TW201036101A - Substrate carrier for mounting substrates - Google Patents

Substrate carrier for mounting substrates Download PDF

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Publication number
TW201036101A
TW201036101A TW99102510A TW99102510A TW201036101A TW 201036101 A TW201036101 A TW 201036101A TW 99102510 A TW99102510 A TW 99102510A TW 99102510 A TW99102510 A TW 99102510A TW 201036101 A TW201036101 A TW 201036101A
Authority
TW
Taiwan
Prior art keywords
substrate
carrier
frame
disk
accommodating
Prior art date
Application number
TW99102510A
Other languages
English (en)
Inventor
Mario Pruestel
Stefan Schubert
Hermann Schlemm
Daniel Decker
Andre Lux
Matthias Uhlig
Silvia Krautwald
Original Assignee
Roth & Rau Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Roth & Rau Ag filed Critical Roth & Rau Ag
Publication of TW201036101A publication Critical patent/TW201036101A/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67333—Trays for chips
    • H01L21/67336—Trays for chips characterized by a material, a roughness, a coating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6734—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders specially adapted for supporting large square shaped substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting substrates others than wafers, e.g. chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67363—Closed carriers specially adapted for containing substrates other than wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67383—Closed carriers characterised by substrate supports

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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201036101 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種用於保持一或數個基板之基板載體，特別 係用於運輸時保持太陽能電池晶圓，及於具鍍層及/或蝕刻過程之 處理室内、於個別程序步驟運轉當中保持太陽能電池晶圓。 【先前技術】 以鍍層及/或蝕刻過程處理基板時，必須對具體環境作特殊之 溫度與壓力設定。各處理過程除於一基板表面上，各以技術上預 定之方式施加具體影響外，通常亦影響處理室中之所有表面。先 ◎ 前技術中，曾嘗試，於處理室中做基板佈置與儀器佈置，使各處 理過程至少主要作用於具體之基板表面上。實務上經常應用一種 簡單方法，即遮住無需鍍層之儀器部分，例如以鋁箔遮住。其終 歸係一相對粗糙之遮蔽，無法遮住靠近基板保持器附近之基板面 積。 特別係於工作郎奏快速及重複利用基板保持器之處理過程 中，於多次使用時，基板保持器持績暴露於易侵入性程序參數中， 會造成快速磨耗及導致基板保持器不堪用。相對高溫造成基板保 持器受應力及變形，易起化學反應之處理造成基板保持器表面不 〇 良改變。太陽能晶圓係作為基板裝設於基板載體上，由於熱傳導， 基板保持器之相對高熱質量經常導致個別太陽能晶圓不良之溫度 輪廓，可能造成品質下降。 胤又 美國專利案US 6,227,3 72 B1公開一種用於承載電性元件之元 件載體，由一具一框結構之承載框架構成，元件載體形成開口， 開口中可放置容納元件之托盤。托盤由半結晶之聚合物構成，不 適合高溫處理過程。 ' 美國專利案US 2006/0006095 A1公開一種通用式基板保持 4 201036101 器’可用於儲存、處理及用於運輸多種電子元件。基板保持器具 一相對於固定侧壁之可調侧壁。可調側壁決定基板一預設之開口。 【發明内容】 本發明之目的係於提出一種用於保持一或數個基板之基板載 體，特別係用於保持太陽能電池晶圓，所提出之基板載體用於以 侵入性媒介進行基板鍍層及/或蝕刻過程之場合，及/或用於高溫場 合，具高穩定性及高使用壽命。此外，基板載體對基板之熱影響 最小。 Ο ο 本發明藉申請專利範圍第一項所述之特徵達成發明目的。本 發明之有利延伸說明於巾請專利範HJ之各附屬仙，並於以下對 本發明較佳實施例包括圖式所做之說明中詳細陳述。 根據本發明，基板雜由-承_架及至少—基板容納盤構 成。承載框架由-自我支撐及耐撓曲之框結構構成，其具互相保 持角度之縱向支撐條與橫蚊雜’其材料能耐熱至_c仍保 持形狀穩定。於施加更高之處理溫度時，可能需要使助對耐更 南溫度’而形狀仍祕相對之高溫下保持㈣龄之材料。基板 容納盤制於承韻架上，設計辭板，絲板可位於基板 谷納盤之上表面。於承载框架及基板容納盤間設有舰緣元件。 縱向支撐條錢蚊撐條之具舰構，及其他設計上提供之元 件，例如外緣支撐條，可大幅變化。重要者係 姑 ，，亦要達到充分穩定與抗撓曲性。為滿足此二= 架之熱質量必須盡可能小。 变^承載框 承載框架之_元件，縱向支撐條與橫向支 :計上提供之元件，可有利地藉由卡榫及 槽=他 有利之作法為，利用額外之螺_定 =相定位。 固定方式，確保幾何上之穩固。 一 術上類似之框架 5 201036101 根，本發明設計成薄板之絲容__ =曲片’其於接觸點間僅於-製程技 =撓曲料板上表面可放置基板或放置多個基板。其作法可 於基板容_設置適當空隙，用以容納厚度射恤〇1咖 ^ . mm間《太陽能電池晶圓。於基板容納盤上亦可設置適 疋位輔助錢機，如插銷或⑽，㈣定位基板或太陽能晶圓田。 可例如於轉框架中設置習知之㈣狀喊元件， 納盤間之隔熱元件，確保於承載_與基板容 間盡可能具良好之熱絕緣。 根據本發明所提出之解決方案產生一種於運送過程中，及於 個別處理步驟運行當中，妥善且穩定之基板保持。特別於熱過程 中可確保較短之處理時間。太陽能電池晶圓可很快地被加散至所 需之處理溫度，且個別太陽能電池晶圓之溫度輪廓極為均勾，這 係由於薄板及承載框架之熱質量㈣甚小，减生熱影響，或散 有利之作法為，將作為基板容納盤之薄板設計成很大，使得 位於熱源下方之承載框架不受直接熱輻射。為達此目的，亦可於 基板容納盤附近，以及於承載框架上方及/或下方，設置分離之額 外遮蓋。 作為於處理程序中穩定之材料，可使用鋼材、鈦金屬或使用 鋁材、陶瓷、CFC (CFC =碳纖維強化之碳）或其複合材料，作為 承載框架及基板容納盤之材料。材料必須能承受具體之鍍層及蝕 刻處理，並能耐技術上需要之處理溫度，以及容易清洗。 基板載體一奴®成使基板僅接受來自上方之處理過程。若 有需要使基板及太陽能電池晶圓之下表面亦接受處理，則可使薄 板於基板區相對於底下之承載框架至少具一鏤空。經由承載框 201036101 架，及經由鏤空，基板下表面至少亦可局部接受處理。 可用有利之方式針對具體基板調整基板容納盤，而讓基板載 體保持不變使其可應用於所有基板容納盤。由於基板容納盤之 特殊板狀設計’及其料設計，其對峨予之祕件適應非常快 速，而質量較大之承載框架於基板容納盤下方受保護，與基板容 納盤^產生熱性連接’並對溫度改變相對不起反應。於此基礎上， 基板受承載框架及基板容納盤之熱影響很小，可忽略。 根據本發明之基板載體可於批量生產車間及連續生產車間中 具體應用於太陽能電池晶圓之處理私戈鍍層上，亦可應用於所有 其他平整或適當平整之基板之處理及/或鍍層上。特別有利者係用 於處理溫度相對較高之場合，w或易起化學反應之環境中。 【囷式簡單說明】 以下將根據-實施麟本發明做進—步說明。相關式之圖 二中為-立體視圖’顯示—祕保持25個太陽能電池晶圓之基板 載體。圖二顯示無基板容納盤之承載框架。 【實施方式】 〇 於圖—中’依照實施例之基板載體係顯示成由上方觀看之立 體，°基板載體基本上由—下方承載框架i及—接觸於其上之基 板容納盤2構成。於基板容納盤2中加工出例如5x5個空隙，形 •狀如鏤空3，具侧邊覆蓋緣4，㈣總尺寸為158xl58随，用以 '保持尺寸為156><156酿之方形太陽能電池晶圓5。於圖-中僅於 下方鏤空3放置-太陽能電池晶圓5。板狀基板容納盤：之厚度為 1.2 mm ’且覆蓋緣4相對於基板容納盤2上平面下沈〇 5 _，使 太陽能電池晶圓5以厚度〇.5 mm妥善地定位於鏤空2中。 基板容納盤2整體覆蓋承載框架！，使承載框架受屏蔽，不受 裝設於上方之熱源影響。必要時，仍可用額外遮蓋保護承載框架i 7 201036101 足側邊區域，抵擋熱輻射。 於圖二中所顯示之承載 成角度布置⑽峨6 實施例中，承載框架上== 軌之外部支撐條8。承載it;:，元偷 圖示之插置元件，以•之方式藉由未詳細 連接。 ㈣係針榫崎應之㈣，互相定位及彼此 架1重?t係’设置熱絕緣元件9，均勻分佈於承載框 2整個上表面，板狀之基板容納盤2接觸賴絕緣元件上。於 承f匡架1上設找位插銷1G，協助基板容納盤2於承載框架'】 上疋位’定位插銷10齧入於基板容納盤2上對應之孔U中。具 體實施可配合特殊及位置情況調整，十分容易。 、 承載框架1之元件係由- CFC_複合材料製成，且基板容納盤 2由-碳複合材料構成，至少能保持形狀穩定至。教絕緣 元件9由石墨銷構成。 μ 碳-複合材料100°/。由纖維強化之碳材（CFC)構成。直徑僅若 干微米之碳祕或石墨纖維混人—純碳基材。該材料具高機麵 定性，其係由於碳基材被外界作用之力承受，且分佈於材質中广 對本發明而言，麟狀材料具成本優勢，且滿足基板載體 於形狀穩定上之要求。特別係可掌控於實施例中所提出之承載框 架1之熱膨脹。此外，材料對具體應用之鍍層處理與蝕刻處理具 抵抗力，且較容易清洗。 於基板容納盤2中之鏤空3係例如向下開放，其使得太陽能 電池晶圓5之下表面’除太1%也電池晶圓5接觸於側邊覆蓋緣4 上之面積以外’皆由下方穿過承載框架丨，暴露予必要之鍍層處理 201036101 與蝕刻處理。若無需要，於基板容納盤2中之鏤空3可向下封閉， • 亦即覆蓋緣4被一下沈面積取代。 -· 【主要元件符號說明】 1 承載框架 2 基板容納盤 3 鏤空 4 側邊覆蓋緣 5 太陽能電池晶圓 6 縱向支撐條 7 橫向支撐條 8 外部支撐條 9 熱絕緣元件 10 定位插銷 11 對應孔
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Claims (1)

  1. 201036101 七 1. 、申請專利範圍： -種用於保持_基板之基域體 少-基板容納盤⑵構成，其特徵為，承及至 ^支撐且柷撓曲之減構’框結構由互喊纽之支= ⑷與㈣支撐條⑺構成，其材料之形狀穩定性可 8〇〇°C ’基板容納盤（2)接觸於承載框架（1)上，且」= 板狀，使太陽能f池晶圓⑴可定位於絲容納盤⑵又^上 =面’且於承載赌⑴與基板容納盤⑵帛設有熱 件（9)。 2. 根據巾請專利範m第丨項所述之基板載體，其特徵為，基板容❹ 納盤⑵設計成使基板制於触巾，或藉由擋塊式定位輔 助進行基板定位。 3. 根據申請專利範圍第i項所述之基板載體，其特徵為，基板容 納盤（2)設計成使得位於熱源下方之承載框架（1)不受直接 熱輕射影響’及/或於基板容納盤附近，以及於承載框架上方設 置分離之額外遮蓋，使得位於熱源下方之承載框架（〇不受 直接熱輻射影響。 4·根據申請專利範圍第1項所述之基板載體，其特徵為，承載框 Ο 架（1)之元件及基板容納盤（2)由鋼材、鈦金屬、鋁材 '陶 瓷、CFC (CFC =碳纖維強化碳）或其複合材料製成。 . 5.根據申請專利範圍第1項所述之基板載體，其特徵為’基板容 . 納盤（2)於基板區相對於位於下方之承載框架（1)至少具一 鏤空，基板下表面可透過鏤空至少局部接受處理。
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WO2010085949A3 (de) 2013-03-21
CN102859678A (zh) 2013-01-02
WO2010085949A2 (de) 2010-08-05

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