CN106449435A - 热沉极薄四方扁平无引线(hvqfn)封装 - Google Patents
热沉极薄四方扁平无引线(hvqfn)封装 Download PDFInfo
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- CN106449435A CN106449435A CN201610523344.XA CN201610523344A CN106449435A CN 106449435 A CN106449435 A CN 106449435A CN 201610523344 A CN201610523344 A CN 201610523344A CN 106449435 A CN106449435 A CN 106449435A
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- tube core
- lug
- thickness
- heat sink
- die
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Abstract
一种热沉极薄四方扁平无引线(HVQFN)封装。根据实例实施例,提供一种用于制备具有增强的散热的集成电路(IC)装置的方法。该方法包括:提供第一厚度的引线框阵列,其具有多个管芯布置区域,每个管芯布置区域具有接合垫平台,接合垫平台在一个或多个侧面上位于围绕管芯布置区域处,接合垫平台具有上表面和相对的下表面;在每个管芯布置区域中放置第二厚度的散热器组装件,该散热器组装件具有第一厚度的至少两个安装耳片,并且将至少两个安装耳片附接到充当锚定垫的对应的接合垫平台上;在散热器装置组装件上管芯接合装置管芯;将装置管芯接合垫导电接合到对应的接合垫平台;并且在模塑料中囊封线接合的装置管芯、散热器组装件和引线框阵列。
Description
技术领域
本发明涉及集成电路(IC)封装。更具体地说,本发明涉及HVQFN或具有热散播器的其它暴露垫无引线封装。
背景技术
电子元件行业持续依靠半导体技术的发展来实现更加紧凑的区域中的更高级功能装置。实现更高级功能的装置的应用需要将大量电子装置集成到单个硅晶片中。随着硅晶片的每给定区域的装置的数目的增大,制造过程变得更加困难。
已经制造出具有在众多学科中的多种应用的半导体装置的许多变体。此类基于硅的半导体装置通常包括金属氧化物半导体场效应晶体管(MOSFET),例如,p沟道MOS(PMOS)、n沟道MOS(NMOS)和互补MOS(CMOS)晶体管、双极晶体管、BiCMOS晶体管。此类MOSFET装置包括在导电栅极与硅类衬底之间的绝缘材料;因此,这些装置一般而言被称作IGFET(绝缘栅极FET)。
在晶片衬底上制造电子装置的过程中,具体的挑战是针对装置的给定目的封装这些装置。
发明内容
本发明解决制造具有较低垂直构型的带增强的热性能的QFN半导体的挑战。在电力应用中,封装中的厚热沉用于在较大接触区域上朝向印刷电路板(PCB)耗散热量。在到PCB上的装置的SMD(表面贴装装置)安装中,热沉减小封装与板之间的平均热阻,由此减小可能由安装过程引起的焊料空隙的影响。
散热问题的一个所提出的解决方案是使用较厚QFN引线框。然而, 标准QFN生产设备无法处理这些较厚的框。另外,较厚QFN框的可用性是一项持续的挑战。即使可获得,厚铜引线框的单切也是困难的并且在维持一致的质量方面增加了困难,这会增大生产成本。框的硬度使得难以维持一致的平度。替代的方案可以使用双重规格(即,引线框的部分是一个厚度,其它部分是第二厚度)。然而,此替代方案是明显更加昂贵的且并不是实际的解决方案。
