TW201828517A - 使用黏著劑之微結構的質量轉遞 - Google Patents

使用黏著劑之微結構的質量轉遞 Download PDF

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TW201828517A
TW201828517A TW106143826A TW106143826A TW201828517A TW 201828517 A TW201828517 A TW 201828517A TW 106143826 A TW106143826 A TW 106143826A TW 106143826 A TW106143826 A TW 106143826A TW 201828517 A TW201828517 A TW 201828517A
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substrate
micro led
adhesive
led array
array
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TWI774713B (zh
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永漳 庄
磊 張
歐放
李起鳴
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香港商香港北大青鳥顯示有限公司
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Abstract

使用黏著劑來達成微結構之自一個基板至另一基板之質量轉遞。在整合式微LED顯示器之脈絡中，微LED陣列製作於原生基板上且對應CMOS像素驅動器製作於單獨之基板上。微LED基板(例如，藍寶石)與CMOS基板(例如，矽)可係不相容的。舉例而言，其可具有不同熱膨脹係數，此使得難以將微LED接合至像素驅動器電路。藉由使用黏著劑來將微LED陣列轉遞至中間基板(例如，矽)。此中間基板可用於將該微LED陣列接合至像素驅動器陣列之程序中。藉由釋放該黏著劑來將該中間基板與該微LED陣列分離。

Description

使用黏著劑之微結構的質量轉遞
本發明一般而言係關於用於製作包含整合式多色彩微LED顯示器面板之半導體裝置的方法。
在當今商業電子裝置中，主動式矩陣液晶顯示器(LCD)及結合薄膜電晶體(TFT)技術之有機發光二極體(OLED)顯示器變得越來越普遍。此等顯示器廣泛地用於膝上型個人電腦、智慧型電話及個人數位助理。數百萬個像素一起在顯示器上形成影像。TFT充當開關來個別地接通及關斷每一像素，從而使得像素變亮或變暗，此允許方便且高效地控制每一像素及整個顯示器。 然而，習用LCD顯示器遭受低光效率，從而致使高電力消耗及有限電池操作時間。雖然主動式矩陣有機發光二極體(AMOLED)顯示器面板通常消耗比LCD面板少之電力，但AMOLED顯示器面板仍可係電池操作裝置中之主要電力消耗著。為延長電池壽命，期望減少顯示器面板之電力消耗。 習用無機半導體發光二極體(LED)具有所示範之優越光效率，此使得電池操作電子器件較期望主動式矩陣LED顯示器。驅動器電路與發光二極體(LED)之陣列用於控制數百萬個像素，從而在顯示器上再現影像。單色彩顯示器面板與全色彩顯示器面板兩者皆可根據各種製作方法製造。 然而，用像素驅動器電路陣列整合數千個或甚至數百萬個微LED極具挑戰性。已提議各種製作方法。在一種方法中，控制電路製作於一個基板且微LED製作於單獨基板上。一次一個或幾個地選擇微LED並將其放置於具有控制電路之基板上。然而，此製作程序係低效且昂貴的。 在另一方法中，使用金屬接合將具有其原始基板之整個微LED陣列對準於並接合至控制電路。在其上製作微LED之基板保留在最終產品中，此可致使光串擾。另外，兩個不同基板之間的熱失配在接合介面處產生應力，該應力可致使可靠性問題。此外，與單色彩顯示器面板相比，多色彩顯示器面板通常需要更多微LED及生長於不同基板材料上之不同色彩微LED，從而使得傳統製造程序甚至更複雜且更低效。 因此，存在對微LED顯示器以及具有微結構之其他類型之半導體裝置兩者之較佳製造方法之需要。
