TW201405728A - 半導體封裝及半導體封裝基座的製造方法 - Google Patents

半導體封裝及半導體封裝基座的製造方法 Download PDF

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Publication number
TW201405728A
TW201405728A TW102124339A TW102124339A TW201405728A TW 201405728 A TW201405728 A TW 201405728A TW 102124339 A TW102124339 A TW 102124339A TW 102124339 A TW102124339 A TW 102124339A TW 201405728 A TW201405728 A TW 201405728A
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Taiwan
Prior art keywords
pedestal
semiconductor package
wire
layer
conductive
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TW102124339A
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English (en)
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TWI562295B (en
Inventor
Tzu-Hung Lin
Wen-Sung Hsu
Ta-Jen Yu
Andrew C Chang
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Mediatek Inc
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Priority claimed from US13/721,983 external-priority patent/US9177899B2/en
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Publication of TW201405728A publication Critical patent/TW201405728A/zh
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Publication of TWI562295B publication Critical patent/TWI562295B/zh

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Abstract

本發明提供一種半導體封裝及半導體封裝基座的製造方法。上述半導體封裝包括一導線，內嵌於一基座中；一半導體元件，藉由一導電結構固接於上述導線上。

Description

半導體封裝及半導體封裝基座的製造方法
本發明係關於一種半導體封裝及半導體封裝基座的製造方法，特別係關於一種高密度半導體封裝的基座的製造方法及半導體封裝。
為了確保電子產品或通信設備的小型化和多功能性，會要求半導體封裝具有小尺寸，以支援多針連接、高速和高功能。輸入/輸出(I/O)引腳數的增加再加上對高性能積體電路(IC)的需求增加，導致了覆晶封裝體的發展。
覆晶技術係使用芯片上之凸塊以與一封裝基板互連。正面朝下的覆晶係經過最短的路徑接合至封裝基板。這些技術可以不僅適用於單一晶片封裝技術，也可以適用於更高層數或集成層數的封裝技術，在更高層數或集成層數的封裝技術中的封裝體更大，且這些技術可以適用於容納數個晶片的更複雜的基板，以形成較大的功能單元。使用一區域陣列(area arry)的上述覆晶技術可實現與元件之更高的密度連接和非常低的電感之封裝體連接。然而，上述覆晶技術會要求印刷電路板(PCB)製造商縮小線寬和線距或發展晶片直接接觸(direct chip attach,DCA)半導體。相應地，增加輸入/輸出(I/O)連接數量之多功能晶片封裝會導致熱電特性問題，舉例來說，散熱問題、串音(crosstalk)、訊號傳輸延遲(Propagation Delay)或射頻(RF)電路的電磁干擾等問題。上述熱電特性問題會影響產品的可靠度和品質。
