JP6453542B2 - 半導体装置及びこれの製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 191
- 238000004519 manufacturing process Methods 0.000 title description 16
- 150000004767 nitrides Chemical class 0.000 claims description 141
- 239000000758 substrate Substances 0.000 claims description 98
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 84
- 229910052799 carbon Inorganic materials 0.000 claims description 84
- 238000000034 method Methods 0.000 claims description 80
- 239000013078 crystal Substances 0.000 claims description 32
- 229910002601 GaN Inorganic materials 0.000 claims description 26
- 229910052720 vanadium Inorganic materials 0.000 claims description 22
- HJUGFYREWKUQJT-UHFFFAOYSA-N tetrabromomethane Chemical compound BrC(Br)(Br)Br HJUGFYREWKUQJT-UHFFFAOYSA-N 0.000 claims description 18
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 9
- 229910052594 sapphire Inorganic materials 0.000 claims description 9
- 239000010980 sapphire Substances 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 230000010355 oscillation Effects 0.000 claims description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 8
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 263
- 239000007789 gas Substances 0.000 description 78
- 239000011777 magnesium Substances 0.000 description 48
- 229910002704 AlGaN Inorganic materials 0.000 description 42
- 125000004429 atom Chemical group 0.000 description 37
- 239000002994 raw material Substances 0.000 description 24
- 229910021478 group 5 element Inorganic materials 0.000 description 18
- 239000002019 doping agent Substances 0.000 description 13
- 238000005253 cladding Methods 0.000 description 12
- 239000000203 mixture Substances 0.000 description 12
- 238000009792 diffusion process Methods 0.000 description 11
- 239000012535 impurity Substances 0.000 description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 8
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 7
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 7
- 125000004433 nitrogen atom Chemical group N* 0.000 description 7
- 230000007547 defect Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000002484 cyclic voltammetry Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- -1 nitride compound Chemical class 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
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Description
成長時設定温度:1180℃以上1370℃以下
基板表面温度:1070℃以上1250℃以下
成長時の原料ガス圧:4000以上20000Pa以下
V族元素の原料/III族元素の原料比:5以上600以下
CBr4の供給量:7×10−8mol/min以上1.7×10−5mol/min以下
Cp2Mg供給量:1.3×10−7mol/min〜1.6×10−7mol/min
III族元素の原料ガス(TMG及びTMAl)の供給量:5×10−5mol/min
成長時設定温度:1180℃以上1230℃以下
基板表面温度:1070℃以上1110℃以下
成長時の原料ガス圧:4000以上20000Pa以下
V族元素の原料/III族元素の原料比:5以上600以下
CBr4の供給量:7×10−8mol/min以上1.7×10−5mol/min以下
Cp2Mg供給量:1.3×10−7mol/min〜1.6×10−7mol/min
III族元素の原料ガス(TMG及びTMAl)の供給量:5×10−5mol/min
2・・バッファ層
3・・n型窒化物系半導体層
4・・発光層
5・・p型窒化物系半導体層
6・・p型電極
7・・n型電極
Claims (11)
- 反応管内にAlxGa1−xN(0<x≦1)のIII族原子の原料ガスを所定期間供給する第1の工程、およびV族原子の原料ガス、炭素の原料ガス、およびMgの原料ガスを同時に所定期間供給する第2の工程を交互に行うことにより、主面がC面あるいはこれに同等の結晶面に対して0.1%以下のオフセット角を有する基板上にIII族原子の原子層とV族原子の原子層とを交互に成長させることを含み、
前記基板は、サファイア基板、シリコン基板、炭化ケイ素基板、窒化ガリウム基板、窒化アルミニウム基板のいずれかから構成される、III-V族窒化物半導体層の成長方法。 - 前記第1の工程において、Mgの原料ガスも併せて供給する、請求項1に記載のIII-V族窒化物半導体層の成長方法。
- 前記炭素の原料ガスは四臭化炭素を含む、請求項1に記載のIII-V族窒化物半導体層の成長方法。
- 前記III-V族窒化物半導体層の層厚は0.1μm以上である、請求項1に記載のIII-V族窒化物半導体層の成長方法。
- V族原子の原料ガスとIII族原子の原料ガスの比を5以上600以下とする、請求項1に記載のIII-V族窒化物半導体層の成長方法。
- 基板と、
前記基板上に位置するn型窒化物半導体層、活性層及びp型窒化物半導体層の積層を有し、
前記p型窒化物半導体層は、III族原子であるAlとGa、およびV族原子であるNを含むAlxGa1−xN(0<x≦1)であり、
前記p型窒化物半導体層において、前記III族原子を含む原子層、および炭素、Mg、ならびに前記V族原子を含む原子層が交互に積層され、
前記基板は、サファイア基板、シリコン基板、炭化ケイ素基板、窒化ガリウム基板、窒化アルミニウム基板のいずれかから構成され、主面はC面及びこれに同等の結晶面に対して0.1%以下のオフセット角を有する、窒化物系半導体発光素子。 - 前記p型窒化物半導体層の上に位置し、前記p型窒化物半導体層に接するp型電極をさらに有する、請求項6に記載の窒化物系半導体発光素子。
- 前記窒化物系半導体発光素子は半導体レーザである、請求項6に記載の窒化物系半導体発光素子。
- 前記p型窒化物半導体層の層厚は、0.2μm以上である、請求項8に記載の窒化物系半導体発光素子。
- 前記p型窒化物半導体層の層厚は、発振する波長の1倍〜3倍の長さの厚み以上である、請求項8に記載の窒化物系半導体発光素子。
- 前記p型窒化物半導体層は、超格子構造で構成されている、請求項6に記載の窒化物系半導体発光素子。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014003759A JP6453542B2 (ja) | 2013-02-14 | 2014-01-10 | 半導体装置及びこれの製造方法 |
US14/180,446 US9705287B2 (en) | 2013-02-14 | 2014-02-14 | Method of fabricating a P type nitride semiconductor layer doped with carbon |
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US7192737B2 (en) | 2002-03-29 | 2007-03-20 | Xoma Technology Ltd. | Methods and materials for increasing expression of recombinant polypeptides |
WO2020017223A1 (ja) * | 2018-07-20 | 2020-01-23 | ソニーセミコンダクタソリューションズ株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
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US5679965A (en) | 1995-03-29 | 1997-10-21 | North Carolina State University | Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same |
JPH08288577A (ja) | 1995-04-17 | 1996-11-01 | Hideo Kawanishi | 光反射構造及びその製造法、並びに光デバイス |
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