ATE516519T1 - Lichtempfindliche harzzusammensetzung - Google Patents

Lichtempfindliche harzzusammensetzung

Info

Publication number
ATE516519T1
ATE516519T1 AT08738789T AT08738789T ATE516519T1 AT E516519 T1 ATE516519 T1 AT E516519T1 AT 08738789 T AT08738789 T AT 08738789T AT 08738789 T AT08738789 T AT 08738789T AT E516519 T1 ATE516519 T1 AT E516519T1
Authority
AT
Austria
Prior art keywords
resin composition
photosensitive resin
photosensitive
cured
relief pattern
Prior art date
Application number
AT08738789T
Other languages
English (en)
Inventor
Tomohiro Yorisue
Original Assignee
Asahi Kasei E Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Kasei E Materials Corp filed Critical Asahi Kasei E Materials Corp
Application granted granted Critical
Publication of ATE516519T1 publication Critical patent/ATE516519T1/de

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F299/00Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F290/00Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
    • C08F290/08Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated side groups
    • C08F290/14Polymers provided for in subclass C08G
    • C08F290/148Polysiloxanes
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F299/00Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers
    • C08F299/02Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates
    • C08F299/08Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates from polysiloxanes
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • C08G77/20Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/48Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • C08G77/58Metal-containing linkages
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/14Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/029Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/70Siloxanes defined by use of the MDTQ nomenclature
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Silicon Polymers (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
AT08738789T 2007-04-04 2008-03-25 Lichtempfindliche harzzusammensetzung ATE516519T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007098088 2007-04-04
PCT/JP2008/055480 WO2008123210A1 (ja) 2007-04-04 2008-03-25 感光性樹脂組成物

Publications (1)

Publication Number Publication Date
ATE516519T1 true ATE516519T1 (de) 2011-07-15

Family

ID=39830705

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08738789T ATE516519T1 (de) 2007-04-04 2008-03-25 Lichtempfindliche harzzusammensetzung

Country Status (8)

Country Link
US (1) US8557498B2 (de)
EP (1) EP2133744B1 (de)
JP (1) JP5144646B2 (de)
KR (1) KR101121936B1 (de)
CN (1) CN101646978B (de)
AT (1) ATE516519T1 (de)
TW (1) TW200905400A (de)
WO (1) WO2008123210A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102902162A (zh) 2007-12-14 2013-01-30 旭化成电子材料株式会社 感光性树脂组合物
JP5607898B2 (ja) * 2008-07-01 2014-10-15 旭化成イーマテリアルズ株式会社 感光性樹脂組成物
JP5576622B2 (ja) * 2008-07-01 2014-08-20 旭化成イーマテリアルズ株式会社 感光性樹脂組成物
US8372504B2 (en) * 2009-01-13 2013-02-12 Korea Advanced Institute Of Science And Technology Transparent composite compound
JP5636869B2 (ja) * 2010-10-20 2014-12-10 Jsr株式会社 感放射線性組成物、硬化膜、及びそれらの形成方法
EP2665762B1 (de) * 2011-01-21 2020-12-02 Fraunhofer-Gesellschaft zur Förderung der Angewandten Forschung e.V. Polymerisierbare zusammensetzungen, damit hergestellte gehärtete produkte sowie verwendung dieser materialien
KR102232349B1 (ko) 2013-05-31 2021-03-26 롬엔드하스전자재료코리아유한회사 고내열성 네거티브형 감광성 수지 조성물 및 이로부터 제조된 경화막
JPWO2015060190A1 (ja) * 2013-10-21 2017-03-09 学校法人東海大学 光導波路の製造方法
JP6603115B2 (ja) * 2015-11-27 2019-11-06 信越化学工業株式会社 ケイ素含有縮合物、ケイ素含有レジスト下層膜形成用組成物、及びパターン形成方法
EP3243845A1 (de) * 2016-05-13 2017-11-15 Ricoh Company, Ltd. Mit aktiver strahlung härtbare zusammensetzung, gehärtetes produkt, zusammensetzungs-lagerbehälter, vorrichtung zur erzeugung zwei- oder dreidimensionaler bilder, vorrichtung und verfahren zur erzeugung zwei- oder dreidimensionaler bilder
CN110221731B (zh) * 2018-03-02 2023-03-28 宸鸿光电科技股份有限公司 触控面板的直接图案化方法及其触控面板

