TW200905400A - Photosensitive resin composition - Google Patents

Photosensitive resin composition Download PDF

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Publication number
TW200905400A
TW200905400A TW097111085A TW97111085A TW200905400A TW 200905400 A TW200905400 A TW 200905400A TW 097111085 A TW097111085 A TW 097111085A TW 97111085 A TW97111085 A TW 97111085A TW 200905400 A TW200905400 A TW 200905400A
Authority
TW
Taiwan
Prior art keywords
group
component
compound
photosensitive
film
Prior art date
Application number
TW097111085A
Other languages
English (en)
Chinese (zh)
Other versions
TWI375125B (enExample
Inventor
Tomohiro Yorisue
Original Assignee
Asahi Kasei Emd Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Kasei Emd Corp filed Critical Asahi Kasei Emd Corp
Publication of TW200905400A publication Critical patent/TW200905400A/zh
Application granted granted Critical
Publication of TWI375125B publication Critical patent/TWI375125B/zh

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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F299/00Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F290/00Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
    • C08F290/08Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated side groups
    • C08F290/14Polymers provided for in subclass C08G
    • C08F290/148Polysiloxanes
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F299/00Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers
    • C08F299/02Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates
    • C08F299/08Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates from polysiloxanes
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • C08G77/20Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/48Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • C08G77/58Metal-containing linkages
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/14Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/029Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/70Siloxanes defined by use of the MDTQ nomenclature
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Inorganic Chemistry (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials For Photolithography (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Silicon Polymers (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
TW097111085A 2007-04-04 2008-03-27 Photosensitive resin composition TW200905400A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007098088 2007-04-04

Publications (2)

Publication Number Publication Date
TW200905400A true TW200905400A (en) 2009-02-01
TWI375125B TWI375125B (enExample) 2012-10-21

Family

ID=39830705

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097111085A TW200905400A (en) 2007-04-04 2008-03-27 Photosensitive resin composition

Country Status (8)

Country Link
US (1) US8557498B2 (enExample)
EP (1) EP2133744B1 (enExample)
JP (1) JP5144646B2 (enExample)
KR (1) KR101121936B1 (enExample)
CN (1) CN101646978B (enExample)
AT (1) ATE516519T1 (enExample)
TW (1) TW200905400A (enExample)
WO (1) WO2008123210A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI549978B (zh) * 2011-01-21 2016-09-21 應用研究促進協會法蘭霍夫公司 可聚合的組成物,其生成之固化產物,及該等材料之用途

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* Cited by examiner, † Cited by third party
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CN101802033B (zh) * 2007-12-14 2013-03-13 旭化成电子材料株式会社 感光性树脂组合物
JP5607898B2 (ja) * 2008-07-01 2014-10-15 旭化成イーマテリアルズ株式会社 感光性樹脂組成物
JP5576622B2 (ja) * 2008-07-01 2014-08-20 旭化成イーマテリアルズ株式会社 感光性樹脂組成物
US8372504B2 (en) * 2009-01-13 2013-02-12 Korea Advanced Institute Of Science And Technology Transparent composite compound
JP5636869B2 (ja) * 2010-10-20 2014-12-10 Jsr株式会社 感放射線性組成物、硬化膜、及びそれらの形成方法
KR102232349B1 (ko) 2013-05-31 2021-03-26 롬엔드하스전자재료코리아유한회사 고내열성 네거티브형 감광성 수지 조성물 및 이로부터 제조된 경화막
CN105723261A (zh) * 2013-10-21 2016-06-29 学校法人东海大学 光波导的制造方法
JP6603115B2 (ja) * 2015-11-27 2019-11-06 信越化学工業株式会社 ケイ素含有縮合物、ケイ素含有レジスト下層膜形成用組成物、及びパターン形成方法
EP3243845A1 (en) 2016-05-13 2017-11-15 Ricoh Company, Ltd. Active energy ray curable composition, cured product, composition storage container, two-dimensional or three-dimensional image forming apparatus, and two-dimensional or three-dimensional image forming method
CN110221731B (zh) * 2018-03-02 2023-03-28 宸鸿光电科技股份有限公司 触控面板的直接图案化方法及其触控面板
KR20250001148A (ko) 2023-06-28 2025-01-06 주식회사 창발켐텍 새로운 글리시딜옥시프로필 유기 실록산 공중합체 및 이의 제조방법

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JPS6167263A (ja) 1984-09-10 1986-04-07 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
DE59107840D1 (de) * 1990-11-21 1996-06-27 Ciba Geigy Ag Silylierte Acylphosphinoxide
JPH04198270A (ja) * 1990-11-27 1992-07-17 Toshiba Silicone Co Ltd 光硬化型シリコーン組成物及びその接着剤組成物
JPH05202146A (ja) 1991-12-27 1993-08-10 I C I Japan Kk 光硬化性樹脂組成物
JPH1083080A (ja) * 1996-06-26 1998-03-31 Dow Corning Asia Kk 紫外線硬化性組成物およびこれを用いた硬化物パターンの形成方法
US5861235A (en) * 1996-06-26 1999-01-19 Dow Corning Asia, Ltd. Ultraviolet-curable composition and method for patterning the cured product therefrom
JPH1010741A (ja) * 1996-06-27 1998-01-16 Dow Corning Asia Kk 紫外線硬化性ポリシロキサン組成物およびこれを用いた硬化物パターンの製造方法
WO2000036016A1 (en) * 1998-12-16 2000-06-22 Asahi Kasei Kabushiki Kaisha Flame-retardant polycarbonate resin composition with excellent melt flowability
DE19932629A1 (de) * 1999-07-13 2001-01-18 Fraunhofer Ges Forschung Organisch modifizierte, lagerstabile, UV-härtbare, NIR-durchlässige und in Schichtdicken von 1 bis 150 mum fotostrukturierbare Kieselsäurepolykondensate, deren Herstellung und deren Verwendung
JP3904518B2 (ja) * 2001-04-09 2007-04-11 積水化学工業株式会社 光反応性組成物
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI549978B (zh) * 2011-01-21 2016-09-21 應用研究促進協會法蘭霍夫公司 可聚合的組成物,其生成之固化產物,及該等材料之用途

Also Published As

Publication number Publication date
EP2133744A1 (en) 2009-12-16
CN101646978A (zh) 2010-02-10
US20100104827A1 (en) 2010-04-29
JP5144646B2 (ja) 2013-02-13
EP2133744B1 (en) 2011-07-13
KR20100009536A (ko) 2010-01-27
CN101646978B (zh) 2011-11-02
TWI375125B (enExample) 2012-10-21
ATE516519T1 (de) 2011-07-15
EP2133744A4 (en) 2010-06-16
JPWO2008123210A1 (ja) 2010-07-15
US8557498B2 (en) 2013-10-15
KR101121936B1 (ko) 2012-03-09
WO2008123210A1 (ja) 2008-10-16

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