本發明藉由提供使用黏著劑之微結構自一個基板至另一基板的質量轉遞來克服先前技術之限制。在整合式微LED顯示器之脈絡中，微LED陣列製作於原生基板上且對應CMOS像素驅動器製作於單獨之基板上。微LED基板(例如，藍寶石)與CMOS基板(例如，矽)可係不相容的。舉例而言，其可具有不同熱膨脹係數，此使得難以將微LED接合至像素驅動器電路而微LED及像素驅動電路兩者仍位於其原始基板上。因此，藉由使用黏著劑來將微LED陣列轉遞至中間基板(例如，矽)。此中間基板可用於將該微LED陣列接合至該像素驅動器陣列之程序中。然後藉由釋放該黏著劑來將該中間基板與該微LED陣列分離。 其他態樣包含組件、裝置、系統、改良、方法、程序、應用、電腦可讀媒體及與上述各項中之任何者有關之其他技術。
相關申請案交叉參考 本申請案依據35 U.S.C. § 119(e)主張於2016年12月13日提出申請之美國臨時專利申請案第62/433,741號「Mass Transfer of Micro Structures using Adhesives」及於2017年12月08日提出申請之美國實用專利申請案第15/836,703號「Mass Transfer of Micro Structures Using Adhesives」之優先權。前述所有申請案之標的物皆以引用方式全部併入本文中。 各圖及以下說明僅以圖解說明方式與較佳實施例有關。應注意，依據以下論述，本文中所揭示之結構及方法之替代實施例將易於被認為係可在不背離所主張之原理之情況下採用之可行替代方案。 以下實例主要使用整合式微LED顯示器，其中GaN微LED陣列藉由共晶接合附接至CMOS像素驅動器，但此等實例僅係實例且所闡述之技術並不限於此特定應用。微LED之實例包含基於GaN之UV/藍色/綠色微LED，基於AlInGaP之紅色/橙色微LED及基於GaAs或InP之紅外線(IR)微LED。美國專利申請案第15/135,217號「Semiconductor Devices with Integrated Thin-Film Transistor Circuitry」、第15/269,954號「Making Semiconductor Devices with Alignment Bonding and Substrate Removal」、第15/269,956號「Display Panels with Integrated Micro Lens Array」、第15/272,410號「Manufacturing Display Panels with Integrated Micro Lens Array」及第15/701,450號「Multi-Color Micro-LED Array Light Source」中闡述微LED及其他微結構之額外實例。前述所有專利以引用方式全部併入本文中。本文中所闡述之概念亦可用於質量轉遞其他微結構及裝置，諸如VCSEL (垂直腔表面發射雷射)、雷射二極體、光偵測器、MEMS及電力裝置。除共晶接合之外，使用具有導電粒子浸沒於黏著劑中之黏著劑亦可達成微LED至驅動器電路之導電接合。 圖1A係根據一項實施例之整合式微LED顯示器之像素的電路圖。像素包含像素驅動器及微LED 140。在此實例中，像素驅動器包含兩個電晶體及一個電容器130，其中一個電晶體係控制電晶體120且另一個係驅動電晶體110。控制電晶體120經組態使其閘極連接至掃描信號匯流排線150，使其一個源極/汲極連接至資料信號匯流排線170且另一個汲極/源極連接至儲存電容器130並連接至驅動電晶體110之閘極。驅動電晶體110之一個源極/汲極連接至電壓供應器Vdd，且另一個汲極/源極連接至微LED 140之p電極。微LED 140之n電極連接至電容器130且連接至接地。在此實例中，當掃描信號150斷開控制電晶體120之閘極時，資料信號170對儲存電容器130進行充電且設定驅動電晶體110之閘極電壓，此控制電流流動穿過微LED 140。儲存電容器130在此處用於維持驅動電晶體110之閘極電壓，因此維持在掃描信號150設定其他像素之時間期間流動穿過微LED 140之電流。 整合式微LED顯示器之像素驅動器通常製作於一個基板上，如圖1B中所展示。微LED製作於不同基板上，如圖1C中所展示。藉由將微LED與其對應像素驅動器整合來形成整合式微LED顯示器，此如下文所闡述係使用應用黏著劑及中間基板之質量轉遞程序而達成。 圖1B係根據一項實施例之具有製作於矽基板上之像素驅動器陣列之CMOS晶粒的剖面圖。在圖1B中，個別驅動器電路110之陣列製作於CMOS基板102上。用後綴R、G、B標記驅動器電路110，此乃因其對應於紅色、綠色及藍色像素。在此實例中，為清晰起見，與圖1A相比圖1B中僅展示每一像素驅動器電路之驅動電晶體110。驅動電晶體110係CMOS驅動器電路，其中其源極117連接至將接合至對應微LED之觸點116。在未展示之替代實施例中，驅動器電路亦可係玻璃或撓性基板上之TFT電路。 為清晰起見，圖1B僅展示用對應於紅色微LED、綠色微LED及藍色微LED之110R、110G及110B標示之6個驅動器電路110，如上文所闡述。應理解，驅動器電路可包含不同數目個驅動器電路。在完全可程式化顯示器面板中，微LED及驅動器電路配置成陣列以形成個別可定址像素(較佳地彩色像素)之陣列。在替代實施例中，顯示器面板可具有較有限可程式化性且像素可配置成不同幾何形狀。另外，驅動器電路與微LED之間未必一一對應。舉例而言，可存在兩個或兩個以上微LED連接至相同像素驅動器輸出以形成冗餘度，使得若微LED中之一者出故障，則剩餘微LED仍可照亮像素。 返回至圖1B，如下製作驅動器電路100。CMOS基板102係在其上製作個別驅動器電路110之陣列之基板。在一項實施例中，基板102係Si基板。在另一實施例中，支撐基板102係透明基板，舉例而言玻璃基板。其他實例性基板包含GaAs、GaP、InP、SiC、ZnO、藍寶石或撓性基板。 驅動器電路110形成個別像素驅動器以驅動將接合至驅動器電路之微LED，如下文將闡述。在圖1B中所展示之實例中，驅動器電路110係包含源極117、汲極118及閘極119之CMOS驅動器電路。源極117進一步連接至接觸接合觸點116之電極。汲極118經由Vdd觸點115連接至外部電壓供應器。在替代實施例中，汲極118R與源極117R之位置可取決於驅動器電路110R (例如，n通道或p通道FET)之通道類型而變化。 形成絕緣介電層113以將Vdd觸點115、閘極119及電極與源極117電分離。接地觸點114亦形成於對應微LED將連接至之每一像素驅動器內。微LED將在一側上接觸接合觸點116且在另一側上接觸接地觸點114。在未展示之替代實施例中，除CMOS驅動器電路之外驅動器電路亦可包含驅動器電路。作為一項實例，驅動器電路可包含薄膜電晶體(TFT)驅動器電路。作為另一實例，驅動器電路可使用III-V化合物半導體。 如下文更全面地闡述，針對每一驅動器電路110在絕緣介電層113之頂部上形成接合觸點116以與對應微LED之接合觸點接觸，從而使驅動器電路110能夠電耦合至微LED。接合觸點116係歐姆觸點，舉例而言金屬觸點。 圖1C係具有製作於GaAs基板142R上之紅色微LED 140R之陣列之微LED晶粒的剖面圖。在其他實施例中，微LED可係藍色或綠色微LED且基板可係藍寶石、SiC或Si基板。微LED 140較佳地係20微米大小或更小。在一項實施例中，在將微LED整合至圖1B中所展示之CMOS晶粒上之後，微LED 140R在基板142R上配置成陣列以形成具有個別可定址像素之完全可程式化顯示器面板。為清晰起見，圖1C僅展示製作於基板142R上之兩個微LED 140R。應理解，微LED晶粒可包含不同數目個微LED，且可使用多個晶粒(舉例而言針對紅色、綠色及藍色微LED之不同晶粒)。 微LED 140R磊晶生長於基板142R上。形成鈍化層143R以電隔離微LED晶粒上之個別微LED 140R，且在微LED之頂部上形成接合層，在此情形中針對微LED中之每一者，形成接合觸點146R以電耦合至對應驅動器電路110R，如上文在圖1B中所闡述。 在圖1C中，微LED 140R係紅色微LED。在未展示之替代實施例中，亦可使用包含覆蓋有磷光體層或奈米粒子之紫外線(UV)微LED之微LED晶粒以形成全色彩微LED顯示器。亦可製作單色彩微LED顯示器面板。另一選擇係，可使用具有不同色彩磷光體或奈米粒子之相同色彩微LED來製作多色彩顯示器。 微LED通常具有一對觸點，一個通達微LED之p-層且一個通達n-層。在圖1C之實施例中，該對中之僅一個觸點經由接合程序被連接。在此實例中，接合觸點146連接至微LED之p-層。 圖2至圖9圖解說明將微LED陣列與像素驅動器陣列接合之各種實例。此等實例係基於使用黏著劑之微LED陣列至中間基板的質量轉遞。舉例而言，可將微LED陣列轉遞至與CMOS基板較熱相容之載體基板。若接合程序在高溫下發生，則不同熱膨脹係數可阻止微LED陣列與像素驅動器之接合，而微LED陣列及像素驅動器因由不同熱膨脹速率致使之不對準或內部應力仍位於其原生基板上。然而，此等問題可藉由首先將微LED陣列轉遞至具有較相容熱膨脹係數之中間基板而克服。 舉例而言，CMOS像素驅動器通常製作於矽基板上，但基於GaN之微LED可生長於藍寶石基板上。矽與藍寶石之間的熱失配使得難以以可接受轉遞良率將微LED陣列接合至像素驅動器陣列。而是，可首先將基於Ga之微LED質量轉遞至中間矽基板且然後接合至像素驅動器陣列。 圖2A至圖2F係根據一項實施例之圖解說明藉由單翻轉質量轉遞黏著程序製作整合式微LED顯示器面板之剖面圖。圖2A展示製作於原生藍寶石基板242上之GaN微LED 240之陣列。微LED陣列240將附接至CMOS基板上之對應像素驅動器陣列(參見圖2E)。轉遞係藉由使用黏著劑將微LED陣列240質量轉遞至中間基板250而達成。在此實例中，為匹配基板與CMOS電路之熱膨脹，中間基板250係矽。 圖2B至圖2C圖解說明微LED陣列自原始藍寶石基板242至矽載體基板250之轉遞。在圖2B中，微LED陣列240及原生基板242藉由黏著劑260附接至矽基板250。黏著劑之實例包含基於環氧樹脂之聚合物(諸如SU-8、苯環丁烯(BCB)、聚醯亞胺、聚苯并惡唑(PBO)、矽或熱釋放塗層)。黏著劑可係光敏的，在此情形中使用UV或其他輻照來使黏著劑固化。另一選擇係，可使用熱處理來使黏著劑固化。此處，載體基板250係矽，但藍寶石、玻璃、陶瓷及聚合物基板係可用於載體基板之其他實例性材料。 在圖2C中，原生藍寶石基板242自微LED陣列240移除。在此實例中，藉由雷射輻照來達成基板移除。其他技術(諸如濕式化學蝕刻、乾式蝕刻或化學機械拋光(CMP))可用於基板移除程序。對於透明基板(諸如藍寶石)上之GaN微LED，可藉由雷射輻照來完成基板移除。對於矽基板上之GaN微LED，可藉由後續接著濕式化學蝕刻或乾式蝕刻之CMP來完成基板移除。對於GaAs基板上之AlGaInP微LED，濕式化學蝕刻較佳地用於基板移除。在基板移除之後，可掘入蝕刻LED 240之間的黏著劑260以曝露微LED之較多側壁，從而在微LED之間的空間中提供較多空隙且促進在接合至像素驅動器晶粒210之後微LED與黏著劑260及載體基板250之較容易分離。 在圖2D中，接合觸點246沈積於微LED 240上。在圖2E中，此等接合觸點246接合至包含像素驅動器之晶粒210上之對應觸點216。為方便起見，彼晶粒將稱為CMOS晶粒210。在此實例中其使用矽基板。由於載體基板250亦係矽，因此兩個基板在接合程序之熱循環期間以相同速率膨脹及收縮。 在圖2F中，藉由釋放黏著劑260來將載體基板250與微LED陣列240分離。由於微LED 240與周圍黏著劑260之間的不牢固接合，較佳地使用機械剝離來分離載體基板250及黏著劑260與微LED 240。為確保微LED 240至CMOS晶粒210之良好轉遞良率，可藉由以下方式來修整微LED 240與黏著劑260之間的接合強度：在微LED 240與黏著劑260之間插入有低黏著層，及掘入蝕刻黏著劑260以曝露微LED 240之整個側壁以最小化微LED 240與黏著劑260之間的接觸面積。亦可使用其他技術(諸如雷射輻照、濕式蝕刻或乾式蝕刻)來移除載體基板250及黏著劑260。在釋放之後，可(舉例而言)藉由濕式蝕刻或乾式蝕刻移除CMOS晶粒210上剩餘之過量黏著劑。裝置現包含接合至對應像素驅動器陣列之微LED 240陣列。 將微LED自供體基板質量轉遞至受體基板係有益的，此乃因諸多微LED可並行轉遞。本文中所闡述之實例係指晶粒，但應理解在晶粒自晶圓單粒化之前，此等技術可在晶圓級下容易地應用於晶粒。 圖3A至圖3D展示轉遞至載體基板及受體基板上之微LED陣列之微觀影像。圖3A及圖3B展示在轉遞程序之後具有微LED規律地配置於頂部上之受體基板。圖3C及圖3D展示微LED之轉遞之後之載體基板。 圖4A至圖4D展示應用圖2A至圖2F中所展示之程序來製作全色彩微LED顯示器，此需要紅色、綠色及藍色微LED至像素驅動器電路之多個質量轉遞。圖4A展示在對應於圖2E之步驟處之裝置。已使用黏著劑260R將紅色微LED 140R自其原生基板轉遞至矽載體基板250R。已將接合觸點146R添加至微LED 140R且已將整個裝置共晶接合至含有驅動器電路110R之CMOS晶粒上之對應接合觸點116R。CMOS電路之基板102係矽。圖4B展示藉由釋放黏著劑260R移除載體基板250R之後之裝置。 針對綠色及藍色微LED重複該程序。圖4C展示綠色微LED 140G至CMOS晶粒之附接。已使用黏著劑260G將綠色微LED 140G自原生基板轉遞至矽載體基板250G。已將接合觸點246G添加至微LED 140G且已將陣列共晶接合至含有驅動器電路110G之CMOS晶粒上之對應接合觸點116G。 應注意在此情形中，綠色微LED 140G之間必須存在空間以允許存在紅色微LED 140R。若黏著劑260G最初在綠色微LED 140G之間延伸，則可蝕刻或以其他方式移除黏著劑260G以在綠色微LED 140G之間形成空間。更一般而言，可移除微LED 140G之間的材料(包含黏著劑及基板)以增加微LED 140G之間的區域中之垂直空隙。亦可在微LED 140G與基板250G之間添加額外層或可增加黏著劑260G之厚度以進一步增加微LED 140G在基板250G上面之高度。 圖4D展示整合紅色、綠色及藍色微LED 140之後之整合式微LED顯示器。 一旦紅色、綠色、藍色微LED轉遞至像素驅動器晶粒，便在微LED之頂部半導體層與像素驅動器晶粒之共同電極之間產生電連接。圖5係根據一項實施例之實例性微LED顯示器面板之俯視圖。顯示器面板包含資料介面510、控制模組520及像素區540。資料介面510接收定義待顯示之影像之資料。取決於應用，此資料之來源及格式將變化。控制模組520接收傳入資料且將其轉換成適合於驅動顯示器面板中之像素之形式。控制模組520可包含用以自所接收格式轉換為適用於像素區540之一種格式之數位邏輯及/或狀態機、移位暫存器或其他類型之緩衝器及用以儲存及轉遞資料之記憶體、數位轉類比轉換器及位準移位器以及包含時脈電路之掃描控制器。 像素區540包含像素陣列。像素包含與像素驅動器單體地整合之微LED 534，舉例而言如上文或以下各圖中所闡述。在此實例中，顯示器面板係彩色RGB顯示器面板。彩色RGB顯示器面板包含配置成若干行之紅色、綠色及藍色像素。行532R係紅色像素，行532G係綠色像素且行532B係藍色像素。在每一像素內，微LED 534受像素驅動器控制。根據先前所展示之實施例，像素與供應電壓(未展示)接觸且經由接地墊536與接地接觸，並且亦與控制信號接觸。儘管圖5中未展示，但微LED之p電極及驅動電晶體之輸出係定位於微LED 534下方且其藉由接合金屬電連接。根據先前所闡述之各種實施例製成微LED電流驅動信號連接(其位於微LED之p電極與像素驅動器之輸出之間)、接地連接(其位於n電極與系統接地之間)、Vdd連接(其位於像素驅動器之源極與系統Vdd之間)及至像素驅動器之閘極的控制信號連接。 圖5僅係代表圖。將明瞭其他設計。舉例而言，色彩未必係紅色、綠色及藍色，且每一彩色像素未必數目相等。其亦未必配置成行或條。舉例而言，四個彩色像素之組可配置為2x2正方形。作為一項實例，除圖5中所展示之正方形像素矩陣之配置之外，亦可使用六邊形像素矩陣之配置來形成顯示器面板。 在某些應用中，完全可程式化矩形像素陣列並非係必須的。使用本文中所闡述之裝置結構亦可形成具有各種形狀及顯示器之顯示器面板之其他設計。實例之一個類別係包含招牌及汽車之特殊應用。舉例而言，多個像素可配置成星形或螺旋形以形成顯示器面板，且可藉由接通及關斷微LED來產生顯示器面板上之不同圖案。另一特殊實例係汽車頭燈及智慧照明，其中特定像素分群於一起以形成各種照明形狀且每一微LED像素群組可接通或關斷或者以其他方式由個別像素驅動器調整。 可製作不同類型之顯示器面板。舉例而言，顯示器面板之解析度可通常介於自8x8至4096x2160之範圍中。常見顯示器解析度包含具有320x240解析度及4:3之縱橫比之QVGA、具有1024x768解析度及4:3之縱橫比之XGA、具有1280x720解析度及16:9之縱橫比之HD、具有1920x1080解析度及16:9之縱橫比之FHD、具有3840x2160解析度及16:9之縱橫比之UHD及具有4096x2160解析度之4K。亦可存在廣泛各種像素大小，介於自次微米及以下至10 mm及以上之範圍中。整體顯示器區之大小亦可廣泛地變化，對角線介於自小至數十微米或更小直至高達數百英吋或更大之範圍中。 不同應用亦將對光學亮度具有不同要求。實例性應用包含直觀顯示器螢幕、家庭/辦公室投影器及可攜式電子器件(諸如智慧型電話、膝上型電腦、可穿戴式電子器件及視網膜投影)之光引擎。電力消耗可自針對視網膜投影器之低至幾毫瓦至針對大螢幕室外顯示器、投影器及智慧汽車頭燈之高達千瓦變化。就圖框速率而言，歸因於無機微LED之快速回應(奈秒)，圖框速率可高達KHz或針對小解析度甚至MHz。 圖2之實例係「單轉遞」或「單翻轉」程式。微LED陣列係一次轉遞至載體基板，其中LED之定向在轉遞期間翻轉。對於LED工業中最廣泛使用之磊晶晶圓，頂部磊晶層係p型半導體，諸如對於藍色/綠色LED之p-GaN及對於紅色LED之p-GaP。在用黏著劑至載體基板之單轉遞程序及磊晶基板之移除之後，微LED之極性被翻轉，使得頂部磊晶層係n型半導體。然而，可重複轉遞程序以控制微LED之頂部表面之極性。圖6A至圖6D係「雙轉遞」或「雙翻轉」程序之實例。在圖6A中，已使用黏著劑661將微LED陣列640轉遞至第一載體基板651。不是將微LED附接至CMOS晶粒，而是代替地轉遞至第二載體基板652且然後附接至CMOS晶粒，如圖6B至圖6D中所展示。此可能被完成，此乃因微LED 640在圖6A中未正確地定向。亦即，微LED 640之未曝露側可係待接合至CMOS晶粒之側。因此，微LED 640在接合之前翻轉一次以重新定向該等微LED。 在圖6B中，微LED陣列及載體基板651使用額外黏著劑662附接至第二載體基板652。如圖6C中所展示，藉由釋放黏著劑661而將第一載體基板651與微LED陣列分離，從而留下由第二載體基板652支撐之微LED陣列640。應注意，圖6C中之微LED陣列與其在圖6A中之定向相比上下倒置。 如圖6D中所展示，添加了接合觸點646，且將由基板652支撐之微LED陣列接合至CMOS晶粒610上之對應觸點616。然後藉由釋放黏著劑662而將載體基板652與微LED陣列640分離。在圖6D中，微LED 640與圖2F之單翻轉程序中之微LED 240相比係「上下倒置」的。 圖7展示其中黏著劑具有兩個層761及762之實例。舉例而言，此等可係兩種不同黏著劑。此可用於促進載體基板750與微LED陣列640及CMOS晶粒710之分離。舉例而言，兩個黏著劑層761、762之間的介面可經設計以促進分離。另一選擇係，若黏著劑層762不適用於此等技術，則黏著劑層761可促進選擇性濕式蝕刻或雷射輻照。然後可藉由乾式蝕刻移除剩餘黏著劑層762，舉例而言。 圖8A至圖8B展示其中當微LED被質量轉遞時該等微LED具有額外結構之實例。在圖8A中，已形成至微LED 840之p電極及n電極，但仍由原生藍寶石基板842支撐微LED。使用先前所闡述之雙翻轉將具有電極之微LED陣列840轉遞至矽載體基板850。結果展示於圖8B中。此然後可被接合至CMOS晶粒。另一選擇係，其可使用具有導電粒子之黏著劑附接至CMOS晶粒，該等導電粒子在微LED電極與CMOS晶粒上之對應裝置之間形成電連接。 圖9A至圖9C展示其中並非所有微LED皆一次釋放之實例。圖9A展示使用黏著劑960轉遞至載體矽基板950之後之微LED陣列940。已沈積接合觸點946。此類似於圖2D中之結構。然而，如圖9B及圖9C中所展示，僅每第三個微LED 940接合至CMOS晶粒910。在此程序之後，載體基板950含有然後可被接合至其他CMOS晶粒之額外微LED 940。 儘管詳細說明含有諸多規定細節，但此等規定細節不應解釋為限制本發明之範疇而是僅僅解釋為圖解說明不同實例。應瞭解，本發明之範疇包含上文未詳細論述之其他實施例。舉例而言，接合墊金屬可係Au/Sn、Au/In或In/Pd。作為另一實例，CMOS晶粒910以及紅色、綠色及藍色微LED模板(圖9A)上之接合墊可經配置使得僅紅色/綠色/藍色模板上之紅色/綠色/藍色微LED之選定部分接合至其指定紅色/綠色/藍色像素。同一模板上之其餘微LED不接合至CMOS晶粒910上之任何墊。可在不背離隨附申請專利範圍中所定義之精神及範疇之情況下對本文中所揭示之方法及設備之配置、操作及細節做出熟習此項技術者將顯而易見之各種其他修改、改變及變化。因此，本發明之範疇應由所附申請專利範圍及其法律等效形式判定。
