TW200732863A - Detergent for lithography and method of forming resist pattern with the same - Google Patents

Detergent for lithography and method of forming resist pattern with the same

Info

Publication number
TW200732863A
TW200732863A TW095146029A TW95146029A TW200732863A TW 200732863 A TW200732863 A TW 200732863A TW 095146029 A TW095146029 A TW 095146029A TW 95146029 A TW95146029 A TW 95146029A TW 200732863 A TW200732863 A TW 200732863A
Authority
TW
Taiwan
Prior art keywords
lithography
detergent
surfactant
resist pattern
inhibit
Prior art date
Application number
TW095146029A
Other languages
English (en)
Other versions
TWI357539B (zh
Inventor
Yoshihiro Sawada
Kazumasa Wakiya
Jun Koshiyama
Hidekazu Tajima
Atsushi Miyamoto
Tomoya Kumagai
Atsushi Sawano
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200732863A publication Critical patent/TW200732863A/zh
Application granted granted Critical
Publication of TWI357539B publication Critical patent/TWI357539B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/38—Cationic compounds
    • C11D1/40—Monoamines or polyamines; Salts thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/02—Anionic compounds
    • C11D1/04—Carboxylic acids or salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/02—Anionic compounds
    • C11D1/12—Sulfonic acids or sulfuric acid esters; Salts thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Atmospheric Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Detergent Compositions (AREA)
TW095146029A 2006-01-11 2006-12-08 Detergent for lithography and method of forming resist pattern with the same TW200732863A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006004093 2006-01-11

Publications (2)

Publication Number Publication Date
TW200732863A true TW200732863A (en) 2007-09-01
TWI357539B TWI357539B (zh) 2012-02-01

Family

ID=38256138

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095146029A TW200732863A (en) 2006-01-11 2006-12-08 Detergent for lithography and method of forming resist pattern with the same

Country Status (4)

Country Link
US (1) US8367312B2 (zh)
KR (1) KR20080069252A (zh)
TW (1) TW200732863A (zh)
WO (1) WO2007080726A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI502064B (zh) * 2009-03-31 2015-10-01 Tokyo Ohka Kogyo Co Ltd A microfilm cleaning solution and a method of forming a photoresist pattern using the cleaning solution

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5064952B2 (ja) * 2006-09-29 2012-10-31 富士フイルム株式会社 平版印刷版用現像処理液及び平版印刷版の製版方法
JP4784760B2 (ja) * 2006-10-20 2011-10-05 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP5152851B2 (ja) * 2008-04-17 2013-02-27 国立大学法人東北大学 半導体装置の製造方法
US8168367B2 (en) 2008-07-11 2012-05-01 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
JP2012516380A (ja) 2009-01-28 2012-07-19 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド リソグラフツールの原位置（ｉｎｓｉｔｕ）清浄化用配合物
JP5206622B2 (ja) 2009-08-07 2013-06-12 三菱瓦斯化学株式会社 金属微細構造体のパターン倒壊抑制用処理液及びこれを用いた金属微細構造体の製造方法
US9334161B2 (en) * 2009-10-02 2016-05-10 Mitsubishi Gas Chemical Company, Inc. Processing liquid for suppressing pattern collapse of fine metal structure and method for producing fine metal structure using same
JP5708071B2 (ja) * 2011-03-11 2015-04-30 富士通株式会社 レジストパターン改善化材料、レジストパターンの形成方法、及び半導体装置の製造方法
US9184057B2 (en) 2011-03-18 2015-11-10 Basf Se Method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices having patterned material layers with line-space dimensions of 50 nm and less
JP6123334B2 (ja) 2012-02-17 2017-05-10 三菱化学株式会社 半導体デバイス用洗浄液及び半導体デバイス用基板の洗浄方法
JP6106990B2 (ja) * 2012-08-27 2017-04-05 富士通株式会社 リソグラフィ用リンス剤、レジストパターンの形成方法、及び半導体装置の製造方法
MY181266A (en) 2012-12-14 2020-12-21 Basf Se Use of compositions comprising a surfactant and a hydrophobizer for avoiding anti pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below
JPWO2015163305A1 (ja) * 2014-04-22 2017-04-20 シャープ株式会社 アクティブマトリクス基板、及びそれを備えた表示装置
JP6873100B2 (ja) * 2015-07-16 2021-05-19 ビーエイエスエフ・ソシエタス・エウロパエアＢａｓｆ Ｓｅ スルホエステルのアンモニウム塩を含有する、欠陥を低減させるすすぎ液
JP6954738B2 (ja) * 2016-12-14 2021-10-27 東京応化工業株式会社 親水化処理方法、及び表面処理液のセット
KR102011879B1 (ko) * 2018-12-28 2019-08-20 영창케미칼 주식회사 극자외선 리소그래피용 공정액 및 이를 사용한 패턴 형성 방법

