TW201626498A - 箝制基板之方法及箝夾準備單元 - Google Patents

箝制基板之方法及箝夾準備單元 Download PDF

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TW201626498A
TW201626498A TW105109422A TW105109422A TW201626498A TW 201626498 A TW201626498 A TW 201626498A TW 105109422 A TW105109422 A TW 105109422A TW 105109422 A TW105109422 A TW 105109422A TW 201626498 A TW201626498 A TW 201626498A
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wafer
substrate
liquid
support structure
preparation unit
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TWI596699B (zh
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將 亨卓克 傑 迪
瑪寇 傑 加寇 威蘭德
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瑪波微影Ｉｐ公司
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
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Abstract

本發明係關於一種箝制基板(22)於基板支撐結構(23)的表面上之方法。首先，將液體施加於該基板支撐結構的一表面上，該表面設有複數個接觸元件，所施加液體使得該等接觸元件被一液體層所完全覆蓋；然後，提供該基板並將該基板放置於該液體層上；最後，從該基板底下移除液體，致使該基板擱置於該等接觸元件上且被該基板與該基板支撐結構的表面之間的液體之一毛細層所施加的毛細箝制力所箝制。

Description

箝制基板之方法及箝夾準備單元
本發明係關於一種用於將基板箝制於基板支撐結構的表面上之方法、一種用以將基板箝制於基板支撐結構上之箝夾準備單元、以及一種含有該箝夾準備單元之微影系統。
將一基板(例如：晶圓)箝制到一基板支撐結構(例如：晶圓台)的表面上在半導體產業中早為已知，特別是在微影系統中廣為人知。在這樣的微影系統中，藉由入射的光子或諸如離子及/或電子等帶電粒子，而使被箝制的基板產生圖案。箝制步驟能確保基板表面的目標部位產生高度精確的圖案，較佳地，不僅在曝光期間要使用箝制步驟作位置控制，而且在基板處置期間(例如：將基板插入微影系統的曝光室內及/或從該處移除)也要利用箝制步驟。
可以藉由吸走基板與基板支撐結構之間的空氣(亦即，在兩者之間產生真空)，而達到箝制效果。然而，假如在真空環境下需要上述位置控制，這樣的箝制機構並不會產生作用。因此，就產生出許多不同的解決方案以便在真空環境內箝制基板，例如藉由電子機械式箝制作用而箝制基板。要知道的是，這樣的方案並不適合與例如具有電子及/或離子等帶電粒子的一或多條光束一起使用。
本案申請人所申請之國際專利申請案第WO2009/011574號揭露一種微影系統，其具有利用一層靜止液體(以下稱之為「毛細層」)箝制基板的基板支撐結構。毛細層的厚度能夠使基板表面與基板支撐表面之間產生一壓力降。如WO2009/011574所述，此液體一邊黏著於基板表面而另一邊黏著於基板支撐結構，如此一來使液體表面產生圓周方向的延伸，且在此二表面之間以凹面方式延伸。即使施力將基板從基板支撐結構的表面移除，如此形成的凹面狀液體表面傾向維持其本身形狀。
在一些特殊的情形下，WO2009/011574中所述的基板箝制機構並未以最佳方式進行操作，其原因例如是由於在毛細層中存在有空隙的緣故。而且，由於蒸發過程的緣故，毛細層所存在的時間受到限制，因此，箝制機構僅適用於一些選定欲產生圖案的裝置。
本發明之一目的是要提出一種基板支撐結構，用以藉由一毛細層而將基板箝制於其一表面上；而且，本發明另外提出一種箝制基板於基板支撐結構的表面上之方法，該方法具有較佳性能。藉由提供箝制基板於基板支撐結構的表面上之方法，可以達成上述目的；該方法包含以下步驟：施加液體於該基板支撐結構的一表面上，該表面設有複數個接觸元件，致使該液體形成用於覆蓋該等接觸元件的一層；設置該基板並將該基板放置於該液體層上；以及從該基板底下移除一部份該液體，致使該基板擱置於該等接觸元件上且被該基板與該基板支撐結構的表面之間的液體之一毛細層施加的毛細箝制力所箝制。
