TW201323376A - 可固化胺、羧酸助熔劑組成物及焊接方法 - Google Patents

可固化胺、羧酸助熔劑組成物及焊接方法 Download PDF

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TW201323376A
TW201323376A TW101135052A TW101135052A TW201323376A TW 201323376 A TW201323376 A TW 201323376A TW 101135052 A TW101135052 A TW 101135052A TW 101135052 A TW101135052 A TW 101135052A TW 201323376 A TW201323376 A TW 201323376A
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group
acid
alkyl
substituted
flux composition
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TW101135052A
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TWI438177B (zh
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亞文Ｖ 帝何伯
馬克Ｒ 溫寇
麥可Ｋ 嘉拉夫
何金生
劉向前
阿哈爾 阿可伯 佩拉
葛蘭 羅賓森
蘭Ａ 湯米森
大衛Ａ 弗萊明
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羅門哈斯電子材料有限公司
安古斯化學公司
陶氏全球科技責任有限公司
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    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
    • B23K35/3612—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest with organic compounds as principal constituents
    • B23K35/3618—Carboxylic acids or salts
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
    • B23K35/362—Selection of compositions of fluxes
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    • C07—ORGANIC CHEMISTRY
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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Abstract

提供一種可固化助熔劑組成物，包括下列初始組分：每分子具有至少兩個環氧乙烷基之樹脂組分；羧酸；以及式I所示之胺助熔劑：□以及視需要之固化劑。亦提供一種使用該可固化助熔劑組成物焊接電氣接點的方法。

Description

可固化胺、羧酸助熔劑組成物及焊接方法
本發明係關於一種可固化助熔劑組成物，包括下列作為初始組分：每分子具有至少兩個環氧乙烷基之樹脂組分；羧酸；以及，式I所示之胺助熔劑，其中，R1、R2、R3和R4係獨立選自氫、經取代之C1-80烷基、未經取代之C1-80烷基、經取代之C7-80芳基烷基和未經取代之C7-80芳基烷基；其中R7和R8係獨立選自C1-20烷基、經取代之C1-20烷基、C6-20芳基和經取代之C6-20芳基；或其中R7和R8連同其所附接之碳一起形成視需要經C1-6烷基取代之C3-20環烷基環；其中R10和R11係獨立選自C1-20烷基、經取代之C1-20烷基、C6-20芳基和經取代之C6-20芳基；或其中R10和R11連同其所附接之碳一起形成視需要經C1-6烷基取代之C3-20環烷基環；以及，其中R9係選自氫、C1-30烷基、經取代之C1-30烷基、C6-30芳基和經取代之C6-30芳基；以及視需要之固化劑。本發明復關於一種使用該可固化助熔劑組成物焊接電氣接點的方法。
助熔劑為製造電氣裝置之重要工具，包含安裝電子組 件(例如，半導體晶片)至基板(例如，印刷電路板，印刷線路板，有機基板，矽中介片，其他半導體晶片)。
覆晶(flip chip)方法是一種日趨重要之安裝電子組件至基板的方法。在將覆晶方法用於安裝半導體晶片至基板的一個例子中，係在位於半導體晶片上之接點(例如，接觸墊、接觸針)提供焊料(例如，如焊球)。或者，係在位於基板上之相應接點(例如，接觸墊、鍍銅之通孔)提供焊料。將助熔劑施加至焊料以移除可能出現於焊料表面或半導體晶片或基板上之接點表面之氧化層。助熔劑亦於回焊(reflow)期間用以提供藉由焊料增進接點之濕潤性。之後半導體晶片上之焊料或接點係與基板上之相應接點或焊料產生物理性接觸。之後加熱於半導體晶片上和/或基板上之焊料至回焊。冷卻後，形成半導體晶片與基板間的互連(inter connection)。典型地，此互連將隨後被封裝(例如，用環氧樹脂)以強化半導體晶片/基板之組合件可靠度。也就是說，該封裝樹脂幫助釋放可能由半導體晶片與基板間熱膨脹係數不同所產生之應變。
上述製程中所用助熔劑實際上的選擇相當重要。在常見的多種助熔劑之使用上將產生可能減低產品裝置可靠度之非所欲離子殘留物。因此，該等非所欲離子殘留物必須自裝置清出。然而，該等裝置的清洗卻受阻於下述事實：於已焊接之互連形成後，半導體晶片與基板(例如，印刷電路板)間之距離非常小。這使得移除任何產生於焊接製程期間之非所欲離子殘留物的製程相當複雜。
往常，可固化有機材料(典型含有有機或無機填料)係被用於填充半導體晶片與基板間之間隙和強化電氣互連半導體晶片與基板之焊接接合(solder joint)。這底填充劑材料有賴於毛細作用以填入間隙中。
半導體晶片與基板間之間隙必須完全填充，以提供產品電氣組件之最大可靠度。然而，當可固化有機材料施加至半導體晶片與基板間之間隙的外周時，於間隙中央區域可能仍留有空泡。隨著電氣組件尺寸縮減(即為，間隙高度變得較小)，毛細作用的界限效應造成未被填滿之中央區域的擴大。
為了解決這個問題，有些人於相當於接近間隙區域中央之基板處提供孔洞。之後底填充劑材料經由此孔洞補充至間隙與至外周。然而，此項嘗試要求裝置設計提供無線路區域以做為中央孔洞位置。