另外,本发明解决了解除管芯接合状况与它们对引线框和/或载体的不利影响的联系的长期的需要。对于高温管芯接合,这些影响可以包括引线框表面的氧化,引起模具粘附或线接合的问题,或在基于胶带的载体的情况下的粘合剂分解。
此外,暴露的散热器下侧提供装置管芯与印刷电路板(PCB)之间的高完整性电连接,该装置管芯焊接到该印刷电路板。
在实例实施例中,存在用于制备具有增强的散热的集成电路(IC)装置的方法。该方法包括提供具有顶侧表面和下侧表面的散热器阵列,该散热器阵列具有带至少两个安装耳片的多个散热器部分,多个散热器部分在散热器阵列中通过至少两个安装耳片固定地保持在一起,这些安装耳片通过连接杆耦合到彼此,每个散热器部分具有在顶侧表面上的管芯布置区域。多个散热器部分具有第一厚度,并且安装耳片和连接杆具有第二厚度,第一厚度大约是第二厚度的两倍。多个有源装置管芯是被管芯接合到多个散热器部分中的管芯布置区域上,由此形成多个装置管芯/散热器组装件。穿过连接杆的锯切将多个装置管芯/散热器组装件单切成个体散热器装置组装件。
在另一实例实施例中,集成电路(IC)具有增强的散热。IC包括:有源装置管芯,其具有顶侧表面和下侧表面;可接合管芯附接层,其位于有源装置管芯的下侧表面上;以及散热器组装件,其具有顶部表面和相对的下侧表面以容纳有源装置管芯,其中有源装置管芯经由可接合管芯附接层接合到散热器组装件的顶侧表面,并且其中散热器组装件具有至少两个安装耳片,安装耳片具有第一厚度并且散热器组装件具有第二厚度,第一厚度大约是第二厚度的一半。引线框具有顶侧表面和相对的 下侧表面,引线框具有围绕有源装置和散热器组装件的垫平台,其中导电接合将有源装置管芯接合垫连接到引线框上的垫平台,其中至少两个安装耳片锚定到充当锚定垫的对应的垫平台上。囊封物封包有源装置管芯、散热器组装件和引线框;引线框的下侧表面和散热器组装件的下侧表面是暴露的且共面的。
在实例实施例中,存在用于制备具有增强的散热的集成电路(IC)装置的方法。该方法包括:提供第一厚度的引线框阵列,其具有多个管芯布置区域,每个管芯布置区域具有接合垫平台,接合垫平台在一个或多个侧面上位于围绕管芯布置区域处,接合垫平台具有上表面和相对的下表面;在每个管芯布置区域中放置第二厚度的散热器组装件,该散热器组装件具有第一厚度的至少两个安装耳片,并且将至少两个安装耳片附接到充当锚定垫的对应的接合垫平台上。装置管芯接合在散热器装置组装件上并且装置管芯接合垫导电接合到对应的接合垫平台。线接合的装置管芯、散热器组装件和引线框阵列囊封在模塑料中。
本发明的上述概述并非意图表示本发明的每个所公开的实施例或每个方面。在图式和随后的具体实施方式中提供其它方面和实例实施例。
附图说明
结合附图,考虑到本发明各种实施例的以下详细描述,可以更彻底地理解本发明,在附图中:
图1是根据本发明的实例组装过程的流程图;
图2A-2I是根据本发明的与装置管芯组装在一起的矩阵散热器框的各种视图;以及
图3A-3B是根据本发明组装的暴露的散热器HVQFN封装的视图。
虽然本发明容许各种修改和替代形式,但已借助于实例在图式中示出并将详细描述其细节。然而,应理解,并非意图将本发明限于所描述的具体实施例。相反,本发明意图涵盖属于如由所附权利要求书限定的本发明的精神和范围内的所有修改、等效内容及替代方案。
具体实施方式
随着便携式系统的复杂性的增大,相应地需要减小组成系统的个体组件的尺寸;该系统通常布置在印刷电路衬底上。减小个体组件的尺寸的一种办法是通过减小包括这些装置的封装的尺寸的技术。通常使用的一种封装是QFN(四方扁平无引线)封装以减小附接到系统印刷电路衬底的装置的垂直构型。然而,一些应用可能需要QFN装置处理可能向装置管芯和封装施加热应力的足够的电力。因此,需要散热器来耗散任何余热;然而散热器不能明显增加垂直构型。需要可以容纳具有可接受构型的散热器的装置管芯的QFN或类似封装。
