TW201709404A - 高溫基板底座模組及其元件 - Google Patents

高溫基板底座模組及其元件 Download PDF

Info

Publication number
TW201709404A
TW201709404A TW105114246A TW105114246A TW201709404A TW 201709404 A TW201709404 A TW 201709404A TW 105114246 A TW105114246 A TW 105114246A TW 105114246 A TW105114246 A TW 105114246A TW 201709404 A TW201709404 A TW 201709404A
Authority
TW
Taiwan
Prior art keywords
shank
adapter
semiconductor substrate
groove
platform
Prior art date
Application number
TW105114246A
Other languages
English (en)
Other versions
TWI708315B (zh
Inventor
特洛伊 亞倫 戈姆
提摩西 湯瑪士
Original Assignee
蘭姆研究公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 蘭姆研究公司 filed Critical 蘭姆研究公司
Publication of TW201709404A publication Critical patent/TW201709404A/zh
Application granted granted Critical
Publication of TWI708315B publication Critical patent/TWI708315B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/54—Providing fillings in containers, e.g. gas fillings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

一種半導體基板處理設備，其包含：一真空腔室，可於其中處理半導體基板；一噴淋頭模組，來自處理氣體源的處理氣體係經由噴淋頭模組而供應至真空腔室的處理區域；及一基板底座模組。基板底座模組包括：一平臺；一柄桿，其具有定義一圓柱狀內部區域之一側壁、一下表面、及支撐平臺之一上端；及一接合器，其具有定義一圓柱狀內部區域之一側壁及支撐柄桿之一上表面。柄桿的下表面包括進氣口，該進氣口係與設置在柄桿的側壁中之各別氣體通道及設置在接合器的上表面中之環狀氣體通道內的排氣口呈流體連通。接合器的上表面包括設置在排氣口的徑向內側之一內溝槽及設置在內溝槽的徑向外側之一外溝槽。內溝槽及外溝槽之中具有各別O形環，以在處理期間形成真空密封。平臺包括至少一平臺氣體通道，該至少一平臺氣體通道係與柄桿的側壁中之各別氣體通道呈流體連通，當處理期間將半導體基板支撐在平臺的上表面上時，背面氣體可經由該氣體通道而供應至半導體基板下方的區域。