另一種解決底填充劑問題的嘗試來自稱為「無流動」製程，其中，底填充劑材料係於焊接前預施加至半導體晶片與/或基板上。此材料隨後於焊接形成互連組件時佔據半導體晶片與基板間之間隙並固化(典型藉由加熱實施)。
在該等無流動製程中，已知利用提供助熔與封裝兩功能之底填充劑材料。該等材料減少了組裝半導體晶片於基板上所需之步驟數目。也就是說，這些材料將助熔與底填充劑步驟合而為一而且消去了清洗步驟的需求。
Pennisi等人已於美國專利5,128,746號中揭露一種該類無流動底填充劑材料。Pennisi等人揭露一種用於回焊焊 接電氣組件與基板之具有助熔劑的可熱固化黏著劑，其包括能自電子組件或基板上去除氧化物塗層且於加熱至焊接溫度時會至少部分固化之黏著劑，前述黏著劑基本上由熱固性樹脂，含量足夠自組件或基板移除氧化物塗層的助熔劑，以及於可熱固化黏著劑加熱時與熱固性樹脂反應並固化之固化劑所組成。
陳等人於美國專利7,303,944案中揭露另一種無流動底填充劑嘗試。陳等人揭露一種包括下述步驟之方法：在置於基板表面上之接觸墊上施加含有松脂化合物之酐加成物作為助熔劑之底填充劑材料；相對於基板，以複數個焊料凸塊係置於無流動底填充劑材料內之方式將微電子裝置(該微電子裝置具有主動表面，以及置於複數個接觸墊上之複數個焊料凸塊，且該複數個接觸墊於主動表面上)；以助熔劑自焊料凸塊移除金屬氧化物；藉由加熱溫度至大於焊料熔點溫度使焊料凸塊回焊；以及固化底填充劑材料。
許多常見的無流動底填充劑材料(如該等註明者)係建立於環氧基化學且有賴於羧酸與酸酐提供助熔效果。此外，有機醇也偶爾作為促進劑，此係鑒於其與酸酐反應形成羧酸助熔劑。然而，羧酸於焊接與封裝製程期間往往會揮發。此係非所欲者，因為此現象可能在半導體晶片與基板間的間隙產生空泡而減低產品裝置的可靠性。因此，仍有對於促進製造電子組件中之可靠的經焊接與封裝之互連(例如，於半導體晶片與印刷電路板間的互連)的可固化助熔劑材料的需求。
本發明提供一種可固化助熔劑組成物，包括下列作為初始組分：每分子具有至少兩個環氧乙烷基之樹脂組分；羧酸；式I所示之胺助熔劑：
其中，R1、R2、R3和R4係獨立選自氫、經取代之C1-80烷基、未經取代之C1-80烷基、經取代之C7-80芳基烷基和未經取代之C7-80芳基烷基；其中R7和R8係獨立選自C1-20烷基、經取代之C1-20烷基、C6-20芳基和經取代之C6-20芳基；或其中R7和R8連同其所附接之碳一起形成視需要經C1-6烷基取代之C3-20環烷基環；其中R10和R11係獨立選自C1-20烷基、經取代之C1-20烷基、C6-20芳基和經取代之C6-20芳基；或其中R10和R11連同其所附接之碳一起形成視需要經C1-6烷基取代之C3-20環烷基環；以及，其中R9係選自氫、C1-30烷基、經取代之C1-30烷基、C6-30芳基和經取代之C6-30芳基；以及視需要之固化劑。
本發明提供一種形成封裝之冶金接合的方法，包括：提供本發明之可固化助熔劑組成物；提供複數個第一電氣接點；提供複數個相應的第二電氣接點；提供焊料；將該可固化助熔劑組成物施加至該複數個第一電氣接點和該複 數個相應的第二電氣接點中的至少一者；將該複數個第一電氣接點臨近該複數個相應的第二電氣接點放置；加熱該焊料超過其回焊溫度，以形成熔融焊料並使該複數個第一電氣接點和該複數個相應的第二電氣接點暴露於該熔融焊料；以該熔融焊料自該複數個第一電氣接點和該複數個相應的第二電氣接點置換該可固化助熔劑組成物，並於該複數個第一電氣接點和該複數個相應的第二電氣接點間形成複數個電氣互連；以及，固化該樹脂組分，封裝該複數個電氣互連。
本發明之可固化助熔劑組成物係設計成促進製造具有已焊接和封裝之電氣互連之電氣組件。舉例來說，本發明之可固化助熔劑組成物係較佳經設計以作為用於半導體裝置製造之無流動底填充劑配方。
在本文與隨附的申請專利範圍中所用之「無流動底填充劑組成物」一詞意指具有焊料助熔活性與潛在固化以促進已焊接之互連的封裝之可固化助熔劑組成物。
在本文與隨附的申請專利範圍中關於可固化助熔劑組成物(在單包裝系統中)所用之「儲存安定性」一詞意指於55℃儲存一週後可固化助熔劑組成物之黏度增加少於5%，其中，黏度係由Brookfield DV-I+黏度計於20℃使用設定於100rpm之Brookfield #S00轉軸測定。
在本文與隨附的申請專利範圍中關於可固化助熔劑組成物所用之「儲存安定」一詞意指可固化助熔劑組成物具有儲存安定性。
本發明之可固化助熔劑組成物包括(基本上組成為)下列作為初始組分：每分子含有至少兩個環氧乙烷基之樹脂組分；羧酸；式I所示之胺助熔劑；以及，視需要地固化劑。較佳地，該可固化助熔劑組成物含有少於10wt%加熱至250℃時會揮發之材料，係以熱重分析(thermogravimetric analysis，TGA)自25℃起使用升溫速率10℃/分鐘測定。源自底填充劑組成物之氣體之發生往往造成半導體晶圓與基板間之間隙有空泡，而導致關於產品組裝裝置之潛在可靠性問題。
本發明可固化助熔劑組成物所用之樹脂組分，包括每分子含有至少兩個環氧乙烷基之材料。較佳地，所使用樹脂組分係每分子含有至少兩個環氧乙烷基之環氧樹脂，舉例來說，經取代或未經取代之脂肪族、環脂肪族、芳族和雜環之聚環氧化物。更佳地為該樹脂組分係選自下列之環氧樹脂：雙酚型環氧樹脂(例如，雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂)，芳族二縮水甘油醚類；芳族多官能基縮水甘油醚類；脂肪族二縮水甘油醚類和脂肪族多官能基縮水甘油醚類。再更佳地該樹脂組分係為雙酚型環氧樹脂。最佳地樹脂組分係為雙酚A型環氧樹脂。該可固化助熔劑組成較佳包括10至99wt%(更佳地20至90wt%，再更佳地30至75wt%，最佳地30至50wt%)樹脂 組分。
本發明可固化助熔劑組成物所用之樹脂組分，視需要地復包含每分子具有至少三個環氧乙烷基之材料。每分子具有至少三個環氧乙烷基之材料係視需要地包含於樹脂組分中以增加固化之樹脂產物之玻璃轉化溫度和減少配方之膠化時間。
較佳地，本發明助熔劑組成物所用之羧酸，係選自C8-20脂肪族單羧酸、C2-20脂肪族二羧酸、C6-20芳族羧酸、以及其混合物。更佳地，本發明助熔劑組成物所用之羧酸，係選自辛酸、壬酸、十一烷酸、十二烷酸、十三烷酸、十四烷酸、十五烷酸、十六烷酸、十七烷酸、硬脂酸、羥基硬脂酸、油酸、亞麻油酸、α-次亞麻油酸、二十烷酸、草酸、丙二酸、琥珀酸、蘋果酸、戊二酸、己二酸、庚二酸、辛二酸、苯甲酸、鄰苯二甲酸、間苯二甲酸、對苯二甲酸、半蜜臘酸(hemimellitic acid)、偏苯三甲酸、均苯三甲酸、1,2,3,5-苯四甲酸、1,2,3,4-苯四甲酸、1,2,4,5-苯四甲酸、蜜臘酸；甲基苯甲酸；茬甲酸、2,3-二甲基苯甲酸、均三甲基苯甲酸、1,2,3,4-苯四甲酸、肉桂酸、水楊酸、苯甲酸(如，苯甲酸、2,3-二羥基苯甲酸、2,4-二羥基苯甲酸、2,5-二羥基苯甲酸(龍膽酸)、2,6-二羥基苯甲酸、3,5-二羥基苯甲酸、3,4,5-三羥基苯甲酸(沒食子酸))、萘甲酸(如，萘甲酸、1,4-二羥基-2-萘甲酸、3,5-二羥基-2-萘甲酸、3,7-二羥基-2-萘甲酸))、酸式酚酞、雙酚酸、以及其混合物。仍更佳地，本發明助熔劑組成物所用之羧酸，係選自萘甲酸 (如，萘甲酸、1,4-二羥基-2-萘甲酸、3,5-二羥基-2-萘甲酸、3,7-二羥基-2-萘甲酸)、硬脂酸、羥基硬脂酸、油酸、亞麻油酸、α-次亞麻油酸、和二十烷酸、以及其混合物。尚仍更佳地，本發明助熔劑組成物所用之羧酸，係選自萘甲酸(如，萘甲酸、1,4-二羥基-2-萘甲酸、3,5-二羥基-2-萘甲酸、3,7-二羥基-2-萘甲酸)、硬脂酸、羥基硬脂酸、油酸、以及其混合物。最佳地，本發明助熔劑組成物所用之羧酸，係選自萘甲酸、C18羧酸以及其混合物、其中萘甲酸係選自1,4-二羥基-2-萘甲酸、3,5-二羥基-2-萘甲酸、以及C18羧酸係選自硬脂酸、羥基硬脂酸、油酸。
本發明可固化助熔劑組成物之胺助熔劑係依據式I所示，其中，R1、R2、R3和R4係獨立選自氫、經取代之C1-80烷基、未經取代之C1-80烷基、經取代之C7-80芳基烷基和未經取代之C7-80芳基烷基(較佳地，其中，R1、R2、R3和R4係獨立選自氫、經取代之C1-20烷基、未經取代之C1-20烷基、經取代之C7-30芳基烷基和未經取代之C7-30芳基烷基)；其中R7和R8係獨立選自C1-20烷基、經取代之C1-20烷基、C6-20芳基和經取代之C6-20芳基(或其中R7和R8連同其所附接之碳一起形成視需要經C1-6烷基取代之C3-20環烷基環)；其中R10和R11係獨立選自C1-20烷基、經取代之C1-20烷基、C6-20芳基和經取代之C6-20芳基(或其中R10和R11連同其所附接之碳一起形成視需要經C1-6烷基取代之C3-20環烷基環)；以及，其中R9係選自氫、C1-30烷基、經取代之C1-30烷基、C6-30芳基和經取代之C6-30芳基。較佳地，R1、R2、R3和R4中的 0至3者為氫。該依據式I之胺助熔劑之R1、R2、R3、R4、R7、R8、R9、R10和R11基係較佳選擇為：提供用於給定應用之所欲流變性質之胺助熔劑促進與羧酸錯合之助熔劑之形成；使胺助熔劑與用於遞送至一個或多個待焊表面之所欲溶劑套組相容；以及，視需要地使胺助熔劑與給定用於焊接後以形成經封裝之焊接接合之封裝組成物(例如，環氧樹脂)相容(例如，用於常見之覆晶底填充劑之應用)。此外，依據式I之胺助熔劑之該R1、R2、R3、R4、R7、R8、R9、R10和R11基團係較佳經選擇以提供胺助熔劑125℃沸點溫度(更佳地250℃)，係由微分掃描式熱卡法自起25℃起以升溫速率10℃/分鐘測定者。
較佳地，用於本發明可固化助熔劑組成物之胺助熔劑係依據式I所示；其中，R1、R2、R3和R4係獨立選自氫、經取代之C1-80烷基、未經取代之C1-80烷基、經取代之C7-80芳基烷基和未經取代之C7-80芳基烷基；其中，該經取代之C1-80烷基與該經取代之C7-80芳基烷基上之取代基係選自-OH基、-OR5基、-COR5-基、-COR5基、-C(O)R5基、-CHO基、-COOR5基、-OC(O)OR5基、-S(O)(O)R5基、-S(O)R5基、-S(O)(O)NR5 2基、-OC(O)NR6 2基、-C(O)NR6 2基、-CN基、-N(R6)-基和-NO2基中至少一者(較佳地係為-OH基、-OR5基、-COR5-基、-COR5基、-C(O)R5基、-CHO基、-COOR5基、-OC(O)OR5基、-S(O)(O)R5基、-S(O)R5基、-S(O)(O)NR5 2基、-OC(O)NR6 2基、-C(O)NR6 2基、-CN基和-NO2基中至少一者)；其中，R5係選自C1-28烷基、C3-28環烷基、C6-15芳基、 C7-28芳基烷基和C7-28烷基芳基；其中，R6係選自氫、C1-28烷基、C3-28環烷基、C6-15芳基、C7-28芳基烷基和C7-28烷基芳基。該經取代之C1-80烷基與該經取代之C7-80芳基烷基可含有該等取代基之組合。舉例來說，該經取代之C1-80烷基與該經取代之C7-80芳基烷基可：含有多於一個相同類型取代基(例如，兩個-OH基)；含有多於一種類型取代基(例如，一個-OH基與一個-COR5-基)；含有多於一種類型取代基與多於一個相同類型取代基(例如，兩個-OH基與一個-OR5基)。
較佳地，用於本發明可固化助熔劑組成物之胺助熔劑係依據式I所示；其中R7和R8係獨立選自C1-20烷基、經取代之C1-20烷基、C6-20芳基和經取代之C6-20芳基(或其中R7和R8連同其所附接之碳一起形成視需要經C1-6烷基取代之C3-20環烷基環)；其中經取代之C1-20烷基和經取代之C6-20芳基上之取代基係選自-OH基、苯基、C1-14烷基、-OR12基、-COR12-基、-COR12基、-C(O)R12基、-CHO基、-COOR12基、-OC(O)OR12基、-S(O)(O)R12基、-S(O)R12基、-S(O)(O)NR12 2基、-OC(O)NR13 2基、-C(O)NR13 2基、-CN基、-N(R13)-基和-NO2基中至少一者(較佳地係-OH基、-OR12基、-COR12-基、-COR12基、-C(O)R12基、-CHO基、-COOR12基、-OC(O)OR12基、-S(O)(O)R12基、-S(O)R12基、-S(O)(O)NR12 2基、-OC(O)NR13 2基、-C(O)NR13 2基、-CN基和-NO2基中至少一者)；其中R12係選自C1-19烷基、C3-19環烷基、C6-19芳基、C7-19芳基烷基和C7-19烷基芳基；且其中，R13係選自氫、 C1-19烷基、C3-19環烷基、C6-19芳基、C7-19芳基烷基和C7-19烷基芳基。該經取代之C1-20烷基和經取代之C6-20芳基可含有該等取代基之組合。例如，經取代之C1-20烷基和經取代之C6-20芳基可：含有多於一個相同類型取代基(例如，兩個-OH基)；含有多於一種類型取代基(例如，一個-OH基與一個-COR12-基)；含有多於一種類型取代基與多於一個相同類型取代基(例如，兩個-OH基與一個-OR12基)。
