阵列层的表面涂布粘接膜层,而后通过携带有LED芯片阵列的转运基板,将LED芯片阵列压入粘接膜层后分离LED芯片阵列和转运基板,而后对粘接膜层曝光显影,去除粘接膜层对应去除区的部分的同时,能够去除粘接于粘接膜层的对应去除区上的LED芯片,而后对粘接膜层对应保留区的部分进行固化(需要说明的是,对于固化粘接膜层对应保留区的部分,可以在曝光显影过程中固化,也可以在将粘接膜层对应去除区的部分去除后固化,对此本申请不做具体限制),其中保留区对应的LED芯片与晶体管阵列层中像素点区域一一对应,通过像素点区域对应的晶体管与LED芯片连接,以作为为LED芯片提供电源的开关结构;并且,在LED芯片阵列粘接于阵列基板上时,再将制作的LED芯片与晶体管阵列层的像素点区域一一对应后,制作连通LED芯片的阳极和相应晶体管的源极或漏极的阳极连通电极,及制作接触LED芯片的阴极的阴极连通电极。阴极连通电极用于连接阴极低电位,以配合阳极连通电极通入的阳极高电位共同为LED芯片供电。
由上述内容可知,本申请实施例提供的技术方案,在转运LED芯片阵列时,只需要将LED芯片阵列压入粘接膜层即可,通过粘接膜层将LED芯片阵列粘接于阵列基板上,而后通过去除粘接膜层不需要的部分,以达到去除不需要的LED芯片而完成转运过程,无需通过焊接方式将LED芯片阵列中每个芯片一一焊接在基板上,简化了制作Micro LED显示面板的工艺,降低了Micro LED显示面板的工艺难度,并且避免了通过焊接工艺产生的高温对LED芯片造成影响的情况,避免了转运过程中对LED芯片造成损伤。
现有技术中,在接收基板上,为了限定LED芯片的放置位置,接收基板上一般会设置像素定义层等膜层,像素定义层具有多个开口,LED芯片位于开口内,并通过焊接部与接收基板相连,对应地,一般通过转运头等装置逐个转运LED芯片至接收基板。相比于现有技术,本申请通过在阵列基板上设置粘接膜层实现LED芯片的转运安装,无需在转运LED芯片之前便在阵列基板上设置像素定义层,消除了像素定义层上的开口限制,因此,可以采用转运基板将LED芯片转运至粘接膜层,转运基板每次可转运大量的LED芯片,提高了转运效率。另一方面,形成阵列基板中的晶体管对应的膜层后,阵列基板的表面一般是不平整的,为了为后续形成的结构提供一个平坦表面,一般会增加一层平坦化层,而在本申请中,粘接膜层在起到固定LED芯片作用的同时,还可以起到平坦化膜层的作用,简化了Micro LED显示面板的膜层结构,利于Micro LED显示面板的薄型化。
在本申请实施例提供的Micro LED显示面板的制作方法中,需要执行步骤S2至S4至少一次,以达到LED芯片与晶体管阵列层中相应像素点区域一一对应的目的,对此“执行步骤S2至S4至少一次”的具体执行次数可以与LED芯片的发光颜色相关。其中,若Micro LED显示面板的所有LED芯片的发光颜色相同,则在Micro LED显示面板的制作过程中,需要经过一次步骤S1至步骤S4即可,即所述Micro LED显示面板的所有LED芯片的发光颜色相同,其中,执行步骤S2至S4一次为:
S2、在所述阵列基板具有所述晶体管阵列层的表面涂布粘接膜层,所述粘接膜层包括保留区和去除区;
S3、通过携带有LED芯片阵列的转运基板,将所述LED芯片阵列压入所述粘接膜层后,分离所述LED芯片阵列和所述转运基板;
S4、对所述粘接膜层曝光显影,去除所述粘接膜层在所述去除区的部分,以去除所述去除区对应的LED芯片,其中,所述保留区对应的LED芯片与所述晶体管阵列层的相应像素点区域一一对应。
需要说明的是,如果转运基板的尺寸小于阵列基板上待转运LED芯片区域的尺寸,那么即使Micro LED显示面板的所有LED芯片发光颜色相同,也可以通过多次转运将所有LED芯片转运至阵列基板,可选的,可以在完成所有LED芯片的转运过程后,再进行步骤S4。