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6167263A (ja) 1984-09-10 1986-04-07 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
EP0487453B1 (de) * 1990-11-21 1996-05-22 Ciba-Geigy Ag Silylierte Acylphosphinoxide
JPH04198270A (ja) * 1990-11-27 1992-07-17 Toshiba Silicone Co Ltd 光硬化型シリコーン組成物及びその接着剤組成物
JPH05202146A (ja) * 1991-12-27 1993-08-10 I C I Japan Kk 光硬化性樹脂組成物
US5861235A (en) * 1996-06-26 1999-01-19 Dow Corning Asia, Ltd. Ultraviolet-curable composition and method for patterning the cured product therefrom
JPH1083080A (ja) 1996-06-26 1998-03-31 Dow Corning Asia Kk 紫外線硬化性組成物およびこれを用いた硬化物パターンの形成方法
JPH1010741A (ja) * 1996-06-27 1998-01-16 Dow Corning Asia Kk 紫外線硬化性ポリシロキサン組成物およびこれを用いた硬化物パターンの製造方法
KR100437929B1 (ko) * 1998-12-16 2004-06-30 아사히 가세이 가부시키가이샤 용융 유동성이 우수한 폴리카보네이트계 난연 수지 조성물
DE19932629A1 (de) * 1999-07-13 2001-01-18 Fraunhofer Ges Forschung Organisch modifizierte, lagerstabile, UV-härtbare, NIR-durchlässige und in Schichtdicken von 1 bis 150 mum fotostrukturierbare Kieselsäurepolykondensate, deren Herstellung und deren Verwendung
KR100881301B1 (ko) * 2001-04-09 2009-02-03 세키스이가가쿠 고교가부시키가이샤 광반응성 조성물
US6627672B1 (en) 2001-05-16 2003-09-30 Henkel Loctite Corporation UV/moisture dual cure silicone potting compound with improved depth of cure
DE10148894A1 (de) * 2001-10-04 2003-04-30 Fraunhofer Ges Forschung Photochemisch und/oder thermisch strukturierbare Harze auf Silanbasis, einstufiges Verfahren zu deren Herstellung, dabei einzetzbare Ausgangsverbindungen und Herstellungsverfahren für diese
KR100614976B1 (ko) * 2004-04-12 2006-08-25 한국과학기술원 광소자 또는 디스플레이에 이용되는 무기/유기혼성올리고머, 나노혼성고분자 및 그 제조방법
JP4517229B2 (ja) * 2004-08-03 2010-08-04 ナガセケムテックス株式会社 シルセスキオキサン含有化合物及びその製造方法
US20090029287A1 (en) * 2006-01-24 2009-01-29 Asahi Kasei Emd Corporation Photosensitive resin composition
JP4912058B2 (ja) * 2006-06-29 2012-04-04 旭化成イーマテリアルズ株式会社 ハイブリッド感光性樹脂組成物

Also Published As

Publication number Publication date
EP2133744A4 (de) 2010-06-16
KR101121936B1 (ko) 2012-03-09
WO2008123210A1 (ja) 2008-10-16
TWI375125B (de) 2012-10-21
EP2133744A1 (de) 2009-12-16
US20100104827A1 (en) 2010-04-29
TW200905400A (en) 2009-02-01
US8557498B2 (en) 2013-10-15
EP2133744B1 (de) 2011-07-13
JPWO2008123210A1 (ja) 2010-07-15
JP5144646B2 (ja) 2013-02-13
KR20100009536A (ko) 2010-01-27
CN101646978A (zh) 2010-02-10
CN101646978B (zh) 2011-11-02

Similar Documents

Publication Publication Date Title
ATE516519T1 (de) Lichtempfindliche harzzusammensetzung
EP2151715A4 (de) Lichtempfindliche klebezusammensetzung, filmartiger kleber, klebefolie, verfahren zur bildung eines klebemusters, halbleiterwafer mit klebeschicht, halbleiteranordnung und verfahren zur herstellung einer halbleiteranordnung
JP2014066711A5 (de)
BRPI0917927A2 (pt) composição adesiva fotossensível e um filme adesivo, folha adesiva, padrão de adesivo, wafer semicondutor com camada adesiva e dispositivo semicondutor que utiliza a composição adesiva fotossensível
TW200634947A (en) Cavity structure for semiconductor structure
MY142524A (en) Adhesive bonding sheet, semiconductor device using the same, and method for manufacturing such semiconductor device
WO2008123110A1 (ja) 感光性接着剤組成物、フィルム状接着剤、接着シート、接着剤パターン、接着剤層付半導体ウェハ、半導体装置、及び、半導体装置の製造方法
WO2008123224A1 (ja) 感光性樹脂組成物
EP3492982A4 (de) Lichtempfindliche harzzusammensetzung, gehärtete schicht, laminat, verfahren zur herstellung einer gehärteten schicht, verfahren zur herstellung eines laminats und halbleiterbauelement
EP1901123A4 (de) Lichtempfindliche haftzusammensetzung und deren verwendung, haftfilm, haftfolie, halbleiterwafer mit haftschicht, halbleiterbauelement und elektronisches bauteil
DE602005009373D1 (de) Härtbare organopolysiloxanzusammensetzung, härtungsverfahren dafür, halbleitervorrichtung und haftvermittler
EP4006073A4 (de) Negative lichtempfindliche harzzusammensetzung, herstellungsverfahren für polyimid, herstellungsverfahren für ein gehärtetes reliefmuster und halbleiterbauelement
DE602005013079D1 (de) Konstruktionsverfahren unter verwendung eines umkapselten klebstoffs
JP2013095809A5 (de)
AT503848A3 (de) Handhabungsvorrichtung sowie handhabungsverfahren fur wafer
MY162618A (en) Semiconductor wafer protective film
PH12018502073A1 (en) Method for manufacturing semiconductor device
TW200619843A (en) Semiconductor wafer and semiconductor device
EP4036144A4 (de) Harzzusammensetzung, film aus der harzzusammensetzung, gehärteter film, hohle struktur damit und halbleiterbauelement
EP2196850A4 (de) Positiv lichtempfindliche harzzusammensetzung, ausgehärteter film, schutzfilm, isolationsfilm und halbleiteranordnung
EP2009677A4 (de) Belichtungseinrichtung, bauelementeherstellungsverfahren und belichtungsverfahren
SG11201900617YA (en) Method for manufacturing semiconductor device
EP3859447A4 (de) Lichtempfindliche harzzusammensetzung, gehärteter film, laminat, verfahren zur herstellung des gehärteten films und halbleiterbauelement
SG11202100176VA (en) Method for manufacturing semiconductor device, heat-curable resin composition, and dicing-die attach film
TW200801816A (en) Photosensitive resin composition

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties