TW201110414A - Group iii nitride semiconductor optical element and epitaxial substrate - Google Patents
Group iii nitride semiconductor optical element and epitaxial substrate Download PDFInfo
- Publication number
- TW201110414A TW201110414A TW099123335A TW99123335A TW201110414A TW 201110414 A TW201110414 A TW 201110414A TW 099123335 A TW099123335 A TW 099123335A TW 99123335 A TW99123335 A TW 99123335A TW 201110414 A TW201110414 A TW 201110414A
- Authority
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- Prior art keywords
- layer
- based semiconductor
- gallium nitride
- type gallium
- type
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 350
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 112
- 230000003287 optical effect Effects 0.000 title claims abstract description 106
- 239000000758 substrate Substances 0.000 title claims description 125
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 167
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 165
- 239000002019 doping agent Substances 0.000 claims abstract description 81
- 239000011777 magnesium Substances 0.000 claims abstract description 38
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 37
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910002601 GaN Inorganic materials 0.000 claims description 250
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 185
- 230000004888 barrier function Effects 0.000 claims description 28
- -1 bismuth nitride Chemical class 0.000 claims description 19
- 230000000903 blocking effect Effects 0.000 claims description 17
- 229910052797 bismuth Inorganic materials 0.000 claims description 16
- 229910052733 gallium Inorganic materials 0.000 claims description 13
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 10
- 229910002704 AlGaN Inorganic materials 0.000 claims description 8
- 239000000470 constituent Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 238000005121 nitriding Methods 0.000 claims 2
- 239000013078 crystal Substances 0.000 description 31
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 28
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 26
- 238000005253 cladding Methods 0.000 description 17
- 238000009826 distribution Methods 0.000 description 15
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 15
- 229910052757 nitrogen Inorganic materials 0.000 description 14
- 230000004913 activation Effects 0.000 description 13
- 229910021529 ammonia Inorganic materials 0.000 description 12
- 238000010586 diagram Methods 0.000 description 12
- 239000007789 gas Substances 0.000 description 12
- 241000238631 Hexapoda Species 0.000 description 11
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 11
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 9
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 8
- 239000002994 raw material Substances 0.000 description 8
- 239000000523 sample Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000000969 carrier Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- MQBKFPBIERIQRQ-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene;cyclopentane Chemical compound [Mg+2].C=1C=C[CH-]C=1.[CH-]1[CH-][CH-][CH-][CH-]1 MQBKFPBIERIQRQ-UHFFFAOYSA-N 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 238000001947 vapour-phase growth Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 101000878595 Arabidopsis thaliana Squalene synthase 1 Proteins 0.000 description 1
- 101100328519 Caenorhabditis elegans cnt-2 gene Proteins 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 240000002329 Inga feuillei Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 235000013844 butane Nutrition 0.000 description 1
- 229910021386 carbon form Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
- H01S5/320275—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth semi-polar orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/0014—Measuring characteristics or properties thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
- H01S5/2031—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
- H01S5/3213—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities asymmetric clading layers
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geometry (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009167177A JP5635246B2 (ja) | 2009-07-15 | 2009-07-15 | Ｉｉｉ族窒化物半導体光素子及びエピタキシャル基板 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201110414A true TW201110414A (en) | 2011-03-16 |
Family
ID=43449384
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099123335A TW201110414A (en) | 2009-07-15 | 2010-07-15 | Group iii nitride semiconductor optical element and epitaxial substrate |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8304793B2 (enExample) |
| EP (1) | EP2456026A1 (enExample) |
| JP (1) | JP5635246B2 (enExample) |
| KR (1) | KR20120024955A (enExample) |
| CN (1) | CN102474076B (enExample) |
| TW (1) | TW201110414A (enExample) |
| WO (1) | WO2011007777A1 (enExample) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103959580A (zh) * | 2011-10-24 | 2014-07-30 | 住友电气工业株式会社 | 氮化物半导体发光元件 |
| TWI581454B (zh) * | 2016-01-04 | 2017-05-01 | 錼創科技股份有限公司 | 半導體發光元件 |
| TWI588876B (zh) * | 2011-05-18 | 2017-06-21 | 住友電氣工業股份有限公司 | Compound semiconductor substrate |
| TWI683448B (zh) * | 2015-02-05 | 2020-01-21 | 日商同和電子科技股份有限公司 | Iii族氮化物半導體發光元件及其製造方法 |
| TWI816186B (zh) * | 2021-09-28 | 2023-09-21 | 晶元光電股份有限公司 | 發光元件及其製造方法 |
| TWI839293B (zh) * | 2021-09-28 | 2024-04-11 | 晶元光電股份有限公司 | 發光元件及其製造方法 |
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007080896A (ja) * | 2005-09-12 | 2007-03-29 | Sanyo Electric Co Ltd | 半導体素子 |
| JP5553035B2 (ja) * | 2011-01-24 | 2014-07-16 | 住友電気工業株式会社 | 窒化ガリウム系半導体レーザ素子 |
| JP5503574B2 (ja) * | 2011-02-21 | 2014-05-28 | 住友電気工業株式会社 | レーザダイオード |
| JP5361925B2 (ja) * | 2011-03-08 | 2013-12-04 | 株式会社東芝 | 半導体発光素子およびその製造方法 |
| JP2012248575A (ja) * | 2011-05-25 | 2012-12-13 | Sumitomo Electric Ind Ltd | 窒化物半導体レーザ素子、エピタキシャル基板、及び窒化物半導体レーザ素子を作製する方法 |
| JP2013033930A (ja) * | 2011-06-29 | 2013-02-14 | Sumitomo Electric Ind Ltd | Ｉｉｉ族窒化物半導体素子、及び、ｉｉｉ族窒化物半導体素子の製造方法 |
| JP5252042B2 (ja) | 2011-07-21 | 2013-07-31 | 住友電気工業株式会社 | Ｉｉｉ族窒化物半導体発光素子、及びｉｉｉ族窒化物半導体発光素子を作製する方法 |
| US8946788B2 (en) | 2011-08-04 | 2015-02-03 | Avogy, Inc. | Method and system for doping control in gallium nitride based devices |
| JP5668647B2 (ja) * | 2011-09-06 | 2015-02-12 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体発光素子およびその製造方法 |
| JP2013102043A (ja) * | 2011-11-08 | 2013-05-23 | Sumitomo Electric Ind Ltd | 半導体レーザ素子、及び、半導体レーザ素子の作製方法 |
| JP5940355B2 (ja) * | 2012-04-19 | 2016-06-29 | ソウル セミコンダクター カンパニー リミテッド | ｐ型窒化物半導体層の製造方法 |
| KR102062382B1 (ko) | 2012-04-19 | 2020-01-03 | 서울반도체 주식회사 | 반도체 장치 및 이를 제조하는 방법 |
| JP5699983B2 (ja) * | 2012-04-27 | 2015-04-15 | 住友電気工業株式会社 | 窒化ガリウム系半導体を作製する方法、ｉｉｉ族窒化物半導体デバイスを作製する方法、及びｉｉｉ族窒化物半導体デバイス |
| WO2013165134A1 (en) * | 2012-05-01 | 2013-11-07 | Seoul Opto Device Co., Ltd. | Method for fabricating p-type aluminum gallium nitride semiconductor |
| JP2014086507A (ja) * | 2012-10-22 | 2014-05-12 | Sumitomo Electric Ind Ltd | 窒化物半導体レーザ、窒化物半導体レーザを作製する方法 |
| TWI589018B (zh) * | 2012-11-19 | 2017-06-21 | 新世紀光電股份有限公司 | 氮化物半導體結構 |
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2009
- 2009-07-15 JP JP2009167177A patent/JP5635246B2/ja not_active Expired - Fee Related
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2010
- 2010-07-13 EP EP10799835A patent/EP2456026A1/en not_active Withdrawn
- 2010-07-13 KR KR1020127000699A patent/KR20120024955A/ko not_active Ceased
- 2010-07-13 CN CN201080031731.2A patent/CN102474076B/zh not_active Expired - Fee Related
- 2010-07-13 WO PCT/JP2010/061839 patent/WO2011007777A1/ja not_active Ceased
- 2010-07-14 US US12/836,117 patent/US8304793B2/en active Active
- 2010-07-15 TW TW099123335A patent/TW201110414A/zh unknown
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI588876B (zh) * | 2011-05-18 | 2017-06-21 | 住友電氣工業股份有限公司 | Compound semiconductor substrate |
| CN103959580A (zh) * | 2011-10-24 | 2014-07-30 | 住友电气工业株式会社 | 氮化物半导体发光元件 |
| CN103959580B (zh) * | 2011-10-24 | 2016-09-14 | 住友电气工业株式会社 | 氮化物半导体发光元件 |
| TWI683448B (zh) * | 2015-02-05 | 2020-01-21 | 日商同和電子科技股份有限公司 | Iii族氮化物半導體發光元件及其製造方法 |
| TWI581454B (zh) * | 2016-01-04 | 2017-05-01 | 錼創科技股份有限公司 | 半導體發光元件 |
| TWI816186B (zh) * | 2021-09-28 | 2023-09-21 | 晶元光電股份有限公司 | 發光元件及其製造方法 |
| TWI839293B (zh) * | 2021-09-28 | 2024-04-11 | 晶元光電股份有限公司 | 發光元件及其製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2011023541A (ja) | 2011-02-03 |
| US20110114916A1 (en) | 2011-05-19 |
| EP2456026A1 (en) | 2012-05-23 |
| KR20120024955A (ko) | 2012-03-14 |
| WO2011007777A1 (ja) | 2011-01-20 |
| CN102474076A (zh) | 2012-05-23 |
| JP5635246B2 (ja) | 2014-12-03 |
| CN102474076B (zh) | 2014-06-18 |
| US8304793B2 (en) | 2012-11-06 |
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