WO2004027840A3 - Process for etching silicon wafers - Google Patents

Process for etching silicon wafers Download PDF

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Publication number
WO2004027840A3
WO2004027840A3 PCT/US2003/029716 US0329716W WO2004027840A3 WO 2004027840 A3 WO2004027840 A3 WO 2004027840A3 US 0329716 W US0329716 W US 0329716W WO 2004027840 A3 WO2004027840 A3 WO 2004027840A3
Authority
WO
WIPO (PCT)
Prior art keywords
silicon wafers
etching silicon
source
water
hydroxide ions
Prior art date
Application number
PCT/US2003/029716
Other languages
French (fr)
Other versions
WO2004027840A2 (en
Inventor
Henry F Erk
Alexis Grabbe
James R Capstick
Judith A Schmidt
Annlie Sing
Guoqiang David Zhang
Thomas E Doane
Mark G Stinson
Original Assignee
Memc Electronic Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Memc Electronic Materials filed Critical Memc Electronic Materials
Publication of WO2004027840A2 publication Critical patent/WO2004027840A2/en
Publication of WO2004027840A3 publication Critical patent/WO2004027840A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)

Abstract

A process for etching silicon wafers using a caustic etchant in the form of an aqueous solution comprising water and a source of hydroxide ions and generally characterized by a lower concentration of water and/or higher concentration of source of hydroxide ions. In accordance with another embodiment, the caustic etchant includes a salt additive. The process produces silicon wafers with improved surface characteristics such as flatness and nanotopography.
PCT/US2003/029716 2002-09-18 2003-09-18 Process for etching silicon wafers WO2004027840A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US41154402P 2002-09-18 2002-09-18
US60/411,544 2002-09-18
US48766203P 2003-07-16 2003-07-16
US60/487,662 2003-07-16

Publications (2)

Publication Number Publication Date
WO2004027840A2 WO2004027840A2 (en) 2004-04-01
WO2004027840A3 true WO2004027840A3 (en) 2004-11-11

Family

ID=32033552

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/029716 WO2004027840A2 (en) 2002-09-18 2003-09-18 Process for etching silicon wafers

Country Status (3)

Country Link
US (1) US20040108297A1 (en)
TW (1) TW200411759A (en)
WO (1) WO2004027840A2 (en)

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JP4093793B2 (en) * 2002-04-30 2008-06-04 信越半導体株式会社 Semiconductor wafer manufacturing method and wafer
JP2004356252A (en) * 2003-05-28 2004-12-16 Sumitomo Mitsubishi Silicon Corp Method for working silicon wafer
US7699997B2 (en) * 2003-10-03 2010-04-20 Kobe Steel, Ltd. Method of reclaiming silicon wafers
JP4424039B2 (en) 2004-04-02 2010-03-03 株式会社Ｓｕｍｃｏ Manufacturing method of semiconductor wafer
TWI245317B (en) * 2004-05-21 2005-12-11 Mosel Vitelic Inc Method of wafer reclaiming, the wafer and producing method of the same
WO2006009668A1 (en) 2004-06-16 2006-01-26 Memc Electronic Materials, Inc. Silicon wafer etching process and composition
DE102004054566B4 (en) 2004-11-11 2008-04-30 Siltronic Ag Method and device for leveling a semiconductor wafer and semiconductor wafer with improved flatness
US20060138681A1 (en) * 2004-12-27 2006-06-29 Asml Netherlands B.V. Substrate and lithography process using the same
JP4517867B2 (en) * 2005-01-31 2010-08-04 株式会社Ｓｕｍｃｏ Etching solution for controlling surface shape of silicon wafer and method for producing silicon wafer using the etching solution
JP4835069B2 (en) * 2005-08-17 2011-12-14 株式会社Ｓｕｍｃｏ Silicon wafer manufacturing method
DE102005046726B4 (en) * 2005-09-29 2012-02-02 Siltronic Ag Non-polished monocrystalline silicon wafer and process for its production
JP2007204286A (en) * 2006-01-31 2007-08-16 Sumco Corp Method for manufacturing epitaxial wafer
KR101299131B1 (en) * 2006-05-10 2013-08-22 주식회사 동진쎄미켐 Etching composition for tft lcd
JP5017709B2 (en) 2006-09-07 2012-09-05 ジルトロニック アクチエンゲゼルシャフト Silicon wafer etching method and semiconductor silicon wafer manufacturing method
US20080206992A1 (en) * 2006-12-29 2008-08-28 Siltron Inc. Method for manufacturing high flatness silicon wafer
US8084280B2 (en) * 2009-10-05 2011-12-27 Akrion Systems, Llc Method of manufacturing a solar cell using a pre-cleaning step that contributes to homogeneous texture morphology
TWI398012B (en) * 2009-11-04 2013-06-01 Nat Chung Cheng University Inv Surface texturization of solar cell by using multiple-laser beams ablation and solar cell with surface texturization
US8835283B2 (en) * 2011-10-21 2014-09-16 Win Semiconductors Corp. Fabrication method for producing semiconductor chips with enhanced die strength
KR101804266B1 (en) * 2012-07-25 2017-12-04 동우 화인켐 주식회사 Texture etching solution composition and texture etching method of crystalline silicon wafers
US9274079B2 (en) * 2013-01-22 2016-03-01 Eci Technology, Inc. Etchant product analysis in alkaline etchant solutions
WO2015020243A1 (en) * 2013-08-06 2015-02-12 동우화인켐 주식회사 Texture-etching solution composition for crystalline silicon wafers and texture-etching method
US11629095B2 (en) * 2019-05-31 2023-04-18 Corning Incorporated Etching glass and glass ceramic materials in hydroxide containing molten salt
KR102548824B1 (en) * 2020-04-07 2023-06-27 세메스 주식회사 Substrate processing method and substrate processing apparatus
CN112503494B (en) * 2020-10-30 2023-05-23 裕鑫丰(广东)照明科技有限公司 Radiating fin for LED radiator and preparation method thereof

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EP0928017A2 (en) * 1997-12-09 1999-07-07 Shin-Etsu Handotai Company Limited Semiconductor wafer processing method and semiconductor wafers produced by the same

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
CLARCK ET AL.: "Cesium hydroxide (CsOH): a useful etchant for micromachining silicon", TECH. DIGEST OF THE 1988 SOLID STATE SENSOR AND ACTUATOR WORKSHOP, SC, USA, 06-09 JUNE 1988, 1988, NY, USA, pages 5 - 8, XP001193754 *
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Also Published As

Publication number Publication date
US20040108297A1 (en) 2004-06-10
TW200411759A (en) 2004-07-01
WO2004027840A2 (en) 2004-04-01

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