102‧‧‧CMOS基板/基板/支撐基板
110‧‧‧驅動電晶體/驅動器電路
110B‧‧‧藍色微發光二極體
110G‧‧‧綠色微發光二極體/驅動器電路
110R‧‧‧紅色微發光二極體/驅動器電路
113‧‧‧絕緣介電層
116G‧‧‧接合觸點
116R‧‧‧接合觸點
117R‧‧‧源極
118R‧‧‧汲極
120‧‧‧控制電晶體
130‧‧‧電容器
140‧‧‧微發光二極體
140G‧‧‧綠色微發光二極體/微發光二極體
140R‧‧‧紅色微發光二極體/微發光二極體
142R‧‧‧GaAs基板/基板
143R‧‧‧鈍化層
146R‧‧‧接合觸點
150‧‧‧掃描信號匯流排線/掃描信號
170‧‧‧資料信號匯流排線/資料信號
210‧‧‧像素驅動器晶粒/CMOS晶粒/晶粒
216‧‧‧觸點
240‧‧‧GaN微發光二極體/微發光二極體陣列/發光二極體/微發光二極體
242‧‧‧原生藍寶石基板/原始藍寶石基板/原生基板
246‧‧‧接合觸點
250‧‧‧中間基板/矽載體基板/矽基板/載體基板
250G‧‧‧矽載體基板/基板
250R‧‧‧矽載體基板/載體基板
260‧‧‧黏著劑
260G‧‧‧黏著劑
510‧‧‧資料介面
520‧‧‧控制模組
532B‧‧‧行
532G‧‧‧行
532R‧‧‧行
534‧‧‧微發光二極體
536‧‧‧接地墊
610‧‧‧CMOS晶粒
616‧‧‧觸點
640‧‧‧微發光二極體陣列/微發光二極體
646‧‧‧接合觸點
651‧‧‧第一載體基板/載體基板
652‧‧‧第二載體基板/載體基板/基板
661‧‧‧黏著劑
662‧‧‧額外黏著劑/黏著劑
710‧‧‧CMOS晶粒
750‧‧‧載體基板
761‧‧‧黏著劑層/層
762‧‧‧黏著劑層/層
840‧‧‧微發光二極體/微發光二極體陣列
842‧‧‧原生藍寶石基板
850‧‧‧矽載體基板
910‧‧‧CMOS晶粒
940‧‧‧微發光二極體陣列/微發光二極體/額外微發光二極體
946‧‧‧接合觸點
950‧‧‧載體矽基板/載體基板
960‧‧‧黏著劑
本發明之實施例具有在結合附圖中之實例之情況下依據以下詳細說明及隨附申請專利範圍將更加顯而易見之其他優點及特徵，在附圖中： 圖1A係根據一項實施例之整合式微LED顯示器之像素的電路圖。 圖1B係根據一項實施例之具有製作於矽基板上之像素驅動器陣列之CMOS晶粒的剖面圖。 圖1C係根據一項實施例之具有製作於藍寶石基板上之微LED陣列之微LED晶粒的剖面圖。 圖2A至圖2F係圖解說明根據一項實施例之藉由單翻轉質量轉遞黏著程序製作整合式微LED顯示器面板之剖面圖。 圖3A及圖3B係最終基板上之微LED之微觀影像。 圖3C及圖3D係微LED之轉遞之後之載體基板之微觀影像。 圖4A至圖4D係圖解說明根據一項實施例之另一整合式微LED顯示器面板之製作之剖面圖。 圖5係根據一項實施例之實例性整合式微LED顯示器面板之俯視圖。 圖6A至圖6D係圖解說明根據一項實施例之藉由雙翻轉質量轉遞黏著程序製作整合式微LED顯示器面板之剖面圖。 圖7係圖解說明根據一項實施例之藉由使用多個黏著劑層之轉遞黏著程序製作整合式微LED顯示器面板之剖面圖。 圖8A至圖8B係圖解說明根據一項實施例之藉由雙翻轉質量轉遞黏著程序製作另一種類之整合式微LED顯示器面板之剖面圖。 圖9A至圖9C係根據一項實施例之圖解說明藉由另一質量轉遞黏著程序製作整合式微LED顯示器面板之剖面圖。

Claims (20)

  1. 一種用於製作整合式微LED顯示器之方法，其包括： 針對包括製作於第一基板上之微LED陣列之一或多個微LED晶粒中之每一者，將該微LED陣列附接至CMOS晶粒，該CMOS晶粒包括製作於CMOS基板上之像素驅動器陣列，其中將該微LED陣列附接至該CMOS晶粒包括： 藉由使用黏著劑來將該微LED陣列轉遞至第二基板，此包含將該第一基板與該微LED陣列分離，該微LED陣列由該第二基板支撐； 將由該第二基板支撐之該微LED陣列之接合金屬墊對準於且接合至該像素驅動器陣列之對應接合金屬墊；及 在接合下一微LED陣列之前藉由釋放該黏著劑來移除該第二基板。
  2. 如請求項1之方法，其中該接合在高溫下發生，該第一基板與該CMOS基板因不同熱膨脹係數而對於在該高溫下接合係不相容的，但該第二基板與該CMOS基板具有對於在該高溫下接合係相容之熱膨脹係數。
  3. 如請求項1之方法，其中該第一基板係藍寶石、矽、GaAs及SiC基板中之一者；且該第二基板係藍寶石、矽、玻璃、陶瓷及聚合物基板中之一者。
  4. 如請求項1之方法，其中該黏著劑係SU-8、苯環丁烯(BCB)、聚醯亞胺、聚苯并惡唑(PBO)、聚矽氧或熱釋放塗層中之一者。
  5. 如請求項1之方法，其中藉由使用該黏著劑來將該微LED陣列轉遞至該第二基板包括進行熱處理或UV輻照以使該黏著劑固化。
  6. 如請求項1之方法，其中藉由釋放該黏著劑來移除該第二基板包括進行雷射輻照、濕式蝕刻該黏著劑、乾式蝕刻該黏著劑、熱處理及機械剝離中之至少一者以釋放該黏著劑。
  7. 如請求項1之方法，其中藉由釋放該黏著劑來移除該第二基板包括進行機械剝離以釋放該黏著劑，其中在該等微LED與該黏著劑之間插入有黏著控制層以促進該等微LED自該黏著劑之機械剝離。
  8. 如請求項1之方法，其進一步包括： 在已藉由釋放該黏著劑而移除該第二基板之後移除過量黏著劑。
  9. 如請求項8之方法，其中移除過量黏著劑包括進行濕式蝕刻或乾式蝕刻以移除過量黏著劑。
  10. 如請求項1之方法，其中該黏著劑包括兩個黏著劑層，且藉由釋放該黏著劑來移除該第二基板包括釋放該兩個黏著劑層中較靠近於該第二基板之一者。
  11. 如請求項1之方法，其中藉由使用該黏著劑來將該微LED陣列轉遞至該第二基板包括： 藉由使用該黏著劑來將由該第一基板支撐之該微LED陣列附接至該第二基板；及 在該微LED陣列附接至該第二基板時，將該第一基板與該微LED陣列分離。
  12. 如請求項1之方法，其中藉由使用該黏著劑來將該微LED陣列轉遞至該第二基板包括： 將由該第一基板支撐之該微LED陣列附接至中間基板； 在該微LED陣列附接至該中間基板時，將該第一基板與該微LED陣列分離； 藉由使用該黏著劑來將由該中間基板支撐之該微LED陣列附接至該第二基板；及 在該微LED陣列附接至該第二基板時，將該中間基板與該微LED陣列分離。
  13. 如請求項1之方法，其進一步包括： 在該微LED陣列由該第二基板支撐時，移除該微LED陣列以外之區域中之黏著劑以增加該微LED陣列在該第二基板上面之突出高度。
  14. 如請求項1之方法，其中藉由使用該黏著劑來將該微LED陣列轉遞至該第二基板包括在該微LED陣列與該第二基板之間使用額外層來增加該微LED陣列在該第二基板上面之高度。
  15. 如請求項1之方法，其中該微LED晶粒含有多個微LED陣列，且每一微LED陣列單獨地附接至不同CMOS晶粒。
  16. 如請求項1之方法，其中該方法係在自晶圓單粒化出個別晶粒之前在晶圓級上執行。
  17. 如請求項1之方法，其中將該微LED陣列接合至該像素驅動器陣列包括共晶接合或導電接合。
  18. 如請求項1之方法，其中該微LED晶粒包含通達該微LED陣列之觸點，且藉由使用該黏著劑來將該微LED陣列轉遞至該第二基板包括藉由使用該黏著劑來將該微LED陣列與觸點一起轉遞至該第二基板。
  19. 一種用於將製作於第一基板上之第一微結構陣列附接至製作於第二基板上之第二微結構陣列之方法，該方法包括： 藉由使用黏著劑來將該第一微結構陣列轉遞至第三基板，此包含將第一基板與該第一微結構陣列分離，該第一微結構陣列由該第三基板支撐；及 將由該第三基板支撐之該第一微結構陣列對準於且附接至製作於該第二基板上之該第二微結構陣列；以及 藉由釋放該黏著劑來移除該第三基板。
  20. 如請求項23之方法，其中該等第一微結構係VCSEL、雷射二極體、光偵測器、MEMS及電力裝置中之一者。
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