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5326672A (en) * 1992-04-23 1994-07-05 Sortec Corporation Resist patterns and method of forming resist patterns
JPH06105683B2 (ja) 1992-04-23 1994-12-21 株式会社ソルテック レジストパターン形成方法
JP4027494B2 (ja) * 1998-04-07 2007-12-26 花王株式会社 リンス剤組成物
US20040029395A1 (en) * 2002-08-12 2004-02-12 Peng Zhang Process solutions containing acetylenic diol surfactants
US7521405B2 (en) 2002-08-12 2009-04-21 Air Products And Chemicals, Inc. Process solutions containing surfactants
JP2001023893A (ja) 1999-07-12 2001-01-26 Nec Corp フォトレジストパターンの形成方法
JP3868686B2 (ja) 1999-12-03 2007-01-17 東京応化工業株式会社 ディフェクトの発生を抑えたホトレジストパターンの形成方法およびディフェクト低減用現像液
TW558736B (en) 2000-02-26 2003-10-21 Shipley Co Llc Method of reducing defects
JP4694686B2 (ja) * 2000-08-31 2011-06-08 東京応化工業株式会社 半導体素子製造方法
US6451510B1 (en) * 2001-02-21 2002-09-17 International Business Machines Corporation Developer/rinse formulation to prevent image collapse in resist
JP2002323774A (ja) 2001-04-25 2002-11-08 Tokyo Ohka Kogyo Co Ltd 化学増幅型レジストパターンディフェクト低減用処理剤及びそれを用いるレジストパターン形成方法
JP2003178944A (ja) 2001-12-10 2003-06-27 Tokyo Electron Ltd 現像処理方法及び現像処理装置
JP2003178943A (ja) 2001-12-10 2003-06-27 Tokyo Electron Ltd 現像処理方法及び現像処理装置
JP4045180B2 (ja) * 2002-12-03 2008-02-13 Ａｚエレクトロニックマテリアルズ株式会社 リソグラフィー用リンス液およびそれを用いたレジストパターン形成方法
JP4522408B2 (ja) * 2003-08-19 2010-08-11 マリンクロッド・ベイカー・インコーポレイテッド マイクロエレクトロニクス用のストリッピングおよび洗浄組成物
WO2005076332A1 (ja) * 2004-02-09 2005-08-18 Mitsubishi Chemical Corporation 半導体デバイス用基板洗浄液及び洗浄方法
JP2005336470A (ja) * 2004-04-30 2005-12-08 Sanyo Chem Ind Ltd アルカリ洗浄剤
KR100617855B1 (ko) * 2004-04-30 2006-08-28 산요가세이고교 가부시키가이샤 알칼리 세정제

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI502064B (zh) * 2009-03-31 2015-10-01 Tokyo Ohka Kogyo Co Ltd A microfilm cleaning solution and a method of forming a photoresist pattern using the cleaning solution

Also Published As

Publication number Publication date
US20090004608A1 (en) 2009-01-01
US8367312B2 (en) 2013-02-05
WO2007080726A1 (ja) 2007-07-19
KR20080069252A (ko) 2008-07-25
TWI357539B (zh) 2012-02-01

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