較佳地，用於本發明可固化助熔劑組成物之胺助熔劑係依據式I所示；其中R10和R11係獨立選自C1-20烷基、經取代之C1-20烷基、C6-20芳基和經取代之C6-20芳基(或其中R10和R11連同其所附接之碳一起形成視需要經C1-6烷基取代之C3-20環烷基環)；以及其中經取代之C1-20烷基和經取代之C6-20芳基上之取代基係選自-OH基、-OR12基、-COR12-基、-COR12基、-C(O)R12基、-CHO基、-COOR12基、-OC(O)OR12基、-S(O)(O)R12基、-S(O)R12基、-S(O)(O)NR12 2基、-OC(O)NR13 2基、-C(O)NR13 2基、-CN基、-N(R13)-基和-NO2基中至少一者(較佳地係-OH基、-OR12基、-COR12-基、-COR12基、-C(O)R12基、-CHO基、-COOR12基、-OC(O)OR12基、-S(O)(O)R12基、-S(O)R12基、-S(O)(O)NR12 2基、-OC(O)NR13 2基、-C(O)NR13 2基、-CN基和-NO2基中至少一者)；其中R12係選自C1-19烷基、C3-19環烷基、C6-19芳基、C7-19芳基烷基和C7-19烷基芳基；且其中，R13係選自氫、C1-19烷基、C3-19環烷基、C6-19芳基、C7-19芳基烷基和C7-19烷基芳基。該經取代之C1-20烷基和經取代之C6-20芳基可含 有該等取代基之組合。例如，經取代之C1-20烷基和經取代之C6-20芳基可：含有多於一個相同類型取代基(例如，兩個-OH基)；含有多於一種類型取代基(例如，一個-OH基與一個-COR12-基)；含有多於一種類型取代基與多於一個相同類型取代基(例如，兩個-OH基與一個-OR12基)。
較佳地，本發明之可固化助熔劑組成物之胺助熔劑係依據式1所示；其中，R9係選自氫、C1-30烷基、經取代之C1-30烷基、C6-30芳基和經取代之C6-30芳基；且其中，經取代之C1-30烷基和經取代之C6-30芳基上之取代基係選自-OH基、-OR14基、-COR14-基、-COR14基、-C(O)R14基、-CHO基、-COOR14基、-OC(O)OR14基、-S(O)(O)R14基、-S(O)R14基、-S(O)(O)NR14 2基、-OC(O)NR15 2基、-C(O)NR15 2基、-CN基、-N(R15)-基和-NO2基中至少一者(較佳地係選自-OH基、-OR14基、-COR14-基、-COR14基、-C(O)R14基、-CHO基、-COOR14基、-OC(O)OR14基、-S(O)(O)R14基、-S(O)R14基、-S(O)(O)NR14 2基、-OC(O)NR15 2基、-C(O)NR15 2基、-CN基和-NO2基中至少一者)；其中，R14係選自C1-29烷基、C3-29環烷基、C6-29芳基、C7-29芳基烷基和C7-29烷基芳基；且其中，R15係選自氫、C1-29烷基、C3-29環烷基、C6-29芳基、C7-29芳基烷基和C7-29烷基芳基。該經取代之C1-30烷基和經取代之C6-30芳基可含有該等取代基之組合。例如，經取代之C1-30烷基和經取代之C6-30芳基可：含有多於一個相同類型取代基(例如，兩個-OH基)；含有多於一種類型取代基(例如，一個-OH基與一個-COR14-基)；含有多於一種類型取代基與 多於一個相同類型取代基(例如，兩個-OH基與一個-OR14基)。
更佳地，本發明之可固化助熔劑組成物之胺助熔劑係依據式1所示；其中，R1、R2、R3和R4係獨立選自氫、經取代之C1-20烷基、未經取代之C1-20烷基、經取代之C7-30芳基烷基和未經取代之C7-30芳基烷基；且其中，經取代之C1-20烷基和經取代之C7-30芳基烷基上之取代基係選自-OH基、-OR16基、-COR16-基、-COR16基、-C(O)R16基、-CHO基、-COOR16基、-OC(O)OR16基、-S(O)(O)R16基、-S(O)R16基、-S(O)(O)NR16 2基、-OC(O)NR17 2基、-C(O)NR17 2基、-CN基、-N(R17)-基和-NO2基中至少一者(較佳地係為-OH基、-OR16基、-COR16-基、-COR16基、-C(O)R16基、-CHO基、-COOR16基、-OC(O)OR16基、-S(O)(O)R16基、-S(O)R16基、-S(O)(O)NR16 2基、-OC(O)NR17 2基、-C(O)NR17 2基、-CN基和-NO2基中至少一者)；其中，R16係選自C1-19烷基、C3-19環烷基、C6-15芳基、C7-19芳基烷基和C7-19烷基芳基；其中，R17係選自氫、C1-19烷基、C3-19環烷基、C6-15芳基、C7-19芳基烷基和C7-19烷基芳基；其中，R7和R8係獨立選自C1-4烷基和C1-4羥基烷基(更佳地，其中，R7和R8係獨立選自甲基和羥基甲基；最佳地，其中，R7和R8係皆為甲基)；其中，R10和R11係獨立選自C1-4烷基和C1-4羥基烷基(更佳地，其中，R10和R11係獨立選自甲基和羥基甲基；最佳地，其中，R10和R11係皆為甲基)；且其中，R9係選自氫、C1-10烷基、C1-10羥基烷基、苯基、羥基苯基、C7-10烷基芳基、 C7-10芳基烷基和萘基(更佳地，其中，R9係選自氫、C1-4烷基、C1-4羥基烷基、苯基、羥基苯基、C7烷基芳基和C7芳基烷基；最佳地，其中，R9係選自甲基和苯基)。R1、R2、R3和R4之選擇中之該經取代之C1-20烷基和經取代之C7-30芳基烷基可含有該等取代基之組合。例如，經取代之C1-20烷基和經取代之C7-30芳基烷基：含有多於一個相同類型取代基(例如，兩個-OH基)；含有多於一種類型取代基(例如，一個-OH基與一個-COR16-基)；含有多於一種類型取代基與多於一個相同類型取代基(例如，兩個-OH基與一個-OR16基)。較佳地，R1、R2、R3和R4中的0至3者為氫。更佳地，R1、R2、R3和R4中的1至3者為氫。再更佳地，R1、R2、R3和R4中的2至3者為氫。尚更佳地，R1、R2、R3和R4中的2者為氫。最佳地，R1與R2中的1者為氫且R3和R4中的1者為氫。
又更較佳地，本發明助熔劑組成物所用之胺助熔劑係依據式I所示；其中，R1、R2、R3和R4係獨立選自氫、-CH2CH(OH)R18和-CH2CH(OH)CH2-O-R18基；其中，R18係選自氫、C1-28烷基、C6-15芳基、C7-28芳基烷基和C7-28烷基芳基(較佳地，其中，R18係選自C5-10烷基、C3-10環烷基、C6-15芳基和C7-15烷基芳基；更佳地，其中，R18係選自C8烷基、C7烷基芳基和C10萘基)：其中，R7和R8係獨立選自C1-4烷基和C1-4羥基烷基(更佳地，其中，R7和R8係獨立選自甲基和羥基甲基；最佳地，其中，R7和R8皆為甲基)；其中，R10和R11係獨立選自C1-4烷基和C1-4羥基烷基(更佳 地，其中，R10和R11係獨立選自甲基和羥基甲基；最佳地，其中，R10和R11皆為甲基)；且其中，R9係選自氫、C1-10烷基、C1-10羥基烷基、苯基、羥基苯基、C7-10烷基芳基和C7-10芳基烷基和萘基(更佳地，其中，R9係選自氫、C1-4烷基、C1-4羥基烷基、苯基、羥基苯基、C7烷基芳基和C7芳基烷基；最佳地，其中，R9係選自甲基和苯基)。較佳地，R1、R2、R3和R4中的0至3者為氫。更佳地，R1、R2、R3和R4中的1至3者為氫。又更佳地，R1、R2、R3和R4中的2至3者為氫。再更佳地，R1、R2、R3和R4中的2者為氫。最佳地，R1與R2中的1者為氫且R3和R4中的1者為氫。
尚更佳地，用於本發明可固化助熔劑組成物之胺助熔劑係依據式I；其中，R1、R2、R3和R4係獨立選自氫、-CH2CH(OH)R18和-CH2CH(OH)CH2-O-R18基；其中，R18係選自氫、C1-28烷基、C3-28環烷基、C6-16芳基、C7-28芳基烷基和C7-28烷基芳基(較佳地，其中，R18係選自C5-10烷基、C6-16芳基和C7-15烷基芳基；更佳地，其中，R18係選自C8烷基、C7烷基芳基、萘基、聯苯基和經取代之C12-16聯苯基；最佳地，其中，R18係選自C8烷基、C7烷基芳基和萘基)；其中，R7和R8皆為甲基；其中，R10和R11皆為甲基；且其中，R9係選自甲基和苯基。較佳地，R1、R2、R3和R4中的0至3者為氫。更佳地，R1、R2、R3和R4中的1至3者為氫。又更佳地，R1、R2、R3和R4中的2至3者為氫。再更佳地，R1、R2、R3和R4中的2者為氫。最佳地，R1與R3為氫且R2和R4選自-CH2CH(OH)R18和-CH2CH(OH)CH2-O-R18 基。
較佳地，本發明可固化助熔劑組成物包含作為初始組分之羧酸和式I所式胺助熔劑，其胺助熔劑之胺氮與羧酸之酸含量(-COOH)的當量比為1：1至20：1(更佳為1：1至10：1；最佳為1：1至4：1)。較佳地，當羧酸與式I所式胺助熔劑組合時形成助熔錯合物。較佳地，助熔錯合物為酸-鹼錯合物。較佳地，藉由使用熱重分析(TGA)，自25℃起以升溫速率10℃/分鐘測定，當加熱至230℃時，該助熔錯合物具有質量損失百分率25 wt%(更佳為20 wt%；最佳為15 wt%)。
本發明之可固化助熔劑組成物，視需要地，復包括固化劑。常見之固化劑可與樹脂組分與助熔劑一起使用，限制條件為固化劑可固化樹脂組分。常見之固化劑包含，舉例來說，多官能基酚類、多官能基醇類、胺類、咪唑化合物、酸酐類、有機磷化合物和其鹵化物。較佳地，任何使用之固化劑應為潛在固化劑(即為，於溫度225℃時不會作用而起始樹脂組分之膠化的固化劑)允許焊料回焊時無干擾且促進單包裝系統之可固化助熔劑組成物之儲存安定。
本發明之可固化助熔劑組成物，視需要地復包括溶劑。溶劑係視需要地包含於本發明之可固化助熔劑組成物，以促進樹脂組分和胺助熔劑遞送至一個或多個待焊表面。較佳地，該可固化助熔劑組成物含有1至70wt%溶劑(更佳地，1至35wt%溶劑；最佳地，1至20wt%溶劑)。本發明可固化助熔劑組成物所用之溶劑較佳為選自下列之有機 溶劑：烴類(例如，十二烷、十四烷)；芳香烴類(例如，苯、甲苯、二甲苯、三甲苯、苯甲酸丁酯、十二基苯)；酮類(例如，甲基乙基酮、甲基異丁基酮、環己酮)；醚類(四氫呋喃、1,4-二烷與四氫呋喃、1,3-二氧雜環戊烷、二丙二醇二甲醚)；醇類(例如，2-甲氧基-乙醇、2-丁氧基乙醇、甲醇、乙醇、異丙醇、α-萜品醇、苯甲醇、2-己基癸醇)；酯類(例如，乙酸乙酯、乳酸乙酯、乙酸丁酯、己二酸二乙酯、酞酸二乙酯、二乙二醇單丁基乙酸酯、丙二醇單甲醚乙酸酯、乳酸乙酯、2-羥基異丁酸甲酯、丙二醇單甲醚乙酸酯)；以及，醯胺類(例如，N-甲基吡咯啶酮、N,N-二甲基甲醯胺和N,N-二甲基乙醯胺)；二醇衍生物(例如，賽路蘇、丁基賽路蘇)；二醇類(例如，乙二醇；二伸乙二醇；二伸丙二醇；三伸乙二醇；己二醇；1,5-戊二醇)；二醇醚類(例如，丙二醇單甲醚、甲基卡必醇、丁基卡必醇)；和石油醚溶劑(例如，石油醚、石腦油)。更佳地，本發明可固化助熔劑組成物所用之溶劑係選自甲基乙基酮；2-丙醇；丙二醇單甲醚；丙二醇單甲醚乙酸酯；乳酸乙酯和2-羥基異丁酸甲酯之有機溶劑。最佳地，本發明可固化助熔劑組成物所用之溶劑係為丙二醇單甲醚。
本發明之可固化助熔劑組成物，視需要地復包括增稠劑。較佳地，該可固化助熔劑組成物含有0至30wt%增稠劑。用於本發明可固化助熔劑組成物之增稠劑係可選自非固化性樹脂材料(即，每分子含有之反應性官能基<2)，像是舉例來說，非固化性酚醛樹脂。用於可固化助熔劑組成 物之增稠劑較佳具有高於樹脂組分(於其非固化形態)所具之黏性。當存在時，增稠劑含量可為基於可固化助熔劑組成物總重量之0.1至35wt%。
本發明之可固化助熔劑組成物，視需要地復包括搖變減黏性劑。較佳地，該可固化助熔劑組成物含有1至30wt%搖變減黏性劑。用於本發明可固化助熔劑組成物之搖變減黏性劑可選自脂肪酸醯胺(例如，硬脂醯胺、羥基硬脂酸二醯胺)；脂肪酸脂(例如，蓖麻蠟(castor wax)、蜂蠟、巴西棕櫚蠟)、有機搖變減黏性劑(例如，聚乙二醇、聚環氧乙烷、甲基纖維素、乙基纖維素、羥基乙基纖維素、羥基丙基纖維素、二甘油單油酸酯、去甘油月桂酸酯、十甘油油酸酯、二甘油單月桂酸酯，山梨醇月桂酸脂)、無機搖變減黏性劑(例如，矽石粉末、高嶺土粉末)。較佳地，所用之搖變減黏性劑係選自聚乙二醇和脂肪酸醯胺。
本發明之可固化助熔劑組成物，視需要地復包括無機填料。無機填料係可選自礬土、氫氧化鋁、矽酸鋁、堇青石(cordierite)、矽酸鋰鋁、鋁酸鎂、氫氧化鎂、黏土、滑石、三氧化二銻、五氧化二銻、氧化鋅、膠體氧化矽、熔融矽石、玻璃粉末、石英粉末與玻璃微粒球。當存在時，本發明之所示之可固化助熔劑組成物較佳含有0至70wt%(更佳為，0至35wt%；再更佳為，0至20wt%；最佳為，0.1至20wt%)無機填料。
本發明之可固化助熔劑組成物，視需要地復包括抗氧化劑。當存在時，本發明可固化助熔劑組成物較佳含有0.01 至30wt%(更佳為，0.01至20wt%)抗氧化劑。
本發明之可固化助熔劑組成物，視需要地復包括反應性稀釋劑。較佳地，該視需要地應性稀釋劑具有之黏度應低於樹脂組分(於其非固化形態)所具之黏度。反應性稀釋劑可較佳的選自單官能基環氧化物(例如，C6-28烷基縮水甘油醚類；C6-28脂肪酸縮水甘油酯類；C6-28烷基酚縮水甘油醚類)與特定多官能基環氧化物(例如，三羥甲基丙烷三縮水甘油醚；二縮水甘油基苯胺)。當存在反應性稀釋劑時，其之可用量<50wt%(以樹脂組分之重量為基準)。
本發明之可固化助熔劑組成物，視需要地復包括常見之釋氣劑。釋氣劑被認為可增加焊料回焊時待焊表面之濕潤性。當存在釋氣劑時，基於可固化助熔劑組成物之總重量計，釋氣劑可用量為<1wt%。
