TW201241226A - Film-forming method and film-forming apparatus for forming silicon oxide film on tungsten film or tungsten oxide film - Google Patents

Film-forming method and film-forming apparatus for forming silicon oxide film on tungsten film or tungsten oxide film Download PDF

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TW201241226A
TW201241226A TW100148503A TW100148503A TW201241226A TW 201241226 A TW201241226 A TW 201241226A TW 100148503 A TW100148503 A TW 100148503A TW 100148503 A TW100148503 A TW 100148503A TW 201241226 A TW201241226 A TW 201241226A
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film
gas
forming
tungsten
ruthenium
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TW100148503A
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TWI532871B (zh
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Jun Sato
Pao-Hwa Chou
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Tokyo Electron Ltd
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201241226 六、發明說明： 【發明所屬之技術領域】 本發明係-齡賴或是氧化 膜之方法以及成膜裝置。 7战乳化石夕 【先前技術】 (卿)於膜科體裝置之製財，有時諸鎢膜均成氧切 賴:於專利文獻1中記載了於鎢等金屬上形成氧化 先前技術文獻 專利文獻1日本特開2006-54432號公報 【發明内容】 )“ 但是，當於鎢(W)膜或是氧化鎢(w〇鑛上形成氧 膜之情況，於細蝴，由__或是氧化鶴之 速率慢，故有直到氧化賴開始成長之轉時間會變 長的情事。由於酿釀時間長，而有膜厚相較於在_外之底 層上所形成的氧化頻會變義情事，此外，如成臈初期階 段般當處树之吸附為不充分之狀餅，由於氧化劑會直接 接觸於絲造成敬到氧化，喊氧化魏增加之情事。 本發明係提供-種即使於鶴膜或是氧化鎢膜上形成氧 化石夕臈也可縮短氧化矽膜之醞釀時間的於鎢膜或是氧化鎢 膜上形成氧切膜之松、以及可實施軸财法之成膜裝 置。 、、 本發明之第1樣態之於鎢膜或是氧化鎢膜上形成氧化 石夕膜之方法，係具備有下㈣程：⑴於被處理體上形成鶏 201241226 .並hi 1 ()該種晶層上形成氧化W之製程 鑛)之製㈣加鏡被處理體並對編1膜或是氧化 上形成種魏缝體來於該顧或是氧化鶴膜 腊Ϊ· 之第2樣態之成膜裝置係—種於鶴膜或氧化鎮 =成氧化頻之成膜裝置，係具備有：處理室= 形成有搞料H化麵之被處 構 對:處理轉餘咖峨 一者以及含減狀鐘；加熱裝置，係 排繼，係對該處理室内進行排氣;以及控制；：制 叙體供給機構、該加紐置、以及該排氣裝置；此外，該 控制器係以在該處理室内對該被處理體實行申請專利範圍 第i至8項中任一項之於鎢膜或是氧化鶴膜上形成氧化石夕膜 之方法的方式來控制該氣體供給機構、該加熱裝置、以及嗲 排氣裝置。 