TW200729347A - Semiconductor chip having island dispersion structure and method for manufacturing the same - Google Patents

Semiconductor chip having island dispersion structure and method for manufacturing the same

Info

Publication number
TW200729347A
TW200729347A TW095144130A TW95144130A TW200729347A TW 200729347 A TW200729347 A TW 200729347A TW 095144130 A TW095144130 A TW 095144130A TW 95144130 A TW95144130 A TW 95144130A TW 200729347 A TW200729347 A TW 200729347A
Authority
TW
Taiwan
Prior art keywords
semiconductor
semiconductor chip
manufacturing
same
silicon substrate
Prior art date
Application number
TW095144130A
Other languages
English (en)
Inventor
Kiyonori Oyu
Shigeru Aoki
Original Assignee
Elpida Memory Inc
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Elpida Memory Inc, Hitachi Ltd filed Critical Elpida Memory Inc
Publication of TW200729347A publication Critical patent/TW200729347A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/562—Protection against mechanical damage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/26—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device including materials for absorbing or reacting with moisture or other undesired substances, e.g. getters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Weting (AREA)
  • Element Separation (AREA)
  • Thin Film Transistor (AREA)
TW095144130A 2005-11-30 2006-11-29 Semiconductor chip having island dispersion structure and method for manufacturing the same TW200729347A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005345056A JP4677331B2 (ja) 2005-11-30 2005-11-30 島状の分散構造を備えた半導体チップおよびその製造方法

Publications (1)

Publication Number Publication Date
TW200729347A true TW200729347A (en) 2007-08-01

Family

ID=38086649

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095144130A TW200729347A (en) 2005-11-30 2006-11-29 Semiconductor chip having island dispersion structure and method for manufacturing the same

Country Status (5)

Country Link
US (2) US7911058B2 (zh)
JP (1) JP4677331B2 (zh)
KR (1) KR100899905B1 (zh)
CN (1) CN100517658C (zh)
TW (1) TW200729347A (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6098323B2 (ja) * 2013-04-17 2017-03-22 富士電機株式会社 半導体装置の製造方法
US10700012B2 (en) 2017-04-14 2020-06-30 Qualcomm Incorporated Porous silicon dicing
CN107132472B (zh) * 2017-05-23 2020-06-09 北京智芯微电子科技有限公司 一种用于分析深亚微米级soi工艺芯片的腐蚀溶液及方法
US10586751B2 (en) * 2017-08-03 2020-03-10 Advanced Semiconductor Engineering, Inc. Semiconductor package device and method of manufacturing the same
CN111699551B (zh) * 2019-01-15 2023-10-17 深圳市汇顶科技股份有限公司 芯片及芯片的制造方法
GB201917988D0 (en) * 2019-12-09 2020-01-22 Spts Technologies Ltd A semiconductor wafer dicing process

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JPH03250721A (ja) 1990-02-28 1991-11-08 Elna Co Ltd 電解コンデンサ装置
JPH071908B2 (ja) 1991-01-28 1995-01-11 富士ゼロックス株式会社 データ通信装置
JPH04290038A (ja) 1991-03-19 1992-10-14 Oki Electric Ind Co Ltd Ｉｓｄｎ一次群レイトインタフェースにおけるｓ点延長装置
JPH0743101B2 (ja) 1991-06-19 1995-05-15 株式会社タクマ ごみ焼却炉のストーカクリンカ防止装置
JPH08213292A (ja) 1995-02-02 1996-08-20 Hitachi Ltd 半導体基板及びその製造方法
JP3250721B2 (ja) 1995-12-12 2002-01-28 キヤノン株式会社 Ｓｏｉ基板の製造方法
TW420827B (en) 1996-12-05 2001-02-01 Canon Kk Fabrication process of SOI substrate
US6248664B1 (en) 1997-05-19 2001-06-19 Semiconductor Components Industries Llc Method of forming a contact
JP2000353797A (ja) * 1999-06-11 2000-12-19 Mitsubishi Electric Corp 半導体ウエハおよびその製造方法
JP4347960B2 (ja) 1999-09-14 2009-10-21 株式会社ディスコ ダイシング方法
JP2001358154A (ja) * 2000-06-16 2001-12-26 Toshiba Corp 半導体装置の製造方法
KR100405194B1 (ko) 2000-11-30 2003-11-10 텔레포스 주식회사 다공성 산화 실리콘층의 선택적 형성 방법, 이를 이용한 멀티칩 패키지 및 반도체 기판
AU2001248861A1 (en) 2000-11-30 2002-06-11 Telephus, Inc. Fabrication method of selectively oxidized porous silicon (sops) layer and multi-chip package using the same
JP2002344012A (ja) * 2001-05-17 2002-11-29 Matsushita Electric Ind Co Ltd 多孔性シリコン基板及びそれを用いた発光素子並びに多孔性シリコン基板の製造方法
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KR20040057238A (ko) 2002-12-26 2004-07-02 삼성전기주식회사 포토다이오드, 이를 구비한 광전자 집적회로장치 및 그제조방법
JP2004266070A (ja) 2003-02-28 2004-09-24 Canon Inc 貼り合わせシステム
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JP4290038B2 (ja) 2004-03-03 2009-07-01 キヤノン株式会社 半導体装置及びトランジスタ並びに半導体装置の製造方法
JP4371710B2 (ja) 2003-06-09 2009-11-25 キヤノン株式会社 半導体基体、半導体装置及びこれらの製造方法
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Also Published As

Publication number Publication date
KR100899905B1 (ko) 2009-05-28
CN100517658C (zh) 2009-07-22
US8088673B2 (en) 2012-01-03
JP2007150129A (ja) 2007-06-14
CN1976012A (zh) 2007-06-06
US20070120255A1 (en) 2007-05-31
KR20070057052A (ko) 2007-06-04
JP4677331B2 (ja) 2011-04-27
US20110086493A1 (en) 2011-04-14
US7911058B2 (en) 2011-03-22

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