TW200937518A - Etching endpoint determination method - Google Patents

Etching endpoint determination method Download PDF

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Publication number
TW200937518A
TW200937518A TW097129525A TW97129525A TW200937518A TW 200937518 A TW200937518 A TW 200937518A TW 097129525 A TW097129525 A TW 097129525A TW 97129525 A TW97129525 A TW 97129525A TW 200937518 A TW200937518 A TW 200937518A
Authority
TW
Taiwan
Prior art keywords
plasma
etching
end point
regression line
processing chamber
Prior art date
Application number
TW097129525A
Other languages
English (en)
Chinese (zh)
Other versions
TWI373806B (enExample
Inventor
Hiroshige Uchida
Daisuke Shiraishi
Shoji Ikuhara
Akira Kagoshima
Original Assignee
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Tech Corp filed Critical Hitachi High Tech Corp
Publication of TW200937518A publication Critical patent/TW200937518A/zh
Application granted granted Critical
Publication of TWI373806B publication Critical patent/TWI373806B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW097129525A 2008-02-27 2008-08-04 Etching endpoint determination method TW200937518A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008046533A JP5192850B2 (ja) 2008-02-27 2008-02-27 エッチング終点判定方法

Publications (2)

Publication Number Publication Date
TW200937518A true TW200937518A (en) 2009-09-01
TWI373806B TWI373806B (enExample) 2012-10-01

Family

ID=40997158

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097129525A TW200937518A (en) 2008-02-27 2008-08-04 Etching endpoint determination method

Country Status (4)

Country Link
US (2) US8083960B2 (enExample)
JP (1) JP5192850B2 (enExample)
KR (1) KR101015517B1 (enExample)
TW (1) TW200937518A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110530825A (zh) * 2018-05-23 2019-12-03 亚智科技股份有限公司 蚀刻时间侦测方法及蚀刻时间侦测系统
CN114063479A (zh) * 2021-11-12 2022-02-18 华科电子股份有限公司 应用于蚀刻机的多路输出模块的射频电源控制方法及系统

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JP5192850B2 (ja) * 2008-02-27 2013-05-08 株式会社日立ハイテクノロジーズ エッチング終点判定方法
KR101117928B1 (ko) 2010-06-07 2012-02-29 명지대학교 산학협력단 플라즈마 공정 진단 시스템 및 이에 있어서 종료점 검출 방법 및 장치
JP5675195B2 (ja) 2010-07-20 2015-02-25 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
CN102812157B (zh) * 2010-11-30 2014-08-20 深圳市华星光电技术有限公司 金属蚀刻方法、金属蚀刻控制方法及其装置
JP5699795B2 (ja) * 2011-05-12 2015-04-15 富士通セミコンダクター株式会社 半導体装置の製造方法及半導体製造装置
JP6002487B2 (ja) * 2012-07-20 2016-10-05 株式会社日立ハイテクノロジーズ 分析方法、分析装置、及びエッチング処理システム
WO2014062886A1 (en) * 2012-10-17 2014-04-24 Tokyo Electron Limited Plasma etching endpoint detection using multivariate analysis
JP6173851B2 (ja) * 2013-09-20 2017-08-02 株式会社日立ハイテクノロジーズ 分析方法およびプラズマエッチング装置
JP6220319B2 (ja) * 2014-07-17 2017-10-25 株式会社日立ハイテクノロジーズ データ解析方法及びプラズマエッチング方法並びにプラズマ処理装置
KR101532897B1 (ko) * 2015-01-08 2015-07-02 성균관대학교산학협력단 플라즈마 식각 공정의 식각 종료점 진단방법
JP2016134530A (ja) 2015-01-20 2016-07-25 株式会社東芝 加工制御装置、加工制御プログラムおよび加工制御方法
JP6310866B2 (ja) 2015-01-30 2018-04-11 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法並びに解析方法
US10692705B2 (en) 2015-11-16 2020-06-23 Tokyo Electron Limited Advanced optical sensor and method for detecting an optical event in a light emission signal in a plasma chamber
SG11201808603VA (en) 2016-03-31 2018-10-30 Tokyo Electron Ltd Controlling dry etch process characteristics using waferless dry clean optical emission spectroscopy
US10453653B2 (en) 2016-09-02 2019-10-22 Tokyo Electron Limited Endpoint detection algorithm for atomic layer etching (ALE)
US10436717B2 (en) 2016-11-18 2019-10-08 Tokyo Electron Limited Compositional optical emission spectroscopy for detection of particle induced arcs in a fabrication process
KR20190121864A (ko) 2017-03-17 2019-10-28 도쿄엘렉트론가부시키가이샤 에칭 메트릭 향상을 위한 표면 개질 제어
JP6875224B2 (ja) 2017-08-08 2021-05-19 株式会社日立ハイテク プラズマ処理装置及び半導体装置製造システム
KR102857289B1 (ko) 2019-05-23 2025-09-08 도쿄엘렉트론가부시키가이샤 초분광 이미징을 사용하는 반도체 공정의 광학적 진단
US10910201B1 (en) 2019-08-22 2021-02-02 Tokyo Electron Limited Synthetic wavelengths for endpoint detection in plasma etching
JP7413081B2 (ja) * 2020-02-28 2024-01-15 東京エレクトロン株式会社 基板処理システム
US12074076B2 (en) * 2020-03-11 2024-08-27 Hitachi High-Tech Corporation Plasma processing apparatus and plasma processing method
DE102020107518A1 (de) 2020-03-18 2021-09-23 Aixtron Se Verfahren zum Ermitteln des Endes eines Reinigungsprozesses der Prozesskammer eines MOCVD-Reaktors
CN113447243B (zh) * 2020-05-26 2023-03-10 重庆康佳光电技术研究院有限公司 一种终点检测装置、蚀刻设备以及检测方法
US12306044B2 (en) 2022-09-20 2025-05-20 Tokyo Electron Limited Optical emission spectroscopy for advanced process characterization
US12158374B2 (en) 2022-10-25 2024-12-03 Tokyo Electron Limited Time-resolved OES data collection
US12362158B2 (en) 2022-10-25 2025-07-15 Tokyo Electron Limited Method for OES data collection and endpoint detection

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JP3117355B2 (ja) * 1993-03-04 2000-12-11 東京エレクトロン株式会社 プラズマ処理の終点検出方法
EP0735565B1 (en) * 1995-03-31 1999-06-02 International Business Machines Corporation Method and apparatus for monitoring the dry etching of a dielectric film to a given thickness
WO1999040617A1 (en) * 1998-02-03 1999-08-12 Tokyo Electron Yamanashi Limited End point detecting method for semiconductor plasma processing
JP4051470B2 (ja) * 1999-05-18 2008-02-27 東京エレクトロン株式会社 終点検出方法
JP4444428B2 (ja) * 2000-01-28 2010-03-31 東京エレクトロン株式会社 エッチング深さの検出方法並びにエッチングモニター装置及びエッチング装置
JP3884894B2 (ja) * 2000-03-01 2007-02-21 株式会社日立製作所 プラズマエッチング処理装置
JP3708031B2 (ja) * 2001-06-29 2005-10-19 株式会社日立製作所 プラズマ処理装置および処理方法
JP2004079727A (ja) 2002-08-15 2004-03-11 Fujitsu Ltd エッチング終点検出方法、エッチング終点検出システム、エッチング装置、およびエッチング終点検出プログラム
JP4165638B2 (ja) * 2002-09-02 2008-10-15 東京エレクトロン株式会社 プロセスの監視方法及びプラズマ処理装置
JP4833687B2 (ja) * 2006-02-27 2011-12-07 株式会社日立ハイテクノロジーズ プラズマ処理装置
US8202582B2 (en) * 2006-06-30 2012-06-19 Oji Paper Co., Ltd. Single particle film etching mask and production method of single particle film etching mask, production method of micro structure with use of single particle film etching mask and micro structure produced by micro structure production method
JP2008218898A (ja) * 2007-03-07 2008-09-18 Hitachi High-Technologies Corp プラズマ処理装置
KR100892248B1 (ko) * 2007-07-24 2009-04-09 주식회사 디엠에스 플라즈마 반응기의 실시간 제어를 실현하는 종말점 검출장치 및 이를 포함하는 플라즈마 반응기 및 그 종말점 검출방법
JP5192850B2 (ja) * 2008-02-27 2013-05-08 株式会社日立ハイテクノロジーズ エッチング終点判定方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110530825A (zh) * 2018-05-23 2019-12-03 亚智科技股份有限公司 蚀刻时间侦测方法及蚀刻时间侦测系统
CN114063479A (zh) * 2021-11-12 2022-02-18 华科电子股份有限公司 应用于蚀刻机的多路输出模块的射频电源控制方法及系统
CN114063479B (zh) * 2021-11-12 2024-01-23 华科电子股份有限公司 应用于蚀刻机的多路输出模块的射频电源控制方法及系统

Also Published As

Publication number Publication date
US20090211706A1 (en) 2009-08-27
JP5192850B2 (ja) 2013-05-08
KR20090092677A (ko) 2009-09-01
KR101015517B1 (ko) 2011-02-16
JP2009206275A (ja) 2009-09-10
US20120085494A1 (en) 2012-04-12
US8083960B2 (en) 2011-12-27
TWI373806B (enExample) 2012-10-01

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