根據本發明的另一型態，提出一種箝夾準備單元，用以箝制 一基板，該箝夾準備單元包含：一基板支撐結構，其一表面設有複數個接觸元件；一液體分配單元，用於施加液體於該基板支撐結構的表面上，致使該等接觸元件被一液體層覆蓋；一基板傳送單元，用於將該基板放置於該液體層上；以及一液體移除系統，用於從該基板底下移除一部份的液體，致使該基板擱置於該等複數個接觸元件上且被該基板與該基板支撐結構的表面之間的液體之一毛細層施加的毛細箝制力所箝制。
根據本發明的另一型態，提出一種從基板支撐結構上鬆開基板之方法，其中該基板被該基板與該基板支撐結構的表面之間的液體之一毛細層施加的毛細箝制力所箝制。此方法包含以下步驟：設置額外液體到該毛細層的一外圓周表面上的該毛細層；以及將該基板從該液體抬起。
根據本發明的另一型態，提出一種鬆開單元，其包含：一基板支撐結構，其一表面上藉由一毛細層而箝制有一基板；一液體移除系統，用於在該毛細層的一外圓周表面上的該基板下方提供額外液體到該毛細層；以及一基板傳送單元，用於從該液體層移除該基板。
根據本發明的另一型態，提出一種微影系統，包括一微影設備，該微影設備包含：一輻射系統，用以提供具有圖案的輻射光束；一光學系統，用以投影該具有圖案的輻射光束至一基板的一目標部位上；以及一箝夾準備單元，用以箝夾該基板至一基板支撐結構的一表面上。
很明顯地，仍可以其他不同的方式實施本發明的原理。
1‧‧‧毛細液體層
2‧‧‧第一基板
3‧‧‧第二基板/基板支撐結構
5,6‧‧‧平坦表面
8,8’‧‧‧外液體表面
11‧‧‧氣泡
13‧‧‧空隙
21‧‧‧毛細層
22‧‧‧基板
22a‧‧‧第一端部
22b‧‧‧未接觸端部
23‧‧‧基板支撐結構
26‧‧‧表面
27‧‧‧接觸元件(粒結)
28‧‧‧凹面狀外毛細/液體表面
29‧‧‧密封結構
31‧‧‧槽溝
33‧‧‧氣體入口
35‧‧‧氣體出口
37‧‧‧第一虛擬線
39‧‧‧第二虛擬線
41‧‧‧液體儲存槽
43‧‧‧通道
44‧‧‧流動控制單元
45‧‧‧閥體
47‧‧‧箭頭
51‧‧‧周圍框邊
61‧‧‧液體分配單元
62‧‧‧經陷入氣泡
64‧‧‧液體層
65,67‧‧‧箭頭
66,66a,66b‧‧‧通道
71‧‧‧毛細層
73‧‧‧蒸氣
75‧‧‧儲存槽
77‧‧‧儲存槽液體
82‧‧‧基板
83‧‧‧基板支撐結構
86‧‧‧表面
87‧‧‧接觸元件
91‧‧‧槽溝
93‧‧‧氣體入口
95‧‧‧氣體出口
111‧‧‧晶圓軌道
112‧‧‧箝夾準備單元
113,113a至113c‧‧‧微影設備
115‧‧‧箝制過程
116‧‧‧鬆開過程
117‧‧‧額外晶圓軌道
121‧‧‧晶圓支架
122‧‧‧晶圓
123‧‧‧晶圓支撐結構
124‧‧‧液體分配單元
125‧‧‧液體層
126a,126b‧‧‧連接器
127‧‧‧支撐桿
h‧‧‧高度、厚度
α‧‧‧傾斜角
業已參考附圖所示實施例說明本發明不同態樣，其中：圖1係概略顯示二結構之間的一毛細層之剖面圖。
圖2係概略顯示對圖1的毛細層的箝夾穩定性具有負面影響的多個製程之剖面圖。
圖3A係依據本發明第一實施例的一基板支撐結構之剖面圖。
圖3B係圖3A的基板支撐結構之俯視圖。
圖4概略顯示基板剝落的概念。
圖5係依據本發明第二實施例用以支撐基板的一基板支撐結構之剖面圖。
圖6A至6C係圖5的基板支撐結構之俯視圖，進一步顯示再次箝制(reclamping)的概念。
圖7A至7J係概略顯示執行依據本發明實施例中將基板箝制於基板支撐結構表面上之方法。
圖8A係概略顯示依據本發明第三實施例的基板支撐結構之俯視圖。
圖8B係概略顯示由圖8A的基板支撐結構及基板之組合所形成的一箝夾之剖面圖。
圖9係概略顯示基板處置及曝光配置，其可與多個實施例的基板支撐結構一起使用。
圖10係概略顯示另一個基板處置及曝光配置，其可與多個實施例的基板支撐結構一起使用。
圖11A至11D係概略顯示一範例性箝夾準備單元的操作，其可與圖9或10的基板處置及曝光配置一起使用。
在這些圖形中，至少功能上對應的結構部位係以相同的元件符號加以標示。
以下，僅藉由範例方式參考附圖而說明本發明的不同實施例。
圖1概略顯示一毛細液體(例如：水)的毛細液體層1，其介於一第一基板2(例如：晶圓)及一第二基板3(例如：基板支撐結構，類似一晶圓台)之間。第一基板2及第二基板3分別具有大致平坦的表面5與6，第一基板2及第二基板3的相向表面5與6之間的標稱距離被定義成高度h。毛細液體層1具有一外液體表面8，此外液體表面8由於液體黏著於第一基板2及第二基板3的緣故而呈現凹面狀。
假如第一基板2及第二基板3受到來自大致垂直於相向表面5與6的方向上之力量時，凹面狀的液體表面8傾向維持其本身形狀。外液體表面8的凹陷取決於毛細層1與第一基板2的表面5之間的接觸角、及毛細層1與第二基板3的表面6之間的接觸角。個別的接觸角取決於毛細層1中所使用的液體以及兩個基板2、3的材質特性。關於將具有大致平坦相向表面的二結構固持在一起的毛細層的其他相關詳細內容可參考國際專利申請案第WO2009/011574號，其內容在此提及作為參考。
圖2係概略顯示對利用圖1毛細液體層1所執行的箝制操作穩定性有負面影響的製程之剖面圖。「箝夾」一詞係此後意指利用毛細層1而將基板2箝制至基板支撐結構3上的配置。
假如在液體中具有預先存在的氣泡時，將箝夾引進到真空環 境內會使這些氣泡在毛細層內膨脹擴大。假如周圍的壓力從1bar減少至10-6mbar時，則初始微小的氣泡其尺寸將會膨脹好幾個等級。從圖2可以看出，具有氣泡11尺寸的一氣泡可能會嚴重影響箝制強度，至少局部影響箝制強度，且可能對箝夾的穩定度產生負面影響。
可能使箝夾不穩定的另一項機制為自然形成的空隙(void)，這些空隙例如是由於毛細液體層中的氣穴或溶解的氣體沉澱所引起的，這樣的空隙例如像圖2中以元件符號13所標示的空隙。假如箝夾被帶入真空環境下，則氣穴現象所形成的空隙將會以類似上述預先存在的氣泡之方式長大，所產生的空隙對箝夾的穩定性具有負面影響。
除因為存在氣泡及/或空隙而降低箝夾的穩定性外，箝夾穩定性也可能受到毛細層介面的液體蒸發(亦即在凹面狀的液體表面處之蒸發現象)所影響。圖2概略顯示這類蒸發的影響。由於蒸發緣故，外液體表面8的位置已經偏移至一個新的位置，以形成外液體表面8’。由於偏移緣故，導致毛細層所覆蓋的表面積減少，因而降低箝夾的穩定性。
圖3A及圖3B分別為依據本發明第一實施例用以支撐基板的基板支撐結構23之剖面圖與俯視圖。支撐結構被建構成利用毛細層21而箝制一基板22，基板支撐結構23的表面26設有帶著粒結(burl)形式的複數個接觸元件27。基板支撐結構23另外包含一密封結構29及一液體移除系統。
除利用粒結作為接觸元件27外，複數個間隔物(例如：玻璃顆粒、SiO2顆粒或類似物等)也可均勻分配於基板支撐結構23的表面26上。存在有類似粒結的接觸元件27可以減少顆粒對基板22底面的污染之影 響。而且，接觸元件27之目的是藉由承受毛細層的箝制力而使基板22保持大致平坦，以防止基板彎曲。
接觸元件27的最大間距取決於毛細層的箝制力在相鄰接觸元件之間所引起的基板最大撓曲之要求設定，每一個接觸元件的接觸表面在所施加的箝制壓力下足以承受變形及/或破壞。較佳地，接觸元件27的邊緣被製作成渾圓狀以減少例如清潔操作期間遭受顆粒污染的可能。具有圓形接觸面的粒結27直徑之典型值介於10至500微米之間，這些粒結27的間距之典型值可能介於1至5毫米之間的範圍內。
接觸元件的標稱高度決定基板22與基板支撐結構23的表面26之間的距離，因此可決定箝制壓力。可供修改以獲得所欲箝制壓力之其他參數包括：基板22材料特性、基板支撐結構23的表面26材料特性、表面26表面積、接觸元件形狀、接觸元件間距、及形成毛細層21所用液體種類。
密封結構29圍繞基板支撐結構23的表面26而正對著欲箝制的基板22，密封結構29可以限制從毛細層21蒸發出來的液體外漏，較佳地，密封結構29的頂面其高度對應於複數個粒結27的標稱高度。這樣的配置能增加防止蒸氣外漏的效率，這一點在真空環境下特別重要。
密封結構29可以包含一或多個彈性變形元件，例如氟矽橡膠(viton)或橡膠所製成的O環。這類的O環可以利用縮減的高度而插入一部份的基板支撐結構23內，致使O環的頂面被放置到上述高度。O環在徑向側邊(例如：正對著基板支撐結構23的中心的徑向側邊)可以設有一切口，致使O環可以被擠壓於基板支撐結構23與基板22之間，而不需要過 度的力量要求，卻足以防止蒸氣外漏。
作為另一替代方式，如圖3A所示，密封結構29可包含一蒸氣限制環，此蒸氣限制環由基板支撐結構23的外緣支撐。蒸氣限制環關閉正對毛細液體表面的周緣開口，只在蒸氣限制環與基板22之間留下極小垂直距離，其中基板22由基板支撐結構23的表面26上的複數個粒結27支撐。
液體移除系統被建構成能夠移除基板底面的液體，以形成一毛細層21。利用液體移除系統而形成毛細層21的其他細節，將於稍後參考圖7而詳細說明。
液體移除系統被建構成能夠從基板支撐結構23的表面26移除過多水分。在圖3A中，液體移除系統包含一氣體分布系統，其一實施例係局部顯示於圖3B中。氣體分布系統可以包含在表面26周緣的一槽溝31、允許氣體進入槽溝31的一或多個氣體入口33、以及將氣體從槽溝31移出的一或多個氣體出口35。假如存在有密封結構29，可以在設有液體層的表面26及密封結構29之間產生一氣流，因此形成圖3B中虛線箭頭所顯示的一通道。
可沿著槽溝31以對稱方式設置一或多個氣體入口33及一或多個氣體出口35。在圖3B實施例中設有二個氣體入口33及二個氣體出口35。氣體入口33及氣體出口35定位成使得連接此二氣體入口33所形成的第一虛擬線37及連接此二氣體出口35所形成的第二虛擬線39大致相互垂直。