本發明之可固化助熔劑組成物，視需要地復包括常見之消泡劑。消泡劑被認為可增加於焊料回焊時待焊表面之濕潤性與減少可固化助熔劑組成物於固化時之將氣體納入之缺陷。當存在消泡劑時，其之用量為<1wt%之可固化助熔劑組成物。
本發明之可固化助熔劑組成物，視需要地復包括常見之黏著促進劑。常見之黏著促進劑包含矽烷(例如縮水甘油氧基丙基三甲氧基矽烷；γ-胺基丙基三乙氧基矽烷；三甲氧基矽基丙基化之異氰脲酯；β-(3,4-環氧基環己基)乙基三乙氧基矽烷；縮水甘油氧基丙基二乙氧基甲基矽烷；β-(3,4-環氧基環己基)乙基三甲氧基矽烷；γ-縮水甘油氧 基丙基三乙氧基矽烷；γ-氫硫基丙基三甲氧基矽烷；N-β-(胺乙基)-γ-胺丙基三甲基矽烷；雙(三甲氧基矽基丙基)胺；和，γ-脲基丙基三乙氧基矽烷。若存在，黏著促進劑可用量為<2wt%之可固化助熔劑組成物。
本發明之可固化助熔劑組成物，視需要地復包括常見之阻燃劑。常見之阻燃劑包含溴化合物(例如，十溴聯苯醚、四溴雙酚A、四溴鄰苯二甲酸酐、三溴酚)；磷化合物(例如，磷酸三甲苯酯、磷酸三(二甲苯)酯、磷酸甲酚二苯酯)；金屬氫氧化物(例如，氫氧化鎂、氫氧化鋁)；紅磷與其改質物；銻化合物(例如，三氧化二銻、五氧化二銻)；以及，三化合物(例如，三聚氰胺、氰脲酸、三聚氰胺氰脲酸酯)。若存在，阻燃劑可用量為0.01至35wt%(較佳地0.01至10wt%)之可固化助熔劑組成物。
本發明之可固化助熔劑組成物，視需要地復包括選自消光劑、染色劑、分散安定劑、螫合劑、熱塑性粒子、截UV劑、整平劑和還原劑之額外添加劑。
本發明之可固化助熔劑組成物可呈含有所有組成份之單包裝系統方式提供。或者，該可固化助熔劑組成物可呈雙包裝系統方式提供；其中，樹脂組分於第一部份提供而胺助熔劑和視需要地固化劑則由第二部份提供；而其中，第一部份與第二部分係於使用前組合。
本發明之可固化助熔劑組成物可用於，舉例來說，電子組件，電子模組和印刷電路板之生產。該可固化助熔劑組成物可由任何常見之技術(包含，舉例而言，液體噴霧技 術、液體發泡技術、拾浸技術與波浪技術或其他可用於將液體或半固體分注至矽晶粒或基板之其他常見技術)施加至待焊表面。
本發明之可固化助熔劑組成物，視需要地復包括焊料粉末；其中，可固化助熔劑組成物係為焊料糊。較佳地，該焊料粉末係選自Sn/Pb、Sn/Ag、Sn/Ag/Cu、Sn/Cu、Sn/Zn、Sn/Zn/Bi、Sn/Zn/Bi/In、Sn/Bi和Sn/In之合金(較佳地其中焊料粉末係選自63wt%Sn/37wt%Pb；96.5wt%Sn/3.5wt%Ag；96wt%Sn/3.5wt%Ag/0.5wt%Cu；96.4wt%Sn/2.9wt%Ag/0.5wt%Cu；96.5wt%Sn/3wt%Ag/0.5wt%Cu；42wt%Sn/58wt%Bi；99.3wt%Sn/0.7wt%Cu；91wt%Sn/9wt%Zn和89wt%Sn/8wt%Zn/3wt%Bi之合金)。
該焊料糊較佳包括：1至50wt%(更佳地，5至30wt%，最佳地，5至15wt%)之樹脂組分與助熔錯合物之組合及50至99wt%焊料粉末，該助熔錯合物係藉由將胺助熔劑與羧酸組合所形成。該焊料糊可藉由常見技術混煉(compounded)，舉例來說。以進行此操作之常見儀器捏合與混合焊料粉末及胺助熔劑與樹脂組分。
該焊料糊可被用於，舉例來說，電子組件、電子模組與印刷電路板之製造。該焊料糊可藉由任何常見之技術(包含，舉例來說，利用焊料印刷機或絲網印刷機透過常見之焊罩印刷焊料糊)施加至一個或多個待焊表面。
用於本發明可固化助熔劑組成物之式I所示之胺助熔 劑係可由所屬技藝領域中具通常知識者了解之常見合成技術製備。
本發明之可固化助熔劑組成物所使用之助熔錯合物能藉由例如以下步驟製備：(a)組合根據式I之胺助熔劑與羧酸(如，實施例5)；或(b)在根據式I之胺助熔劑製備期間之某些時點添加羧酸。較佳地，本發明之可固化助熔劑組成物所使用之該助熔錯合物係藉由組合根據式I之胺助熔劑與羧酸而製備。視需要地，根據式I之助熔劑與羧酸能在溶劑中組合(如，1,3-二氧雜環戊烷)以促進助熔錯合物之形成。然後能蒸發掉該溶劑而留下助熔錯合物。
本發明中之形成複數個封裝之電氣接點的方法可視需要地為覆晶焊接過程之一部分，其中半導體晶片係安裝於印刷電路版之上，其中該半導體晶片包括複數個第一電氣接點以及其中該印刷電路板包括複數個相應的第二電氣接點。在上述覆晶方法中，本發明之可固化助熔劑組成物施加至複數個第一電氣接點和複數個相應的第二電氣接點中之一者或兩者，以利於將該複數個第一電氣接點焊料連結至複數個相應的第二電氣接點而形成電氣互連。較佳地，該覆晶焊接過程復包括固化步驟，其中樹脂組分被固化，封裝在該複數個第一電氣接點和複數個第二電氣接點間之電氣互連。
於進行形成本發明之複數個封裝之電氣接點的方法期間，本發明之可固化助熔劑組成物係較佳施加至印刷電路板(有進行或未進行平滑處理)而覆蓋複數個第一電氣接 點。該焊料係較佳以焊球形式施加至於半導體晶片上之該複數個相應的第二電氣接點。接著，將該有焊料附著之半導體晶片置於經可固化助熔劑組成物處理之印刷電路板上。之後使半導體晶片對準印刷電路板且將焊料加熱至其回焊溫度。於回焊過程中，該可固化助熔劑組成物作為助熔劑並促進焊料黏著至印刷電路板之該複數個第一電氣接點之黏著性，而於複數個第一電氣接點與複數個相應的第二電氣接點間形成複數個電氣互連。之後將該樹脂組分固化，以封裝該複數個電氣互連。
於回焊過程中，該焊料熔融且流動，以形成複數個電氣互連。該可固化助熔劑組成物較佳直至焊料已流動且形成複數個電氣互連前不應膠化，否則印刷電路板與半導體晶片可能無法正確對準。較佳於可固化助熔劑組成物中之樹脂組分於焊料回焊後完全固化，以形成封裝之電氣接合。
在下列實施例中將詳細描述本發明之某些具體例
實施例1：胺助熔劑之合成
使用下列製程製備2,6-二胺基-2,5,6-三甲基庚-3-醇為胺助熔劑。首先，使用下列合成方法製備2,5,6-三甲基-2,6-二硝基庚-3-醇中間產物。
具體而言，使三頸圓底燒瓶配備有攪拌棒、熱電偶 (thermocouple)、附蓋氮氣入口之滴液漏斗和冷凝器。之後，將2-硝基丙烷(50克(g)、0.56莫耳、5.0當量)和催化量之1,8-二氮雜雙環[5.4.0]十一碳-7-烯裝入此燒瓶。之後，於氮氣下攪拌此瓶之內容物三十分鐘。之後，將巴豆醛(crotonaldehyde)(7.9g、9.2毫升(mL)、0.112莫耳、1.0當量)以二十分鐘之時間滴加至瓶中。之後，於氮氣下攪拌此瓶之內容物5至6小時，期間可觀察到白色固體自該溶液中沈澱出。於此時，GC分析顯示於該反應物混合物中無任何巴豆醛存在。於氮氣下攪拌此瓶之內容物整晚。之後，自該溶液真空過濾出該沈澱物並經由水徹底清洗而產生白色固體。將該中間產物固體風乾，隨後於45℃真空乾燥。所欲中間產物二硝基醇的總產率為72%(27.8g)。核磁共振測試(Nuclear magnetic resonance，NMR)和液相層析法(liquid chromatography，LC)顯示該中間產物純度>99%。
