JP7043802B2 - 垂直共振型面発光レーザ、垂直共振型面発光レーザを作製する方法 - Google Patents
垂直共振型面発光レーザ、垂直共振型面発光レーザを作製する方法 Download PDFInfo
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Description
基板13:微傾斜のオフGaAs基板。
基板13の主面13aは、GaAsの(001)面を基準にして<110>方向に傾斜する。
下部積層体33の第1下部積層体35及び第2下部積層体37。
第1下部層37a/第2下部層37b:アンドープのAl(x)Ga(1-x)As/Al(y)Ga(1-y)Asの交互積層、(組成:0.8<x≦1、0.1≦y<0.3)
下部コンタクト層39:Siドープn型AlGaAs。
第1下部層35a/第2下部層35b:SiドープのAl(x)Ga(1-x)As/Al(y)Ga(1-y)Asの交互積層、(組成:0.8<x≦1、0.1≦y<0.3)
第1下部積層体35及び第2下部積層体37の積層数は、合計で25周期である。
下部スペーサ領域17:アンドープとして成長されるAl(z)Ga(1-z)As層(0.1<z<0.4)、厚さ5~25nm。
下部スペーサ領域17の上面における表面粗さの二乗平均平方根(RMS)値は、0.25nm以下である。この表面粗さは、製造工程において、下部スペーサ領域17を成長した後に活性層の成長は行わずに成長炉から取り出されたエピタキシャル基板の表面を、原子間力顕微鏡(AFM)を用いた測定により得られる。
活性層19の量子井戸構造MQW。
井戸層19a/障壁層19b:アンドープのAlGaInAs井戸層/AlGaAsバリア層。
井戸層19a:Al組成0.01~0.08、In組成0.08~0.18、膜厚2~7nm。
障壁層19b:Al組成0.1~0.4、膜厚5~9nm。
活性層19は、井戸層19a及び障壁層19bにわたる平均で2~5×1016cm-3の炭素濃度を含む。炭素濃度は、二次イオン質量分析(SIMS)法による深さ方向の分析により測定される。
上部スペーサ領域21:アンドープとして成長されるAl(z)Ga(1-z)As層(組成:0.1<z<0.4)、厚さ5~25nm。
電流狭窄構造25。
導電領域25a:AlAs又はAlGaAs(0.98のAl組成)。
絶縁領域25b:アルミニウム酸化物、ガリウム酸化物。
上部積層体23の第1上部積層体27及び第2上部積層体29。
第1上部層27a/第2上部層27b:CドープのAl(u)Ga(1-u)As/Al(v)Ga(1-v)Asの交互積層、(組成:0.8<u≦1、0.1≦v<0.3)
第1上部層29a/第2上部層29b:CドープのAl(u)Ga(1-u)As/Al(v)Ga(1-v)Asの交互積層、(組成:0.8<u≦1、0.1≦v<0.3)
第1上部積層体27及び第2上部積層体29の積層数は、合計で23周期である。
上部コンタクト層31:Cドープp型AlGaAs。
p-電極(49a):Ti/Pt。
n-電極(49b):例えばAu/Ge/Ni。
成長条件の例示。
半導体結晶成長のための基板温度:摂氏670~750度。
V族原料とIII族原料の供給量比:V/III比=100~160。
成長速度:0.4~0.7nm/秒。
これに従って、摂氏670度以上の基板温度で下部分布ブラッグ反射器のための半導体層を含む下部積層53を基板51の主面51a上に成長する。
雰囲気ガス:V族原料のアルシン。
温度変更率:10~30度/分。
成長中断の時間:3~20分。
この成長中断P3RDの期間では、成長温度より低い温度のヒ素雰囲気に下部積層53の表面(例えばAl(y)Ga(1-y)As(組成:0.1≦y<0.3)を曝して、高温成長により形成された下部積層53の表面ステップを保つ。
半導体層(57c)の成長条件の例示。
成長に用いる原料:TMAl、TMGa、AsH3。
成長のための基板温度:摂氏570~590度。
V族原料とIII族原料の供給量比:V/III比=100~160。
成長速度:0.4~0.7nm/秒。
半導体層(57c)は、下地の下部積層53と界面(41b)を形成する。下部積層53は、成長中断中に、成長温度より低い温度のヒ素雰囲気に曝されている。半導体積層(57c)は、全体にわたる平均で2~5×1016cm-3の炭素濃度を含む。この炭素濃度(2~5×1016cm-3)を半導体積層(57)に提供できる成長条件は、0.25nm以下のRMS値を半導体積層(57)内の界面に提供できる。
半導体積層(57b)の成長条件の例示。
成長に用いる原料:TMAl、TMGa、TMIn(トリメチルインジウム)、AsH3。
成長のための基板温度:摂氏570~590度。
V族原料とIII族原料の供給量比:V/III比=100~160。
成長速度:0.4~0.7nm/秒。
井戸層19aのための半導体層:Al組成0.01~0.08、In組成0.08~0.18、膜厚2~7nm。
障壁層19bのための半導体層:Al組成0.1~0.4、膜厚5~9nm。
半導体積層(57b)は、下地の半導体層(57c)と界面を形成する。半導体層(57c)は、例えば0.25nm以下のRMS値)を有する。中間積層57のための低い成長温度は、井戸層19aのための半導体層を成長する下地が0.25nm以下のRMS値を引き継ぐことを可能にする。半導体積層(57)は、全体にわたる平均で2~5×1016cm-3の炭素濃度を含む。この炭素濃度を成長される半導体に提供できる成膜条件は、RMS値の引き継ぎを容易にする。
半導体層(57a)の成長条件の例示。
成長に用いる原料:TMAl、TMGa、AsH3。
成長のための基板温度:摂氏570~590度。
V族原料とIII族原料の供給量比:V/III比=100~160。
成長速度:0.4~0.7nm/秒。
半導体積層(57a)は、全体にわたる平均で2~5×1016cm-3の炭素濃度を含む。
雰囲気ガス:V族原料のアルシン。
温度変更率:10~30度/分。
成長中断の時間:3~20分。
成長条件の例示。
半導体結晶成長のための基板温度:摂氏670~750度。
V族原料とIII族原料の供給量比:V/III比=100~160。
成長速度:0.4~0.7nm/秒。
これに従って、摂氏670度以上の基板温度で上部分布ブラッグ反射器のための半導体層を含む上部積層59を中間積層57上に成長する。
デバイスD1V:スペーサ領域及び活性層の成長温度は摂氏650度、RMS値は0.31nm、活性層の炭素濃度は1×1016cm-3。
デバイスD2V:スペーサ領域及び活性層の成長温度は摂氏620度、RMS値は0.34nm、活性層の炭素濃度は1×1016cm-3。
デバイスD3V:スペーサ領域及び活性層の成長温度は摂氏590度、RMS値0.22nm、活性層の炭素濃度は2×1016cm-3。
デバイスD4V:スペーサ領域及び活性層の成長温度は摂氏570度、RMS値は0.20nm、活性層の炭素濃度は5×1016cm-3。
デバイスD5V:スペーサ領域及び活性層の成長温度は摂氏560度、RMS値は0.19nm、活性層の炭素濃度は1×1017cm-3。
Claims (3)
- 垂直共振型面発光レーザであって、
構成元素としてGa及びAsを含むIII-V化合物半導体を備える主面を有する基板と、
前記基板の前記主面上に設けられたポストと、
を備え、
前記ポストは、構成元素としてGa及びAsを含むIII-V化合物半導体を備える下部スペーサ領域と、2×1016cm-3以上5×1016cm-3以下の範囲の炭素濃度を有し前記下部スペーサ領域上に設けられた量子井戸構造を有する活性層と、
を備え、
前記量子井戸構造は、AlGaInAs井戸層と、AlGaAs障壁層とを含み、
前記下部スペーサ領域は、前記基板と前記活性層との間に設けられ、
前記下部スペーサ領域の上面における表面粗さの二乗平均平方根値が0.25nm以下である、垂直共振型面発光レーザ。 - 前記基板上に設けられた下部分布ブラッグ反射器のための半導体層を含む下部積層体を更に備え、
前記基板の前記主面は、GaAsを備え、
前記下部積層体は、前記下部スペーサ領域と前記基板との間に設けられ、
前記下部スペーサ領域は、前記下部積層体に接触を成し、
前記下部スペーサ領域の前記III-V化合物半導体は、前記活性層に接触を成すAlGaAs層を備える、請求項1に記載された垂直共振型面発光レーザ。 - 垂直共振型面発光レーザを作製する方法であって、
構成元素としてGa及びAsを含むIII-V化合物半導体を備える基板を準備する工程と、
摂氏670度以上の基板温度で下部分布ブラッグ反射器のための半導体積層を前記基板の主面上に成長する工程と、
有機金属を含む原料を成長炉に供給して、III族元素としてInを含まずIII族元素としてAlを含む第1化合物半導体層を摂氏590度以下の基板温度で前記半導体積層上に成長する工程と、
有機金属を含む原料を成長炉に供給して、III族元素としてInを含み活性層のための第2化合物半導体層を摂氏590度以下の基板温度で前記第1化合物半導体層上に成長する工程と、
を備え、
前記活性層は、2×1016cm-3以上5×1016cm-3以下の範囲の炭素濃度を有し、AlGaInAs井戸層及びAlGaAs障壁層を含む量子井戸構造を有し、
前記第1化合物半導体層の上面における表面粗さの二乗平均平方根値が0.25nm以下である、垂直共振型面発光レーザを作製する方法。
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