TW200735375A - Organic thin film transistor and organic thin film luminescence transistor - Google Patents

Organic thin film transistor and organic thin film luminescence transistor

Info

Publication number
TW200735375A
TW200735375A TW096106256A TW96106256A TW200735375A TW 200735375 A TW200735375 A TW 200735375A TW 096106256 A TW096106256 A TW 096106256A TW 96106256 A TW96106256 A TW 96106256A TW 200735375 A TW200735375 A TW 200735375A
Authority
TW
Taiwan
Prior art keywords
thin film
organic thin
transistor
film transistor
luminescence
Prior art date
Application number
TW096106256A
Other languages
English (en)
Inventor
Hiroaki Nakamura
Masatoshi Saito
Tetsuo Tsutsui
Takeshi Yasuda
Original Assignee
Idemitsu Kosan Co
Kyusyu University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Idemitsu Kosan Co, Kyusyu University filed Critical Idemitsu Kosan Co
Publication of TW200735375A publication Critical patent/TW200735375A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C15/00—Cyclic hydrocarbons containing only six-membered aromatic rings as cyclic parts
    • C07C15/40—Cyclic hydrocarbons containing only six-membered aromatic rings as cyclic parts substituted by unsaturated carbon radicals
    • C07C15/50—Cyclic hydrocarbons containing only six-membered aromatic rings as cyclic parts substituted by unsaturated carbon radicals polycyclic non-condensed
    • C07C15/52—Cyclic hydrocarbons containing only six-membered aromatic rings as cyclic parts substituted by unsaturated carbon radicals polycyclic non-condensed containing a group with formula
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C22/00—Cyclic compounds containing halogen atoms bound to an acyclic carbon atom
    • C07C22/02—Cyclic compounds containing halogen atoms bound to an acyclic carbon atom having unsaturation in the rings
    • C07C22/04—Cyclic compounds containing halogen atoms bound to an acyclic carbon atom having unsaturation in the rings containing six-membered aromatic rings
    • C07C22/08—Cyclic compounds containing halogen atoms bound to an acyclic carbon atom having unsaturation in the rings containing six-membered aromatic rings containing fluorine
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C25/00—Compounds containing at least one halogen atom bound to a six-membered aromatic ring
    • C07C25/24—Halogenated aromatic hydrocarbons with unsaturated side chains
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C43/00—Ethers; Compounds having groups, groups or groups
    • C07C43/02—Ethers
    • C07C43/20—Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring
    • C07C43/215—Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring having unsaturation outside the six-membered aromatic rings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/472—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/114—Poly-phenylenevinylene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/626—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing more than one polycyclic condensed aromatic rings, e.g. bis-anthracene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/731—Liquid crystalline materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroluminescent Light Sources (AREA)
TW096106256A 2006-02-16 2007-02-16 Organic thin film transistor and organic thin film luminescence transistor TW200735375A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006039683 2006-02-16
US11/369,862 US7521710B2 (en) 2006-02-16 2006-03-08 Organic thin film transistor

Publications (1)

Publication Number Publication Date
TW200735375A true TW200735375A (en) 2007-09-16

Family

ID=38367455

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096106256A TW200735375A (en) 2006-02-16 2007-02-16 Organic thin film transistor and organic thin film luminescence transistor

Country Status (7)

Country Link
US (3) US7521710B2 (zh)
EP (1) EP2006931A4 (zh)
JP (1) JPWO2007094361A1 (zh)
KR (1) KR20080113020A (zh)
CN (1) CN101385156B (zh)
TW (1) TW200735375A (zh)
WO (1) WO2007094361A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI647867B (zh) * 2016-08-31 2019-01-11 大陸商開發晶照明（廈門）有限公司 Led金屬基板和led模組