因此，在此技術領域中，需要高密度的覆晶封裝和用於高密度的覆晶封裝之印刷電路板(PCB)，以改善上述缺點。
有鑑於此，本發明之目的在於提供一種改良式的半導體封裝及半導體封裝基座的製造方法。
本發明之一實施例係提供一種半導體封裝。該半導體封裝包括一導線，內嵌於一基座中；以及一半導體元件，藉由一導電結構固接於該導線上。
本發明之另一實施例係提供一種半導體封裝。該半導體封裝包括一導線，該導線的一頂面和一側壁的至少一部分連接至一基座；以及一半導體元件，藉由一導電結構固接於該導線上。
本發明之又一實施例係提供一種半導體封裝基座的製造方法。該半導體封裝基座的製造方法包括提供一載板，該載板的一頂面和一底面上具有複數個導電種晶層；分別於該些導電種晶層上形成複數個第一導線；將一第一基座材料層和一第二基座材料層分別堆疊於該些導電種晶層上，且覆蓋該些第一導線；分別於該第一基座材料層的一第一表面和該第二基 座材料層的一第一表面上形成複數個第二導線，其中該第一基座材料層的該第一表面和該第二基座材料層的該第一表面分別遠離該載板的該頂面和該底面；以及將帶有該些第一導線和該些第二導線的該第一基座材料層以及將帶有該些第一導線和該些第二導線的該第二基座材料層分別從該載板的該頂面和該底面分離，以形成一第一基座和一第二基座。
本發明之又另一實施例係提供一種半導體封裝基座的製造方法。該半導體封裝基座的製造方法包括提供一載板；於該載板上形成至少一導線；於該載板上形成一額外絕緣材料；以及於該額外絕緣材料上定義圖案，其中該圖案係形成於至少一導線上。
本發明所揭示之半導體封裝及半導體封裝基座的製造方法，可改善產品的可靠度和品質。
500a、500b、500c、500d、500e‧‧‧半導體封裝
200、450‧‧‧基座
200a‧‧‧基座部分
200c‧‧‧第一基座
200d‧‧‧第二基座
202a、202b、202c、202d、454‧‧‧導線
204a、204b、204c、204d、462‧‧‧側壁
206a、206b、206c、206d‧‧‧底面
208‧‧‧絕緣層
210、458‧‧‧開口
212a、212b、212c、212d、401、451、460‧‧‧頂面
214‧‧‧元件貼附面
216‧‧‧銅層
218‧‧‧導電緩衝層
220‧‧‧焊錫蓋層
222‧‧‧導電結構
230‧‧‧底膠填充材質或底膠
300‧‧‧半導體元件
301‧‧‧半導體主體
302‧‧‧絕緣層
304‧‧‧金屬焊墊
306‧‧‧凸塊下金屬層
400‧‧‧載板
403‧‧‧底面
402a、402b‧‧‧導電種晶層
404a、404b‧‧‧第一導線
410a、410b‧‧‧第二導線
406a‧‧‧第一基座材料層
406b‧‧‧第二基座材料層
408a、408b‧‧‧介層孔插塞
412、414‧‧‧第一表面
416、418‧‧‧第二表面
456‧‧‧額外絕緣材料
W1‧‧‧寬度
第1-4圖顯示本發明不同實施例之半導體封裝之剖面示意圖。
第5a-5e圖為本發明一實施例之一半導體封裝的基座的製造方法的剖面示意圖。
第6a-6e圖為本發明另一實施例之一半導體封裝的製造方法的剖面示意圖。
為了讓本發明之目的、特徵、及優點能更明顯易懂，下文特舉實施例，並配合所附圖示，做詳細之說明。本發 明說明書提供不同的實施例來說明本發明不同實施方式的技術特徵。其中，實施例中的各元件之配置係為說明之用，並非用以限制本發明。且實施例中圖式標號之部分重複，係為了簡化說明，並非意指不同實施例之間的關聯性。