已发现本发明能用于增强组装在HVQFN封装中的电力FET装置的散热特性。这些装置可以预期耗散大约100mW到大约5W或更多。
实例装置的尺寸可以在从3×3mm到最多20×20mm的范围内。散热器阵列将是大约70×250mm的HVQFN条带尺寸(或稍小),使得它可以容纳在200mm的锯切系统上。
因此,取决于散热器尺寸,此工具可容纳处于50(对于较大封装尺寸)到2500(对于较小封装尺寸)的范围内的某物。引脚的数目可介于最少3个引脚(包括散热器)到大约100个引脚的范围内,如在一个封装中组合电力装置和控制器的实例中。散热器尺寸将取决于具体装置的电力处理要求。
在一个实例过程中,晶片向下接地到大约200μm以制备将最终组装到散热器上的装置管芯。为了进一步减小垂直构型,在另一实例过程中,背面研磨厚度可以减小到50μm,在此过程之后应用背侧金属化。此金属化处于若干微米的数量级。可以应用一种或更多种金属化沉积技术或甚至它们的组合(例如,初始溅镀层,该初始溅镀层的厚度通过镀覆过程增大)。金属化提供管芯背侧上的可焊表面以用于管芯到散热器的最佳热(和电)接触。管芯胶合也是可能的,但是一般而言将具有较低热接触。
本发明避免了将单独的散热器附接到QFN封装的需要,其中封装的下侧与PCB直接接触;PCB提供可以耗散热量的较大区域。在制备 装置的下侧之后,在QFN引线框中组装之前将装置管芯附接到散热器部分提供了用于常规的QFN配置中的装置管芯封装的更好的热量扩散。
参考图1,在根据本发明的实例过程100中,晶片衬底在其下侧上经历背面研磨到规定的厚度110。在背面研磨之后,合适的可接合导电表面应用于晶片的下侧115。可接合导电表面可以用多种技术应用,这些技术包括但不限于溅镀、蒸镀、化学气相沉积、电镀覆或其组合。可接合导电表面可以包括NiAu、Cu、NiAg或其它合适的合金。在涂覆晶片的晶片下侧之后,将晶片切块,并且具有可接合下侧的装置管芯被分离出120。晶片的切块可以通过锯切、劈切、激光消融或其它合适的方法完成。
在另一实例过程中,具有可接合下侧表面的装置管芯可以用单独的过程或通过第三方预先制备。制备好的装置管芯接合到散热器阵列,如本发明中所描述。
此可接合表面仅在焊接的情况下需要并且在需要到Si背侧的良好的电接触时需要。替代地,对于管芯胶合,采用金属化形式的可接合背侧是可接受的,只要使用合适的导热胶适当地粘附到Si管芯。
如通过装置管芯类型所确定,制备散热器阵列125。在制备散热器阵列之后,在散热器阵列上将装置管芯接合在管芯附接区域中130。可以将具有可焊底侧的装置管芯回流焊接到散热器阵列的管芯附接区域上125。在本发明中,散热器排列在散热器框(HS)中。HS阵列允许高温管芯接合的使用。引线框免受工艺温度的有害影响,这些影响包括可能引起不良模塑料粘附或线接合问题的引线框氧化。并且对于HVQFN在组装期间通常使用模具胶带;模具胶带无法承受大于180℃的温度超过几分钟。使用者可利用较高温度管芯附接技术,该较高温度管芯附接技术可以包括但是未必限制于焊接、共熔、银(Ag)烧结、导电粘合等。举例来说,Ag烧结在大约200℃到大约300℃下执行,Pb焊接在大约350℃下执行,共熔在大约400℃下执行,并且导电粘合在150℃到250℃下执行。
另外,高温可能无法与粘合剂载带的使用兼容;因为高温会使条带 降解。
将附接了装置管芯的散热器阵列放置在切块箔片上并且单切(通过锯切)到个体组装件中135。针对装置管芯/散热器组装件的类型,选择合适的引线框阵列140。举例来说,八引脚装置将需要对应于装置的每个引脚的至少八个垫平台的引线框,以及用于散热器附接的接触区域。将引线框阵列连同装置管芯/散热器组装件一起放置到载带上145。将装置管芯/散热器组装件附接到引线框150。引线框上的安装位置具有胶或其它附接手段以提供到散热器上的安装耳片的接合。