Description

高溫基板底座模組及其元件
本發明有關用以處理半導體基板的半導體基板處理設備，尤其能用於可操作以在半導體基板的上表面上沉積薄膜之電漿輔助化學氣相沉積處理設備之中。
半導體基板處理設備係用以藉由一些技術來處理半導體基板，這些技術包括：蝕刻、物理氣相沉積（PVD，physical vapor deposition）、化學氣相沉積（CVD，chemical vapor deposition）、電漿輔助化學氣相沉積（PECVD，plasma-enhanced chemical vapor deposition）、原子層沉積（ALD，atomic layer deposition）、電漿輔助原子層沉積（PEALD，plasma-enhanced atomic layer deposition）、脈衝式沉積層（PDL，pulsed deposition layer）、電漿輔助脈衝式沉積層（PEPDL，plasma-enhanced pulsed deposition layer）處理、及光阻移除。半導體基板處理設備其中一種類型為包括一反應腔室的電漿處理設備，而該反應腔室包含上電極及下電極，其中將射頻（RF，radio frequency）電力施加在這些電極之間，以使處理氣體激發成電漿，從而處理反應腔室中之半導體基板。
於此所揭露者係一種用以處理半導體基板的半導體基板處理設備，其包括高溫基板底座模組，該高溫基板底座模組於柄桿的下表面與接合器（支撐該柄桿）的上表面之間具有最小化的裝設面積。半導體基板處理設備包含：一真空腔室，其包括一處理區域，可在處理區域之中處理半導體基板；一噴淋頭模組，來自處理氣體源之處理氣體係經由噴淋頭模組而供應至真空腔室的處理區域；及一基板底座模組。基板底座模組包括：一平臺，其具有一上表面，該上表面係配置以在處理期間將半導體基板支撐於其上；由陶瓷材料所製成之一柄桿，其具有一側壁（定義一圓柱狀內部區域）、一下表面、及一上端（支撐該平臺）；及一接合器，其具有一側壁（定義一圓柱狀內部區域）及一上表面（接附至柄桿的下表面）。
柄桿的下表面包括至少一進氣口，該至少一進氣口係與設置在柄桿的側壁中之各別氣體通道呈流體連通。該至少一進氣口係與設置在接合器的上表面中之環狀氣體通道內的至少一排氣口呈流體連通。接合器的上表面包括設置在至少一排氣口的徑向內側之一內溝槽及設置在內溝槽的徑向外側之一外溝槽。內溝槽之中具有一內側O形環，以在處理期間於接合器的圓柱狀內部區域與至少一排氣口之間形成內部真空密封。外溝槽之中具有一外側O形環，以在處理期間於圍繞接合器的側壁之一區域與至少一排氣口之間形成外部真空密封。平臺包括至少一平臺氣體通道，該至少一平臺氣體通道係與柄桿的側壁中之各別氣體通道呈流體連通，當處理期間將半導體基板支撐在平臺的上表面上時，背面氣體可經由氣體通道而供應至半導體基板下方的區域。
亦於此所揭露者係一種半導體基板處理設備的高溫基板底座模組。高溫基板底座模組包含一平臺及一柄桿，該平臺具有一上表面，該上表面係配置以在處理期間將半導體基板支撐於其上，且該柄桿具有定義一圓柱狀內部區域之一側壁、一下表面、及支撐平臺之一上端。柄桿的下表面係配置以接附至接合器的上表面。柄桿的下表面包括一環狀氣體通道，該環狀氣體通道之中具有至少一進氣口，其中該至少一進氣口係與設置在柄桿的側壁中之各別氣體通道呈流體連通，且柄桿的下表面中之該至少一進氣口係配置成當柄桿接附至接合器時，柄桿的下表面中之該至少一進氣口與接合器的上表面中之至少一排氣口呈流體連通。平臺包括至少一平臺氣體通道，該至少一平臺氣體通道係與柄桿的側壁中之各別氣體通道呈流體連通，當處理期間將半導體基板支撐在平臺的上表面上時，背面氣體可經由氣體通道而供應至半導體基板下方的區域。
更於此所揭露者係一種半導體基板處理設備的高溫基板底座模組之接合器。接合器係配置以支撐半導體基板處理設備的真空腔室中之基板底座模組的柄桿。接合器包含一側壁（定義接合器的一圓柱狀內部區域）及一上表面（配置以接附至柄桿的下表面）。接合器的上表面包括一環狀氣體通道，該環狀氣體通道具有至少一排氣口，該至少一排氣口係與設置在接合器的側壁中之各別氣體通道呈流體連通。該至少一排氣口係配置成當接合器的上表面接附至柄桿的下表面時，該至少一排氣口與柄桿的下表面中之至少一進氣口呈流體連通。接合器的上表面包括設置在至少一排氣口的徑向內側之一內溝槽及設置在內溝槽的徑向外側之一外溝槽。內溝槽係配置成其中包括一內側O形環，當接合器接附至柄桿時，使接合器的圓柱狀內部區域與至少一排氣口之間於處理期間形成內部真空密封。外溝槽係配置成其中包括一外側O形環，當接合器接附至柄桿時，使圍繞接合器的側壁之一區域與至少一排氣口之間於處理期間形成外部真空密封。
在以下詳細說明中，為了提供對於本文所揭露之設備及方法的徹底瞭解而提出許多具體實施方式。然而，如同本領域中具有通常知識者將輕易瞭解，可在不具這些具體細節或藉由使用替代元件或製程的情況下實現這些實施方式。在其他情況下，不再詳細敘述熟知的製程、程序、及/或構件，以免不必要地模糊了於此所揭露之實施態樣。如於此所使用之用語「約」是指±10%。
如所示般，本文之實施方式提供了用以處理半導體基板處理設備（如化學氣相沉積或電漿輔助化學氣相沉積設備）中之半導體基板的設備及相關方法。這些設備及方法特別適合與半導體基板的高溫製程（例如高溫沉積製程）結合使用，其中進行處理中之半導體基板係加熱至高於約550℃的溫度（例如約550℃至約650℃、或更高）。
於此所揭露之實施方式係較佳地實現在電漿輔助化學沉積設備（亦即PECVD設備、PEALD設備、或PEPDL設備）中；然而，其並不限於此。圖1提供一簡明方塊圖，其繪示為實現如於此所揭露之實施方式所設置之各種半導體基板電漿處理設備構件。如圖所示，半導體基板電漿處理設備300包括真空腔室324，其用以將電漿容納在處理區域中，可藉由噴淋頭模組314（其中具有一上部RF電極（未顯示））與基板底座模組320（其中具有一下部RF電極（未顯示））結合運作而產生電漿。至少一RF產生器係可操作成供應RF能量至真空腔室324中之半導體基板316的上表面上方之處理區域內，以將供應至真空腔室324之處理區域內的處理氣體激發成為電漿，而使電漿沉積製程能在真空腔室324中執行。舉例而言，可將高頻RF產生器302及低頻RF產生器304各自連接至匹配網路306，而匹配網路306係連接至噴淋頭模組314的上部RF電極，以使RF能量能供應至真空腔室324中之半導體基板316上方的處理區域。
由匹配網路306供應至真空腔室324內部的RF能量之功率及頻率係足以由處理氣體產生電漿。在一實施方式中，高頻RF產生器302及低頻RF產生器304二者皆有使用，而在一替代實施方式中，僅使用高頻RF產生器302。在一製程中，高頻RF產生器302可操作在約2-100 MHz的頻率；而在一較佳實施方式中，其可操作在13.56 MHz或27 MHz。低頻RF產生器304可操作在約50 kHz至2 MHz；而在一較佳實施方式中，其可操作在約350至600 kHz。製程參數可基於腔室容積、基板尺寸、及其他因素而進行調整。同樣地，處理氣體的流速可取決於真空腔室或處理區域的自由容積。
於真空腔室324內的處理期間，基板底座模組320的上表面支撐半導體基板316。基板底座模組320可包括：用以夾持半導體基板之夾具，及/或用以在沉積及/或電漿處理製程之前、期間、及/或之後使半導體基板上升及下降之升降銷。在一替代實施方式中，基板底座模組320可包括承載環，其係用以在沉積及/或電漿處理製程之前、期間、及/或之後使半導體基板上升及下降。夾具可為靜電式夾具、機械式夾具、或如可供工業及/或研究使用的各種其他類型之夾具。包括靜電夾具之基板底座模組的升降銷組件之細節可見於共同讓與之美國專利第8840754號，其係於此全部併入作為參考。基板底座模組之承載環的細節可見於共同讓與之美國專利第6860965號，其係於此全部併入作為參考。背面氣體供應器341係可操作成在處理期間供應熱能傳遞氣體或清理氣體通過基板底座模組320而至半導體基板的下表面下方之區域。基板底座模組320之中包括下部RF電極，其中該下部RF電極係較佳地於處理期間接地；然而在一替代實施方式中，於處理期間可供應RF能量給該下部RF電極。
為處理半導體基板電漿處理設備300之真空腔室324中的半導體基板，故將處理氣體從處理氣體源362經由入口312及噴淋頭模組314導入真空腔室324內，其中在具有RF能量的情況下將處理氣體形成為電漿，以使膜能沉積在半導體基板的上表面上。在一實施方式中，處理氣體源362可包含連接至加熱歧管308的多數氣體線路310。這些氣體可預先混合或分別供應至腔室。採用適當的閥門調節方式及質量流量控制機制以確保在半導體基板處理期間經由噴淋頭模組314遞送正確的氣體。於處理期間，將背面熱能傳遞氣體或清理氣體供應至半導體基板（支撐在基板底座模組320上）的下表面下方之區域。較佳地，該處理係化學氣相沉積處理、電漿輔助化學氣相沉積處理、原子層沉積處理、電漿輔助原子層沉積處理、脈衝式沉積層處理、或電漿輔助脈衝式沉積層處理其中至少一者。
在一些實施方式中，系統控制器162係用以控制沉積期間之製程條件、後沉積處理、及/或其他製程操作。控制器162通常會包括一或更多記憶體裝置及一或更多處理器。處理器可包括CPU或電腦、類比及/或數位輸入/輸出連接、步進馬達控制板等等。
在一些實施方式中，控制器162控制設備的全部動作。系統控制器162執行系統控制軟體，系統控制軟體包括用以控制下列參數之指令集：處理操作之時序、低頻RF產生器304及高頻RF產生器302之操作頻率及功率、先驅物及惰性氣體之流速和溫度及其相對混合情況、支撐在基板底座模組320的上表面上之半導體基板316及噴淋頭模組314的電漿曝露表面之溫度、真空腔室324之壓力、及特定處理的其他參數。在一些實施方式中，可使用儲存在與控制器相關之記憶體裝置上的其他電腦程式。
通常，會有與控制器162相關的使用者介面。使用者介面可包括：顯示螢幕、設備及/或製程條件的圖形軟體顯示、及使用者輸入裝置（如指標裝置、鍵盤、觸控螢幕、麥克風等等）。
非暫態電腦機器可讀媒體可包含用以控制設備的程式指令。可用任何習知電腦可讀程式語言撰寫用以控制處理操作的電腦程式碼，例如組件語言、C、C++、Pascal、Fortran、或其他程式語言。藉由處理器執行編譯目標碼或腳本，以完成程式中確認的工作。
控制器參數與製程條件有關，如處理步驟之時序、先驅物及惰性氣體之流速及溫度、半導體基板之溫度、腔室之壓力、及特定製程的其他參數。這些參數係以配方的形式提供給使用者，並且可利用使用者介面輸入。
可藉由系統控制器的類比及/或數位輸入連接來提供用以監控製程之信號。用以控制製程之信號係輸出在設備的類比及數位輸出連接上。
可用許多不同的方式來設計或配置系統軟體。例如，可撰寫各種腔室構件子程序或控制目標碼來控制完成沉積製程所需之腔室構件的操作。用於此用途之程式或程式片段的範例包括：處理步驟之基板時序碼、先驅物及惰性氣體之流速及溫度碼、及真空腔室324之壓力碼。
圖2-7顯示根據於此所揭露之實施方式之基板底座模組320的橫剖面。如圖2-7所示，基板底座模組320包括平臺205，平臺205具有由陶瓷材料製成的曝露表面。平臺205具有一上表面206，上表面206係可操作成在半導體基板的處理期間將半導體基板支撐於其上。由陶瓷材料製成的柄桿210從平臺205的下表面向下延伸，其中柄桿210的一上端214支撐平臺205。較佳地，柄桿205的上端214包括上部凸緣，其係與平臺205的下部陶瓷表面結合（焊接、鍛接、擴散結合、或其他適合的技術）。藉由陶瓷材料（而不是金屬材料，如鋁或鋁合金）製成基板底座模組320的柄桿210及平臺205，則基板底座模組320在高溫基板處理期間可耐受高溫，例如大於約550℃的溫度或大於約650℃的溫度。
平臺205可包括嵌入於其中的至少一靜電夾持電極209，其中該至少一靜電夾持電極209係可操作成在處理期間將半導體基板靜電式夾持在平臺205的上表面206上。如圖2及4-7所示，平臺205亦可包括一下部RF電極265，於半導體基板處理期間可將其接地或供以RF電力。較佳地，如圖3所示，平臺205僅包括嵌入於其中的一單電極209a，而單電極209a兼作為靜電夾持電極及RF電極。再參考圖2-7，平臺205亦可包括嵌入於其中的至少一加熱器260，其係可操作成在處理期間控制平臺205的上表面206各處之溫度，並從而控制半導體基板各處之溫度。該至少一加熱器260可包括電阻式加熱膜及/或一或更多熱電模組。較佳地，連接到至少一靜電夾持電極209、至少一加熱器260、單電極209a、及/或下部RF電極265的電性連接係設置在柄桿210的圓柱狀內部區域215之中，該圓柱狀內部區域215係由柄桿210的側壁211所定義。電性連接可分別連接至形成在平臺205中的電性接觸部（未顯示），而電性接觸部係與至少一靜電夾持電極209、至少一加熱器260、單電極209a、及/或下部RF電極265各別呈電性連通。以此方式，在半導體基板處理期間可供電給至少一靜電夾持電極209、至少一加熱器260、單電極209a、及/或下部RF電極265。
在一實施方式中，平臺205可包括藉由擴散結合在一起的多數分離層，其中至少一靜電夾持電極209、下部RF電極265（或單電極209a）、及至少一加熱器260可夾在平臺205的多數分離層之間。較佳地，平臺205的上表面206包括形成於其中的臺面圖案206a，其中半導體基板的下表面係支撐在臺面圖案206a上，並且背面清理氣體或背面熱能傳遞氣體可供應至位在半導體基板下方且介於臺面圖案206a之臺面間的區域。臺面圖案及形成臺面圖案的方法之一示範實施方式可見於共同讓與之美國專利第7869184號，其係於此全部併入。在一實施方式中，基板底座模組320可包括一加熱屏蔽（未顯示），其係可操作以降低平臺205的上部與柄桿210之間的熱能傳遞。包括加熱屏蔽的基板底座模組之一示範實施方式可見於共同讓與之美國專利第8753447號，其係於此全部併入。
較佳地，平臺205及柄桿210的曝露表面係由陶瓷材料所製成，當平臺205及柄桿210係曝露至處理條件時，這在處理期間比較不會導致基板污染。較佳地，平臺205及柄桿210的曝露表面係由鋁氮化物所製成。
柄桿210包括下表面213，其係接附至接合器220的上表面223，以使基板底座模組320能支撐在半導體基板處理設備的真空腔室中。接合器220具有側壁221，其定義一圓柱狀內部區域225。柄桿210的下表面213包括至少一進氣口216，其係與設置在柄桿210之側壁211中的各別氣體通道217呈流體連通。柄桿210的至少一進氣口216係與接合器220的上表面223中之至少一排氣口224呈流體連通，其中該至少一排氣口224係與接合器220的側壁221中之各別氣體通道232呈流體連通。平臺205包括至少一平臺氣體通道280，其係與柄桿210的側壁211中之各別氣體通道217呈流體連通。在半導體基板處理期間，背面氣體可從背面氣體供應器（其係與接合器220的側壁221中之至少一氣體通道232呈流體連通）經由柄桿210的至少一氣體通道217而供應至半導體基板（當此半導體基板支撐在平臺205的上表面206上時）下方的區域。
現在參考圖2、5、及6，接合器220的上表面223中之至少一排氣口224係較佳地設置在接合器220的上表面223中之一環狀氣體通道242內。如本文所使用般，用語「環狀氣體通道」可指形成下列之氣體通道：形成一個不中斷環狀路徑的氣體通道、沿著一環狀路徑部份延伸的氣體通道、或各自沿著具有一共同中心點之各別環狀路徑延伸的二或更多氣體通道（其中各氣體通道係彼此呈流體隔離）。接合器220的上表面223亦包括一內溝槽226及一外溝槽227，內溝槽226係設置在至少一排氣口224的徑向內側，且外溝槽227係設置在內溝槽226的徑向外側。內溝槽226之中具有一內側O形環230，以致在半導體基板處理期間於接合器220的圓柱狀內部區域225與至少一排氣口224之間形成內部真空密封。外溝槽227之中具有一外側O形環231，以致在半導體基板處理期間於圍繞接合器220之側壁221的區域與至少一排氣口224之間形成外部真空密封。
現在參考圖5及6，接合器220的上表面223中之環狀氣體通道242係較佳地形成在接合器220的外溝槽227之徑向內側部份中，其中外側O形環231係設置在外溝槽227的徑向外側部份。
在一替代實施方式中，如圖3、4、及7所示，環狀氣體通道252係包括在柄桿210的下表面213中，以代替接合器220的上表面223中之環狀氣體通道242，或者除了環狀氣體通道242以外還有環狀氣體通道252（見圖2）。接合器220的至少一排氣口224係與柄桿210的下表面213中之環狀氣體通道252呈流體連通。柄桿210的下表面213中之至少一進氣口216係設置在形成於柄桿210的下表面213中之環狀氣體通道252內。在柄桿210的下表面213包括環狀氣體通道252且接合器220的上表面223包括環狀氣體通道242之實施方式中，環狀氣體通道242、252係彼此相鄰排列，以使其呈流體連通。
參考圖3，接合器220的上表面223較佳地包括一內溝槽226及一外溝槽227，內溝槽226係設置在至少一排氣口224的徑向內側，且外溝槽227係設置在內溝槽226的徑向外側。內溝槽226之中具有一內側O形環230，以致在半導體基板處理期間於接合器220的圓柱狀內部區域225與至少一排氣口224之間形成內部真空密封。外溝槽227之中具有一外側O形環231，以致在半導體基板處理期間於圍繞接合器220之側壁221的區域與至少一排氣口224之間形成外部真空密封。
現在參考圖4，柄桿210的下表面213可包括一內溝槽250及一外溝槽251，以代替接合器220的上表面223中之內溝槽226及外溝槽227，或者除了內溝槽226及外溝槽227以外還有內溝槽250及外溝槽251（見圖2）。內溝槽250之中具有一內側O形環230，以致在半導體基板處理期間於接合器220的圓柱狀內部區域225與至少一排氣口224之間形成內部真空密封。外溝槽251之中具有一外部O形環231，以致在半導體基板處理期間於圍繞接合器220之側壁221的區域與至少一排氣口224之間形成外部真空密封。在柄桿210的下表面213包括內溝槽250及外溝槽251且接合器220的上表面223包括內溝槽226及外溝槽227之實施方式中，內溝槽250、226係較佳地彼此相鄰排列，以使各個內溝槽250、226包括內側O形環230的一部份，並且外溝槽251、227係較佳地彼此相鄰排列，以使各個外溝槽251、227包括外側O形環231的一部份。
現在參考圖7，柄桿210的下表面213中之環狀氣體通道252係較佳地形成在柄桿210的外溝槽251的徑向內側部份，其中外側O形環231係較佳地設置在外溝槽251的徑向外側部份。
現在參考圖2-7，柄桿210較佳地包括一下部外凸緣234，其從柄桿210的側壁211向外延伸，使得下部外凸緣234上方的柄桿210之側壁211厚度能減到最小，以在處理期間於平臺205與柄桿210的下表面213之間形成熱阻（thermal choke）。下部外凸緣234可包括貫孔（未顯示），以使基板底座模組320的柄桿210能利用緊固件（如螺栓、螺釘、或其類似者）而接附至接合器220的上表面223。於處理期間，柄桿210的圓柱狀內部區域215及接合器220的圓柱狀內部區域225係呈流體連通，並且藉由內側O形環230及外側O形環231密封而與真空環境隔離，以使圓柱狀內部區域215、225內能維持正壓。較佳地，圓柱狀內部區域215、225係曝露至大氣；然而在替代實施方式中，可將惰性或清理氣體唧送至其中。
柄桿210係由陶瓷所形成，且較佳地具有低導熱性以降低熱量從平臺205傳遞到柄桿210的下表面213與接合器220的上表面223之間的介面（內側及外側O形環230、231係設置在其中）。期望將此介面維持在較低溫度（例如約200℃至300℃）。例如，若內側及外側O形環230、231在處理期間受到過高溫度，則其將失效且柄桿210的圓柱狀內部區域215與圍繞柄桿210之側壁211的（真空）區域之間不再形成密封。除了下部外凸緣234（其允許柄桿210之側壁211的厚度能減小）以外，柄桿210較佳地包括一下部內凸緣233，其從柄桿210的側壁211向內延伸，使得下部內凸緣233上方的柄桿210之側壁211厚度能減到最小，以在半導體基板處理期間於平臺205與柄桿210的下表面213之間形成熱阻（見圖2-4、6、及7）。
較佳地，柄桿210之側壁211的厚度小於接合器220之側壁221的厚度，以使柄桿210的側壁211在半導體基板處理期間於平臺205與柄桿210的下表面213之間形成熱阻。在一實施方式中，位於柄桿210的下部凸緣上方的柄桿210之側壁211厚度為約3 mm或更小、且更佳地為約2 mm或更小。在一較佳實施方式中，柄桿210的側壁211厚度係選擇為正好大於柄桿210在半導體基板處理期間耐受其圓柱狀內部區域215（其係較佳地維持在大氣壓力）與圍繞側壁211（其係操作在降低或真空壓力）的區域之間的壓力差所需之最小厚度。
相較於用以形成柄桿210及平臺205之高純度陶瓷，接合器220係較佳地由金屬（如鋁或鋁合金）所形成，而此為較廉價之材料，並且也較不會在處理期間由於施加在其上的高壓力差而破裂。因此，藉由柄桿210的柄桿壁211形成熱阻，因而可使用以處理支撐在平臺205的上表面206上之半導體基板的高溫（例如550℃–650℃、或更高）與柄桿210的下表面213呈熱隔離，使得柄桿210能接附至鋁或鋁合金接合器220的上表面223，其中內側及外側O形環230、231將不會由於高溫而導致失效。再者，使柄桿210的側壁211形成熱阻，這能允許平臺205與柄桿210的下表面213之間的柄桿210長度縮短並能允許接合器220長度增加，因而節省材料成本。
如圖6所示，接合器220可包括其側壁221中之一氣體通道232，此氣體通道232係經由接合器220的上表面223中之環狀氣體通道242而與柄桿210的側壁211中之至少二氣體通道217呈流體連通，其中柄桿210的側壁211中之各氣體通道217係與各個平臺氣體通道280呈流體連通，以使當處理期間將半導體基板支撐在平臺的上表面上時，背面氣體能藉由背面氣體供應器而供應至半導體基板下方的區域。
在另一實施方式中，接合器200的至少一排氣口224可與（或可不與）柄桿210的各個至少一進氣口216其中之一或多者對齊。舉例而言，接合器220可包括其側壁221中的至少一氣體通道232，該至少一氣體通道232係經由接合器220的上表面223中之環狀氣體通道242而與柄桿210的側壁211中之至少一氣體通道217呈流體連通，其中接合器220的側壁221中之至少一氣體通道232之至少一各別排氣口224係與柄桿210的側壁211中之至少一氣體通道217之至少一各別進氣口216對齊。或者，接合器220可包括其側壁221中的至少一氣體通道232，該至少一氣體通道232係經由接合器220的上表面223中之環狀氣體通道242而與柄桿210的側壁211中之至少一氣體通道217呈流體連通，其中接合器220的側壁221中之至少一氣體通道232之至少一各別排氣口224係不與柄桿210的側壁211中之至少一氣體通道217之至少一各別進氣口216對齊。
雖然已參考具體實施方式來詳細敘述包括等溫沉積腔室之電漿處理設備，但在不偏離隨附申請專利範圍的情況下，對於本領域中具有通常知識者而言，可實施各種變化和修改、以及採用各種等效方式是顯而易見的。
162‧‧‧控制器
205‧‧‧平臺
206‧‧‧上表面
206a‧‧‧臺面圖案
209‧‧‧靜電夾持電極
209a‧‧‧單電極
210‧‧‧柄桿
211‧‧‧側壁
213‧‧‧下表面
214‧‧‧上端
215‧‧‧圓柱狀內部區域
216‧‧‧進氣口
217‧‧‧氣體通道
220‧‧‧接合器
221‧‧‧側壁
223‧‧‧上表面
224‧‧‧排氣口
225‧‧‧圓柱狀內部區域
226‧‧‧內溝槽
227‧‧‧外溝槽
230‧‧‧內側O形環
231‧‧‧外側O形環
232‧‧‧氣體通道
233‧‧‧下部內凸緣
234‧‧‧下部外凸緣
242‧‧‧環狀氣體通道
250‧‧‧內溝槽
251‧‧‧外溝槽
252‧‧‧環狀氣體通道
260‧‧‧加熱器
265‧‧‧下部RF電極
280‧‧‧平臺氣體通道
300‧‧‧半導體基板電漿處理設備
302‧‧‧高頻RF產生器
304‧‧‧低頻RF產生器
306‧‧‧匹配網路
308‧‧‧加熱歧管
310‧‧‧氣體線路
312‧‧‧入口
314‧‧‧噴淋頭模組
316‧‧‧半導體基板
320‧‧‧基板底座模組
324‧‧‧真空腔室
341‧‧‧背面氣體供應器
362‧‧‧處理氣體源
圖1係一示意圖，其顯示依據於此所揭露之實施方式之化學沉積設備的概要。
圖2顯示根據如於此所揭露之實施方式之基板底座模組的橫剖面。
圖3顯示根據如於此所揭露之實施方式之基板底座模組的橫剖面。
圖4顯示根據如於此所揭露之實施方式之基板底座模組的橫剖面。
圖5顯示根據如於此所揭露之實施方式之基板底座模組的橫剖面。
圖6顯示根據如於此所揭露之實施方式之基板底座模組的橫剖面。
圖7顯示根據如於此所揭露之實施方式之基板底座模組的橫剖面。
205‧‧‧平臺
206‧‧‧上表面
206a‧‧‧臺面圖案
209‧‧‧靜電夾持電極
210‧‧‧柄桿
211‧‧‧側壁
213‧‧‧下表面
214‧‧‧上端
215‧‧‧圓柱狀內部區域
216‧‧‧進氣口
217‧‧‧氣體通道
220‧‧‧接合器
221‧‧‧側壁
223‧‧‧上表面
224‧‧‧排氣口
225‧‧‧圓柱狀內部區域
226‧‧‧內溝槽
227‧‧‧外溝槽
230‧‧‧內側O形環
231‧‧‧外側O形環
232‧‧‧氣體通道
233‧‧‧下部內凸緣
234‧‧‧下部外凸緣
242‧‧‧環狀氣體通道
260‧‧‧加熱器
265‧‧‧下部RF電極
280‧‧‧平臺氣體通道
320‧‧‧基板底座模組

Claims (20)

  1. 一種用以處理半導體基板的半導體基板處理設備，該半導體基板處理設備包括一高溫基板底座模組，該高溫基板底座模組之一柄桿的一下表面與一接合器的一上表面之間具有一最小化裝設面積，該接合器支撐該柄桿，該半導體基板處理設備包含： 一真空腔室，包括一處理區域，可在該處理區域中處理半導體基板； 一噴淋頭模組，來自處理氣體源之處理氣體係經由該噴淋頭模組而供應至該真空腔室的該處理區域；以及 該基板底座模組，包括一平臺，該平臺具有一上表面，該上表面係用以在處理期間將半導體基板支撐於其上，由陶瓷材料製成之該柄桿具有定義一圓柱狀內部區域之一側壁、一下表面、及支撐該平臺之一上端，且該接合器具有定義一圓柱狀內部區域之一側壁及接附至該柄桿的該下表面之一上表面，該柄桿的該下表面包括至少一進氣口，該至少一進氣口係與設置在該柄桿的該側壁中之一各別氣體通道呈流體連通，該至少一進氣口係與設置在該接合器的該上表面中之一環狀氣體通道內的至少一排氣口呈流體連通，該接合器的該上表面包括一內溝槽及一外溝槽，該內溝槽係設置在該至少一排氣口的徑向內側，且該外溝槽係設置在該內溝槽的徑向外側，該內溝槽之中具有一內側O形環以使處理期間於該接合器的該圓柱狀內部區域與該至少一排氣口之間形成一內部真空密封，且該外溝槽之中具有一外側O形環以使處理期間於圍繞該接合器的該側壁之一區域與該至少一排氣口之間形成一外部真空密封； 其中該平臺包括至少一平臺氣體通道，該至少一平臺氣體通道係與該柄桿的該側壁中之一各別氣體通道呈流體連通，當處理期間將半導體基板支撐在該平臺的該上表面時，背面氣體可經由該至少一平臺氣體通道而供應至該半導體基板下方的區域。
  2. 如申請專利範圍第1項之用以處理半導體基板的半導體基板處理設備，其中該接合器的該上表面中之該環狀氣體通道係形成在該接合器的該外溝槽的徑向內側部份中，且該外側O形環係設置在該外溝槽的徑向外側部份中。
  3. 如申請專利範圍第1項之用以處理半導體基板的半導體基板處理設備，其中： （a）該柄桿的該下表面包括一環狀氣體通道，該環狀氣體通道係與該接合器的該上表面中之該環狀氣體通道相鄰，其中該柄桿的該至少一進氣口係與該接合器的該上表面中之該環狀氣體通道及該柄桿的該下表面中之該環狀氣體通道呈流體連通； （b）該柄桿的該下表面包括與該接合器的該內溝槽相鄰之一內溝槽，其中該內側O形環的一部份係位於該柄桿的該內溝槽中，且該柄桿的該下表面包括與該接合器的該外溝槽相鄰之一外溝槽，其中該外側O形環的一部份係位於該柄桿的該外溝槽中； （c）該柄桿的該下表面包括與該接合器的該內溝槽相鄰之一內溝槽，其中該內側O形環的一部份係位於該柄桿的該內溝槽中，且該柄桿的該下表面包括與該接合器的該外溝槽相鄰之一外溝槽，其中該外側O形環的一部份係位於該柄桿的該外溝槽中，該柄桿的該下表面更包括與該接合器的該上表面中之該環狀氣體通道相鄰之一環狀氣體通道，其中該柄桿的該至少一進氣口係位於該柄桿的該環狀氣體通道中，且該柄桿的該環狀氣體通道係與該接合器的該環狀氣體通道呈流體連通；或 （d）該柄桿的該下表面包括與該接合器的該內溝槽相鄰之一內溝槽，其中該內側O形環的一部份係位於該柄桿的該內溝槽中，且該柄桿的該下表面包括與該接合器的該外溝槽相鄰之一外溝槽，其中該外側O形環的一部份係位於該柄桿的該外溝槽中，該柄桿的該至少一進氣口係設置在該柄桿的該外溝槽的徑向內側部份中，其中該柄桿的該外溝槽的該徑向內側部份形成一環狀氣體通道，該環狀氣體通道係與該接合器的該環狀氣體通道呈流體連通，且該外側O形環係位於該柄桿的該外溝槽的徑向外側部份中。
  4. 如申請專利範圍第1項之用以處理半導體基板的半導體基板處理設備，其中該半導體基板處理設備包括： （a）一RF能量源，用以在該處理區域中將該處理氣體激發成為電漿狀態； （b）一控制系統，配置以控制由該半導體基板處理設備所執行之製程；及/或 （c）一非暫態電腦機器可讀媒體，包含用以控制該半導體基板處理設備的程式指令。
  5. 如申請專利範圍第1項之用以處理半導體基板的半導體基板處理設備，其中： （a）該柄桿包括一下部內凸緣，該下部內凸緣自該柄桿的該側壁向內延伸，以使該下部內凸緣上方之該柄桿的該側壁之厚度在處理期間於該平臺與該柄桿的該下表面之間形成一熱阻；及/或 （b）該柄桿包括一下部外凸緣，該下部外凸緣自該柄桿的該側壁向外延伸，以使該下部外凸緣上方之該柄桿的該側壁之厚度在處理期間於該平臺與該柄桿的該下表面之間形成一熱阻。
  6. 如申請專利範圍第1項之用以處理半導體基板的半導體基板處理設備，其中： （a）該柄桿的該側壁之厚度小於該接合器的該側壁之厚度，以使該柄桿的該側壁在處理期間於該平臺與該柄桿的該下表面之間形成一熱阻； （b）位於該柄桿之一下部凸緣上方之該柄桿的該側壁之厚度約為3 mm或更小、或約為2 mm或更小； （c）該接合器係由鋁或鋁合金所製成；及/或 （d）該平臺的曝露表面係由陶瓷材料所製成。
  7. 如申請專利範圍第1項之用以處理半導體基板的半導體基板處理設備，其中該高溫基板底座模組更包含： （a）至少一靜電夾持電極，嵌入該平臺之中； （b）一底部RF電極，嵌入該平臺之中； （c）一加熱器，嵌入該平臺之中； （d）一承載環，配置以使半導體基板下降至該平臺的該上表面、及使半導體基板自該平臺的該上表面抬升； （e）複數升降銷，配置以使半導體基板下降至該平臺的該上表面、及使半導體基板自該平臺的該上表面抬升；或 （f）嵌入於其中之一單電極，該單電極係可操作為靜電夾持電極及RF電極。
  8. 如申請專利範圍第1項之用以處理半導體基板的半導體基板處理設備，其中： （a）該接合器包括其該側壁中之一氣體通道，該氣體通道係經由該接合器的該上表面中之該環狀氣體通道而與該柄桿的該側壁中之至少二氣體通道呈流體連通，其中該柄桿的該側壁中之各氣體通道係與一各別平臺氣體通道呈流體連通，以使當處理期間將半導體基板支撐在該平臺的該上表面上時，背面氣體可供應至該半導體基板下方的區域；及/或 （b）該接合器包括其該側壁中之至少一氣體通道，該至少一氣體通道係經由該接合器的該上表面中之該環狀氣體通道而與該柄桿的該側壁中之至少一氣體通道呈流體連通，其中該接合器的該側壁中之該至少一氣體通道的至少一各別排氣口係與該柄桿的該側壁中之該至少一氣體通道的至少一各別進氣口對齊，或該接合器的該各別排氣口係不與該柄桿的該各別進氣口對齊。
  9. 如申請專利範圍第1項之用以處理半導體基板的半導體基板處理設備，更包含一背面氣體供應器，該背面氣體供應器係可操作以供應背面熱能傳遞或清理氣體至設置於該接合器的該側壁中之至少一氣體通道，以使當處理期間將半導體基板支撐在該平臺的該上表面上時，背面熱能傳遞或清理氣體可經由該柄桿的該側壁而供應至該半導體基板下方的該區域。
  10. 一種半導體基板處理設備的高溫基板底座模組，該高溫基板底座模組包含： 一平臺，具有一上表面，該上表面係配置以在處理期間將半導體基板支撐於其上； 一柄桿，具有定義一圓柱狀內部區域之一側壁、一下表面、及支撐該平臺之一上端，其中該柄桿的該下表面係配置成接附至一接合器的一上表面；  該柄桿的該下表面包括一環狀氣體通道，該環狀氣體通道之中包括至少一進氣口，其中該至少一進氣口係與設置在該柄桿的該側壁中之一各別氣體通道呈流體連通，且該柄桿的該下表面中之該至少一進氣口係配置成當該柄桿接附至接合器時，該柄桿的該下表面中之該至少一進氣口與接合器的上表面中之至少一排氣口呈流體連通； 其中該平臺包括至少一平臺氣體通道，該至少一平臺氣體通道係與該柄桿的該側壁中之一各別氣體通道呈流體連通，當處理期間將半導體基板支撐在該平臺的該上表面上時，背面氣體可經由該至少一平臺氣體通道而供應至該半導體基板下方的區域。
  11. 如申請專利範圍第10項之半導體基板處理設備的高溫基板底座模組，更包含： （a）一接合器，其中該柄桿的該下表面係接附至該接合器的一上表面，該接合器的該上表面包括一環狀氣體通道，該環狀氣體通道之中具有至少一排氣口，該至少一排氣口係與該柄桿的該至少一進氣口呈流體連通；一內溝槽，該內溝槽位於該至少一排氣口的徑向內側，其中一內側O形環係位於該內溝槽中，以在處理期間於該柄桿的該圓柱狀內部區域與該柄桿的該下表面中之該至少一進氣口之間形成一內部真空密封；及一外溝槽，該外溝槽位於該內溝槽的徑向外側，其中一外側O形環係位於該外溝槽中，以在處理期間於圍繞該柄桿的該側壁之一區域與該柄桿的該下表面中之該至少一進氣口之間形成一外部真空密封； （b）一接合器，其中該柄桿的該下表面係接附至該接合器的一上表面，該接合器的該上表面之中具有至少一排氣口，該至少一排氣口係與該柄桿的該至少一進氣口呈流體連通；一內溝槽，該內溝槽位於該至少一排氣口的徑向內側，其中一內側O形環係位於該內溝槽中，以在處理期間於該柄桿的該圓柱狀內部區域與該柄桿的該至少一進氣口之間形成一內部真空密封；及一外溝槽，該外溝槽位於該內溝槽的徑向外側，其中一外側O形環係位於該外溝槽中，以在處理期間於圍繞該柄桿的該側壁之一區域與該柄桿的該至少一進氣口之間形成一外部真空密封； （c）一接合器，其中該柄桿的該下表面係接附至該接合器的一上表面，該接合器的該上表面包括一環狀氣體通道，該環狀氣體通道之中具有至少一排氣口，該至少一排氣口係與該柄桿的該至少一進氣口呈流體連通；一內溝槽，該內溝槽位於該至少一排氣口的徑向內側，其中一內側O形環係位於該內溝槽中，以在處理期間於該柄桿的該圓柱狀內部區域與該柄桿的該下表面中之該至少一進氣口之間形成一內部真空密封；及一外溝槽，該外溝槽位於該內溝槽的徑向外側，其中一外側O形環係位於該外溝槽中，以在處理期間於圍繞該柄桿的該側壁之一區域與該柄桿的該下表面中之該至少一進氣口之間形成一外部真空密封，其中該柄桿的該下表面包括一內溝槽及一外溝槽，該內溝槽與該接合器的該內溝槽相鄰且該外溝槽與該接合器的該外溝槽相鄰，該柄桿的該內溝槽之中包括該內側O形環的一部份且該柄桿的該外溝槽之中包括該外側O形環的一部份；或 （d）一接合器，其中該柄桿的該下表面係接附至該接合器的一上表面，該接合器的該上表面之中包括至少一排氣口，該至少一排氣口係與該柄桿的該至少一進氣口呈流體連通；一內溝槽，該內溝槽位於該至少一排氣口的徑向內側，其中一內側O形環係位於該內溝槽中，以在處理期間於該柄桿的該圓柱狀內部區域與該柄桿的該下表面中之該至少一進氣口之間形成一內部真空密封；及一外溝槽，該外溝槽位於該內溝槽的徑向外側，其中一外側O形環係位於該外溝槽中，以在處理期間於圍繞該柄桿的該側壁之一區域與該柄桿的該下表面中之該至少一進氣口之間形成一外部真空密封，其中該柄桿的該下表面包括一內溝槽及一外溝槽，該內溝槽與該接合器的該內溝槽相鄰且該外溝槽與該接合器的該外溝槽相鄰，該柄桿的該內溝槽之中包括該內側O形環的一部份且該柄桿的該外溝槽之中包括該外側O形環的一部份。
  12. 如申請專利範圍第10項之半導體基板處理設備的高溫基板底座模組，其中： （a）該柄桿的該下表面包括一內溝槽及一外溝槽，該內溝槽位於該至少一進氣口的徑向內側，該內溝槽係配置成當該柄桿的該下表面接附至該接合器的該上表面時，該內溝槽之中包括一內側O形環，以在處理期間於該柄桿的該圓柱狀內部區域與該至少一進氣口之間形成一內部真空密封，且該外溝槽位於該至少一進氣口的徑向外側，該外溝槽係配置成當該柄桿的該下表面接附至該接合器的該上表面時，該外溝槽之中包括一外側O形環，以在處理期間於圍繞該柄桿的該側壁之一區域與該至少一進氣口之間形成一外部真空密封；或 （b）該柄桿的該下表面包括一內溝槽及一外溝槽，該內溝槽位於該至少一進氣口的徑向內側，該內溝槽係配置成當該柄桿的該下表面接附至該接合器的該上表面時，該內溝槽之中包括一內側O形環，以在處理期間於該柄桿的該圓柱狀內部區域與該至少一進氣口之間形成一內部真空密封，且該外溝槽位於該至少一進氣口的徑向外側，該外溝槽係配置成當該柄桿的該下表面接附至該接合器的該上表面時，該外溝槽之中包括一外側O形環，以在處理期間於圍繞該柄桿的該側壁之一區域與該至少一進氣口之間形成一外部真空密封，其中該柄桿的該環狀氣體通道係形成在該柄桿的該外溝槽的徑向內側部份中，且該外側O形環係配置成當該柄桿接附至該接合器時，該外側O形環位於該外溝槽的徑向外側部份中。
  13. 如申請專利範圍第10項之半導體基板處理設備的高溫基板底座模組，其中： （a）該柄桿包括一下部內凸緣，該下部內凸緣自該柄桿的該側壁向內延伸，以使該下部內凸緣上方之該柄桿的該側壁之厚度在處理期間於該平臺與該柄桿的該下表面之間形成一熱阻；及/或 （b）該柄桿包括一下部外凸緣，該下部外凸緣自該柄桿的該側壁向外延伸，以使該下部外凸緣上方之該凸緣的該側壁之厚度在處理期間於該平臺與該柄桿的該下表面之間形成一熱阻。
  14. 如申請專利範圍第10項之半導體基板處理設備的高溫基板底座模組，其中： （a）該柄桿的該側壁之厚度係配置成小於該柄桿可接附之該接合器的該側壁之厚度，以使該柄桿的該側壁在處理期間於該平臺與該柄桿的該下表面之間形成一熱阻； （b）位於該柄桿的一下部凸緣上方之該柄桿的該側壁之厚度約為3 mm或更小、或約為2 mm或更小；及/或 （c）該平臺的曝露表面係由陶瓷材料所製成。
  15. 如申請專利範圍第10項之半導體基板處理設備的高溫基板底座模組，其中該高溫基板底座模組更包含： （a）至少一靜電夾持電極，嵌入該平臺之中； （b）一底部RF電極，嵌入該平臺之中； （c）一加熱器，嵌入該平臺之中； （d）一承載環，配置以使半導體基板下降至該平臺的該上表面、及使半導體基板自該平臺的該上表面抬升； （e）複數升降銷，配置以使半導體基板下降至該平臺的該上表面、及使半導體基板自該平臺的該上表面抬升；或 （f）嵌入於其中之一單電極，該單電極係可操作為靜電夾持電極及RF電極。
  16. 一種半導體基板處理設備之高溫基板底座模組的接合器，該接合器係配置以支撐該半導體基板處理設備之真空腔室中之該基板底座模組的一柄桿，該接合器包含： 一側壁及一上表面，該接合器的該側壁定義該接合器的一圓柱狀內部區域，且該接合器的該上表面係配置以接附至一柄桿的一下表面，該接合器的該上表面包括一環狀氣體通道，該環狀氣體通道包括至少一排氣口，該至少一排氣口係與設置在該接合器的該側壁中之一各別氣體通道呈流體連通，該至少一排氣口係配置成當該接合器的該上表面接附至該柄桿的下表面時，該至少一排氣口與柄桿的下表面中之至少一進氣口呈流體連通，該接合器的該上表面包括一內溝槽及一外溝槽，該內溝槽位於該至少一排氣口的徑向內側且該外溝槽位於該內溝槽的徑向外側，該內溝槽係配置成當該接合器接附至該柄桿時，該內溝槽之中包括一內側O形環，以使處理期間於該接合器的該圓柱狀內部區域與該至少一排氣口之間形成一內部真空密封，且該外溝槽係配置成當該接合器接附至該柄桿時，該外溝槽之中包括一外側O形環，以使處理期間於圍繞該接合器的該側壁之一區域與該至少一排氣口之間形成一外部真空密封。
  17. 如申請專利範圍第16項之半導體基板處理設備之高溫基板底座模組的接合器，其中該接合器的該上表面中之該環狀氣體通道係形成在該接合器的該外溝槽的徑向內側部份中，且該外側O形環係設置在該外溝槽的徑向外側部份中。
  18. 一種在如申請專利範圍第1項之半導體基板處理設備中處理半導體基板的方法，該方法包含： 供應步驟，自該處理氣體源供應該處理氣體進入該處理區域內；及 處理步驟，處理支撐在該平臺的該上表面上之一半導體基板，該處理步驟包含經由該至少一平臺氣體通道供應背面熱能傳遞氣體或清理氣體，該至少一平臺氣體通道係經由該柄桿的該至少一氣體通道而與該接合器的至少一氣體通道呈流體連通，其中該背面氣體係供應至處理中之該半導體基板下方的一區域。
  19. 如申請專利範圍第18項之在如申請專利範圍第1項之半導體基板處理設備中處理半導體基板的方法，其中該平臺的該上表面之溫度至少約為600℃，且該柄桿與該接合器之間的介面之溫度約為300℃以下。
  20. 如申請專利範圍第18項之在如申請專利範圍第1項之半導體基板處理設備中處理半導體基板的方法，其中該處理步驟係下列其中至少一者：化學氣相沉積、電漿輔助化學氣相沉積、原子層沉積、電漿輔助原子層沉積、脈衝式沉積層、及/或電漿輔助脈衝式沉積層。
TW105114246A 2015-05-12 2016-05-09 高溫基板底座模組及其元件 TWI708315B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/710,151 US10177024B2 (en) 2015-05-12 2015-05-12 High temperature substrate pedestal module and components thereof
US14/710,151 2015-05-12

