TW201012890A - Acrylic dielectric adhesive - Google Patents
Acrylic dielectric adhesive Download PDFInfo
- Publication number
- TW201012890A TW201012890A TW098131027A TW98131027A TW201012890A TW 201012890 A TW201012890 A TW 201012890A TW 098131027 A TW098131027 A TW 098131027A TW 98131027 A TW98131027 A TW 98131027A TW 201012890 A TW201012890 A TW 201012890A
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- Prior art keywords
- insulating adhesive
- parts
- film
- mass
- acrylic
- Prior art date
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
- C09J4/06—Organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond in combination with a macromolecular compound other than an unsaturated polymer of groups C09J159/00 - C09J187/00
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- C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
- C08F222/10—Esters
- C08F222/1006—Esters of polyhydric alcohols or polyhydric phenols
- C08F222/102—Esters of polyhydric alcohols or polyhydric phenols of dialcohols, e.g. ethylene glycol di(meth)acrylate or 1,4-butanediol dimethacrylate
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- C09J171/00—Adhesives based on polyethers obtained by reactions forming an ether link in the main chain; Adhesives based on derivatives of such polymers
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- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
- Y10T29/49146—Assembling to base an electrical component, e.g., capacitor, etc. with encapsulating, e.g., potting, etc.
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Description
