TW201130046A - Semiconductor device and process for production of semiconductor device - Google Patents
Semiconductor device and process for production of semiconductor deviceInfo
- Publication number
- TW201130046A TW201130046A TW099129938A TW99129938A TW201130046A TW 201130046 A TW201130046 A TW 201130046A TW 099129938 A TW099129938 A TW 099129938A TW 99129938 A TW99129938 A TW 99129938A TW 201130046 A TW201130046 A TW 201130046A
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor device
- manufacturing
- forming
- production
- film
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 10
- 238000004519 manufacturing process Methods 0.000 title abstract 5
- 238000000034 method Methods 0.000 title abstract 4
- 239000011229 interlayer Substances 0.000 abstract 2
- 239000010410 layer Substances 0.000 abstract 2
- 230000000116 mitigating effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009207206A JP2011060901A (ja) | 2009-09-08 | 2009-09-08 | 半導体装置および半導体装置の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW201130046A true TW201130046A (en) | 2011-09-01 |
Family
ID=43732335
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW099129938A TW201130046A (en) | 2009-09-08 | 2010-09-03 | Semiconductor device and process for production of semiconductor device |
Country Status (8)
Country | Link |
---|---|
US (1) | US20120171850A1 (zh) |
EP (1) | EP2477213A4 (zh) |
JP (1) | JP2011060901A (zh) |
KR (1) | KR20120067340A (zh) |
CN (1) | CN102484075A (zh) |
CA (1) | CA2772676A1 (zh) |
TW (1) | TW201130046A (zh) |
WO (1) | WO2011030661A1 (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9420694B2 (en) * | 2010-08-31 | 2016-08-16 | Ge Embedded Electronics Oy | Method for controlling warpage within electronic products and an electronic product |
CN102436133A (zh) * | 2011-08-17 | 2012-05-02 | 上海华力微电子有限公司 | 一种用于防止光掩模版应力传递致主图形移动的方法 |
CN102436134A (zh) * | 2011-08-29 | 2012-05-02 | 上海华力微电子有限公司 | 一种用于非透光切割道中防止光掩模版应力损坏的方法 |
JP6887244B2 (ja) | 2016-12-09 | 2021-06-16 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US10998418B2 (en) * | 2019-05-16 | 2021-05-04 | Cree, Inc. | Power semiconductor devices having reflowed inter-metal dielectric layers |
DE102019120692A1 (de) * | 2019-07-31 | 2021-02-04 | Infineon Technologies Ag | Leistungshalbleitervorrichtung und Verfahren |
EP4010927A1 (en) | 2019-08-09 | 2022-06-15 | Hitachi Energy Switzerland AG | Strain enhanced sic power semiconductor device and method of manufacturing |
CN117976698A (zh) * | 2024-03-28 | 2024-05-03 | 南京第三代半导体技术创新中心有限公司 | 高可靠性平面栅型碳化硅mosfet功率器件及其制造方法 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10125905A (ja) | 1996-10-17 | 1998-05-15 | Denso Corp | 半導体基板および半導体基板のそり矯正方法 |
US7282739B2 (en) * | 2002-04-26 | 2007-10-16 | Nissan Motor Co., Ltd. | Silicon carbide semiconductor device |
JP2003332270A (ja) * | 2002-05-15 | 2003-11-21 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP4303917B2 (ja) * | 2002-06-05 | 2009-07-29 | パナソニック株式会社 | 半導体装置の製造方法 |
KR20050001717A (ko) * | 2003-06-26 | 2005-01-07 | 주식회사 하이닉스반도체 | 반도체 소자의 트렌치형 소자분리막 형성 방법 |
US7407837B2 (en) * | 2004-01-27 | 2008-08-05 | Fuji Electric Holdings Co., Ltd. | Method of manufacturing silicon carbide semiconductor device |
JP4237086B2 (ja) * | 2004-03-22 | 2009-03-11 | 関西電力株式会社 | 電圧制御型半導体装置 |
DE102005023891B4 (de) * | 2004-05-24 | 2009-08-27 | DENSO CORPORATION, Kariya-shi | Verfahren zum Herstellen einer Siliziumkarbid-Halbleitervorrichtung und Siliziumkarbid-Halbleitervorrichtung |
JP2005337956A (ja) * | 2004-05-28 | 2005-12-08 | Yamaha Corp | 物理量センサとその製法 |
WO2007023950A1 (ja) * | 2005-08-26 | 2007-03-01 | Hitachi, Ltd. | 半導体装置の製造方法 |
EP1850396A3 (en) * | 2006-04-28 | 2008-09-17 | Nissan Motor Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP4710724B2 (ja) * | 2006-06-07 | 2011-06-29 | 株式会社デンソー | 半導体装置の製造方法 |
JP2008053363A (ja) * | 2006-08-23 | 2008-03-06 | Matsushita Electric Ind Co Ltd | 半導体基板およびその製造方法 |
JP5018044B2 (ja) * | 2006-11-28 | 2012-09-05 | パナソニック株式会社 | 半導体装置製造基材 |
JP4899829B2 (ja) * | 2006-11-30 | 2012-03-21 | パナソニック株式会社 | 半導体装置製造基材 |
JP5509520B2 (ja) * | 2006-12-21 | 2014-06-04 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法 |
JP2008244455A (ja) * | 2007-02-28 | 2008-10-09 | Denso Corp | 炭化珪素半導体装置およびその製造方法 |
JP4331773B2 (ja) * | 2007-03-20 | 2009-09-16 | Okiセミコンダクタ株式会社 | 半導体装置及びその製造方法 |
JP2007201499A (ja) * | 2007-04-06 | 2007-08-09 | Denso Corp | 半導体基板およびその製造方法 |
US7820534B2 (en) * | 2007-08-10 | 2010-10-26 | Mitsubishi Electric Corporation | Method of manufacturing silicon carbide semiconductor device |
JP2009054718A (ja) * | 2007-08-24 | 2009-03-12 | Fuji Electric Device Technology Co Ltd | 半導体装置の製造方法 |
JP5141227B2 (ja) * | 2007-12-12 | 2013-02-13 | 住友電気工業株式会社 | 半導体装置の製造方法 |
JP2009182271A (ja) * | 2008-01-31 | 2009-08-13 | Toshiba Corp | 炭化珪素半導体装置 |
JP4640439B2 (ja) * | 2008-04-17 | 2011-03-02 | 株式会社デンソー | 炭化珪素半導体装置 |
-
2009
- 2009-09-08 JP JP2009207206A patent/JP2011060901A/ja active Pending
-
2010
- 2010-08-24 WO PCT/JP2010/064213 patent/WO2011030661A1/ja active Application Filing
- 2010-08-24 CN CN2010800398076A patent/CN102484075A/zh active Pending
- 2010-08-24 CA CA2772676A patent/CA2772676A1/en not_active Abandoned
- 2010-08-24 KR KR1020127006763A patent/KR20120067340A/ko not_active Application Discontinuation
- 2010-08-24 US US13/394,770 patent/US20120171850A1/en not_active Abandoned
- 2010-08-24 EP EP10815258.8A patent/EP2477213A4/en not_active Withdrawn
- 2010-09-03 TW TW099129938A patent/TW201130046A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
US20120171850A1 (en) | 2012-07-05 |
CA2772676A1 (en) | 2011-03-17 |
JP2011060901A (ja) | 2011-03-24 |
EP2477213A1 (en) | 2012-07-18 |
KR20120067340A (ko) | 2012-06-25 |
EP2477213A4 (en) | 2014-05-14 |
WO2011030661A1 (ja) | 2011-03-17 |
CN102484075A (zh) | 2012-05-30 |
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