JP6058959B2 - 硬化性アミン、カルボン酸フラックス組成物およびはんだ付け方法 - Google Patents
硬化性アミン、カルボン酸フラックス組成物およびはんだ付け方法 Download PDFInfo
- Publication number
- JP6058959B2 JP6058959B2 JP2012210449A JP2012210449A JP6058959B2 JP 6058959 B2 JP6058959 B2 JP 6058959B2 JP 2012210449 A JP2012210449 A JP 2012210449A JP 2012210449 A JP2012210449 A JP 2012210449A JP 6058959 B2 JP6058959 B2 JP 6058959B2
- Authority
- JP
- Japan
- Prior art keywords
- group
- acid
- substituted
- flux composition
- groups
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- YDACWEMYHGNDID-UHFFFAOYSA-N CCCCC(CC)COCC(CNC(C)(C)C(CC(C(C)(C)NC(COCC(CC)CCCC)O)O)c1ccccc1)O Chemical compound CCCCC(CC)COCC(CNC(C)(C)C(CC(C(C)(C)NC(COCC(CC)CCCC)O)O)c1ccccc1)O YDACWEMYHGNDID-UHFFFAOYSA-N 0.000 description 1
- FBFUPNLWHMPZCN-PKSQDBQZSA-N C[C@@H](C(CC(C(C)(C)[N+]([O-])=O)c1ccccc1)O)[N+]([O-])=O Chemical compound C[C@@H](C(CC(C(C)(C)[N+]([O-])=O)c1ccccc1)O)[N+]([O-])=O FBFUPNLWHMPZCN-PKSQDBQZSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
- B23K35/3612—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest with organic compounds as principal constituents
- B23K35/3618—Carboxylic acids or salts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
- B23K1/203—Fluxing, i.e. applying flux onto surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
- B23K35/362—Selection of compositions of fluxes
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C211/00—Compounds containing amino groups bound to a carbon skeleton
- C07C211/01—Compounds containing amino groups bound to a carbon skeleton having amino groups bound to acyclic carbon atoms
- C07C211/02—Compounds containing amino groups bound to a carbon skeleton having amino groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
- C07C211/09—Diamines
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C215/00—Compounds containing amino and hydroxy groups bound to the same carbon skeleton
- C07C215/02—Compounds containing amino and hydroxy groups bound to the same carbon skeleton having hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/09—Carboxylic acids; Metal salts thereof; Anhydrides thereof
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/16—Nitrogen-containing compounds
- C08K5/17—Amines; Quaternary ammonium compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
- H01L24/92—Specific sequence of method steps
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3489—Composition of fluxes; Methods of application thereof; Other methods of activating the contact surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/42—Printed circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
- H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
- H01L2224/11334—Manufacturing methods by local deposition of the material of the bump connector in solid form using preformed bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/13111—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/273—Manufacturing methods by local deposition of the material of the layer connector