将装置线接合到引线框阵列上的接合垫区域155。将装置管芯/散热器组装件的阵列和引线框阵列囊封在模塑料中160。
在另一实例实施例中,可将管芯/散热器组装件只附接到模具条带(而不连接到引线框接合耳片)。
在线接合和囊封之后,移除载带。随后将囊封的装置的组装阵列锯切成个体组装装置,这些个体组装装置的引线框接触与暴露的散热器一样也是暴露的170;这些暴露的接触区域将是共面的。散热器和暴露引线框接触将经过适当地制备,使得它们的表面与焊料有足够亲和性。
在另一实例实施例中,线接合的使用可能是不适当的,尤其是在最小化互连电感和/或电阻至关重要的情况下。通常可使用带式接合。对于给定应用,线接合可具有大约25.4μm的给定直径(.001英寸)并且带式接合可具有大约25.4μm×76.2μm(.001英寸×.003英寸)的截面。互连电感可能会引起阻抗失配、振铃效应(ringing)、失真脉冲。对于高速电路,过量电感会引起带宽减小。由于对减小的电感的此需要,通常可能规定带式接合而不是线接合。这一点尤其适用于例如群组延迟等参数必须在非常宽的带宽上受到控制的宽带组件。带式接合可以是优选的,因为典型的带式接合的电感是线接合的二分之一到三分之一。与典型的线接合相比,增大的截面积能降低典型带式接合的电阻,其继而降低相关电路径中的RDSon。更详细的信息可查阅“快速使用说明:带式接合与线接合的比较(QuickReference Guide:Ribbon Bond vs.Wire Bond)”,第4页(NATEL工程技术有限公司,美国加利福尼亚州查特斯沃思)。
装置管芯/散热器组装件可以被配置成例如50mm×150mm或100mm×300mm的条带。可以使用的管芯尺寸在大约1mm×1mm到大约20mm×20mm的范围内。装置引脚的数目可以在2个到50个或更多个的范围内。
在实例实施例中,如图2A-2I中所描绘,一系列视图示出了根据本发明的装置管芯的组装件。图2A-2B示出框中的散热器阵列200。虽然图示出了两行和三列的阵列(对于总共六个装置),但是用于IC装置生产中的此类阵列可以是数千个装置位置构成的数百个行和列。具有安装耳片230的个体散热器210排列在框220中。图2C-2D示出附接到每个散热器位置的装置管芯235。装置管芯235可以焊接(例如,软焊、共熔焊接或铜焊/锡焊等)或通过导电剂215附接到散热器阵列位置210。散热器阵列大致是实际QFN引线框的厚度的两倍,并且在连接杆220的下侧表面和安装耳片230的下侧表面233上半蚀刻。在实例封装中,散热器大约是0.4mm厚且半蚀刻到大约0.2mm。在安装装置管芯235之后,将散热器阵列200安装到切块箔片25上。
参考图2E-2F。散热器阵列200的半蚀刻区域经过锯切以获得个体装置/散热器组装件240。
参考图2FF-2G。实例引线框组装件205具有六个位置的阵列。引线框组装件205安装到锯切/切块带55上。连接杆250维持接合垫255之间的几何关系,以便限定装置位置245。接合垫255最终是成品装置的I/O端。每个装置位置245中的四个锚定垫260(选自接合垫255)是通过胶或焊膏的点265制备的,以附接装置/散热器组装件240的安装耳片230的下侧表面233。
参考图2H-2I。个体装置/散热器组装件240安装在每个装置位置245中。安装耳片230安装到锚定垫260。装置安装的放大视图275示出上面涂敷了胶或焊料265的锚定耳片260。安装耳片230通过胶或焊料265锚定到耳片260。装置管芯210通过焊料型附接215附接到散热器210。
个体装置/散热器组装件240通过线接合。线接合的装置囊封在模塑料中。引线框连接杆250在单切过程中移除。接合垫255、锚定垫260 和散热器210的下侧表面有利于将装置安装到系统印刷电路板上。
