JP5192850B2 - エッチング終点判定方法 - Google Patents

エッチング終点判定方法 Download PDF

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Publication number
JP5192850B2
JP5192850B2 JP2008046533A JP2008046533A JP5192850B2 JP 5192850 B2 JP5192850 B2 JP 5192850B2 JP 2008046533 A JP2008046533 A JP 2008046533A JP 2008046533 A JP2008046533 A JP 2008046533A JP 5192850 B2 JP5192850 B2 JP 5192850B2
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end point
plasma
etching
regression line
generated
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Japanese (ja)
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JP2009206275A (ja
Inventor
丈滋 内田
大輔 白石
祥二 幾原
昭 鹿子嶋
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Priority to JP2008046533A priority Critical patent/JP5192850B2/ja
Priority to TW097129525A priority patent/TW200937518A/zh
Priority to US12/189,883 priority patent/US8083960B2/en
Priority to KR1020080080828A priority patent/KR101015517B1/ko
Publication of JP2009206275A publication Critical patent/JP2009206275A/ja
Priority to US13/325,563 priority patent/US20120085494A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2008046533A 2008-02-27 2008-02-27 エッチング終点判定方法 Active JP5192850B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2008046533A JP5192850B2 (ja) 2008-02-27 2008-02-27 エッチング終点判定方法
TW097129525A TW200937518A (en) 2008-02-27 2008-08-04 Etching endpoint determination method
US12/189,883 US8083960B2 (en) 2008-02-27 2008-08-12 Etching endpoint determination method
KR1020080080828A KR101015517B1 (ko) 2008-02-27 2008-08-19 에칭 종점 판정 방법
US13/325,563 US20120085494A1 (en) 2008-02-27 2011-12-14 Plasma Etching Apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008046533A JP5192850B2 (ja) 2008-02-27 2008-02-27 エッチング終点判定方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013016875A Division JP5384758B2 (ja) 2013-01-31 2013-01-31 プラズマエッチング装置

Publications (2)

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JP2009206275A JP2009206275A (ja) 2009-09-10
JP5192850B2 true JP5192850B2 (ja) 2013-05-08

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Family Applications (1)

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JP2008046533A Active JP5192850B2 (ja) 2008-02-27 2008-02-27 エッチング終点判定方法

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US (2) US8083960B2 (enExample)
JP (1) JP5192850B2 (enExample)
KR (1) KR101015517B1 (enExample)
TW (1) TW200937518A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9859103B2 (en) 2015-01-20 2018-01-02 Toshiba Memory Corporation Process control device, recording medium, and process control method

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JP5192850B2 (ja) * 2008-02-27 2013-05-08 株式会社日立ハイテクノロジーズ エッチング終点判定方法
KR101117928B1 (ko) 2010-06-07 2012-02-29 명지대학교 산학협력단 플라즈마 공정 진단 시스템 및 이에 있어서 종료점 검출 방법 및 장치
JP5675195B2 (ja) 2010-07-20 2015-02-25 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
CN102812157B (zh) * 2010-11-30 2014-08-20 深圳市华星光电技术有限公司 金属蚀刻方法、金属蚀刻控制方法及其装置
JP5699795B2 (ja) * 2011-05-12 2015-04-15 富士通セミコンダクター株式会社 半導体装置の製造方法及半導体製造装置
JP6002487B2 (ja) 2012-07-20 2016-10-05 株式会社日立ハイテクノロジーズ 分析方法、分析装置、及びエッチング処理システム
CN104736744B (zh) * 2012-10-17 2017-06-06 东京毅力科创株式会社 使用多变量分析的等离子体蚀刻终点检测
JP6173851B2 (ja) 2013-09-20 2017-08-02 株式会社日立ハイテクノロジーズ 分析方法およびプラズマエッチング装置
JP6220319B2 (ja) * 2014-07-17 2017-10-25 株式会社日立ハイテクノロジーズ データ解析方法及びプラズマエッチング方法並びにプラズマ処理装置
KR101532897B1 (ko) * 2015-01-08 2015-07-02 성균관대학교산학협력단 플라즈마 식각 공정의 식각 종료점 진단방법
JP6310866B2 (ja) 2015-01-30 2018-04-11 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法並びに解析方法
WO2017087378A1 (en) 2015-11-16 2017-05-26 Tokyo Electron Limited Advanced optical sensor and method for plasma chamber
JP6974668B2 (ja) 2016-03-31 2021-12-01 東京エレクトロン株式会社 ウェハレスドライクリーニング発光分光法を使用するドライエッチングプロセス特徴の制御
US10453653B2 (en) 2016-09-02 2019-10-22 Tokyo Electron Limited Endpoint detection algorithm for atomic layer etching (ALE)
KR102520779B1 (ko) 2016-11-18 2023-04-11 도쿄엘렉트론가부시키가이샤 제조 공정에서 입자 유도 아크 검출을 위한 조성 발광 분광법
JP2020515063A (ja) 2017-03-17 2020-05-21 東京エレクトロン株式会社 エッチングメトリックを向上させるための表面改質制御
JP6875224B2 (ja) 2017-08-08 2021-05-19 株式会社日立ハイテク プラズマ処理装置及び半導体装置製造システム
TWI659258B (zh) * 2018-05-23 2019-05-11 亞智科技股份有限公司 蝕刻時間偵測方法及蝕刻時間偵測系統
US11538722B2 (en) 2019-05-23 2022-12-27 Tokyo Electron Limited Optical diagnostics of semiconductor process using hyperspectral imaging
US10910201B1 (en) 2019-08-22 2021-02-02 Tokyo Electron Limited Synthetic wavelengths for endpoint detection in plasma etching
JP7413081B2 (ja) * 2020-02-28 2024-01-15 東京エレクトロン株式会社 基板処理システム
US12074076B2 (en) * 2020-03-11 2024-08-27 Hitachi High-Tech Corporation Plasma processing apparatus and plasma processing method
DE102020107518A1 (de) 2020-03-18 2021-09-23 Aixtron Se Verfahren zum Ermitteln des Endes eines Reinigungsprozesses der Prozesskammer eines MOCVD-Reaktors
CN113447243B (zh) * 2020-05-26 2023-03-10 重庆康佳光电技术研究院有限公司 一种终点检测装置、蚀刻设备以及检测方法
CN114063479B (zh) * 2021-11-12 2024-01-23 华科电子股份有限公司 应用于蚀刻机的多路输出模块的射频电源控制方法及系统
US12306044B2 (en) 2022-09-20 2025-05-20 Tokyo Electron Limited Optical emission spectroscopy for advanced process characterization
US12158374B2 (en) 2022-10-25 2024-12-03 Tokyo Electron Limited Time-resolved OES data collection
US12362158B2 (en) 2022-10-25 2025-07-15 Tokyo Electron Limited Method for OES data collection and endpoint detection

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JPS6393115A (ja) * 1986-10-08 1988-04-23 Hitachi Ltd 終点判定方法
JPH0268435U (enExample) * 1988-11-11 1990-05-24
JPH03181129A (ja) * 1989-12-11 1991-08-07 Sumitomo Metal Ind Ltd エッチングの終点検知方法
US5362356A (en) * 1990-12-20 1994-11-08 Lsi Logic Corporation Plasma etching process control
JP3117355B2 (ja) * 1993-03-04 2000-12-11 東京エレクトロン株式会社 プラズマ処理の終点検出方法
JP3118743B2 (ja) * 1993-12-04 2000-12-18 東京エレクトロン株式会社 プラズマ処理装置
US5728253A (en) * 1993-03-04 1998-03-17 Tokyo Electron Limited Method and devices for detecting the end point of plasma process
DE69510032T2 (de) * 1995-03-31 2000-01-27 International Business Machines Corp., Armonk Verfahren und Gerät zur Überwachung des Trockenätzens eines dielektrischen Films bis zu einer gegebenen Dicke
US6297064B1 (en) * 1998-02-03 2001-10-02 Tokyo Electron Yamanashi Limited End point detecting method for semiconductor plasma processing
JP4051470B2 (ja) * 1999-05-18 2008-02-27 東京エレクトロン株式会社 終点検出方法
JP4444428B2 (ja) * 2000-01-28 2010-03-31 東京エレクトロン株式会社 エッチング深さの検出方法並びにエッチングモニター装置及びエッチング装置
JP3884894B2 (ja) * 2000-03-01 2007-02-21 株式会社日立製作所 プラズマエッチング処理装置
JP3708031B2 (ja) * 2001-06-29 2005-10-19 株式会社日立製作所 プラズマ処理装置および処理方法
JP2004079727A (ja) 2002-08-15 2004-03-11 Fujitsu Ltd エッチング終点検出方法、エッチング終点検出システム、エッチング装置、およびエッチング終点検出プログラム
JP4165638B2 (ja) * 2002-09-02 2008-10-15 東京エレクトロン株式会社 プロセスの監視方法及びプラズマ処理装置
JP4833687B2 (ja) * 2006-02-27 2011-12-07 株式会社日立ハイテクノロジーズ プラズマ処理装置
CN101479031B (zh) * 2006-06-30 2012-11-14 王子制纸株式会社 单粒子膜蚀刻掩模及其制造方法、使用该单粒子膜蚀刻掩模的微细结构体的制造方法及通过该制造方法得到的微细结构体
JP2008218898A (ja) * 2007-03-07 2008-09-18 Hitachi High-Technologies Corp プラズマ処理装置
KR100892248B1 (ko) * 2007-07-24 2009-04-09 주식회사 디엠에스 플라즈마 반응기의 실시간 제어를 실현하는 종말점 검출장치 및 이를 포함하는 플라즈마 반응기 및 그 종말점 검출방법
JP5192850B2 (ja) * 2008-02-27 2013-05-08 株式会社日立ハイテクノロジーズ エッチング終点判定方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9859103B2 (en) 2015-01-20 2018-01-02 Toshiba Memory Corporation Process control device, recording medium, and process control method

Also Published As

Publication number Publication date
TWI373806B (enExample) 2012-10-01
JP2009206275A (ja) 2009-09-10
KR20090092677A (ko) 2009-09-01
KR101015517B1 (ko) 2011-02-16
US20120085494A1 (en) 2012-04-12
TW200937518A (en) 2009-09-01
US8083960B2 (en) 2011-12-27
US20090211706A1 (en) 2009-08-27

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