CN102422385A - 箝制基板的方法及箝夹准备单元 - Google Patents
箝制基板的方法及箝夹准备单元 Download PDFInfo
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- CN102422385A CN102422385A CN2010800178663A CN201080017866A CN102422385A CN 102422385 A CN102422385 A CN 102422385A CN 2010800178663 A CN2010800178663 A CN 2010800178663A CN 201080017866 A CN201080017866 A CN 201080017866A CN 102422385 A CN102422385 A CN 102422385A
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- 239000000758 substrate Substances 0.000 title claims abstract description 373
- 238000000034 method Methods 0.000 title claims abstract description 85
- 239000007788 liquid Substances 0.000 claims abstract description 268
- 239000007789 gas Substances 0.000 claims description 107
- 206010003497 Asphyxia Diseases 0.000 claims description 78
- 210000000080 chela (arthropods) Anatomy 0.000 claims description 77
- 238000010276 construction Methods 0.000 claims description 22
- 238000005530 etching Methods 0.000 claims description 20
- 230000008020 evaporation Effects 0.000 claims description 17
- 238000001704 evaporation Methods 0.000 claims description 17
- 238000000429 assembly Methods 0.000 claims description 16
- 230000000712 assembly Effects 0.000 claims description 16
- 239000002245 particle Substances 0.000 claims description 14
- 230000005855 radiation Effects 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 230000001154 acute effect Effects 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 229920006395 saturated elastomer Polymers 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 4
- 239000007791 liquid phase Substances 0.000 claims description 2
- 230000008569 process Effects 0.000 description 11
- 230000000694 effects Effects 0.000 description 9
- 230000009471 action Effects 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229920002449 FKM Polymers 0.000 description 1
- 241000446313 Lamella Species 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- GOLXNESZZPUPJE-UHFFFAOYSA-N spiromesifen Chemical compound CC1=CC(C)=CC(C)=C1C(C(O1)=O)=C(OC(=O)CC(C)(C)C)C11CCCC1 GOLXNESZZPUPJE-UHFFFAOYSA-N 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67706—Mechanical details, e.g. roller, belt
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67724—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations by means of a cart or a vehicule
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49815—Disassembling
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49998—Work holding
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/53—Means to assemble or disassemble
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- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Robotics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Electron Beam Exposure (AREA)
Abstract
本发明涉及一种将基板(22)箝制于基板支撑结构(23)的表面上的方法。首先,将液体施加于该基板支撑结构的表面上。该表面设有多个接触组件。所施加的液体使得接触组件被液体层所完全覆盖。接着,提供所述基板并将所述基板放置于所述液体层上。最后,从所述基板下移除液体,使得所述基板搁置于多个接触组件上且被所述基板与所述基板支撑结构的表面之间的液体的毛细层所施加的毛细箝制力所箝制。
Description
技术领域
本发明涉及一种用于将基板箝制于基板支撑结构的表面上的方法,一种被设置成将基板箝制于基板支撑结构上的箝夹准备单元,以及一种包括所述箝夹准备单元的光刻系统。