第二步，使用下列合成方法自該中間產物二硝基醇製備產物2,6-二胺基-2,5,6-三甲基庚-3-醇為胺助熔劑。
具體來說，將25g的中間產物二硝基醇溶於200mL甲醇中，以14.2g之RaNi 3111作為催化劑。之後，於60℃，氫氣壓力4,137kPa(600psi)之高壓釜中氫化該混合物。在完成包含過濾該催化劑與移除甲醇的工作後，得到11g(59%產率)的低黏度液體產物。NMR與氣相層析質譜法(gas chromatograph-mass spectroscopy，GC-MS)分析確認所欲產物2,6-二胺基-2,5,6-三甲基庚-3-醇(胺助熔劑)之存在。化學離子化質譜法(Chemical ionization mass spectroscopy，CI-MS)顯示[M+H]=189以及GC分析顯示該產物純度為94%。於0.68kPa(5.1托)下測得該材料之沸點溫度為125℃至135℃。13C NMR(CDCl3)：δ 16.8,25.2,27.9,30.8,34.7,42.2,51.8,52.8和77.3 ppm。
實施例2：胺助熔劑之合成
使用下列製程製備2,6-二胺基-2,6-二甲基-5-苯基庚-3-醇為胺助熔劑。首先，使用下列合成方法製備2,6-二甲基-2,6-二硝基-5-苯基庚-3-醇中間產物。
具體而言，使三頸圓底燒瓶配備有攪拌棒、熱電偶、附蓋氮氣入口之滴液漏斗和冷凝器。之後，將2-硝基丙烷(101.1g、1.14莫耳、6.0當量)和催化量的1,8-二氮雜雙環[5.4.0]十一碳-7-烯(DBU)裝入此燒瓶。之後，於氮氣下攪拌此瓶內容物二十分鐘。之後，將反式肉桂醛(25.0g、0.19莫耳、1.0當量)以二十分鐘之時間滴加至瓶中。於添加反式肉桂醛的過程中，可觀察到約22℃之放熱。加完反式肉桂醛後，將該燒瓶內容物加熱至50℃且維持此溫度四小時。之後，將該反應物冷卻至室溫。當燒瓶內容物達到 36.8℃時，自溶液中形成淡黃色固體。之後，經由布氏漏斗(Buchner funnel)過濾該燒瓶內容物且以戊烷與醚徹底清洗回收之中間產物二胺基醇粉末。之後，將該中間產物二胺基醇粉末置於真空下乾燥1小時。該所欲之中間產物二胺基醇總產率為62%(36g)。NMR分析顯示該中間產物二胺基醇純度>99%。1H NMR(CDCl3)：δ 1.45-2.27(m,15H),3.52-3.54(m,1H),3.67-3.74(m,1H),7.17-7.34(m,5H)。13C NMR(CDCl3)：δ 20.8,22.4,23.2,25.8,31.3,50.3,72.9,91.5,91.6,128.1,128.7,129.4,136.6 ppm。
第二步，使用下列合成方法自該中間產物二硝基醇製備產物2,6-二胺基-2,6-二甲基-5-苯基庚-3-醇為胺助熔劑。
具體而言，將50g中間產物二硝基醇溶於300mL甲醇中，以24.3g之RaNi3111作為催化劑。之後，於60℃，氫氣壓力4137kPa(600psi)之高壓釜中氫化此混合物。在完成包含過濾催化劑與移除甲醇的工作後，得到40g(68%產率)的高黏度液體產物。NMR與氣相層析質譜法(GC-MS)分析確認該所欲產物2,6-二胺基-2,6-二甲基-5-苯基庚-3-醇(胺助熔劑)之存在。化學離子化質譜法(CI-MS)顯示[M+H]=251以及GC分析顯示直接得自高壓釜之產物純度係為78%。所存在之剩餘材料似乎是來自亨利反應(Henry reaction)之 逆反應的單加成物。之後，該產物藉由真空蒸餾純化至96.2%純度。於0.67kPa(5.0托)下確認該純化產物的沸點溫度為150℃至160℃。1H NMR(CDCl3)：δ 0.91-0.99(m,12H),1.67-1.81(m,3H),2.71-2.76(m,2H),7.08-7.23(m,5H)。13C NMR(CDCl3)：δ 24.6,27.9,28.3,29.8,31.6,51.8,52.6,54.2,75.9,126.3,127.8,129.4,142.0 ppm.。
實施例3：胺助熔劑之合成
使用下列製程製備一種具有下式之胺助熔劑：
具體而言，在具有攪拌棒之反應瓶中加入(0.05莫耳)實施例1之產物。之後，將該反應瓶置於具有磁性攪拌能力之加熱板上。之後，以氮氣惰性化該反應瓶，接著於環境溫度添加(0.1莫耳)2-乙基己基環氧丙基醚(由Momentive Performance Materials提供)至該反應瓶，並伴隨攪拌。之後，將該加熱板之設定溫度升溫至75℃且繼續攪拌該反應瓶內容物兩(2)小時。之後，將該加熱板之設定溫度升溫至140℃且繼續再攪拌該反應瓶內容物兩(2)小時。之後，將該加熱板之設定溫度降至80℃且將該反應瓶加以真空，並將瓶內減壓至30 mmHg。於這些條件下持續攪拌該反應瓶內容物另外兩(2)小時以提供該助熔劑產物。使用熱重分析(TGA)自25℃起以升溫速率10℃/分鐘測量該助熔劑產物於加熱至250℃之質量損失百分比。該助熔劑產物測得之 質量損失(WL)為9wt%。
實施例4：胺助熔劑之合成
使用下列製程製備一種具有下式之胺助熔劑：
具體而言，在具有攪拌棒之反應瓶中加入(0.05莫耳)實施例2之產物。之後，將該反應瓶置於具有磁性攪拌能力之加熱板上。之後，以氮氣惰性化該反應瓶，接著於環境溫度添加(0.1莫耳)2-乙基己基環氧丙基醚(由Momentive Performance Materials提供)至該反應瓶，並伴隨攪拌。之後，將該加熱板之設定溫度升溫至75℃且繼續攪拌該反應瓶內容物兩(2)小時。之後，將該加熱板之設定溫度升溫至140℃且繼續攪拌該反應瓶內容物再兩(2)小時。之後，將該加熱板之設定溫度降至80℃且將該反應瓶加以真空，並將瓶內減壓至30 mmHg。於這些條件下持續攪拌該反應瓶內容物另兩(2)小時以提供該助熔劑產物。使用熱重分析(TGA)自25℃起以升溫速率10℃/分鐘測量該助熔劑產物於加熱至250℃之質量損失百分比。該助熔劑產物測得之質量損失百分比(WL)為5wt%。
實施例5：助熔錯合物之製備
在環境條件下，手動混合依據實施例3闡述之製程製備之胺助熔劑(4 g)與1,4-二羥基-2-萘甲酸(0.37 g)於1,3-二氧雜環戊烷(1.5 g)中，以形成具有其胺助熔劑之胺氮與羧 酸之酸含量(-COOH)的當量比約為2：1之助熔錯合物。藉由加熱至80℃，30分鐘自助熔錯合物移除該1,3-二氧雜環戊烷。
助熔錯合物之質量損失百分率，係藉由使用熱重分析(TGA)，自25℃起以升溫速率10℃/分鐘加熱至230℃測定。該助熔錯合物所測得之質量損失(WL)為20.2wt%。
實施例6：助熔錯合物之製備
在環境條件下，使用刮勺手動混合依據實施例4闡述之製程製備之胺助熔劑(4 g)與1,4-二羥基-2-萘甲酸(0.37 g)，以形成具有其胺助熔劑之胺氮與羧酸之酸含量(-COOH)的當量比為1.8：1之助熔錯合物。
助熔錯合物之質量損失百分率，係藉由使用熱重分析(TGA)，自25℃起以升溫速率10℃/分鐘加熱至250℃測定。該助熔錯合物所測得之質量損失(WL)為13.6wt%。
實施例7：可固化助熔劑之製備
依據實施例6所製備之熔錯合物與環氧氯丙烷及雙酚A之液態環氧樹脂反應產物(由陶氏化學公司之D.E.R.TM331TM提供)以1：1之重量比例組合以形成可固化助熔劑組成物。
實施例8：可助熔性之評估
依據實施例7所製備之可固化助溶劑組成物之可助熔性係使用以下過程進行評估。銅試片係用以作為待焊電氣接點。將依據實施例7所製備之助熔劑組成物之一滴小液滴分注於該待焊銅試片之表面上。四個直徑0.381mm之無 鉛焊料球(95.5wt% Sn/4.0wt% Ag/0.5wt% Cu)係置於銅試片上助熔錯合物之液滴中。所用之無鉛焊料之熔化範圍係為217至221℃。之後銅試片置於已預加熱至145℃之加熱板上且維持2分鐘。之後銅試片置於另一已預加熱至260℃之加熱板上且維持直至焊料達到回焊條件。之後將銅試片自熱源移開且以下列狀況評估(a)原始放置之四個焊料球之熔合程度與聚結程度，(b)所得聚結焊料之尺寸，以評判流動與擴散以及(c)焊料與銅試片表面之間的連結。可固化助溶劑組成物之可助熔性於0至4之量尺上測定為4，其中：0=焊料液滴間無熔合且與銅試片間無焊料連結；1,2=焊料液滴間部份至完全熔合，但與銅試片間無焊料連結；3=焊料液滴間完全熔合，但焊料擴散與流動極微；4=焊料液滴間完全熔合，於銅試片表面有良好焊料擴散及流動並且與銅試片間有焊料連結；

Claims (10)

  1. 一種可固化助熔劑組成物，包括下列初始組分：每分子具有至少兩個環氧乙烷基之樹脂組分；羧酸；式I所示之胺助熔劑： 其中，R1、R2、R3和R4係獨立選自氫、經取代之C1-80烷基、未經取代之C1-80烷基、經取代之C7-80芳基烷基和未經取代之C7-80芳基烷基；其中R7和R8係獨立選自C1-20烷基、經取代之C1-20烷基、C6-20芳基和經取代之C6-20芳基；或其中R7和R8連同其所附接之碳一起形成視需要經C1-6烷基取代之C3-20環烷基環；其中R10和R11係獨立選自C1-20烷基、經取代之C1-20烷基、C6-20芳基和經取代之C6-20芳基；或其中R10和R11連同其所附接之碳一起形成視需要經C1-6烷基取代之C3-20環烷基環；以及，其中R9係選自氫、C1-30烷基、經取代之C1-30烷基、C6-30芳基和經取代之C6-30芳基；以及視需要之固化劑。
  2. 如申請專利範圍第1項所述之可固化助熔劑組成物，其中，該羧酸係選自C8-20脂肪族單羧酸；C2-20脂肪族 二羧酸；C6-20芳族羧酸；以及其混合物所組成之群組。
  3. 如申請專利範圍第2項所述之可固化助熔劑組成物，其中，該羧酸係選自辛酸、壬酸、十一烷酸、十二烷酸、十三烷酸、十四烷酸、十五烷酸、十六烷酸、十七烷酸、硬脂酸、羥基硬脂酸、油酸、亞麻油酸、α-次亞麻油酸、二十烷酸、草酸、丙二酸、琥珀酸、蘋果酸、戊二酸、己二酸、庚二酸、辛二酸、苯甲酸、鄰苯二甲酸、間苯二甲酸、對苯二甲酸、半蜜臘酸、偏苯三甲酸、均苯三甲酸、1,2,3,5-苯四甲酸、1,2,3,4-苯四甲酸、1,2,4,5-苯四甲酸、蜜臘酸；甲基苯甲酸；茬甲酸、2,3-二甲基苯甲酸、均三甲基苯甲酸、1,2,3,4-苯四甲酸、肉桂酸、水楊酸、苯甲酸、萘甲酸、酸式酚酞、雙酚酸、以及其混合物所組成之群組。
  4. 如申請專利範圍第1項所述之可固化助熔劑組成物，其中，該助熔劑組成物具有該胺助熔劑之氮與該羧酸之酸含量(-COOH)的當量比為1：1至20：1。
  5. 如申請專利範圍第1項所述之可固化助熔劑組成物，其中，R1、R2、R3和R4之選擇中之該經取代之C1-80烷基與該經取代之C7-80芳基烷基上的取代基係選自-OH基、-OR5基、-COR5-基、-COR5基、-C(O)R5基、-CHO基、-COOR5基、-OC(O)OR5基、-S(O)(O)R5基、-S(O)R5基、-S(O)(O)NR5 2基、-OC(O)NR6 2基、-C(O)NR6 2基、-CN基、-N(R6)-基和-NO2基中至少一者；其中，R5係選自C1-28烷基、C3-28環烷基、C6-15芳基、C7-28芳基烷基和C7-28 烷基芳基；其中，R6係選自氫、C1-28烷基、C3-28環烷基、C6-15芳基、C7-28芳基烷基和C7-28烷基芳基。
  6. 如申請專利範圍第1項所述之可固化助熔劑組成物，其中，R1、R2、R3和R4中的1至3者為氫。
  7. 如申請專利範圍第1項所述之可固化助熔劑組成物，其中，R1、R2、R3和R4係獨立選自氫、-CH2CH(OH)R18和-CH2CH(OH)CH2-O-R18基；其中，R18係選自氫、C1-28烷基、C3-28環烷基、C6-28芳基、C7-28芳基烷基和C7-28烷基芳基；其中，R7和R8係皆為甲基；其中R10和R11係皆為甲基；且其中R9係選自甲基和苯基；且其中，R1、R2、R3和R4中的0至3者係為氫。
  8. 如申請專利範圍第4項所述之可固化助熔劑組成物，其中，R1和R2中的一者為氫；且其中，R3和R4中的一者為氫。
  9. 如申請專利範圍第1項所述之可固化助熔劑組成物，復包括：焊料粉末。
  10. 一種形成封裝之冶金接合的方法，包括：提供申請專利範圍第1項所述之可固化助熔劑組成物；提供複數個第一電氣接點；提供複數個相應的第二電氣接點；提供焊料；將該可固化助熔劑組成物施加至該複數個第一電氣接點和該複數個相應的第二電氣接點中的至少一 者；將該複數個第一電氣接點臨近該複數個相應的第二電氣接點放置；加熱該焊料超過其回焊溫度，以形成熔融焊料並使該複數個第一電氣接點和該複數個相應的第二電氣接點暴露於該熔融焊料；以該熔融焊料自該複數個第一電氣接點和該複數個相應的第二電氣接點置換該可固化助熔劑組成物，並於該複數個第一電氣接點和該複數個相應的第二電氣接點間形成複數個電氣互連；以及固化該樹脂組分，封裝該複數個電氣互連。
TW101135052A 2011-09-30 2012-09-25 可固化胺、羧酸助熔劑組成物及焊接方法 TWI438177B (zh)

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