WO2010085949A2 - Substratträger zur halterung von substraten - Google Patents

Substratträger zur halterung von substraten Download PDF

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Publication number
WO2010085949A2
WO2010085949A2 PCT/DE2010/000138 DE2010000138W WO2010085949A2 WO 2010085949 A2 WO2010085949 A2 WO 2010085949A2 DE 2010000138 W DE2010000138 W DE 2010000138W WO 2010085949 A2 WO2010085949 A2 WO 2010085949A2
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
support frame
substrate holder
substrate carrier
cfc
Prior art date
Application number
PCT/DE2010/000138
Other languages
German (de)
English (en)
French (fr)
Other versions
WO2010085949A3 (de
Inventor
Mario Prüstel
Stefan Schubert
Hermann Schlemm
Matthias Uhlig
André LUX
Daniel Decker
Silvia Krautwald
Original Assignee
Roth & Rau Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Roth & Rau Ag filed Critical Roth & Rau Ag
Priority to CN201080006252.5A priority Critical patent/CN102859678A/zh
Publication of WO2010085949A2 publication Critical patent/WO2010085949A2/de
Publication of WO2010085949A3 publication Critical patent/WO2010085949A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67333—Trays for chips
    • H01L21/67336—Trays for chips characterized by a material, a roughness, a coating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6734—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders specially adapted for supporting large square shaped substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting substrates others than wafers, e.g. chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67363—Closed carriers specially adapted for containing substrates other than wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67383—Closed carriers characterised by substrate supports

Definitions

  • Substrate carrier for holding substrates
  • the invention relates to a substrate carrier for holding a substrate or a plurality of substrates, in particular solar cell wafers, during transport and during the course of individual process steps in process chambers with coating and / or etching processes.
  • the respective process in addition to the surfaces of a substrate on which the respective process is intended to act in a concrete manner in a technologically intended manner, generally acts on all surfaces within the process chamber.
  • it is attempted to arrange the substrate and device arrangement within the process chamber such that the respective process acts at least predominantly on the concrete substrate surfaces.
  • a simple means, which is widely used in practice, is the covering of the device components which are not to be coated, eg with aluminum foil. But this is always only a relatively coarse cover, which does not cover the areas in the immediate vicinity of the substrates on the substrate holders.
  • substrate holders are constantly exposed to the often aggressive process parameters, which can lead to rapid wear or unusability.
  • Relatively high temperatures lead to stresses and deformations of the substrate holder and reactive processes lead to undesired changes on the surface of the substrate holders.
  • Due to heat dissipation, the relatively high thermal masses of the substrate holders also often lead to unfavorable temperature profiles of the individual solar cell wafers, which are arranged as substrates on the substrate carrier, which can lead to quality losses.
  • No. 6,227,372 B1 specifies a component carrier for accommodating electrical components, which consists of a support frame with a frame structure in such a way that openings are formed in which inserts for receiving the components can be inserted.
  • the inserts are made of semicrystalline polymer, which is not suitable for high temperature processes.
  • US 2006/0006095 A1 describes a universally usable substrate holder for the storage, treatment and transport of a large number of electronic components.
  • the substrate holder has an adjustable side wall opposite a fixed side wall.
  • the adjustable sidewall defines a predetermined opening of the substrate holder.
  • the substrate carrier consists of a support frame and at least one substrate holder.
  • the support frame consists of a self-supporting and rigid frame structure with angularly arranged to each other longitudinal and transverse webs of a stable up to 800 0 C dimensionally stable material.
  • the substrate receptacle rests on the support frame and is designed in the manner of a plate in such a way that the substrates can be positioned on the upper side of the substrate receptacle. Between the support frame and the substrate holder there are thermal insulation elements.
  • the concrete structure of the longitudinal and transverse webs and other structurally provided elements, eg Outer bars, can vary in a wide range. Decisive is the achievement of sufficient stability and flexural rigidity even at higher process temperatures.
  • the support frame should preferably have a low thermal mass.
  • the individual elements of the support frame, the longitudinal and transverse webs and the other constructively provided elements can be arranged in an advantageous manner by means of pins and associated recesses positioned to each other. To secure the geometric arrangement screwed or technically similar locking the frame structure are also advantageous.
  • the inventively designed as a thin plate substrate receptacle rests on the support frame, i. It is formed so thin to foil-like that it bends between the support points only in a process-technologically permissible range.
  • the substrate or the plurality of substrates can be positioned. This can be done in such a way that in the substrate receiving suitable recesses for receiving the e.g. between 0.1 to 0.6 mm thick solar cell wafer are introduced. Suitable positioning aids or stops such as pins or strips for positioning the substrates or solar cell wafers can also be provided on the substrate holder.
  • thermal insulating elements between the support frame and the substrate receiving known pin-like ceramic elements may be introduced in the support frame, for example, ensure that between the support frame and the Substratauf- would take place as good as possible thermal decoupling.
  • the solution according to the invention enables secure and stable mounting of the substrates during transport and during the course of the individual process steps. Especially in thermal processes, short process times can be guaranteed.
  • the solar cell wafers can be heated very quickly to the required process temperatures and the temperature profile of the individual solar cell wafer is very homogeneous, since the thin plate and the support frame with their correspondingly low thermal masses have no or only a very small thermal influence.
  • the thin plate as a substrate receptacle so large that the support frame opposite the heating sources is not exposed to any direct heat radiation.
  • separate additional covers can be provided next to the substrate receptacle and above and / or below the support frame.
  • CFC carbon fiber rein- forced carbon
  • composite materials produced therefrom can be used as the process-stable material for the elements of the support frame and the substrate holder.
  • the material should be resistant and easy to clean to the specific coating and etching processes used, as well as the process temperatures.
  • the substrate carriers are generally formed such that the substrates are subjected to a treatment process only from above. If necessary, also the bottom of the substrate or solar cell wafer one
  • the thin plate have at least one opening in the region of the substrate relative to the underlying support frame. Through the support frame and the opening through the bottom of the substrate can then be at least partially treated.
  • the substrate holder can advantageously be adapted to the specific substrates, while the substrate carrier can be used unchanged for all substrate holders. Due to the specific plate-like and thus thin design of the substrate holder, this adapts very quickly to the given thermal conditions, while the mass-intensive support frame thermally decoupled from the substrate holder is protected under the substrate holder and reacts relatively slowly to temperature changes. On this basis, the thermal influence of the substrates by the support frame and the substrate holder is negligible.
  • the substrate carrier according to the invention can be used concretely both for batch systems and continuous-flow systems for the treatment and / or coating of solar cell wafers as well as for all other flat or suitable flat substrates. Particularly advantageous is the use in the application of relatively high process temperatures and / or reactive atmospheres.
  • FIG. 1 shows a perspective view of a substrate carrier for the enclosure of 25 solar cell wafers.
  • FIG. 2 shows the trachea without substrate receiving.
  • the substrate carrier according to the embodiment is shown in Figure 1 in a perspective view from above.
  • the substrate carrier essentially consists of a lower support frame 1 and a substrate holder 2 resting thereon.
  • 5 ⁇ 5 recesses in the form of openings 3 with lateral supports 4 for holding rectangular 156 ⁇ 156 mm solar cell wafers 5 are included in the substrate receptacle 2 a size of 158 x 158 mm incorporated.
  • a solar cell wafer 5 is inserted only in the lower opening 3.
  • the plate-shaped substrate holder 2 has a thickness of 1.2 mm and the supports 4 are lowered relative to the top of the substrate holder 2 by 0.5 mm, so that the solar cell wafer 5 with a thickness of 0.5 mm is securely positioned in the opening 2 ,
  • the substrate holder 2 covers the support frame 1 in its entirety so that it is shielded from above arranged heating sources. If necessary, the lateral areas of the support frame 1 can still be protected with additional covers from heat radiation.
  • the support frame 1 is shown without substrate receptacle 2, so that the self-supporting and rigid frame structure with angle to each other arranged longitudinal tegen 6 and transverse webs 7 is visible.
  • the support frame 1 to achieve a self-supporting rigid and also low-mass construction further constructive elements. These include in the longitudinal direction as guide rails formed outer webs 8. All elements of the support frame 1 are positioned in a known manner by means not shown sockets, in particular by means of pins and associated recesses to each other and connected. Essential to the invention are evenly distributed over the entire surface of the support frame 1 'thermal insulation provided 9, on which the plate-shaped substrate holder 2 rests. For positioning the substrate Aufnähme 2 on the support frame 1 positioning pins 10 are provided on the support frame 1, which engage in associated holes 11 in the substrate holder 2.
  • the concrete design can be easily adapted to specific and local conditions.
  • the elements of the support frame 1 are made of a CFC composite material and the substrate holder 2 is made of a carbon composite material, which is dimensionally stable at least up to 800 0 C.
  • the thermal insulation elements 9 are made of graphite pins.
  • the carbon composite is made from 100% fiber-reinforced carbon (CFC). Carbon or graphite fibers of only a few microns in diameter are admixed to a matrix of pure carbon. This material has a high mechanical stability, as the matrix out
  • the openings 3 in the substrate receptacle 2 are open by way of example downwards, thereby it is also possible the lower side of the solar cell wafer 5, taking off the surfaces with which the solar cell wafer 5 rest on the lateral supports 4, from below through the support frame 1 therethrough Exposure to coating and etching processes. Insofar as this is not necessary, the openings 3 in the substrate receptacle 2 can also be closed downwards, ie the supports 4 are replaced by a lowered surface.
PCT/DE2010/000138 2009-01-31 2010-01-31 Substratträger zur halterung von substraten WO2010085949A2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201080006252.5A CN102859678A (zh) 2009-01-31 2010-01-31 用于保持基板的基板载体

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009006779 2009-01-31
DE102009006779.5 2009-01-31

Publications (2)

Publication Number Publication Date
WO2010085949A2 true WO2010085949A2 (de) 2010-08-05
WO2010085949A3 WO2010085949A3 (de) 2013-03-21

Family

ID=40719730

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2010/000138 WO2010085949A2 (de) 2009-01-31 2010-01-31 Substratträger zur halterung von substraten

Country Status (4)

Country Link
CN (1) CN102859678A (zh)
DE (1) DE202009001817U1 (zh)
TW (1) TW201036101A (zh)
WO (1) WO2010085949A2 (zh)

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JP2012080028A (ja) * 2010-10-06 2012-04-19 Miki Polymer Co Ltd 面実装電子部品の搬送用トレー
DE102013217441A1 (de) * 2013-09-02 2015-03-05 Singulus Technologies Ag Substratträger
US9214576B2 (en) 2010-06-09 2015-12-15 Solarcity Corporation Transparent conducting oxide for photovoltaic devices
US9228256B2 (en) 2009-12-11 2016-01-05 Kgt Graphit Technologie Gmbh Substrate support
US9281436B2 (en) 2012-12-28 2016-03-08 Solarcity Corporation Radio-frequency sputtering system with rotary target for fabricating solar cells
US9461189B2 (en) 2012-10-04 2016-10-04 Solarcity Corporation Photovoltaic devices with electroplated metal grids
US9496427B2 (en) 2013-01-11 2016-11-15 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US9624595B2 (en) 2013-05-24 2017-04-18 Solarcity Corporation Electroplating apparatus with improved throughput
US9761744B2 (en) 2015-10-22 2017-09-12 Tesla, Inc. System and method for manufacturing photovoltaic structures with a metal seed layer
US9800053B2 (en) 2010-10-08 2017-10-24 Tesla, Inc. Solar panels with integrated cell-level MPPT devices
US9842956B2 (en) 2015-12-21 2017-12-12 Tesla, Inc. System and method for mass-production of high-efficiency photovoltaic structures
US9865754B2 (en) 2012-10-10 2018-01-09 Tesla, Inc. Hole collectors for silicon photovoltaic cells
US9887306B2 (en) 2011-06-02 2018-02-06 Tesla, Inc. Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
US9899546B2 (en) 2014-12-05 2018-02-20 Tesla, Inc. Photovoltaic cells with electrodes adapted to house conductive paste
US10074755B2 (en) 2013-01-11 2018-09-11 Tesla, Inc. High efficiency solar panel
US10309012B2 (en) 2014-07-03 2019-06-04 Tesla, Inc. Wafer carrier for reducing contamination from carbon particles and outgassing
US10770324B2 (en) 2014-11-26 2020-09-08 VON ARDENNE Asset GmbH & Co. KG Substrate holding device, substrate transport device, processing arrangement and method for processing a substrate
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DE102011017566A1 (de) 2010-04-22 2011-12-01 Von Ardenne Anlagentechnik Gmbh Substratbehandlungsanlage und Substrathalter dafür
DE102010052689A1 (de) * 2010-11-26 2012-05-31 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Substrathalter für die Oberflächenbehandlung von Substraten und Verwendung des Substrathalters
DE102011006833A1 (de) 2011-04-06 2012-10-11 Roth & Rau Ag Substratträger
DE102015110854A1 (de) * 2015-07-06 2017-01-12 Von Ardenne Gmbh Verfahren, Substrathaltevorrichtung und Prozessieranordnung
CN104726839B (zh) 2015-03-27 2017-06-16 京东方科技集团股份有限公司 基板固定装置
WO2016162071A1 (en) * 2015-04-09 2016-10-13 Applied Materials, Inc. Carrier system for substrates to be processed
CN108138314A (zh) * 2015-09-21 2018-06-08 应用材料公司 基板载体、以及溅射沉积设备和其使用方法
DE102016111234B4 (de) * 2016-06-20 2018-01-25 Heraeus Noblelight Gmbh Vorrichtung für die thermische Behandlung eines Substrats sowie Trägerhorde und Substrat-Trägerelement dafür
DE102018101439B4 (de) * 2018-01-23 2020-01-09 RF360 Europe GmbH Substratträger für einen Reflow-Ofen und Verwendung eines Substratträgers
CN112368412A (zh) * 2018-06-25 2021-02-12 应用材料公司 用于基板的载体及用于承载基板的方法
CN110190018A (zh) * 2019-07-01 2019-08-30 深圳市石金科技股份有限公司 一种拼接式的硅片承载框
CN111739971B (zh) * 2020-08-03 2021-02-19 苏州迈正科技有限公司 镀膜设备、方法、系统及太阳能电池、组件、发电系统
CN113328010A (zh) * 2021-05-28 2021-08-31 安徽华晟新能源科技有限公司 一种太阳能电池的制备方法
DE102021003330B3 (de) 2021-06-28 2022-09-01 Singulus Technologies Aktiengesellschaft Substratträger
CN114774888B (zh) * 2021-09-30 2024-02-23 苏州迈为科技股份有限公司 Pecvd镀膜载板及镀膜设备

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