背景技术
将诸如晶圆的基板箝制到诸如晶圆台的基板支撑结构的表面上在半导体产业中特别是在光刻(lithography)系统中早为已知。在这样的光刻系统中,通过入射的光子或诸如离子和/或电子等带电粒子,而使被箝制的基板产生图案。箝制步骤能确保基板表面的目标部位产生高度精确的图案。优选地,不仅在曝光期间要使用箝制步骤进行位置控制,而且在输送基板期间也要利用箝制步骤,例如将基板插入光刻系统的曝光室内和/或从该处移除。
可通过吸走基板与基板支撑结构之间的空气,亦即在两者之间产生真空,而达到箝制效果。然而,假如在真空环境下需要上述位置控制,这样的箝制机构并不会产生作用。因此,就产生出许多不同的解决方案以便在真空环境内箝制基板,例如通过电子机械式箝制的方式而箝制基板。应该明白,这样的方案并不适用于与例如电子和/或离子等带电粒子构成的的一条或多条光束一起使用。
本案申请人所申请之国际专利申请案第WO2009/011574号公开了一种光刻系统,其具有利用一层静止液体(以下称之为毛细层)箝制基板的基板支撑结构。毛细层的厚度能够使基板表面与基板支撑结构的表面之间产生一压力降。如WO2009/011574所述,此液体一边黏着于基板表面而另一边黏着于基板支撑结构,如此一来使液体表面产生圆周方向的延伸,且在此二表面之间以凹面方式延伸。即使施力将基板从基板支撑结构的表面移除,如此形成的凹面状液体表面也趋于维持其本身形状。
在一些特殊的情形下,WO2009/011574中所述的基板箝制机构并未以最佳方式进行操作,其原因例如是由于在毛细层中存在有空隙的缘故。而且,由于蒸发过程的缘故,毛细层所存在的时间受到限制。因此,箝制机构仅适用于一部份欲产生图案的装置。
发明内容
本发明的目的是提供一种基板支撑结构,用以通过毛细层而将基板箝制于该基板支撑结构的表面上;此外,本发明还提供一种箝制基板于基板支撑结构的表面上的方法,该方法具有改进的性能。通过提供箝制基板于基板支撑结构的表面上的方法,可以达成上述目的,该方法包括以下步骤:将液体施加于所述基板支撑结构的表面上,所述表面设有多个接触组件,使得所述液体形成覆盖所述接触组件的层;提供所述基板并将所述基板设置于所述液体层上;从所述基板底下移除所述液体的一部份,使得所述基板搁置于所述多个接触组件上并由所述基板与所述基板支撑结构的所述表面之间的所述液体的毛细层所施加的毛细箝制力所箝制。
根据本发明的另一方面,提供一种箝夹准备单元用以箝制一基板,该箝夹准备单元包括:基板支撑结构,其一表面设有多个接触组件;液体分配单元,用于施加液体于该基板支撑结构的表面上,使得所述接触组件被液体层覆盖;基板输送单元,用于将该基板放置于该液体层上;以及液体移除系统,用于从所述基板下方移除一部份的液体,使得所述基板搁置于所述多个接触组件上且被所述基板与该基板支撑结构的表面之间的液体的毛细层所施加的毛细箝制力箝制。
根据本发明的另一方面,提供一种从基板支撑结构上松开基板的方法,其中该基板被所述基板与所述基板支撑结构的表面之间的液体的毛细层施加的毛细箝制力所箝制。该方法包括以下步骤:将额外的液体在所述毛细层的外圆周表面处提供至所述毛细层;以及将所述基板从所述液体抬起。
根据本发明的另一方面,提供松开单元,其包括:基板支撑结构,其表面上通过毛细层而箝制有基板;液体移除系统,其用于在所述毛细层的外圆周表面处提供额外液体至所述基板下方的所述毛细层;和基板输送单元,用于从所述液体层移除所述基板。
根据本发明的另一方面,提供包括光刻设备光刻系统,该光刻设备包括:辐射系统,用以提供具有图案的辐射光束;光学系统,用以将所述具有图案的辐射光束投射至基板的目标部位上;以及箝夹准备单元,用以将所述基板箝制至基板支撑结构的表面上。
很明显地,仍可以其它不同的方式实施本发明的原理。
附图说明
将参考附图所示实施例对本发明的各方面进行说明,其中:
图1是示意性地示出两个结构之间的毛细层的剖面图;
图2是示意性地示出对图1的毛细层的钳夹稳定性具有负面影响的过程的剖面图;
图3A是根据本发明第一实施例的基板支撑结构的剖面图;
图3B是图3A的基板支撑结构之俯视图;
图4示意性地示出基板剥落的概念;
图5是依据本发明第二实施例用以支撑基板的基板支撑结构的剖面图;
图6A至6C是图5的基板支撑结构的俯视图,进一步示意性地示出再次箝制(reclamping)的概念;
图7A至7J示意性地示出执行依据本发明实施例中将基板箝制于基板支撑结构表面上的方法;
图8A示意性地示出依据本发明第三实施例的基板支撑结构的俯视图;
图8B示意性地示出由图8A的基板支撑结构和基板的组合所形成的钳夹的剖面图;
图9示意性地示出基板输送及曝光设备,其可与多个实施例的基板支撑结构一起使用;
图10示意性地示出另一个基板输送及曝光设备,其可与多个实施例的基板支撑结构共同使用;
图11A至11D示意性地示出示例性钳夹准备单元的操作,其可与图9或图10的基板输送及曝光设备共同使用。
在这些附图中,至少功能上对应的结构部件以相同的附图标记加以标示。
具体实施方式
以下,仅参考附图以示例的方式对本发明的实施例进行说明。
图1示意性地示出了诸如水的毛细液体的毛细液体层1,其介于诸如晶圆的第一基板2和第二基板3之间,该第二基板如类似晶圆台的基板支撑结构。第一基板2及第二基板3分别具有大致平坦的表面5与6。第一基板2及第二基板3的相向表面5与6之间的标称距离被定为高度h。毛细液体层1具有外液体表面8,该外液体表面8由于液体黏着于第一基板2和第二基板3的缘故而大致为凹面状。
假如第一基板2和第二基板3受到来自大致垂直于相向表面5与6的方向上的力时,凹面状的液体表面8倾向维持其本身形状。外液体表面8的凹陷取决于毛细层1与第一基板2的表面5之间的接触角,及取决于毛细层1与第二基板3的表面6之间的接触角。各接触角取决于毛细层1中所使用的液体以及两个基板2、3的材质特性。关于将具有大致平坦相向表面的两个结构保持在一起的毛细层的其它相关详细内容可参考国际专利申请第WO2009/011574号,在此结合其内容作为参考。
图2示意性地示出对利用图1的毛细液体层1所执行的箝制操作稳定性有负面影响的处理的剖面图。在下文中,“钳夹”一词指利用毛细层1而将基板2箝制在基板支撑结构3上的配置。
假如在液体中具有预先存在的气泡时,将钳夹引进到真空环境内会使这些气泡在毛细层内膨胀扩大。假如周围的压力减小,如从1bar减小至10-6mbar时,则初始的小气泡的尺寸将会增大几个等级。从图2可看出,具有气泡11尺寸的气泡可严重影响箝制强度,至少局部影响箝制强度,且可能对钳夹的稳定度产生负面影响。
可使钳夹不稳定的另一项机制为自然形成的空隙(void),这些空隙例如是由于毛细液体层中的气穴或溶解的气体沉淀所引起的。这样的空隙的示例如图2中以附图标记13所标示。假如钳夹被置于真空环境下,则气穴现象所形成的空隙将会以与上述预先存在的气泡类似的方式增大。所产生的空隙对钳夹的稳定性具有负面影响。
除因为存在气泡和/或空隙而降低钳夹的稳定性外,钳夹稳定性也会受到毛细层界面处的液体蒸发所影响,即在凹面状的液体表面处的蒸发现象。图2示意性地示出了上述蒸发的影响。由于蒸发的缘故,外液体表面8的位置已经偏移至新的位置以形成外液体表面8’。由于偏移缘故,导致毛细层所覆盖的表面积减小,因而降低钳夹的稳定性。
图3A和图3B分别为根据本发明的第一实施例对基板进行支撑的基板支撑结构23的剖面图和俯视图。支撑结构被配置成通过毛细层21而箝制基板22。基板支撑结构23的表面26设有多个粒结(burl)形式的接触组件27。基板支撑结构23还包括密封结构29和液体移除系统。
除利用粒结作为接触组件27外,也可将多个诸如玻璃颗粒、SiO2颗粒等的间隔物均匀分配于基板支撑结构23的表面26上。类似粒结的接触组件的存在可减少颗粒对基板22的背面的污染影响。此外,接触组件的目的是通过承受毛细层的箝制力而使基板22保持大致平坦,以防止基板弯曲。
接触组件27的最大间距取决于毛细层的箝制力在相邻接触组件之间所引起的基板最大挠曲的要求设定。每个接触组件的接触表面足以承受所施加的箝制压力下的变形和/或破坏。优选地,接触组件27的边缘被倒角以减小如清洁操作期间受到颗粒污染的可能。具有圆形接触面的粒结27的常规直径值在10至500微米的范围内。所述粒结27的常规间距值可在1至5毫米的范围内。
接触组件的标称高度决定基板22与基板支撑结构23的表面26之间的距离,因此可决定箝制压力。可改变以获得所要求的箝制压力的其它参数包括:基板22的材料特性、基板支撑结构23的表面26的材料特性、表面26的表面积、接触组件的形状、接触组件的间距和形成毛细层21所用的液体种类。
密封结构29围绕基板支撑结构23的表面26而面向着将箝制的基板22。密封结构29可限制从毛细层21蒸发的液体的漏损。优选地,密封结构29的顶面其高度对应于多个粒结27的标称高度。这样的配置可提高防止蒸气漏损的效率,这在真空环境下特别重要。
密封结构29可包括一个或多个诸如O型环的可弹性变形的组件,例如氟橡胶(viton)或橡胶所制成的O型环。这类O型环可以缩减的高度而插入基板支撑结构23的一部份内,从而使O型环的顶面被设置在上文所述高度。可在O型环的径向侧设置切口,使O型环可被挤压于基板支撑结构23与基板22之间而不需要过度的力,却足以防止蒸气漏损,所述O型环的径向侧例如面向基板支撑结构23的中心的径向侧。
可选地,如图3A所示,密封结构29可包括蒸气限制环,此蒸气限制环由基板支撑结构23的外缘支撑。该蒸气限制环关闭面向毛细液体表面的周缘开口,只在蒸气限制环与基板22之间留下极小垂直距离,其中基板22由基板支撑结构23的表面26上的多个粒结27支撑。
液体移除系统被设置成能够移除在基板下面的液体,以形成毛细层21。将参考图7对利用液体移除系统形成毛细层21其它细节进行说明。
液体移除系统被设置成能够从基板支撑结构23的表面26移除多余的水分。在图3A中,液体移除系统包括气体分配系统,其实施例系局部示于图3B中。气体分配系统可包括在表面26周缘的槽沟31,允许气体进入槽沟31的一个或多个气体入口33,以及将气体从槽沟31移出的一个或多个气体出口35。如果存在有密封结构29,则可在设有液体层的表面26与密封结构29之间形成气流,从而形成图3B中虚线箭头所示的通道流。
可沿着槽沟31以对称方式设置一个或多个气体入口33及一个或多个气体出口35。在图3B的实施例中设有二个气体入口33及二个气体出口35。气体入口33及气体出口35的位置被设置成使得连接两个气体入口33所形成的第一虚拟线37与连接两个气体出口35所形成的第二虚拟线39彼此大致垂直。
图3A所示的基板支撑结构23还包括液体储存槽41。该液体储存槽41被设置成可容置一定体积的液体,例如水,且还储存该液体的蒸气。此外,该液体储存槽被配置成能够经由一个或多个通道43而向毛细层21提供蒸气。此储存槽可以被称为液体储存槽41。优选地,液体储存槽41中的液体,储存槽液体,与毛细层21中的液体,即毛细液体,相同。适用于储存槽液体及毛细液体的液体可以是水。
液体储存槽的存在提供进一步减少液体从毛细层21蒸发的方式。储存槽内的液体的自由表面积优选大于毛细层21的凹面状外表面28的自由表面积。储存槽内储存的液体的较大自由表面积确保可获得足够的蒸气量,以对表面28的环境加湿,从而在毛细层21内产生较少的蒸发。
蒸气可以通过一个或多个气体入口33和/或一个或多个气体出口35而从液体储存槽41向毛细层21的外液体表面28运送。在此情形中,在气体分配系统内所使用的气体可经由阀体45而被提供至基板支撑结构,该阀体45还用于提供液体至液体储存槽41。
可选地,可经由一个或多个独立的气体连接单元而提供气体。假如所述气体连接单元被设置成经由提供蒸气至毛细层的一个或多个通道43而产生气流,则此一个或多个通道43可以设有流动控制单元44。所述流动控制单元44被设置成将经由气体连接单元的气流与来自储存槽41的蒸气分开。
在另一可选实施例中,气体分配系统整个与一个或多个组件分开,以将来自蒸气储存槽41的蒸气提供至钳夹上。
如上文中参考图2所述,毛细液体层在真空环境下蒸发掉。实验已证实毛细液体层的剩余体积倾向于累积在钳夹的一侧。由于毛细层的不对称分布,基板一侧会从基板台上“剥落”下来。下文中,将说明基板剥落影响。
图4示例性地示出基板剥落的概念。不希望被其理论所限制,相信由于无法避免的随机不稳定性,基板22的边缘在基板22所受箝制力较弱的位置上开始从基板支撑结构23上升。此上升的动作由图4的箭头47示意性地示出。由于剥落的缘故,蒸气可更容易从毛细层21漏出去。此外,毛细层21的外液体表面28会增大,从而导致蒸发速率加快。另外,局部剥落导致毛细层21从发生剥落的区域产生偏移。如此导致更进一步的松脱。因此,局部剥落可极大限制钳夹的寿命。
图5是依据本发明第二实施例的对基板22进行支撑的基板支撑结构23的剖面图。图5的基板支撑结构23的实施例还包括圆周垫环51。该圆周垫环51在基板支撑结构23与基板22之间设置较小的距离。在图1及图2中被称之为高度h的基板支撑结构23与基板22之间的标称距离通常为3至10微米,而圆周垫环51与基板22之间的距离一般在500纳米到1.5微米的范围内。优选地,圆周垫环51的高度小于1微米,且小于基板支撑结构23的表面26上所设置的接触组件的标称高度。
不希望被理论所限制,圆周垫环51被认为以参考图6A至6C所述方式而限制基板剥落,其中图6A至6C为设有毛细层的基板支撑结构的俯视图。尽管已参考图5对圆周垫环51进行说明,然而圆周垫环51的用途并未局限于该实施例。例如,圆周垫环51也可应用于图3A所示的实施例,及国际专利申请第WO2009/011574号中的实施例。
首先,当液体从外毛细表面28蒸发时,会退入圆周垫环51与基板22之间的小间隙内。由于蒸发不均匀的缘故,外毛细表面28可以如图6A所示更进一步朝内缩回。在圆周垫环51与基板22之间的较小间隙上的毛细压力跃变,会比主要箝制区内的压力跃变更大,例如大约1bar比大约200mbar。当由于蒸发的缘故而使外毛细表面28到达圆周垫环51的内侧表面时,此表面会遇到基板22与基板支撑结构23之间较大的距离。在此区域中较小的毛细压力跃变,会使少量液体流入圆周垫环51与基板22之间的间隙内,如图6B所示。液体持续流动,直到圆周垫环51与基板22之间的间隙如图6C所示被完全填满为止。在主要箝制区内可能会留下空隙。此空隙整个被液体层所包围。实际上,由于蒸发的缘故而损失的毛细箝制区域已经朝内移动。外毛细表面仍然处于相同位置。因此,基板边缘将不会剥落。