第1-4圖顯示本發明不同實施例之半導體封裝之剖面示意圖。在本實施例中，上述半導體封裝可為一覆晶封裝體(flip chip package)，該覆晶封裝體使用一導電結構(例如一銅柱狀凸塊(copper pillar bump))以將一半導體元件連接至一基座，其中該導電結構接觸該導線。在本發明另一實施例中，上述半導體封裝可為使用一接合線技術的封裝，以將一半導體元件連接至一基座。舉例來說，該半導體元件可藉由導電結構固接於導線上。第1圖顯示本發明一實施例之半導體封裝500a之剖面示意圖。請參考第1圖，上述半導體封裝500a可包括一基座200，上述基座200具有一元件貼附面(device attach surface)214。在本發明一實施例中，基座200，例如為一印刷電路板(print circuit board，PCB)，可由聚丙烯(polypropylene，PP)來形成。並且注意基座200可為一單一層(single layer)結構或一多層(multilayer)結構。複數個導線202a，內嵌於基座200中。在本發明一實施例中，導線202a可包括訊號線段或接地線段，上述訊號線或接地線可用於半導體元件300的輸入/輸出(input/output，I/O)連接，其中半導體元件300直接固接(mounted)至基座200之上。因此，每一個導線202a具有視為基座200之一墊區之部分。在本實施例中，導線202a的寬度W1係設計為大於5μm。然而，應注意導線的寬度W1並無限制。對於 不同的設計，如果有需要的話，導線的寬度W1可以小於5μm。
半導體元件300可透過一接合製程用面向基座200的主動表面(active surface)而固接於基座200的元件貼附面214上。在本發明一實施例中，半導體元件300可包括一晶片(die)、一被動構件(passive component)、一封裝(package)或一晶圓級封裝(wafer level package)。在本實施例中，半導體元件300可為一覆晶封裝體(flip chip package)。半導體元件300的一電路係設置於上述主動表面上，且金屬焊墊304係設置於上述電路的一頂部上。上述半導體元件300的上述電路係藉由設置於半導體元件300的主動表面上的複數個導電結構222互連至基座200之電路。然而，應注意如第1圖所示的導電結構222僅為一實施例，然其並非用以限定本發明。
如第1圖所示，半導體元件300可包括一半導體主體301，位於上述半導體主體301上(overlying)之金屬焊墊304，以及覆蓋金屬焊墊304之一絕緣層302。在本實施例中，半導體主體301可包括但並非限制於一半導體基板、形成於上述半導體基板的主要表面(main surface)上的電路元件、層間介電層(ILD)和互連結構。在本發明一實施例中，上述互連結構可包括複數個金屬層、與金屬層交錯堆疊(laminate)的複數個介電層，以及穿過位於半導體基板上的該些介電層的複數個介層孔插塞(via)。上述金屬焊墊304可包括上述互連結構的上述金屬層的一最上層金屬層。在本發明一實施例中，絕緣層302可以為一單一層結構或一多層結構，以及絕緣層302可包括但並非限制於氮化矽、氧化矽、氮氧化矽、聚醯亞胺(polyimide) 或上述任意組合。並且，絕緣層302可具有應力緩衝和絕緣的功能。在本發明一實施例中，金屬焊墊304可包括但並非限制鋁、銅或上述合金。可於絕緣層302中形成複數個開口。每一個開口暴露出金屬焊墊304的至少一部分。
如第1圖所示，導電結構222可包括一導電凸塊結構(例如一銅凸塊結構或一焊錫凸塊結構)、一導線結構，或一導電膠結構(conductive paste structure)。在本實施例中，導電結構222可為由一金屬堆疊構成的銅凸塊結構，上述金屬堆疊包括一凸塊下金屬層(under bump metallurgy(UBM)layer)306、一銅層216(例如一電鍍銅層)和一焊錫蓋層(solder cap)220。上述金屬堆疊可進一步包括一導電緩衝層218，其中導電緩衝層218位於銅層216和焊錫蓋層220之間。在本發明一實施例中，可利用例如一濺鍍(sputtering)法或電鍍(plating)法的一沉積製程以及後續的一非等向性蝕刻製程(anisotropic etching process)，於開口中暴露出來的金屬焊墊304上形成凸塊下金屬層(UBM layer)306。上述非等向性蝕刻製程係於形成導電柱狀物之後進行。凸塊下金屬層306也可延伸於絕緣層302的一頂面上。在本實施例中，凸塊下金屬層306可包括鈦、銅或上述組合。銅層216(例如一電鍍銅層)，可形成於凸塊下金屬層306上。開口可利用銅層216和凸塊下金屬層306填充，且位於開口內的銅層216和凸塊下金屬層306可形成導電結構222的一集成插塞(integral plug)。銅層216的形成位置(圖未顯示)可利用一乾式光阻(dry film photoresist)圖型(pattern)或一液態光阻(liquid photoresist)圖型來定義。