具体结合图3至图8所示,图3为本申请实施例提供的又一种Micro LED显示面板的制作方法的流程图,图4至图8为图3中各步骤对应的结构示意图,其中,Micro LED显示面板的所有LED芯片发光颜色相同,制作方法包括:
S1、提供一阵列基板,所述阵列基板包括晶体管阵列层,所述晶体管阵列层包括多个像素点区域,所述晶体管阵列层对应所述像素点区域设置有至少一个晶体管。
如图4所示,提供一阵列基板100,其中,阵列基板100包括有晶体管阵列层110,晶体管阵列层110包括有多个像素点区域(未画出),且晶体管阵列层110对应像素点区域设置有至少一个晶体管TFT,其中,晶体管TFT为薄膜晶体管。本申请提供的晶体管TFT的源极和漏极,可选裸露于阵列基板100朝向粘接膜层一侧的表面,便于后续对LED芯片的阳极和晶体管的源极或漏极的连接。
在本申请一实施例中,本申请提供的驱动晶体管TFT可以为顶栅型薄膜晶体管,还可以为底栅型薄膜晶体管,对此本申请不做具体限制,需要根据实际应用进行具体设计。
S2、在所述阵列基板具有所述晶体管阵列层的表面涂布粘接膜层,所述粘接膜层包括保留区和去除区。
如图5所示,在阵列基板100具有晶体管阵列层110的表面涂布有粘接膜层200,其中,粘接膜层包括有保留区和去除区,其中,保留区为粘接膜层对应晶体管阵列层中像素点区域组成的区域;而去除区则为粘接膜层对应像素点区域外的区域。本申请对于粘接膜层200的材质不做具体限制,其可以为有机材料,如环氧树脂等有机材料。
S3、通过携带有LED芯片阵列的转运基板,将所述LED芯片阵列压入所述粘接膜层后,分离所述LED芯片阵列和所述转运基板。
如图6所示,转运基板120一表面上携带有LED芯片阵列,LED芯片阵列包括有多个LED芯片300,其中,LED芯片为Micro-LED芯片,Micro-LED芯片的尺寸不大于100微米。LED芯片300被压入粘接膜层200后,使得LED芯片300呈嵌入粘接膜层200的状态,而后对LED芯片阵列和转运基板120进行分离。
在本申请一实施例中,本申请提供的转运基板可以采用粘接固定、磁性固定等方式将LED芯片阵列转运。其中,在转运基板与LED芯片阵列之间粘接固定时,粘接膜层与LED芯片阵列之间的粘性大于转运基板与LED芯片之间的粘性。
S4、对所述粘接膜层曝光显影,去除所述粘接膜层在所述去除区的部分,以去除所述去除区对应的LED芯片,其中,所述保留区对应的LED芯片与所述晶体管阵列层的像素点区域一一对应。
如图7所示,对粘接膜层200曝光显影,去除粘接膜层200对应去除区的部分,以达到去除粘接于粘接膜层的去除区的LED芯片300的目的,最终使得保留区对应的LED芯片300与晶体管阵列层的像素点区域一一对应,亦即,最终得到的结构为晶体管阵列层的每一像素点区域分别对应一LED芯片300,且通过将晶体管TFT与LED芯片300连接,以使晶体管TFT做为为LED芯片供电的开关结构。
S6、制作连通所述LED芯片的阳极和相应晶体管的源极或漏极的阳极连通电极,和制作接触所述LED芯片的阴极的阴极连通电极,得到Micro LED显示面板。
如图8所示,在将LED芯片300转运至阵列基板100上完成后,可以对粘接膜层200对应保留区的部分进行固化(此外,在步骤S4曝光显影过程中也可以对粘接膜层对应保留区的部分进行同时固化,对此本申请不做具体限制)。而后,制作连通LED芯片300的阳极和相应晶体管TFT的源极或漏极的阳极连通电极410;以及,制作接触LED芯片的阴极的阴极连通电极420。
