TW200718763A - Polymeric barrier removal polishing slurry - Google Patents

Polymeric barrier removal polishing slurry

Info

Publication number
TW200718763A
TW200718763A TW095129492A TW95129492A TW200718763A TW 200718763 A TW200718763 A TW 200718763A TW 095129492 A TW095129492 A TW 095129492A TW 95129492 A TW95129492 A TW 95129492A TW 200718763 A TW200718763 A TW 200718763A
Authority
TW
Taiwan
Prior art keywords
aqueous slurry
copper interconnects
polishing slurry
polymeric barrier
removal polishing
Prior art date
Application number
TW095129492A
Other languages
English (en)
Other versions
TWI385226B (zh
Inventor
Terence M Thomas
Qian-Qiu Ye
Original Assignee
Rohm & Haas Elect Mat
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm & Haas Elect Mat filed Critical Rohm & Haas Elect Mat
Publication of TW200718763A publication Critical patent/TW200718763A/zh
Application granted granted Critical
Publication of TWI385226B publication Critical patent/TWI385226B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW095129492A 2005-09-08 2006-08-11 用於移除聚合物阻障之研磨漿液 TWI385226B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US71591805P 2005-09-08 2005-09-08

Publications (2)

Publication Number Publication Date
TW200718763A true TW200718763A (en) 2007-05-16
TWI385226B TWI385226B (zh) 2013-02-11

Family

ID=37763332

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095129492A TWI385226B (zh) 2005-09-08 2006-08-11 用於移除聚合物阻障之研磨漿液

Country Status (7)

Country Link
US (1) US7785487B2 (zh)
JP (1) JP5161448B2 (zh)
KR (1) KR101257115B1 (zh)
CN (1) CN1927975B (zh)
DE (1) DE102006041805B4 (zh)
FR (1) FR2890393B1 (zh)
TW (1) TWI385226B (zh)

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JP5204960B2 (ja) * 2006-08-24 2013-06-05 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
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US20100159807A1 (en) * 2008-12-22 2010-06-24 Jinru Bian Polymeric barrier removal polishing slurry
CN101906269A (zh) * 2009-06-08 2010-12-08 安集微电子科技(上海)有限公司 一种金属化学机械抛光的浆料及其使用方法
US20110318928A1 (en) 2010-06-24 2011-12-29 Jinru Bian Polymeric Barrier Removal Polishing Slurry
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CN103773244B (zh) * 2012-10-17 2017-08-11 安集微电子（上海）有限公司 一种碱性化学机械抛光液
CN103965788B (zh) * 2013-01-24 2017-10-13 安集微电子（上海）有限公司 一种碱性抛光液及抛光方法
JP2014216464A (ja) 2013-04-25 2014-11-17 日本キャボット・マイクロエレクトロニクス株式会社 スラリー組成物および基板研磨方法
CN104745089A (zh) * 2013-12-25 2015-07-01 安集微电子（上海）有限公司 一种用于阻挡层平坦化的化学机械抛光液及其使用方法
CN104745086A (zh) * 2013-12-25 2015-07-01 安集微电子（上海）有限公司 一种用于阻挡层平坦化的化学机械抛光液及其使用方法
CN106661431B (zh) * 2014-06-25 2019-06-28 嘉柏微电子材料股份公司 铜阻挡物的化学机械抛光组合物
CN107075345B (zh) * 2014-10-14 2019-03-12 花王株式会社 蓝宝石板用研磨液组合物
CN106916536B (zh) * 2015-12-25 2021-04-20 安集微电子（上海）有限公司 一种碱性化学机械抛光液
KR102422952B1 (ko) 2017-06-12 2022-07-19 삼성전자주식회사 금속막 연마용 슬러리 조성물 및 이를 이용하는 반도체 장치의 제조 방법
US11401441B2 (en) 2017-08-17 2022-08-02 Versum Materials Us, Llc Chemical mechanical planarization (CMP) composition and methods therefore for copper and through silica via (TSV) applications
US10465096B2 (en) 2017-08-24 2019-11-05 Versum Materials Us, Llc Metal chemical mechanical planarization (CMP) composition and methods therefore
JP7096884B2 (ja) * 2017-10-25 2022-07-06 サン－ゴバン セラミックス アンド プラスティクス，インコーポレイティド 材料除去作業を実施するための組成物及びその形成方法
KR102343435B1 (ko) * 2018-08-08 2021-12-24 삼성에스디아이 주식회사 구리 막 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 구리 막 연마 방법
US20200277514A1 (en) 2019-02-28 2020-09-03 Versum Materials Us, Llc Chemical Mechanical Polishing For Copper And Through Silicon Via Applications

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Also Published As

Publication number Publication date
FR2890393A1 (fr) 2007-03-09
CN1927975B (zh) 2010-06-16
DE102006041805A1 (de) 2007-03-15
US20070051917A1 (en) 2007-03-08
KR20070029079A (ko) 2007-03-13
TWI385226B (zh) 2013-02-11
JP2007116105A (ja) 2007-05-10
FR2890393B1 (fr) 2011-06-03
JP5161448B2 (ja) 2013-03-13
DE102006041805B4 (de) 2017-05-11
CN1927975A (zh) 2007-03-14
US7785487B2 (en) 2010-08-31
KR101257115B1 (ko) 2013-04-22

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