如图3A和5的基板支撑结构23的实施例,可被设计成使气穴效应降至最低或完全不存在。不希望被理论所限制,可理解凹穴具有临界半径。假如凹穴半径比其临界半径更大,则凹穴将更广泛扩大。通过利用基板支撑结构,可形成具有最小尺寸的毛细层,所述最小尺寸即厚度h,而此厚度很小且优选小于临界半径,则可大幅限制住或完全不会发生气穴现象。实验结果已经显示具有3至10微米的厚度h的水的毛细层不会产生气穴现象。
作为特定的方式,可对基板11与基板支撑结构23的一个或两个接触表面进行表面处理,或者涂覆能影响接触角的材料,该接触角为在形成毛细层21的液体和相关的接触表面之间。
图7A至7J示意性地示出依据本发明实施例用于将基板箝制于基板支撑结构的表面上的方法。该方法可在箝夹准备单元中实行,此箝夹准备单元允许自动化实现基板箝制于基板支撑结构的方法。
箝夹准备单元包括真空系统,其能够提供经控制的压力环境。此外,箝夹准备单元包括:用于施加液体的液体分配单元,用于供应并移除气体的一个或多个气体连接单元,及用于供应并移除液体的一个或多个液体连接单元。
如图7A图所示,首先,将基板支撑结构23设置于真空腔内,例如在箝夹准备单元的真空系统内的壳体中。在将基板支撑结构23放置到真空腔内之后,如图7B所示,将液体施加到其表面26上。可通过液体分配单元61的方式而施加液体到基板支撑结构23的表面26上。
在图7A至7J中,基板支撑结构23的表面26设有接触组件,例如粒结27。在实施例中,持续地施加液体直到接触组件被液体层64覆盖为止。在施加液体之后,液体层64的常规厚度系在2至5毫米的范围内。优选地,施加液体的步骤是在大致等于液体层64中的液体的蒸气压力的压力水平下执行。在这样的压力下施加液体能减少气体溶解和/或气泡夹带至液体内的机率。
可选地,在施加液体后,执行暂停动作。此动作示意性地示出在图7C中。该暂停动作允许溶解的气体和/或夹带的气泡62扩散到液体层64外。移除溶解的气体和/或夹带的气泡62可减少形成空隙的机会,如前文参考图2所述。
接着,将基板22放置在液体层64的顶面。优选地,如图7D示意性地示出,将基板设置成能够使基板22的第一端部22a的边缘首先以初始角度接触液体层64,在下文中将该初始角度称为倾斜角。在第一次接触之后,将基板22的未接触端部22b下降,直到基板22完全搁置于液体层64上为止,如图7E所示。
在图7D中,将基板22以初始角度α放置。液体接触基板22的底面,且因为毛细作用的缘故而附着于此底面上。在实施例中,在基板22的一端部22a的第一次接触之后,基板22的另一端部22b下降而使得水与基板之间的接触线沿着基板22的底表面向另一端部22b的方向移动,如图7D中箭头示意性所示朝向右边移动。以倾斜角放置基板22降低了空气或气体被夹带至基板22与基板支撑结构23之间的机率,如此可提高欲形成的钳夹的稳定性。倾斜角(α)是锐角,优选小于10度且优选大于5度。实验结果表明这样的倾斜角能产生令人满意的效果。
图7E示出放置于液体层64上之后的基板22。该基板22飘浮于液体层64上。
在将基板设置于液体层的顶面上之后,移除多余的液体。移除多余液体的步骤可包括减小基板22的下面的压力,使其大致低于基板支撑结构23周围的压力的压力水平。上述效果可通过将基板22底面的区域连接至低压环境而实现,如图7F中箭头65所示。
由于液体层64上方的压力水平及液体层64下方的压力水平之间的差异,基板22被拉向基板支撑结构23。结果,多余的液体经由一个或多个通道66被吸走和/或如图7F中箭头67所示被挤压出基板支撑结构23的边缘,所述通道66如图3B中所示的气体分配系统的通路33与35。经过一段时间后,基板22则搁置于基板支撑结构22的表面26的接触组件27上。
移除多余液体的步骤可另外或可选地包括沿着表面26的周缘提供气流。以低于基板22上方的压力而提供此气流,使基板22能够维持与接触组件的接触。气流中所适用的气体包括氮气、氧气与氦气。
气流可以一种或更多种方式移除去过多的液体。例如液体可以被气流刮除。此外,剩下的液滴可以在气流中蒸发掉。可通过提供去湿或“干燥”的气体而增强对剩余液滴的蒸发,所述“干燥”气体即具有小于本身蒸气饱和值50%蒸气含量的气体,优选地小于本身蒸气饱和值10%蒸气含量的气体。
提供气流的步骤示意性地示出于图7G及7H中。气体经由通路66a而进入基板支撑结构23内,同时允许气体经由通路66b而排出。通路66a与66b可以分别对应于图3B中的气体入口33与气体出口35。优选地,维持此气流直到形成毛细层71为止,亦即具有凹面状外表面28的液体薄层其压力低于周围环境的压力为止。已经参考图1及图2对该毛细层进行了说明。
在由于移除多余液体而形成毛细层后,可降低周围压力。为确保仍旧箝制基板22,假如存在有多余的气体,如图7I所示,过多气体可经由阀体45而从基板22下方移除。
在本发明的实施例中,在形成毛细层71之后,可将蒸气提供至毛细层上。可通过至少部分地装有储存槽液体77的储存槽75而提供蒸气73。如图7I及7J所示,储存槽75可以是基板支撑结构23的一部份。可选地,储存槽75可以是外部储存槽。接着经由可连接至外部储存槽和基板支撑结构23的转运系统而提供蒸气73。
应该知道液体蒸气储存槽75可被设置成连接至基板支撑结构23的独立模块。所提供蒸气限制液体从毛细层71的蒸发。如此可能使钳夹有较长的使用寿命。
图8示意性地示出本发明第三实施例的基板支撑结构83的俯视图。此基板支撑结构83包括用于箝制基板的表面86。优选地,此表面86设有接触组件87。此外,基板支撑结构包括气体分配系统,该气体分配系统包括槽沟91、气体入口93和气体出口95。已参考图3A对这些零件的功能进行说明,且同样应用于本实施例中。基板支撑结构83可以与参考图7A至7J说明的基板支撑结构23类似方式用于箝制方法的实施例中。
与图3A所示的基板支撑结构23的实施例不同,基板支撑结构83包括表面86,该表面86被分割成多个子表面(sub-surface)。这些子表面具有诸如六角形的瓷砖(tile)的形式,且被配置成棋盘格状的图案。每个瓷砖可设有圆周垫环(未示出),与参考图5所述的圆周垫环51相似。假如需要箝制如300毫米的晶圆等的较大的基板时,使用被分割成多个子表面的表面86可能较为有利。
为了便于说明,图8B示意性地示出图8A的基板支撑结构83和基板82的组合所形成的钳夹的剖面图。
图9与10示意性地示出不同基板处理及曝光设备,其可与上述基板支撑结构一起使用。参考光刻技术处理晶圆的示例对图9与10进行说明。应该理解,上述设备并未于局限于这样的一种应用。图11示意性地示出箝夹准备单元的实施例,其可实现将基板自动箝制至基板支撑结构上的方法,例如参考图7A至7J所说明的实施例。
现在,参考图9,在基板处理及曝光设备中,使用箝夹准备单元112而使将晶圆箝制到晶圆支撑结构上的方法得以自动化。箝夹准备单元112从基板分配设备接收欲箝制的晶圆,在此示例中该基板分配设备为一个所谓的晶圆轨道111。在箝夹准备单元112中,可利用图7A至7J所述的方法而准备钳夹。在准备好钳夹之后,将钳夹送至基板处理包括:辐射系统,用以提供具有图案的辐射光束;基板支撑结构,用以支撑基板;及光学系统,用以将该具有图案的辐射光束投射至基板的目标部位上,这是现有技术领域技术人员所熟知的。关于示例性的箝夹准备单元的操作之其它细节,将参考图11A至11D进行说明。