本發明之附加目的以及功效將陳述於下面之敘述，且 習 一部分將可從該敘述獲得彰顯或是可藉由實施該發明來學 〇 本發明之目的以及功效尤其可藉由下面所指出之手段 以及結合而被理解與掌握。 【實施方式】 以下將參照相關圖式來說明基於上述發現而完成之本 發明之一實施例。在以下之敘述中，構成元件具有實質相同 功能以及配置者將被賦予相同參照符號，只有在必要時才進 201241226 行重複的說明。 (成膜方法） 圖u係顯示本發明之—實施_之於鶴膜 化頻之方法的—例之流糊，圖m係顯示 圖A中之乂驟3 一例之流程圖，圖2a〜圖2 首先，如圖1Α中之步驟〗所示般 鎢膜或是氧化鶴膜。以氧化嫣膜而言，可於被處理St 形成氧化_、也可為於被處频上所 f之f然氧化膜。此外，在本例中，作為被處理體 導體曰曰_如⑦晶圓W。於此抑B圓w之魏板丨上 本例之鎢膜2(圖2A)。 取 其-人’如圖1A中之步驟2所示般，於鎢膜2上形成種 晶層3(圖2B)。於本例中，係以下述方式形成了種晶層3。 首先，將形成有鶴膜2之硬晶圓W搬入成膜裝置之處 理室内。其次，提高處理室内之溫度’對形成祕膜2之石夕 晶圓W進行加熱’而對經加熱之鎢膜2纟面供給胺基石夕烷 系氣體。藉此，於鎢膜2之表面上形成種晶層3。 在胺基石夕烧系氣體之例子方面可舉出BAS(丁基胺基 矽烧）、BTBAS(雙特丁基胺基矽烧）、DMAS^曱基胺基矽 炫）、BDMAS(雙二甲基胺基石夕烧）、TDMAS(三二曱基胺基 矽烷）、DEAS(二乙基胺基矽烷）、BDEAS(雙二乙基胺基矽 烷）、DPAS(二丙基胺基矽烷）、DIpAS(二異丙基胺基矽烷） 等。於本例中係使用了 DIPAS。 步驟2之處理條件之一例如下： 6 201241226 DIPAS 流量：500sccm 處理時間：5min 處理溫度：25°C 處理壓力：532Pa(4Torr) 步驟2之製程在本說明書中以下稱為前流程。 步驟2係用以使得矽原料容易吸附於鎢膜2之製程。 此外二於本說明書中雖記載在步驟2中形成種晶層3，但實 際上幾乎並無成臈。種晶層3之厚度較佳為單原子層等級之 厚度程度。舉出具體的種晶層3厚度則為0.1η㈣上〇 3nm 以下。 拉具夂，如圖1A中之步驟3所示般，於種晶層 氧化物膜，於本例中係形成氧化矽膜4(圖2C) 一 步驟3之—例係示於圖1B。於本例中，在氧化石夕膜4 細交互供給含毅㈣料氣體與含有使 付石夕氧化之減劑的氣體—邊進行成膜之所謂的 彻(Atomic Layer Dep〇siti〇n)法或是 Μω(繼咖趾 Layer Deposition)法。在氧化劑方面可舉出 ==電="性化之活性種。於本射係使心 電漿所生成之Ο自由基。 2 首先，如步驟31所示般，對處理室内供給惰性氣體例 如氮⑽氣體來沖洗胺基魏系氣體。 Μ體例 其次如步驟32所示般，將石夕原料氣體供給於處理室内 ，於種曰日層3上軸辦。切顧氣體之 驟2所使用之胺基魏系氣體以外，尚可 =了 乂 院系氣體。在不含胺基之魏錢體扣可舉;含有基3 7 201241226 、SiH4、SiH6、Sl2H4、Si2H6、以 SimH2m+2(其中，m 係 3 以 上之自絲)之式子所表示之硬氫化物、以及以(其中 ’ η為3以上之自然數)之式子所表示之石夕氮化物中至少一 者的氣體。
此外，於本例中，胺基矽烷系氣體係使用例如DIpAS 〇 步驟32之處理條件的一例如下： DIPAS 流量：500sccm 處理時間：0.1 min 處理溫度：25它 處理壓力：532Pa(4Torr) 其次，如步驟33所示般，對處理室内供給惰性氣體例 如氮氣體來沖洗矽原料氣體。 —其次，如步驟34所示般，將含氧化劑之氣體供給於處 理至内將步驟32所形成之㈣加以氧化來形成氧化石夕膜 4。在步驟34巾作為氧化劑可舉出q2、〇3、H2〇、或是該 等經電漿所活性化之活性種。在本例中係使用由〇2電毅所 生成之0自由基。 其次，如步驟35所示般，對處理室内供給惰性氣體例 如氮氣體來沖洗含氧化劑之氣體。 其次’如步驟36所示般’判斷反覆次數是否為設定次 數。 當未達設定次數之情況(NO)係回到步驟32，從步驟32 反覆至步驟35。 8 201241226 理結束當達到嫩數之情況⑽），如圖1A所示般成為處 (酿釀時間） 圖3係顯示沉積時間與矽層膜厚之關係。圖3所示結 =底層為氧化石夕(Si〇2)之情況，不論底層為氧化石夕或是鎢 或，化鶴皆顯示_趨勢。其理由在於，藉由前流程(亦 即月女基魏綠财賴分解)所得之種晶層3形成於底層 上之故。矽層終究吸附於種晶層3上而成膜。 於本例所使用之前流程中的處理條件如下： DIPAS 流量：500sccm 處理時間：5min 處理溫度：400艺 處理壓力：53.2Pa(0.4Torr) 同樣用以形成本例所使用之石夕層的處理條件如下·· 單矽烷流量：500sccm 沉積時間：30min/45min/60miii 處理溫度：500°C 處理壓力：53.2Pa(0.4Ton·) 石夕層之膜厚係以沉積時間分別為3〇mm、45min、以及 60min時的3點來測定。 圖3中之線I係有前流程之情況，線π係無前流程之 情況下的結果。線I、II乃將所測定之3 _厚以最小平方 法來做直線近似而得之直線，式子如丁。 線I : y = 17.572χ 〜2〇855 ⑴ 線 II : y = 17.605χ — 34 929 9 201241226 如圖3所示般’相較於無前流程’當有前流程之情況 之矽層膜厚增加之趨勢變得明顯。 當上述(1)、（2)式設定為y=〇(亦即將矽層膜厚設定為 之時計算線I、II與沉積時間之交點係示於圖4。此外’ 圖4係將圖3中之虛線框A内加以放大之放大圖。 如圖4所示般，當有前流程之時，矽層之沉積係離處 理開始約1.2min(x与1.189)開始發生。相對地，當無前流程 之矽層之時，矽層之沉積係離處理開始約2.0min(x与1.984) 開始發生。 如此般，藉由對底層進行胺基矽烷系氣體之前流程， 可將酿釀時間從約2.0min縮短至約1.2min。 (氧化矽膜之SEM觀察） 其次’顯示以SEM觀察氧化矽膜之結果。 圖5A以及5B係使用上述一實施形態之於鎢膜或是氧 化鎢膜上形成氧化梦膜之方法來形成氧化石夕膜4之情況，圖 5A係顯示SEM照片，圖5B係顯示膜厚之圖。圖6a以及 6B係比較例，乃為無前流程之情況。氧化石夕膜4皆以成膜 之際的反覆次數定為20循環來進行賴。此外，雙方皆於 m之表社職㈣的氧傾(獨姻5。此氧化鶴膜 ，亦;無==接觸而自然形成之自然氧化膜。當然 ”丨小舣’依據上述一實施形態，於 =上隔者膜厚Unm之氧化鎢 计入種晶層3之氧化膜厚版氧化< 201241226 才子此’如圖6A以及圖6B所示般，依據益 之比較例，於鎢膜2上隔著膜厚i 5n 程 膜厚施m之氧化雜4。 之魏触5僅形成 況 如此般，依據上述—實施形態，相較於 ，醒辗時間會縮短，即使同樣為2〇循環，可於二J 形成約30%膜厚為厚之氧化矽膜4。 、’’’、上 此外，依據上述-實施形態，氧化鶴膜5之 1.3nm，而比較例之氧化鎢膜5之膜厚則增加至丨。馬 由此可知，依據上述一實施形態，尚可一同得到之 點為：於鎢膜2上形成氧化矽膜4之際也可抑制界面之· 鎢膜5的增膜。此被認為乃由於在上述一實施形態因種曰曰 層3形成於鶴膜2之表面上，而可抑制氧化劑直接於= 膜2、氧化鶴膜5之故。 " 圖7A以及7B係於石夕基板1上形成氧化石夕膜4之情況 ，圖7A為SEM照片，圖7B係顯示膜厚之圖。於本例中， 氧化矽膜4乃在處理條件相同、反覆次數也同為2〇循環之 晴况下成膜。