TW201703056A - 可燒結膜及膠及其應用方法 - Google Patents
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Abstract
本文中提供作為在晶粒半導體封裝中使用的具有有利性質的導電晶粒附接材料之可燒結膜及膠。亦提供適用於製備此類膜及膠之調配物,以及製造此類調配物之方法。在本發明之其他態樣中,提供自根據本發明之組合物製備的導電網路。在某些態樣中,本發明係關於包含黏著至相應之合適基板之此類燒結膜及膠的物品。
Description
本發明係關於可燒結膜及膠及適用於製備此類膜及膠之組合物。在一個態樣中,本發明係關於製造此類組合物之方法。在另一態樣中,本發明係關於自根據本發明之組合物製備的導電網路及製造該等導電網路之方法。在又一態樣中,本發明係關於將導電膜層合至基板上之方法及將導電膠施配至基板上之方法。
歸因於要求在電子裝置中使用無鉛材料之環境法規,晶粒附接工業專注於軟焊料替代材料。另外,晶粒附接材料必須具有合適的熱導率及電導率,對於電路密度增加之較小半導體裝置而言尤其如此。燒結膜先前尚不能夠用於此目的,因為使用半導體工業中所使用之習知層合機難以層合該等膜。具體言之,燒結膜具有高金屬含量,此致使燒結膜表面乾燥且阻礙該膜之層合及結合效能。此外,將燒結膜層合至晶圓上以及隨後將晶粒及膜結合至基板需要高的溫度及壓力。層合及結合燒結膜所需之此等高溫度及壓力超出了半導體工業中之常用半導體處理設備所提供的能力。
根據本發明,提供作為在電子工業及其他工業應用內(例如,在晶粒附接半導體封裝中)使用的具有有利性質的導電晶粒附接材料之
可燒結(亦即,燒結)膜及膠。舉例而言,本文中所描述之燒結膜及膠可用於功率離散元件之引線框架上的晶粒附接應用、用於作為高效能離散元件之線結合替代的銅跳線取放(clip attach)應用、用於藉由經曝露墊冷卻功率離散元件之散熱塊附接應用(heat slug attach application)、用於單及多晶粒裝置及用於在晶粒與框架之間需要高電導率及/或熱導率之其他裝置。亦提供適用於製備此類膜及膠之調配物,以及製造此類調配物之方法。
根據本發明之另一態樣,提供自根據本發明之組合物製備的導電網路。在某些態樣中,本發明係關於包含黏著至相應之合適基板之此類燒結膜及膠的物品。
如本文中所描述之燒結膜組合物可使用習知低溫度及壓力層合機層合至晶圓上。另外,在結合及固化之後,燒結膜與基板之間的潤濕能力被維持,且達成恰當燒結形態。
另外,自本發明之組合物製備的燒結膜可如圖1及圖2中所分別描繪按可撓性卷形式或按預切割形式來製造。在可撓性卷形式或預切割形式中,該膜可包夾於適用於彼等形式中的基板之間,該等基板包括離型襯墊、分割帶及其類似者。藉助於實例,燒結膜(在圖1及圖2中標記為「晶粒附接膜」)按圖1中所展示之可撓性卷形式包夾於兩個離型襯墊之間,且按圖2中所展示之預切割形式包夾於離型襯墊與分割帶之間。
10‧‧‧可撓性卷形式
12‧‧‧引導離型襯墊
14‧‧‧燒結膜
16‧‧‧寬鬆離型襯墊
18‧‧‧緊密離型襯墊
20‧‧‧預切割形式
22‧‧‧燒結膜
24‧‧‧分割帶
26‧‧‧離型襯墊
30‧‧‧經燒結膜
32‧‧‧TiNiAg晶粒表面
36‧‧‧微粒填充劑
38‧‧‧經燒結銀
42‧‧‧孔隙或多孔區域
44‧‧‧第一金屬間層
46‧‧‧第二金屬間層/塗有銀之引線框架
48‧‧‧樹脂
A-A‧‧‧線
B-B‧‧‧線
圖1A至圖1B描繪按可撓性卷形式製造之可燒結膜。
圖2A至圖2B描繪按預切割形式製造之可燒結膜。
圖3A描繪自本文中所描述之組合物製備之可燒結膜。
圖3B為圖3A之放大圖。
本文中描述製造具有出乎意料的低溫度及壓力層合性質之燒結膜的組合物及方法。具體言之,本文中所描述之組合物包括黏合劑、填充劑及產生低溫度及壓力層合膜之其他組份。該等膜展現經改良可加工性及潤濕能力,而不犧牲作為半導體之晶粒附接材料之膜的燒結能力。另外,特定而言由本文中所描述之組合物產生的燒結膜為可撓性的,且可由生產塗佈機製備為卷。
根據本發明,本文中提供燒結膜之組合物,其包含:至少一種熱固性樹脂或熱塑性樹脂組份,包括:一或多種環氧單體、寡聚物或聚合物,丙烯酸單體、寡聚物或聚合物,酚系樹脂,酚醛清漆,聚胺基甲酸酯,氰酸酯,聚乙烯醇,聚酯,聚脲,聚乙烯縮醛樹脂,苯氧基樹脂,順丁烯二醯亞胺,雙順丁烯二醯亞胺,聚醯亞胺或其混合物;一或多種導電填充劑;及視情況選用之有機稀釋劑,其中該組合物在100℃或更低之溫度及40psi或更低之壓力下層合至晶圓上;且其中在經固化或燒結時,該組合物具有在260℃下至少1.0kg/mm2之晶粒剪切強度,如使用經鈦-鎳-銀金屬化之晶粒及銀引線框架基板測得。
在一些實施例中,在附接至晶粒時,該組合物在0.2kg/mm2至1kg/mm2之壓力下結合至基板。晶粒大小不受限制,且可為(例如)1×1mm或更小直至8×8mm或更大。
根據本發明,本文中亦提供燒結膠之組合物,其包含:至少一種熱固性樹脂或熱塑性樹脂組份,包括:一或多種環氧單體、寡聚物或聚合物,丙烯酸單體、寡聚物或聚合物,酚系樹脂,酚醛清漆,聚胺基甲酸酯,氰酸酯,聚乙烯醇,聚酯,聚脲,聚乙烯
縮醛樹脂,苯氧基樹脂,順丁烯二醯亞胺,雙順丁烯二醯亞胺,聚醯亞胺或其混合物;一或多種導電填充劑;視情況選用之微粒填充劑;及有機稀釋劑,其中在經固化或燒結時,該組合物具有在260℃下至少1.0kg/mm2之晶粒剪切強度,如使用經鈦-鎳-銀金屬化之晶粒及銀引線框架基板測得。
本文中所描述之組合物包括至少一種熱固性樹脂或熱塑性樹脂組份。在本文中所描述之組合物中提供熱固性樹脂或熱塑性樹脂組份以改良自組合物製備之膜的膜品質、黏性、潤濕能力、可撓性、使用期限、高溫黏著力、樹脂填充劑相容性及燒結能力。另外,在本文中所描述之組合物中提供熱固性樹脂或熱塑性樹脂組份以改良自組合物製備之膠的流變性、可施配性、使用期限及燒結能力。熱固性樹脂或熱塑性樹脂組份可為能夠將上文所列舉之性質提供至組合物的任何樹脂,包括(但不限於)環氧樹脂、酚系樹脂、酚醛清漆(例如,酚及甲酚(cresolic))、丙烯酸樹脂、聚胺基甲酸酯、氰酸酯、聚乙烯醇、聚酯,聚脲、聚乙烯縮醛樹脂、苯氧基樹脂、順丁烯二醯亞胺、雙順丁烯二醯亞胺及聚醯亞胺,如下文進一步描述。