可透過電鍍焊錫和圖案化光阻層或透過網印(screen printing)製程和後續的一回焊製程於銅層216上形成焊錫蓋層220。可利用電鍍法於銅層216和焊錫蓋層220之間形成由鎳形成的導電緩衝層218。上述導電緩衝層218可作為形成於其上的焊錫蓋層220的種晶層(seed layer)、一黏著層(adhesion layer)以及一阻障層(barrier layer)。在本發明一實施例中，導電結構222(例如為導電柱狀結構)可作為金屬焊墊304的焊點(solder joint)，而金屬焊墊304係用於傳輸形成於其上的半導體元件300的輸入/輸出(I/O)訊號、接地(ground)訊號或電源(power)訊號。因此，導電結構222的銅層216可幫助增加凸塊結構的機械強度。在本發明一實施例中，可於半導體元件300和基座200之間的間隙中導入一底膠填充材質或底膠230。在本發明一實施例中，底膠填充材質或底膠230可包括毛細填充膠(capillary underfill，CUF)、成型底部填充膠(molded underfill，MUF)、非導電性絕緣膠(nonconductive paste，NCP)、非導電性絕緣膜(nonconductive film，NCF)或上述任意組合。
在本發明一實施例中，導線具有一頂面，上述頂面可位於上述基座的一表面的上方、下方或對齊上述基座的一表面，以改善高密度半導體封裝的繞線能力。如第1圖所示，導線202a的頂面212a設置於上述基座200的元件貼附面214的下方。意即導線202a的一底面206a和導線202a的至少一部分側壁204a係設計連接至基座200。在本實施例中，導電結構222連接基座200的至少一部分。舉例來說，導電結構222的焊錫蓋層220係設置為與基座200的一部分接觸。進一步地，導電結構222 可僅連接至導線202a的一頂面212a。由於導線的頂面凹陷於基座200的元件貼附面214內，所以會增加凸塊接合至導線的空間(bump-to-trace space)，且有效地避免凸塊接合至導線的橋接問題(the problem of bump-to-trace bridging)。
第2圖顯示本發明另一實施例之半導體封裝500b之剖面示意圖。上述圖式中的各元件如有與第1圖所示相同或相似的部分，則可參考前面的相關敍述，在此不做重複說明。在本實施例中，內嵌於基座200中的半導體封裝500b的導線202b可具有一頂面212b，上述頂面212b係設計為對齊於基座200的元件貼附面214，以改善用於高密度半導體封裝的繞線能力。意即導線202b的一底面206b和一側壁204b係設計為完全連接至基座200。因此，導電結構222的焊錫蓋層220係設置於基座200的元件貼附面214上，且僅接觸至導線202b的一頂面212b。
第3圖顯示本發明又一實施例之半導體封裝500c之剖面示意圖。上述圖式中的各元件如有與第1和2圖所示相同或相似的部分，則可參考前面的相關敍述，在此不做重複說明。在本實施例中，內嵌於基座200中的半導體封裝500c的導線202c可具有一頂面212c，上述頂面212c係設計為位於基座200的元件貼附面214的上方，以改善用於高密度半導體封裝的繞線能力。意即導線202c的一底面206c和導線202c的僅一部分側壁204c係設計連接至基座200。在本實施例中，導電結構222的焊錫蓋層220係設置於基座200的元件貼附面214上，且包裹導線202c的一頂面212c和僅包裹導線202c一部分側壁204c。
第4圖顯示本發明又另一實施例之半導體封裝500d之剖面示意圖。上述圖式中的各元件如有與第1-3圖所示相同或相似的部分，則可參考前面的相關敍述，在此不做重複說明。在本發明一實施例中，上述基座可包括如第1-3圖所示的一單一層結構。在本發明另一實施例中，上述基座可包括一多層結構。在本實施例中，內嵌於基座部分200a中的半導體封裝500d之導線202d可具有一頂面212d，上述頂面212d係設計對齊於基座部分200a的元件貼附面214，以改善用於高密度半導體封裝的繞線能力。意即導線202d的一底面206d和一側壁204d係設計為連接至基座部分200a。並且，具有開口210的一絕緣層208係設置於基座部分200a上。上述絕緣層208設置於基座部分200a的元件貼附面214的上方。在本實施例中，基座部分200a和絕緣層208可一起視為一多層基座。如第4圖所示，導線202d從開口210中暴露出來。因此，導電結構222的焊錫蓋層220係穿過絕緣層208的一部分而形成，且僅接觸至導線202d的頂面212d。應注意絕緣層208不需對齊於導線202d的側壁204d。絕緣層208可設計為位於如第4圖所示的導線202d的側壁204d的外側或內側。
第5a-5e圖為本發明一實施例之一半導體封裝的基座(即第一基座200c和第二基座200d)的製造方法的剖面示意圖。在本實施例中，一半導體封裝的基座的製造方法也可稱為一雙側基座製程(double-sided base fabricating process)。實施例中的各元件如有與第1-4圖所示相同或相似的部分，則可參考前面的相關敍述，在此不做重複說明。如第5a圖所示，提供 一載板400，上述載板400的一頂面401和一底面403上具有導電種晶層(conductive seed layer)402a和導電種晶層402b。在本發明一實施例中，載板400可包括FR4環氧玻璃(FR4 glass epoxy)或不鏽鋼(stainless steel)。並且，導電種晶層402a和導電種晶層402b係做為種晶層以用於後續形成之位於上述載板400的頂面401和底面403上的基座的互連導線。在本發明一實施例中，導電種晶層402a和導電種晶層402b可包括銅。
接著，如第5b圖所示，分別於載板400的頂面401和底面403上形成第一導線404a和第一導線404b，即分別於導電種晶層402a和導電種晶層402b上形成第一導線404a和第一導線404b。第一導線404a和第一導線404b的底部係連接至導電種晶層402a和導電種晶層402b的頂部。在本發明一實施例中，可利用一電鍍製程(plating process)和一非等向性蝕刻製程形成第一導線404a和第一導線404b。上述電鍍製程和非等向性蝕刻製程係同時於上述載板400的頂面401和底面403進行。在本發明一實施例中，電鍍製程可包括一有電電鍍製程(electrical plating process)。在本發明一實施例中，第一導線404a和第一導線404b可包括銅。在本發明一實施例中，第一導線404a和第一導線404b的寬度可設計大於5μm。然而，應注意導線的寬度並無限制。對於不同的設計，如果有需要的話，導線的寬度可以小於5μm。在本實施例中，上述非等向性蝕刻製程可精確地控制第一導線404a和404b的寬度。
接著，如第5c圖所示，進行一堆疊製程，將一第一基座材料層406a和一第二基座材料層406b分別堆疊於載板 400的頂面401和底面403上，即將一第一基座材料層406a和一第二基座材料層406b分別堆疊於導電種晶層402a和導電種晶層402b上，其中第一基座材料層406a和第二基座材料層406b分別覆蓋第一導線404a和第一導線404b。在本實施例中，同時於上述載板400的頂面401和底面403上進行第一基座材料層406a和第二基座材料層406b的堆疊製程。在本發明一實施例中，第一基座材料層406a和第二基座材料層406b可包括聚丙烯(polypropylene，PP)。
接著，請再參考第5c圖，進行一鑽孔製程，以形成穿過第一基座材料層406a和第二基座材料層406b的開口(圖未顯示)，以定義後續形成的介層孔插塞408a和介層孔插塞408b的位置。在本發明一實施例中，上述鑽孔製程包括一雷射鑽孔製程、一蝕刻鑽孔製程或一機械鑽孔製程。接著，進行一電鍍製程，將一導電材料填入上述開口中，以形成介層孔插塞408a和介層孔插塞408b，其中上述介層孔插塞408a和介層孔插塞408b將第一導線404a和第一導線404b互連至後續形成的第二導線410a和第二導線410b。在本實施例中，上述鑽孔製程和電鍍製程係同時且分別於上述第一基座材料層406a和第二基座材料層406b上進行。
接著，請再參考第5c圖，分別於上述第一基座材料層406a的第一表面412上和第二基座材料層406b的第一表面414上形成複數個第二導線410a~410b。如第5c圖所示，上述第一基座材料層406a的第一表面412和第二基座材料層406b的第一表面414分別遠離上述載板400的頂面401和底面403。可利 用一電鍍製程和一非等向性蝕刻製程形成第二導線410a和第二導線410b。上述電鍍製程和非等向性蝕刻製程係同時於上述第一基座材料層406a的第一表面412上和第二基座材料層406b的第一表面414上進行。在本發明一實施例中，電鍍製程可包括一有電電鍍製程。在本發明一實施例中第二導線410a和第二導線410b可包括銅。在本發明一實施例中，第二導線410a和第二導線410b的寬度可設計為大於5μm。然而，應注意導線的寬度並無限制。對於不同的設計，如果有需要的話，導線的寬度可以小於5μm。在本實施例中，上述非等向性蝕刻製程可精確地控制第二導線410a和第二導線410b的寬度。
接著，如第5d圖和第5e圖所示，將帶有第一導線404a和第二導線410a的第一基座材料層406a以及帶有該第一導線404b和該第二導線410b的第二基座材料層406b分別從如第5c圖所示的上述載板400的頂面401和底面403分離，以形成彼此分離的一第一基座200c和一第二基座200d。接著，請再參考第5d和5e圖，分別從第一基座200c的第二表面416和第二基座200d的第二表面418上移除導電種晶層402a和導電種晶層402b。
如第5d圖和第5e圖所示，第一導線404a和第一導線404b係對齊於第一基座200c的第二表面416和第二基座200d的第二表面418，其中第二表面416和第二表面418分別相對於第一表面412和第一表面414。在本實施例中，係利用雙側基座製程(double-sided base fabricating process)，同時於相對表面上製造第一基座200c和第二基座200d。
在本發明另一實施例中，分離如第5d圖和第5e圖所示的第一基座200c和第二基座200d之後，可選擇性分別於第一基座200c的第二表面416上和第二基座200d的第二表面418上形成具有開口的兩個保護層(passivation layer)或絕緣層(圖未示)。在本實施例中，第一基座200c和第二基座200d的第一導線404a和第一導線404b從開口中暴露出來。具有開口的絕緣層以及如第5d圖/第5e圖所示的第一導線404a/第一導線404b可類似於如第4圖所示的具有開口的絕緣層208以及導線202d。並且，在本實施例中，第一基座200c/第二基座200d和其上的絕緣層可一起視為一多層基座(multilayer base)。
第6a-6e圖為本發明另一實施例之一半導體封裝的製造方法的剖面示意圖。並且，第6e圖顯示本發明另一實施例之半導體封裝500e之剖面示意圖。上述圖式中的各元件如有與第1-4圖、第5a-5e圖所示相同或相似的部分，則可參考前面的相關敍述，在此不做重複說明。在本發明另一實施例中，上述基座可具有一多層結構。如第6a圖所示，提供具有一頂面451之一基座450。接著，如第6b圖所示，於上述基座450的頂面451上形成至少一個導線454。在本發明一實施例中，可利用一電鍍製程和一非等向性蝕刻製程形成導線454。在本發明一實施例中，電鍍製程可包括一有電電鍍製程。在本發明一實施例中，導線454可包括銅。在本發明一實施例中，導線454的寬度可設計大於5μm。然而，應注意導線的寬度並無限制。對於不同的設計，如果有需要的話，導線的寬度可以小於5μm。在本實施例中，上述非等向性蝕刻製程可精確地控制導線454的寬 度。
接著，如第6c圖所示，進行一堆疊製程，於上述基座450的頂面451上設置一額外絕緣材料456。並且，上述額外絕緣材料456覆蓋導線454的頂面460和側壁462。
接著，請參考第6d圖，進行一鑽孔製程，以形成穿過上述額外絕緣材料456的至少一開口458，以定義後續形成的導電結構的位置，上述導電結構例如可為一銅凸塊結構或一焊錫凸塊結構。在本發明一實施例中，上述鑽孔製程包括一雷射鑽孔製程、一蝕刻鑽孔製程或一機械鑽孔製程。在本實施例中，導線454的頂面460會從上述額外絕緣材料456的開口458中暴露出來。
接著，請參考第6e圖，進行一接合製程，將一半導體元件300藉由導電結構222固接於基座450。上述圖式中的半導體元件300和導電結構222之元件如有與第1-4圖所示相同或相似的部分，則可參考前面的相關敍述，在此不做重複說明。進行接合製程之後，導電結構222係設置穿過上述額外絕緣材料456的開口458，且僅接觸至導線454的頂面460。接著，可於半導體元件300和上述額外絕緣材料456之間的一間隙中導入一底膠填充材質或底膠230。在本發明一實施例中，底膠填充材質或底膠230可包括毛細底膠填充材質(capillary underfill，CUF)、成型底膠填充材質(molded underfill，MUF)、非導電性絕緣膠(nonconductive paste，NCP)、非導電性絕緣膜(nonconductive film，NCF)或上述任意組合。最後，上述基座450、上述額外絕緣材料456、上述半導體元件300、上述導線 454和上述導電結構222一起形成一半導體封裝500e。
本發明實施例係提供一種半導體封裝。上述半導體封裝係設計包括內嵌於一基座(例如為印刷電路板(PCB))中的導線。上述導線具有一頂面，上述頂面可位於上述基座的一表面的上方、下方或對齊上述基座的一表面，以改善用於高密度半導體封裝的繞線能力。並且，上述導線的寬度可設計大於5μm。再者，上述基座可包括一單一層結構或一多層結構。本發明實施例也提供一種用於一半導體封裝的一基座的製造方法。在本發明一實施例中，上述方法可同時於一載板的兩側製造兩個基座。並且，導線內嵌於上述基座中。再者，可利用一電鍍製程和一非等向性蝕刻製程形成導線，且上述非等向性蝕刻製程可精確地控制上述導線的寬度。在本發明另一實施例中，上述方法可製造包括一單一層結構或一多層結構的一基座，以增加設計選擇。在本發明另一實施例中，上述方法包括提供一載板；於載板上形成至少一個導線；於載板上形成一額外絕緣材料；以及於額外絕緣材料上定義圖案，其中該圖案係形成於該至少一導線上。
雖然本發明已以實施例揭露於上，然其並非用以限定本發明，任何熟習此項技藝者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
500b‧‧‧半導體封裝
200‧‧‧基座
202b‧‧‧導線
204b‧‧‧側壁
206b‧‧‧底面
212b‧‧‧頂面
214‧‧‧元件貼附面
216‧‧‧銅層
218‧‧‧導電緩衝層
220‧‧‧焊錫蓋層
222‧‧‧導電結構
230‧‧‧底膠填充材質或底膠
300‧‧‧半導體元件
301‧‧‧半導體主體
302‧‧‧絕緣層
304‧‧‧金屬焊墊
306‧‧‧凸塊下金屬層
W1‧‧‧寬度

Claims (26)

  1. 一種半導體封裝，包括：一導線，內嵌於一基座中；以及一半導體元件，藉由一導電結構固接於該導線上。
  2. 如申請專利範圍第1項所述之半導體封裝，其中該導線的寬度大於5μm。
  3. 如申請專利範圍第1項所述之半導體封裝，其中該導線具有一頂面，該頂面位於該基座的一表面的上方、下方或對齊該基座的該表面。
  4. 如申請專利範圍第1項所述之半導體封裝，更包括：一底膠填充材質，位於該基座和該半導體元件之間。
  5. 如申請專利範圍第4項所述之半導體封裝，其中該底膠填充材質包括一毛細底膠填充材質、一成型底膠填充材質、一非導電性絕緣膠、一非導電性絕緣膜或上述組合。
  6. 如申請專利範圍第1項所述之半導體封裝，更包括：一絕緣層，具有一開口，該絕緣層設置於該基座上且位於該基座之一元件貼附面的上方，其中該導線從該開口中暴露出來。
  7. 如申請專利範圍第1項所述之半導體封裝，其中該導電結構接觸該導線。
  8. 如申請專利範圍第1項所述之半導體封裝，其中該導電結構僅接觸該導線的一頂面。
  9. 如申請專利範圍第1項所述之半導體封裝，其中該導電結構包裹該導線的一頂面和一側壁的一部分。
  10. 如申請專利範圍第1項所述之半導體封裝，其中該導電結構連接該基座的至少一部分。
  11. 如申請專利範圍第1項所述之半導體封裝，其中該導電結構包括一導電凸塊結構、一導線結構或一導電膠結構。
  12. 如申請專利範圍第11項所述之半導體封裝，其中該導電凸塊結構包括一銅凸塊結構或一焊錫凸塊結構。
  13. 如申請專利範圍第1項所述之半導體封裝，其中該導電結構由一金屬堆疊構成，該金屬堆疊包括一凸塊下金屬層、一銅層和一焊錫蓋層。
  14. 如申請專利範圍第13項所述之半導體封裝，其中該導電結構更包括一導電緩衝層，位於該銅層和該焊錫蓋層之間。
  15. 如申請專利範圍第1項所述之半導體封裝，其中該半導體元件包括一晶片、一被動構件、一封裝或一晶圓級封裝。
  16. 如申請專利範圍第1項所述之半導體封裝，其中該基座包括一單一層結構或一多層結構。
  17. 一種半導體封裝，包括：一導線，該導線的一頂面和一側壁的至少一部分連接至一基座；以及一半導體元件，藉由一導電結構固接於該導線上。
  18. 一種半導體封裝基座的製造方法，包括下列步驟：提供一載板，該載板的一頂面和一底面上具有複數個導電種晶層；分別於該些導電種晶層上形成複數個第一導線；將一第一基座材料層和一第二基座材料層分別堆疊於該些 導電種晶層上，且覆蓋該些第一導線；分別於該第一基座材料層的一第一表面和該第二基座材料層的一第一表面上形成複數個第二導線，其中該第一基座材料層的該第一表面和該第二基座材料層的該第一表面分別遠離該載板的該頂面和該底面；以及將帶有該些第一導線和該些第二導線的該第一基座材料層以及將帶有該些第一導線和該些第二導線的該第二基座材料層分別從該載板的該頂面和該底面分離，以形成一第一基座和一第二基座。
  19. 如申請專利範圍第18項所述之半導體封裝基座的製造方法，其中該製造方法更包括：進行一鑽孔製程，以形成穿過該第一基座材料層和該第二基座材料層的開口；以及在形成該些第二導線之前，進行一電鍍製程，將一導電材料填入該開口中形成一介層孔插塞以用於將該些第一導線互連至該些第二導線。
  20. 如申請專利範圍第19項所述之半導體封裝基座的製造方法，其中該鑽孔製程包括一雷射鑽孔製程、一蝕刻鑽孔製程或一機械鑽孔製程，其中該電鍍製程包括一有電電鍍製程。
  21. 如申請專利範圍第18項所述之半導體封裝基座的製造方法，其中利用一電鍍製程和一非等向性蝕刻製程形成該些第一導線和該些第二導線。
  22. 如申請專利範圍第18項所述之半導體封裝基座的製造方法，其中該製造方法更包括： 從該第一基座的一第二表面和該第二基座的一第二表面上移除該些導電種晶層。
  23. 如申請專利範圍第18項所述之半導體封裝基座的製造方法，更包括：分別於該第一基座和該第二基座上形成具有開口的一絕緣層，其中該第一基座和該第二基座的該些第一導線從該些開口中暴露出來。
  24. 如申請專利範圍第18項所述之半導體封裝基座的製造方法，其中該第一基座和該第二基座的該些第一導線對齊該第一基座的一第二表面和該第二基座的一第二表面，且其中該第一基座的該第二表面和該第二基座的該第二表面分別相對於該第一基座的該第一表面和該第二基座的該第一表面。
  25. 如申請專利範圍第18項所述之半導體封裝基座的製造方法，其中該些第一導線的寬度大於5μm。
  26. 一種半導體封裝基座的製造方法，包括下列步驟：提供一載板；於該載板上形成至少一導線；於該載板上形成一額外絕緣材料；以及於該額外絕緣材料上定義圖案，其中該圖案係形成於該至少一導線上。
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US10573615B2 (en) 2020-02-25
US20140151867A1 (en) 2014-06-05
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US11469201B2 (en) 2022-10-11
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US10580747B2 (en) 2020-03-03

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