TW200919606A - Method of manufacturing substrate - Google Patents

Method of manufacturing substrate Download PDF

Info

Publication number
TW200919606A
TW200919606A TW097138683A TW97138683A TW200919606A TW 200919606 A TW200919606 A TW 200919606A TW 097138683 A TW097138683 A TW 097138683A TW 97138683 A TW97138683 A TW 97138683A TW 200919606 A TW200919606 A TW 200919606A
Authority
TW
Taiwan
Prior art keywords
substrate
hole
forming
insulating film
germanium
Prior art date
Application number
TW097138683A
Other languages
English (en)
Chinese (zh)
Inventor
Yuichi Taguchi
Akinori Shiraishi
Masahiro Sunohara
Kei Murayama
Hideaki Sakaguchi
Mitsutoshi Higashi
Original Assignee
Shinko Electric Ind Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Ind Co filed Critical Shinko Electric Ind Co
Publication of TW200919606A publication Critical patent/TW200919606A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W78/00—Detachable holders for supporting packaged chips in operation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/095—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers of vias therein
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0245—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising use of blind vias during the manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H10W20/211—Through-semiconductor vias, e.g. TSVs
    • H10W20/212—Top-view shapes or dispositions, e.g. top-view layouts of the vias
    • H10W20/2125—Top-view shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/127—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed characterised by arrangements for sealing or adhesion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Micromachines (AREA)
TW097138683A 2007-10-09 2008-10-08 Method of manufacturing substrate TW200919606A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007263224 2007-10-09

Publications (1)

Publication Number Publication Date
TW200919606A true TW200919606A (en) 2009-05-01

Family

ID=40351813

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097138683A TW200919606A (en) 2007-10-09 2008-10-08 Method of manufacturing substrate

Country Status (5)

Country Link
US (1) US7795140B2 (https=)
EP (1) EP2048923A3 (https=)
JP (1) JP5536322B2 (https=)
KR (1) KR20090036521A (https=)
TW (1) TW200919606A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103839870A (zh) * 2012-11-20 2014-06-04 中微半导体设备(上海)有限公司 用于tsv刻蚀中改善硅通孔侧壁粗糙度的方法
TWI623752B (zh) * 2013-03-18 2018-05-11 日本電子材料股份有限公司 用於探針卡的導板