参考图3A-3B。在根据本发明的实例实施例中,在引线框阵列300中,散热器310在所选位置365处可以用铆接或激光焊接在锚定垫360处。
制造的装置的数目可以在数百到甚至数千件的范围内。QFN封装尺寸可在一侧上从几毫米降至大约0.5mm×1mm的范围。其它无引线(基于金属的)封装可以包括,但是未必限制于aQFN(高级四方扁平无引线)、LLGA(无引线连接盘栅格阵列)、TLA(热无引线阵列)、EFLGA(电铸型连接盘栅格阵列)和TLEM(transcription lead of electroformingmethod,电铸方法的转录引线)等。本发明中的实施例也可以在例如HSOP(散热板轮廓封装)、HQFP(热沉四方扁平封装)或其它类似封装类型等暴露垫引线装置中实施。
通过在装置管芯到散热器部分上的管芯附接时,能够将较高温度处理应用于管芯附接过程,组装出功耗性能更高并且可靠性得到改进的QFN装置。管芯附接过程单独发生并且因此使QFN引线框或载体免受管芯附接过程的影响。
参考特定说明性实例描述各种示例性实施例。选择说明性实例来辅助本领域的一般技术人员形成对各种实施例的清晰理解且实践所述各种实施例。然而,可被建构成具有所述实施例中的一个或多个的系统、结构和装置的范围,以及可根据所述实施例中的一个或多个实施的方法的范围决不限于已经呈现的特定说明性实例。相反,如相关领域的一般技术人员基于此描述将容易认识到,可根据所述各种实施例实施许多其它配置、布置和方法。
在例如顶部、底部、上部、下部等位置名称用于描述本发明的程度上,将了解那些名称是参考对应的图式给定的,并且如果在制造或操作期间装置的朝向发生改变,那么可替代地应用其它位置关系。如上文所描述,出于清楚起见(而非限制)描述那些位置关系。
已相对于具体实施例且参考特定图式描述本发明,但本发明不限于此,而是实际上仅由权利要求书陈述。所描述的图式仅是示意性的,并 且是非限制性的。在图式中,出于说明性目的,各种元件的大小可被夸示且未按具体比例绘制。希望本发明涵盖组件及其操作模式的相关容差和特性的微不足道的变化。希望涵盖本发明的不完全实践。
在本发明的说明书和权利要求书中使用术语“包括”时,并不排除其它要素或步骤。在指代单数名词时使用例如“一个”、“一”或“所述”等不定冠词或定冠词的情况下,这包括了该名词的复数,除非另外明确地陈述了其它情况。因此,术语“包括”不应解释为限于其后所列的项目;它并不排除其它要素或步骤,且因此“包括项目A和B的装置”这种表达的范围不应限于仅由组件A和B组成的装置。此表达表示,相对于本发明,装置的唯一相关组件是A和B。
在不脱离如所附权利要求书中限定的本发明的精神和范围的情况下,本发明的众多其它实施例对于本领域的技术人员是显而易见的。
Claims (14)
1.一种用于制备集成电路(IC)装置的方法,其特征在于,所述方法包括:
提供具有顶侧表面和下侧表面的散热器阵列,所述散热器阵列具有带至少两个安装耳片的多个散热器部分,所述多个散热器部分在所述散热器阵列中通过所述至少两个安装耳片固定地保持在一起,所述安装耳片通过连接杆彼此耦合,每个散热器部分具有在所述顶侧表面上的管芯布置区域;
其中,所述多个散热器部分具有第一厚度,并且所述安装耳片和所述连接杆具有第二厚度,所述第一厚度大约是所述第二厚度的两倍;
管芯接合多个有源装置管芯到所述多个散热器部分中的所述管芯布置区域上,由此形成多个装置管芯/散热器组装件;以及
锯切穿过所述连接杆以便将所述多个装置管芯/散热器组装件单切成个体散热器装置组装件。
2.根据权利要求1所述的方法,其特征在于,管芯接合是选自以下各项中的至少一项的高温处理:焊接、共熔、Ag烧结、导电粘合。
3.根据权利要求2所述的方法,其特征在于,进一步包括:
提供具有多个管芯布置区域的引线框阵列,每个管芯布置区域具有接合垫平台,所述接合垫平台在一个或多个侧面上位于围绕管芯布置区域处,所述接合垫平台具有上表面和相对的下表面;
在每个管芯布置区域中放置散热器装置组装件,并且将所述至少两个安装耳片附接到充当锚定垫的对应的接合垫平台上;
将所述散热器装置组装件上的所述装置管芯导电接合到其它对应的接合垫平台;以及
在模塑料中囊封所述线接合的散热器装置组装件与引线框阵列;以及
其中暴露所述散热器装置组装件的所述下侧表面和所述接合垫平台的所述相对的下表面。
4.根据权利要求3所述的方法,其特征在于,将所述至少两个安装耳片附接到所述锚定垫是以下各项中的一项:导电胶、软焊接、共熔焊接、铜锡焊接、激光焊接、铆接。
5.根据权利要求4所述的方法,其特征在于,
其中接合垫平台围绕所述引线框阵列上的每个管芯布置区域;以及
其中所述至少两个安装耳片是四个,两个安装耳片在一侧上,两个安装耳片在相对的另一侧上。
6.根据权利要求3所述的方法,其特征在于,将所述散热器管芯导电接合到所述垫平台包括以下各项中的至少一项:线接合、带式接合、夹子接合。
7.根据权利要求5所述的方法,其特征在于,所述引线框选自以下封装类型中的一种:HVQFN、QFN、aQFN、LLGA、TLA、EFLGA、TLEM、HSOP、HQFP。
8.一种集成电路(IC),其特征在于,包括:
有源装置管芯,其具有顶侧表面和下侧表面;
可接合管芯附接层,其位于所述有源装置管芯的所述下侧表面上;以及
散热器组装件,其具有顶部表面和相对的下侧表面以容纳所述有源装置管芯,并且其中所述有源装置管芯经由所述可接合管芯附接层接合到所述散热器组装件的所述顶侧表面,
其中所述散热器组装件具有至少两个安装耳片,所述安装耳片具有第一厚度并且所述散热器组装件具有第二厚度,所述第一厚度大约是所述第二厚度的一半;
引线框,其具有顶侧表面和相对的下侧表面,所述引线框具有围绕所述有源装置和散热器组装件的垫平台,其中导电接合将有源装置管芯接合垫连接到所述引线框上的所述垫平台,其中所述至少两个安装耳片锚定到充当锚定垫的对应的垫平台上;
囊封物,其封包所述有源装置管芯、散热器组装件和引线框,其中所述引线框的所述下侧表面和所述散热器组装件的所述下侧表面是暴露的且共面的。
9.根据权利要求8所述的IC,其特征在于,导电接合包括以下各项中的至少一项:线接合、带式接合、夹子接合。
10.根据权利要求8所述的IC,其特征在于,所述可接合管芯附接层是以下各项中的一项:软焊料、共熔焊料、铜/锡焊料、银烧结物。
11.一种用于制备具有增强的散热的集成电路(IC)装置的方法,其特征在于,所述方法包括:
提供第一厚度的引线框阵列,其具有多个管芯布置区域,每个管芯布置区域具有接合垫平台,所述接合垫平台在一个或多个侧面上位于围绕管芯布置区域处,所述接合垫平台具有上表面和相对的下表面;
在每个管芯布置区域中放置第二厚度的散热器组装件,该散热器组装件具有所述第一厚度的至少两个安装耳片,并且将所述至少两个安装耳片附接到充当锚定垫的对应的接合垫平台上;
在所述散热器装置组装件上管芯接合装置管芯;
将装置管芯接合垫导电接合到对应的接合垫平台;以及
在模塑料中囊封所述线接合的装置管芯、散热器组装件和引线框阵列。
12.根据权利要求11所述的方法,其特征在于,通过以下各项中的至少一项附接所述至少两个安装耳片:铆接、激光焊接。
13.根据权利要求11所述的方法,其特征在于,所述第一厚度大约是所述第二厚度的一半。
14.根据权利要求13所述的方法,其特征在于,所述散热器组装件具有在第一侧面上的两个安装耳片以及在相对的第二侧面上的两个安装耳片。
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