TW200729347A - Semiconductor chip having island dispersion structure and method for manufacturing the same - Google Patents

Semiconductor chip having island dispersion structure and method for manufacturing the same

Info

Publication number
TW200729347A
TW200729347A TW095144130A TW95144130A TW200729347A TW 200729347 A TW200729347 A TW 200729347A TW 095144130 A TW095144130 A TW 095144130A TW 95144130 A TW95144130 A TW 95144130A TW 200729347 A TW200729347 A TW 200729347A
Authority
TW
Taiwan
Prior art keywords
semiconductor
semiconductor chip
manufacturing
same
silicon substrate
Prior art date
Application number
TW095144130A
Other languages
English (en)
Inventor
Kiyonori Oyu
Shigeru Aoki
Original Assignee
Elpida Memory Inc
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Elpida Memory Inc, Hitachi Ltd filed Critical Elpida Memory Inc
Publication of TW200729347A publication Critical patent/TW200729347A/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/562Protection against mechanical damage
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604Chemical etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308Chemical or electrical treatment, e.g. electrolytic etching using masks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/16Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/26Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device including materials for absorbing or reacting with moisture or other undesired substances, e.g. getters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Weting (AREA)
  • Element Separation (AREA)
  • Thin Film Transistor (AREA)
TW095144130A 2005-11-30 2006-11-29 Semiconductor chip having island dispersion structure and method for manufacturing the same TW200729347A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005345056A JP4677331B2 (ja) 2005-11-30 2005-11-30 島状の分散構造を備えた半導体チップおよびその製造方法

Publications (1)

Publication Number Publication Date
TW200729347A true TW200729347A (en) 2007-08-01

Family

ID=38086649

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095144130A TW200729347A (en) 2005-11-30 2006-11-29 Semiconductor chip having island dispersion structure and method for manufacturing the same

Country Status (5)

Country Link
US (2) US7911058B2 (zh)
JP (1) JP4677331B2 (zh)
KR (1) KR100899905B1 (zh)
CN (1) CN100517658C (zh)
TW (1) TW200729347A (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6098323B2 (ja) * 2013-04-17 2017-03-22 富士電機株式会社 半導体装置の製造方法
US10700012B2 (en) * 2017-04-14 2020-06-30 Qualcomm Incorporated Porous silicon dicing
CN107132472B (zh) * 2017-05-23 2020-06-09 北京智芯微电子科技有限公司 一种用于分析深亚微米级soi工艺芯片的腐蚀溶液及方法
US10586751B2 (en) * 2017-08-03 2020-03-10 Advanced Semiconductor Engineering, Inc. Semiconductor package device and method of manufacturing the same
CN111699551B (zh) * 2019-01-15 2023-10-17 深圳市汇顶科技股份有限公司 芯片及芯片的制造方法
GB201917988D0 (en) * 2019-12-09 2020-01-22 Spts Technologies Ltd A semiconductor wafer dicing process

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JPH03250721A (ja) 1990-02-28 1991-11-08 Elna Co Ltd 電解コンデンサ装置
JPH071908B2 (ja) 1991-01-28 1995-01-11 富士ゼロックス株式会社 データ通信装置
JPH04290038A (ja) 1991-03-19 1992-10-14 Oki Electric Ind Co Ltd Isdn一次群レイトインタフェースにおけるs点延長装置
JPH0743101B2 (ja) 1991-06-19 1995-05-15 株式会社タクマ ごみ焼却炉のストーカクリンカ防止装置
JPH08213292A (ja) 1995-02-02 1996-08-20 Hitachi Ltd 半導体基板及びその製造方法
JP3250721B2 (ja) 1995-12-12 2002-01-28 キヤノン株式会社 Soi基板の製造方法
TW420827B (en) 1996-12-05 2001-02-01 Canon Kk Fabrication process of SOI substrate
US6248664B1 (en) 1997-05-19 2001-06-19 Semiconductor Components Industries Llc Method of forming a contact
JP2000353797A (ja) * 1999-06-11 2000-12-19 Mitsubishi Electric Corp 半導体ウエハおよびその製造方法
JP4347960B2 (ja) 1999-09-14 2009-10-21 株式会社ディスコ ダイシング方法
JP2001358154A (ja) * 2000-06-16 2001-12-26 Toshiba Corp 半導体装置の製造方法
KR100405194B1 (ko) 2000-11-30 2003-11-10 텔레포스 주식회사 다공성 산화 실리콘층의 선택적 형성 방법, 이를 이용한 멀티칩 패키지 및 반도체 기판
WO2002045146A1 (en) 2000-11-30 2002-06-06 Telephus, Inc. Fabrication method of selectively oxidized porous silicon (sops) layer and multi-chip package using the same
JP2002344012A (ja) * 2001-05-17 2002-11-29 Matsushita Electric Ind Co Ltd 多孔性シリコン基板及びそれを用いた発光素子並びに多孔性シリコン基板の製造方法
US20020197836A1 (en) * 2001-06-11 2002-12-26 International Business Machines Corporation Method of forming variable oxide thicknesses across semiconductor chips
WO2003046993A1 (fr) * 2001-11-29 2003-06-05 Shin-Etsu Handotai Co.,Ltd. Procede de production de plaquettes soi
JP4337353B2 (ja) 2002-03-25 2009-09-30 セイコーエプソン株式会社 フリッカ検出装置、フリッカ補正装置、撮像装置、フリッカ検出プログラムおよびフリッカ補正プログラム
KR100476901B1 (ko) 2002-05-22 2005-03-17 삼성전자주식회사 소이 반도체기판의 형성방법
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JP2004266071A (ja) 2003-02-28 2004-09-24 Canon Inc 貼り合わせシステム
JP2004266070A (ja) 2003-02-28 2004-09-24 Canon Inc 貼り合わせシステム
FR2851846A1 (fr) 2003-02-28 2004-09-03 Canon Kk Systeme de liaison et procede de fabrication d'un substrat semi-conducteur
TWI242232B (en) 2003-06-09 2005-10-21 Canon Kk Semiconductor substrate, semiconductor device, and method of manufacturing the same
JP4371710B2 (ja) 2003-06-09 2009-11-25 キヤノン株式会社 半導体基体、半導体装置及びこれらの製造方法
JP4290038B2 (ja) 2004-03-03 2009-07-01 キヤノン株式会社 半導体装置及びトランジスタ並びに半導体装置の製造方法
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Also Published As

Publication number Publication date
JP4677331B2 (ja) 2011-04-27
US7911058B2 (en) 2011-03-22
JP2007150129A (ja) 2007-06-14
CN100517658C (zh) 2009-07-22
KR20070057052A (ko) 2007-06-04
US20110086493A1 (en) 2011-04-14
US20070120255A1 (en) 2007-05-31
US8088673B2 (en) 2012-01-03
KR100899905B1 (ko) 2009-05-28
CN1976012A (zh) 2007-06-06

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