圖3A所顯示的基板支撐結構23另外包含一液體儲存槽 41。此液體儲存槽41被建構成能夠容置一定體積的液體(例如水)，且能夠儲存該液體的蒸氣。而且，液體儲存槽被配置成能夠透過一或多個通道43而提供蒸氣到毛細層21，此儲存槽可以被稱之為液體儲存槽41。較佳地，液體儲存槽41中的液體(儲存槽液體)等於毛細層21中的液體(毛細液體)。適用於儲存槽液體及毛細液體的液體可以是水。
液體儲存槽的存在可提供更減少液體從毛細層21蒸發之方式，儲存槽內的液體之自由表面積較佳大於毛細層21的凹面狀外表面28之自由表面積。儲存槽內儲存的液體之較大自由表面積能確保獲得足夠的蒸氣量，而增加表面28的環境中之水氣，藉此使毛細層21內產生較少的蒸發。
蒸氣可以藉由一或多個氣體入口33及/或一或多個氣體出口35而從液體儲存槽41朝向毛細層21的外液體表面28傳送。在此情形中，在氣體分布系統內所使用的氣體可以透過一閥體45而被提供至基板支撐結構，此閥體45亦被用來提供液體至液體儲存槽41。
作為另一替代方式，可以透過一或多個分開的氣體連接單元而提供氣體。假如這類的氣體連接單元被建構成能夠透過提供蒸氣到毛細層的一或多個通道43而產生氣流，則此一或多個通道43可以設有一流動控制單元44。這樣的流動控制單元44被建構成透過氣體連接單元而將氣流與來自儲存槽41的蒸氣分開。
在另一替代實施例中，氣體分布系統整個與一或多個元件分開，以將來自蒸氣儲存槽41的蒸氣提供至箝夾上。
如先前參考圖2所述，這一層的毛細液體在真空環境下蒸發 掉。實驗結果已證實毛細液體層的剩餘體積傾向累積在箝夾的一側上。由於毛細層的不對稱分布，基板一側會從基板台上「剝落」下來。稍後，將說明基板剝落影響。
圖4概略顯示基板剝落的概念。不希望被其理論所限制，相信由於無法避免的隨機不穩定性，基板22的邊緣在比較沒有被強力箝制的位置上開始從基板支撐結構23上升。此上升的動作概略顯示於圖4的箭頭47。由於剝落的緣故，蒸氣可能更容易從毛細層21外漏出去。此外，毛細層21的外液體表面28會增加而導致蒸發速率隨之增加。而且，局部剝落會使毛細層21從發生剝落的區域產生偏移，如此導致更進一步的鬆脫。因此，局部剝落可能會顯著限制箝夾的壽命。
圖5是依據本發明第二實施例支撐基板22的基板支撐結構23之剖面圖。圖5的基板支撐結構23之實施例更包含一周圍框邊51，此周圍框邊51在基板支撐結構23與基板22之間產生較小的距離。雖然基板支撐結構23與基板22之間的標稱距離在圖1及圖2中被稱之為高度h，一般大約介於3至10微米之間，但是周圍框邊51與基板22之間的距離一般係介於500奈米到1.5微米之間的範圍內。較佳地，周圍框邊51的高度小於1微米，且小於基板支撐結構23的表面26上所設置的接觸元件之標稱高度。
不希望被理論所限制，周圍框邊51被認為以圖6A至6C所述方式而限制基板剝落，其中圖6A至6C為設有毛細層的基板支撐結構之俯視圖。雖然已藉由參考圖5說明周圍框邊51，但是周圍框邊51的用途並未侷限於此實施例。例如，周圍框邊51也可以被應用於圖3A所顯示的實 施例、及國際專利申請案第WO2009/011574號所述之實施例中。
首先，當液體從外毛細表面28蒸發時，它會退入周圍框邊51與基板22之間的小間隙內。由於蒸發不均勻的緣故，外毛細表面28可以如圖6A圖所示更進一步朝內縮回。在周圍框邊51與基板22之間的較小間隙上之毛細壓力暴增，會比主要箝制區內的壓力暴增更大，例如大約1bar比大約200mbar。當由於蒸發的緣故而使外毛細表面28到達周圍框邊51的內側表面時，此表面會遇到基板22與基板支撐結構23之間較大的距離。在此區域中較小的毛細壓力暴增，會使少量液體流入周圍框邊51與基板22之間的間隙內，這一點如圖6B圖所示。液體持續流動，直到周圍框邊51與基板22之間的間隙如圖6C圖所示被完全填滿為止。在主要箝制區內可能會留下一空隙，此空隙整個被一液體層所包圍。有效地，由於蒸發的緣故而損失的毛細箝制區域已經朝內移動。外毛細表面仍然處於相同位置，因此，基板邊緣將不會剝落。
類似於圖3A及5的基板支撐結構23之實施例，可被設計成使氣穴效應降至最低或完全不存在。不希望被理論所限制，可理解凹穴具有臨界半徑。假如凹穴半徑比其臨界半徑更大，則凹穴將更廣泛成長擴大。藉由利用一基板支撐結構，其能夠形成具有最小尺寸(亦即：厚度h)的毛細層，而此厚度極小且最好小於臨界半徑，則氣穴現象可被大幅限制住或完全不會發生。實驗結果已經顯示具有3至10微米範圍內的厚度h之水毛細層不會產生氣穴現象。
作為特定的測量結果，基板11與基板支撐結構23的一個或二個接觸表面可施以表面處理，或者塗有能影響接觸角的材料，此接觸角 係介於形成毛細層21的液體與相關的接觸表面之間。