預期用於本文中之一或多種環氧單體、寡聚物或聚合物(在本文中亦被稱作環氧樹脂)可包括具有脂族主鏈、芳族主鏈、經改質環氧樹脂或此等者之混合物的環氧樹脂。在某些實施例中,一或多種環氧單體、寡聚物或聚合物包括經官能化環氧單體、寡聚物或聚合物。環氧樹脂中之環氧官能基為至少一個。在一些實施例中,環氧樹脂為一(亦即,環氧樹脂為單官能環氧樹脂)。在其他實施例中,環氧樹脂含有至少兩個或兩個以上環氧官能基(例如,2、3、4、5或更多)。
用於本發明中之環氧樹脂不限於具有特定分子量之樹脂。例示性環氧樹脂可具有在約50或更小直至約1,000,000範圍內之分子量。在某些實施例中,預期視情況用於本文中之環氧樹脂具有在約200,000直至約900,000範圍內之分子量。在其他實施例中,預期視情況用於本文中之環氧樹脂具有在約10,000直至約200,000範圍內之分子量。在其他實施例中,預期視情況用於本文中之環氧樹脂具有在約1,000直至約10,000範圍內之分子量。在其他實施例中,預期視情況用於本文中之環氧樹脂具有在約50直至約10,000範圍內之分子量。
在一些實施例中,環氧樹脂可為含有芳族及/或脂族主鏈之液態環氧樹脂或固態環氧樹脂,諸如雙酚F之二縮水甘油醚或雙酚A之二縮水甘油醚。視情況,環氧樹脂為可撓性環氧樹脂。可撓性環氧樹脂可具有可變長度之鏈長(例如,短鏈或長鏈),諸如短鏈長或長鏈長聚乙二醇二環氧化物液態樹脂。例示性短鏈長聚乙二醇二環氧化物液態樹脂包括D.E.R.736,且例示性長鏈長聚乙二醇二環氧化物液態樹脂包括D.E.R.732,該二者可自Dow Chemical公司(Midland,MI)購得。
在一些實施例中,環氧樹脂可為韌化環氧樹脂,諸如環氧化羧基封端之丁二烯-丙烯腈(CTBN)寡聚物或聚合物、環氧化聚丁二烯二縮水甘油醚寡聚物或聚合物、雜環環氧樹脂(例如,異氰酸酯改質環氧樹脂)及其類似物。
在某些實施例中,環氧化CTBN寡聚物或聚合物為具有以下結構之寡聚或聚合前驅體的含環氧衍生物:HOOC[(Bu)x(ACN)y]mCOOH
其中:每一Bu為丁烯部分(例如,1,2-丁二烯基或1,4-丁二烯基),每一ACN為丙烯腈部分,Bu單元及ACN單元可無規或以嵌段排列,
x及y中之每一者大於零,x+y之總和=1,x:y之比屬於約10:1至1:10範圍內,且m屬於約20至約100範圍內。
如熟習此項技術者所易於辨識,環氧化CTBN寡聚物或聚合物可以多種方式(例如)自(1)羧基封端之丁二烯/丙烯腈共聚物、(2)環氧樹脂及(3)雙酚A藉由在CTBN之羧酸基與環氧樹脂之間的反應(經由鏈延長反應)及其類似方式製得:
在一些實施例中,環氧樹脂可包括如上文所描述之由(1)羧基封端之丁二烯/丙烯腈共聚物、(2)環氧樹脂及(3)雙酚A製得之環氧化CTBN寡聚物或聚合物;HyproTM環氧官能丁二烯-丙烯腈聚合物(先前為Hycar® ETBN)及其類似物。
在某些實施例中,預期用於本文中之環氧樹脂包括橡膠或彈性體改質環氧樹脂。橡膠或彈性體改質環氧樹脂包括以下各物之環氧化衍生物:(a)如美國專利第4,020,036號(該專利之全部內容特此以引用之方式併入本文中)中所描述的共軛二烯之均聚物或共聚物,其具有30,000至400,000或更高之重量平均分子量(Mw),其中共軛二烯含有每分子4至11個碳原子(諸如,1,3-丁二烯、異戊二烯及其類似物);(b)表鹵代醇均聚物、兩種或兩種以上表鹵代醇單體之共聚物,或表鹵代醇單體與氧化物單體之共聚物,其具有約800至約50,000之數量平均分子量(Mn),如美國專利第4,101,604號中所描述(該專利之全部內容特此以引用之方式併入本文中);
(c)烴聚合物,包括乙烯/丙烯共聚物及乙烯/丙烯與至少一種非共軛二烯之共聚物,諸如乙烯/丙烯/己二烯/降冰片二烯,如美國專利第4,161,471號中所描述;或(d)共軛二烯丁基彈性體,諸如由與約0.5重量%至約15重量%之具有4至14個碳原子的共軛多烯烴組合的85重量%至99.5重量%之C4-C5烯烴構成的共聚物;異丁烯與異戊二烯之共聚物,組合於其中的異戊二烯單元之主要部分具有共軛二烯不飽和度(參見(例如)美國專利第4,160,759號;該專利之全部內容特此以引用之方式併入本文中)。
在某些實施例中,環氧樹脂為環氧化聚丁二烯二縮水甘油醚寡聚物或聚合物。
在某些實施例中,預期用於本文中之環氧化聚丁二烯二縮水甘油醚寡聚物具有以下結構:
其中:R1及R2各獨立地為H或低碳烷基,R3為H、飽和或不飽和烴基,或環氧基,上文所闡述之至少1種含環氧重複單元及上文所闡述之至少一種烯烴重複單元存在於每一寡聚物中,且當存在時,各重複單元以1-10之範圍存在,且n屬於2至150範圍內。
在某些實施例中,預期用於實踐本發明之環氧化聚丁二烯二縮水甘油醚寡聚物或聚合物具有以下結構:
其中R為H、OH、低碳烷基、環氧基、經環氧乙烷取代之低碳烷基、芳基、烷芳基及其類似物。預期用於本文中之環氧樹脂的其他實例包括具有可撓性主鏈之環氧樹脂。舉例而言,環氧樹脂可包括:
及其類似物。
在一些實施例中,額外環氧材料可包括於本發明調配物中。當包括於本發明調配物中時,廣泛多種環氧官能化樹脂被預期用於本文中,例如基於雙酚A之環氧樹脂(例如,Epon樹脂834)、基於雙酚F之環氧樹脂(例如,RSL-1739或JER YL980)、基於酚系-酚醛清漆樹脂之多官能環氧樹脂、二環戊二烯型環氧樹脂(例如,Epiclon HP-7200L)、萘型環氧樹脂及其類似物,以及其任何兩者或兩者以上之混合物。
預期用於本文中之例示性環氧官能化樹脂包括環脂族醇之二環氧化物、經氫化雙酚A(市售為Epalloy 5000)、六氫酞酐之雙官能環脂族縮水甘油基酯(市售為Epalloy 5200)、Epiclon EXA-835LV、Epiclon HP-7200L及其類似物,以及其任何兩者或兩者以上之混合物。
適合於用作本發明調配物之視情況選用之額外組份的習知環氧材料之額外實例包括:
及其類似物。
預期用於本文中之例示性環氧官能化樹脂包括環氧化CTBN橡膠561A、24-440B及EP-7(可自Henkel公司;Salisbury,NC & Rancho Dominguez,CA購得);環脂族醇之二環氧化物、經氫化雙酚A(市售為Epalloy 5000);六氫酞酐之雙官能環脂族縮水甘油基酯(市售為Epalloy 5200)、ERL 4299、CY-179、CY-184;及其類似物,以及其任何兩者或兩者以上之混合物。
視情況,環氧樹脂可為具有主鏈之共聚物,該主鏈為單體單元之混合物(亦即,混合式主鏈)。環氧樹脂可包括直鏈或分支鏈段。在某些實施例中,環氧樹脂可為環氧化聚矽氧單體或寡聚物。視情況,環氧樹脂可為可撓性環氧聚矽氧共聚物。預期用於本文中之例示性可撓性環氧聚矽氧共聚物包括ALBIFLEX 296及ALBIFLEX 348,該二者可自Evonik Industries(德國)購得。
在一些實施例中,一種環氧單體、寡聚物或聚合物存在於組合
物中。在某些實施例中,環氧單體、寡聚物或聚合物之組合存在於組合物中。舉例而言,兩種或兩種以上、三種或三種以上、四種或四種以上、五種或五種以上或六種或六種以上環氧單體、寡聚物或聚合物存在於組合物中。可選擇環氧樹脂之組合且使用其來達成自組合物製備之膜或膠的所要性質。舉例而言,可選擇環氧樹脂之組合以使得自組合物製備之膜展現經改良膜品質、黏性、潤濕能力、可撓性、使用期限、高溫黏著力、樹脂填充劑相容性及燒結能力。可選擇環氧樹脂之組合以使得自組合物製備之膠展現經改良流變性、可施配性、使用期限及燒結能力。
一或多種環氧單體、寡聚物或聚合物可按以組合物之總固體含量(亦即,不包括稀釋劑之組合物)的重量計多達約10百分比之量存在於組合物中。舉例而言,一或多種環氧單體、寡聚物或聚合物可以約0.1重量百分比至約10重量百分比、約0.5重量百分比至約8重量百分比或約1重量百分比至約6重量百分比之量存在於組合物中。在一些實施例中,一或多種環氧單體、寡聚物或聚合物可以按組合物之總固體含量的重量計約10重量百分比或更小、約9重量百分比或更小、約8重量百分比或更小、約7重量百分比或更小、約6重量百分比或更小、約5重量百分比或更小、約4重量百分比或更小、約3重量百分比或更小、約2重量百分比或更小或約1重量百分比或更小之量存在於組合物中。
本文中所描述之組合物可進一步包括丙烯酸單體、聚合物或寡聚物。預期用於實踐本發明之丙烯酸酯為此項技術中熟知的。參見(例如)美國專利第5,717,034號,該專利之全部內容特此以引用之方式併入本文中。用於本發明中之丙烯酸單體、聚合物或寡聚物不限於特定分子量。例示性丙烯酸樹脂可具有在約50或更小直至約1,000,000範圍內之分子量。在一些實施例中,預期視情況使用之丙烯酸聚合物可具有在約100直至約10,000範圍內之分子量及在約-40℃直至約20℃範
圍內之Tg。在某些實施例中,預期視情況用於本文中之丙烯酸聚合物具有在約10,000直至約900,000(例如,約100,000直至約900,000或約200,000直至約900,000)範圍內之分子量及在約-40℃直至約20℃範圍內之Tg。用於本文中所描述之組合物中的丙烯酸共聚物之實例包括Teisan Resin SG-P3及Teisan Resin SG-80H(該二者可自日本Nagase Chemtex公司購得)。視情況,用於本文中所描述之組合物中的丙烯酸聚合物或寡聚物可為可降解丙烯酸聚合物或寡聚物或環氧改質丙烯酸樹脂。
丙烯酸單體、聚合物或寡聚物可按以組合物之總固體含量的重量計多達約10百分比之量存在於組合物中。舉例而言,丙烯酸單體、共聚物或寡聚物可以約0.05重量百分比至約7重量百分比或約0.1重量百分比至約3重量百分比之量存在於組合物中。在一些實施例中,丙烯酸單體、共聚物或寡聚物以按組合物之總固體含量的重量計約10重量百分比或更小、約9重量百分比或更小、約8重量百分比或更小、約7重量百分比或更小、約6重量百分比或更小、約5重量百分比或更小、4重量百分比或更小、約3重量百分比或更小、約2重量百分比或更小或約1重量百分比或更小之量存在於組合物中。
用於本文中所描述之組合物中的額外熱固性樹脂或熱塑性樹脂組份可包括聚胺基甲酸酯、氰酸酯、聚乙烯醇、聚酯、聚脲、聚乙烯縮醛樹脂及苯氧基樹脂。在一些實施例中,組合物可包括含醯亞胺單體、寡聚物或聚合物,諸如順丁烯二醯亞胺、靛酚醯亞胺(nadimides)、衣康醯亞胺、雙順丁烯二醯亞胺或聚醯亞胺。
熱固性樹脂或熱塑性樹脂組份可經組合以形成黏合劑,該等熱固性樹脂或熱塑性樹脂組份包括:一或多種環氧單體、聚合物或寡聚物;丙烯酸單體、聚合物或寡聚物;酚系樹脂;酚醛清漆;聚胺基甲酸酯;氰酸酯;聚乙烯醇;聚酯;聚脲;聚乙烯縮醛樹脂;苯氧基樹
脂;及/或含醯亞胺單體、聚合物或寡聚物(例如,順丁烯二醯亞胺、雙順丁烯二醯亞胺及聚醯亞胺)。黏合劑可為固態、半固態或液態的。視情況,黏合劑具有小於350℃之分解溫度。
本文中所描述之組合物亦包括一或多種導電填充劑,包括銀。在一些實施例中,存在於組合物中之導電填充劑為銀。在其他實施例中,可連同銀包括一或多種額外導電填充劑。預期用於實踐本發明之額外導電填充劑包括鎳、鈷、銅、鍍銀金屬、鍍鎳金屬、鍍銀石墨、塗有銀之聚合物、鍍鎳石墨、鍍鎳聚合物、金、鈀、鉑、碳黑、碳纖維、石墨、碳奈米管、鋁、氧化銦錫、塗有銀之銅、塗有銀之鋁、塗有銀之石墨、塗有鎳之石墨、鉍、錫、鉍錫合金、塗有金屬之玻璃球、塗有銀之纖維、塗有銀之球、摻銻氧化錫、碳奈米管、導電奈米填充劑、此類金屬之合金及其類似物,以及其任何兩者或兩者以上之混合物。此等及類似金屬及金屬合金為市售的。
導電填充劑可具有適合用於本文所描述之方法中的大小,且不限於任何特定範圍。諸如銀之例示性導電填充劑可具有在約0.1μm至約20μm範圍內之平均粒徑。在一些實施例中,導電填充劑可具有在約1μm至約10μm範圍內之平均粒徑。在其他實施例中,導電填充劑可具有在約1μm至約3μm範圍內之平均粒徑。