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7615779B2 (en) * 2006-03-23 2009-11-10 Alcatel-Lucent Usa Inc. Forming electrodes to small electronic devices having self-assembled organic layers
JP5127155B2 (ja) * 2006-05-12 2013-01-23 株式会社日立製作所 配線および有機トランジスタとその製法
JP2007311677A (ja) * 2006-05-22 2007-11-29 Konica Minolta Holdings Inc 有機薄膜トランジスタの製造方法、有機薄膜トランジスタ
EP2089897A2 (en) * 2006-12-07 2009-08-19 Innovalight, Inc. Methods for creating a densified group iv semiconductor nanoparticle thin film
KR20090128476A (ko) * 2007-03-26 2009-12-15 국립대학법인 도야마 다이가쿠 박막적층체 및 이것을 이용한 유기 트랜지스터
KR100871556B1 (ko) * 2007-08-10 2008-12-01 경북대학교 산학협력단 직접 공유 전극형 유기발광트랜지스터 및 이의 제조 방법
JP5333221B2 (ja) * 2007-09-07 2013-11-06 日本電気株式会社 カーボンナノチューブ構造物及び薄膜トランジスタ
JP5363009B2 (ja) * 2008-02-29 2013-12-11 株式会社ジャパンディスプレイ 表示装置およびその製造方法
US8592805B2 (en) * 2008-04-10 2013-11-26 Idemitsu Kosan Co., Ltd. Compound for organic thin-film transistor and organic thin-film transistor using the compound
US20100090212A1 (en) * 2008-04-28 2010-04-15 Industrial Technology Research Institute Memory cell
TW200945591A (en) * 2008-04-28 2009-11-01 Ind Tech Res Inst Memory cell
EP2312637A4 (en) * 2008-07-22 2013-08-07 Dainippon Ink & Chemicals ORGANIC TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
CN104393176B (zh) * 2008-10-27 2018-03-16 密歇根大学董事会 倒置有机光敏器件
WO2010101224A1 (ja) 2009-03-06 2010-09-10 国立大学法人九州工業大学 有機半導体材料および有機薄膜トランジスタ
JPWO2011087130A1 (ja) * 2010-01-18 2013-05-20 株式会社クラレ アセチレン化合物およびそれを含有している有機半導体材料
JP5672723B2 (ja) * 2010-03-09 2015-02-18 富士通株式会社 化合物半導体装置の製造方法
US8648324B2 (en) * 2010-03-19 2014-02-11 International Business Machines Corporation Glassy carbon nanostructures
US8936965B2 (en) * 2010-11-26 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5350424B2 (ja) * 2011-03-24 2013-11-27 東京エレクトロン株式会社 表面処理方法
US9895767B2 (en) * 2011-05-10 2018-02-20 The United States Of America, As Represented By The Secretary Of The Navy Laser induced extra-planar elicitation
WO2012163464A1 (en) * 2011-06-01 2012-12-06 Merck Patent Gmbh Hybrid ambipolar tfts
KR101240781B1 (ko) 2011-06-30 2013-03-11 주식회사 탑 엔지니어링 유기 발광소자
KR101994332B1 (ko) 2012-10-30 2019-07-01 삼성디스플레이 주식회사 유기 발광 트랜지스터 및 이를 포함하는 표시 장치
CN102945807B (zh) 2012-11-15 2015-11-25 京东方科技集团股份有限公司 一种薄膜晶体管的制备方法及薄膜晶体管
TW201605646A (zh) * 2014-08-04 2016-02-16 友達光電股份有限公司 可撓性顯示面板的製造方法
EP3021373A1 (en) 2014-11-14 2016-05-18 E.T.C. S.r.l. Display containing improved pixel architectures
CN108878649B (zh) * 2017-05-08 2021-12-17 东北师范大学 自支撑超薄柔性高性能有机薄膜场效应晶体管及其制备方法
CN107425035B (zh) * 2017-05-11 2019-11-05 京东方科技集团股份有限公司 有机发光晶体管和显示面板
JP2022130244A (ja) * 2021-02-25 2022-09-06 国立大学法人 東京大学 非化学量論組成を有する化合物用封止材及びその製造方法
WO2023224434A1 (ko) * 2022-05-20 2023-11-23 서울대학교산학협력단 저전압 유기 발광 시냅스 소자 및 이를 포함하는 자극 감응형 뉴로모픽 디스플레이 장치

Family Cites Families (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5126214A (en) * 1989-03-15 1992-06-30 Idemitsu Kosan Co., Ltd. Electroluminescent element
JPH0393796A (ja) 1989-08-22 1991-04-18 Tulane Educational Fund Ｇｈｒｈ類似化合物
EP0506368B1 (en) * 1991-03-26 2002-09-04 Fujitsu Limited Organic functional thin film, fabrication and use thereof
JPH0555568A (ja) 1991-08-28 1993-03-05 Asahi Chem Ind Co Ltd 有機薄膜トランジスタ
EP1056140B1 (en) 1992-08-28 2005-07-06 Idemitsu Kosan Company Limited Charge injection auxiliary material
US5556706A (en) * 1993-10-06 1996-09-17 Matsushita Electric Industrial Co., Ltd. Conductive layered product and method of manufacturing the same
JP3428152B2 (ja) * 1994-07-13 2003-07-22 松下電器産業株式会社 有機ｅｌ素子の製造方法
US5574291A (en) 1994-12-09 1996-11-12 Lucent Technologies Inc. Article comprising a thin film transistor with low conductivity organic layer
US6278127B1 (en) 1994-12-09 2001-08-21 Agere Systems Guardian Corp. Article comprising an organic thin film transistor adapted for biasing to form a N-type or a P-type transistor
US6326640B1 (en) 1996-01-29 2001-12-04 Motorola, Inc. Organic thin film transistor with enhanced carrier mobility
KR19980032958A (ko) 1996-10-15 1998-07-25 스코트 리트만 N형 유기 반도체 화합물을 포함한 박막트랜지스터를 구비한 장치
JP4085438B2 (ja) 1996-10-17 2008-05-14 松下電器産業株式会社 有機薄膜トランジスタ及び液晶素子と有機発光素子
US6107117A (en) 1996-12-20 2000-08-22 Lucent Technologies Inc. Method of making an organic thin film transistor
US6224787B1 (en) * 1997-03-10 2001-05-01 Dai Nippon Printing Co., Ltd. Liquid crystalline charge transport material
JPH11133205A (ja) 1997-04-21 1999-05-21 Sekisui Chem Co Ltd 反射防止膜の製造方法
JP3594069B2 (ja) 1997-07-17 2004-11-24 日本ペイント株式会社 貴金属又は銅の固体ゾル及び製造方法並びに塗料組成物及び樹脂成型物
JP3594803B2 (ja) 1997-07-17 2004-12-02 日本ペイント株式会社 貴金属又は銅のコロイド溶液及びその製造方法並びに塗料組成物及び樹脂成型物
JPH1161406A (ja) 1997-08-27 1999-03-05 Sekisui Chem Co Ltd 反射・帯電防止膜の製造方法
TW399338B (en) 1997-11-24 2000-07-21 Lucent Technologies Inc Method of making an organic thin film transistor and article made by the method
JPH11204266A (ja) 1998-01-08 1999-07-30 Mitsubishi Electric Corp 有機エレクトロルミネッセンス素子
JPH11251067A (ja) * 1998-03-02 1999-09-17 Junji Kido 有機エレクトロルミネッセント素子
JPH11319538A (ja) 1998-05-20 1999-11-24 Nippon Paint Co Ltd 貴金属又は銅のコロイドの製造方法
JP2000124157A (ja) 1998-08-10 2000-04-28 Vacuum Metallurgical Co Ltd Ｃｕ薄膜の形成法
JP4362173B2 (ja) 1998-08-10 2009-11-11 アルバックマテリアル株式会社 Ｃｕ超微粒子独立分散液
JP2000147209A (ja) 1998-09-09 2000-05-26 Sekisui Chem Co Ltd 反射防止フィルム及びその製造方法
JP2000121804A (ja) 1998-10-09 2000-04-28 Sekisui Chem Co Ltd 反射防止フィルム
JP2000174277A (ja) 1998-12-01 2000-06-23 Hitachi Ltd 薄膜トランジスタおよびその製造方法
JP2000185362A (ja) 1998-12-24 2000-07-04 Sekisui Chem Co Ltd 金属元素含有薄膜積層体の製造方法
JP3310234B2 (ja) 1999-02-25 2002-08-05 シャープ株式会社 反射型液晶表示装置用反射板の製造方法
JP4362170B2 (ja) 1999-07-22 2009-11-11 アルバックマテリアル株式会社 銀超微粒子独立分散液
TW463520B (en) * 1999-07-30 2001-11-11 Sony Corp Organic electroluminescent device
JP2001053028A (ja) 1999-08-11 2001-02-23 Vacuum Metallurgical Co Ltd Ｃｕ薄膜の形成法
JP2001094107A (ja) 1999-09-20 2001-04-06 Hitachi Ltd 有機半導体装置及び液晶表示装置
JP2001254185A (ja) 2000-03-13 2001-09-18 Vacuum Metallurgical Co Ltd 導電性金属薄膜の形成方法およびその方法に使用する導電性金属超微粒子分散物
US6733904B2 (en) * 2000-07-17 2004-05-11 National Research Council Of Canada Use of oligo(phenylenevinylene)s in organic light-emitting devices
US6884093B2 (en) * 2000-10-03 2005-04-26 The Trustees Of Princeton University Organic triodes with novel grid structures and method of production
US6777532B2 (en) * 2001-03-13 2004-08-17 The Ohio State University Polymers and oligomers, their synthesis, and electronic devices incorporating same
US6995312B2 (en) 2001-03-29 2006-02-07 Hewlett-Packard Development Company, L.P. Bistable molecular switches and associated methods
JP2003187983A (ja) * 2001-12-17 2003-07-04 Ricoh Co Ltd 有機ｅｌトランジスタ
CN100459164C (zh) * 2002-02-08 2009-02-04 大日本印刷株式会社 有机半导体结构物、其制造方法和有机半导体装置
JP4271469B2 (ja) 2002-04-08 2009-06-03 日本化学工業株式会社 長い直線的共役系構造部分を持つ液晶分子を用いた電荷輸送方法及び電荷輸送素子
TW200305636A (en) 2002-04-18 2003-11-01 Merck Patent Gmbh Polymerisable compounds comprising a cinnamic acid group and an acetylene group
JP2004214482A (ja) 2003-01-07 2004-07-29 Konica Minolta Holdings Inc 有機半導体材料および有機薄膜トランジスタ
EP1609195B9 (en) * 2003-03-28 2011-08-31 Michele Muccini Organic electroluminescence devices
JP4323851B2 (ja) * 2003-04-10 2009-09-02 キヤノン株式会社 有機半導体素子
JP2005089318A (ja) 2003-09-12 2005-04-07 Mitsubishi Chemicals Corp フェニレンエチニレン類及びそれを含有してなるナノ粒子組成物
JP4795634B2 (ja) * 2003-10-31 2011-10-19 出光興産株式会社 有機薄膜トランジスタ
JP2005278607A (ja) * 2004-03-29 2005-10-13 Miyoko Ichikawa にんにくエキス精製品の製造方法とその精製加工品
JP4867135B2 (ja) * 2004-03-31 2012-02-01 大日本印刷株式会社 有機半導体構造物の製造方法
JP2006080056A (ja) * 2004-07-30 2006-03-23 Sharp Corp 両末端に脱離反応性の異なる異種官能基を有する有機化合物を用いた有機薄膜および該有機薄膜の製造方法
JP4972730B2 (ja) * 2004-08-30 2012-07-11 国立大学法人京都大学 有機半導体発光装置およびそれを用いた表示装置
US20060105199A1 (en) * 2004-11-18 2006-05-18 3M Innovative Properties Company Electroluminescent devices containing trans-1,2-bis(acenyl)ethylene compounds
US7315042B2 (en) * 2004-11-18 2008-01-01 3M Innovative Properties Company Semiconductors containing trans-1,2-bis(acenyl)ethylene compounds
DE202005009955U1 (de) * 2005-06-24 2005-09-22 Schön, Hendrik Farbveränderliche Lichtquelle

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI647867B (zh) * 2016-08-31 2019-01-11 大陸商開發晶照明（廈門）有限公司 Led金屬基板和led模組

Also Published As

Publication number Publication date
EP2006931A4 (en) 2010-12-22
US7521710B2 (en) 2009-04-21
EP2006931A2 (en) 2008-12-24
US20070187674A1 (en) 2007-08-16
US8445894B2 (en) 2013-05-21
US20090159878A1 (en) 2009-06-25
CN101385156B (zh) 2010-10-06
CN101385156A (zh) 2009-03-11
US20090140240A1 (en) 2009-06-04
KR20080113020A (ko) 2008-12-26
JPWO2007094361A1 (ja) 2009-07-09
EP2006931A9 (en) 2009-07-08
WO2007094361A1 (ja) 2007-08-23

Similar Documents

Publication Publication Date Title
TW200735375A (en) Organic thin film transistor and organic thin film luminescence transistor
WO2009041254A1 (ja) 有機薄膜トランジスタ
WO2009028460A1 (ja) ベンゾジチオフェン誘導体並びにそれを用いた有機薄膜トランジスタ及び有機薄膜発光トランジスタ
WO2009028660A1 (ja) 有機薄膜トランジスタ及び有機薄膜発光トランジスタ
Zschieschang et al. Dinaphtho [2, 3-b: 2′, 3′-f] thieno [3, 2-b] thiophene (DNTT) thin-film transistors with improved performance and stability
US9698172B2 (en) TFT substrate structure
Ersman et al. Fast-switching all-printed organic electrochemical transistors
TW200419810A (en) Structure of thin-film transistor, and the manufacturing method thereof
Zschieschang et al. Low-voltage organic transistors with steep subthreshold slope fabricated on commercially available paper
TW200603674A (en) Organic semiconductor element and organic EL display device using the same
TW200802883A (en) Tunneling-effect thin film transistor, method of manufacturing the same, and organic light-emitting diode display using the same
WO2009044614A1 (ja) 有機半導体装置
ATE370926T1 (de) Bis(2-acenyl)acetylen- halbleiter
TW200730013A (en) Organic light emitting display and method of fabricating the same
WO2006033919A3 (en) Providing driving current arrangement for oled device
EP1852923A3 (en) Photosensing transistors
JP2011146574A5 (ja) トランジスタの駆動方法及び該方法で駆動されるトランジスタを含む表示装置
EP2112694A3 (en) Organic light emitting display device and method of manufacturing the same
WO2009060731A1 (ja) 有機薄膜トランジスタの製造方法及び有機薄膜トランジスタ
WO2008156121A1 (ja) 有機薄膜トランジスタ及び有機薄膜発光トランジスタ
TW200718278A (en) Organic electroluminescence display device
EP2117048A3 (en) Thin film transistor, method of fabricating the same and organic light emitting diode display device having the same
JP2007179042A5 (zh)
WO2013126698A3 (en) Flexible high-voltage thin film transistors
WO2008117362A1 (ja) 有機トランジスタ及びその製造方法