圖7A至7J概略顯示依據本發明實施例用以將基板箝制於基板支撐結構的表面上之方法，此方法可以在一箝夾準備單元中實行，此箝夾準備單元可以允許將基板箝制於基板支撐結構的方法達到自動化。
箝夾準備單元包含一真空系統，其能夠提供一控制好的壓力環境。而且，箝夾準備單元包含：用於施加液體的一液體分配單元、用於供應和移除氣體的一或多個氣體連接單元、及用於供應和移除液體的一或多個液體連接單元。
如圖7A圖所示，首先，基板支撐結構23係放置於一真空腔內，例如在箝夾準備單元的真空系統內的一外殼中。在將基板支撐結構23放置到真空腔內之後，如圖7B所示，將液體施加到其一表面26上。可以藉由液體分配單元61而施加液體到基板支撐結構23的表面26上。
在圖7A至7J中，基板支撐結構23的表面26設有複數個接觸元件(例如：粒結27)。在一實施例中，施加液體的步驟至少持續到接觸元件被一液體層64覆蓋為止。在施加液體之後，液體層64的典型厚度係介於2至5毫米的範圍之間。較佳地，施加液體的步驟是在大致等於液體層64中的液體的蒸氣壓力之壓力程度下執行。在這樣的壓力下施加液體能減少氣體溶解及/或氣泡陷入液體內之機率。
選擇性地，在施加液體之後，執行一暫停動作，此動作概略地顯示於圖7C中。此暫停動作允許溶解的氣體及/或陷入的氣泡62擴散到液體層64外。移除溶解的氣體及/或陷入的氣泡62可以減少形成空隙的機會，這一點與先前參考圖2所述相同。
然後，基板22被放置在液體層64的頂面。較佳地，如圖7D所示，基板被放置成能夠使基板22的一端部22a首先以一初始角度(以下稱之為傾斜角)接觸液體層64。在第一次接觸之後，如圖7E所示，基板22的未接觸端部22b下降到基板22完全擱置於液體層64上為止。
在圖7D中，基板22係以一初始角度α放置，液體接觸基板22的底面且因為毛細作用的緣故而附著於此底面上。在一實施例中，在基板22的一端部22a的第一次接觸之後，基板22的另一端部22b下降而使得水與基板之間的接觸線沿著基板22的底表面以另一端部22b的方向移動(如圖7D中箭頭所示朝向右邊移動)。以傾斜角放置基板22能降低空氣或氣體被捕捉於基板22與基板支撐結構23之間的機率，如此可增進欲產生的箝夾之穩定性。傾斜角(α)是一銳角，較佳小於10度且較佳大於5度。實驗結果已經顯示出這樣的傾斜角能產生令人滿意的效果。
圖7E顯示放置於液體層64上之後的基板22，此基板22飄浮於液體層64上。
在將基板放置於液體層頂面上之後，移除過多的液體。移除過多液體的步驟可以包含降低基板22底面的壓力，使其到達大致低於基板支撐結構23周圍的壓力之壓力程度。可以藉由將基板22底面的區域連接到一低壓環境而達成上述的減壓效果，這一點如圖7F中箭頭65所示。
由於液體層64上方的壓力程度及液體層64下方的壓力程度之間的差異，基板22被拉向基板支撐結構23。結果，過多液體透過一或多個通道66(例如：圖3B中所示氣體分布系統之通道33與35)被吸走及/或如圖7F中箭頭67所示被擠壓出基板支撐結構23的邊緣。經過一段時間後， 基板22則擱置於基板支撐結構22的表面26的接觸元件27上。
移除過多液體的步驟可以另外或替代地包含沿著表面26的周緣提供氣流的步驟：以低於基板22上方的壓力而提供此氣流，致使基板22能夠維持與接觸元件的接觸。氣流中所適用的氣體包括氮氣、氧氣與氦氣。
氣流可利用一或更多方式移除掉過多的液體，例如液體可以被氣流刮除。此外，剩下的液滴可以在氣流中蒸發掉，可藉由提供去濕或「乾燥」的氣體(亦即，具有小於本身蒸氣飽和值50%蒸氣含量的氣體，較佳地小於本身蒸氣飽和值10%蒸氣含量的氣體)而增強蒸發剩餘的液滴。
提供氣流的步驟概略地顯示於圖7G及7H中。氣體透過通道66a而進入基板支撐結構23內，同時氣體透過通道66b而離開。通道66a與66b可以分別對應於圖3B中的氣體入口33與氣體出口35。較佳地，維持此氣流直到形成一毛細層71為止，亦即具有凹面狀外表面28的液體薄層其壓力低於周邊環境的壓力為止。這樣的毛細層已經參考圖1及圖2而描述。
在由於移除過多液體而形成毛細層後，可降低周圍壓力。為確保仍舊箝制基板22，假如存在有過多氣體，如圖7I所示，過多氣體可透過閥體45而從基板22下方移除。
在本發明的實施例中，在形成毛細層71之後，可以提供蒸氣到毛細層上。可以藉由至少局部填滿儲存槽液體77的一儲存槽75而提供蒸氣73，如圖7I及7J所示，儲存槽75可以是基板支撐結構23的一部份。作為另一替代方式，儲存槽75可以是一外部儲存槽，然後透過連接到 外部儲存槽及基板支撐結構23的一個轉運系統而提供蒸氣73。
必須知道液體蒸氣儲存槽75可被設置成一個單獨分開的模組，以連接到基板支撐結構23。所提供蒸氣可限制液體從毛細層71的蒸發，如此可能使箝夾有較長的壽命。