- H01L2224/2731—Manufacturing methods by local deposition of the material of the layer connector in liquid form
- H01L2224/2732—Screen printing, i.e. using a stencil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
- H01L2224/2741—Manufacturing methods by blanket deposition of the material of the layer connector in liquid form
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
- H01L2224/2741—Manufacturing methods by blanket deposition of the material of the layer connector in liquid form
- H01L2224/27418—Spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
- H01L2224/2741—Manufacturing methods by blanket deposition of the material of the layer connector in liquid form
- H01L2224/27422—Manufacturing methods by blanket deposition of the material of the layer connector in liquid form by dipping, e.g. in a solder bath
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/29294—Material of the matrix with a principal constituent of the material being a liquid not provided for in groups H01L2224/292 - H01L2224/29291
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29311—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2224/29387—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/2939—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81009—Pre-treatment of the bump connector or the bonding area
- H01L2224/8101—Cleaning the bump connector, e.g. oxide removal step, desmearing
- H01L2224/81011—Chemical cleaning, e.g. etching, flux
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81009—Pre-treatment of the bump connector or the bonding area
- H01L2224/81024—Applying flux to the bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8112—Aligning
- H01L2224/81143—Passive alignment, i.e. self alignment, e.g. using surface energy, chemical reactions, thermal equilibrium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81192—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
- H01L2224/81815—Reflow soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
- H01L2224/83862—Heat curing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/921—Connecting a surface with connectors of different types
- H01L2224/9211—Parallel connecting processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10621—Components characterised by their electrical contacts
- H05K2201/10674—Flip chip
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10954—Other details of electrical connections
- H05K2201/10977—Encapsulated connections
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
- H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
Description
2,6−ジアミノ−2,5,6−トリメチルヘプタン−3−オール アミンフラックス剤が以下の手順を使用して製造された。最初に、2,5,6−トリメチル−2,6−ジニトロヘプタン−3−オール中間体が以下の合成方法を使用して製造された。
2,6−ジアミノ−2,6−ジメチル−5−フェニルヘプタン−3−オール アミンフラックス剤が以下の手順を使用して製造された。最初に、2,6−ジメチル−2,6−ジニトロ−5−フェニルヘプタン−3−オール中間体が以下の合成方法を使用して製造された。
下記式
下記式
実施例3に示された手順に従って製造されたアミンフラックス剤(4g)が、周囲条件下で、1,3−ジオキソラン(1.5g)中の1,4−ジヒドロキシ−2−ナフトエ酸(0.37g)と手作業で混合されて、約2:1のアミンフラックス剤アミン窒素:カルボン酸酸含量(−COOH)当量比を有するフラックス複合体を形成した。80℃で30分間加熱することによって、フラックス複合体から1,3−ジオキソランが除去された。
実施例4に示された手順に従って製造されたアミンフラックス剤(4g)が、周囲条件下で、スパチュラを用いて1,4−ジヒドロキシ−2−ナフトエ酸(0.37g)と手作業で混合されて、1.8:1のアミンフラックス剤アミン窒素:カルボン酸酸含量(−COOH)当量比を有するフラックス複合体を形成した。
実施例6に従って製造されたフラックス複合体が、エピクロロヒドリンとビスフェノールAとの液体エポキシ樹脂反応生成物(ザダウケミカルカンパニーからD.E.R.商標331商標として入手可能)と1:1重量比で一緒にされて硬化性フラックス組成物を形成した。
実施例7に従って製造された硬化性フラックス組成物のフラックス能力が、以下の手順を用いて評価された。はんだ付けされる電気接点として銅クーポンが使用された。この銅クーポンのはんだ付けされる表面上に、実施例7に従って製造された硬化性フラックス組成物の小滴が分配された。鉛を含まないはんだ(95.5重量%Sn/4.0重量%Ag/0.5重量%Cu)の直径0.381mmのボール4つが、銅クーポン上のフラックス複合体の小滴中に配置された。使用されたこの鉛を含まないはんだの溶融範囲は217〜221℃であった。次いで、この銅クーポンは、145℃に予備加熱されたホットプレート上に置かれ、そこで2分間保持された。次いで、この銅クーポンは260℃に予備加熱された別のホットプレート上に配置され、そこではんだがリフロー条件に到達するまで保持された。次いで、この銅クーポンは熱源から取り外され、(a)元々配置された4つのはんだボールの融合および合体の程度、(b)フローおよび広がりを評価するための得られた合体したはんだのサイズ、並びに(c)銅クーポンの表面へのはんだの結合によって評価された。この硬化性フラックス組成物のフラックス能力は以下の0〜4の等級で、4であったと決定された:
1、2=はんだ滴どうしの部分的〜完全な融合、しかしはんだは銅クーポンと結合せず;
3=はんだ滴どうしの完全な融合、しかし最小限のはんだの広がりおよびフロー;
4=はんだ滴どうしの完全な融合、銅クーポンの表面上での良好なはんだの広がりおよびフロー、並びに銅クーポンへのはんだの結合。
Claims (10)
- 分子あたり少なくとも2つのオキシラン基を有する樹脂成分;
カルボン酸;
式I:
場合によっては硬化剤;
を当初成分として含む硬化性フラックス組成物。 - 前記カルボン酸がC8−20脂肪族モノカルボン酸、C2−20脂肪族ジカルボン酸、C6−20芳香族カルボン酸、並びにこれらの混合物からなる群から選択される、請求項1に記載の硬化性フラックス組成物。
- 前記カルボン酸が、オクタン酸、ノナン酸、ウンデカン酸、ドデカン酸、トリデカン酸、テトラデカン酸、ペンタデカン酸、ヘキサデカン酸、ヘプタデカン酸、ステアリン酸、ヒドロキシステアリン酸、オレイン酸、リノール酸、α−リノレン酸、イコサン酸、シュウ酸、マロン酸、コハク酸、リンゴ酸、グルタル酸、アジピン酸、ピメリン酸、スベリン酸、安息香酸、フタル酸、イソフタル酸、テレフタル酸、ヘミメリット酸、トリメリット酸、トリメシン酸、メロファン酸、プレーニト酸、ピロメリット酸、メリット酸、トルイル酸、キシリル酸、ヘメリト酸、メシチレン酸、プレーニト酸、ケイ皮酸、サリチル酸、安息香酸、ナフトエ酸、フェノールフタリン、ジフェノール酸およびこれらの混合物からなる群から選択される請求項2に記載の硬化性フラックス組成物。
- 当該フラックス組成物が、1:1〜20:1のフラックス剤アミン窒素:カルボン酸酸含量(−COOH)当量比を示す、請求項1に記載の硬化性フラックス組成物。
- R1、R2、R3およびR4の置換C1−80アルキル基および置換C7−80アリールアルキル基における置換が、−OH基、−OR5基、−COR 5’ −基、−COR5基、−C(O)R5基、−CHO基、−C(O)OR5基、−OC(O)OR5基、−S(O)(O)R5基、−S(O)R5基、−S(O)(O)NR5 2基、−OC(O)NR6 2基、−C(O)NR6 2基、−CN基、−N(R6)−基、および−NO2基の少なくとも1種から選択され;R5がC1−28アルキル基、C3−28シクロアルキル基、C6−15アリール基、C7−28アリールアルキル基、およびC7−28アルキルアリール基から選択され;R 5’ がC 1−28 アルキレン基、C 3−28 シクロアルキレン基、C 6−15 アリーレン基、C 7−28 アリールアルキレン基、およびC 7−28 アルキルアリーレン基から選択され;R6が、水素、C1−28アルキル基、C3−28シクロアルキル基、C6−15アリール基、C7−28アリールアルキル基、およびC7−28アルキルアリール基から選択される;
請求項1に記載の硬化性フラックス組成物。 - R1、R2、R3およびR4の1〜3つが水素である請求項1に記載の硬化性フラックス組成物。
- R1、R2、R3およびR4が独立して水素、−CH2CH(OH)R18、および−CH2CH(OH)CH2−O−R18基から選択され;R18が水素、C1−28アルキル基、C3−28シクロアルキル基、C6−28アリール基、C7−28アリールアルキル基、およびC7−28アルキルアリール基から選択され;R7およびR8は両方ともメチル基であり;R10およびR11は両方ともメチル基であり;並びにR9はメチル基およびフェニル基から選択され;並びにR1、R2、R3およびR4の0〜3つが水素である請求項1に記載の硬化性フラックス組成物。
- R1およびR2の一方が水素であり、かつR3およびR4の一方が水素である請求項4に記載の硬化性フラックス組成物。
- はんだ粉体をさらに含む請求項1に記載の硬化性フラックス組成物。
- 請求項1に記載の硬化性フラックス組成物を提供し;
複数の第1の電気接点を提供し;
対応する複数の第2の電気接点を提供し;
はんだを提供し;
前記複数の第1の電気接点および前記対応する複数の第2の電気接点の少なくとも一方に前記硬化性フラックス組成物を適用し;
前記複数の第1の電気接点を前記対応する複数の第2の電気接点の近くに配置し;
前記はんだをそのリフロー温度より高く加熱し、溶融したはんだを形成し、そして前記複数の第1の電気接点および前記対応する複数の第2の電気接点を前記溶融したはんだに曝し;
前記複数の第1の電気接点および前記対応する複数の第2の電気接点における前記硬化性フラックス組成物を前記溶融したはんだで置き換えて、そして前記複数の第1の電気接点と前記対応する複数の第2の電気接点との間の複数の電気的相互接続を形成し;並びに