201012890 六、發明說明: 【發明所屬之技術領域】 本發明係關於一種用以將ic晶片等電子零件接合至配 線基板之自由基聚合性丙烯酸系絕緣性接著劑、以該接著 劑之自由基聚合硬化物來將電子零件固定於配線基板所得 之連接構造體及其製造方法。 * 【先前技術】 〇 近年來,伴隨IC晶片之高集積化,ic晶片之凸塊間的 空間變得窄節距化’又凸塊面積也出現窄面積化。將IC晶 片接合於配線基板之際,雖廣泛使用異向性導電膜,但由 於導電性粒子之粒徑下限在2"m程度,所以適用於高集積 化之1C晶片與配線基板的接合上會發生困難。此外,當將 矛J用接合機所做成之柱形凸塊(stud bump)做為對應於窄節 距化與窄面積化之凸塊時’由於凸塊形狀會因其前端部傾 倒成為大致圓錐形狀,而有導電性粒子之捕獲性低之缺 © 點。是以’乃逐漸不使用異向性導電膜,而是使用絕緣性 接著劑將1C晶片之凸塊與配線基板之連接墊做直接接合 (NCF接合)。 於前述NCF接合所使用之絕緣性接著劑方面,以往, 為了利用熱硬化反應來產生羥基,乃使用了顯現高凝集 力、且對被接著體可確保高接著強度之熱硬化性環氧系樹 脂接著劑(專利文獻1)〇但是,熱硬化性環氧系樹脂接著劑 雖可確保良好凝集力以及對於被接著體之良好密接強度, 3 201012890 但另一方面聚合反應溫度為l8〇〜 25(rc相對較高,且需要 數小時的熱硬化時間,所以於熱硬化時IC晶片可能會受到 損害,且有接合生產性低的問題。 是以’乃有人嘗試將能於相對低溫與短時間進行自由 基聚合的丙烯酸系絕緣性接著劑利用在NCF接合上(專利文 獻2)。 專利文獻1特開2001-189346號公報 專利文獻2特開2003-82034號公報 【發明内容】 發明所欲解決之課題 但是,使用專利文獻2之丙烯酸系絕緣性接著劑的情 況’其自由基聚合硬化物的玻璃轉化溫度為_3〇〜1〇〇c相對 低’物性改善用之無機填料的含量相對於硬化樹脂成分1 〇〇 重量份為5〜40重量份也相對較少,所以雖然在接合部之 應力緩和方面具有優點’但凝集力與耐熱性不充分,尺寸 女疋性也發生問題’結果無法期待良好的連接可靠性。是 以,專利文獻2,如其實施例所揭示般,將ic晶片接合至 配線基板之際,不得不於接著劑配合環氧樹脂與環氧樹脂 硬化劑,接合時並非以自由基反應而是以陰離子開環聚合 反應來使得接著劑硬化’仍然必須採用14〇。(:、5小時之聚 合硬化條件。如此般,目前尚未實現使得丙烯酸系絕緣性 接著劑以低溫迅速進行自由基聚合硬化,來將1C晶片等電 子零件固定於配線基板,且以高連接可靠性來將1C晶片之 201012890 凸塊與配線基板之連接墊做直接接合。 本發明之目的在於提供一種自由基聚合性丙烯酸系絕 緣性接著劑,其做為將電子零件以NCF接合來接合至配線 基板的絕緣性接著劑,在低溫快速聚合硬化性優異,可實 現良好之連接可靠性。 用以解決課題之手段 i 本發明者發現在由(曱基)丙烯酸酯單體、成膜用樹脂、 無機填料、矽烷偶合劑以及自由基聚合起始劑所構成之丙 Ο 烯酸系絕緣性接著劑中,若無機填料之含量相較於以往以 較大量含有,且玻璃轉化溫度較以往來得非常高,且其玻 璃轉化溫度前後的線膨脹係數分別設定在特定範圍内,則 可達成本案發明之目的,從而完成了本發明。 亦即’本發明係提供一種丙烯酸系絕緣性接著劑,其 含有(甲基)丙烯酸酯單體、成膜用樹腊'無機填料、矽烷偶 合劑以及自由基聚合起始劑,用以將電子零件固定於配線 基板者; 〇 無機填料相對於(甲基)丙烯酸酯單體以及成膜用樹脂 之合計100質量份係含有70〜16〇質量份; 丙稀酸系絕緣性接著劑之自由基聚合硬化物顯示150 〜185°C之玻璃轉化溫度,且在低於玻璃轉化溫度的溫度區 域顯示30〜35Ppm之線膨脹係數(α υ,在玻璃轉化溫度以 上之溫度區域顯示1 〇5〜125ppm之線膨脹係數(α 2),並滿 足下述式(1) a 2/a 3.4 ...(1) 5 201012890 再者,本發明提供該丙烯酸系絕緣性接著劑之自由基 聚合硬化物。 再者’本發明提供一種連接構造體,係電子零件與配 線基板以上述自由基聚合性之丙烯酸系絕緣性接著劑的自 由基聚合硬化物做固定,該電子零件的凸塊直接接合於配 線基板之連接墊者。 再者’本發明係上述連接構造體之製造方法,係對配 線基板供應上述自由基聚合性之丙烯酸系絕緣性接著劑, 並對配線基板之連接墊進行電子零件凸塊之對位,然後將 電子零件加熱加壓以使得丙烯酸系絕緣性接著劑做自由基 聚合硬化而將電子零件固定於配線基板,且將電子零件之 凸塊與配線基板之連接墊加以直接接合。 發明效果 抑本發明之丙烯酸系絕緣性接著劑,係由(甲基)丙稀酸醋 單體、成膜用樹脂、無機填料、矽烷偶合劑以及自由基聚 合起始劑所構成,且無機填料之含量較以往來得多,再y 其玻璃轉化溫度較以往來得非常地高,且其玻璃轉化溫产 前後之線膨脹係數分別設定於特定範圍所以能以 = 200。。之相對低溫、5〜10秒之加熱時間進行自由人〜 化。再者,應力緩和性也優異’戶斤以可實現良好:連:; 靠性。 心運接可 【實施方式】 本發明之自由基聚合性之丙烯酸系 絕緣性接著劑 係 201012890 用以將電子零件固定於配線基板上之接著劑,其特徵在於 含有(甲基)丙烯酸酯單體、成膜用樹脂、無機填料、矽烷偶 合劑以及自由基聚合起始劑。 本發明之丙烯酸系絕緣性接著劑之構成成分之一的(甲 基)丙烯酸酯單體,主要係對於接著劑的聚合硬化物賦予凝 : 集力,可賦予機械特性。此處,所說之(甲基)丙烯酸酯單體 意指丙烯酸酯單體或是甲基丙烯酸酯單體。 在(曱基)丙稀酸酯單體方面,可使用單官能(甲基)丙稀 0 酸g曰單體、多官能(曱基)丙烯酸酯單體、或是於該等當中導 入環氧基、胺基曱酸酯基、胺基、氧化乙烯基、氧化丙烯 基等而成之變性單官能或多官能(曱基)丙烯酸酯單體。又, 於本發明中,亦可僅使用單官能(甲基)丙烯酸酯單體做為 (甲基)丙烯酸酯單體,但為了使得接著劑之聚合硬化物的玻 璃轉化溫度設定為較高、且提高凝集力,較佳為至少一部 刀更佳為全部皆使用多官能(曱基)丙烯酸酯單體。 在單官能(甲基)丙烯酸酯單體方面,可舉出至少丨分子 © ^具有1個以上(曱基)丙烯醯基之(甲基)丙稀酸s旨樹脂或該 等之變性物等。又,該等變性物可舉出丙稀酸四氣擁醋、 丙烯酸異冰片酯、甲基丙烯酸甲酯、甲基丙烯酸乙酯、三 f六烷一甲醇二丙烯酸酯、三環癸烷二甲醇二曱基丙烯酸 δ曰匕乙氧基化雙酚A二丙烯酸酯、丙氧基化雙酚A二丙烯 酸6日季戊四醇三丙烯酸酯、乙氧基化三聚異氰酸三丙烯 酸醋等。 於本發明之丙烯酸系絕緣性接著劑中,可在不致損及 7 201012890 本發明效果的前提下,併用可和(子基)丙烯酸酯單體做自由 基聚合之其它單體。此種其它單體可舉出(甲基)丙烯酸、乙 酸乙烯酯、苯乙烯、氣乙烯等。 本發明之丙烯酸系絕緣性接著劑係含有成膜用樹脂。 成膜用樹脂乃玻璃轉化溫度為5(rc以上之在常溫下固體之 樹脂,為與(甲基)丙烯酸酯單體互溶之樹脂,用以使得丙烯 酸系絕緣性接著劑之自由基聚合硬化物的玻璃轉化溫度上 升。做為此種成膜用樹脂,可舉出苯氧樹脂 '聚乙烯縮醛 樹知丙烯酸樹月曰、本乙烯樹脂、胺s旨樹脂、聚對苯二甲 酸乙二醇酯樹脂等。當中,又以分子量10000〜1〇〇〇〇〇、分 子中具有芴骨架之苯氧樹脂為佳。此種具有芴骨架之成膜 用樹脂之具體例可舉出FX293(東都化成公司製造)等。、 於本發明中,成膜用樹脂之使用量若過少則丙烯酸系 絕緣性接著劑之成膜性會不充分,若過多則相對地(甲基) 丙烯酸醋單體的使用量會過度減少而損及凝集力,所以^目 對於(甲基)丙烯酸酯單體100質量份較佳為5〇〜1〇〇質量 份。 本發明之丙烯酸系絕緣性接著劑為了調整熔融黏度、 改善難燃性、改善尺寸安定性等而含有無機填料。此種無 機填料可使用氫氧化鋁、氫氧化鎂、碳酸鈣、碳酸鎂、矽 酸鈣、矽酸鎂、氧化鈣、氧化鎂、氧化鋁粉末、結晶性氧 化石夕、非結晶性氧化石夕、氮化铭、氣化蝴粉末、棚酸銘晶 鬚等。當巾’可較佳使用非結晶性氧切。該等亦可為球 狀等定形或不定形者。 201012890 無機填料之粒徑若過小則會引發黏結劑之增黏而無法 進行良好的塗佈,若過大則會成為填料攻擊(mier 的原因’是以較佳為0.005〜15"m、更佳為OH心。 於本發明中’若無機填料之使用量過少無法得到良好 之導通可靠性,若過多會引發黏結劑之增黏而無法進行良 好的塗佈’所以相對於(甲基)丙稀酸s旨單體與成膜用樹脂: 合計100質量份,較佳A 70〜16() f量份、或是相對於所 使用之樹脂100質量份為50〜150質量份。 ❺ 本發明之丙烯酸系絕緣性接著劑為了改善接著劑之聚 合硬化物與1C晶片或配線基板或無機填料之密合性,係含 有石夕烧偶合劑。切烧偶合劑方面可舉出r_縮水甘油基丙 基三甲氧基㈣、卜婆基丙基三甲氧基㈣、卜胺基丙基 三乙氧基矽烷、卜胺曱醯胺丙基三乙氧基矽烷、N{胺基 乙基个胺基丙基三甲氧基钱、7_甲基丙烯氧基丙基三 甲氧基㈣等。當中又以使用卜曱基丙稀氧基丙基三甲氧 基碎院為佳。 〇 於本發明中,矽烷偶合劑之使用量若過少則接著力變 得不充分,若過多則會成為加熱硬化時之氣泡產生原因, 所以相對於(甲基)丙烯酸醋單體與成膜用樹脂之合計ι〇〇 質量份較佳為0· 1〜5質量份。 本發明之丙稀㈣絕緣性接著劑係含有(甲基)丙稀酸 醋單體、用以進行自由基聚合之自由基聚合起始劑。在自 由基聚合起始劑方面可舉出過氧化苯酿、二枯基過氧化 物、二丁基過氧化物等有機過氧化物、偶氣雙異丁猜、偶 9 201012890 氮雙戊腈等偶氮系化合物等。當中又以使用過氧化笨醯為 佳。 於本發明中’自由基聚合起始劑之使用量若過少則無 法短時間硬化,若過多則硬化物會變硬造成密合性降低, 疋以相對於(曱基)丙烯酸酯單體以及成膜用樹脂之合計100 質量份較佳為1〜10質量份。 本發明之丙烯酸系絕緣性接著劑除了以上所說明之成 刀以外,為了提高連接可靠性以含有應力緩和劑為佳。在 應力緩和劑方面可使用與成膜樹脂、(甲基)丙烯酸單體之聚 合硬化物相溶之橡膠或熱塑性彈性體。此種橡膠、熱塑性 彈性體可舉出丙烯酸橡膠、丁腈橡膠(NBR)、丁二烯橡膠(PB) 等’亦可併用兩種類以上。 於本發明中使用應力緩和劑之情況,其使用量若過少 則無法得到充分之應力緩和效果,若過多則成為非相溶狀 態,是以相對於(甲基)丙烯酸酯單體以及成膜用樹脂之合計 1〇〇質量份較佳為1〜1〇質量份。 本發明之丙烯酸系絕緣性接著劑除了以上成分尚可視 情況含有甲苯、甲乙酮、乙酸乙酯等之溶劑、著色劑、抗 氧化劑、抗老化劑等。 本發明之丙烯酸系絕緣性接著劑其自由基聚合硬化物 顯示150〜185t:、較佳為155〜175七之玻璃轉化溫度。若 玻璃轉化溫度未滿150。(:,會損及加熱時之連接可靠性。此 處,自由基聚合硬化條件可從較低溫之13(rc左右起,但就 獲得實用性聚合速度之觀點,可舉出16〇〜2〇〇t:2加熱溫 201012890 度。此時之加熱時間為5〜1 〇秒。 本發明之丙烯酸系絕緣性接著劑之自由基聚合硬化物 在低於玻璃轉化溫度的溫度區域(亦即適用自由基聚合硬化 物之連接構造體的使用溫度)、具體而言在〇〜50°C顯示30 〜3 5ppm之線膨脹係數(α 1);在玻璃轉化溫度以上之溫度 區域(亦即焊料熔焊處理溫度)、具體而言在185〜2〇(rc顯 不105〜125ppm之線膨脹係數(α 2)。若線膨脹係數(α υ 超過35ppm,會損及連接可靠性故不佳。又,若線膨脹係數 Ο (α 2)超過125ppm ’會損及連接可靠性故不佳。 又’本發明之丙烯酸系絕緣性接著劑必須進一步滿足 下述式(1) α 2/α 1 ^ 3.4 ...(1) 此乃由於’若α 2/ α 1未滿3.4會損及連接可靠性之故。 具有前述特性之本發明之丙烯酸系絕緣性接著劑之自 由基聚合硬化物亦為本發明之一部分。 本發明之丙烯酸系絕緣性接著劑在將1C晶片對配線基 板進行NCF接合之際適合使用。具體而言,可適用於一種 連接構造體,該連接構造體之電子零件與配線基板係以本 發明之丙烯酸系絕緣性接著劑的自由基聚合硬化物做固 疋、該電子零件之凸塊係直接接合於配線基板之連接墊。 此種連接構造體亦為本發明之一態樣。 在電子零件方面’可舉出具備凸塊之1C晶片、具備凸 塊之發光二極體晶片等。在凸塊方面並無特別限定,可較 11 201012890 佳使用有助於窄節距、窄面積化之柱形凸塊。此種柱形凸 塊之較佳高度為30〜1〇〇”。又,在配線基板方面可舉出 具備銅或鋁等連接墊之玻璃環氧配線基板、玻璃基板、可 撓性配線基板等。 此種連接構造體之製造方式,係將本發明之丙烯酸系 絕緣性接著劑以分配器(dispenser)等公知之供應手段來供 應於配線基板,對配線基板之連接墊,將電子零件之凸塊 以公知之手法做對位,對電子零件進行加熱加壓來使得丙 烯酸系絕緣性接著劑產生自由基聚合硬化而將電子零件固 ⑩ 定於配線基板,且使得電子零件之凸塊與配線基板之連接 墊做直接接合。此處,較佳之加熱加壓條件可舉出i 6〇〜2〇〇 C之加熱溫度、5〜10秒之加熱時間、1〇〜1〇〇g/凸塊之壓 力。 (實施例) 以下以實施例來具體說明本發明。 實施例1〜4、比較例1〜6 (1) 丙烯酸系絕緣性接著劑之調製 φ 將表1所示之配合成分以混合機做均句混合來調製丙 烯酸系絕緣性接著劑。其中,在比較例5係調製環氧系絕 緣性接著劑。此外,在比較例6係調製丙烯酸系異向性導 電接著劑。 (2) 玻璃轉化溫度之測定 以190°C-30分鐘之熱壓來製作完全硬化樣品,製作出 長20mm、寬2mm、高〇.〇5mm之測試件。所得到之測士式件 12 201012890 係依照JISK7244來測定玻璃轉化溫度。所得之結果示於表 (3)線膨脹係數之測定 以19〇。(:一 30分鐘之熱壓來製作完全硬化之樣品,針 對長5mm、直徑l.5mm之圓柱測試件,依照JISK7197來測 定較玻璃轉化溫度為低之〇〜5〇〇c的溫度區域下之線膨脹 係數(α 1)、以及較玻璃轉化溫度為高之i85〜2〇〇<t之溫度 區域下之線膨脹係數(〇: 2) »所得之結果示於表1。 〇 (4)連接構造體之製作 對形成有連接銅墊之0.5 mm厚之評價用玻璃環氧基板 之連接塾面貼合接著劑。另一方面,於形成有可靠性用 TEG(Test Element Group)之〇.4mm厚之評價用ic晶片表面 以接合機來形成高度70/zm之柱狀金凸塊。使得此評價用 1C晶片之柱形凸塊面與評價用玻璃環氧基板之連接面相對 向,將凸塊與連接墊進行對位之後,以5〇;^m厚之全氟乙 稀片來挾持並以下述熱壓接條件A或B來進行熱壓接。 ❹ 熱麼接條件A. 190C、5秒、12·8kgf/tip(80gf/凸塊) 熱壓接條件 B : 19〇t、10 秒 ' I2.8kgf/tip(80gf/凸塊) <評價1 (連接可靠性評價)> 以4端子法測定了連接構造體之初期、吸濕熔焊處理 後(於85 C、85%RH環境下放置24小時,接著使其通過最 尚溫度260 C之熔烊爐3次後)、以及pct試驗後(於121 °C 之飽和水蒸氣環境中放置96小時後)之連接電阻值。 所得之結果示於表1。 13 201012890 <評價2(吸濕剝離試驗評價)> 於連接構造體之初期、吸濕熔焊處理後(於85 〇c、 85%RH環境下放置24小時,接著使其通過最高溫度26〇(^ 之熔焊爐3次後)、以及PCT試驗後(於1 2 之飽和水蒸氣 環境中放置96小時後),以超音波映像裝置(SAT)觀察評價 用1C晶片是否發生剝離’未觀察到剝離者評價為[A]、觀察 到剝離者評價為[B]。所得之結果示於表1。 <綜合評價> 又’綜合上述評價1與評價2兩者結果,針對吸濕炫 焊後與PCT試驗後分別以下述基準來評價。所得結果示於 表1。 非常良好[Exc]:連接電阻值(評價1)在0.02Ω以下,未 觀察到剝離(評價2)之情況 良好[G]:觀察到一部分剝離(評價2),連接電阻值(評 價1)在0.02 Ω以下,並無實用特性上問題之情況 不良[NG]:不論有無觀察到剝離(評價2),但連接電阻 值(評價1)超過0.02Ω(包含open)之情況 14 201012890
201012890 SO· 02 1 ^0.02 1 open OQ Ql3 ο 1 ^0.02 1 ^0.02 1 Γ〇· 1 ο 1 ^0.02 1 0.06 1 0.12 1 -< OQ 〇 ο Ι^ο. 〇2 1 SO. 02 1 open CQ CQ o ο SO. 02 ! ^0.02 1 open -< CQ CQ e> ο SO. 02 ! ^o. 〇2 I open CQ CO o ο I ^0.02 1 1 ^0.02 open CO OQ o S 1 各 0.02 1 1 ^0.02 | | ^0.02 | -< < GO ο ^0. 02 ^0. 02 1 SO. 02 1 < -< < ο s <Τ5 vii ^0. 02 SO. 02 -< -< -«: ω S <=> VII SO. 02 SO. 02 -< ta ο ω I ^0.02 SO. 02 ^0. 02 -< o ο ΙΛ] 耜您ΐ S i « «= 2 i-1 a 雄 ?t * ^ ^ 1 s樓L ^ 洚 % 鍰 m 咳 Οί 寒 總合評價 吸濕熔焊後 PCT試驗後
tm*<<铖 Η 琳 qf^*< 屮4恕蛱給日7/>τ>φ : εΓ 1^吻釙^嗜^契二#^^喊寺蚩寒¥炔:31* 阳<<槳淚40二蘅^^砩-©冊)龚^^瓚奪坤:11* i<<(SI.2J31BsSUBUUOJJ3p-l3>lsulos)实本案砸画褙二敏^筚^备戚«ifi : 0Γ 阳<<輕H^qf^n-二敏命筚趔^餐' 溜潜费肊:6* 阳<<^靶蟬奪r< 日^.0郐4霄il·* 屮4泠^^聆 β 磡:8* 阳<<&抝釙^茱磾-龄#齧寰《蝴澈♦ : Γ 砣<<輕4噠^餘«(*餿寒^枓剧<态^:9* 阳勿雜H^qH?«4<槳荖碱蚪别$1 : Γ 1§<<鎪率碱一Ϊ4Β -獎率鰱蛘锻趄剧一螽鉍:寸* ^- I®潜竑砵鉍Μ :ε* 阳<<麵 H^^^-fl-案 * 遛盔裝«fs-M^你 ϊίΜ :(Ν* 砣<<釙与镞妹-槳i#遛,®ffi : U 201012890 由表1可知,實施例1〜5之情況,不論是熱壓接條件 A或B,就初期、吸濕熔焊處理後、Pct試驗後而言在連接 可靠性試驗之結果為良好,吸濕剝離試驗之結果並無實用 上之問題。
另一方面,若相對於(甲基)丙烯酸酯單體與成膜用樹脂 之合计100質量份’無機填料之使用量未滿70質量份,則 於吸濕熔焊處理後以及PCT試驗後會產生部分剝離,pcT 試驗後連接電阻值會上升成為〇pen,於實用特性上被評價 為不良。 又,並非使用丙烯酸系絕緣性接著劑而是使用環氧系 絕緣性接著劑之比較例5之情況,由於熱壓接時間不足, 所以在初期、吸濕熔焊後之連接電阻高,尤其是pcT試驗 後之連接電阻值超過〇·5Ω。此外,追加導電性粒子之比較 例6之匱况,由於被認為導電性粒子無法被充分捕捉於柱 形凸塊與電極凸塊之間,從而pCT試驗後之連接電阻值超 過 0·5Ω。 〇 產業上可利用性 本發明之自由基聚合性丙烯酸系絕緣性接著劑,可在 160〜20G°C此種相對低溫之加熱溫度條件下、5〜1()秒此種 加熱時間下進行自由基聚合硬化,且應力緩和性也優異, 故當作將1C晶片等電子零件以腳接合來接合至配線基板 時所使用之接著劑為有用者。 【圖式簡單說明】 17 201012890 (無) 【主要元件符號說明】 (無)
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Claims (1)
- 201012890 七、申請專利範圍: 1. 一種丙烯酸系絕緣性接著劑,含有(甲基)丙烯酸酯單 體、成膜用樹脂、無機填料、矽烷偶合劑以及自由基聚合 起始劑,用以將電子零件固定於配線基板者; 無機填料相對於(曱基)丙烯酸酯單體與成膜用樹脂之 合計100質量份係含有70〜160質量份; 丙烯酸系絕緣性接著劑之自由基聚合硬化物顯示15〇 〜185°C之玻璃轉化溫度,且在低於玻璃轉化溫度的溫度區 域顯示30〜35ppm之線膨脹係數(α 1),在玻璃轉化溫度以 上之溫度區域顯示105〜125ppm之線膨脹係數(α 2),並滿 足下述式(1) α 2/ α 1 ^ 3.4 ...(1) 。 2·如申請專利範圍第1項之丙烯酸系絕緣性接著劑,其 中’相對於(曱基)丙烯酸酯單體100質量份,成膜用樹脂含 有50〜1〇〇質量份;相對於(甲基)丙烯酸酯單體與成膜用樹 〇 脂之合計1 00質量份,矽烷偶合劑含有0.1〜5質量份;相 對於(曱基)丙烯酸酯單體與成膜用樹脂之合計丨00質量 份’自由基聚合起始劑含有1〜1〇質量份。 3 .如申請專利範圍第1或2項之丙烯酸系絕緣性接著 劑’係進一步相對於(曱基)丙烯酸酯單體與成膜用樹脂之合 計1 00質量份含有應力緩和劑1〜丨〇質量份。 4.如申請專利範圍第1或2項之丙烯酸系絕緣性接著 劑’其中,成膜用樹脂係笨氧樹脂。 201012890 5. 如申請專利範圍第3項之丙烯酸系絕緣性接著劑,其 中,成膜用樹脂係笨氧樹脂。 6. 如申請專利範圍第3項之丙烯酸系絕緣性接著劑,其 中’應力缓和劑係含有丙稀酸橡膠、丁腈橡膠(NBR)、丁二 烯橡膠(PB)之1種以上。 7_ —種自由基聚合硬化物,含有(甲基)丙烯酸酯單體、 成膜用樹脂、無機填料、矽烷偶合劑以及自由基聚合起始 劑’用以將電子零件固定於配線基板之丙烯酸系絕緣性接 著劑之自由基聚合硬化物; 無機填料相對於(甲基)丙烯酸酯單體與成膜用樹脂之 合計100質量份係含有70〜160質量份; 顯示150〜185°C之玻璃轉化溫度,且在低於玻璃轉化 溫度的溫度區域顯示30〜35ppm之線膨脹係數(αΐ),在玻 璃轉化溫度以上之溫度區域顯示1〇5〜125ppm之線膨脹係 數(α 2),並滿足下述式(1) a 21 a 1^3.4 ...(1) 。 8. —種連接構造體’係電子零件與配線基板以申請專利 範圍第1〜6項中任一項之丙烯酸系絕緣性接著劑的自由基 聚合硬化物做固定,該電子零件的凸塊直接接合於配線基 板之連接墊者。 9. 如申請專利範園第8項之連接構造體,其中,電子零 件係具備枉形凸塊之1C晶片。 10. —種連接構造艎之製造方法,用以製造申請專利範 201012890 t 圍第8項之連接構造體; 係對配線基板供應申請專利範圍第丨〜6項中任一項之 丙烯酸系絕緣性接著劑,對配線基板之連接墊進行電子零 件凸塊之對位,然後將電子零件加熱加壓以使得丙烯酸系 絕緣性接著劑做自由基聚合硬化而將電子零件固定於配線 基板’且將電子零件之凸塊與配線基板之連接塾加以直接 接合。 ❹ 八、圖式: 益21
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US (1) | US8613623B2 (zh) |
JP (1) | JP5509738B2 (zh) |
TW (1) | TW201012890A (zh) |
WO (1) | WO2010038574A1 (zh) |
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Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60262430A (ja) | 1984-06-08 | 1985-12-25 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JPS6386539A (ja) * | 1986-09-30 | 1988-04-16 | Sony Chem Corp | 半導体素子の接続方法 |
JP2001019912A (ja) * | 1999-07-05 | 2001-01-23 | Sumitomo Bakelite Co Ltd | ダイアタッチペースト及びそれを用いた半導体装置 |
JP3871828B2 (ja) * | 1999-07-05 | 2007-01-24 | 住友ベークライト株式会社 | ダイアタッチペースト及びそれを用いた半導体装置 |
CN101037581A (zh) * | 1999-08-25 | 2007-09-19 | 日立化成工业株式会社 | 粘合剂,配线端子的连接方法和配线结构体 |
JP4445624B2 (ja) | 1999-12-28 | 2010-04-07 | パナソニック株式会社 | Icチップのフィルム状回路基板への接合方法及びicチップ接合体 |
JP2002076589A (ja) | 2000-08-31 | 2002-03-15 | Hitachi Ltd | 電子装置及びその製造方法 |
JP4852785B2 (ja) | 2000-11-29 | 2012-01-11 | 日立化成工業株式会社 | 回路接続用フィルム状接着剤、回路端子の接続構造および回路端子の接続方法 |
JP2002363218A (ja) | 2001-06-07 | 2002-12-18 | Hitachi Chem Co Ltd | 樹脂ペースト組成物及びこれを用いた半導体装置 |
JP2003082034A (ja) | 2001-09-13 | 2003-03-19 | Hitachi Chem Co Ltd | アクリル樹脂、これを用いた接着剤及び接着フィルム |
JP2003253238A (ja) * | 2002-02-28 | 2003-09-10 | Fujitsu Ltd | 接着剤およびこれを用いた電子部品接合方法 |
TWI252066B (en) * | 2002-02-28 | 2006-03-21 | Hitachi Chemical Co Ltd | Method for connecting electrodes, surface-treated wiring board and adhesive film used in the method, and electrodes-connected structure |
JP3858740B2 (ja) * | 2002-03-27 | 2006-12-20 | 日立化成工業株式会社 | 回路接続用接着剤組成物及びそれを用いた回路接続構造体 |
JP4945881B2 (ja) * | 2004-01-23 | 2012-06-06 | 日立化成工業株式会社 | 回路接続用支持体付接着剤、及びそれを用いた回路接続構造体 |
US7578891B2 (en) * | 2004-05-18 | 2009-08-25 | Hitachi Chemical Company, Ltd. | Adhesive bonding sheet, semiconductor device using the same, and method for manufacturing such semiconductor device |
JP4534716B2 (ja) * | 2004-10-26 | 2010-09-01 | 日立化成工業株式会社 | 回路接続材料並びに回路端子の接続構造体及び接続方法 |
EP1860170A4 (en) * | 2005-03-16 | 2010-05-05 | Hitachi Chemical Co Ltd | ADHESIVE COMPOSITION, CONNECTION MATERIAL FOR CIRCUITS, CONNECTION STRUCTURE FOR CIRCUIT COMPONENTS, AND SEMICONDUCTOR DEVICE |
JP4900554B2 (ja) * | 2005-03-30 | 2012-03-21 | ソニーケミカル&インフォメーションデバイス株式会社 | 熱硬化型異方性導電接着剤 |
JP5157229B2 (ja) * | 2006-04-11 | 2013-03-06 | 日立化成株式会社 | 接着シート |
JP5116299B2 (ja) * | 2006-12-20 | 2013-01-09 | 株式会社ブリヂストン | 接着剤組成物 |
JP2008231366A (ja) * | 2007-03-23 | 2008-10-02 | Lintec Corp | 粘接着剤組成物、粘接着シートおよび半導体装置の製造方法 |
JP4788699B2 (ja) | 2007-10-18 | 2011-10-05 | 日立化成工業株式会社 | Icチップ接続用接着フィルム |
-
2009
- 2009-09-02 US US13/060,915 patent/US8613623B2/en not_active Expired - Fee Related
- 2009-09-02 JP JP2009202141A patent/JP5509738B2/ja active Active
- 2009-09-02 WO PCT/JP2009/065289 patent/WO2010038574A1/ja active Application Filing
- 2009-09-15 TW TW098131027A patent/TW201012890A/zh unknown
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WO2010038574A1 (ja) | 2010-04-08 |
US8613623B2 (en) | 2013-12-24 |
US20110159713A1 (en) | 2011-06-30 |
JP2010106244A (ja) | 2010-05-13 |
JP5509738B2 (ja) | 2014-06-04 |
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