圖8概略顯示本發明第三實施例的基板支撐結構83之俯視圖，此基板支撐結構83包含用於箝制基板的一表面86。較佳地，此表面86設有多個接觸元件87。此外，基板支撐結構包含一氣體分布系統，其包括：一槽溝91、多個氣體入口93、及多個氣體出口95。這些零件的功能已經在圖3A中提及，且同樣運用於本實施例中。基板支撐結構83可以類似方式運用於圖7A至7J中的基板支撐結構23所描述之箝制方法上。
相較於圖3A所顯示的基板支撐結構23之實施例，基板支撐結構83包含一表面86，此表面86被分割成複數個子表面(sub-surface)，這些子表面具有瓷磚的形式(例如：呈六角形)，且可以被配置成棋盤格狀的圖案。每一個瓷磚可以設有一周圍框邊(未顯示)，類似於參考圖5所述的周圍框邊51。假如需要箝制相當大的基板時(例如：300毫米的晶圓)，使用被分割成複數個子表面的一表面86可能較為有利。
為了便於說明，圖8B顯示圖8A的基板支撐結構83及基板82的組合所形成的一箝夾之剖面圖。
圖9與10顯示不同的基板處置及曝光配置，其可與上述基板支撐結構一起使用。雖然圖9與10提及以微影技術處理晶圓的範例，但要知道上述配置並未於侷限於這樣的一種應用情形而已。圖11顯示一箝夾準備單元，其可以用於將基板自動箝制至基板支撐結構上(如圖7A至7J所 示)。
現在，參考圖9，在基板處置及曝光配置中，使用一箝夾準備單元112而使晶圓箝制到晶圓支撐結構上的方法得以自動化。箝夾準備單元112從基板分配設備(在此範例中為一個所謂的晶圓軌道111)而接收到一個欲箝制的晶圓。在箝夾準備單元112中，可利用圖7A至7J所述的方法而準備箝夾。在準備好箝夾之後，箝夾前進到一基板處理單元(在本範例中為一微影設備113)。此微影設備可以包含：一輻射系統，用以提供具有圖案的輻射光束；一基板支撐結構，用以支撐一基板；以及一光學系統，用以將該具有圖案的輻射光束投影至基板的一目標部位上，這一點是熟習此項技藝者所熟知的。關於箝夾準備單元的操作之其他細節，將參考圖11A至11D加以敘述。
在圖9中，箝制過程係以元件符號115標示。關於箝夾準備單元的操作之其他細節將參考圖11A至11D加以敘述。箝夾準備單元112包含一真空系統，用以提供控制好的壓力環境。箝制過程可以從晶圓122引進到箝夾準備單元112的真空系統內開始，例如可藉由具有圖11A圖所示的晶圓支架121之機械手臂而達成。
可以透過一真空密封門或承載閉鎖室而引進晶圓122，晶圓支撐結構123可早已存在於箝夾準備單元112內。作為另一替代方式，可以利用類似於晶圓122的方式而引進晶圓支撐結構123。
然後，可以藉由如圖11A圖所示的液體分配單元124，而將液體施加於晶圓支撐結構123的表面上。液體分配單元124提供一液體流，直到產生具有足夠厚度的液體層為止，之後就關掉液體流。較佳地，液體 分配單元124可以在箝夾準備單元112內移動，致使能夠以有效方式執行液體的施加，而不需要在箝制過程中妨礙較早與稍後的動作。較佳地，在施加液體於基板支撐結構123的表面上之期間，箝夾準備單元112上的壓力低於周圍壓力，例如大致等於液體層中的液體之蒸氣壓力。作為另一替代方式，在施加液體之後但在箝制晶圓之前，減少箝夾準備單元112中的壓力。
然後，晶圓122及晶圓支撐結構123彼此相對移動，以允許將晶圓122放置於液體層125上。為此，藉由一基板傳送單元(例如，圖11B中所示的移動式支撐桿127)，將晶圓122下降至液體層125上。如先前參考圖7D所示，晶圓122與液體層125之間的第一次接觸可以是一初始傾斜角(α)，較佳地為小於10度且較佳地大於5度。可以藉由在降低晶圓122的一邊之前，降低晶圓122的另一邊，而達成上述傾斜的放置，例如藉由支撐桿127的個別控制移動。晶圓122的每一邊均下降，直到接觸液體層125為止。然後，支撐桿127可以進一步降低而離開。可以在周圍壓力(例如，大約1bar)下將晶圓122放置在液體層125上。然而，最好在低壓下實施晶圓放置，例如大致等於液體層中的液體之蒸氣壓力。
現在，晶圓支撐結構123可以連接到一或多個液體連接單元，這些液體連接單元可以連接到晶圓支撐結構123，以便將液體從晶圓支撐結構中移出。在一實施例中，可以使用圖11C所示的連接器126a與126b。作為另一替代方式，早就已經連接此一或多個液體連接單元，透過此一或多個液體連接單元，可以移除過多液體，此液體移除過程可以在周圍壓力(例如：大約1bar)下實施。
而且，晶圓支撐結構123可以包含一或多個氣體連接單元，用以將晶圓支撐結構123連接到一氣體供應源，例如可以使用圖11C所示的連接器126a與126b，這些氣體連接單元可以藉由連接到真空而產生低壓。額外地或作為另一替代方式，氣體連接單元可以提供一氣流，以便在晶圓122與晶圓支撐結構123之間形成一毛細層，這一點如先前參考圖7A至7J所述。可以在周圍壓力(例如：大約1bar)下供應氣流。要知道的是氣流所提供的壓力必須小於周圍壓力，以確保晶圓122能夠保持本身與晶圓支撐結構123之間的相對位置。
在使箝夾前進到微影設備113之前，如圖11D所示，移除掉連接部位126a與126b。可以透過一真空緊密門或承載閉鎖室並藉由機械手臂而執行箝夾的前進。
在微影設備113中處理完畢之後，箝夾可以被傳送回到箝夾準備單元112或一個分開的鬆開單元上，亦即將晶圓從晶圓支撐結構上移除。在圖9中係以元件符號116概略地顯示此鬆開過程。可以藉由將箝夾引進到箝夾準備單元112內，並將一或多個液體連接器連接到晶圓支撐結構123上，而執行此鬆開過程。透過此一或多個液體連接器，可以將額外的液體供應至毛細液體層，以增加液體層的厚度。可以添加額外的液體，致使晶圓122開始飄浮於液體層的頂面。以液體壓力大致均勻分布的方式來引進額外液體，致使晶圓122不會變形或破裂。
在此階段下，例如藉由支撐桿127，晶圓122可以從液體層抬起而到達晶圓基板支撐表面123。晶圓可以一初始傾斜角而抬起，此過程是運用與上述將晶圓放置到液體層上的相反過程而實施。較佳地，在晶圓 上升過程期間的初始傾斜角係小於10度，且較佳地大於5度，這一點可以藉由分開控制支撐桿的動作而先抬起晶圓的一邊，然後抬起晶圓的另一邊而達成。最後，例如藉由設有晶圓支架121的機械手臂，晶圓122可以從箝夾準備單元112中取出，且朝向晶圓軌道111傳送。
在圖9中，箝夾準備單元112及微影設備113被描繪成分開單元。然而，要知道也可例如藉由將箝夾準備單元112的必要功能性包含在微影設備113的一承載閉鎖室內，而將箝夾準備單元112整合到微影設備113內。在此情形中，當晶圓分別進出微影設備時，晶圓會被箝制與鬆開。
圖10概略顯示另一個不同的基板處置及曝光配置，其可以與基板支撐結構的實施例一起使用。在圖10的配置情形中，除了單個微影設備113之外，還可以使用更多的微影設備113a、113b與113c。晶圓軌道111及箝夾準備單元112的功能性係如同參考圖9所述。
在圖10中，已經準備好要傳送至微影設備內進行處理的一箝夾，可以透過額外的晶圓軌道117而運往不同的微影設備113a、113b與113c。假如欲在箝夾準備單元112內執行箝制方法的耗費期間比在任何一個微影設備113a、113b與113c內執行微影處理的耗費期間更快，圖10的結構會更加有效。
經由上述說明，已經提及「毛細層」，要知道的是「毛細層」此一用語係指薄薄的一層液體，其具有凹面新月狀且壓力小於周圍壓力。
本發明其他型態進一步界定於一基板支撐結構，以將基板箝制在基板支撐結構的一表面上，其中基板支撐結構包含：一表面，用以接 受被液體毛細層所箝制的一基板；一液體儲存槽，用於儲存儲存槽液體及該儲存槽液體的蒸氣；以及一蒸氣傳送系統，用以連接儲存槽與該接受表面，致使可將儲存槽液體的蒸氣供應至毛細層。儲存槽可延伸於接收表面底下，儲存槽較佳包含一凹穴，此凹穴在接收表面底下具有一較大部位，而在接收表面周緣處朝外延伸有一較小部位。在儲存槽中所儲存的儲存槽液體之體積可大於液體毛細層的體積。儲存槽可從接收表面拆卸下來。使用時，毛細層可具有一凹面狀外表面，而且在儲存槽中的液體之自由表面積係大於該凹面狀外表面的自由表面積。基板支撐結構可另外包含一氣體移除系統以移除該表面周緣的液體，此氣體移除系統可包含一氣體分布系統。此氣體分布系統包含：用以供應氣體的至少一氣體入口，及用以移除氣體的至少一氣體出口。作為另一替代方式，氣體分布系統可具有複數個氣體入口及複數個氣體出口，彼此之間具有等距離的位置。基板支撐結構可另外包含一氣體連接單元以連接基板支撐結構與一氣體供應源。氣體連接單元可連接到蒸氣傳送系統，此蒸氣傳送系統可包含一流動控制單元，用以透過氣體連接單元將氣流與來自儲存槽的蒸氣分開。流動控制單元可以是一閥體或蓋體。基板支撐結構的儲存槽可位於基板支撐結構的一個可移除部位上，儲存槽及蒸氣傳送系統可位於基板支撐結構的一可移除部位上。基板支撐結構可另外包含一密封結構，其圍繞該接受表面致使氣體分布系統所提供的氣體可流入接受表面與密封結構之間。接受表面可設有複數個接觸元件，且其中密封結構的高度對應於接觸元件的高度。作為另一替代方式，接受表面可另外包含一隆起周圍框邊，致使氣體分布系統所提供的氣體可流入此周圍框邊與密封結構之間。在此一實施例中，接受表面 可設有複數個接觸元件，且其中周圍框邊的高度小於複數個接觸元件的高度。接受表面可被分割成複數個子表面。然後，液體移除系統可被建構以移除每一個子表面周緣的液體。在具有複數個子表面的情形中，至少一子表面可具有大致呈六角形的形狀。
本發明另一型態係界定一種方法，用以使基板維持被箝制到基板支撐結構上，其中此方法包含以下步驟：設置一基板支撐結構，其具有一表面，在此表面上已經藉由毛細層而箝制有一基板；提供一儲存槽，用以儲存該儲存槽液體及該儲存槽液體的蒸氣；以及將該儲存槽液體的蒸氣從儲存槽傳送至毛細層，以限制從毛細層蒸發出去。基板支撐結構可以是先前所描述的任何基板支撐結構。
