TW201740528A - 樹脂密封型半導體裝置 - Google Patents
樹脂密封型半導體裝置 Download PDFInfo
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Abstract
本發明提供一種散熱特性優異,且使至基板的封裝強度提高的樹脂密封型半導體裝置。使與連接於晶粒墊的四角的內引線相連的散熱用外引線自密封樹脂露出至外部而使散熱特性提高,將散熱用外引線前端在引線框架壓製加工時加以切斷,在本發明的樹脂密封型半導體裝置的外表鍍層加工時使外表鍍層附著在包含前端的散熱用外引線的整個面上,使基板封裝時的填錫形成變得容易而使至基板的封裝強度提高。
Description
本發明是有關於一種使散熱特性以及至基板的封裝強度提高的樹脂密封型半導體裝置及其製造方法。
以功率半導體為代表的需要散熱特性的樹脂密封型半導體裝置為了使半導體晶片中所發出的熱高效率地散出至封裝基板,一般是使晶粒墊(die pad)背面自密封樹脂露出的構造。例如在國際標準規格(JEDEC:MS-012)中註冊有被稱為帶散熱片的小輪廓封裝(Heatsink Small Outline Package,HSOP)的樹脂密封型半導體裝置。在此種類型的樹脂密封型半導體裝置中,自半導體晶片發出的熱是從自密封樹脂露出的散熱板傳導至封裝基板而散出至外部。由此,可獲得所期望的散熱特性。進而,作為提高散熱特性的方法,已提出有使晶粒墊與內引線(inner lead)連結,使熱自與內引線相連的外引線(outer lead)散出至封裝基板的技術(例如,參照專利文獻1)。
圖5(a)~圖5(c)是現有的樹脂密封型半導體裝置的圖。圖5(a)是表面立體圖,圖5(b)是背面立體圖,圖5(c)是沿圖5(b)所示的切斷線A-A的剖面圖。圖5(a)~圖5(c)所示的樹脂密封型半導體裝置是在晶粒墊1上經由晶粒附著膠(die attach paste)6載置有半導體晶片7,將自晶粒墊1延伸的散熱引線19設置在晶粒墊的兩側。又,在晶粒墊1的角部,將包含內引線3及外引線2的端子設置成夾著散熱引線19,且經由線(wire)5與半導體晶片7電性連接。
半導體晶片7、內引線3、線5由密封樹脂8覆蓋,晶粒墊1的散熱面10及外引線2以及散熱引線19自密封樹脂8露出。 [現有技術文獻] [專利文獻]
[專利文獻1]日本專利特開平11-297916號公報
[發明所欲解決的課題] 在專利文獻1所述的樹脂密封型半導體裝置中,在晶粒墊1的中央載置有半導體晶片7,在其附近配置有散熱引線19,故而可獲得良好的散熱特性,但是由於內引線3設置在半導體裝置的角部,故而存在與半導體晶片的距離變遠,用於電性連接的線變長的傾向。在線中使用金線等昂貴的線,大大促使封裝成本(package cost)增加。又,亦存在電阻上升而功耗提升,熱容易蓄積在封裝內部的課題。
本發明是鑒於所述課題而成,目的在於提供一種維持良好的散熱特性且價格低廉的半導體裝置及其製造方法。 [解決課題的手段]
為了解決所述課題,在本發明中使用以下的手段。
首先,使晶粒墊自密封樹脂露出而形成為散熱板。進而,形成為如下的樹脂密封型半導體裝置:在晶粒墊的四角配置有與連接於晶粒墊的內引線連接的散熱用外引線,對散熱用外引線前端在引線框架加工階段中切斷前端,在半導體裝置的外表鍍層步驟之後外表鍍層確實地附著在散熱用外引線前端整個面上。 [發明的效果]
如以上所述,藉由本發明,與連接於晶粒墊的四角的內引線相連的散熱用外引線所形成的散熱面積增大,從而可使樹脂密封型半導體裝置的散熱特性提高。不增大半導體裝置便可實現散熱特性的提高。
又,可使外表鍍層附著在散熱用外引線前端的整個面上。由此,可確實地提高半導體裝置的基板封裝時重要的封裝強度。
進而,在晶粒墊的四角設置與連接於晶粒墊的內引線相連的散熱用外引線,由此不與晶粒墊連接且用以與半導體晶片電性連接的內引線配置在晶粒墊中央部。通常,半導體晶片搭載在晶粒墊中央,故而可縮短用以與內引線電性連接的線長度。
以下,基於圖式,對用以實施本發明的形態進行說明。
圖1是表示本發明的實施例的樹脂密封型半導體裝置的透視圖。本圖是內部構造的概略圖,透過密封樹脂而圖示有內部的半導體晶片及內引線等。
利用晶粒附著膠6將半導體晶片7固定在矩形的晶粒墊1上,晶粒墊1是藉由相對向的懸掛銷4而固定。在與設置有懸掛銷4的一對邊不同的一對邊的兩側設置有多條內引線3及與內引線連接的外引線2。與內引線排列的晶粒墊的邊平行地在半導體晶片上設置有接合墊(boning pad),接合墊與內引線3經由線5而電性連接。而且,在晶粒墊1的四角經由與晶粒墊相連的散熱用內引線3a設置有散熱用外引線9。
散熱用外引線9自散熱用內引線3a延伸,且與散熱用內引線3a連接。散熱用外引線9與外引線2同樣地彎折,形成為樹脂密封型半導體裝置的背面、散熱用外引線9的背面及外引線2的背面成為相同高度。再者,在樹脂密封型半導體裝置的背面,如後文所述,露出有晶粒墊的背面。設置在四角的散熱用外引線9與外引線2相比形成得更寬,發揮著傳遞來自半導體晶片的熱而散出至半導體裝置外的作用。
在圖5(a)~圖5(c)所示的半導體裝置中僅在半導體晶片的兩側設置有散熱引線,故而在未設置散熱引線的部位容易蓄熱,存在對半導體晶片的運行造成影響的情況,但是在本發明的半導體裝置的情況下,由於在四角設置有包含散熱用內引線3a及散熱用外引線9的散熱引線,故而其影響小。通常,半導體晶片的發熱因所形成的半導體元件而不同,故而半導體晶片上的發熱不均勻。藉由使靠近發熱多的部位的散熱引線寬於其他散熱引線,可獲得更良好的散熱特性。
圖2(a)及圖2(b)是表示本發明的實施例的樹脂密封型半導體裝置的立體圖。圖2(a)是上面立體圖,圖2(b)是背面立體圖。在密封樹脂8的兩側露出相對向的多條外引線2,且以夾著所述外引線2的方式設置有一對散熱用外引線9。在半導體裝置的背面設置有自密封樹脂露出的所述晶粒墊1的一部分即散熱面10,在內引線2的外周側設置有散熱用外引線9。
形成為散熱特性高的樹脂密封型半導體裝置,其可利用自晶粒墊背面露出的散熱面10、以及經由內引線3a與晶粒墊1連接的散熱用外引線9而散出在半導體晶片7中所產生的熱。
圖3是本發明的實施例的樹脂密封型半導體裝置中所使用的引線框架11的平面圖。圖3僅表示一個樹脂密封型半導體裝置中所使用的引線框架的一部分,在實際的製造步驟中,是使用在縱橫方向上二維地排列有多個圖3所示的部分的引線框架。
在圖3所示的引線框架11中在晶粒墊1的四角配置有散熱用內引線3a,散熱用外引線9自散熱用內引線3a延伸出來,散熱用外引線9及其他外引線2藉由繫桿(tie bar)12而連結。在圖3中散熱用內引線3a配置在成為晶粒墊的四角的端部的角部上,晶粒墊1的短邊與散熱用外引線9的外側的邊成為一條直線。對散熱用外引線9及其他外引線2實施有彎曲加工,以使晶粒墊1低於散熱用外引線9及其他外引線2。進而,散熱用外引線9的前端因未與引線框架連接而露出。其原因在於如後文所述,在外表鍍層加工時使外表鍍層附著至散熱用外引線9的前端為止。
其次,按照圖式對本發明的實施例的製造方法進行說明。
圖4(a)~圖4(g)是表示本發明的實施例的製造方法的概略構成圖。
圖4(a)是表示本發明的實施例的樹脂密封型半導體裝置的製造方法的樹脂密封前的狀態的表面概略立體圖。
在作為本發明的實施例的樹脂密封型半導體裝置中所使用的引線框架11中,在經彎曲加工成自密封樹脂露出的晶粒墊1上利用晶粒附著膠6將半導體晶片7固定在晶粒墊上,且經由金屬線5將半導體晶片7的電極與內引線3加以電性連接。散熱用外引線9經由散熱用內引線3a連接於晶粒墊1上。散熱用外引線9的前端露出,未與任何部位連接。
圖4(b)是表示在本發明的實施例的樹脂密封型半導體裝置的樹脂密封後去除多餘的密封樹脂的狀態的表面概略立體圖。
密封樹脂是以規定的尺寸對引線框架11自表面及背面進行密封。引線框架11、外引線2及散熱用外引線9是藉由繫桿12而連結,密封樹脂不流入至外引線側。
圖4(c)是表示樹脂密封後對本發明的實施例的樹脂密封型半導體裝置的繫桿12進行切斷加工的狀態的表面概略立體圖。對與引線框架11連結的繫桿12保留外引線2及散熱用外引線9的規定寬度而全部加以切斷。即使在切斷後,引線框架11及晶粒墊1亦藉由懸掛銷4而連接。再者,與晶粒墊1連接的散熱用外引線亦與引線框架11在密封樹脂內部經由散熱用內引線3a而連接。其次,進行藉由電解加工的外表鍍層的加工。散熱用外引線與引線框架11電性連接,故而外表鍍層附著在包含前端9a的散熱用外引線的整個面上。
圖4(d)是表示對鍍敷後的本發明的實施例的樹脂密封型半導體裝置的外引線2以規定的尺寸切斷前端的狀態的表面概略立體圖。
圖4(e)是表示將本發明的實施例的樹脂密封型半導體裝置的外引線2及散熱用外引線9彎曲加工至可進行基板封裝的位置為止的狀態的表面概略立體圖。即使對外引線2及散熱用外引線9進行彎曲加工,本發明的樹脂密封型半導體裝置亦藉由懸掛銷4而保持於引線框架11上。藉由在所述狀態下使測試用觸針(contact pin)抵接至外引線2及散熱用外引線9,可進行本發明的樹脂密封型半導體裝置是否順利地運行的測試。
圖4(f)是表示在規定的位置切斷將本發明的實施例的樹脂密封型半導體裝置與引線框架11加以連接的懸掛銷4而單片化的成品狀態的表面概略立體圖。
圖4(g)是圖4(f)的符號B的箭示圖。外表鍍層附著在自密封樹脂8露出的散熱用外引線的前端9a整個面上。
1‧‧‧晶粒墊
2‧‧‧外引線
3‧‧‧內引線
3a‧‧‧散熱用內引線
4‧‧‧晶粒墊懸掛銷
5‧‧‧線
6‧‧‧晶粒附著膠
7‧‧‧半導體晶片
8‧‧‧密封樹脂
9‧‧‧散熱用外引線
9a‧‧‧前端
10‧‧‧散熱面
11‧‧‧引線框架
12‧‧‧繫桿
19‧‧‧散熱引線
2‧‧‧外引線
3‧‧‧內引線
3a‧‧‧散熱用內引線
4‧‧‧晶粒墊懸掛銷
5‧‧‧線
6‧‧‧晶粒附著膠
7‧‧‧半導體晶片
8‧‧‧密封樹脂
9‧‧‧散熱用外引線
9a‧‧‧前端
10‧‧‧散熱面
11‧‧‧引線框架
12‧‧‧繫桿
19‧‧‧散熱引線
圖1是表示作為本發明的實施例的樹脂密封型半導體裝置的透視圖。 圖2(a)及圖2(b)是表示作為本發明的實施例的樹脂密封型半導體裝置的立體圖。 圖3是作為本發明的實施例的樹脂密封型半導體裝置中所使用的引線框架的平面圖。 圖4(a)~圖4(g)是表示作為本發明的實施例的樹脂密封型半導體裝置的製造方法的圖。 圖5(a)~圖5(c)是表示現有的樹脂密封型半導體裝置的圖。
1‧‧‧晶粒墊
2‧‧‧外引線
3‧‧‧內引線
3a‧‧‧散熱用內引線
4‧‧‧懸掛銷
5‧‧‧線
6‧‧‧晶粒附著膠
7‧‧‧半導體晶片
8‧‧‧密封樹脂
9‧‧‧散熱用外引線
Claims (4)
- 一種樹脂密封型半導體裝置,其特徵在於包括: 半導體晶片; 晶粒墊,接合有所述半導體晶片; 散熱用內引線及散熱用外引線,所述散熱用內引線與所述晶粒墊的四角連接,所述散熱用外引線與所述散熱用內引線連接; 內引線及外引線,所述內引線藉由金屬線與所述半導體晶片分別電性連接,所述外引線與所述內引線分別連接;以及 密封樹脂,將所述晶粒墊、所述半導體晶片、所述內引線及所述散熱用內引線加以密封;且 所述晶粒墊的背面、所述外引線及所述散熱用外引線自所述密封樹脂露出, 所述晶粒墊的所述背面、所述外引線的背面及所述散熱用外引線的背面位於相同高度。
- 如申請專利範圍第1項所述的樹脂密封型半導體裝置,其中所述散熱用內引線與所述晶粒墊的角部連接。
- 如申請專利範圍第1項所述的樹脂密封型半導體裝置,其中外表鍍層附著在包含所述散熱用外引線的前端的整個面上。
- 如申請專利範圍第1項至第3項中任一項所述的樹脂密封型半導體裝置,其中所述樹脂密封型半導體裝置的所述散熱用外引線的寬度大於所述外引線的寬度。
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2016
- 2016-02-02 JP JP2016018091A patent/JP6695156B2/ja not_active Expired - Fee Related
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2017
- 2017-01-24 TW TW106102590A patent/TWI716532B/zh not_active IP Right Cessation
- 2017-01-26 CN CN201710057325.7A patent/CN107039368B/zh active Active
- 2017-01-31 KR KR1020170013850A patent/KR20170092112A/ko not_active Application Discontinuation
- 2017-01-31 US US15/420,642 patent/US10658275B2/en active Active
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TWI716532B (zh) | 2021-01-21 |
CN107039368A (zh) | 2017-08-11 |
JP6695156B2 (ja) | 2020-05-20 |
JP2017139290A (ja) | 2017-08-10 |
CN107039368B (zh) | 2022-04-26 |
KR20170092112A (ko) | 2017-08-10 |
US20170221804A1 (en) | 2017-08-03 |
US10658275B2 (en) | 2020-05-19 |
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