Publications (2)

Publication Number Publication Date
TW201709404A true TW201709404A (zh) 2017-03-01
TWI708315B TWI708315B (zh) 2020-10-21

Family

ID=57277769

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105114246A TWI708315B (zh) 2015-05-12 2016-05-09 高溫基板底座模組及其元件

Country Status (5)

Country Link
US (1) US10177024B2 (zh)
JP (2) JP6904665B2 (zh)
KR (2) KR102653444B1 (zh)
CN (2) CN112251734B (zh)
TW (1) TWI708315B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210043483A1 (en) * 2018-01-31 2021-02-11 Shanghai Ic R&D Center Co., Ltd. Apparatus and method for improving film thickness uniformity
TWI795030B (zh) * 2020-10-15 2023-03-01 美商應用材料股份有限公司 用於減少斜面沉積的基板支撐組件及方法

Families Citing this family (246)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US9738975B2 (en) 2015-05-12 2017-08-22 Lam Research Corporation Substrate pedestal module including backside gas delivery tube and method of making
US10177024B2 (en) * 2015-05-12 2019-01-08 Lam Research Corporation High temperature substrate pedestal module and components thereof
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10190213B2 (en) 2016-04-21 2019-01-29 Asm Ip Holding B.V. Deposition of metal borides
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
KR102532607B1 (ko) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. 기판 가공 장치 및 그 동작 방법
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
KR20180068582A (ko) 2016-12-14 2018-06-22 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
KR20180070971A (ko) 2016-12-19 2018-06-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
KR102457289B1 (ko) 2017-04-25 2022-10-21 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10147610B1 (en) 2017-05-30 2018-12-04 Lam Research Corporation Substrate pedestal module including metallized ceramic tubes for RF and gas delivery
US11289355B2 (en) * 2017-06-02 2022-03-29 Lam Research Corporation Electrostatic chuck for use in semiconductor processing
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
KR102491945B1 (ko) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
KR102401446B1 (ko) 2017-08-31 2022-05-24 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11469084B2 (en) * 2017-09-05 2022-10-11 Lam Research Corporation High temperature RF connection with integral thermal choke
KR102630301B1 (ko) 2017-09-21 2024-01-29 에이에스엠 아이피 홀딩 비.브이. 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
WO2019088203A1 (ja) * 2017-11-02 2019-05-09 日本碍子株式会社 半導体製造装置用部材、その製法及び成形型
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
KR102300756B1 (ko) * 2017-11-21 2021-09-10 와틀로 일렉트릭 매뉴팩츄어링 컴파니 원자 보호층을 갖는 세라믹 받침대
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
TWI791689B (zh) 2017-11-27 2023-02-11 荷蘭商Ａｓｍ智慧財產控股私人有限公司 包括潔淨迷你環境之裝置
WO2019103613A1 (en) 2017-11-27 2019-05-31 Asm Ip Holding B.V. A storage device for storing wafer cassettes for use with a batch furnace
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
US11482412B2 (en) 2018-01-19 2022-10-25 Asm Ip Holding B.V. Method for depositing a gap-fill layer by plasma-assisted deposition
TWI799494B (zh) 2018-01-19 2023-04-21 荷蘭商Ａｓｍ 智慧財產控股公司 沈積方法
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
KR102655866B1 (ko) 2018-01-31 2024-04-05 램 리써치 코포레이션 정전 척 (electrostatic chuck, ESC) 페데스탈 전압 분리
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
CN111699278B (zh) 2018-02-14 2023-05-16 Asm Ip私人控股有限公司 通过循环沉积工艺在衬底上沉积含钌膜的方法
KR102636427B1 (ko) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
US11086233B2 (en) 2018-03-20 2021-08-10 Lam Research Corporation Protective coating for electrostatic chucks
KR102646467B1 (ko) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102501472B1 (ko) 2018-03-30 2023-02-20 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
KR20190128558A (ko) 2018-05-08 2019-11-18 에이에스엠 아이피 홀딩 비.브이. 기판 상에 산화물 막을 주기적 증착 공정에 의해 증착하기 위한 방법 및 관련 소자 구조
TW202349473A (zh) 2018-05-11 2023-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於基板上形成摻雜金屬碳化物薄膜之方法及相關半導體元件結構
KR102596988B1 (ko) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11270899B2 (en) 2018-06-04 2022-03-08 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
KR102568797B1 (ko) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 시스템
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
KR20210027265A (ko) 2018-06-27 2021-03-10 에이에스엠 아이피 홀딩 비.브이. 금속 함유 재료를 형성하기 위한 주기적 증착 방법 및 금속 함유 재료를 포함하는 막 및 구조체
WO2020002995A1 (en) 2018-06-27 2020-01-02 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
KR20200002519A (ko) 2018-06-29 2020-01-08 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
DE102018215284B4 (de) * 2018-09-07 2022-11-10 centrotherm international AG Rohrverschluss für ein Prozessrohr und Prozesseinheit
KR20200030162A (ko) 2018-09-11 2020-03-20 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
US11024523B2 (en) * 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
CN110970344A (zh) 2018-10-01 2020-04-07 Asm Ip控股有限公司 衬底保持设备、包含所述设备的系统及其使用方法
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (ko) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
KR102546322B1 (ko) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
KR102605121B1 (ko) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR20200051105A (ko) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (ko) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP2020096183A (ja) 2018-12-14 2020-06-18 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム
TW202405220A (zh) 2019-01-17 2024-02-01 荷蘭商Ａｓｍ Ｉｐ 私人控股有限公司 藉由循環沈積製程於基板上形成含過渡金屬膜之方法
KR20200091543A (ko) 2019-01-22 2020-07-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
CN111524788B (zh) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 氧化硅的拓扑选择性膜形成的方法
KR102626263B1 (ko) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치
KR102638425B1 (ko) 2019-02-20 2024-02-21 에이에스엠 아이피 홀딩 비.브이. 기판 표면 내에 형성된 오목부를 충진하기 위한 방법 및 장치
JP2020136677A (ja) 2019-02-20 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー 基材表面内に形成された凹部を充填するための周期的堆積方法および装置
KR20200102357A (ko) 2019-02-20 2020-08-31 에이에스엠 아이피 홀딩 비.브이. 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법
JP2020133004A (ja) 2019-02-22 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー 基材を処理するための基材処理装置および方法
KR20200108248A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOCN 층을 포함한 구조체 및 이의 형성 방법
KR20200108243A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOC 층을 포함한 구조체 및 이의 형성 방법
KR20200108242A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
JP2020167398A (ja) 2019-03-28 2020-10-08 エーエスエム・アイピー・ホールディング・ベー・フェー ドアオープナーおよびドアオープナーが提供される基材処理装置
KR20200116855A (ko) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. 반도체 소자를 제조하는 방법
US11447864B2 (en) 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
KR20200125453A (ko) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. 기상 반응기 시스템 및 이를 사용하는 방법
KR20200130118A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 비정질 탄소 중합체 막을 개질하는 방법
KR20200130121A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 딥 튜브가 있는 화학물질 공급원 용기
KR20200130652A (ko) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
JP2020188254A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
JP2020188255A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141002A (ko) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법
KR20200143254A (ko) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR20210005515A (ko) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
JP2021015791A (ja) 2019-07-09 2021-02-12 エーエスエム アイピー ホールディング ビー．ブイ． 同軸導波管を用いたプラズマ装置、基板処理方法
CN112216646A (zh) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 基板支撑组件及包括其的基板处理装置
KR20210010307A (ko) 2019-07-16 2021-01-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210010820A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 실리콘 게르마늄 구조를 형성하는 방법
KR20210010816A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 라디칼 보조 점화 플라즈마 시스템 및 방법
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
JP2021019198A (ja) 2019-07-19 2021-02-15 エーエスエム・アイピー・ホールディング・ベー・フェー トポロジー制御されたアモルファスカーボンポリマー膜の形成方法
TW202113936A (zh) 2019-07-29 2021-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於利用n型摻雜物及/或替代摻雜物選擇性沉積以達成高摻雜物併入之方法
CN112309899A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
CN112309900A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
KR20210018759A (ko) 2019-08-05 2021-02-18 에이에스엠 아이피 홀딩 비.브이. 화학물질 공급원 용기를 위한 액체 레벨 센서
KR102494377B1 (ko) 2019-08-12 2023-02-07 커트 제이. 레스커 컴파니 원자 스케일 처리를 위한 초고순도 조건
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
JP2021031769A (ja) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー．ブイ． 成膜原料混合ガス生成装置及び成膜装置
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
KR20210024423A (ko) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 홀을 구비한 구조체를 형성하기 위한 방법
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210024420A (ko) 2019-08-23 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법
KR20210029090A (ko) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. 희생 캡핑 층을 이용한 선택적 증착 방법
KR20210029663A (ko) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (zh) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
TW202129060A (zh) 2019-10-08 2021-08-01 荷蘭商Ａｓｍ Ｉｐ控股公司 基板處理裝置、及基板處理方法
TW202115273A (zh) 2019-10-10 2021-04-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成光阻底層之方法及包括光阻底層之結構
KR20210045930A (ko) 2019-10-16 2021-04-27 에이에스엠 아이피 홀딩 비.브이. 실리콘 산화물의 토폴로지-선택적 막의 형성 방법
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (ko) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. 막을 선택적으로 에칭하기 위한 장치 및 방법
KR20210050453A (ko) 2019-10-25 2021-05-07 에이에스엠 아이피 홀딩 비.브이. 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR20210054983A (ko) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR20210062561A (ko) 2019-11-20 2021-05-31 에이에스엠 아이피 홀딩 비.브이. 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
CN112951697A (zh) 2019-11-26 2021-06-11 Asm Ip私人控股有限公司 基板处理设备
KR20210065848A (ko) 2019-11-26 2021-06-04 에이에스엠 아이피 홀딩 비.브이. 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법
CN112885693A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
CN112885692A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
JP2021090042A (ja) 2019-12-02 2021-06-10 エーエスエム アイピー ホールディング ビー．ブイ． 基板処理装置、基板処理方法
KR20210070898A (ko) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
TW202125596A (zh) 2019-12-17 2021-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成氮化釩層之方法以及包括該氮化釩層之結構
KR20210080214A (ko) 2019-12-19 2021-06-30 에이에스엠 아이피 홀딩 비.브이. 기판 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
TW202140135A (zh) 2020-01-06 2021-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氣體供應總成以及閥板總成
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
KR20210095050A (ko) 2020-01-20 2021-07-30 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법 및 박막 표면 개질 방법
TW202130846A (zh) 2020-02-03 2021-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成包括釩或銦層的結構之方法
KR20210100010A (ko) 2020-02-04 2021-08-13 에이에스엠 아이피 홀딩 비.브이. 대형 물품의 투과율 측정을 위한 방법 및 장치
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
TW202146715A (zh) 2020-02-17 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於生長磷摻雜矽層之方法及其系統
TW202203344A (zh) 2020-02-28 2022-01-16 荷蘭商Ａｓｍ Ｉｐ控股公司 專用於零件清潔的系統
KR20210116240A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 조절성 접합부를 갖는 기판 핸들링 장치
KR20210116249A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 록아웃 태그아웃 어셈블리 및 시스템 그리고 이의 사용 방법
KR20210117157A (ko) 2020-03-12 2021-09-28 에이에스엠 아이피 홀딩 비.브이. 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법
KR20210124042A (ko) 2020-04-02 2021-10-14 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법
TW202146689A (zh) 2020-04-03 2021-12-16 荷蘭商Ａｓｍ Ｉｐ控股公司 阻障層形成方法及半導體裝置的製造方法
TW202145344A (zh) 2020-04-08 2021-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
KR20210132600A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
TW202146831A (zh) 2020-04-24 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法
CN113555279A (zh) 2020-04-24 2021-10-26 Asm Ip私人控股有限公司 形成含氮化钒的层的方法及包含其的结构
KR20210134226A (ko) 2020-04-29 2021-11-09 에이에스엠 아이피 홀딩 비.브이. 고체 소스 전구체 용기
KR20210134869A (ko) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Foup 핸들러를 이용한 foup의 빠른 교환
KR20210141379A (ko) 2020-05-13 2021-11-23 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 레이저 정렬 고정구
TW202147383A (zh) 2020-05-19 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材處理設備
KR20210145078A (ko) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법
KR20210145080A (ko) 2020-05-22 2021-12-01 에이에스엠 아이피 홀딩 비.브이. 과산화수소를 사용하여 박막을 증착하기 위한 장치
TW202201602A (zh) 2020-05-29 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TW202218133A (zh) 2020-06-24 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成含矽層之方法
TW202217953A (zh) 2020-06-30 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
US11699602B2 (en) * 2020-07-07 2023-07-11 Applied Materials, Inc. Substrate support assemblies and components
TW202219628A (zh) 2020-07-17 2022-05-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於光微影之結構與方法
TW202204662A (zh) 2020-07-20 2022-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於沉積鉬層之方法及系統
TW202212623A (zh) 2020-08-26 2022-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成金屬氧化矽層及金屬氮氧化矽層的方法、半導體結構、及系統
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
TW202229613A (zh) 2020-10-14 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 於階梯式結構上沉積材料的方法
KR20220053482A (ko) 2020-10-22 2022-04-29 에이에스엠 아이피 홀딩 비.브이. 바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리
TW202223136A (zh) 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於在基板上形成層之方法、及半導體處理系統
TW202235675A (zh) 2020-11-30 2022-09-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 注入器、及基板處理設備
CN114639631A (zh) 2020-12-16 2022-06-17 Asm Ip私人控股有限公司 跳动和摆动测量固定装置
TW202231903A (zh) 2020-12-22 2022-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成
CN112899659B (zh) * 2021-01-19 2022-06-14 中国科学院半导体研究所 用于等离子体化学气相的样品支架
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate

Family Cites Families (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07153706A (ja) 1993-05-27 1995-06-16 Applied Materials Inc サセプタ装置
DE69432383D1 (de) 1993-05-27 2003-05-08 Applied Materials Inc Verbesserungen betreffend Substrathalter geeignet für den Gebrauch in Vorrichtungen für die chemische Abscheidung aus der Dampfphase
US6544379B2 (en) * 1993-09-16 2003-04-08 Hitachi, Ltd. Method of holding substrate and substrate holding system
US5569356A (en) 1995-05-19 1996-10-29 Lam Research Corporation Electrode clamping assembly and method for assembly and use thereof
US6035101A (en) 1997-02-12 2000-03-07 Applied Materials, Inc. High temperature multi-layered alloy heater assembly and related methods
US6616767B2 (en) 1997-02-12 2003-09-09 Applied Materials, Inc. High temperature ceramic heater assembly with RF capability
WO1998039609A1 (en) * 1997-03-07 1998-09-11 Semitool, Inc. Semiconductor processing furnace
US6772827B2 (en) * 2000-01-20 2004-08-10 Applied Materials, Inc. Suspended gas distribution manifold for plasma chamber
US6494955B1 (en) * 2000-02-15 2002-12-17 Applied Materials, Inc. Ceramic substrate support
US6223447B1 (en) 2000-02-15 2001-05-01 Applied Materials, Inc. Fastening device for a purge ring
KR20010111058A (ko) * 2000-06-09 2001-12-15 조셉 제이. 스위니 전체 영역 온도 제어 정전기 척 및 그 제조방법
JP2002001100A (ja) * 2000-06-22 2002-01-08 Mitsubishi Heavy Ind Ltd プラズマ処理装置
US6860965B1 (en) 2000-06-23 2005-03-01 Novellus Systems, Inc. High throughput architecture for semiconductor processing
US6997993B2 (en) 2001-02-09 2006-02-14 Ngk Insulators, Ltd. Susceptor supporting construction
US6730175B2 (en) * 2002-01-22 2004-05-04 Applied Materials, Inc. Ceramic substrate support
JP3520074B2 (ja) 2002-03-28 2004-04-19 日本碍子株式会社 セラミックサセプターの取付構造、セラミックサセプターの支持構造およびセラミックサセプターの支持部材
US6962348B2 (en) 2002-07-29 2005-11-08 Tokyo Electron Limited Sealing apparatus having a single groove
JP4060684B2 (ja) * 2002-10-29 2008-03-12 日本発条株式会社 ステージ
US7126808B2 (en) 2003-04-01 2006-10-24 Varian Semiconductor Equipment Associates, Inc. Wafer platen equipped with electrostatic clamp, wafer backside gas cooling, and high voltage operation capability for plasma doping
US7645341B2 (en) 2003-12-23 2010-01-12 Lam Research Corporation Showerhead electrode assembly for plasma processing apparatuses
US7436645B2 (en) * 2004-10-07 2008-10-14 Applied Materials, Inc. Method and apparatus for controlling temperature of a substrate
JP4365766B2 (ja) * 2004-10-26 2009-11-18 京セラ株式会社 ウェハ支持部材とそれを用いた半導体製造装置
JP2007051317A (ja) 2005-08-16 2007-03-01 Ngk Insulators Ltd 加熱装置
US7869184B2 (en) 2005-11-30 2011-01-11 Lam Research Corporation Method of determining a target mesa configuration of an electrostatic chuck
US20070169703A1 (en) 2006-01-23 2007-07-26 Brent Elliot Advanced ceramic heater for substrate processing
US7737035B1 (en) 2006-03-31 2010-06-15 Novellus Systems, Inc. Dual seal deposition process chamber and process
JP4768699B2 (ja) * 2006-11-30 2011-09-07 キヤノンアネルバ株式会社 電力導入装置及び成膜方法
US8294069B2 (en) 2007-03-28 2012-10-23 Ngk Insulators, Ltd. Heating device for heating a wafer
JP5284153B2 (ja) * 2008-03-21 2013-09-11 日本碍子株式会社 セラミックスヒータ
JP2011525719A (ja) * 2008-06-24 2011-09-22 アプライド マテリアルズ インコーポレイテッド 低温ｐｅｃｖｄ用途用のペデスタルヒータ
US8753447B2 (en) 2009-06-10 2014-06-17 Novellus Systems, Inc. Heat shield for heater in semiconductor processing apparatus
JP5960384B2 (ja) 2009-10-26 2016-08-02 新光電気工業株式会社 静電チャック用基板及び静電チャック
JP5570359B2 (ja) * 2010-09-10 2014-08-13 キヤノンアネルバ株式会社 ロータリージョイント、及びスパッタリング装置
US8840754B2 (en) 2010-09-17 2014-09-23 Lam Research Corporation Polar regions for electrostatic de-chucking with lift pins
JP2012182221A (ja) 2011-02-28 2012-09-20 Taiheiyo Cement Corp 基板支持部材
US8801950B2 (en) 2011-03-07 2014-08-12 Novellus Systems, Inc. Reduction of a process volume of a processing chamber using a nested dynamic inert volume
US8371567B2 (en) 2011-04-13 2013-02-12 Novellus Systems, Inc. Pedestal covers
US10224182B2 (en) 2011-10-17 2019-03-05 Novellus Systems, Inc. Mechanical suppression of parasitic plasma in substrate processing chamber
US9388494B2 (en) * 2012-06-25 2016-07-12 Novellus Systems, Inc. Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region
US9088085B2 (en) 2012-09-21 2015-07-21 Novellus Systems, Inc. High temperature electrode connections
JP5583877B1 (ja) 2012-11-06 2014-09-03 日本碍子株式会社 サセプタ
CN103993293B (zh) * 2013-02-15 2018-06-26 诺发系统公司 带温度控制的多室喷头
US10125422B2 (en) 2013-03-27 2018-11-13 Applied Materials, Inc. High impedance RF filter for heater with impedance tuning device
US20150004798A1 (en) * 2013-06-28 2015-01-01 Lam Research Corporation Chemical deposition chamber having gas seal
US10808317B2 (en) 2013-07-03 2020-10-20 Lam Research Corporation Deposition apparatus including an isothermal processing zone
US20150083042A1 (en) 2013-09-26 2015-03-26 Applied Materials, Inc. Rotatable substrate support having radio frequency applicator
US10177024B2 (en) * 2015-05-12 2019-01-08 Lam Research Corporation High temperature substrate pedestal module and components thereof
US9738975B2 (en) * 2015-05-12 2017-08-22 Lam Research Corporation Substrate pedestal module including backside gas delivery tube and method of making

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210043483A1 (en) * 2018-01-31 2021-02-11 Shanghai Ic R&D Center Co., Ltd. Apparatus and method for improving film thickness uniformity
US11769679B2 (en) * 2018-01-31 2023-09-26 Shanghai Ic R&D Center Co., Ltd Apparatus and method for improving film thickness uniformity
TWI795030B (zh) * 2020-10-15 2023-03-01 美商應用材料股份有限公司 用於減少斜面沉積的基板支撐組件及方法

Also Published As

Publication number Publication date
US10177024B2 (en) 2019-01-08
TWI708315B (zh) 2020-10-21
JP7320563B2 (ja) 2023-08-03
JP6904665B2 (ja) 2021-07-21
KR102653444B1 (ko) 2024-03-29
KR20160133374A (ko) 2016-11-22
US20160336213A1 (en) 2016-11-17
CN112251734B (zh) 2023-03-28
CN106148916B (zh) 2020-09-25
CN112251734A (zh) 2021-01-22
KR20240045193A (ko) 2024-04-05
JP2021158379A (ja) 2021-10-07
JP2016213463A (ja) 2016-12-15
CN106148916A (zh) 2016-11-23

Similar Documents

Publication Publication Date Title
JP7320563B2 (ja) 高温基板台座モジュール及びその構成要素
JP7168642B2 (ja) 背面ガス供給管を備えた基板ペデスタルモジュールおよびその製造方法
JP5367068B2 (ja) 半導体ウェハのエッチング装置
US10253412B2 (en) Deposition apparatus including edge plenum showerhead assembly
KR20210072745A (ko) 등온 처리 존을 포함하는 증착 장치
TWI646614B (zh) Heater power supply mechanism
JP6268095B2 (ja) 半導体処理におけるエッジリングの熱管理
JP2016213456A5 (zh)
JP2015010281A (ja) ガスシールを有する化学蒸着チャンバ
TW201438139A (zh) 載置台及電漿處理裝置
TW201414870A (zh) 用於半導體材料處理設備之具有低微塵粒特性的噴淋頭電極與噴淋頭電極組件
TWI801413B (zh) 具有加熱的噴淋頭組件之基板處理腔室
KR20170009756A (ko) 원자층 증착 동안 화학물질들의 제어된 분리 및 전달을 통해 저 디펙트 프로세싱을 가능하게 하는 시스템들 및 방법들
TW202405232A (zh) 具有氣封之化學沉積腔室