前記樹脂成分を硬化させ、前記複数の電気的相互接続を封止する;
ことを含む、封止された金属接続を形成する方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/250,125 | 2011-09-30 | ||
US13/250,125 US8430293B2 (en) | 2011-09-30 | 2011-09-30 | Curable amine, carboxylic acid flux composition and method of soldering |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013079376A JP2013079376A (ja) | 2013-05-02 |
JP6058959B2 true JP6058959B2 (ja) | 2017-01-11 |
Family
ID=47827357
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012210449A Expired - Fee Related JP6058959B2 (ja) | 2011-09-30 | 2012-09-25 | 硬化性アミン、カルボン酸フラックス組成物およびはんだ付け方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8430293B2 (ja) |
JP (1) | JP6058959B2 (ja) |
KR (1) | KR101992637B1 (ja) |
CN (1) | CN103071950B (ja) |
DE (1) | DE102012019259A1 (ja) |
FR (1) | FR2980726B1 (ja) |
TW (1) | TWI438177B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013115083A (ja) * | 2011-11-25 | 2013-06-10 | Fujitsu Semiconductor Ltd | 半導体装置及びその製造方法 |
WO2018231612A2 (en) * | 2017-06-12 | 2018-12-20 | Ormet Circuits, Inc. | Metallic adhesive compositions having good work lives and thermal conductivity, methods of making same and uses thereof |
KR102006982B1 (ko) * | 2017-08-03 | 2019-08-05 | 주식회사 지엔테크 | 젯팅타입용 솔더 플럭스 조성물 |
JP6764123B1 (ja) * | 2019-10-04 | 2020-09-30 | 千住金属工業株式会社 | ソルダペースト |
Family Cites Families (71)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE860795C (de) * | 1939-03-23 | 1952-12-22 | Hoechst Ag | Verfahren zur Herstellung von aliphatischen Dinitroalkoholen |
US2632022A (en) | 1950-07-07 | 1953-03-17 | Rohm & Haas | Method of preparing 1, 8-diamino-p-menthane |
US2897179A (en) | 1956-07-18 | 1959-07-28 | Union Carbide Corp | Hardener for epoxy resin composition |
US3488831A (en) | 1967-04-14 | 1970-01-13 | Continental Can Co | Fluxing materials for soldering metal surfaces |
BE786932A (fr) | 1971-07-28 | 1973-01-29 | Int Nickel Ltd | Fondants de soudage |
US3814638A (en) | 1972-05-05 | 1974-06-04 | Int Nickel Co | Soldering fluxes |
US3944123A (en) * | 1974-09-10 | 1976-03-16 | Jacobs Norman L | Soldering flux |
US4028143A (en) | 1974-12-30 | 1977-06-07 | Chevron Research Company | Wax-flux composition containing a succinimide salt of an alkylaryl sulfonic acid for soldering |
US4165244A (en) | 1977-10-21 | 1979-08-21 | Jacobs Norman L | Soldering flux and method of using same |
DE2828197A1 (de) * | 1978-06-27 | 1980-01-03 | Winchester Electronics Gmbh | Halogenfreies flussmittel fuer die weichloetung auf kolophoniumbasis |
US4196024A (en) | 1978-11-02 | 1980-04-01 | E. I. Du Pont De Nemours And Company | Alkyl phosphate soldering fluxes |
US4360144A (en) | 1981-01-21 | 1982-11-23 | Basf Wyandotte Corporation | Printed circuit board soldering |
USRE32309E (en) | 1983-10-31 | 1986-12-16 | Scm Corporation | Fusible powdered metal paste |
JPH0647189B2 (ja) * | 1989-01-31 | 1994-06-22 | 日産化学工業株式会社 | クリームはんだ |