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8569876B2 (en) 2006-11-22 2013-10-29 Tessera, Inc. Packaged semiconductor chips with array
US8049327B2 (en) * 2009-01-05 2011-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Through-silicon via with scalloped sidewalls
TWI392069B (zh) 2009-11-24 2013-04-01 日月光半導體製造股份有限公司 封裝結構及其封裝製程
WO2011125546A1 (ja) 2010-03-31 2011-10-13 京セラ株式会社 インターポーザー及びそれを用いた電子装置
DE102010029760B4 (de) * 2010-06-07 2019-02-21 Robert Bosch Gmbh Bauelement mit einer Durchkontaktierung und Verfahren zu seiner Herstellung
US9640437B2 (en) 2010-07-23 2017-05-02 Tessera, Inc. Methods of forming semiconductor elements using micro-abrasive particle stream
TWI446420B (zh) 2010-08-27 2014-07-21 日月光半導體製造股份有限公司 用於半導體製程之載體分離方法
TWI445152B (zh) 2010-08-30 2014-07-11 日月光半導體製造股份有限公司 半導體結構及其製作方法
US9007273B2 (en) 2010-09-09 2015-04-14 Advances Semiconductor Engineering, Inc. Semiconductor package integrated with conformal shield and antenna
US8847380B2 (en) 2010-09-17 2014-09-30 Tessera, Inc. Staged via formation from both sides of chip
TWI434387B (zh) 2010-10-11 2014-04-11 日月光半導體製造股份有限公司 具有穿導孔之半導體裝置及具有穿導孔之半導體裝置之封裝結構及其製造方法
TW201241941A (en) * 2010-10-21 2012-10-16 Sumitomo Bakelite Co A method for manufacturing an electronic equipment, and the electronic equipment obtained by using the method, as well as a method for manufacturing electronics and electronic parts, and the electronics and the electronic parts obtained using the method
TWI527174B (zh) 2010-11-19 2016-03-21 日月光半導體製造股份有限公司 具有半導體元件之封裝結構
US8587126B2 (en) 2010-12-02 2013-11-19 Tessera, Inc. Stacked microelectronic assembly with TSVs formed in stages with plural active chips
US8736066B2 (en) * 2010-12-02 2014-05-27 Tessera, Inc. Stacked microelectronic assemby with TSVS formed in stages and carrier above chip
TWI445155B (zh) 2011-01-06 2014-07-11 日月光半導體製造股份有限公司 堆疊式封裝結構及其製造方法
US8853819B2 (en) 2011-01-07 2014-10-07 Advanced Semiconductor Engineering, Inc. Semiconductor structure with passive element network and manufacturing method thereof
KR101767654B1 (ko) 2011-05-19 2017-08-14 삼성전자주식회사 에어 갭 절연 구조를 갖는 관통전극을 구비한 반도체 소자 및 그 제조방법
KR101867998B1 (ko) * 2011-06-14 2018-06-15 삼성전자주식회사 패턴 형성 방법
US8541883B2 (en) 2011-11-29 2013-09-24 Advanced Semiconductor Engineering, Inc. Semiconductor device having shielded conductive vias
US8742591B2 (en) 2011-12-21 2014-06-03 Stats Chippac, Ltd. Semiconductor device and method of forming insulating layer in notches around conductive TSV for stress relief
US8975157B2 (en) 2012-02-08 2015-03-10 Advanced Semiconductor Engineering, Inc. Carrier bonding and detaching processes for a semiconductor wafer
US8963316B2 (en) 2012-02-15 2015-02-24 Advanced Semiconductor Engineering, Inc. Semiconductor device and method for manufacturing the same
US8786060B2 (en) 2012-05-04 2014-07-22 Advanced Semiconductor Engineering, Inc. Semiconductor package integrated with conformal shield and antenna
US9153542B2 (en) 2012-08-01 2015-10-06 Advanced Semiconductor Engineering, Inc. Semiconductor package having an antenna and manufacturing method thereof
US8937387B2 (en) 2012-11-07 2015-01-20 Advanced Semiconductor Engineering, Inc. Semiconductor device with conductive vias
US9159699B2 (en) * 2012-11-13 2015-10-13 Delta Electronics, Inc. Interconnection structure having a via structure
US8952542B2 (en) 2012-11-14 2015-02-10 Advanced Semiconductor Engineering, Inc. Method for dicing a semiconductor wafer having through silicon vias and resultant structures
US9406552B2 (en) 2012-12-20 2016-08-02 Advanced Semiconductor Engineering, Inc. Semiconductor device having conductive via and manufacturing process
US8841751B2 (en) 2013-01-23 2014-09-23 Advanced Semiconductor Engineering, Inc. Through silicon vias for semiconductor devices and manufacturing method thereof
US9978688B2 (en) 2013-02-28 2018-05-22 Advanced Semiconductor Engineering, Inc. Semiconductor package having a waveguide antenna and manufacturing method thereof
US9089268B2 (en) 2013-03-13 2015-07-28 Advanced Semiconductor Engineering, Inc. Neural sensing device and method for making the same
US8987734B2 (en) 2013-03-15 2015-03-24 Advanced Semiconductor Engineering, Inc. Semiconductor wafer, semiconductor process and semiconductor package
US9173583B2 (en) 2013-03-15 2015-11-03 Advanced Semiconductor Engineering, Inc. Neural sensing device and method for making the same
JP2015072996A (ja) * 2013-10-02 2015-04-16 新光電気工業株式会社 半導体装置
JP5846185B2 (ja) 2013-11-21 2016-01-20 大日本印刷株式会社 貫通電極基板及び貫通電極基板を用いた半導体装置
CN110265347A (zh) 2019-06-06 2019-09-20 深圳市华星光电技术有限公司 一种基板
EP3813101B1 (en) * 2019-10-25 2026-03-25 ams AG Method of producing a semiconductor body with a trench
KR20250040229A (ko) * 2023-09-15 2025-03-24 에스케이하이닉스 주식회사 본딩 구조체, 이를 포함하는 반도체 장치 및 그 제조방법

