WO2009044614A1 - 有機半導体装置 - Google Patents

有機半導体装置 Download PDF

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Publication number
WO2009044614A1
WO2009044614A1 PCT/JP2008/066517 JP2008066517W WO2009044614A1 WO 2009044614 A1 WO2009044614 A1 WO 2009044614A1 JP 2008066517 W JP2008066517 W JP 2008066517W WO 2009044614 A1 WO2009044614 A1 WO 2009044614A1
Authority
WO
WIPO (PCT)
Prior art keywords
insulating film
gate insulating
organic semiconductor
semiconductor device
gate
Prior art date
Application number
PCT/JP2008/066517
Other languages
English (en)
French (fr)
Inventor
Yoshiaki Oku
Original Assignee
Rohm Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co., Ltd. filed Critical Rohm Co., Ltd.
Priority to CN2008801187465A priority Critical patent/CN101884108B/zh
Priority to JP2009536004A priority patent/JPWO2009044614A1/ja
Priority to US12/681,028 priority patent/US20100301311A1/en
Publication of WO2009044614A1 publication Critical patent/WO2009044614A1/ja

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate

Abstract

　低電圧駆動，高駆動電流の有機薄膜トランジスタを有する集積化に適した有機半導体装置を提供する。 　基板（１０）と、基板（１０）上に配置されたゲート電極（１２）と、ゲート電極（１２）上に配置された 　第１ゲート絶縁膜（１５）と、第１ゲート絶縁膜（１５）上に配置された第２ゲート絶縁膜（１７）と、第２ゲート絶縁膜（１７）上に配置され,第１金属層（１６,１８）と第２金属層（２０,２２）の積層構造からなるソース電極（１６,２０）およびドレイン電極（１８,２２）と、ソース電極（１６,２０）とドレイン電極（１８,２２）間であってゲート絶縁膜（１７）上に配置された有機半導体層（２４）とを備える有機薄膜トランジスタを備え、第１ゲート絶縁膜（１５）は第２ゲート絶縁膜（１７）よりも高誘電率の絶縁膜で構成され、第２ゲート絶縁膜（１７）は第１ゲート絶縁膜（１５）よりも薄いシリコン酸化膜で構成されて,全体として積層型ゲート絶縁膜構造を有する。
PCT/JP2008/066517 2007-10-01 2008-09-12 有機半導体装置 WO2009044614A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2008801187465A CN101884108B (zh) 2007-10-01 2008-09-12 有机半导体装置
JP2009536004A JPWO2009044614A1 (ja) 2007-10-01 2008-09-12 有機半導体装置
US12/681,028 US20100301311A1 (en) 2007-10-01 2008-09-12 Organic Semiconductor Device

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007257724 2007-10-01
JP2007257729 2007-10-01
JP2007-257729 2007-10-01
JP2007-257724 2007-10-01

Publications (1)

Publication Number Publication Date
WO2009044614A1 true WO2009044614A1 (ja) 2009-04-09

Family

ID=40526042

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/066517 WO2009044614A1 (ja) 2007-10-01 2008-09-12 有機半導体装置

Country Status (5)

Country Link
US (1) US20100301311A1 (ja)
JP (1) JPWO2009044614A1 (ja)
CN (1) CN101884108B (ja)
TW (1) TW200921961A (ja)
WO (1) WO2009044614A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010141141A (ja) * 2008-12-11 2010-06-24 Nippon Hoso Kyokai <Nhk> 薄膜トランジスタおよびその製造方法、並びに表示装置
JP2011165778A (ja) * 2010-02-08 2011-08-25 Nippon Hoso Kyokai <Nhk> ｐ型有機薄膜トランジスタ、ｐ型有機薄膜トランジスタの製造方法、および、塗布溶液
KR101931409B1 (ko) 2012-08-25 2018-12-20 플렉스테라, 인크. 개선된 성능을 갖는 발광 트랜지스터
JP2020521326A (ja) * 2017-05-23 2020-07-16 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ 半導体デバイスおよび半導体デバイス形成方法

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011052437A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
KR101093148B1 (ko) * 2009-12-29 2011-12-12 주식회사 하이닉스반도체 반도체 장치 및 그 제조방법
TWI460873B (zh) * 2010-07-23 2014-11-11 Univ Nat Chiao Tung 光電晶體
CN102169960B (zh) * 2011-03-16 2013-03-20 华中科技大学 一种柔性电子器件薄膜晶体管的制备方法
US9299956B2 (en) * 2012-06-13 2016-03-29 Aixtron, Inc. Method for deposition of high-performance coatings and encapsulated electronic devices
EP3396729B1 (en) 2014-05-28 2019-10-09 Alliance for Sustainable Energy, LLC Methods for producing and using perovskite materials and devices therefrom
US9701696B2 (en) 2015-02-27 2017-07-11 Alliance For Sustainable Energy, Llc Methods for producing single crystal mixed halide perovskites
CN105098076B (zh) * 2015-06-16 2018-03-09 京东方科技集团股份有限公司 薄膜晶体管及其制作方法、阵列基板、显示装置
CN105549278B (zh) * 2016-01-11 2018-03-06 深圳市华星光电技术有限公司 Ips型tft‑lcd阵列基板的制作方法及ips型tft‑lcd阵列基板
CN105514032A (zh) * 2016-01-11 2016-04-20 深圳市华星光电技术有限公司 Ips型tft-lcd阵列基板的制作方法及ips型tft-lcd阵列基板
GB2573323A (en) * 2018-05-03 2019-11-06 Mursia Ltd Biosensor method and system
CN112034014A (zh) * 2020-08-21 2020-12-04 山东大学 基于非共价单原子层石墨烯的电子氨气传感器的制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005327793A (ja) * 2004-05-12 2005-11-24 Matsushita Electric Ind Co Ltd 有機電界効果トランジスタおよびその製造方法
JP2007071928A (ja) * 2005-09-05 2007-03-22 Hitachi Ltd 液晶表示装置
JP2007165834A (ja) * 2005-12-09 2007-06-28 Samsung Sdi Co Ltd 有機薄膜トランジスタ及びそれを含む平板ディスプレイ装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003255857A (ja) * 2002-02-28 2003-09-10 Nippon Hoso Kyokai <Nhk> 有機ｅｌディスプレイ
KR100615237B1 (ko) * 2004-08-07 2006-08-25 삼성에스디아이 주식회사 박막 트랜지스터 및 그의 제조방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005327793A (ja) * 2004-05-12 2005-11-24 Matsushita Electric Ind Co Ltd 有機電界効果トランジスタおよびその製造方法
JP2007071928A (ja) * 2005-09-05 2007-03-22 Hitachi Ltd 液晶表示装置
JP2007165834A (ja) * 2005-12-09 2007-06-28 Samsung Sdi Co Ltd 有機薄膜トランジスタ及びそれを含む平板ディスプレイ装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010141141A (ja) * 2008-12-11 2010-06-24 Nippon Hoso Kyokai <Nhk> 薄膜トランジスタおよびその製造方法、並びに表示装置
JP2011165778A (ja) * 2010-02-08 2011-08-25 Nippon Hoso Kyokai <Nhk> ｐ型有機薄膜トランジスタ、ｐ型有機薄膜トランジスタの製造方法、および、塗布溶液
KR101931409B1 (ko) 2012-08-25 2018-12-20 플렉스테라, 인크. 개선된 성능을 갖는 발광 트랜지스터
JP2020521326A (ja) * 2017-05-23 2020-07-16 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ 半導体デバイスおよび半導体デバイス形成方法
JP7143328B2 (ja) 2017-05-23 2022-09-28 インターナショナル・ビジネス・マシーンズ・コーポレーション 半導体デバイスおよび半導体デバイス形成方法

Also Published As

Publication number Publication date
TW200921961A (en) 2009-05-16
US20100301311A1 (en) 2010-12-02
CN101884108A (zh) 2010-11-10
JPWO2009044614A1 (ja) 2011-02-03
CN101884108B (zh) 2012-09-19

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