此外，於石夕基板1之表面上形成有膜厚lnm 之自然氧化膜(Si02)6。 如圖7A以及7B所示般，此情況下，於矽基板丨上隔 著自然氧化膜6而形成膜厚4.1nm之氧化石夕膜4。 由上可知，依據上述一實施形態尚可得到以下之優點 圖8A〜8C係顯示半導體積體電路裝置内之構造體(例 如閘極)之截面圖。 201241226 如圖8A所示般’於閘極中有在多晶矽層7上積層著鎢 ，2之所s胃的多晶石夕金屬(p〇lymetal)構造之閘極。當於此多 =矽金屬構造之閘極側壁上形成氧化矽膜4的情況，於無前 流程的情況T，氧化頻4在多晶铺7上之膜厚與在^膜 &之臈厚的差會變大(圖8Β)。例如，如圖6β所示般，在 無前流程的比較例，氧化頻4之臈厚在鶴膜2上為3 〇細 。因此，氧化矽膜4之膜厚差異變大。 相對於此’如圖5Β所示般，依據上述一實施开义態 夕石=4謂厚在顧2上為3 —。因此氧切膜*在 ΐ二^謂厚與在鶴膜2上之膜厚的差相較於比較例 使於in’θ依據上述一實施形態，可縮短醒釀時間，即 或疋反_環數少的情況，也可 膜i更厚之氧化頻4，除了此優點以外，當於露^ 之造體上形成氧化頻4 了減> 氧化補之膜厚的差異，此為另一優點。 鎢腺W ’於喊氧化頻4之際，也可抑解面之氧化 。此乃由於’依據上述一實施形態係於二 ^43°3 氧化劑擴散的障壁:因此階段成為防止 接觸麵2難以直接 (成臈方法之其他例） 其次，說明於鶴膜上形成氧化物膜之方法的其他例。 12 201241226 圖9A〜9C係顯示圖1B中之步驟3的其他例之流程圖 (第1例） 如圖9A所示般’第1例係將圖1B所示步驟32、33 與步驟34、35加以更替之例。如此般，亦可於沖洗胺基石夕 烷系氣體(步驟31)之後供給氧化劑(步驟34)。 (第2例） 如圖9B所示般，第2例係省略沖洗胺基矽烷系氣體之 製程，於供給胺基石夕烧系氣體之後經過既定處理時間後，再 供給矽原料氣體之例。如此般，沖洗胺基矽烷系氣體之製程 也可省略。 (第3例） 如圖9C所示般，第3例係採用一邊同時供給含矽之矽 原料氣體與含有使得矽氧化之氧化劑的氣體一邊形成氧化 矽膜4之所謂的cvDfhemical Vapor Dep〇siti〇n)法來成膜 的例子。如此般，於氧化矽膜4之成膜上也可利用CVD法 〇 (成膜裝置） 其次，說明可實施上述一實施形態之於鎢膜或是氧化 鎢膜上形成氧化矽膜之方法的成膜裝置之一例。 圖10係示意顯示可實施一實施形態之於鎢膜或是氧化 鶴臈上形成氧化頻之方法的細裝置之—例之截面圖。 +如圖10所示般，成膜裝置100係具有下端呈開口之有 天^板的_體狀處理室1(H。處理室⑼之全體係例如由 石英所形成。於翻室101狀天花祕設有;5英製天花板 13 201241226 部’例如不鏽鋼成形為圓筒 體狀之岐s 103倾由〇型環等密封構件1〇4來連 咬管103係支撐著處理室⑼之下端。财管103下 方可對處理室1G1内插人石英製晶圓舟1G5(可多段 處理體之複數片例如50〜励片之半導體晶圓，於本 ，中為梦晶圓W)。晶圓舟1〇5係具有複數根支柱，拜 形j於支柱106之溝槽來支撑著複數片石夕晶圓w。3 晶圓舟105係經由石英製保溫筒107而載置於工作臺 上。工作臺⑽係被讀在貫賴如轉峨蓋部1〇9( 如之下端開口部)之旋轉轴丨丨。上。於旋轉轴( 之貝通料有例如磁性流體密封件⑴，將旋轉軸ιι〇 力口以氣密地密封並以可旋轉的方式支辟，蓋部⑽之周 =與岐s 103之下端部之間係介設有例如〇型環所構成 構件112。藉此，處理室1G1内之密封性受到保持。 ^ Ji1 〇係被裝設於例如由舟升降器等升降機構(未圖示） 1nQ二著之臂部113的前端。藉此，晶圓舟105以及蓋部 文到—體性升降而相對於處理室101内進行插入、脫 離0 成縣置100係具有：處理氣體供給麟1M，係對處 至丄01内供給處理用氣體；惰性氣體供給機構115 ’係對 處理室101内供給惰性氣體。 ^處理氣體供給機構114係包含有：胺基⑦财、氣體供 =117、石夕原料㈣供給源118、含氧化劑之氣體供給源 ，胺基矽烷系氣體之一例為二異丙基胺基矽烷(DIPAS) 石夕原料氣體之—例為二異丙基絲挪(DIPAS)，含氧化 201241226 劑之氣體之一例為氧(〇2)氣體。此外，當胺基矽烷系氣體與 矽原料氣體為相同之情況，亦可共用胺基矽烷系氣體供給源 117以及石夕原料氣體供給源118而僅設置其中一者。 惰性氣體供給機構115係包含有惰性氣體供給源120 。惰性氣體係利用於沖洗氣體等。惰性氣體之一例為氮 氣體。 胺基石夕烧系氣體供給源117係經由流量控制器i2la以 及開閉閥122a而連接於分散喷嘴123。分散噴嘴123係由 石英官所構成，將岐管1〇3側壁朝内側貫通而往上方彎曲來 垂直延伸j於分散喷嘴123之垂直部分，複數氣體流出孔 124係隔著既定間隔來形成。胺基矽烷系氣體係從各氣體流 出孔124朝水平方向而往處理室1〇1内大致均勻地流出。 此外，矽原料氣體供給源118也經由流量控制器121b 以及開閉閥122b而例如連接於分散喷嘴丨23。 含氧化劑之氣體供給源119係經由流量控制器121c以 及閥122c而連接於分散噴嘴125。分散喷嘴125係由 石英管所構成，將岐管1〇3側壁朝内侧貫通而往上方彎曲來 垂直延伸」於分散噴嘴125之垂直部分，複數氣體流出孔 126係隔著既定間隔來形成。含有氨之氣體餘各氣體流出 孔126沿f平方向朝處理室1〇1内大致均勻地流出。 惰性氣體供給源12〇係經由流量控制器⑵纽及開閉 閥l22d而連接於噴嘴128。噴嘴128係貫通岐管1〇3側壁 從/、剷Μ使得h性軋體沿水平方向來朝處理室内流出 〇 15 201241226 室1〇1内之相對於分散喷嘴123以及125在相 129,t讀設有用崎處理室⑼内進行魏之排氣口 趨=129係將處理室101側上T方向削除而形 田長狀。於處理室⑼對應於減口 129之部分係以包 =士π」29的方式利㈣接而裝鮮截面成形為〔字形 ⑴_範口盍體構件130。排氣口蓋體構件13〇係沿著處理室 貝’壁往上方延伸，而將氣體出〇 131設定在處理室⑼ 方。=氣體❿131係連接著包含真空栗等之排氣機構 。排_構132藉由對處理室1G1内進行排氣來達成處 理使用過之處職體的職，並將處理室⑼内之壓 為對應於處理之處理屋力。 ° 於處理室101之外周設有筒體狀之加熱裝置133。加熱 又，133係將供給於處理室1〇1内之氣體加以活性化，並對 收容在處理室1G1内之被處理體(本例祕晶圓W)進行加熱 〇 成膜裝置100之各部的控制係藉由例如微處理器（電腦 )所構成之控制器150來進行。控制器15〇係連接著由操作 者為了管縣職置100 _行指令輸人操料之鍵盤或 是對於成膜裝置100之運轉狀況以視覺化方式顯示之顯示 器等所構成之使用者介面151。 於控制器150連接者s己憶部152。記憶部152係儲存有 藉由控制器150之控制來實現在成膜裝置1〇〇所實行之各種 處理的控制程式、用以因應於處理條件而在成膜裝置1〇〇 之各構成部實行處理之程式(亦即配方）。配方係儲存於例如 記憶部152中之記憶媒體。記憶媒體可為硬碟、半導體記憔 201241226 體’也可為CD_R〇M、DVD、㈣記缝村攜式物。此 外，亦可從其他裝置例如經由專用配線來適宜地傳輸配方。 配方可視必要㈣基於來自使用者介面151之指示等從纪 憶部152讀取，以控制器150 |實行遵照所讀取之配方的處 理，成膜裝置⑽在控制器15G之控制下實施所希望之處理 〇 於本例中，在控制器150之控制下實行上述一實施形 態之於鶴膜献氧化舰上形成氧化頻之綠，例如依序 實行圖1Α、圖1Β、圖9Α〜目9C所示步驟之處理。 上述-，施形態之於鶴臈或是氧化鎢膜上形成氧化石夕 膜之方法可藉由圖10所示成膜裝置1〇〇來實施。 以上’依照-實施形態說明了本發明，惟本發明並不 限定於上述-實郷態，可作各種的變形。此外，本發明之 實施形態並非以上述一實施形態為唯一實施形態。 例如，氧化劑可取代氧氣體而改用Η2〇韓或臭氧㈣ 氣體，當為臭氧氣體之航，亦可於含氧化劑之氣體供給源 119具備用以產生臭氧氣體之臭氧產生器。 此外’亦可藉由電絲將〇2、〇3、Η2〇加以活性化， 而使得此等經活性化之活性種流出至抑圓w等被處理體 上。於此情況，亦可將於處理室1〇丨内部產生電漿之電漿產 生機構設置於例如處理室101之内部。 此外，於上述實施形態，在矽原料氣體方面說明了胺 基矽烷系氣體，而於種晶層3上形成矽層之際也可使用矽烷 系氣體。§中，關於以SimH2m+2(其中，m為3以上之自然 數)之式子所表示之錢化物以及以SinH2n(其中，n為3以 17 201241226 上之自餘)之式子所絲切氫化物，η 自然f之式子所表示之錢心以 擇二雜(s_、四魏(Si4Hi〇)、五 _4)、七魏版叫中至少—者；又以s5inHy中二 為3以上之自然數)之式子所表示之石夕氨化物可選擇環三石夕 、環四魏(_8)、環五魏剛。）、環六石夕燒 ⑶办2)、環七矽烧⑸邱4)中至少一者。 此外’上述-實施形態係顯示了將本發明適用在搭載 複數石夕晶圓W來整批地進行成膜之批次式成膜裝置的例子 ’惟不限定於此，也可適用於針對每—片晶圓進行成膜之 片式成膜裝置。 ' 此外，在被處理體方面不限定於半導體晶圓，本發明 也可適用於LCD玻璃基板等其他基板。 依據本發明，可提供一種即使於鎢膜或是氧化鎢膜上 形成氧化矽膜也可縮短氧化矽膜之醞釀時間的於鎢膜或是 氧化鎢膜上形成氧化矽膜之方法、以及可實施該成膜方法之 成膜裝置。 ' 此外’本發明可在不超脫其要旨之範圍内進行各種變 形。 本申請案係以2010年12月27曰對日本特許廳所提出 之曰本專利申請號第2010-290565號為基礎主張優先權利 益’其揭示内容全體被參照包含於本說明書中。 【圖式簡單說明】 伴隨之圖式將併入並構成說明書的一部份，其舉出了 201241226 發明實施例，並藉由連同上面所提到的一般說明以及下面會 提到的關於實施例之詳細敘述以解釋本發明之原理。 圖1A係顯示本發明之一實施形態之於鎢膜或是氧化 鶴膜上形成氧化石夕膜之方法的一例之流程圖，圖丨B係顯示 圖1A中之步驟3之一例的流程圖。 ，圖2A〜圖2C係示意顯示圖1A以及圖1B所示順序中 之被處理體狀態的截面圖。 圖3係顯示沉積時間與矽層膜厚之關係圖。 圖4係放大顯相3巾之虛線框A内之放大圖。 之圖圖5八係顯示圖式代用照片_)，圖犯係顯示膜厚 之圖圖6A係顯示圖式代用照片(SEM)，圖紐係顯示膜厚 之圖圖7A係顯示圖式代用照片剛，圖％係顯示膜厚 閘極)之截面二。係‘、、、員不半導積體電路裝置内之構造體（ 圖1〇係/示意驟3,他例之流程圖。 鶴膜上形魏切敗實猶彡態之於顧或是氧化 圖 ’的成膜裝置之一例的戴面| 【主要元件符號說明】 矽基板 鎢膜 種晶層 201241226 4 5 6 7 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 117 118 119 120 氧化矽膜 氧化鎢膜 自然氧化膜 多晶矽層 成膜裝置 處理室 天花板 岐管 密封構件 晶圓舟 支柱 保溫筒 工作臺 蓋部 旋轉軸 磁性流體密封件 密封構件 臂部 處理氣體供給機構 惰性氣體供給機構 胺基矽烷系氣體供給源 矽原料氣體供給源 含氧化劑之氣體供給源 惰性氣體供給源 201241226 121a〜121d 流量控制器 122a〜122d 開閉閥 123 分散喷嘴 124 氣體流出孔 125 分散喷嘴 126 氣體流出孔 128 喷嘴 129 排氣口 130 排氣口蓋體構件 131 氣體出口 132 排氣機構 133 加熱裝置 150 控制器 151 使用者介面 152 記憶部 W 碎晶圓 21

Claims (1)

  1. 201241226 七 、申請專利範圍： 1.種於鶴膜或氧化鶴膜上形成氧化$夕膜之方法，係 具備有下述製程： (1) 於被處理體上形成鶴膜或是氧化鶴膜之 (2) 於該鶴臈或是氧化賴上形成種晶狀製程；以及 (3) 於該種晶層上形成氧化石夕膜之製程； «亥(2)之裝私係力口熱該被處理體並對該嫣膜或是氧化鶴 膜之表面供給胺基魏系氣體來於該鶴膜或是氧化鶴膜上 形成種晶層之製程。 一 2.如申請專利範圍帛1項之於鎢膜或氧化鶴膜上形成 氧化石夕膜之;5Γ法’其巾該絲#财、氣體顧自含有脇（ 丁基胺基_⑦）、BTBAS(雙特了基絲#⑨）、DMAS(二甲 基胺基矽烷）、BDMAS(雙二曱基胺基矽烷）、TDMAS(三二 甲基胺基矽烷）、DEAS(二乙基胺基矽烷）、BDEAS(雙二乙 基細基石夕烧）、DPAS(二丙基胺基石夕炫）、以及dipas(二異丙 基胺基梦烧)中至少一者的氣體。 3. 如申請專概圍第1項之於賴或氧麟膜上形成 氧化矽膜之方法’其中該氧化矽膜係一邊交互地供給含石夕之 石夕原料氣體與含有使得矽氧化之氧化劑的氣體、一邊進行成 膜所得者。 4. 如申請專利範圍第1項之於鎢膜或氧化鎢膜上形成 氧化矽膜之方法’其中該氧化矽膜係一邊同時供給含矽之矽 原料氣體與含有使得矽氧化之氧化劑的氣體、一邊進行成膜 所得者。 ' 22 201241226 5.如申明專利範圍帛4項之於鶴膜或氧化嫣膜上形成 -化石夕膜之方法’其巾财原料氣體伽基魏系氣體或是 不含胺基之矽烷系氣體。 —6.如申料繼圍第5項之於賴或氧祕膜上形成 氧化石夕膜之方法’其中該胺基魏純體純自含有BAS( 丁基胺基魏）、btbas(雙特了基絲魏）、DMAS(二甲 基胺基矽烷）、BDMAS(雙二甲基胺基矽烧) 、TDMAS(三二 甲基胺基>5攸）、DEAS(二乙基胺基碎⑹、BDEAS(雙二乙 基胺基梦燒)、DPAS(q基胺齡烧)、以及DIpAS(二異丙 基胺基矽烷)中至少一者的氣體； 該不含胺基之矽烷系氣體係選自含有SiH2、SiH4、SiH6 Si2%、Si2H0、以SimH2m+2(其中，m為3以上之自然數） 之式子所表示之矽氫化物、以及以SinH2n(其中，n為3以上 之自然數)之式子所表示之矽氫化物中至少一者的氣體。 7.如申請專利範圍第6項之於鶴膜或氧化鶴膜上形成 氧化石夕膜之方法，其中該以SimH2m+2(其中，m為3以上之 自然數)之式子所表示之矽氫化物係選自三矽烷(Si3H8)、四 石夕烧(Si4H10)、五矽烷(si5H12)、六矽烷(Si6H14)、七矽烷(Si7H16) 中至少一者； 該以SinH2n(其中，n為3以上之自然數)之式子所表示 之矽氫化物係選自環三矽烷(Si3H6)、環四矽烷(Si4H8)、環五 矽烷(¾¾)、環六矽烷(Si6H12)、環七矽烷(Si7H14)中至少一 者。 23 201241226 8. 如㈣專概_〗項之於倾或氧祕膜上形成 氧化石夕膜之方法，其中該被處理體為半導體晶圓，該成膜方 法係被使用於半導體裝置之製程上。 9. -種成職置’雜鎢膜或氧化顧上形成氧化石夕 膜，具備有： .處理至’魏容賴有t辑賴是氧傾膜之被處理 體； 、氣體供給機構，係對該處理室内供給胺基石夕院系氣體 以及矽原料氣體之至少一者以及含氧化劑之氣體； 加熱裝置，係加熱該處理室内； 排氣裝置，係對該處理室内進行排氣；以及 控制器，係控制該氣體供給機構、該加熱裝置、以及 該排氣裝置； 此外，該控制器係以在該處理室内對該被處理體實 如申睛專利範圍第丨項之於频或是氧化麵上形成氧化 石夕膜之方法的方式來控制該氣體供給機構、該加 及該排氣裝置。 …、裝罝以 24
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