雖然已經藉由上述較佳實施例而說明本發明，但可想而知對於熟習此項技術者來說，可以對上述實施例構思出不同的修改與替換。因此，上述特定實施例僅作為範例之用，而並非用以侷限本發明的範圍，本發明的範圍應該由以下的「申請專利範圍」界定才是。
22‧‧‧基板
23‧‧‧基板支撐結構
66a,66b‧‧‧通道

Claims (18)

  1. 一種基板處置和曝光的配置，其包括：複數個微影設備(113A、113B、113C)；一箝夾準備單元(112)，用於箝制在一晶圓支撐結構(123)上的一晶圓；一晶圓軌道(111)，其中該箝夾準備單元係組構用於接收來自該晶圓軌道的晶圓；以及一額外晶圓軌道(117)，其係用於朝向該複數個微影設備傳送該箝夾。
  2. 如申請專利範圍第1項之配置，其中每一個微影設備包括：一輻射系統，用以提供一具有圖案的輻射光束；以及一光學系統，用以將該具有圖案的輻射光束投影到該晶圓的目標部位上。
  3. 如申請專利範圍第1項之配置，其中該箝夾準備單元包括一真空系統，用於提供一受控制的壓力環境。
  4. 如申請專利範圍第3項之配置，其進一步包括配備有一晶圓支架(121)的一機械手臂，用於將該晶圓(122)引進到該箝夾準備單元的該真空系統內。
  5. 如申請專利範圍第3或4項之配置，其包括一真空密封門或一承載閉鎖室，用於將該晶圓引進到該箝夾準備單元內。
  6. 如申請專利範圍第1至4項中任一項之配置，其包括一第二機械手臂和一第二真空密封門或一承載閉鎖室，用於使該箝夾前進，包括將箝制於該晶圓支撐結構的該晶圓前進到該微影設備。
  7. 如申請專利範圍第1至4項中任一項之配置，其中該箝夾準備單元係進一步組構用以將該晶圓自該晶圓支撐結構處移除。
  8. 如申請專利範圍第1至4項中任一項之配置，包括一分開的鬆開單元，用以將該晶圓自該晶圓支撐結構處移除。
  9. 如申請專利範圍第1、2、3項中任一項之配置，其中該箝夾準備單元包括用於供應和移除氣體的一或多個氣體連接單元，以及用於提供和移除液體的一或多個液體連接單元，並且其中該晶圓支撐結構(123)包括一或多個連接器(126A、126B)，用於連接到該一或多個氣體連接單元或該一或多個液體連接單元。
  10. 如申請專利範圍第1、2、3項中任一項之配置，其中該箝夾準備單元包括一液體分配單元(124)，用於將液體施加於該晶圓支撐結構的表面上，且其中該晶圓支撐結構(123)包括一基板傳送單元，該基板傳送單元係用於在將該晶圓下降到形成於該晶圓支撐結構的表面上的液體層，並且係用於將該晶圓從該液體層抬起而到達該晶圓基板支撐表面(123)上，其中該基板傳送單元包括複數個個別控制的移動式支撐桿(127)。
  11. 一種處置和處理基板的方法，包括：提供一箝夾準備單元，該箝夾準備單元接收來自一晶圓軌道(111)之待箝制的晶圓；準備在該箝夾準備單元(112)中的箝夾；將已箝制的該晶圓前進到複數個微影設備(113A、113B、113C)中的一者； 處理該微影設備中的該晶圓；將該箝夾傳送回到該箝夾準備單元或一分開的鬆開單元；鬆開該晶圓；從該箝夾準備單元取出該晶圓；以及朝向該晶圓軌道(111)傳送該晶圓(122)。
  12. 如申請專利範圍第11項之方法，其中該晶圓係藉由配備有一晶圓支架(121)的一機械手臂引進到該箝夾準備單元(112)的真空系統內。
  13. 如申請專利範圍第11或12項之方法，其中該晶圓係藉由一真空密封門或一承載閉鎖室引進到該箝夾準備單元(112)的真空系統內。
  14. 如申請專利範圍第11或12項之方法，其中該晶圓支撐結構(123)已存在於該箝夾準備單元中。
  15. 如申請專利範圍第11或12項之方法，其中該晶圓支撐結構係以類似該晶圓的方式被引進到該箝夾準備單元內。
  16. 如申請專利範圍第11或12項之方法，其進一步包括：藉由一液體分配單元(124)將液體施加到該晶圓支撐結構(123)的表面上；將該晶圓(122)和該晶圓支撐結構(123)相對於彼此進行移動；以及隨後藉由一基板傳送單元將該晶圓(122)降低到液體層(125)上，該基板傳送單元包括複數個個別控制的移動式支撐桿(127)。
  17. 如申請專利範圍第11項之方法，其進一步包括：藉由使用配備有一晶圓支架(121)的一機械手臂從該箝夾準備單元(112)取出該晶圓(122)， 並且朝向該晶圓軌道(111)將該晶圓傳送回來。
  18. 如申請專利範圍第11項之方法，其中該箝夾準備單元所執行的拑制方法的持續時間係比在該微影設備中的一者所執行的微影製程的持續時間更短。
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