CN111218672A - Mocvd加热器 - Google Patents

Mocvd加热器 Download PDF

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Publication number
CN111218672A
CN111218672A CN202010122490.8A CN202010122490A CN111218672A CN 111218672 A CN111218672 A CN 111218672A CN 202010122490 A CN202010122490 A CN 202010122490A CN 111218672 A CN111218672 A CN 111218672A
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substrate
substrate support
plate
mocvd heater
supporting plate
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沈玉军
周国山
张爱兵
蔡渊
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Suzhou New Material Institute Co ltd
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Suzhou New Material Institute Co ltd
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40Oxides
    • C23C16/408Oxides of copper or solid solutions thereof
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

Abstract

本申请公开了一种MOCVD加热器,包括:衬底托板,所述衬底托板具有用于承托超导衬底的衬底承托面;加热片,所述加热片与所述衬底托板导热连接,以加热所述衬底托板,进而使所述衬底承托面上承托的所述超导衬底升温;所述衬底承托面为碳化硅材质。本申请这种MOCVD加热器的衬底托板具有轻量化、高耐磨、耐腐蚀、不变形等优点,可实现连续生产稳定、低加热成本、低劳动强度、低成本维护、降温时间短等效果。

Description

MOCVD加热器
技术领域
本申请涉及一种MOCVD加热器。
背景技术
在制作超导的MOCVD工艺过程中,超导膜YBCO生长需要达到其生长成晶格的高温,而采用具有加热功能的衬底托板结构。实际应用时,超导衬底贴靠承托于前述衬底托板的表面(衬底承托面),金属有机源气体在高温的超导衬底上生长出高质量的超导薄膜。
然而,以往采用的衬底托板采用的合金金属材料,会发现高温金属材料表面因超导膜的特殊性,具有较强的高温腐蚀,从而出现金属生长反应腐蚀,出现反应界面,下次清理后衬底托板(尤其是衬底托板的衬底承托面)会越来越薄;同时较长时间使用后,即使高温金属衬底也会出现变形现象,需要定时打磨甚至报废处理,因为衬底托板变形,会导致衬底托板表面温度不均匀,从而导致超导膜生长晶格排列异常,从而影响超导带材临界电流变差;另外因采用高温耐热金属单件衬底托板重量基本在45-65kg不等,对衬底搬运、移动很不方便,一般陶瓷材料热震性能不能符合连续生产需求,在高温的条件冷热循环一两次就会出现开裂现象,同时机械强度不行,稍有不慎就会损坏,同时导热性能也明显比金属差。
发明内容
本申请目的是:针对上述问题,提出一种新型的MOCVD加热器,其衬底托板具有轻量化、高耐磨、耐腐蚀、不变形等优点,可实现连续生产稳定、低加热成本、低劳动强度、低成本维护、降温时间短等效果。
本申请的技术方案是:
一种MOCVD加热器,包括:
衬底托板,所述衬底托板具有用于承托超导衬底的衬底承托面;以及
加热片,所述加热片与所述衬底托板导热连接,以加热所述衬底托板,进而使所述衬底承托面上承托的所述超导衬底升温;
所述衬底承托面为碳化硅材质。
本申请在上述技术方案的基础上,还包括以下优选方案:
所述衬底承托面设有碳化硅涂层。
所述衬底托板整体为碳化硅材质。
所述衬底承托面为所述衬底托板的上表面。
所述衬底承托面为中部高两端低的圆弧面。
所述加热片设有至少两块,并且各块加热片均贴靠布置于所述衬底托板的下表面。
所述衬底托板的下表面为平面。
所述加热片为电加热片。
所述衬底托板内制有热电偶孔,所述热电偶孔内插装检测所述衬底承托面温度的热电偶。
所述热电偶孔设置至少两个,并且每个热电偶孔均相互间隔地靠近所述衬底承托面布置。
本申请的优点是:
本申请这种MOCVD加热器的衬底承托板尤其是衬底承托的衬底承托面采用耐高温、耐磨、耐腐蚀、导热好的碳化硅(SiC)材质,实现轻量化、高耐磨、耐腐蚀、不变形,实现连续生产稳定、低加热成本、低劳动强度、低成本维护、降温时间短的特点。
附图说明
本申请的上述和/或附加的方面和优点从结合下面附图对实施例的描述中将变得明显和容易理解,其中:
图1为本申请实施例中MOCVD加热器的结构示意图;
其中:a-超导衬底,1-衬底托板,2-加热片,101-衬底承托面,102-热电偶孔。
具体实施方式
为了能够更清楚地理解本申请的上述目的、特征和优点,下面结合附图和具体实施方式对本申请进行进一步的详细描述。应理解,这些实施例是用于说明本申请而不限于限制本申请的范围。实施例中采用的实施条件可以根据具体厂家的条件做进一步调整,未注明的实施条件通常为常规实验中的条件。在下面的描述中阐述了很多具体细节以便于充分理解本申请,但是,本申请还可以采用其他不同于在此描述的其他方式来实施,因此,本申请的保护范围并不受下面公开的具体实施例的限制。
在本说明书的描述中,术语“连接”、“安装”、“固定”等均应做广义理解。例如,“连接”可以使固定连接,也可以是可拆卸连接,或一体地连接;可以使直接相连,也可以是通过中介媒介间接相连。对于本领域的普通技术人员而言,可以根据具体情况理解上述术语在本申请中的具体含义。
在本说明书的描述中,术语“上”、“下”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本申请和简化描述,而不是指示或暗示所指的装置或单元必须具有特定的方向、以特定的方位构造和操作,因此,不能理解为对本申请的限制。
图1示出了本申请这种MOCVD加热器的一个具体实施例,与传统MOCVD加热器相同的是,该MOCVD加热器也包括衬底托板1和加热片2。其中衬底托板1的上表面是用于承托超导衬底a的衬底承托面101,加热片2设置多块(图中示出了8块),每块加热片2贴靠布置在衬底托板1的下表面——二者导热连接,以在实际应用过程中对衬底托板1加热,进而使衬底承托面101上承托的超导衬底a升温,使得沉积至高温超导衬底a上的金属有机源气体快速生长,形成超导薄膜。
本实施例的关键改进在于,上述衬底托板1的衬底承托面101为碳化硅材质。
碳化硅材质的衬底承托面101至少有以下两种实现方式:
第一种,在衬底托板1的上表面设置碳化硅涂层。
第二种,整块衬底托板1全部采用碳化硅制作。
本实施例具体采用了上述第二种方式——衬底托板1整体为碳化硅材质。
本实施例将衬底承托面101设置为中部高两端低的圆弧面,以便衬底托板1上行走的超导衬底a能够与底承托面101时刻贴紧。
衬底托板1的下表面为平面,上述各块加热片2均匀布置在衬底托板1的下表面。加热片2为电加热片。
为了能够实时监测衬底承托面101的温度,进而对其上超导衬底a的温度值进行精准控制,本实施例在衬底托板1内制有多个热电偶孔102,每个热电偶孔102内插装检测衬底承托面101温度的热电偶。而且,前述每个热电偶孔102均相互间隔地靠近衬底承托面101布置。
当然,上述实施例只为说明本申请的技术构思及特点,其目的在于让人们能够了解本申请的内容并据以实施,并不能以此限制本申请的保护范围。凡根据本申请主要技术方案的精神实质所做的等效变换或修饰,都应涵盖在本申请的保护范围之内。

Claims (10)

1.一种MOCVD加热器,包括:
衬底托板(1),所述衬底托板(1)具有用于承托超导衬底(a)的衬底承托面(101);以及
加热片(2),所述加热片(2)与所述衬底托板(1)导热连接,以加热所述衬底托板(1),进而使所述衬底承托面(101)上承托的所述超导衬底(a)升温;
其特征在于,所述衬底承托面(101)为碳化硅材质。
2.根据权利要求1所述的MOCVD加热器,其特征在于,所述衬底承托面(101)设有碳化硅涂层。
3.根据权利要求1所述的MOCVD加热器,其特征在于,所述衬底托板(1)整体为碳化硅材质。
4.根据权利要求1所述的MOCVD加热器,其特征在于,所述衬底承托面(101)为所述衬底托板(1)的上表面。
5.根据权利要求3所述的MOCVD加热器,其特征在于,所述衬底承托面(101)为中部高两端低的圆弧面。
6.根据权利要求1所述的MOCVD加热器,其特征在于,所述加热片(2)设有至少两块,并且各块加热片(2)均贴靠布置于所述衬底托板(1)的下表面。
7.根据权利要求6所述的MOCVD加热器,其特征在于,所述衬底托板(1)的下表面为平面。
8.根据权利要求1所述的MOCVD加热器,其特征在于,所述加热片(2)为电加热片。
9.根据权利要求1所述的MOCVD加热器,其特征在于,所述衬底托板(1)内制有热电偶孔(102),所述热电偶孔(102)内插装检测所述衬底承托面(101)温度的热电偶。
10.根据权利要求9所述的MOCVD加热器,其特征在于,所述热电偶孔(102)设置至少两个,并且每个热电偶孔(102)均相互间隔地靠近所述衬底承托面(101)布置。
CN202010122490.8A 2020-02-27 2020-02-27 Mocvd加热器 Pending CN111218672A (zh)

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