TW200814068A - Nonvolatile semiconductor memory and activation method thereof - Google Patents
Nonvolatile semiconductor memory and activation method thereof Download PDFInfo
- Publication number
- TW200814068A TW200814068A TW096125164A TW96125164A TW200814068A TW 200814068 A TW200814068 A TW 200814068A TW 096125164 A TW096125164 A TW 096125164A TW 96125164 A TW96125164 A TW 96125164A TW 200814068 A TW200814068 A TW 200814068A
- Authority
- TW
- Taiwan
- Prior art keywords
- source
- line
- memory cell
- semiconductor memory
- layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 82
- 238000000034 method Methods 0.000 title claims description 32
- 230000004913 activation Effects 0.000 title 1
- 238000003860 storage Methods 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 15
- 238000009413 insulation Methods 0.000 claims abstract description 4
- 238000009825 accumulation Methods 0.000 claims description 31
- 239000002784 hot electron Substances 0.000 claims description 9
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 2
- 238000004520 electroporation Methods 0.000 claims 1
- 238000002513 implantation Methods 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 abstract description 43
- 230000007423 decrease Effects 0.000 abstract description 4
- 239000011159 matrix material Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 102
- 238000004519 manufacturing process Methods 0.000 description 43
- 238000010586 diagram Methods 0.000 description 11
- 239000011229 interlayer Substances 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000003339 best practice Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/689—Vertical floating-gate IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
- H10D30/693—Vertical IGFETs having charge trapping gate insulators
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/681—Floating-gate IGFETs having only two programming levels
- H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006191470A JP5088465B2 (ja) | 2006-07-12 | 2006-07-12 | 不揮発性半導体メモリ |
| PCT/JP2007/063889 WO2008007731A1 (fr) | 2006-07-12 | 2007-07-12 | Mémoire à semiconducteur non volatile et procédé d'entraînement correspondant |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200814068A true TW200814068A (en) | 2008-03-16 |
Family
ID=38923287
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096125164A TW200814068A (en) | 2006-07-12 | 2007-07-11 | Nonvolatile semiconductor memory and activation method thereof |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7940574B2 (enExample) |
| EP (2) | EP2639825A3 (enExample) |
| JP (1) | JP5088465B2 (enExample) |
| KR (1) | KR101020846B1 (enExample) |
| CN (1) | CN101490837B (enExample) |
| TW (1) | TW200814068A (enExample) |
| WO (1) | WO2008007731A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI458080B (zh) * | 2010-07-29 | 2014-10-21 | Unisantis Elect Singapore Pte | 非揮發性半導體記憶體電晶體，及非揮發性半導體記憶體之製造方法 |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7906818B2 (en) * | 2008-03-13 | 2011-03-15 | Micron Technology, Inc. | Memory array with a pair of memory-cell strings to a single conductive pillar |
| JP5209674B2 (ja) * | 2010-07-27 | 2013-06-12 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 不揮発性半導体メモリトランジスタ、および、不揮発性半導体メモリの製造方法 |
| US9041092B2 (en) | 2012-09-07 | 2015-05-26 | Unisantis Electronics Singapore Pte. Ltd. | Semiconductor device and method for producing the same |
| KR102054181B1 (ko) | 2013-02-26 | 2019-12-10 | 삼성전자주식회사 | 수직형 메모리 장치 및 그 제조 방법 |
| JP5707003B1 (ja) * | 2013-11-07 | 2015-04-22 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． | 記憶装置、半導体装置、及び記憶装置、半導体装置の製造方法 |
| WO2018182720A1 (en) * | 2017-03-31 | 2018-10-04 | Intel Corporation | Technique for contact formation in a vertical transistor |
| CN109326604A (zh) * | 2017-08-01 | 2019-02-12 | 华邦电子股份有限公司 | 三维存储器及其操作方法 |
| JP7057032B1 (ja) * | 2020-12-25 | 2022-04-19 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体素子を用いたメモリ装置 |
| KR20230012697A (ko) * | 2021-07-16 | 2023-01-26 | 에스케이하이닉스 주식회사 | 비휘발성 메모리 장치에 데이터를 삭제하기 위한 장치 및 방법 |
| CN118368901B (zh) * | 2024-06-18 | 2024-08-30 | 杭州积海半导体有限公司 | 一种三维存储器 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3046376B2 (ja) * | 1991-03-29 | 2000-05-29 | 株式会社東芝 | 不揮発性半導体メモリ装置 |
| US5386132A (en) | 1992-11-02 | 1995-01-31 | Wong; Chun C. D. | Multimedia storage system with highly compact memory device |
| JP3743453B2 (ja) * | 1993-01-27 | 2006-02-08 | セイコーエプソン株式会社 | 不揮発性半導体記憶装置 |
| JPH06296025A (ja) * | 1993-04-08 | 1994-10-21 | Nippon Steel Corp | 不揮発性半導体メモリ装置 |
| JP3392547B2 (ja) * | 1994-11-21 | 2003-03-31 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| JPH09259591A (ja) | 1996-03-21 | 1997-10-03 | Ricoh Co Ltd | 不揮発性半導体記憶装置 |
| US5998263A (en) * | 1996-05-16 | 1999-12-07 | Altera Corporation | High-density nonvolatile memory cell |
| US5874760A (en) * | 1997-01-22 | 1999-02-23 | International Business Machines Corporation | 4F-square memory cell having vertical floating-gate transistors with self-aligned shallow trench isolation |
| JP3743189B2 (ja) * | 1999-01-27 | 2006-02-08 | 富士通株式会社 | 不揮発性半導体記憶装置及びその製造方法 |
| KR100388179B1 (ko) * | 1999-02-08 | 2003-06-19 | 가부시끼가이샤 도시바 | 불휘발성 반도체 메모리 |
| US6240016B1 (en) * | 1999-12-17 | 2001-05-29 | Advanced Micro Devices, Inc. | Method to reduce read gate disturb for flash EEPROM application |
| KR100356773B1 (ko) * | 2000-02-11 | 2002-10-18 | 삼성전자 주식회사 | 플래쉬 메모리 장치 및 그 형성 방법 |
| JP3963677B2 (ja) * | 2001-06-23 | 2007-08-22 | 富士雄 舛岡 | 半導体記憶装置の製造方法 |
| WO2003028111A1 (en) * | 2001-09-25 | 2003-04-03 | Sony Corporation | Nonvolatile semiconductor memory device and its manufacturing method |
| JP4102112B2 (ja) * | 2002-06-06 | 2008-06-18 | 株式会社東芝 | 半導体装置及びその製造方法 |
| JP2005012137A (ja) * | 2003-06-23 | 2005-01-13 | National Institute Of Advanced Industrial & Technology | 二重ゲート型不揮発性メモリ素子 |
| DE10352785A1 (de) * | 2003-11-12 | 2005-06-02 | Infineon Technologies Ag | Speichertransistor und Speichereinheit mit asymmetrischem Kanaldotierbereich |
| JP2005191489A (ja) * | 2003-12-26 | 2005-07-14 | Sharp Corp | 半導体記憶装置およびその製造方法 |
| JP2005268418A (ja) * | 2004-03-17 | 2005-09-29 | Fujio Masuoka | 半導体記憶装置及びその製造方法 |
| JP4331053B2 (ja) | 2004-05-27 | 2009-09-16 | 株式会社東芝 | 半導体記憶装置 |
| JP2005260253A (ja) * | 2005-04-04 | 2005-09-22 | Renesas Technology Corp | 半導体集積回路装置およびその製造方法 |
| US8159870B2 (en) * | 2008-04-04 | 2012-04-17 | Qualcomm Incorporated | Array structural design of magnetoresistive random access memory (MRAM) bit cells |
-
2006
- 2006-07-12 JP JP2006191470A patent/JP5088465B2/ja active Active
-
2007
- 2007-07-11 TW TW096125164A patent/TW200814068A/zh unknown
- 2007-07-12 WO PCT/JP2007/063889 patent/WO2008007731A1/ja not_active Ceased
- 2007-07-12 EP EP13170935.4A patent/EP2639825A3/en not_active Withdrawn
- 2007-07-12 CN CN2007800262290A patent/CN101490837B/zh not_active Expired - Fee Related
- 2007-07-12 EP EP07790683A patent/EP2043145A4/en not_active Ceased
- 2007-07-12 KR KR1020097000601A patent/KR101020846B1/ko not_active Expired - Fee Related
-
2009
- 2009-01-12 US US12/319,782 patent/US7940574B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI458080B (zh) * | 2010-07-29 | 2014-10-21 | Unisantis Elect Singapore Pte | 非揮發性半導體記憶體電晶體，及非揮發性半導體記憶體之製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20090129171A1 (en) | 2009-05-21 |
| CN101490837B (zh) | 2010-09-29 |
| EP2043145A1 (en) | 2009-04-01 |
| WO2008007731A1 (fr) | 2008-01-17 |
| EP2639825A3 (en) | 2013-10-16 |
| KR101020846B1 (ko) | 2011-03-09 |
| JP2008021782A (ja) | 2008-01-31 |
| EP2639825A2 (en) | 2013-09-18 |
| JP5088465B2 (ja) | 2012-12-05 |
| US7940574B2 (en) | 2011-05-10 |
| CN101490837A (zh) | 2009-07-22 |
| KR20090031416A (ko) | 2009-03-25 |
| EP2043145A4 (en) | 2010-11-10 |
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