CN102859678A - 用于保持基板的基板载体 - Google Patents

用于保持基板的基板载体 Download PDF

Info

Publication number
CN102859678A
CN102859678A CN201080006252.5A CN201080006252A CN102859678A CN 102859678 A CN102859678 A CN 102859678A CN 201080006252 A CN201080006252 A CN 201080006252A CN 102859678 A CN102859678 A CN 102859678A
Authority
CN
China
Prior art keywords
receiving member
substrate
bearing frame
substrate receiving
described substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201080006252.5A
Other languages
English (en)
Inventor
马里奥·普吕斯特尔
斯特凡·舒伯特
赫尔曼·施莱姆
马蒂亚斯·乌利希
安德烈·卢克斯
丹尼尔·德克尔
西尔维娅·克劳特瓦尔德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meyer Burger Germany GmbH
Original Assignee
Roth and Rau AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Roth and Rau AG filed Critical Roth and Rau AG
Publication of CN102859678A publication Critical patent/CN102859678A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67333—Trays for chips
    • H01L21/67336—Trays for chips characterized by a material, a roughness, a coating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6734—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders specially adapted for supporting large square shaped substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting substrates others than wafers, e.g. chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67363—Closed carriers specially adapted for containing substrates other than wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67383—Closed carriers characterised by substrate supports

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Packaging Frangible Articles (AREA)

Abstract

本发明涉及一种用于保持基板的基板载体，所述基板载体由承载框架(1)和至少一个基板容纳件(2)构成。承载框架(1)具有自支撑的而且挠曲刚性的框架结构，该框架结构由彼此成角度地布置的纵向支撑条(6)与横向支撑条(7)构成，所述纵向支撑条(6)和横向支撑条(7)由直至800℃仍形状稳定的材料构成。基板容纳件(2)平放在承载框架(1)上，并且以如下方式呈板状地构造，即，太阳能电池晶圆(5)可以定位在基板容纳件(2)的上侧上。在承载框架(1)与基板容纳件(2)之间存在有热绝缘元件(9)。承载框架(1)的元件和基板容纳件(2)由钢、钛、铝、陶瓷、CFC(CFC＝碳纤维增强的碳)或者由上述材料制成的复合材料来构成。

Description

用于保持基板的基板载体
技术领域
本发明涉及一种用于保持一个或多个基板的基板载体，特别是用于在运输期间以及在具备镀层工艺和/或者蚀刻工艺的工艺处理室内的各个工艺步骤进行期间，对太阳能电池晶圆加以保持。
背景技术
在利用镀层工艺和/或者蚀刻工艺处理基板时，要求的是：调整出具体环境的特殊的温度与压力。在此，除了基板的各工艺应以技术上所设置的方式具体施加影响的表面外，各工艺通常还作用于工艺处理室内的所有表面。依照现有技术，尝试的是：以如下方式将基板与装置系统布置在工艺处理室内部，即，使各工艺至少主要作用于具体的基板表面上。在实践中经常应用简单的手段—即是将不应被镀层的装置构件例如以铝箔遮盖。但这终归仅是相对粗略的遮盖，这种粗略的遮盖无法盖住在基板保持件处紧邻基板周围的面。
特别是在高周期频率的而且重复利用基板保持件的工艺中，在多次经历工艺时，基板保持件持续经受通常有侵蚀性的工艺参数，这可能导致快速磨损和报废。相对高的温度导致基板保持件受应力并且变形，化学性的工艺导致在基板保持件的表面发生不希望的变化。基于热传导，基板保持件的相对高的热质量经常导致各个作为基板布置在基板载体上的太阳能晶圆产生不希望的温度变化曲线，由此，可能造成品质下降。
US 6,227,372 B1给出一种用于容纳电气部件的部件载体，该部件载体由具有框架结构的承载框架构成，方式为：形成如下的开口，用于容纳部件的插件被置入所述开口中。插件由半结晶的聚合物构成，这种半结晶的聚合物不适于高温工艺。
US 2006/0006095 A1介绍了一种通用的基板保持件，用以存放、处理和运输多个电子部件。基板保持件相对于固定的侧壁具有可调校的侧壁。该可调校的侧壁限定了基板保持件的预先确定的开口。
发明内容
本发明基于如下任务，即，提出一种用于保持一个或多个基板的基板载体，特别是用于保持太阳能电池晶圆，所提出的基板载体在用于以侵蚀性介质对基板进行镀层和/或蚀刻工艺时，和/或者在高温下，具有高稳定性和高使用寿命。此外，基板载体应对基板产生尽可能小的热影响。
本发明通过权利要求1所述特征来解决所述任务。本发明的有利的改进方案在从属权利要求中表明特征，并且在下面结合对本发明的优选实施例连同附图所做的说明而做出详细阐释。
根据本发明，基板载体由承载框架和至少一个基板容纳件构成。承载框架由自支撑的而且挠曲刚性的框架结构构成，该框架结构具有互相成角度地布置的纵向支撑条与横向支撑条，所述纵向支撑条和横向支撑条由直至800℃仍保持形状稳定的材料构成。在应用更高的工艺温度时，可能需要的是，使用即便在相应更高的温度下仍具有足够的形状稳定性的材料。基板容纳件平放在承载框架上，呈板状以如下方式构造，即，使基板能够定位在基板容纳件的上侧上。在承载框架与基板容纳件之间设有热绝缘元件。纵向支撑条与横向支撑条的具体结构以及其他结构上所设置的元件(例如外缘支撑条)可以在很宽的范围内变化。决定性的是，即使在较高工艺温度下，也要达到足够的稳定性与挠曲刚度。在此，承载框架必须具有尽可能小的热质量。
承载框架的各个元件—纵向支撑条与横向支撑条以及其他结构上所设置的元件能够借助榫头和所配属的凹部彼此互相定位地布置。为了对几何布置方案加以紧固，额外的螺栓拧合件或技术上类似的止动件对于框架结构而言是具有优点的。
根据本发明构造为薄板的基板容纳件平放在承载框架上，也就是说，基板容纳件被以如下方式薄如箔片状地构造，即，基板容纳件在支承点之间仅在以工艺技术上容许的区域发生挠曲。在薄板的上侧上，可以定位有一个或多个基板。这能够以如下方式进行，即，在基板容纳件中加工出适当的凹部，用以容纳例如厚度在0.1mm与0.6mm之间的太阳能电池晶圆。在基板容纳件上，也可以设置有适当的定位辅助件或挡块(如销或板条)，用以定位基板或太阳能晶圆。
例如可以在承载框架中设置有公知的销状陶瓷元件，来作为承载框架与基板容纳件之间的热绝缘元件，该热绝缘元件确保在承载框架与基板容纳件之间尽可能良好的热去耦。
根据本发明的解决方案实现了一种在运输期间以及在各个工艺步骤进行期间，对基板安全而且稳定的保持方案。特别是在热工艺中能保证很短的工艺时间。太阳能电池晶圆能很快地被加热至所需的处理温度，并且各个太阳能电池晶圆的温度变化曲线非常均匀，这是因为薄板及承载框架以其很小的的热质量，而不产生热影响，或产生非常小的热影响。
有利的是，将作为基板容纳件的薄板以如下方式构造得很大，即，相对于热源位于下方的承载框架不经受直接热辐射。为达此目的，也可在基板容纳件旁边，以及在承载框架的上方和/或者下方，设置有单独的额外的遮盖件。
作为用于承载框架的元件及基板容纳件的工艺稳定的材料，可使用钢、钛、必要时还有铝、陶瓷、CFC(CFC＝碳纤维增强的碳)或由上述材料构成的复合材料，来作为承载框架及基板容纳件的材料。材料应当对于特殊应用的镀层及蚀刻工艺以及工艺技术温度是有耐受能力，并且易于清洁。
基板载体一般以如下方式构造，即，使基板仅从上方经受处理工艺。如果需要使基板及太阳能电池晶圆的底侧也经受处理工艺的话，则可使薄板在基板区域中相对于位于其下方的承载框架具有至少一个开口。于是，穿过承载框架以及开口，基板的底侧同样可以至少部分地得到处理。
能以有利的方式将基板容纳件与特殊的基板相适配，而基板载体以保持不变的方式应用于所有基板容纳件。基于基板容纳件的特殊的呈板状的并且进而很薄的实施方案，该基板容纳件非常快速地与所给定的热条件相适配，而与基板容纳件热去耦的质量很大的承载框架受保护地位于基板容纳件的下方，并对温度变换的反应相对迟钝。基于此，基板受承载框架及基板容纳件的热影响小得可以忽略。
根据本发明的基板载体可以在批量生产设备中—如在连续式生产设备中具体地应用于对太阳能电池晶圆的处理和/或者镀层，还有可应用于对所有其他平面式的或适当的平整的基板进行处理和/或者镀层。特别有利的是在处理温度相对较高和/或者反应性环境的情况下。
附图说明
下面，在实施例中对本发明做详细阐述。所附的是，图1示出用于保持25个太阳能电池晶圆的基板载体的透视图。图2示出不带基板容纳件的承载框架。
具体实施方式
在图1中，以从上方看的透视图示出依照实施例的基板载体。基板载体基本上由下方承载框架1和平放在承载框架1上的基板容纳件2构成。将呈开口3形式的例如5×5个凹部加工到基板容纳件2中，所述凹部具有侧向托架4，用于以158×158mm的尺寸来保持尺寸为156×156mm的矩形太阳能电池晶圆5。在图1中仅在下部开口3中置入太阳能电池晶圆5。板状基板容纳件2的厚度为1.2mm，并且托架4相对于基板容纳件2的上侧下沉0.5mm，从而太阳能电池晶圆5以0.5mm的厚度可靠地定位在开口2中。
基板容纳件2整体覆盖承载框架1，使得布置在上方的热源受到屏蔽。在需要时，还能以额外的遮盖件来保护承载框架1的侧向区域免受热辐射。
在图2中示出不带基板容纳件2的承载框架1，从而能看到具有互相成角度布置的纵向支撑条6及横向支撑条7的、自支撑的而挠曲刚性的框架结构。在实施例中，承载框架1为实现自支撑的、挠曲刚性的而且低质量的结构而具有其他结构性元件。在纵向上构造为导轨的外部支撑条8属于这样的结构性元件。承载框架1所有元件以公知的方式借助未详细图示的插塞元件，特别是借助榫头与对应的凹部，来彼此定位和彼此连接。
对于本发明重要的是，设置有如下的热绝缘元件9，热绝缘元件9均匀分布在承载框架1的整个表面之上，板状的基板容纳件2平放在热绝缘元件9上。为将基板容纳件2定位在承载框架1上，在承载框架1上设有定位销10，定位销10嵌接到基板容纳件2中的所配属的孔11中。具体的实施方案可以容易地与特殊的及位置的条件相适配。
承载框架1的元件是由CFC复合材料制成，并且基板容纳件2由碳复合材料构成，所述碳复合材料至少直至800℃仍保持形状稳定。热绝缘元件9由石墨销构成。
碳复合材料最高100％地由纤维增强的碳(CFC)构成。将直径仅为几微米的碳纤维或石墨纤维混入纯碳基质。该材料具有很高的机械稳定性，这是因为碳基质吸收从外部作用的力，并且在复合体中分摊。
对于所述任务而言，所采用的材料是成本低廉的，并且满足对于基板载体的形状稳定性的要求。特别地，对于实施例中所提出的承载框架1可以掌控热膨胀。此外，材料对于特殊应用的镀层工艺与蚀刻工艺具有抵抗力的，并且相对容易清洁。
基板容纳件2中的开口3例如是朝下敞开的，由此可行的是，使太阳能电池晶圆5的底侧，除了太阳能电池晶圆5平放在侧向托架4上的面外，均从下方穿过承载框架1经受所需的镀层工艺和蚀刻工艺。如果不需要的话，基板容纳件2中的开口3朝下可为封闭的，也就是说，托架4由下陷的面来替代。

Claims (5)

1.用于保持基板的基板载体，所述基板载体由承载框架(1)和至少一个基板容纳件(2)构成，其特征在于，所述承载框架(1)具有自支撑的而且挠曲刚性的框架结构，所述框架结构由彼此成角度地布置的纵向支撑条(6)与横向支撑条(7)构成，所述纵向支撑条(6)与横向支撑条(7)由直至800℃仍形状稳定的材料构成，所述基板容纳件(2)平放在所述承载框架(1)上，并且以如下方式呈板状地构造，即，太阳能电池晶圆(5)能够定位在所述基板容纳件(2)的上侧上，并且在所述承载框架(1)与所述基板容纳件(2)之间存在有热绝缘元件(9)。
2.根据权利要求1所述的基板载体，其特征在于，所述基板容纳件(2)以如下方式构造，即，所述基板平放在凹部中，或者所述基板利用呈挡块形式的定位辅助件来定位。
3.根据权利要求1所述的基板载体，其特征在于，所述基板容纳件(2)以如下方式来构造，和/或单独的额外的遮盖件存在于所述基板容纳件的旁边和所述承载框架的上方，使得相对于热源处在下方的所述承载框架(1)不经受直接的热辐射。
4.根据权利要求1所述的基板载体，其特征在于，所述承载框架(1)的元件和所述基板容纳件(2)由钢、钛、铝、陶瓷、CFC(CFC＝碳纤维增强的碳)或者由上述材料制成的复合材料构成。
5.根据权利要求1所述的基板载体，其特征在于，所述基板容纳件(2)在所述基板的区域内相对于位于所述基板容纳件(2)下方的承载框架(1)具有至少一个开口，穿过所述开口所述基板的底侧能至少部分地得到处理。
CN201080006252.5A 2009-01-31 2010-01-31 用于保持基板的基板载体 Pending CN102859678A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009006779.5 2009-01-31
DE102009006779 2009-01-31
PCT/DE2010/000138 WO2010085949A2 (de) 2009-01-31 2010-01-31 Substratträger zur halterung von substraten

Publications (1)

Publication Number Publication Date
CN102859678A true CN102859678A (zh) 2013-01-02

Family

ID=40719730

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080006252.5A Pending CN102859678A (zh) 2009-01-31 2010-01-31 用于保持基板的基板载体

Country Status (4)

Country Link
CN (1) CN102859678A (zh)
DE (1) DE202009001817U1 (zh)
TW (1) TW201036101A (zh)
WO (1) WO2010085949A2 (zh)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104726839A (zh) * 2015-03-27 2015-06-24 京东方科技集团股份有限公司 基板固定装置
CN108138314A (zh) * 2015-09-21 2018-06-08 应用材料公司 基板载体、以及溅射沉积设备和其使用方法
CN110190018A (zh) * 2019-07-01 2019-08-30 深圳市石金科技股份有限公司 一种拼接式的硅片承载框
CN113328010A (zh) * 2021-05-28 2021-08-31 安徽华晟新能源科技有限公司 一种太阳能电池的制备方法
CN114774888A (zh) * 2021-09-30 2022-07-22 苏州迈为科技股份有限公司 Pecvd镀膜载板及镀膜设备
US20230307568A1 (en) * 2020-08-03 2023-09-28 Suzhou Maizheng Techonology Co. Ltd Coating apparatus, method and system, solar cell, module, and power generation system

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5706439B2 (ja) 2009-12-11 2015-04-22 カーゲーテー・グラフィート・テヒノロギー・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング 基板支持体
DE102011017566A1 (de) 2010-04-22 2011-12-01 Von Ardenne Anlagentechnik Gmbh Substratbehandlungsanlage und Substrathalter dafür
US9214576B2 (en) 2010-06-09 2015-12-15 Solarcity Corporation Transparent conducting oxide for photovoltaic devices
JP5901110B2 (ja) * 2010-10-06 2016-04-06 三木ポリマー株式会社 面実装電子部品の搬送用トレー
US9800053B2 (en) 2010-10-08 2017-10-24 Tesla, Inc. Solar panels with integrated cell-level MPPT devices
DE102010052689A1 (de) * 2010-11-26 2012-05-31 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Substrathalter für die Oberflächenbehandlung von Substraten und Verwendung des Substrathalters
DE102011006833A1 (de) 2011-04-06 2012-10-11 Roth & Rau Ag Substratträger
US9054256B2 (en) 2011-06-02 2015-06-09 Solarcity Corporation Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
CN102412108B (zh) * 2011-10-31 2013-11-27 无锡绿波新能源设备有限公司 高吸附拼接式碳纤维u型槽
WO2014055781A1 (en) 2012-10-04 2014-04-10 Silevo, Inc. Photovoltaic devices with electroplated metal grids
US9865754B2 (en) 2012-10-10 2018-01-09 Tesla, Inc. Hole collectors for silicon photovoltaic cells
US9281436B2 (en) 2012-12-28 2016-03-08 Solarcity Corporation Radio-frequency sputtering system with rotary target for fabricating solar cells
US10074755B2 (en) 2013-01-11 2018-09-11 Tesla, Inc. High efficiency solar panel
US9219174B2 (en) 2013-01-11 2015-12-22 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US9624595B2 (en) 2013-05-24 2017-04-18 Solarcity Corporation Electroplating apparatus with improved throughput
DE102013217441B4 (de) 2013-09-02 2019-11-28 Singulus Technologies Ag Substratträger
US10309012B2 (en) 2014-07-03 2019-06-04 Tesla, Inc. Wafer carrier for reducing contamination from carbon particles and outgassing
DE102015110854A1 (de) * 2015-07-06 2017-01-12 Von Ardenne Gmbh Verfahren, Substrathaltevorrichtung und Prozessieranordnung
KR20170086637A (ko) 2014-11-26 2017-07-26 폰 아르데네 게엠베하 기판 유지 장치, 기판 이송 장치, 처리 조립체 및 기판 처리 방법
US9899546B2 (en) 2014-12-05 2018-02-20 Tesla, Inc. Photovoltaic cells with electrodes adapted to house conductive paste
KR20170137160A (ko) * 2015-04-09 2017-12-12 어플라이드 머티어리얼스, 인코포레이티드 프로세싱될 기판들을 위한 캐리어 시스템
US9761744B2 (en) 2015-10-22 2017-09-12 Tesla, Inc. System and method for manufacturing photovoltaic structures with a metal seed layer
US9842956B2 (en) 2015-12-21 2017-12-12 Tesla, Inc. System and method for mass-production of high-efficiency photovoltaic structures
DE102016111234B4 (de) * 2016-06-20 2018-01-25 Heraeus Noblelight Gmbh Vorrichtung für die thermische Behandlung eines Substrats sowie Trägerhorde und Substrat-Trägerelement dafür
DE102018101439B4 (de) * 2018-01-23 2020-01-09 RF360 Europe GmbH Substratträger für einen Reflow-Ofen und Verwendung eines Substratträgers
US11190128B2 (en) 2018-02-27 2021-11-30 Tesla, Inc. Parallel-connected solar roof tile modules
CN112368412A (zh) * 2018-06-25 2021-02-12 应用材料公司 用于基板的载体及用于承载基板的方法
DE102021003330B3 (de) 2021-06-28 2022-09-01 Singulus Technologies Aktiengesellschaft Substratträger

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5012924A (en) * 1990-03-19 1991-05-07 R. H. Murphy Company, Inc. Carriers for integrated circuits and the like
TW353854B (en) * 1994-03-14 1999-03-01 Minnesota Mining & Mfg Component tray with removable insert
US5731230A (en) * 1995-03-28 1998-03-24 Micron Technology, Inc. Method for processing and/or shipping integrated circuit devices
US6036023A (en) * 1997-07-10 2000-03-14 Teradyne, Inc. Heat-transfer enhancing features for semiconductor carriers and devices
US6227372B1 (en) 1998-04-30 2001-05-08 Peak International, Inc. Component carrier tray for high-temperature applications
MY130407A (en) * 2000-12-01 2007-06-29 Texchem Pack M Sdn Bhd Tray for storing semiconductor chips
EP1556209A4 (en) * 2002-10-09 2009-07-01 Entegris Inc HIGH-FIXED HIGH-TEMPERATURE MATERIALS FOR DEVICE PROCESSING SYSTEMS
US20060006095A1 (en) 2004-07-08 2006-01-12 White Robert J Jr Universal storage tray for electronic components
JP2007042908A (ja) * 2005-08-04 2007-02-15 Sumitomo Electric Ind Ltd ウェハ保持体およびそれを搭載したウェハプローバ

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104726839A (zh) * 2015-03-27 2015-06-24 京东方科技集团股份有限公司 基板固定装置
US9957605B2 (en) 2015-03-27 2018-05-01 Boe Technology Group Co., Ltd. Substrate fixing apparatus
CN108138314A (zh) * 2015-09-21 2018-06-08 应用材料公司 基板载体、以及溅射沉积设备和其使用方法
CN110190018A (zh) * 2019-07-01 2019-08-30 深圳市石金科技股份有限公司 一种拼接式的硅片承载框
US20230307568A1 (en) * 2020-08-03 2023-09-28 Suzhou Maizheng Techonology Co. Ltd Coating apparatus, method and system, solar cell, module, and power generation system
CN113328010A (zh) * 2021-05-28 2021-08-31 安徽华晟新能源科技有限公司 一种太阳能电池的制备方法
CN114774888A (zh) * 2021-09-30 2022-07-22 苏州迈为科技股份有限公司 Pecvd镀膜载板及镀膜设备
CN114774888B (zh) * 2021-09-30 2024-02-23 苏州迈为科技股份有限公司 Pecvd镀膜载板及镀膜设备

Also Published As

Publication number Publication date
DE202009001817U1 (de) 2009-06-04
TW201036101A (en) 2010-10-01
WO2010085949A3 (de) 2013-03-21
WO2010085949A2 (de) 2010-08-05

Similar Documents

Publication Publication Date Title
CN102859678A (zh) 用于保持基板的基板载体
CN107750282B (zh) Pecvd舟
US20170323815A1 (en) Substrate holding device, substrate transport device, processing arrangement and method for processing a substrate
US6933009B2 (en) Thin-film deposition method
CN105899325A (zh) 借助于激光处理和温度诱导的应力的组合的晶片制造法
CN1841652A (zh) 负载锁定装置、处理系统及处理方法
US9562289B2 (en) Carbon electrode with slidable contact surfaces and apparatus for manufacturing polycrystalline silicon rod
CN1288276C (zh) 蒸发装置
CN101298665B (zh) 用于平面显示器的化学气相沉积装置
US20040069230A1 (en) Thin film formation apparatus and thin film formation method employing the apparatus
US10309012B2 (en) Wafer carrier for reducing contamination from carbon particles and outgassing
KR101112974B1 (ko) 대면적 기판 처리 장치
CN112831835A (zh) 一种金刚石生长的基片台结构及其使用方法
CN101336467B (zh) 等离子体加工装置和等离子体加工方法
KR101680950B1 (ko) 코팅된 기판을 처리하기 위한 처리 박스, 장치 및 방법
KR20080107113A (ko) 평면디스플레이용 화학 기상 증착장치
CN101924057B (zh) 载板及连续等离子体镀膜装置
CN218203036U (zh) 一种太阳能电池片真空镀膜载板
CN214458313U (zh) 一种大型立式真空镀膜装备用的载板
JP5761099B2 (ja) 多結晶シリコン反応炉
KR20100113774A (ko) 기판처리장치
KR100891614B1 (ko) 평면디스플레이용 화학기상 증착장치
JP2012004495A (ja) 電力導入端子およびそれを備えたプラズマ処理装置
KR100489189B1 (ko) 서셉터 구조물
JP6024417B2 (ja) サンプルホルダ

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20130102