WO2009060731A1 - 有機薄膜トランジスタの製造方法及び有機薄膜トランジスタ - Google Patents

有機薄膜トランジスタの製造方法及び有機薄膜トランジスタ Download PDF

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Publication number
WO2009060731A1
WO2009060731A1 PCT/JP2008/069332 JP2008069332W WO2009060731A1 WO 2009060731 A1 WO2009060731 A1 WO 2009060731A1 JP 2008069332 W JP2008069332 W JP 2008069332W WO 2009060731 A1 WO2009060731 A1 WO 2009060731A1
Authority
WO
WIPO (PCT)
Prior art keywords
thin film
film transistor
organic thin
manufacturing
organic
Prior art date
Application number
PCT/JP2008/069332
Other languages
English (en)
French (fr)
Inventor
Takayoshi Kambara
Hirofumi Kondo
Hiroaki Nakamura
Masatoshi Saito
Original Assignee
Idemitsu Kosan Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Idemitsu Kosan Co., Ltd. filed Critical Idemitsu Kosan Co., Ltd.
Publication of WO2009060731A1 publication Critical patent/WO2009060731A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H01L21/0212—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials

Abstract

　少なくとも基板上にゲート電極、ソース電極及びドレイン電極の３端子、絶縁体層並びに有機半導体層が設けられ、ソース－ドレイン間電流をゲート電極に電圧を印加することによって制御する有機薄膜トランジスタを作製する方法であって、該絶縁体層の形成工程がフッ素ポリマーの気相成膜を含むことを特徴とする有機薄膜トランジスタの製造方法及び該方法で製造されてなる有機薄膜トランジスタにより、移動度及びオン／オフ比が高い有機薄膜トランジスタ（有機ＴＦＴ）を提供する。
PCT/JP2008/069332 2007-11-06 2008-10-24 有機薄膜トランジスタの製造方法及び有機薄膜トランジスタ WO2009060731A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007289017A JP2009117619A (ja) 2007-11-06 2007-11-06 有機薄膜トランジスタの製造方法及び有機薄膜トランジスタ
JP2007-289017 2007-11-06

Publications (1)

Publication Number Publication Date
WO2009060731A1 true WO2009060731A1 (ja) 2009-05-14

Family

ID=40625629

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/069332 WO2009060731A1 (ja) 2007-11-06 2008-10-24 有機薄膜トランジスタの製造方法及び有機薄膜トランジスタ

Country Status (3)

Country Link
JP (1) JP2009117619A (ja)
TW (1) TW200931699A (ja)
WO (1) WO2009060731A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112652718A (zh) * 2020-12-11 2021-04-13 华南理工大学 一种提高全有机薄膜晶体管器件迁移率的方法

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JP2516688B2 (ja) * 1989-08-02 1996-07-24 シャープ株式会社 液晶表示装置
CN102598279B (zh) * 2009-11-06 2015-10-07 株式会社半导体能源研究所 半导体装置
CN104465318B (zh) 2009-11-06 2018-04-24 株式会社半导体能源研究所 制造半导体器件的方法
KR101773641B1 (ko) * 2010-01-22 2017-09-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9368737B2 (en) * 2010-10-07 2016-06-14 Georgia Tech Research Corporation Multi-layer gate dielectric field-effect transistor and manufacturing process thereof
TWI476931B (zh) * 2010-10-21 2015-03-11 Au Optronics Corp 薄膜電晶體與具有此薄膜電晶體的畫素結構
KR101813179B1 (ko) * 2011-06-10 2017-12-29 삼성전자주식회사 복층의 게이트 절연층을 구비한 그래핀 전자 소자
JP5598928B2 (ja) * 2011-11-18 2014-10-01 独立行政法人科学技術振興機構 薄膜トランジスタ及び薄膜トランジスタの製造方法
KR101577989B1 (ko) * 2014-10-17 2015-12-17 재단법인 나노기반소프트일렉트로닉스연구단 유리전이온도를 갖는 저분자 물질을 포함하는 적층체 및 그의 제조방법

Citations (8)

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JPH011971A (ja) * 1987-06-24 1989-01-06 日本電気株式会社 電池容量警報装置
JPH09232589A (ja) * 1996-01-29 1997-09-05 Motorola Inc 有機薄膜トランジスタ
JP2000150904A (ja) * 1998-08-21 2000-05-30 Semiconductor Energy Lab Co Ltd 半導体素子からなる半導体回路を備えた半導体装置およびその作製方法
WO2004075279A1 (ja) * 2003-02-18 2004-09-02 Konica Minolta Holdings, Inc. 有機薄膜トランジスタ素子及びその製造方法
JP2005165304A (ja) * 2003-11-14 2005-06-23 Semiconductor Energy Lab Co Ltd 液晶表示装置および液晶表示装置の作製方法
JP2006013468A (ja) * 2004-06-24 2006-01-12 Samsung Sdi Co Ltd 有機薄膜トランジスタ及びその製造方法
JP2007242665A (ja) * 2006-03-06 2007-09-20 Optrex Corp 含フッ素芳香族化合物を含む有機薄膜デバイス
JP2008186885A (ja) * 2007-01-29 2008-08-14 Sony Corp 薄膜半導体装置の製造方法および薄膜半導体装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2518291B2 (ja) * 1987-06-24 1996-07-24 日本電気株式会社 電池容量警報装置
JP3992203B2 (ja) * 1997-06-13 2007-10-17 住友化学株式会社 配向分子薄膜

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH011971A (ja) * 1987-06-24 1989-01-06 日本電気株式会社 電池容量警報装置
JPH09232589A (ja) * 1996-01-29 1997-09-05 Motorola Inc 有機薄膜トランジスタ
JP2000150904A (ja) * 1998-08-21 2000-05-30 Semiconductor Energy Lab Co Ltd 半導体素子からなる半導体回路を備えた半導体装置およびその作製方法
WO2004075279A1 (ja) * 2003-02-18 2004-09-02 Konica Minolta Holdings, Inc. 有機薄膜トランジスタ素子及びその製造方法
JP2005165304A (ja) * 2003-11-14 2005-06-23 Semiconductor Energy Lab Co Ltd 液晶表示装置および液晶表示装置の作製方法
JP2006013468A (ja) * 2004-06-24 2006-01-12 Samsung Sdi Co Ltd 有機薄膜トランジスタ及びその製造方法
JP2007242665A (ja) * 2006-03-06 2007-09-20 Optrex Corp 含フッ素芳香族化合物を含む有機薄膜デバイス
JP2008186885A (ja) * 2007-01-29 2008-08-14 Sony Corp 薄膜半導体装置の製造方法および薄膜半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112652718A (zh) * 2020-12-11 2021-04-13 华南理工大学 一种提高全有机薄膜晶体管器件迁移率的方法

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Publication number Publication date
TW200931699A (en) 2009-07-16
JP2009117619A (ja) 2009-05-28

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