在本申请一实施例中,本申请提供的LED芯片300的阳极和阴极均可选设置于LED芯片300背离阵列基板100一侧的表面,以便于对阳极和阴极制作连接线路。以及,晶体管TFT的源极和漏极同样可选裸露于阵列基板100朝向LED芯片300的表面。其中,由于LED芯片300的阳极和阴极置于LED芯片300背离阵列基板100一侧的表面,故而,阳极可以通过至少透过粘接膜层200的过孔与下方的晶体管TFT的源极或漏极相连。
在本申请一实施例中,在本申请提供的所有LED芯片均为相同发光颜色的LED芯片时,还可以在LED芯片与阵列基板结合结构的出光侧设置一光转换膜层,通过光转换膜层实现不同颜色的出光,即本申请实施例提供的位于所述阵列基板背离所述LED芯片一侧,或位于所述LED芯片背离所述阵列基板一侧还包括有:
光转换膜层,所述光转换膜层包括多个光转换区域,所述光转换区域能够将所述LED芯片的发光颜色转换为第一发光颜色至第M发光颜色中的一种,M为不小于2的正整数,所述光转换区域与所述LED芯片一一对应。
如图9所示,为本申请实施例提供的一种Micro LED显示面板的结构示意图,其中,显示面板的出光侧为LED芯片300背离阵列基板100一侧,其中,位于阵列基板100背离LED芯片300一侧还设置有:
光转换膜层500,光转换膜层500包括多个光转换区域510,光转换区域510能够将所述LED芯片300的发光颜色转换为第一发光颜色至第M发光颜色中的一种,M为不小于2的正整数,光转换区域510与LED芯片300一一对应,如,光转换区域能够将LED芯片发光转换为红色、绿色和蓝色中一种。
在本申请一实施例中,Micro LED显示面板包括的所有LED芯片还可以包括不同颜色的LED芯片,对此在制作Micro LED显示面板时需要执行步骤S2至S4多次,即,本申请实施例提供的所述Micro LED显示面板的LED芯片包括第一发光颜色LED芯片至第N发光颜色芯片,N为不小于2的整数,且所述晶体管阵列层包括与所述第一发光颜色LED芯片至所述第N发光颜色芯片分别相应的第一像素点区域至第N像素点区域,其中,执行步骤S2至S4N次为:
在执行步骤S2至S4第一次时:
S2、在所述阵列基板具有所述晶体管阵列层的表面涂布第一粘接膜层,所述第一粘接膜层包括第一保留区和第一去除区;
S3、通过携带有第一LED芯片阵列的转运基板,将所述第一LED芯片阵列压入所述第一粘接膜层后,分离所述第一LED芯片阵列和所述转运基板,所述第一LED芯片阵列的LED芯片均为所述第一发光颜色LED芯片;
S4、对所述第一粘接膜层曝光显影,去除所述第一粘接膜层对应所述第一去除区的部分,以去除所述第一去除区对应的第一发光颜色LED芯片,其中,所述第一保留区对应的第一发光颜色LED芯片与所述晶体管阵列层的第一像素点区域一一对应;
在执行步骤S2至S4第二次时:
S2、在所述阵列基板具有所述晶体管阵列层一侧涂布第二粘接膜层,所述第二粘接膜层至少覆盖所述阵列基板的裸露表面,所述第二粘接膜层包括第二保留区和第二去除区;
S3、通过携带有第二LED芯片阵列的转运基板,将所述第二LED芯片阵列压入所述第二粘接膜层后,分离所述第二LED芯片阵列和所述转运基板,所述第二LED芯片阵列的LED芯片均为第二发光颜色LED芯片;
S4、对所述粘接膜层曝光显影,去除所述第二粘接膜层对应所述第二去除区的部分,以去除所述第二去除区对应的第二发光颜色LED芯片,其中,所述第二保留区对应的第二发光颜色LED芯片与所述晶体管阵列层的第二像素点区域一一对应;
以此类推直至执行步骤S2至S4第N次完毕,最终得到第i保留区对应的第i发光颜色LED芯片与第i像素点区域一一对应的结构,i为不大于N的正整数。
下面结合附图对执行步骤S2至S4两次为例进行详细说明,其中,图10至图15为执行步骤S2至S4两次时各步骤对应的结构示意图。
执行步骤S2至S4第一次时:
如图10所示,对应步骤S2,阵列基板100具有晶体管阵列层110的表面涂布第一粘接膜层210,第一粘接膜层210包括第一保留区和第一去除区,其中,第一保留区为第一粘接膜层210的第一像素点区域组成区域,第一去除区为第一粘接膜层210的第一像素点区域外的区域,其中,晶体管阵列层110对应第一像素点区域处包括第一晶体管TFT1。
如图11所示,对应步骤S3,转运基板120一表面上携带有第一LED芯片阵列,第一LED芯片阵列包括有多个第一发光颜色LED芯片310。第一发光颜色LED芯片310被压入第一粘接膜层210后,使得第一发光颜色LED芯片310呈嵌入第一粘接膜层210的状态,而后对第一LED芯片阵列和转运基板120进行分离。
如图12所述,对应步骤S4,对第一粘接膜层210曝光显影,去除第一粘接膜层210对应第一去除区的部分,以达到去除粘接于第一粘接膜层210的第一去除区的第一发光颜色LED芯片310的目的,最终使得第一保留区对应的第一发光颜色LED芯片310与晶体管阵列层110的第一像素点区域一一对应。
执行步骤S2至S4第二次时:
如图13所示,对应步骤S2,阵列基板100具有晶体管阵列层110的表面涂布第二粘接膜层220,第二粘接膜层220至少覆盖阵列基板100的裸露表面,且第二粘接膜层220包括第二保留区和第二去除区,其中,第二保留区为第二粘接膜层220对应第二像素点区域组成的区域,第二去除区为第二粘接膜层220对应第二像素点区域外的区域,其中,晶体管阵列层110对应第二像素点区域处包括第二晶体管TFT2。
如图14所示,对应步骤S3,转运基板120一表面上携带有第二LED芯片阵列,第二LED芯片阵列包括有多个第二发光颜色LED芯片320。第二发光颜色LED芯片320被压入第二粘接膜层220后,使得第二发光颜色LED芯片320呈嵌入第二粘接膜层220的状态,而后对第二LED芯片阵列和转运基板120进行分离。
如图15所述,对应步骤S4,对第二粘接膜层220曝光显影,去除第二粘接膜层220对应第一去除区的部分,以达到去除粘接于第二粘接膜层220的第二去除区的第二发光颜色LED芯片320的目的,最终使得第二保留区对应的第二发光颜色LED芯片320与晶体管阵列层110中第二像素点区域一一对应。
在本申请一实施例中,本申请提供的所有发光颜色LED芯片可以包括红色LED芯片、绿色LED芯片和蓝色LED芯片,对此本申请不做具体限制。
在本申请上述任意一实施例中,在所述LED芯片阵列中,任意一LED芯片的阳极和阴极均裸露于所述LED芯片背离所述阵列基板一侧,其中,步骤S4还包括:
对所述粘接膜层曝光显影形成对应所述晶体管的源极或漏极的通孔,其中,所述阳极连通电极通过所述通孔和相应晶体管的源极或漏极电连接。
如图8所示,本申请实施例提供的阳极和阴极均裸露于LED芯片300背离阵列基板一侧,其中,阳极连通电极410通过通孔411与晶体管TFT的源极或漏极电连接。
需要说明的是,在晶体管的源极和漏极同样裸露于阵列基板具有晶体管阵列层一侧表面时,阳极连通电极可以直接通过该通孔与晶体管的源极或漏极相连;若晶体管的源极和漏极被阵列基板具有晶体管阵列层一侧表面覆盖时,需要在当前透过粘接膜层的通孔的基础上,继续刻蚀直至裸露源极或漏极后,实现源极或漏极与阳极连通电极接触。具体的,晶体管阵列层可以包括覆盖晶体管的源极和漏极的钝化膜层,即阵列基板中覆盖晶体管的源极和漏极的表面为钝化膜层的表面,通过钝化膜层保护晶体管的源极和漏极不被划伤。
进一步的,在制作所述阳极连通电极和所述阴极连通电极完毕后,即在步骤S6后还包括:
S7、在所述LED芯片背离所述阵列基板一侧制作保护膜层。
可以理解的,制作阳极连通电极和阴极连通电极后,阳极连通电极、阴极连通电极和LED芯片背离阵列基板一侧且未被阳极连通电极和阴极连通电极覆盖的表面均裸露在外,故而,通过制作一保护膜层覆盖阳极连通电极、阴极连通电极和LED芯片背离阵列基板一侧且未被阳极连通电极和阴极连通电极覆盖的表面,以保护LED芯片不被损坏。
如图16所示,为本申请实施例提供的另一种Micro LED显示面板的结构示意图,其中,位于LED芯片300背离阵列基板100一侧设置有保护膜层1000,其中,保护膜层1000覆盖LED芯片300背离阵列基板100一侧裸露表面。
进一步的,保护膜层1000除将LED芯片300背离阵列基板100一侧裸露表面覆盖外,还将阵列基板100朝向LED芯片300一侧裸露表面覆盖。
在本申请一实施例中,本申请提供的保护膜层优选可以为无机膜层,通过无机膜层保护LED芯片阵列不被划伤的同时,还能够阻挡水汽侵蚀LED芯片阵列。
在本申请上述任意一实施例中,本申请提供的所述LED芯片阵列与所述转运基板之间可以粘接固定,其中,所述LED芯片阵列与所述粘接膜层之间的粘附力大于所述LED芯片阵列与所述转运基板之间的粘附力。
可以理解的,将转运基板与LED芯片阵列之间通过粘接固定,此方法易于实现且工艺简单。
相应的,本申请实施例还提供了一种Micro LED显示面板,如图8所示,Micro LED显示面板包括:
阵列基板100,所述阵列基板100包括晶体管阵列层110,所述晶体管阵列层110包括多个像素点区域(未画出),所述晶体管阵列层110对应所述像素点区域设置有至少一个晶体管TFT;
位于所述阵列基板100具有所述晶体管阵列层110的表面上的粘接膜层200;
以及,嵌入所述粘接膜层200的多个LED芯片300,所述LED芯片300与所述晶体管阵列层110的像素点区域一一对应设置,其中,所述LED芯片300的阳极与相应晶体管TFT的源极或漏极通过阳极连通电极410连通,且所述LED芯片300的阴极连接有阴极连通电极420。
在本申请一实施例中,本申请提供的所述Micro LED显示面板的所有LED芯片的发光颜色相同;
其中,位于所述阵列基板背离所述LED芯片一侧,或位于所述LED芯片背离所述阵列基板一侧还包括有:
光转换膜层,所述光转换膜层包括多个光转换区域,所述光转换区域能够将所述LED芯片的发光颜色转换第一发光颜色至第M发光颜色中的一种,M为不小于2的正整数,所述光转换区域与所述LED芯片一一对应。
具体如图9所示,其中,显示面板的出光侧为LED芯片300背离阵列基板100一侧,其中,位于阵列基板100背离LED芯片300一侧还设置有:
光转换膜层500,光转换膜层500包括多个光转换区域510,光转换区域510能够将所述LED芯片300的发光颜色转换为第一发光颜色至第M发光颜色中的一种,M为不小于2的正整数,光转换区域510与LED芯片300一一对应,如,光转换区域能够将LED芯片发光转换为红色、绿色和蓝色中一种。
或者,在本申请一实施例中,本申请提供的所述Micro LED显示面板的LED芯片可以包括第一发光颜色LED芯片至第N发光颜色芯片,N为不小于2的整数。其中,本申请提供的所有发光颜色LED芯片可以包括红色LED芯片、绿色LED芯片和蓝色LED芯片,对此本申请不做具体限制。
如图8所示,在所述LED芯片阵列中,任意一LED芯片300的阳极和阴极均裸露于所述LED芯片300背离所述阵列基板100一侧。
其中,所述粘接膜层200上包括多个通孔411,所述阳极连通电极410通过所述通孔411和相应晶体管TFT的源极或漏极电连接。
需要说明的是,在晶体管的源极和漏极同样裸露于阵列基板具有晶体管阵列层一侧表面时,阳极连通电极可以直接通过该通孔与晶体管的源极或漏极相连;若晶体管的源极和漏极被阵列基板具有晶体管阵列层一侧表面覆盖时,需要在当前透过粘接膜层的通孔的基础上,继续刻蚀直至裸露源极或漏极后,实现源极或漏极与阳极连通电极接触。具体的,晶体管阵列层可以包括覆盖晶体管的源极和漏极的钝化膜层,即阵列基板中覆盖晶体管的源极和漏极的表面为钝化膜层的表面,通过钝化膜层保护晶体管的源极和漏极不被划伤。
进一步的,为了避免LED芯片的阳极和阴极短接,参考图17所示,为本申请实施例提供的一种LED芯片的结构示意图,其中,所述LED芯片300的阳极301和阴极302之间间隙距离d为大于6微米。
在本申请上述任意一实施例中,本申请提供的所述粘接膜层的材料可以为有机材料,有机材料可以为环氧树脂等有机材料。其中,在对粘接膜层曝光显影时,首先通过掩膜板掩盖粘接膜层的保留区,而后对粘接膜层的去除区进行UV光照射产生反应;而后对粘接膜层上喷涂显影液,显影液将溶解掉粘接膜层对应去除区的部分,而保留未被UV光照射的粘接膜层对应保留区的部分。
在本申请上述任意一实施例中,本申请提供的所述阳极连通电极和所述阴极连通电极可以均为透明电极,通过透明电极设置,保证LED芯片出光角度和出光面积大。
在本申请上述任意一实施例中,如图8所示,本申请提供的所述LED芯片300嵌入所述粘接膜层200的嵌入深度小于所述粘接膜层200的厚度,避免LED芯片300朝向阵列基板100一侧底面与阵列基板100的表面接触,进而避免划伤阵列基板100的表面,而且有利于保护LED芯片300不受损伤。
在本申请上述任意一实施例中,如图8所示,其中,所述粘接膜层200包括多个粘接部201,所述粘接部201与所述LED芯片300对应设置,LED芯片300在所述粘接膜层200的投影位于所述粘接部201内,相邻所述粘接部201之间间隔设置,其中,将相邻粘接部201间隔设置,能够提高粘接膜层释放应力的效果,减小膜层出现翘曲的概率;同时,通过相邻粘接部201间隔能够加快LED芯片释放热量的效率,提高散热效果。
相应的,本申请实施例还提供了一种Micro LED显示装置,包括上述任意一实施例提供的Micro LED显示面板。
本申请实施例提供了一种Micro LED显示面板及其制作方法、显示装置,在制作Micro LED显示面板时,首先在承载基板的表面或阵列基板具有晶体管阵列层的表面涂布粘接膜层,而后通过携带有LED芯片阵列的转运基板,将LED芯片阵列压入粘接膜层后分离LED芯片阵列和转运基板,而后对粘接膜层曝光显影,去除粘接膜层对应去除区的部分,且同时去除了去除区对应的LED芯片;并且,在LED芯片阵列粘接于阵列基板上时,去除了去除区对应的LED芯片,以使保留区对应的LED芯片与晶体管阵列层相应像素点区域一一对应后,制作连通LED芯片的阳极和相应晶体管的源极或漏极的阳极连通电极,及制作接触LED芯片的阴极的阴极连通电极。
由上述内容可知,本申请实施例提供的技术方案,在转运LED芯片阵列时,只需要将LED芯片阵列压入粘接膜层即可,通过粘接膜层将LED芯片阵列粘接于承载基板或阵列基板上,而后通过去除粘接膜层不需要的部分,以达到去除不需要的LED芯片而完成转运过程,无需通过焊接方式将LED芯片阵列中每个芯片一一焊接在基板上,简化了制作MicroLED显示面板的工艺,降低了Micro LED显示面板的工艺难度,并且避免了通过焊接工艺产生的高温对LED芯片造成影响的情况,避免了转运过程中对LED芯片造成损伤。
需要说明的是,在本申请的附图中,LED芯片以其截面为梯形的形状进行示意表示,本申请对LED芯片的形状不作限定。
对所公开的实施例的上述说明,使本领域专业技术人员能够实现或使用本发明。对这些实施例的多种修改对本领域的专业技术人员来说将是显而易见的,本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下,在其它实施例中实现。因此,本发明将不会被限制于本文所示的这些实施例,而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。
Claims (18)
1.一种Micro LED显示面板的制作方法,其特征在于,包括:
S1、提供一阵列基板,所述阵列基板包括晶体管阵列层,所述晶体管阵列层包括多个像素点区域,所述晶体管阵列层对应所述像素点区域设置有至少一个晶体管;
S2、在所述阵列基板具有所述晶体管阵列层的表面涂布粘接膜层,所述粘接膜层包括保留区和去除区;
S3、通过携带有LED芯片阵列的转运基板,将所述LED芯片阵列压入所述粘接膜层后,分离所述LED芯片阵列和所述转运基板;
S4、对所述粘接膜层曝光显影,去除所述粘接膜层在所述去除区的部分,以去除所述去除区对应的LED芯片,其中,所述保留区对应的LED芯片与所述晶体管阵列层的相应像素点区域一一对应;
S5、执行步骤S2至S4至少一次;
S6、制作连通所述LED芯片的阳极和相应所述晶体管的源极或漏极的阳极连通电极,和制作接触所述LED芯片的阴极的阴极连通电极,得到Micro LED显示面板。
2.根据权利要求1所述的Micro LED显示面板的制作方法,其特征在于,所述Micro LED显示面板的所有LED芯片的发光颜色相同,其中,执行步骤S2至S4一次。
3.根据权利要求2所述的Micro LED显示面板的制作方法,其特征在于,位于所述阵列基板背离所述LED芯片一侧,或位于所述LED芯片背离所述阵列基板一侧还包括有:
光转换膜层,所述光转换膜层包括多个光转换区域,所述光转换区域能够将所述LED芯片的发光颜色转换为第一发光颜色至第M发光颜色中的一种,M为不小于2的正整数,所述光转换区域与所述LED芯片一一对应。
4.根据权利要求2所述的Micro LED显示面板的制作方法,其特征在于,所述Micro LED显示面板的LED芯片包括第一发光颜色LED芯片至第N发光颜色芯片,N为不小于2的整数,且所述晶体管阵列层包括与所述第一发光颜色LED芯片至所述第N发光颜色芯片分别相应的第一像素点区域至第N像素点区域,其中,执行步骤S2至S4N次为:
在执行步骤S2至S4第一次时:
S2、在所述阵列基板具有所述晶体管阵列层的表面涂布第一粘接膜层,所述第一粘接膜层包括第一保留区和第一去除区;
S3、通过携带有第一LED芯片阵列的转运基板,将所述第一LED芯片阵列压入所述第一粘接膜层后,分离所述第一LED芯片阵列和所述转运基板,所述第一LED芯片阵列的LED芯片均为所述第一发光颜色LED芯片;
S4、对所述第一粘接膜层曝光显影,去除所述第一粘接膜层对应所述第一去除区的部分,以去除所述第一去除区对应的第一发光颜色LED芯片,其中,所述第一保留区对应的第一发光颜色LED芯片与所述晶体管阵列层的第一像素点区域一一对应;
在执行步骤S2至S4第二次时:
S2、在所述阵列基板具有所述晶体管阵列层一侧涂布第二粘接膜层,所述第二粘接膜层至少覆盖所述阵列基板的裸露表面,所述第二粘接膜层包括第二保留区和第二去除区;
S3、通过携带有第二LED芯片阵列的转运基板,将所述第二LED芯片阵列压入所述第二粘接膜层后,分离所述第二LED芯片阵列和所述转运基板,所述第二LED芯片阵列的LED芯片均为第二发光颜色LED芯片;
S4、对所述粘接膜层曝光显影,去除所述第二粘接膜层对应所述第二去除区的部分,以去除所述第二去除区对应的第二发光颜色LED芯片,其中,所述第二保留区对应的第二发光颜色LED芯片与所述晶体管阵列层的第二像素点区域一一对应;
以此类推直至执行步骤S2至S4第N次完毕。
5.根据权利要求1所述的Micro LED显示面板的制作方法,其特征在于,在所述LED芯片阵列中,任意一LED芯片的阳极和阴极均裸露于所述LED芯片背离所述阵列基板一侧,其中,步骤S4还包括:
对所述粘接膜层曝光显影形成对应所述晶体管的源极或漏极的通孔,其中,所述阳极连通电极通过所述通孔和相应所述晶体管的源极或漏极电连接。
6.根据权利要求1所述的Micro LED显示面板的制作方法,其特征在于,在制作所述阳极连通电极和所述阴极连通电极完毕后,还包括:
在所述LED芯片背离所述阵列基板一侧制作保护膜层。
7.根据权利要求1所述的Micro LED显示面板的制作方法,其特征在于,所述LED芯片阵列与所述转运基板之间粘接固定,其中,所述LED芯片阵列与所述粘接膜层之间的粘附力大于所述LED芯片阵列与所述转运基板之间的粘附力。
8.一种Micro LED显示面板,其特征在于,所述Micro LED显示面板通过权利要求1-7任意一项所述的制作方法制作而成,包括:
阵列基板,所述阵列基板包括晶体管阵列层,所述晶体管阵列层包括多个像素点区域,所述晶体管阵列层对应所述像素点区域设置有至少一个晶体管;
位于所述阵列基板具有所述晶体管阵列层的表面上的粘接膜层;
以及,嵌入所述粘接膜层的多个LED芯片,所述LED芯片与所述晶体管阵列层的像素点区域一一对应,其中,所述LED芯片的阳极与相应所述晶体管的源极或漏极通过阳极连通电极连通,且所述LED芯片的阴极连接有阴极连通电极。
9.根据权利要求8所述的Micro LED显示面板,其特征在于,所述Micro LED显示面板的所有LED芯片的发光颜色相同;
其中,位于所述阵列基板背离所述LED芯片一侧,或位于所述LED芯片背离所述阵列基板一侧还包括有:
光转换膜层,所述光转换膜层包括多个光转换区域,所述光转换区域能够将所述LED芯片的发光颜色转换第一发光颜色至第M发光颜色中的一种,M为不小于2的正整数,所述光转换区域与所述LED芯片一一对应。
10.根据权利要求8所述的Micro LED显示面板,其特征在于,所述Micro LED显示面板的LED芯片包括第一发光颜色LED芯片至第N发光颜色芯片,N为不小于2的整数。
11.根据权利要求8所述的Micro LED显示面板,其特征在于,在所述LED芯片阵列中,任意一LED芯片的阳极和阴极均裸露于所述LED芯片背离所述阵列基板一侧。
12.根据权利要求11所述的Micro LED显示面板,其特征在于,所述粘接膜层上包括多个通孔,所述阳极连通电极通过所述通孔和相应所述晶体管的源极或漏极电连接。
13.根据权利要求11所述的Micro LED显示面板,其特征在于,所述LED芯片的阳极和阴极之间间隙距离为大于6微米。
14.根据权利要求8所述的Micro LED显示面板,其特征在于,所述粘接膜层的材料为有机材料。
15.根据权利要求8所述的Micro LED显示面板,其特征在于,所述阳极连通电极和所述阴极连通电极均为透明电极。
16.根据权利要求8所述的Micro LED显示面板,其特征在于,所述LED芯片嵌入所述粘接膜层的嵌入深度小于所述粘接膜层的厚度。
17.根据权利要求8所述的Micro LED显示面板,其特征在于,所述粘接膜层包括多个粘接部,所述粘接部与所述LED芯片对应设置,LED芯片在所述粘接膜层的投影位于所述粘接部内,相邻所述粘接部之间间隔设置。
18.一种Micro LED显示装置,其特征在于,包括权利要求8-17任一项所述的Micro LED显示面板。
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