在图9中,箝制过程以附图标记115标示。关于示例性的箝夹准备单元的操作的其它细节将参考图11A至11D进行说明。箝夹准备单元112包括真空系统,以提供经控制的压力环境。箝制过程可以从将晶圆122引至箝夹准备单元112的真空系统内开始,例如可通过具有图11A所示晶圆支架121的机械手臂的方式完成。
可以经由真空密封门或承载闭锁室而引进晶圆122。晶圆支撑结构123可已经存在于箝夹准备单元112内。可选地,可利用类似于晶圆122的方式而引进晶圆支撑结构123。
接着,可通过如图11A所示的液体分配单元124将液体施加于晶圆支撑结构123的表面上。液体分配单元124提供液体流,直到产生具有足够“厚度”的液体层为止,接着停止液体流。优选地,液体分配单元124可在箝夹准备单元112内移动,从而能够以有效方式执行液体的施加,而不需要妨碍箝制过程中之前与后继的动作。优选地,在施加液体于基板支撑结构123的表面上之期间,箝夹准备单元112上的压力低于周围压力,例如大致等于液体层中的液体的蒸气压力。可选地,在施加液体之后但在箝制晶圆之前,可降低箝夹准备单元中的压力。
接着,晶圆122及晶圆支撑结构123彼此相对移动,以允许将晶圆122放置于液体层125上。为此,通过诸如图11B所示活动支撑销127的基板传送单元将晶圆122下降至液体层125上。如先前参考图7D所示,晶圆122与液体层125之间的第一次接触可形成初始倾斜角阿尔法(α),该倾斜角优选小于10度且优选大于5度。可通过在降低晶圆122的一侧之前,先降低晶圆122的另一侧,例如通过分别控制支撑销127的移动,而实现上述倾斜的放置。晶圆122的每一侧均下降,直到接触液体层125为止,然后,支撑销127可进一步降低而离开。可在环境压力下将晶圆122放置在液体层125上,该环境压力即约1bar。然而,优选在低压下实施晶圆放置,例如大致等于液体层中的液体之蒸气压力。
现在,晶圆支撑结构123可连接到一个或多个液体连接单元,所述液体连接单元可连接到晶圆支撑结构123,以将液体从晶圆支撑结构中移出。在实施例中,为上述目的可使用图11C所示的连接件126a、126b。可选地,之前已经连接此一个或多个液体连接单元。经由此一个或多个液体连接单元,可以移除多余液体。此液体移除过程可在环境压力下实施,该环境压力为大约1bar。
此外,晶圆支撑结构123可包括一个或多个气体连接单元,以将晶圆支撑结构123连接至气体供应源,例如可使用图11C所示的连接件126a与126b。这些气体连接单元可通过“连接”到真空而产生低压。另外地和/或可选地,气体连接单元可提供气流,以便在晶圆122与晶圆支撑结构123之间形成毛细层,如先前参考图7A至7J所述。可在环境压力下供应气流,该环境压力即大约1bar。需要注意气流所提供的压力必须低于环境压力,以确保晶圆122能够保持其本身与晶圆支撑结构123之间的相对位置。
在将钳夹送至光刻设备113之前,如图11D所示,移除掉连接件126a与126b。可通过机械手臂经由真空紧密门或承载闭锁室而执行对钳夹的前送。
在光刻设备113中处理完毕之后,可将钳夹运送回到箝夹准备单元112或送至独立的松开单元上用于松开,亦即将晶圆从晶圆支撑结构上移除。在图9中,以附图标记116概略地显示此松开过程。可通过将钳夹引入箝夹准备单元112内,并将一个或多个液体连接件连接至晶圆支撑结构123上,而执行此松开过程。经由此一个或多个液体连接件,可将额外的液体供应至毛细液体层,以增加液体层的厚度。可添加额外的液体,使晶圆122开始飘浮于液体层的顶面。以液体压力大致均匀分布的方式来引入额外液体,从而晶圆122不会变形或断裂。
在此阶段下,例如通过支撑销127的方式,晶圆122可从晶圆基板支撑表面123上的液体层抬起。可将晶圆以初始倾斜角而抬起,此过程与上述将晶圆放置到液体层上的过程相反。优选地,在晶圆上升过程期间的初始倾斜角小于10度,且优选大于5度,这可通过分别地控制支撑销的动作而先抬起晶圆的一边,然后抬起晶圆的另一边而实现。最后,例如通过设有晶圆支架121的机械手臂,可将晶圆122从箝夹准备单元112中取出,且朝向晶圆轨道111运送。
在图9中,箝夹准备单元112及光刻设备113被示出为分开的单元。然而,应该理解也可例如通过将箝夹准备单元112的必要功能性包括在光刻设备113的承载闭锁室内,而将箝夹准备单元112结合到光刻设备113内。在该情况下,当晶圆分别进出光刻设备时,晶圆会被箝制与松开。
图10示意性地示出不同的基板处理及曝光设备,其可以与基板支撑结构的实施例一起使用。在图10的配置中,代替单个光刻设备113,使用了多个光刻设备113a、113b与113c。晶圆轨道111及箝夹准备单元112的功能性与参考图9所说明的相同。
在图10中,已经准备好将运送至光刻设备以进行处理的钳夹,可以经由额外的晶圆轨道117而输送至三个不同的光刻设备113a、113b与113c。假如在箝夹准备单元112内执行箝制方法的常规所需时间比在光刻设备113a、113b与113c中任何一个内执行光刻处理常规所需时间更快,那么图10的结构会更加有效。
经由上述说明,已经提及“毛细层”。应该明白,术语“毛细层”应理解为指薄的液体层,其具有凹的弯月面形状且压力小于周围压力。
本发明其它方面进一步限定于基板支撑结构,以将基板箝制在基板支撑结构的表面上,其中基板支撑结构包括:表面,用以接受被液体的毛细层所箝制的基板;液体储存槽,用于储存储存槽液体及该储存槽液体的蒸气;以及蒸气输送系统,用以将储存槽与所述接收表面连通,从而可将储存槽液体的蒸气供应至毛细层。储存槽可在接收表面之下延伸。优选地,储存槽包括凹穴,此凹穴的大部分位于接收表面的下方,而该凹穴的小部分从接收表面周缘处向外延伸。在储存槽中所储存的储存槽液体的体积可大于液体毛细层的体积。储存槽可从接收表面拆卸下来。使用时,毛细层可具有凹面状外表面,而且在储存槽中的液体的自由表面积大于所述凹面状外表面的自由表面积。基板支撑结构还可包括液体移除系统,以移除所述表面周缘的液体。该气体移除系统还可包括气体分配系统。所述气体分配系统包括用以供应气体的至少一个气体入口,及用以移除气体的至少一个气体出口。可选地,气体分配系统可具有位于彼此之间等距离的位置的多个气体入口和多个气体出口。基板支撑结构还可包括气体连接单元以将基板支撑结构与气体供应源连接。气体连接单元可连接至蒸气输送系统。该蒸气输送系统可包括流动控制单元,用以将经由气体连接单元的气流与来自储存槽的蒸气分开。流动控制单元可以是阀体或盖板。基板支撑结构的储存槽可位于基板支撑结构的可移除部上。储存槽和蒸气输送系统可位于基板支撑结构的可移除部上。基板支撑结构还可包括密封结构,其包围所述接收表面以使得气体分配系统所提供的气体在接收表面与密封结构之间流动。接收表面可设有多个接触组件,且其中密封结构的高度对应于所述多个接触组件的高度。可选地,接收表面可还包括凸起的圆周垫环,使得气体分配系统所提供的气体在该圆周垫环与密封结构之间流动。在此实施例中,接收表面可设有多个接触组件,且其中圆周垫环的高度小于所述多个接触组件的高度。接收表面可被分割成多个子表面。然后,液体移除系统可被配置成移除每个子表面周缘的液体。在具有多个子表面的情况下,至少一个子表面可具有大致六角形的形状。
本发明的另一方面还限定了一种方法,用以保持将基板箝制在基板支撑结构上,其中所述方法包括以下步骤:设置基板支撑结构,其具有表面,在该表面上已通过毛细层而箝制基板;提供储存槽,用以储存储存槽液体及该储存槽液体的蒸气;以及将该储存槽液体的蒸气从储存槽运送至毛细层,从而限制从毛细层的蒸发。基板支撑结构可以是先前所说明的任何基板支撑结构。
已经通过上述优选实施例而说明本发明。应该理解,对于本领域技术人员来说,可以对上述实施例构思出不同的修改与替换而不偏离本发明的实质与范围。因此,尽管已对上述特定实施例进行说明,但是其仅作为示例而并非用以局限本发明的范围,本发明的范围应该由所附的权利要求限定。
权利要求书(按照条约第19条的修改)
1.一种将基板(22;122)箝制于基板支撑结构(23;123)的表面上的方法,所述方法包括:
将液体施加于所述基板支撑结构的表面(26)上,所述表面设有多个接触组件(27),使得所述液体形成覆盖所述接触组件的层(94;125);
提供所述基板并将所述基板设置于所述液体层上;
从所述基板底下移除所述液体的一部份,使得所述基板搁置于所述多个接触组件上并由所述基板与所述基板支撑结构的所述表面之间的所述液体的毛细层(1;21)所施加的毛细箝制力箝制,所述毛细层的外液体表面具有在所述毛细层与所述基板之间的第一接触角以及在所述毛细层与所述基板支撑结构之间的第二接触角。
2.如权利要求1所述的方法,其中所述移除所述液体的一部份包括减小所述基板下方的压力。
3.如权利要求1或2所述的方法,其中所述移除所述液体的一部份包括沿着所述表面的周缘提供气流。
4.如权利要求3所述的方法,其中以低于所述基板支撑结构的周围压力的压力提供所述气流。
5.如权利要求3或4所述的方法,其中所述气体包括蒸气含量小于蒸气饱和的50%且优选为小于蒸气饱和的10%的气体,所述蒸气为与所述毛细层的所述液体相同的物质。
6.如权利要求第1-5中任一项所述的方法,其中所述方法还包括在施加所述液体的步骤之前将所述基板支撑结构设置于真空腔内。
7.如权利要求6所述的方法,其中所述方法还包括在所述施加所述液体的步骤之前先降低所述真空腔内的所述气体压力。
8.如权利要求7所述的方法,其中所述气体压力被降至大致等于所述液体层内的所述液体的蒸气压力。
9.如权利要求7或8所述的方法,其中所述方法还包括暂停预定时间段,以允许溶解的气体和/或夹带的气泡扩散出所施加的液体层外。
10.如权利要求1-9中任一项所述的方法,其中所述基板相对于所述液体层的所述顶表面以初始角度放置于所述液体层上。
11.如权利要求10所述的方法,其中所述初始角度为大于5度的锐角。
12.如权利要求10或11所述的方法,其中以角度放置为通过分别控制多个基板支撑销而完成。
13.如权利要求1-12所述的方法,其中所述方法还包括通过提供蒸气至所述该毛细层而减少从所述毛细层的蒸发。
14.如权利要求13所述的方法,其中所述蒸气是水蒸气。
15.如权利要求1-14中任一项所述的方法,其中所述液体是水。
16.如权利要求1-15中任一项所述的方法,其中所述物质是水。
17.一种用以箝制基板(22;122)的箝夹准备单元(112),所述箝夹准备单元包括:
基板支撑结构(23;123),其具有设置有多个接触组件(27)的表面;
液体分配单元(124),其用于施加液体至所述基板支撑结构的所述表面上,使得所述接触组件被液体层(94;125)覆盖;
基板输送单元(127),用于将所述基板放置于所述液体层上;和
液体移除系统(33,35;126a,126b),其用于从所述基板的下方移除一部份的所述液体,以将所述基板搁置于所述多个接触组件上,且被所述基板与所述基板支撑结构的所述表面之间的液体的毛细层(1;21)所施加的毛细箝制力箝制,所述液体移除系统包括气体分配系统(33,35;126a,126b);
其中所述基板支撑结构还包括围绕所述表面的密封结构(29),从而由所述气体分配系统所提供的气体可在所述表面与所述密封结构之间流动。
18.权利要求17所述的箝夹准备单元,其中所述液体移除系统(33,35;126a;126b)被设置成用于移除所述表面的周缘的一部分液体。
19.如权利要求17所述的箝夹准备单元,其中所述气体分配系统包括用于提供气体的至少一个气体入口(33),和用于移除气体的至少一个气体出口(35)。
20.如权利要求17所述的箝夹准备单元,其中所述气体分配系统具有位于彼此之间大致等距离的位置上的多个气体入口(33)及多个气体出口(35)。
21.如权利要求17-20中任一项所述的箝夹准备单元,其中所述基板输送单元(127)被设置成相对于所述液体层的所述顶表面以初始角度将所述基板放置于所述液体层上。
22.如权利要求21所述的箝夹准备单元,其中所述初始角度是大于五度的锐角。
23.如权利要求21或22所述的箝夹准备单元,其中所述基板输送单元(127)包括基板支撑销,且通过分别控制所述基板支撑销而以初始角度进行放置。
24.如权利要求17-23中任一项所述的箝夹准备单元,其中所述密封结构的高度对应于所述基板支撑结构的所述多个接触组件的高度。
25.如权利要求17-24中任一项所述的箝夹准备单元,其中所述基板支撑结构的所述表面被分割成多个子表面。
26.如权利要求25所述的箝夹准备单元,其中所述液体移除系统被设置成移除每个所述子表面的周缘的液体。
27.如权利要求25或26所述的箝夹准备单元,其中至少一个所述子表面具有大致六角形的形状。
28.如权利要求17-27中任一项所述的箝夹准备单元,其中所述基板支撑结构还包括:
储存槽(41),其用于储存储存槽液体及该储存槽液体的蒸气;
蒸气输送系统(43),其用于将所述储存槽与所述接收表面连接,使得当所述储存槽液体的蒸气存在时则可被供应至所述毛细层。
29.如权利要求28所述的箝夹准备单元,其中所述储存槽在所述接收表面下方延伸。
30.如权利要求28或29所述的箝夹准备单元,其中所述储存槽可从所述接收表面拆卸。
31.如权利要求28-30中任一项所述的箝夹准备单元,其中所述毛细层在使用时具有凹面状外表面,且所述储存槽中液体的自由表面积大于所述凹面状外表面的自由表面积。
32.如权利要求28-31中任一项所述的箝夹准备单元,还包括气体连接单元,以将所述基板支撑结构与气体供应源连通。
33.如权利要求32所述的箝夹准备单元,其中所述气体连接单元连接至所述蒸气输送系统。
34.如权利要求33所述的箝夹准备单元,其中所述蒸气输送系统包括流动控制单元,该流动控制单元用以将经由所述气体连接单元的气流与来自所述储存槽的蒸气分离。
35.如权利要求28-34中任一项所述的箝夹准备单元,其中所述基板支撑结构的所述表面还包括凸起的圆周垫环(51)。
36.如权利要求35所述的箝夹准备单元,其中所述圆周垫环的高度等于或小于所述基板支撑结构的多个接触组件的高度。
37.一种从基板支撑结构(23;123)上松开基板(22;122)的方法,所述基板经由在所述基板与所述基板支撑结构的表面之间的液体的毛细层(1;21)所施加的毛细箝制力所箝制,所述方法包括:
在所述毛细层的外圆周表面处提供额外液体至所述毛细层;以及
将所述基板从所述液体抬起。
38.如权利要求37所述的方法,其中提供足够的额外液体,使得所述基板开始飘浮于一层所述液体上。
39.如权利要求37或38所述的方法,其中所述基板以初始倾斜角度而从所述液体抬起。
40.一种松开单元(112),包括:
基板支撑结构(23;123),其通过毛细层(1;21)而在所述基板支撑结构的表面上箝制有基板(22;122);
液体移除系统(33,35;126a,126b),其用于在所述毛细层的外圆周表面处提供额外液体至所述基板下方的所述毛细层;和
基板输送单元(127),用于从所述液体层移除所述基板。
41.如权利要求40所述的松开单元,其中所述基板输送单元(127)被设置成相对于所述液体层的所述顶表面以初始角度而将所述基板从所述液体抬起。
42.如权利要求41所述的松开单元,其中所述初始角度是大于5度的锐角。
43.如权利要求40-42所述的松开单元,其中所述基板输送单元(127)包括基板支撑销且通过分别控制所述基板支撑销而以初始角度进行抬起。
46.一种包括光刻设备的光刻系统,所述光刻设备包括:
辐射系统,用以提供具有图案的辐射光束;
光学系统,用以将所述具有图案的辐射光束投射至基板的目标部位上;和
如权利要求17-36中任一项所述的箝夹准备单元,用以将所述基板箝制至基板支撑结构的表面上。
45.如权利要求44所述的光刻系统,还包括如权利要求40-43中任一项所述的松开单元。
46.如权利要求44或45所述的光刻系统,其中所述具有图案的辐射光束是由多个带电粒子小光束所形成。
47.如权利要求46所述的光刻系统,其中所述带电粒子小光束是电子小光束。
说明或声明(按照条约第19条的修改)
根据PCT条约第19条和第46.4项的简要说明
与所引用的现有技术相反,本发明的目的在于提供一种将基板钳制在用于光刻系统中的基板支撑结构的表面上,具体地使得可以优选的经济和/或简单的方式容纳至先进现代的、特别高科技的充电粒子光刻系统中,从而可解决现有设计中的缺点,所述缺点诸如受限于非真空系统或者不能用于充电粒子光刻系统。
因此,本发明的目的在于提供基板支撑结构,其通过毛细层将基板钳制在基板支撑结构的表面上,还提供了以改进的性能将基板钳制在基板支撑结构的表面上的方法。
所述目的通过提供将基板钳制在基板支撑结构的表面上的方法而实现,所述方法包括:将液体施加于所述基板支撑结构的表面上,所述表面设有多个接触组件,使得所述液体形成覆盖所述接触组件的层;提供所述基板并将所述基板设置于所述液体层上;从所述基板底下移除所述液体的一部份,使得所述基板搁置于所述多个接触组件上并由所述基板与所述基板支撑结构的所述表面之间的所述液体的毛细层所施加的毛细箝制力所箝制,从而将液体层容纳在所述基板支撑结构与所述基板之间。
通过包括毛细层,其中所述毛细层的外液体表面具有在所述毛细层与所述基板之间的第一接触角以及在所述毛细层与所述基板支撑结构之间的第二接触角,本发明不仅可用于常规光刻系统,还可应用于充电粒子光刻系统或远紫外(EUV)光刻系统中。本发明还可使用箍夹机构,而不需要局部地浸入光学器件中,也不用在基板的边缘上需要充足且持续的流体流,上述两者在除了常规光刻以外的一些类型的光刻系统中是禁止的,如充电粒子光刻。
Claims (49)
1.一种将基板(22;122)箝制于基板支撑结构(23;123)的表面上的方法,所述方法包括:
将液体施加于所述基板支撑结构的表面(26)上,所述表面设有多个接触组件(27),使得所述液体形成覆盖所述接触组件的层(94;125);
提供所述基板并将所述基板设置于所述液体层上;
从所述基板底下移除所述液体的一部份,使得所述基板搁置于所述多个接触组件上并由所述基板与所述基板支撑结构的所述表面之间的所述液体的毛细层(1;21)所施加的毛细箝制力箝制。
2.如权利要求1所述的方法,其中所述移除所述液体的一部份包括减小所述基板下方的压力。
3.如权利要求1或2所述的方法,其中所述移除所述液体的一部份包括沿着所述表面的周缘提供气流。
4.如权利要求3所述的方法,其中以低于所述基板支撑结构的周围压力的压力提供所述气流。
5.如权利要求3或4所述的方法,其中所述气体包括蒸气含量小于蒸气饱和的50%且优选为小于蒸气饱和的10%的气体,所述蒸气为与所述毛细层的所述液体相同的物质。
6.如权利要求第1-5中任一项所述的方法,其中所述方法还包括在施加所述液体的步骤之前将所述基板支撑结构设置于真空腔内。
7.如权利要求6所述的方法,其中所述方法还包括在所述施加所述液体的步骤之前先降低所述真空腔内的所述气体压力。
8.如权利要求7所述的方法,其中所述气体压力被降至大致等于所述液体层内的所述液体的蒸气压力。
9.如权利要求7或8所述的方法,其中所述方法还包括暂停预定时间段,以允许溶解的气体和/或夹带的气泡扩散出所施加的液体层外。
10.如权利要求1-9中任一项所述的方法,其中所述基板相对于所述液体层的所述顶表面以初始角度放置于所述液体层上。
11.如权利要求10所述的方法,其中所述初始角度为大于5度的锐角。
12.如权利要求10或11所述的方法,其中以角度放置为通过分别控制多个基板支撑销而完成。
13.如权利要求1-12所述的方法,其中所述方法还包括通过提供蒸气至所述该毛细层而减少从所述毛细层的蒸发。
14.如权利要求13所述的方法,其中所述蒸气是水蒸气。
15.如权利要求1-14中任一项所述的方法,其中所述液体是水。
16.如权利要求1-15中任一项所述的方法,其中所述物质是水。
17.一种用以箝制基板(22;122)的箝夹准备单元(112),所述箝夹准备单元包括:
基板支撑结构(23;123),其具有设置有多个接触组件(27)的表面;
液体分配单元(124),其用于施加液体至所述基板支撑结构的所述表面上,使得所述接触组件被液体层(94;125)覆盖;
基板输送单元(127),用于将所述基板放置于所述液体层上;和
液体移除系统(33,35;126a,126b),其用于从所述基板的下方移除一部份的所述液体,以将所述基板搁置于所述多个接触组件上,且被所述基板与所述基板支撑结构的所述表面之间的液体的毛细层(1;21)所施加的毛细箝制力箝制。
18.权利要求17所述的箝夹准备单元,其中所述液体移除系统(33,35;126a;126b)被设置成用于移除所述表面的周缘的一部分液体。
19.如权利要求17所述的箝夹准备单元,其中所述液体移除系统包括气体分配系统(33,35;126a,126b)。
20.如权利要求18所述的箝夹准备单元,其中所述气体分配系统包括用于提供气体的至少一个气体入口(33),和用于移除气体的至少一个气体出口(35)。
21.如权利要求19所述的箝夹准备单元,其中所述气体分配系统具有位于彼此之间大致等距离的位置上的多个气体入口(33)及多个气体出口(35)。
22.如权利要求17-22中任一项所述的箝夹准备单元,其中所述基板输送单元(127)被设置成相对于所述液体层的所述顶表面以初始角度将所述基板放置于所述液体层上。
23.如权利要求22所述的箝夹准备单元,其中所述初始角度是大于五度的锐角。
24.如权利要求22或23所述的箝夹准备单元,其中所述基板输送单元(127)包括基板支撑销,且通过分别控制所述基板支撑销而以初始角度进行放置。
25.如权利要求18-20中任一项所述的箝夹准备单元,其中所述基板支撑结构还包括围绕所述表面的密封结构(29),使得由所述气体分配系统提供的气体可在所述表面与所述密封结构之间流动。
26.如权利要求25所述的箝夹准备单元,其中所述密封结构的高度对应于所述基板支撑结构的所述多个接触组件的高度。
27.如权利要求17-26中任一项所述的箝夹准备单元,其中所述基板支撑结构的所述表面被分割成多个子表面。
28.如权利要求27所述的箝夹准备单元,其中所述液体移除系统被设置成移除每个所述子表面的周缘的液体。
29.如权利要求27或28所述的箝夹准备单元,其中至少一个所述子表面具有大致六角形的形状。
30.如权利要求17-29中任一项所述的箝夹准备单元,其中所述基板支撑结构还包括:
储存槽(41),其用于储存储存槽液体及该储存槽液体的蒸气;
蒸气输送系统(43),其用于将所述储存槽与所述接收表面连接,使得当所述储存槽液体的蒸气存在时则可被供应至所述毛细层。
31.如权利要求30所述的箝夹准备单元,其中所述储存槽在所述接收表面下方延伸。
32.如权利要求30或31所述的箝夹准备单元,其中所述储存槽可从所述接收表面拆卸。
33.如权利要求30-32中任一项所述的箝夹准备单元,其中所述毛细层在使用时具有凹面状外表面,且所述储存槽中液体的自由表面积大于所述凹面状外表面的自由表面积。
34.如权利要求30-33中任一项所述的箝夹准备单元,还包括气体连接单元,以将所述基板支撑结构与气体供应源连通。
35.如权利要求34所述的箝夹准备单元,其中所述气体连接单元连接至所述蒸气输送系统。
36.如权利要求35所述的箝夹准备单元,其中所述蒸气输送系统包括流动控制单元,该流动控制单元用以将经由所述气体连接单元的气流与来自所述储存槽的蒸气分离。
37.如权利要求30-36中任一项所述的箝夹准备单元,其中所述基板支撑结构的所述表面还包括凸起的圆周垫环(51)。
38.如权利要求37所述的箝夹准备单元,其中所述圆周垫环的高度等于或小于所述基板支撑结构的多个接触组件的高度。
39.一种从基板支撑结构(23;123)上松开基板(22;122)的方法,所述基板经由在所述基板与所述基板支撑结构的表面之间的液体的毛细层(1;21)所施加的毛细箝制力所箝制,所述方法包括:
在所述毛细层的外圆周表面处提供额外液体至所述毛细层;以及
将所述基板从所述液体抬起。
40.如权利要求39所述的方法,其中提供足够的额外液体,使得所述基板开始飘浮于一层所述液体上。
41.如权利要求39或40所述的方法,其中所述基板以初始倾斜角度而从所述液体抬起。
42.一种松开单元(112),包括:
基板支撑结构(23;123),其通过毛细层(1;21)而在所述基板支撑结构的表面上箝制有基板(22;122);
液体移除系统(33,35;126a,126b),其用于在所述毛细层的外圆周表面处提供额外液体至所述基板下方的所述毛细层;和
基板输送单元(127),用于从所述液体层移除所述基板。
43.如权利要求42所述的松开单元,其中所述基板输送单元(127)被设置成相对于所述液体层的所述顶表面以初始角度而将所述基板从所述液体抬起。
44.如权利要求43所述的松开单元,其中所述初始角度是大于5度的锐角。
45.如权利要求42-44所述的松开单元,其中所述基板输送单元(127)包括基板支撑销且通过分别控制所述基板支撑销而以初始角度进行抬起。
46.一种包括光刻设备的光刻系统,所述光刻设备包括:
辐射系统,用以提供具有图案的辐射光束;
光学系统,用以将所述具有图案的辐射光束投射至基板的目标部位上;和
如权利要求17-38中任一项所述的箝夹准备单元,用以将所述基板箝制至基板支撑结构的表面上。
47.如权利要求46所述的光刻系统,还包括如权利要求42-45中任一项所述的松开单元。
48.如权利要求46或47所述的光刻系统,其中所述具有图案的辐射光束是由多个带电粒子小光束所形成。
49.如权利要求48所述的光刻系统,其中所述带电粒子小光束是电子小光束。
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GB0905786A GB2469112A (en) | 2009-04-03 | 2009-04-03 | Wafer support using controlled capillary liquid layer to hold and release wafer |
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- 2010-02-18 KR KR1020167013179A patent/KR101757311B1/ko active IP Right Grant
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CN108987304B (zh) * | 2017-05-30 | 2022-07-05 | Asm知识产权私人控股有限公司 | 基板支撑装置 |
Also Published As
Publication number | Publication date |
---|---|
US20160370704A1 (en) | 2016-12-22 |
EP2399278A1 (en) | 2011-12-28 |
TWI540670B (zh) | 2016-07-01 |
TW201044492A (en) | 2010-12-16 |
USRE49725E1 (en) | 2023-11-14 |
KR101624193B1 (ko) | 2016-05-26 |
JP5762982B2 (ja) | 2015-08-12 |
KR101757311B1 (ko) | 2017-07-26 |
KR20160063411A (ko) | 2016-06-03 |
TWI596699B (zh) | 2017-08-21 |
KR20110128890A (ko) | 2011-11-30 |
US9460954B2 (en) | 2016-10-04 |
GB2469112A (en) | 2010-10-06 |
US20100265486A1 (en) | 2010-10-21 |
JP2012518899A (ja) | 2012-08-16 |
GB0905786D0 (en) | 2009-05-20 |
EP3557606A1 (en) | 2019-10-23 |
EP3557606B1 (en) | 2020-08-26 |
TW201626498A (zh) | 2016-07-16 |
CN102422385B (zh) | 2016-01-06 |
WO2010094748A1 (en) | 2010-08-26 |
US10078274B2 (en) | 2018-09-18 |
EP2399278B1 (en) | 2019-09-18 |
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