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4860022B2 (ja) * 2000-01-25 2012-01-25 エルピーダメモリ株式会社 半導体集積回路装置の製造方法
JP3949941B2 (ja) * 2001-11-26 2007-07-25 株式会社東芝 半導体装置の製造方法および研磨装置
US6846746B2 (en) * 2002-05-01 2005-01-25 Applied Materials, Inc. Method of smoothing a trench sidewall after a deep trench silicon etch process
US6759340B2 (en) * 2002-05-09 2004-07-06 Padmapani C. Nallan Method of etching a trench in a silicon-on-insulator (SOI) structure
JP2004128063A (ja) * 2002-09-30 2004-04-22 Toshiba Corp 半導体装置及びその製造方法
JP4330367B2 (ja) * 2003-04-03 2009-09-16 新光電気工業株式会社 インターポーザー及びその製造方法ならびに電子装置
TWI229890B (en) * 2003-04-24 2005-03-21 Sanyo Electric Co Semiconductor device and method of manufacturing same
JP3816484B2 (ja) 2003-12-15 2006-08-30 日本航空電子工業株式会社 ドライエッチング方法
JP4477435B2 (ja) * 2004-06-29 2010-06-09 キヤノン株式会社 偏向器作製方法、荷電粒子線露光装置及びデバイス製造方法
JP4564342B2 (ja) * 2004-11-24 2010-10-20 大日本印刷株式会社 多層配線基板およびその製造方法
JP4564343B2 (ja) * 2004-11-24 2010-10-20 大日本印刷株式会社 導電材充填スルーホール基板の製造方法
US7285823B2 (en) * 2005-02-15 2007-10-23 Semiconductor Components Industries, L.L.C. Superjunction semiconductor device structure
JP2006351935A (ja) * 2005-06-17 2006-12-28 Shinko Electric Ind Co Ltd 半導体チップ実装基板及びそれを用いた半導体装置
US7425507B2 (en) * 2005-06-28 2008-09-16 Micron Technology, Inc. Semiconductor substrates including vias of nonuniform cross section, methods of forming and associated structures
JP4812512B2 (ja) * 2006-05-19 2011-11-09 オンセミコンダクター・トレーディング・リミテッド 半導体装置の製造方法
JP5143382B2 (ja) * 2006-07-27 2013-02-13 オンセミコンダクター・トレーディング・リミテッド 半導体装置及びその製造方法
JP2008053568A (ja) * 2006-08-25 2008-03-06 Nec Electronics Corp 半導体装置および半導体装置の製造方法
JP2008227177A (ja) * 2007-03-13 2008-09-25 Nec Corp インターポーザ、半導体モジュール、及びそれらの製造方法
JP2011009781A (ja) * 2010-09-29 2011-01-13 Fujikura Ltd 貫通電極付き半導体デバイスの製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103839870A (zh) * 2012-11-20 2014-06-04 中微半导体设备(上海)有限公司 用于tsv刻蚀中改善硅通孔侧壁粗糙度的方法
CN103839870B (zh) * 2012-11-20 2016-08-17 中微半导体设备(上海)有限公司 用于tsv刻蚀中改善硅通孔侧壁粗糙度的方法
TWI623752B (zh) * 2013-03-18 2018-05-11 日本電子材料股份有限公司 用於探針卡的導板

Also Published As

Publication number Publication date
EP2048923A2 (en) 2009-04-15
EP2048923A3 (en) 2010-12-08
KR20090036521A (ko) 2009-04-14
US20090093117A1 (en) 2009-04-09
JP2009111367A (ja) 2009-05-21
JP5536322B2 (ja) 2014-07-02
US7795140B2 (en) 2010-09-14

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