US5145722A (en) | 1989-04-11 | 1992-09-08 | Hughes Aircraft Company | Method and composition for protecting and enhancing the solderability of metallic surfaces |
JPH0692035B2 (ja) * | 1989-12-12 | 1994-11-16 | ユーホーケミカル株式会社 | フラックス及びはんだペースト用添加剤 |
US5011546A (en) | 1990-04-12 | 1991-04-30 | International Business Machines Corporation | Water soluble solder flux and paste |
US5004509A (en) * | 1990-05-04 | 1991-04-02 | Delco Electronics Corporation | Low residue soldering flux |
US5128746A (en) | 1990-09-27 | 1992-07-07 | Motorola, Inc. | Adhesive and encapsulant material with fluxing properties |
US5417771A (en) * | 1994-02-16 | 1995-05-23 | Takeda Chemical Industries, Ltd. | Soldering flux |
US5615827A (en) | 1994-05-31 | 1997-04-01 | International Business Machines Corporation | Flux composition and corresponding soldering method |
US5571340A (en) | 1994-09-09 | 1996-11-05 | Fry's Metals, Inc. | Rosin-free, low VOC, no-clean soldering flux and method using the same |
JP3787857B2 (ja) | 1995-03-10 | 2006-06-21 | タムラ化研株式会社 | 回路基板はんだ付け用フラックス及び回路基板 |
JP3498427B2 (ja) | 1995-06-19 | 2004-02-16 | ソニー株式会社 | 成形はんだ用フラックス |
US5851311A (en) | 1996-03-29 | 1998-12-22 | Sophia Systems Co., Ltd. | Polymerizable flux composition for encapsulating the solder in situ |
US5958151A (en) | 1996-07-22 | 1999-09-28 | Ford Global Technologies, Inc. | Fluxing media for non-VOC, no-clean soldering |
JP3692659B2 (ja) * | 1996-10-23 | 2005-09-07 | 日産化学工業株式会社 | フラックス組成物 |
US6367150B1 (en) | 1997-09-05 | 2002-04-09 | Northrop Grumman Corporation | Solder flux compatible with flip-chip underfill material |
JP3797763B2 (ja) * | 1997-09-08 | 2006-07-19 | 富士通テン株式会社 | フラックス組成物 |
US6234381B1 (en) | 1998-04-14 | 2001-05-22 | Denso Corporation | Water-base binder for aluminum material brazing, brazing composition, and method of brazing with the composition |
US6746896B1 (en) * | 1999-08-28 | 2004-06-08 | Georgia Tech Research Corp. | Process and material for low-cost flip-chip solder interconnect structures |
JP4343354B2 (ja) | 1999-11-02 | 2009-10-14 | Agcセイミケミカル株式会社 | 半田用フラックス這い上がり防止剤組成物とその用途 |
US6402013B2 (en) * | 1999-12-03 | 2002-06-11 | Senju Metal Industry Co., Ltd | Thermosetting soldering flux and soldering process |
US6217671B1 (en) | 1999-12-14 | 2001-04-17 | International Business Machines Corporation | Composition for increasing activity of a no-clean flux |
JP2001300766A (ja) | 2000-04-27 | 2001-10-30 | Tamura Kaken Co Ltd | 回路基板はんだ付用フラックス及び回路基板 |
MY138347A (en) | 2000-11-29 | 2009-05-29 | Senju Metal Industry Co | Solder paste |
JP3791403B2 (ja) * | 2000-12-04 | 2006-06-28 | 富士電機ホールディングス株式会社 | 鉛フリーハンダ対応無洗浄用フラックスおよびこれを含有するハンダ組成物 |
US6458472B1 (en) * | 2001-01-08 | 2002-10-01 | Henkel Loctite Corporation | Fluxing underfill compositions |
US6794761B2 (en) | 2001-04-26 | 2004-09-21 | Intel Corporation | No-flow underfill material |
JP3888573B2 (ja) * | 2001-06-29 | 2007-03-07 | 富士電機ホールディングス株式会社 | ハンダ組成物 |
US20030111519A1 (en) | 2001-09-04 | 2003-06-19 | 3M Innovative Properties Company | Fluxing compositions |
TWI228132B (en) | 2001-09-26 | 2005-02-21 | Nof Corp | Soldering flux composition and solder paste |
JP4142312B2 (ja) | 2002-02-28 | 2008-09-03 | ハリマ化成株式会社 | 析出型はんだ組成物及びはんだ析出方法 |
US6887319B2 (en) | 2002-04-16 | 2005-05-03 | Senju Metal Industry Co., Ltd. | Residue-free solder paste |
US7534309B2 (en) | 2002-06-17 | 2009-05-19 | Sumitomo Light Metal Industries, Ltd. | Aqueous aluminum brazing composition, aluminum material coated with the brazing composition, brazing method using the aluminum material, and automotive heat exchanger manufactured by using the brazing method |
US7182241B2 (en) * | 2002-08-09 | 2007-02-27 | Micron Technology, Inc. | Multi-functional solder and articles made therewith, such as microelectronic components |
US7022410B2 (en) | 2003-12-16 | 2006-04-04 | General Electric Company | Combinations of resin compositions and methods of use thereof |
US20050170188A1 (en) | 2003-09-03 | 2005-08-04 | General Electric Company | Resin compositions and methods of use thereof |
US7026376B2 (en) | 2003-06-30 | 2006-04-11 | Intel Corporation | Fluxing agent for underfill materials |
US7276673B2 (en) | 2003-09-26 | 2007-10-02 | Tdk Corporation | Solder bonding method and solder bonding device |
TWI262041B (en) | 2003-11-14 | 2006-09-11 | Hitachi Chemical Co Ltd | Formation method of metal layer on resin layer, printed wiring board, and production method thereof |
US7671114B2 (en) | 2004-01-26 | 2010-03-02 | Henkel Corporation | Adhesive of substituted oxirane or oxetane compound with silver-based, lead-free solder |
WO2006009118A1 (ja) * | 2004-07-21 | 2006-01-26 | Nissan Chemical Industries, Ltd. | ハンダ用耐熱水溶性フラックス組成物 |
US20060068521A1 (en) * | 2004-09-29 | 2006-03-30 | Song-Hua Shi | Method of fabricating microelectronic package using no-flow underfill technology and microelectronic package formed according to the method |
MY148568A (en) | 2004-12-09 | 2013-04-30 | Lonza Ag | Quaternary ammonium salts as a conversion coating or coating enhancement |
US20060147683A1 (en) | 2004-12-30 | 2006-07-06 | Harima Chemicals, Inc. | Flux for soldering and circuit board |
US20060272747A1 (en) | 2005-06-03 | 2006-12-07 | Renyi Wang | Fluxing compositions |
US20060275608A1 (en) | 2005-06-07 | 2006-12-07 | General Electric Company | B-stageable film, electronic device, and associated process |
JP2007169602A (ja) * | 2005-11-01 | 2007-07-05 | Shin Etsu Chem Co Ltd | 液状エポキシ樹脂組成物 |
JP3957729B1 (ja) * | 2006-03-11 | 2007-08-15 | 株式会社エヌティ・サクセス | ハンダ付け方法及び電子部品 |
US7780801B2 (en) | 2006-07-26 | 2010-08-24 | International Business Machines Corporation | Flux composition and process for use thereof |
US20080156852A1 (en) | 2006-12-29 | 2008-07-03 | Prakash Anna M | Solder flux composition and process of using same |
US7569164B2 (en) | 2007-01-29 | 2009-08-04 | Harima Chemicals, Inc. | Solder precoating method |
WO2009013210A1 (en) | 2007-07-23 | 2009-01-29 | Henkel Limited | Solder flux |
JP5387874B2 (ja) * | 2007-10-17 | 2014-01-15 | 日立化成株式会社 | 液状封止樹脂組成物を用いた半導体装置の製造方法 |
JP5033047B2 (ja) * | 2008-04-24 | 2012-09-26 | パナソニック株式会社 | 熱硬化性樹脂組成物及びその製造方法 |
CN101758337B (zh) * | 2009-12-03 | 2012-02-15 | 湖南阿斯达生化科技有限公司 | 一种助焊剂用非卤素活性剂 |
CA2723348C (en) * | 2009-12-22 | 2014-07-08 | Dow Global Technologies, Inc. | Novel diamino-alcohol compounds and processes for their manufacture |
US8070045B1 (en) * | 2010-12-02 | 2011-12-06 | Rohm And Haas Electronic Materials Llc | Curable amine flux composition and method of soldering |
US8070044B1 (en) * | 2010-12-02 | 2011-12-06 | Rohm And Haas Electronic Materials Llc | Polyamine flux composition and method of soldering |
US8070046B1 (en) * | 2010-12-02 | 2011-12-06 | Rohm And Haas Electronic Materials Llc | Amine flux composition and method of soldering |
-
2011
- 2011-09-30 US US13/250,125 patent/US8430293B2/en not_active Expired - Fee Related
-
2012
- 2012-09-25 JP JP2012210449A patent/JP6058959B2/ja not_active Expired - Fee Related
- 2012-09-25 TW TW101135052A patent/TWI438177B/zh not_active IP Right Cessation
- 2012-09-28 KR KR1020120108917A patent/KR101992637B1/ko active IP Right Grant
- 2012-09-28 FR FR1259146A patent/FR2980726B1/fr not_active Expired - Fee Related
- 2012-09-28 DE DE102012019259A patent/DE102012019259A1/de not_active Withdrawn
- 2012-09-29 CN CN201210566313.4A patent/CN103071950B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR20130035954A (ko) | 2013-04-09 |
KR101992637B1 (ko) | 2019-06-25 |
CN103071950B (zh) | 2014-10-01 |
TW201323376A (zh) | 2013-06-16 |
FR2980726B1 (fr) | 2014-06-13 |
TWI438177B (zh) | 2014-05-21 |
DE102012019259A1 (de) | 2013-04-04 |
US20130082092A1 (en) | 2013-04-04 |
CN103071950A (zh) | 2013-05-01 |
FR2980726A1 (fr) | 2013-04-05 |
US8430293B2 (en) | 2013-04-30 |
JP2013079376A (ja) | 2013-05-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6050996B2 (ja) | 硬化性フラックス組成物およびはんだ付け方法 | |
JP6012955B2 (ja) | 硬化性アミンフラックス組成物およびはんだ付け方法 | |
KR102066454B1 (ko) | 폴리아민, 카복실산 플럭스 조성물 및 솔더링 방법 | |
JP5957213B2 (ja) | 硬化性フラックス組成物およびはんだ付け方法 | |
TWI438178B (zh) | 多胺助熔劑組成物及焊接方法 | |
JP6058959B2 (ja) | 硬化性アミン、カルボン酸フラックス組成物およびはんだ付け方法 | |
JP6071377B2 (ja) | アミン、カルボン酸フラックス組成物およびはんだ付け方法 | |
JP6071378B2 (ja) | フラックス組成物およびはんだ付け方法 | |
JP6012956B2 (ja) | アミンフラックス組成物およびはんだ付け方法 | |
KR20120060774A (ko) | 폴리아민 플럭스 조성물 및 솔더링 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20141209 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20141209 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20150903 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20160722 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160802 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20161102 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20161122 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20161208 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6058959 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |