CN102693953A - 半导体装置及其制造方法 - Google Patents
半导体装置及其制造方法 Download PDFInfo
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- CN102693953A CN102693953A CN2012100525547A CN201210052554A CN102693953A CN 102693953 A CN102693953 A CN 102693953A CN 2012100525547 A CN2012100525547 A CN 2012100525547A CN 201210052554 A CN201210052554 A CN 201210052554A CN 102693953 A CN102693953 A CN 102693953A
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Abstract
实施方式的半导体装置,包括:半导体元件、导电性的基座、多个引线、悬挂销和模制树脂。上述半导体元件具有多个电极。上述半导体元件借助于第一焊料搭载到上述基座上。上述基座在包围上述半导体元件的外周部具有定位销。上述多个引线从上述基座向外侧延伸,且与上述半导体元件的上述多个电极电气连接。上述悬挂销在前端具有定位孔,用与上述引线相同的导电性材料构成。把上述定位销插入上述定位孔而把上述悬挂销卡合到上述基座的上述外周部。上述模制树脂内部包含上述半导体元件、上述基座、上述引线的一端和上述悬挂销。上述引线的另一端向上述模制树脂的外部突出地延伸。上述悬挂销通过第二焊料固定到上述基座的上述外周部。
Description
(本发明基于2011年3月22日提交的在先的日本专利申请2011-063315并要求其优先权,其全部内容在此引作参考。)
技术领域
本发明的实施方式涉及半导体装置及其制造方法,该半导体装置包括搭载了半导体元件的基座(bed)和把半导体元件的电极引出到外部的引线,且用树脂封装。
背景技术
作为在模制树脂内对搭载了半导体元件的基座和用来把半导体元件的各电极引出到外部的电路端子进行了密封的半导体装置,有例如SOP(Small Outline Package,小外形封装)、QFP(Quad FlatPackage,方形扁平封装)等。在这些半导体装置中要求提高散热性。为了改善散热性,使基座的与搭载了半导体元件的表面相反侧的表面从模制树脂露出。为了提高过渡性热传导而进一步提高散热性,希望把基座加厚。但是,在半导体装置的组装工序中,通常用使基座和引线从框延伸并一体化了的引线框来提供基座和引线。在半导体装置的组装完成之前,用金属模从引线框上切断利用悬挂销(hanging pin)连结到框上的引线的头和直接连结到框上的引线的头。此时,如果引线和基座相当厚,则金属模的寿命缩短,从而导致制造工序的成本增加。于是,使用通过分别准备较薄地形成了悬挂销和引线的引线框和比引线框厚的基座,把悬挂销的前端和基座的外周部铆接起来,而使基座和引线一体化所得到的结构。但是,该基座和引线的铆接加工费也对半导体装置的制造成本有较大影响。希望进一步降低加工费。
发明内容
本发明的实施方式提供制造成本低、散热性高的半导体装置及其制造方法。
实施方式的半导体装置,包括:半导体元件、导电性的基座、多个引线、悬挂销和模制树脂。上述半导体元件具有多个电极。上述半导体元件借助于第一焊料搭载到上述基座上。上述基座在包围上述半导体元件的外周部具有定位销。上述多个引线从上述基座向外侧延伸,且与上述半导体元件的上述多个电极电气连接。上述悬挂销在前端具有定位孔,用与上述引线相同的导电性材料构成。把上述定位销插入上述定位孔而把上述悬挂销卡合到上述基座的上述外周部。上述模制树脂内部包含上述半导体元件、上述基座、上述引线的一端和上述悬挂销。上述引线的另一端向上述模制树脂的外部突出地延伸。上述悬挂销通过第二焊料固定到上述基座的上述外周部。
根据本发明的实施方式,能够提供制造成本低、散热性高的半导体装置及其制造方法。
附图说明
图1(a)是根据实施方式1的半导体装置的平面图,图1(b)是图1(a)的沿A-A线的剖面图。
图2(a)是根据实施方式1的半导体装置的制造工序的一部分的平面图,图2(b)是图2(a)的沿A-A线的剖面图。
图3(a)是根据实施方式1的半导体装置的制造工序的一部分的平面图,图3(b)是图3(a)的沿A-A线的剖面图。
图4(a)是根据实施方式1的半导体装置的制造工序的一部分的平面图,图4(b)是图4(a)的沿A-A线的剖面图。
图5(a)是根据实施方式1的半导体装置的制造工序的一部分的平面图,图5(b)是图5(a)的沿A-A线的剖面图。
图6(a)是根据实施方式2的半导体装置的平面图,图6(b)是图6(a)的沿A-A线的剖面图。
图7(a)是根据实施方式2的半导体装置的制造工序的一部分的平面图,图7(b)是图7(a)的沿A-A线的剖面图。
图8(a)是根据实施方式2的半导体装置的制造工序的一部分的平面图,图8(b)是图8(a)的沿A-A线的剖面图。
图9(a)是根据实施方式2的半导体装置的制造工序的一部分的平面图,图9(b)是图9(a)的沿A-A线的剖面图。
图10(a)是根据实施方式2的半导体装置的制造工序的一部分的平面图,图10(b)是图10(a)的沿A-A线的剖面图。
具体实施方式
下面,参照附图说明本发明的实施方式。在实施方式的说明中使用的附图,是用来使说明变得容易的示意图,图中各要素的形状、尺寸、大小关系等,在实际实施时并不一定限于图中所示的情况,在能获得本发明的效果的范围内可以适当变更。在实施例中,作为用模制树脂封装了的半导体装置的一例,说明了作为半导体元件具有MOSFET(金属氧化物半导体场效应晶体管)、IGBT(绝缘栅双极晶体管)等的电力用半导体元件的芯片的SOP 8,但在QFP等的其它的树脂封装的半导体装置中也可以适用。另外,在实施例中,以MOSFET、IGBT等的半导体芯片为例,说明了半导体元件,但半导体元件不限于半导体芯片,当然作为半导体元件也可以使用在表面上形成了这些半导体芯片、电容、电阻等的元件、布线图案和电极焊盘等的布线衬底或者多芯片模块。另外,半导体芯片不限于MOSFET、IGBT等的个别半导体,只要是发热成为问题的半导体元件,即使是IC(集成电路)芯片等,也都可以适用本发明。
(实施方式1)
用图1说明实施方式1。图1(a)是根据实施方式1的半导体装置的平面图,图1(b)是图1(a)的沿A-A线的剖面图。另外,图1(a)的模制树脂8内的平面图是作为透视图画出的。
像图1所示的那样,根据本实施方式的半导体装置100包括:半导体元件1、基座3、多个引线4、悬挂销5和模制树脂8。半导体元件1,作为一例,是MOSFET、IGBT等的电力用半导体元件的芯片,具有未图示的多个电极,例如源电极、漏电极和栅电极。作为一例,在半导体元件1的表面上形成源电极和栅电极,在半导体元件1的背面上形成漏电极(未图示)。半导体元件1的背面通过焊料2(第一焊料)与由导电性材料构成的基座3的表面(第一主面)电气连接。即,半导体元件1通过把其背面用焊料焊到基座3的表面上,使漏电极与基座3电气连接。作为基座3的材料,可以用例如铜、铝。
基座3在其外周部3b上有向表面侧(第一主面侧)突出的定位销3a。在本实施方式的情况下,基座3具有矩形的形状,在其四角上有定位销3a。基座3的搭载了半导体元件1的部分形成得比外周部3b厚。因此,基座3在与表面相反的一侧具有从外周部3b突出的背面(第二主面)。以下,如果没有特别声明,基座3的厚度指基座3的搭载了半导体元件1的部分的厚度。即,基座3的厚度表示基座3的表面(第一主面)与背面(第二主面)之间的间隔。
多个引线4从基座向外侧延伸。在本实施方式的情况下,由于以SOP 8为例,所以4条引线从基座的一边向外侧延伸,另4条引线从与它们相反侧的基座的另一边向外侧延伸。从上述一边向外侧延伸的4条引线4a,例如,通过键合引线7与基座3电气连接,通过第一焊料2与在半导体元件1的背面上形成的未图示的漏电极电气连接。或者,也可以是,从上述一边向外侧延伸的4条引线4a与基座3一体地形成,从基座3的外周部3b的上述一边向外侧突出地形成(未图示)。另外,从上述另一边向外侧延伸的4条引线中的两条引线4b通过键合引线7与在半导体元件1的表面上形成的未图示的源电极电气连接,另两条引线4c通过键合引线7与在半导体元件1的表面上形成的未图示的栅电极电气连接。另外,各引线与源电极、漏电极和栅电极各自电气连接,作为一例示出键合引线,但也可以取代键合引线,用由铝或铜等构成的称为条带(stripe)的带状或长方形状的导电体进行。
悬挂销5在其前端具有定位孔5a,由与多个引线相同的导电性材料构成。作为导电性材料,可以使用铝、铜等。通过把在上述基座3的外周部3b上形成的定位销3a插入定位孔5a中,把悬挂销5卡合到基座3的外周部。通过用焊料6(第二焊料)把悬挂销5的形成了在前端形成的定位孔5a的部分与在基座3的外周部3b上形成的定位销3a接合起来,把悬挂销5固定到基座3的外周部3b。悬挂销5,由与多个引线4相同的引线框提供,两者用相同的材料构成,以相同的厚度形成。基座3的厚度形成得比这些引线4和悬挂销5厚。作为基座3的材料,与引线4和悬挂销5同样地,可以使用铝或铜等。像后述的制造方法中说明的那样,为了容易用金属模切断,希望引线4和悬挂销5形成得较薄;为了提高半导体元件1的散热性,希望基座3形成得较厚。
模制树脂8形成为把半导体元件1、基座3、引线4和悬挂销5包含在其内部。半导体元件1完全埋入模制树脂8内。基座3的搭载了半导体元件的表面(第一主面)、定位销3a和外周部3b被模制树脂覆盖,只有从外周部3b突出的第二主面不被模制树脂覆盖而露出到外部。悬挂销5埋入模制树脂8内,把悬挂销5的从模制树脂8露出的部分切掉。
像以上说明的那样构成的根据本实施方式的半导体装置100具有以下的特征。通过把在上述基座3的外周部3b上形成的定位销3a插入定位孔5a中,把悬挂销5卡合到基座3的外周部。通过用焊料6(第二焊料)把悬挂销5的形成了在前端形成的定位孔5a的部分与在基座3的外周部3b上形成的定位销3a接合起来,从而把悬挂销5固定到基座3的外周部3b。通过使悬挂销5和基座3具有上述构成,像后述的制造方法中说明的那样,根据本实施方式的半导体装置100可以抑制制造成本的增加,且同时具有比引线4和悬挂销5厚的基座3。其结果,在工作中从半导体元件1产生的热从半导体元件1的背面传导到基座3,从露出到模制树脂8之外的基座3的背面向半导体装置100的外部有效地散热。由于基座3越厚,过渡性热阻越低,所以可以进一步提高半导体装置100的散热。
下面,用图2~图5说明半导体装置100的制造方法。图2~图5的(a)分别是根据实施方式1的半导体装置100的制造工序的一部分的平面图,图2~图5中的(b)分别是(a)的沿A-A线的剖面图。根据本实施方式的半导体装置100像以下那样地制造。
首先,像图2所示的那样,准备引线框9,该引线框9在环状(例如四边形)的框9a内,每个元件单位具有多个(在本实施方式中作为一例为8个)引线4和多个(在本实施方式中作为一例为4个)悬挂销5。引线框9具有多个元件单位。8个引线4中的4个从框9a的一边向框的内侧延伸,剩余的4个从与上述一边相对置的框9a的另一边向框的内侧延伸。在从框9a的一边延伸的引线4与从框9a的相对置的另一边延伸的引线之间,设置用来配置后述的基座3的空间。而且,悬挂销5从框9a向要配置基座3的预定的空间延伸地形成。在本实施方式中,两个悬挂销从与引线4延伸的框9a的一边正交的另一边的两端部延伸,两个悬挂销5从与该另一边相对置的又一边的两端部延伸。另外,上述悬挂销5和引线4的配置关系是一例,只要是悬挂销5从框9a延伸且可以被基座3支撑的结构,就不限于上述结构。在悬挂销5的与框9a相反侧的前端部设置定位孔5a。引线框9由铝或铜构成,与引线4、悬挂销5和框9a一样地形成得较薄。
准备基座3。像上述那样,基座3具有矩形的形状,在其外周部3b的四角上有向搭载了半导体元件1的第一主面侧突出的定位销3a。基座3的搭载了半导体元件1的部分形成得比外周部3b厚,在与搭载了半导体元件1的第一主面相反的一侧具有从外周部3b突出的第二主面。
通过把在上述基座3的外周部3b上形成的4个定位销3a分别插入对应的悬挂销5的定位孔5a中,把引线框9的悬挂销5卡合到基座3的外周部3b上。通过该卡合,把引线框9临时固定到基座3的外周部3b的第一主面侧,以把基座3配置在从框9a的一边延伸的引线4和从与该一边相对置的框9a的另一边延伸的引线之间。这样的话,在后述的用模制树脂封装的工序中,为了引线框9和基座3不发生错位,像后述的那样用焊料6把引线框9和基座3固定起来。
然后,像图3所示的那样,在基座3的第一主面的要搭载半导体元件1的预定部分上涂敷第一焊料浆料2a。然后,在悬挂销5的形成了前端部分的定位孔5a的部分上涂敷第二焊料浆料6a,把基座3的定位销3a与悬挂销5的形成了定位孔5a的部分紧密结合起来。
然后,像图4所示的那样,借助于第一焊料浆料2a把半导体元件1搭载到基座3的第一主面上。第一焊料浆料2a把在半导体元件1的背面上形成的未图示的漏电极与基座3的第一主面紧密结合起来。然后,用重流(reflow)工序把第一焊料浆料2a和第二焊料浆料6a同时熔化并硬化。由此,在利用第一焊料2把半导体元件1接合到基座3的第一主面上的同时,利用第二焊料6把悬挂销5的形成了定位孔5a的部分与基座3的外周部3b的定位销3a接合起来。即,在通过焊料焊接把半导体元件1接合到基座3的第一主面上的同时,通过焊料焊接把引线框9和基座3一体化。
然后,半导体元件1的多个电极与多个引线4分别电气连接。在本实施方式的半导体装置100中,从框9a的上边延伸的引线4a,分别通过用键合引线7电气连接到基座3的第一主面上,而与半导体元件1的未图示的漏电极电气连接。从框9a的下边延伸的引线4b分别通过用键合引线7与在半导体元件1的表面上形成的未图示的源电极电气连接。从框9a的下边同样地延伸的引线4c分别通过用键合引线7与在半导体元件1的表面上形成的未图示的栅电极电气连接。另外,作为电气连接的手段的一例举出了键合引线,但像上述那样,也可以取代键合引线,用由铝或铜等构成的带状或长方形状的条带。
然后,像图5所示的那样,用未图示的金属模把模制树脂8形成为覆盖半导体元件、基座、键合引线、悬挂销的一部分和引线的一端。在此,半导体元件1完全埋入模制树脂8内。基座3的搭载了半导体元件1的表面、定位销3a和外周部3b被模制树脂覆盖,只有从外周部3b突出的第二主面不被模制树脂覆盖而露出到外部。
然后,用未图示的金属模,在图5中的虚线B的位置从引线框9的框9a切断引线4和悬挂销5。多个引线4的分别与半导体元件1的各电极电气连接的部分被埋入模制树脂8的内部,剩余的部分延伸到模制树脂8的外部。利用第二焊料6与基座3的外周部3b固定起来的悬挂销5的部分埋入模制树脂8内,悬挂销5的剩余的部分形成为不延伸到模制树脂8的外部。
在根据本实施方式的半导体装置100的上述制造方法中,用重流工序把半导体元件1焊料接合到基座3的第一主面上的同时,把悬挂销5的形成了定位孔5a的部分焊料焊接到基座3的外周部3b。由此,在形成模制树脂8之前把具有引线4和悬挂销5的引线框9与比它厚的基座3一体化。其结果,可以使引线4不会从基座3错位地形成模制树脂8。该基座3与引线框9的一体化,由于在用重流工序把半导体元件1焊料焊接到基座3的第一主面上的同时进行,所以无须新的工序,无需对引线框9和基座3进行特别的加工。因此,不会造成制造成本的增加。
与此相对,虽然省略详细说明,但作为替代技术考虑以下的两个比较例。比较例1是用压延材料较厚地形成把基座3、引线4和悬挂销5一体化了的引线框的方法。此时,在用金属模从引线框9切断引线4和悬挂销5时,由于用金属模切断时的冲程长,所以出现寿命缩短的缺点。如果为了避免这一点而以引线4和悬挂销5比基座3薄的方式用压延材料形成引线框,则会增大压延材料的加工费用。这些都会导致制造成本的增大。另外,比较例2是像本实施方式那样,分别准备把引线4和悬挂销5一体地形成的引线框、和比它们厚的基座3,通过把悬挂销的前端铆接到基座3的外周部,而使两者一体化的方法。如果与本实施方式相比,它也会产生铆接的加工费,所以也会导致制造成本的增大。
与这些比较例相比,根据本实施例的半导体装置及其制造方法,无须追加特别的制造工序和产生特别的加工费,就可以用比引线4厚的基座3制造半导体装置。其结果,可以在抑制制造费用增大的同时,提高半导体装置的散热性。
(实施方式2)
下面用图6说明根据实施方式2的半导体装置200。图6(a)是根据实施方式2的半导体装置的平面图,图6(b)是图6(a)的沿A-A线的剖面图。另外,图6(a)的模制树脂8内的平面图是作为透视图画出的。对与在实施方式1中说明过的构成相同的部分赋予相同的附图标记或记号,其说明省略。主要对与实施方式1的不同之处进行说明。
像图6所示的那样,根据本实施方式的半导体装置200与根据实施方式1的半导体装置100的不同之处在于,在基座3的外周部3b上形成的定位销3a向与搭载半导体元件1的第一主面相反侧的第二主面侧突出形成。除此之外,半导体装置200与根据本实施方式的半导体装置100结构相同。
即,基座3在其外周部3b上有向与第一主面相反侧的第二主面侧突出的定位销3a。与实施方式1同样地,基座3具有矩形的形状,在其四角上有定位销3a。基座3的搭载了半导体元件1的部分形成得比外周部3b厚。因此,基座3在与表面相反的一侧具有从外周部突出的第二主面。
悬挂销5在其前端部具有定位孔5a,由与多个引线4相同的导电性材料构成。通过把在上述基座3的外周部3b上形成的定位销3a插入定位孔5a中,把悬挂销5卡合到基座3的外周部。通过用焊料6(第二焊料)把悬挂销5的形成了在前端形成的定位孔5a的部分与在基座3的外周部3b的4个角的一个侧壁接合起来,把悬挂销5固定到基座3的外周部3b。
根据本实施方式的半导体装置200也是,与根据实施方式1的半导体装置100同样地,通过把在上述基座3的外周部3b上形成的定位销3a插入定位孔5a中,把悬挂销5卡合到基座3的外周部。通过用焊料6(第二焊料)把悬挂销5的形成了在前端部形成的定位孔5a的部分与在基座3的外周部3b的4个角的一个侧壁接合起来,把悬挂销5固定到基座3的外周部3b。根据本实施方式的半导体装置200也是,与根据实施方式1的半导体装置100同样地,可以抑制制造成本的增加,且同时具有比引线4和悬挂销5厚的基座3。其结果,在工作中从半导体元件1产生的热从半导体元件1的背面传导到基座3,从露出到模制树脂8之外的基座3的背面向半导体装置200的外部有效地散热。
下面,用图7~图10说明根据本实施方式的半导体装置200的制造方法。对于没有特别声明的事项,与根据实施方式1的半导体装置100的制造方法相同。图7~图10的(a)分别是根据实施方式2的半导体装置200的制造工序的一部分的平面图,图7~图10的(b)分别是(a)的沿A-A线的剖面图。根据本实施方式的半导体装置200,像以下那样地制造。
首先,像图7所示的那样,与实施方式1同样地,准备具有多个引线4和悬挂销5的引线框9。准备基座3。基座3具有矩形的形状,在其外周部3b的四角上有向与搭载了半导体元件1的第一主面相反的一侧突出的定位销3a。基座3的搭载了半导体元件1的部分形成得比外周部3b厚,在与搭载了半导体元件1的第一主面相反的一侧具有从外周部3b突出的第二主面。
通过把在上述基座3的外周部3b形成的4个定位销3a分别插入对应的悬挂销5的定位孔5a中,把引线框9的悬挂销5卡合到基座3的外周部3b。通过该卡合,把引线框9临时固定到基座3的外周部3b的第二主面侧,以把基座3配置在从框9a的一边延伸的引线4和从与该一边相对置的框9a的另一边延伸的引线之间。
然后,像图8所示的那样,在基座3的第一主面的要搭载半导体元件1的预定部分上涂敷第一焊料浆料2a。然后,在悬挂销5的形成了前端部分的定位孔5a的部分上涂敷第二焊料浆料6a,把基座3的外周部3b的4个角中的一个侧壁与悬挂销5的形成了定位孔5a的部分紧密结合起来。
然后,像图9所示的那样,借助于第一焊料浆料2a把半导体元件1搭载到基座3的第一主面。第一焊料浆料2a把在半导体元件1的背面上形成的未图示的漏电极与基座3的第一主面紧密结合起来。然后,用重流工序把第一焊料浆料2a和第二焊料浆料6a同时熔化并硬化。由此,在利用第一焊料2把半导体元件1接合到基座3的第一主面上的同时,利用第二焊料6把悬挂销5的形成了定位孔5a的部分与基座3的外周部3b的4个角的侧壁接合起来。即,在通过焊料焊接把半导体元件1接合到基座3的第一主面上的同时,通过焊料焊接把引线框9和基座3一体化。
然后,与根据实施方式1的半导体装置100的制造方法同样地,半导体元件1的多个电极与多个引线4分别电气连接。
然后,像图10所示的那样,与根据实施方式1的半导体装置100的制造方法同样地,形成模制树脂8,从引线框9的框9a切断引线4和悬挂销5。
与实施方式1同样地,在根据实施方式2的半导体装置200的上述制造方法中,用重流工序把半导体元件1焊料焊接到基座3的第一主面的同时,把悬挂销5的形成了定位孔5a的部分焊料焊接到基座3的外周部3b。由此,在形成模制树脂8之前把具有引线4和悬挂销5的引线框9与比它厚的基座3一体化。其结果,可以使引线4不会从基座3错位地形成模制树脂8。该基座3与引线框9的一体化,由于在用重流工序把半导体元件1焊料焊接到基座3的第一主面的同时进行,所以无须新的工序,无需对引线框9和基座3进行特别的加工。因此,不会造成制造成本的增加。在根据本实施方式的半导体装置200的制造方法中,也可以在抑制制造费用增大的同时,提高半导体装置的散热性。
虽然说明了本发明的几个实施方式,但这些实施方式都是作为例子提出的,并非用来限定本发明的范围。这些新的实施方式可以以其它的各种方式实施,在不脱离发明的主要构思的范围内,可以进行各种省略、改写、变更。这些实施方式及其变形都包含在发明的范围和主要构思内,且包含在权利要求书记载的发明及其等价的范围内。
Claims (20)
1.一种半导体装置,其特征在于包括:
半导体元件,具有多个电极;
导电性的基座,借助于第一焊料搭载有上述半导体元件,且在包围上述半导体元件的外周部具有定位销;
多个引线,从上述基座向外侧延伸,且与上述半导体元件的上述多个电极电气连接;
悬挂销,在前端具有定位孔,用与上述引线相同的导电性材料构成,且把上述定位销插入上述定位孔而被卡合到上述基座的上述外周部;以及
模制树脂,内部包含上述半导体元件、上述基座、上述引线的一端和上述悬挂销,且上述引线的另一端向其外部突出地延伸,
上述悬挂销通过第二焊料固定到上述基座的上述外周部。
2.如权利要求1所述的半导体装置,其特征在于:
上述悬挂销的厚度与上述引线的厚度相同。
3.如权利要求1所述的半导体装置,其特征在于:
上述基座比上述引线厚。
4.如权利要求1所述的半导体装置,其特征在于:
上述基座的具有上述定位销的上述外周部比上述基座的搭载上述半导体元件的部分薄。
5.如权利要求1所述的半导体装置,其特征在于:
上述基座具有搭载了上述半导体元件的第一主面、和从上述外周部向与上述第一主面相反的一侧突出的第二主面。
6.如权利要求5所述的半导体装置,其特征在于:
上述定位销向上述第一主面侧突出。
7.如权利要求6所述的半导体装置,其特征在于:
上述悬挂销的形成了上述定位孔的部分通过第二焊料与上述基座的外周部的上述定位销固定。
8.如权利要求5所述的半导体装置,其特征在于:
上述定位销向上述第二主面侧突出。
9.如权利要求8所述的半导体装置,其特征在于:
上述悬挂销的形成了上述定位孔的部分通过上述第二焊料与上述基座的外周部的侧壁固定。
10.如权利要求5所述的半导体装置,其特征在于:
上述基座的第二主面从模制树脂露出
11.如权利要求1所述的半导体装置,其特征在于:
上述半导体元件包含在表面上形成了电极、布线层、和半导体芯片的布线衬底。
12.一种半导体装置的制造方法,其特征在于包括:
通过在具有从环状的框向内侧延伸的引线和悬挂销的引线框的上述悬挂销的前端设置的定位孔中插入在导电性的基座的外周部设置的定位销,把上述引线框的上述悬挂销卡合到上述基座的上述外周部的工序;
在上述基座的中央部分涂敷第一焊料浆料的工序;
在上述悬挂销的上述前端涂敷第二焊料浆料,以把上述悬挂销的上述前端与上述基座的上述外周部连接起来的工序;
借助于上述第一焊料浆料把具有多个电极的半导体元件搭载到上述基座上的工序;
通过使上述第一焊料浆料和上述第二焊料浆料同时重流,在通过焊料焊接把上述半导体元件固定到上述基座的同时,通过焊料焊接把上述悬挂销的上述前端固定到上述基座的上述外周部的工序;
使上述引线与上述半导体元件的多个电极电气连接的工序;
用模制树脂覆盖上述半导体元件、上述基座、上述悬挂销的一部分和上述引线的一端的工序;以及
从上述引线框的环状的框切断上述引线和上述悬挂销,保留成使上述引线延伸到上述模制树脂的外部的工序。
13.如权利要求12所述的半导体装置的制造方法,其特征在于:
上述悬挂销的厚度与上述引线的厚度相同;
上述基座比上述引线厚。
14.如权利要求12所述的半导体装置的制造方法,其特征在于:
上述基座的具有上述定位销的上述外周部比上述基座的要搭载上述半导体元件的部分薄。
15.如权利要求12所述的半导体装置的制造方法,其特征在于:
上述基座具有搭载了上述半导体元件的第一主面、和从上述外周部向与上述第一主面相反的一侧突出的第二主面。
16.如权利要求15所述的半导体装置的制造方法,其特征在于:
上述定位销向上述第一主面侧突出;
在把上述引线框的上述悬挂销卡合到上述基座的上述外周部的工序中,把上述基座的上述定位销插入上述悬挂销的上述定位孔中。
17.如权利要求16所述的半导体装置的制造方法,其特征在于:
在涂敷上述第二焊料浆料的工序中,以把上述基座的上述外周部的上述定位销与上述悬挂销的上述定位孔的部分接合起来的方式,涂敷上述第二焊料浆料。
18.如权利要求15所述的半导体装置的制造方法,其特征在于:
上述定位销向上述第二主面侧突出;
在把上述引线框的上述悬挂销卡合到上述基座的上述外周部的工序中,把上述基座的上述定位销插入上述悬挂销的上述定位孔。
19.如权利要求18所述的半导体装置的制造方法,其特征在于:
在涂敷上述第二焊料浆料的工序中,以把上述基座的上述外周部的侧壁与上述悬挂销的上述定位孔的部分接合起来的方式,涂敷上述第二焊料浆料。
20.如权利要求12所述的半导体装置的制造方法,其特征在于:
上述半导体元件包含在表面上形成了电极、布线层、和半导体芯片的布线衬底。
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JP2011063315A JP2012199436A (ja) | 2011-03-22 | 2011-03-22 | 半導体装置及びその製造方法 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104795370A (zh) * | 2014-01-21 | 2015-07-22 | 株式会社东芝 | 半导体装置 |
CN106449435A (zh) * | 2015-07-22 | 2017-02-22 | 恩智浦有限公司 | 热沉极薄四方扁平无引线(hvqfn)封装 |
CN107210233A (zh) * | 2015-07-23 | 2017-09-26 | 瑞萨电子株式会社 | 半导体器件及其制造方法 |
WO2020042632A1 (zh) * | 2018-08-30 | 2020-03-05 | 深圳市聚飞光电股份有限公司 | 一种发光器件及其制作方法、引线框架、支架、发光装置 |
CN111615747A (zh) * | 2017-12-27 | 2020-09-01 | 三菱电机株式会社 | 半导体装置 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2013197365A (ja) * | 2012-03-21 | 2013-09-30 | Toshiba Corp | 半導体装置 |
US10879211B2 (en) | 2016-06-30 | 2020-12-29 | R.S.M. Electron Power, Inc. | Method of joining a surface-mount component to a substrate with solder that has been temporarily secured |
CN107123606B (zh) * | 2017-05-16 | 2020-11-20 | 杰群电子科技(东莞)有限公司 | 一种半导体生产方法 |
CN107195610A (zh) * | 2017-05-16 | 2017-09-22 | 四川旭茂微科技有限公司 | 一种新型整流桥的引线框架 |
US10763195B2 (en) * | 2018-03-23 | 2020-09-01 | Stmicroelectronics S.R.L. | Leadframe package using selectively pre-plated leadframe |
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FR2764114B1 (fr) * | 1997-06-02 | 2003-04-25 | Sgs Thomson Microelectronics | Dispositif semi-conducteur muni d'un dissipateur thermique |
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JPS53142869A (en) * | 1977-05-18 | 1978-12-12 | Nichiden Kikai Kk | Method of bonding lead frame to heat dissipating plate |
US6117709A (en) * | 1997-11-12 | 2000-09-12 | Denso Corporation | Resin sealing type semiconductor device and method of manufacturing the same |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104795370A (zh) * | 2014-01-21 | 2015-07-22 | 株式会社东芝 | 半导体装置 |
CN106449435A (zh) * | 2015-07-22 | 2017-02-22 | 恩智浦有限公司 | 热沉极薄四方扁平无引线(hvqfn)封装 |
CN107210233A (zh) * | 2015-07-23 | 2017-09-26 | 瑞萨电子株式会社 | 半导体器件及其制造方法 |
CN107210233B (zh) * | 2015-07-23 | 2021-07-23 | 瑞萨电子株式会社 | 半导体器件及其制造方法 |
CN111615747A (zh) * | 2017-12-27 | 2020-09-01 | 三菱电机株式会社 | 半导体装置 |
CN111615747B (zh) * | 2017-12-27 | 2023-10-03 | 三菱电机株式会社 | 半导体装置 |
WO2020042632A1 (zh) * | 2018-08-30 | 2020-03-05 | 深圳市聚飞光电股份有限公司 | 一种发光器件及其制作方法、引线框架、支架、发光装置 |
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