在一些實施例中,銀作為存在於組合物中之全部導電填充劑中的主要導電填充劑(亦即,至少50重量百分比,至少60重量百分比,至少70重量百分比,至少80重量百分比或至少90重量百分比)連同一或多種額外導電填充劑一起存在。
導電填充劑按以組合物之總固體含量的重量計至少65百分比之量存在於組合物中。舉例而言,導電填充劑可按約65重量百分比至約95重量百分比或約75重量百分比至約85重量百分比之量存在於組合物中。在一些實施例中,導電填充劑可按以組合物之總固體含量的重量
計至少約65百分比、至少約70百分比、至少約75百分比、至少約80百分比、至少約85百分比或至少約90百分比之量存在於組合物中。
本文中所描述之組合物可視情況包括一或多種微粒填充劑。微粒填充劑可包括(例如)二氧化矽、鎳基合金、鐵基合金、鎢酸鋯或其混合物。舉例而言,微粒填充劑可為鎳/鐵組合物或矽酸鋁鋰。例示性微粒填充劑具有10ppm/℃或更低(例如,5ppm/℃或更低,0ppm/℃或更低,或-5ppm/℃或更低)之熱膨脹係數(CTE)。在一些實施例中,微粒填充劑可包括以下材料:合金42、碳奈米管、β-鋰霞石、α-ZrW2O8、β-ZrW2O8、Cd(CN)2、ReO3、(HfMg)(WO4)3、Sm2.75C60、Bi0.95La0.05NiO3、鎳鋼(Fe-36Ni)、鎳鋼(Fe3Pt)、Tm2Fe16Cr、CuO奈米粒子、Mn3Cu0.53Ge0.47N、Mn3ZN0.4Sn0.6N0.85C0.15、Mn3Zn0.5Sn0.5N0.85C0.1B0.05及其混合物。
微粒填充劑可按以組合物之總固體含量的重量計約20百分比或更小(亦即,多達20百分比)之量存在於組合物中。舉例而言,微粒填充劑可按以組合物之總固體含量的重量計小於約20百分比、小於約19百分比、小於約18百分比、小於約17百分比、小於約16百分比、小於約15百分比、小於約14百分比、小於約13百分比、小於約12百分比、小於約11百分比、小於約10百分比、小於約9百分比、小於約8百分比、小於約7百分比、小於約6百分比、小於約5百分比、小於約4百分比、小於約3百分比、小於約2百分比或小於約1百分比之量存在於組合物中。
本文中所描述之組合物可進一步包括稀釋劑,包括(例如)有機稀釋劑。有機稀釋劑可為反應性有機稀釋劑、非反應性有機稀釋劑或其混合物。例示性稀釋劑包括(例如):芳族烴(例如,苯、甲苯、二甲苯及其類似物);脂族烴(例如,己烷、環己烷、庚烷、十四烷及其類似物);氯化烴(例如,二氯甲烷、氯仿、四氯化碳、二氯乙烷、三氯乙
烯及其類似物);醚(例如,乙醚、四氫呋喃、二噁烷、二醇醚、乙二醇之單烷基或二烷基醚及其類似物);酯(例如,乙酸乙酯、乙酸丁酯、甲氧基乙酸丙酯及其類似物);多元醇(例如,聚乙二醇、丙二醇、聚丙二醇及其類似物);酮(例如,丙酮、甲基乙基酮及其類似物);醯胺(例如,二甲基甲醯胺、二甲基乙醯胺及其類似物);雜芳族化合物(例如,N-甲基吡咯啶酮及其類似物);及雜脂族化合物。
預期根據本發明使用之非反應性稀釋劑的量可廣泛地變化,只要使用之量足以溶解及/或分散本發明組合物之組份即可。當存在時,所使用之非反應性稀釋劑的量通常屬於以組合物之重量計約2百分比直至約30百分比之範圍內。在某些實施例中,非反應性稀釋劑之量屬於以總組合物之重量計約5百分比直至20百分比之範圍內。在一些實施例中,非反應性稀釋劑之量屬於以總組合物之重量計約10百分比直至約18百分比之範圍內。預期根據本發明使用之反應性稀釋劑的量可為以組合物之重量計多達5百分比(例如,5百分比或更小、4百分比或更小、3百分比或更小、2百分比或更小或1百分比或更小)。
如熟習此項技術者所易於辨識,在某些實施例中,本發明組合物實質上不含有非反應性稀釋劑。即使非反應性稀釋劑曾經存在,其亦可在B分段製程中形成膜期間被移除,如本文中進一步描述。
本文中所描述之組合物可視情況包括一或多種固化劑。固化劑可視情況充當組合物中之導電性促進劑及/或還原劑。預期用於實踐本發明之固化劑包括尿素、脂族及芳族胺、聚醯胺、咪唑、雙氰胺、醯肼、脲-胺混合式固化系統、自由基引發劑、有機鹼、過渡金屬觸媒、酚、酸酐、路易斯酸、路易斯鹼及其類似物。參見(例如)美國專利第5,397,618號,該專利之全部內容特此以引用之方式併入本文中。
固化劑可視情況按以組合物之總固體含量的重量計多達約4百分比之量存在於組合物中。在一些實施例中,固化劑不存在於組合物中
(亦即,以組合物之總固體含量的重量計0百分比)。在其他實施例中,固化劑可以約0.05重量百分比至約4重量百分比或約0.1重量百分比至約3重量百分比之量存在於組合物中。視情況,固化劑以約4重量百分比或更小、約3重量百分比或更小、約2重量百分比或更小或約1重量百分比或更小之量存在於組合物中。
本文中所描述之組合物可視情況包括一或多種助熔劑,諸如羧酸。視情況,用於組合物中之助熔劑可為在燒結過程期間重排以釋放充當助熔劑之羧酸的潛伏助熔劑。適合用於本文中所描述之組合物中的潛伏助熔劑之實例包括以下結構,該潛伏助熔劑在本文中被稱作二酸1550-VEGE加合物:
助熔劑可按以組合物之總固體含量的重量計多達約10百分比之量存在於組合物中。舉例而言,助熔劑可按約0.1重量百分比至約10重量百分比、約0.2重量百分比至約8重量百分比或約1重量百分比至約5重量百分比之量存在於組合物中。在一些實施例中,助熔劑按約10重量百分比或更小、約9重量百分比或更小、約8重量百分比或更小、約7重量百分比或更小、約6重量百分比或更小、約5重量百分比或更小、約4重量百分比或更小、約3重量百分比或更小、約2重量百分比或更小或約1重量百分比或更小之量存在於組合物中。在一些實施例中,助熔劑不存在於組合物中(亦即,0重量百分比)。
本文中所描述之組合物可進一步視情況包括一或多種額外組份:流動添加劑、黏著促進劑、流變改質劑、導電性促進劑(例如,過氧化物)、界面活性劑、韌化劑、膜增韌劑、環氧固化觸媒、固化
劑、自由基聚合調節劑、自由基穩定劑或其混合物。
本發明組合物之每一組份之量可廣泛地變化。例示性組合物包含:多達10wt%之一或多種環氧單體、寡聚物或聚合物,多達10wt%之該丙烯酸單體、寡聚物或聚合物,視情況,多達4wt%之該含醯亞胺單體、寡聚物或聚合物,至少65wt%之該導電填充劑,視情況,多達5wt%之選自黏著促進劑、導電性促進劑及界面活性劑的額外組份,及視情況,多達20wt%之微粒填充劑,其各自以組合物之總固體含量的重量百分比計。
視情況,組合物可包含多達30wt%之有機稀釋劑。
在一些實施例中,本發明組合物之每一組份之量屬於以下大約範圍內:1wt%至10wt%之該一或多種環氧單體、寡聚物或聚合物,1wt%至10wt%之該丙烯酸單體、寡聚物或聚合物,65wt%至95wt%之該導電填充劑,視情況,多達5wt%之選自黏著促進劑、導電性促進劑及界面活性劑的一或多種額外組份,視情況,3wt%至20wt%之微粒填充劑,其各自以組合物之總固體含量的重量百分比計。
視情況,組合物可包含多達5wt%之有機稀釋劑。
在一些實施例中,本發明組合物之每一組份之量屬於以下大約範圍內:1wt%至6wt%之該一或多種環氧單體、寡聚物或聚合物,視情況,多達3wt%(亦即,0wt%至3wt%)之該丙烯酸單體、寡
聚物或聚合物,65wt%至95wt%之該導電填充劑,視情況,多達5wt%之選自黏著促進劑、導電性促進劑及界面活性劑的額外組份,3wt%至20wt%之微粒填充劑,其各自以組合物之總固體含量的重量百分比計。
視情況,組合物可包含多達30wt%之有機稀釋劑。
本文中所描述之組合物提供多個有用效能性質。舉例而言,在經固化或燒結時,組合物具有在260℃下至少1.0kg/mm2之晶粒剪切強度(例如,在260℃下至少1.5kg/mm2)。另外,組合物在100℃或更低之溫度及40psi或更低之壓力下層合至晶圓上。此外,呈膜形式之組合物可經受分割及拾取過程以產生可在範圍可介於約110℃至350℃之溫度下且在約0.2kg/mm2至1kg/mm2之壓力下結合至基板的晶粒/膜。晶粒大小可在約1×1mm或更小至約8×8mm或更大之範圍內。結合時間可少於3秒。下文進一步描述此等效能性質。
在本發明之某些實施例中,提供製造本文中所描述之組合物的方法。本發明組合物可以燒結膜形式或以燒結膠形式製得。
用於形成燒結膜之本發明方法包含使組份之預期組合經受高剪切混合歷時足以獲得實質上均勻摻合物之時間段。在一些實施例中,組份可混合歷時多達約3小時之時間段(例如,約1小時至3小時)。組份之組合可在室溫下混合。
在組合物將呈燒結膜形式之實施例中,組合物被施加於合適基板(例如,離型襯墊),且隨後在高溫下加熱以自其移除實質上所有非反應性稀釋劑(亦即,溶劑)。舉例而言,可移除溶劑之至少65%、至少75%、至少80%、至少85%、至少90%、至少95%或至少99%。加熱燒結膠以使其乾燥成膜之過程在本文中被稱作B分段。所得膜可具有
約5微米至約50微米之厚度。
在本發明之某些實施例中,提供包含在自上文所描述之B分段組合物移除實質上所有溶劑/稀釋劑後獲得之反應產物的燒結膜。該膜可捲繞於捲筒上。
可使用半導體工業中之習知層合機將如本文中所描述之膜層合至基板(例如,晶圓)上。舉例而言,可使用捲筒層合機將該膜層合至晶圓上。可使用之例示性層合機包括DFM 2700(日本Disco公司)、Leonardo 200 LD(義大利Microcontrol Electronic)及Western Magnum XRL-120(El Segundo,CA)。如上文所描述,可在小於100℃(例如,95℃或更小、90℃或更小、85℃或更小、80℃或更小、75℃或更小、70℃或更小或65℃或更小)之溫度下執行層合。可在40psi或更小(例如,35psi或更小或30psi或更小)之壓力下執行層合。
若被使用,則離型襯墊可自膜剝離。可隨後將膜層合至分割帶,分割帶充當分割過程期間之支撐件。膜至分割帶之層合可在室溫下執行。作為層合過程之結果,膜被固持於分割帶與晶圓之間且與該二者直接接觸。在分割過程期間,晶圓及膜可被分割成個別晶粒,其中膜黏著至晶粒。個別晶粒及所黏著膜可在拾取過程期間自分割帶移除,且隨後可在結合/晶粒附接步驟中附接至基板。結合/晶粒附接步驟可在約110℃至350℃之溫度下執行歷時小於3秒之結合時間。0.2kg/mm2至1kg/mm2之結合/晶粒附接壓力可用於多種晶粒大小(例如,用於在小於1×1mm至8×8mm或8×8mm以上之範圍內的晶粒大小)。可隨後在至少一種熱操作中處理所得晶粒/膜/基板組合件,該操作諸如在爐中固化、繼之以模製的線結合及其類似操作。
本文中預期之例示性燒結膜包括在該組合物在無壓力之情況下在約160℃至300℃範圍內之溫度下固化約10分鐘至2小時範圍內之時間時產生的膜。用於固化步驟之氛圍可為任何適合於固化之氛圍(諸
如,在氮氣下或在空氣氛圍中)。在一些實施例中,在氮氣氛圍下執行固化步驟。如熟習此項技術者已知,可基於用於進行固化步驟之氛圍而修改固化步驟之持續時間。
用於形成燒結膠之本發明方法包含使組份之預期組合歷時足以獲得實質上均勻摻合物之時間段。在一些實施例中,組份可被混合歷時多達約3小時之時間段(例如,約1小時至3小時)。組份之組合可在室溫下混合。
在本發明之某些實施例中,提供包含在混合一段時間之後的組份之組合之燒結膠。燒結膠隨後被施加於基板(例如,引線框架),繼之以如本文中所描述之至基板的晶粒附接過程。可使用如熟習此項技術者已知之方法來執行晶粒附接過程。舉例而言,可使用小於500mg之壓力在室溫下執行晶粒附接。可隨後固化所得材料。
本文中預期之例示性燒結膠包括在該組合物在約160℃至300℃範圍內之溫度下固化約10分鐘至2小時範圍內之時間時產生的燒結膠。可在具有或不具有壓力之爐中執行固化。舉例而言,可在壓力爐或無壓力爐中執行固化。用於固化步驟之氛圍可為任何適合於固化之氛圍(諸如,在氮氣下或在空氣氛圍中)。在一些實施例中,在氮氣氛圍下執行固化步驟。如熟習此項技術者已知,可基於用於進行固化步驟之氛圍而修改固化步驟之持續時間。
各種固化時程可經設計以符合從業者之需要。較低溫及較長時段的燒結製程條件可用於大的晶粒,使得溶劑被逐步移除,藉此確保無空隙的結合線。本文中提供典型燒結製程條件,但應理解,其他類似燒結製程條件可同樣有效。例示性燒結製程條件包括在30分鐘內自室溫升至175℃,繼之以在60分鐘內保持175℃;在30分鐘內自室溫升至200℃,繼之以在60分鐘內保持200℃;在30分鐘內自室溫升至220℃,繼之以在60分鐘內保持220℃;在15分鐘內自室溫升至110℃,繼之以
在60分鐘內保持110℃,繼之以在60分鐘內保持240℃;或在30分鐘內自室溫升至250℃,繼之以在60分鐘內保持250℃。視情況,燒結製程條件可包括較高溫度,諸如在60分鐘內自室溫升至300℃,繼之以在兩小時內保持300℃。
根據本發明之燒結晶粒附接膜及膠在固化後亦可參考其熱晶粒剪切而被特徵化。如本文中所使用,「熱晶粒剪切」指經固化膜或膠在260℃下之晶粒剪切。在一些實施例中,該經固化膜或膠在260℃下之熱晶粒剪切為至少1.0kg/mm2。在一些實施例中,該膜或膠之熱晶粒剪切為至少約1.50kg/mm2。在某些實施例中,該膜或膠之熱晶粒剪切為1.0kg/mm2至4kg/mm2。如上文所描述,使用經鈦-鎳-銀金屬化之晶粒及塗有銀之引線框架基板在晶粒剪切測試器上量測晶粒剪切強度。
根據本發明之燒結晶粒附接膜及膠在固化後亦可參考在85%相對濕度下曝露於85℃約3天之後其在260℃下之熱、濕潤晶粒剪切而被特徵化;在一些實施例中,在曝露於此等條件之後,該膜或膠之熱、濕潤晶粒剪切為至少1.0kg/mm2;在一些實施例中,在曝露於此等條件之後,該膜或膠之熱、濕潤晶粒剪切為至少1.0kg/mm2。
根據本發明之另一實施例,提供製備燒結晶粒附接膜及膠之方法,該方法包含在將上文所描述之組合物施加於合適基板之後自該等組合物移除實質上所有非反應性稀釋劑或溶劑。
預期用於本文中之合適基板包括引線框架。如本文中所使用,「引線框架」包含由銅或銅合金構成之底板,及形成於底板之上部表面(或兩個表面)上的保護塗層。保護塗層由選自由以下各者組成之群的至少一種金屬組成:金、金合金、銀、銀合金、鈀或鈀合金,且具有約10埃至500埃之厚度。保護塗層藉由合適方式形成,例如藉由氣相沈積。有可能藉助於氣相沈積或濕式電鍍在底板之表面與保護塗層
之間形成鎳或鎳合金之中間塗層。中間塗層之合適厚度在約50埃至20,000埃範圍內。參見(例如)美國專利第5,510,197號,該專利之全部內容特此以引用之方式併入本文中。
視情況,用於本發明中之基板包括經設計以用於半導體封裝之層合基板(例如,BT基板、FR4基板及其類似物)、聚對苯二甲酸乙二酯、聚甲基丙烯酸甲酯、聚乙烯、聚丙烯、聚碳酸酯、環氧樹脂、聚醯亞胺、聚醯胺、聚酯、玻璃及其類似物。
根據本發明之又一實施例,提供製備燒結晶粒附接膜及膠之方法。對於膠,方法可包含在將上文所描述之組合物施加於合適基板之後固化該等組合物,如上文所描述。在此固化過程期間,膠可經受燒結。對於膜,方法可包含將晶粒及膜高溫結合至合適基板,如上文所描述。在此結合過程期間,膜可經受燒結。視情況,製備燒結晶粒附接膜之方法可包括用以使燒結形態最佳化及用於裝置應力穩定化之固化過程。可在爐中執行固化過程。
如上文所描述,根據本發明之燒結膜及膠可用於晶粒附接。晶粒表面可視情況塗佈有金屬,諸如銀。
根據本發明之又一實施例,提供包含如本文中所描述之黏著至相應之合適基板之燒結晶粒附接膜及膠的物品。
根據本發明之物品可依據經固化燒結晶粒附接膜或膠與基板之黏著力而被特徵化;黏著力通常為在260℃下至少約1.0kg/mm2(例如,在260℃下至少約1.5kg/mm2);在一些實施例中,黏著力為在260℃下至少約2.5kg/mm2。如上文所描述,使用經鈦-鎳-銀金屬化之晶粒及塗有銀之引線框架基板在晶粒剪切測試器上量測晶粒剪切強度。
如熟習此項技術者所易於辨識,本發明物品之尺寸可在廣泛範圍內變化。例示性物品包括(例如)晶粒。用於本發明中之晶粒的表面積可變化。在一些實施例中,用於本發明中之晶粒可在1×1mm或更
小至8×8mm或更大之範圍內。
根據本發明之又一實施例,提供將燒結膜層合至晶圓上之方法,其包含:將如本文中所描述之燒結膜的組合物施加於晶圓;及在100℃或更低之溫度及40psi或更低之壓力下將組合物層合至晶圓上。
根據本發明之又一實施例,提供製備導電網路之方法,該方法包含:將如本文中所描述之燒結膜的組合物施加於晶圓;在100℃或更低之溫度及40psi或更低之壓力下將組合物層合至晶圓上以產生附接至晶圓之膜;分割附接至晶圓之膜以產生晶粒及膜;及在0.2kg/mm2至1kg/mm2之壓力下將晶粒及膜結合至基板。
根據本發明之又一實施例,提供製備導電網路之方法,該方法包含:以預定義圖案將如本文中所描述之燒結膠之組合物施加於基板(例如,引線框架);將組合物晶粒附接至晶粒及基板;及固化組合物。
視情況,可施加組合物以使得所得膜或膠以至少約5微米之厚度存在。舉例而言,膜之厚度可為約5微米至約50微米(例如,約5微米至約30微米),且膠之厚度可為約5微米至約50微米。
根據本發明之另一實施例,提供如本文中所描述而製備之導電網路。
本文中所描述之燒結膜及膠可用於電子工業及其他工業應用內。舉例而言,本文中所描述之燒結膜及膠可用於功率離散元件之引
線框架上的晶粒附接應用、用於作為高效能離散元件之線結合替代的銅跳線取放應用、用於藉由經曝露墊冷卻功率離散元件之散熱塊附接應用、用於單及多晶粒裝置及用於在晶粒與框架之間需要高電導率及/或熱導率之其他裝置。
圖1A至圖1B及圖2A至圖2B描繪自本發明之組合物製備的按可撓性卷形式(10)或按預切割形式(20)製造的燒結膜(亦被稱作「晶粒附接膜」)。在可撓性卷形式或預切割形式中,該膜可包夾於適用於彼等形式的基板之間,該等基板包括離型襯墊、分割帶及其類似者。離型襯墊可為約50μm,且膜可為約15μm至30μm。在圖1A中,可撓性卷形式(10)包括包夾於兩個離型襯墊(寬鬆離型襯墊(16)及緊密離型襯墊(18))之間的燒結膜(14)。亦描繪引導離型襯墊(12),其為離型襯墊之不包夾至燒結膜的一部分。圖1B為圖1A的沿線A-A之橫截面圖,其展示包夾於離型襯墊(16)與(18)之間的燒結膜(14)。圖2A描繪預切割形式(20),且圖2B表示圖2A的沿線B-B之橫截面圖,其展示包夾於分割帶(24)與離型襯墊(26)之間的燒結膜(22)。
藉由以下非限制性實例說明本發明之各種態樣。該等實例係出於說明之目的且不限制本發明之任何實踐。將理解,在不脫離本發明之精神及範疇的情況下,可作出各種變化及修改。一般熟習此項技術者易於知曉如何合成或購買本文中所描述之試劑及組份。
燒結膜
藉由組合如下表1中所闡述之組份來製備根據本發明之調配物。
藉由在高剪切速度下將表1中所展示之組份與溶劑混合(以組合物之重量計約30%)以產生塗佈漿料而製備表1中所展示之調配物A、B及C中之每一者的燒結膜。將塗佈漿料施加於離型襯墊且在約120℃至150℃下加熱5分鐘以移除溶劑且將組合物穩定化成燒結膜。隨後,將覆蓋襯墊施加於燒結膜且在110℃及30psi下層合以允許B分段膜黏附至覆蓋襯墊上,且將所得材料捲繞至燒結膜捲筒。藉由以下步驟達成晶粒附接:剝離覆蓋襯墊;在約90℃至95℃及約30psi至40psi下將膜層合至晶圓上;剝離離型襯墊;將膜層合至分割帶;分割膜及晶圓;自分割帶拾取經分割晶粒及膜;將經分割晶粒及膜附接至引線框架;在升高溫度及壓力下且在如本文中針對晶粒附接結合條件描述之時間條件下將晶粒、膜及引線框架結合在一起;且視情況根據如本文中所描述之固化條件對附接有晶粒的裝置執行固化或燒結過程。測試所得材料之熱晶粒剪切強度,如下文進一步描述。為了製備用於封裝內性質及可靠性測試之測試材料,在晶粒附接結合及固化之後執行線結合及模製過程。
圖3A為TiBiAg晶粒表面(32)與塗有銀之引線框架(46)之間的經燒
結膜(30)之橫截面的例示性掃描電子顯微法(SEM)表示,其在聚焦離子束(FIB)銑削之後被拍攝。圖3B為膜(30)之一部分的放大圖。經燒結膜(30)包括微粒填充劑(36)、經燒結銀(38)、樹脂(48)及孔隙或多孔區域(42)。另外,可燒結膜包括存在於材料中之金屬間層(例如,在鈦-鎳-銀晶粒表面與經燒結膜之間形成的金屬間層,及在經燒結膜與塗有銀之引線框架之間形成的金屬間層)。在TiNiAg晶粒表面(32)與經燒結膜(30)之間的界面處形成第一金屬間層(44)。在塗有銀之引線框架(46)與經燒結膜(30)之間的界面處形成第二金屬間層(46)。
1環氧樹脂1為脂族環氧樹脂與芳族環氧樹脂之加合物。2環氧樹脂2為環氧樹脂與CTBN橡膠之加合物。3丙烯酸聚合物為具有850,000之分子量(Mw)及12℃之玻璃轉變溫度的丙烯酸共聚物。4潛伏助熔劑為乙烯醚與羧酸之加合物。
量測晶粒剪切強度、熱導率及熱阻率,以及電導率,如下詳述。結果展示於表2中。
使用經鈦-鎳-銀金屬化之矽晶粒及塗有銀之銅基板在Dage系列4000晶粒剪切測試器上量測熱晶粒剪切強度(HDSS)。
藉由熱導率測試器(LFA 447 NanoFlash,可自德國NETZSCH-Geratebau公司購得)量測塊狀經固化材料之熱導率,且藉由T3Ster瞬態溫度量測系統(Mentor Graphics;Wilsonville,OR)量測熱阻率。
電導率被量測為體積電阻率,其係使用高阻電橋上之四點探針來測試。
表2中所展示之結果表明本發明組合物之經改良熱晶粒剪切強度、熱導率及熱阻率以及電導率。
燒結膠
藉由組合如下表3中所闡述之組份來製備根據本發明之調配物。
藉由在室溫下混合組份而製備表3中所展示之調配物D、E及F中之每一者的燒結膠。將膠施配至引線框架基板上,且在如上文所描述之條件下執行晶粒附接結合過程。根據如本文中所描述之固化條件固化晶粒附接裝置。測試所得材料之熱晶粒剪切強度。為了製備用於效能及可靠性測試之測試材料,在晶粒附接結合及固化之後執行線結合及模製過程。
根據以上實例1中所描述之方法量測晶粒剪切強度、熱導率及電導率。結果展示於表4中。
表4中所展示之結果表明本發明組合物之合適及/或經改良熱晶粒剪切強度、熱導率及電導率。
本發明之除本文中所展示及描述之彼等修改外的各種修改對熟習上述描述之技術者而言將為顯而易見的。此類修改亦意欲屬於所附
申請專利範圍之範疇內。
5環氧樹脂1為脂族環氧樹脂與芳族環氧樹脂之加合物。6環氧樹脂2為環氧樹脂與CTBN橡膠之加合物。7丙烯酸聚合物為具有850,000之分子量(Mw)及12℃之玻璃轉變溫度的丙烯酸共聚物。
本說明書中提及之專利及公開案指示熟習本發明所關於之技術者之水準。此等專利及公開案以引用之方式併入本文中,就如同每一個別申請案或公開案特定地且個別地以引用之方式併入本文中一樣。
前述描述說明本發明之特定實施例,但並不意欲限制其實施。以下申請專利範圍(包括其所有等效物)意欲界定本發明之範疇。
30‧‧‧經燒結膜
32‧‧‧TiNiAg晶粒表面
36‧‧‧微粒填充劑
38‧‧‧經燒結銀
42‧‧‧孔隙或多孔區域
44‧‧‧第一金屬間層
46‧‧‧第二金屬間層/塗有銀之引線框架
48‧‧‧樹脂
Claims (23)
- 一種燒結膜之組合物,其包含:熱固性樹脂或熱塑性樹脂組份,其選自由以下各者組成之群:一或多種環氧單體、寡聚物或聚合物,丙烯酸單體、寡聚物或聚合物,酚系樹脂,酚醛清漆,聚胺基甲酸酯,氰酸酯,聚乙烯醇,聚酯,聚脲,聚乙烯縮醛樹脂,苯氧基樹脂,順丁烯二醯亞胺,雙順丁烯二醯亞胺,聚醯亞胺或其混合物;一或多種導電填充劑;及視情況選用之有機稀釋劑,其中該組合物在100℃或更低之溫度及40psi或更低之壓力下層合至晶圓上;且其中該組合物在經固化或燒結時具有在260℃下至少1.0kg/mm2之晶粒剪切強度。
- 如請求項1之組合物,其中該組合物在附接至晶粒時,在0.2kg/mm2至1kg/mm2之壓力下結合至基板。
- 如請求項1之組合物,其進一步包含以下各物中之一或多者:助熔劑、流動添加劑、黏著促進劑、流變改質劑、導電性促進劑、界面活性劑、韌化劑、膜增韌劑、環氧固化觸媒、固化劑、自由基聚合調節劑、自由基穩定劑或其混合物。
- 如請求項1之組合物,其中該熱固性樹脂或熱塑性樹脂組份包含一或多種環氧單體、寡聚物或聚合物,且該一或多種環氧單體、寡聚物或聚合物包含具有脂族主鏈、芳族主鏈或其混合物之環氧樹脂。
- 如請求項1之組合物,其中該熱固性樹脂或熱塑性樹脂組份包含一或多種環氧單體、寡聚物或聚合物,且該一或多種環氧單 體、寡聚物或聚合物包含官能化環氧單體、寡聚物或聚合物。
- 如請求項1之組合物,其中該熱固性樹脂或熱塑性樹脂組份包含丙烯酸單體、寡聚物或聚合物。
- 如請求項1之組合物,其中該熱固性樹脂或熱塑性樹脂組份按以該組合物之總固體含量的重量計多達10百分比之量存在於該組合物中。
- 如請求項1之組合物,其中該一或多種導電填充劑包括銀。
- 如請求項8之組合物,其中該一或多種導電填充劑進一步包含以下各物中之一或多者:鎳、銅、鍍銀金屬、鍍鎳金屬、鍍銀石墨、塗有銀之聚合物、鍍鎳石墨或鍍鎳聚合物。
- 如請求項1之組合物,其中該一或多種導電填充劑按以該組合物之總固體含量的重量計至少65百分比之量存在於該組合物中。
- 如請求項1之組合物,其進一步包含微粒填充劑。
- 如請求項11之組合物,其中該微粒填充劑包括鎳基合金、鐵基合金、鎢酸鋯、二氧化矽或其混合物。
- 如請求項11之組合物,其中該微粒填充劑具有10ppm/℃或更低之熱膨脹係數。
- 如請求項11之組合物,其中該微粒填充劑按以該組合物之總固體含量的重量計多達20百分比之量存在於該組合物中。
- 如請求項1之組合物,其中該有機稀釋劑為反應性有機稀釋劑、非反應性有機稀釋劑或其混合物。
- 一種自如請求項1之組合物形成的膜。
- 一種用於將導電膜層合至晶圓上之方法,其包含:將如請求項1之組合物施加於晶圓;及在100℃或更低之溫度及40psi或更低之壓力下將該組合物層合至該晶圓上。
- 一種製備導電網路之方法,其包含:將如請求項1之組合物施加於晶圓;在100℃或更低之溫度及40psi或更低之壓力下將該組合物層合至該晶圓上以產生附接至晶圓之膜;分割附接至該晶圓之該膜以產生晶粒及膜;及在0.2kg/mm2至1kg/mm2之壓力下將該晶粒及膜結合至基板。
- 一種燒結膠之組合物,其包含:熱固性樹脂或熱塑性樹脂組份,其選自由以下各者組成之群:一或多種環氧單體、寡聚物或聚合物,丙烯酸單體、寡聚物或聚合物,酚系樹脂,酚醛清漆,聚胺基甲酸酯,氰酸酯,聚乙烯醇,聚酯,聚脲,聚乙烯縮醛樹脂,苯氧基樹脂,順丁烯二醯亞胺,雙順丁烯二醯亞胺,聚醯亞胺或其混合物;一或多種導電填充劑;微粒填充劑,其呈以該組合物之總固體含量的重量計多達20百分比之量;及有機稀釋劑,其中該組合物在經固化或燒結時具有在260℃下至少1.0kg/mm2之晶粒剪切強度。
- 如請求項19之組合物,其中該微粒填充劑選自由以下各者組成之群:鎳基合金、鐵基合金、鎢酸鋯、二氧化矽及其混合物。
- 如請求項19之組合物,其中該微粒填充劑具有10ppm/℃或更低之熱膨脹係數。
- 一種自如請求項19之組合物形成的膠。
- 一種製備導電網路之方法,其包含:將如請求項19之組合物施加於基板; 將該組合物晶粒附接至晶粒及該基板;及固化該組合物。
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- 2016-04-13 CN CN201680033792.XA patent/CN107709418B/zh active Active
- 2016-04-13 KR KR1020177033874A patent/KR102360575B1/ko active IP Right Grant
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- 2017-11-03 US US15/803,137 patent/US11745294B2/en active Active
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TWI765971B (zh) * | 2017-02-20 | 2022-06-01 | 日商積水化學工業股份有限公司 | 燒結材料、連接結構體、複合粒子、接合用組成物及燒結材料之製造方法 |
TWI841706B (zh) * | 2019-03-20 | 2024-05-11 | 日商住友電木股份有限公司 | 半導體封裝、半導體封裝之製造方法、及用於其之導熱性組成物 |
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JP2018524415A (ja) | 2018-08-30 |
CN107709418B (zh) | 2021-04-27 |
US11745294B2 (en) | 2023-09-05 |
EP3294799A1 (en) | 2018-03-21 |
WO2016182663A1 (en) | 2016-11-17 |
KR20180004746A (ko) | 2018-01-12 |
JP2023153928A (ja) | 2023-10-18 |
KR102360575B1 (ko) | 2022-02-09 |
EP3294799A4 (en) | 2018-11-21 |
US20230321765A1 (en) | 2023-10-12 |
CN107709418A (zh) | 2018-02-16 |
EP3294799B1 (en) | 2024-09-04 |
JP7519752B2 (ja) | 2024-07-22 |
TWI721979B (zh) | 2021-03-21 |
US12042883B2 (en) | 2024-07-23 |
US20180056449A1 (en) | 2018-03-01 |
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