ATE473516T1 - Poliermittel und polierverfahren - Google Patents
Poliermittel und polierverfahrenInfo
- Publication number
- ATE473516T1 ATE473516T1 AT05720184T AT05720184T ATE473516T1 AT E473516 T1 ATE473516 T1 AT E473516T1 AT 05720184 T AT05720184 T AT 05720184T AT 05720184 T AT05720184 T AT 05720184T AT E473516 T1 ATE473516 T1 AT E473516T1
- Authority
- AT
- Austria
- Prior art keywords
- polishing
- polishing composition
- polished
- integrated circuit
- semiconductor integrated
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004063366 | 2004-03-08 | ||
JP2004305238A JP2005294798A (ja) | 2004-03-08 | 2004-10-20 | 研磨剤および研磨方法 |
PCT/JP2005/003912 WO2005086213A1 (ja) | 2004-03-08 | 2005-03-07 | 研磨剤および研磨方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE473516T1 true ATE473516T1 (de) | 2010-07-15 |
Family
ID=34921714
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT05720184T ATE473516T1 (de) | 2004-03-08 | 2005-03-07 | Poliermittel und polierverfahren |
Country Status (7)
Country | Link |
---|---|
US (3) | US20070004210A1 (de) |
EP (1) | EP1724819B1 (de) |
JP (1) | JP2005294798A (de) |
KR (1) | KR20070001994A (de) |
AT (1) | ATE473516T1 (de) |
DE (1) | DE602005022168D1 (de) |
WO (1) | WO2005086213A1 (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1833085A1 (de) * | 1998-12-28 | 2007-09-12 | Hitachi Chemical Company, Ltd. | Materialien für eine Reinigungsflüssigkeit für Metall, Reinigungsflüssigkeit für Metall, Herstellungsverfahren dafür und Reinigungsverfahren damit |
JP4316406B2 (ja) * | 2004-03-22 | 2009-08-19 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP2006086462A (ja) * | 2004-09-17 | 2006-03-30 | Fujimi Inc | 研磨用組成物およびそれを用いた配線構造体の製造法 |
US20080171441A1 (en) * | 2005-06-28 | 2008-07-17 | Asahi Glass Co., Ltd. | Polishing compound and method for producing semiconductor integrated circuit device |
JP5026710B2 (ja) * | 2005-09-02 | 2012-09-19 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
WO2007029465A1 (ja) * | 2005-09-09 | 2007-03-15 | Asahi Glass Company, Limited | 研磨剤、被研磨面の研磨方法および半導体集積回路装置の製造方法 |
CN101410956B (zh) * | 2006-04-03 | 2010-09-08 | Jsr株式会社 | 化学机械研磨用水系分散体和化学机械研磨方法 |
SG139699A1 (en) * | 2006-08-02 | 2008-02-29 | Fujimi Inc | Polishing composition and polishing process |
WO2008132983A1 (ja) | 2007-04-17 | 2008-11-06 | Asahi Glass Co., Ltd. | 研磨剤組成物および半導体集積回路装置の製造方法 |
JP2008307631A (ja) * | 2007-06-13 | 2008-12-25 | Asahi Glass Co Ltd | ガラス基板研磨方法 |
US8506661B2 (en) * | 2008-10-24 | 2013-08-13 | Air Products & Chemicals, Inc. | Polishing slurry for copper films |
JP2012109287A (ja) * | 2009-03-13 | 2012-06-07 | Asahi Glass Co Ltd | 半導体用研磨剤、その製造方法及び研磨方法 |
JP5877940B2 (ja) * | 2010-04-08 | 2016-03-08 | 株式会社フジミインコーポレーテッド | 銅及びシリコンが表面に露出したウェーハの研磨方法 |
US9629410B2 (en) | 2011-08-16 | 2017-04-25 | Trek Bicycle Corporation | Anti-pinch apparel closure |
RU2669598C2 (ru) | 2013-07-11 | 2018-10-12 | Басф Се | Композиция для химико-механической полировки (cmp), содержащая бензотриазольные производные в качестве ингибиторов коррозии |
US10035929B2 (en) * | 2015-11-30 | 2018-07-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | pH-adjuster free chemical mechanical planarization slurry |
JP2017110177A (ja) * | 2015-12-14 | 2017-06-22 | 日立化成株式会社 | 研磨液、研磨液セット及び基体の研磨方法 |
SG11202001013YA (en) * | 2017-08-14 | 2020-03-30 | Hitachi Chemical Co Ltd | Polishing liquid, polishing liquid set and polishing method |
US11608451B2 (en) * | 2019-01-30 | 2023-03-21 | Versum Materials Us, Llc | Shallow trench isolation (STI) chemical mechanical planarization (CMP) polishing with tunable silicon oxide and silicon nitride removal rates |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3397501B2 (ja) * | 1994-07-12 | 2003-04-14 | 株式会社東芝 | 研磨剤および研磨方法 |
US20040134873A1 (en) * | 1996-07-25 | 2004-07-15 | Li Yao | Abrasive-free chemical mechanical polishing composition and polishing process containing same |
JP3265199B2 (ja) * | 1996-09-30 | 2002-03-11 | 株式会社東芝 | 化学的機械研磨法、化学的機械研磨法に用いる研磨剤および半導体装置の製造方法 |
CN1161826C (zh) * | 1999-08-26 | 2004-08-11 | 日立化成工业株式会社 | 化学机械研磨用研磨剂及研磨方法 |
JP2001139937A (ja) * | 1999-11-11 | 2001-05-22 | Hitachi Chem Co Ltd | 金属用研磨液及び研磨方法 |
DE60225171T2 (de) * | 2001-10-26 | 2008-06-05 | AGC Seimi Chemical Co., Ltd., Chigasaki-shi | Poliermasse, verfahren zu deren herstellung und polierverfahren |
JPWO2003038883A1 (ja) * | 2001-10-31 | 2005-02-24 | 日立化成工業株式会社 | 研磨液及び研磨方法 |
JP2004031443A (ja) * | 2002-06-21 | 2004-01-29 | Hitachi Chem Co Ltd | 研磨液及び研磨方法 |
JP2004031442A (ja) * | 2002-06-21 | 2004-01-29 | Hitachi Chem Co Ltd | 研磨液及び研磨方法 |
WO2004101222A2 (en) * | 2003-05-12 | 2004-11-25 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for step-ii copper liner and other associated materials and method of using same |
EP1566420A1 (de) * | 2004-01-23 | 2005-08-24 | JSR Corporation | Wässrige Dispersionsaufschlämmung für chemisch/mechanische Polierung und Verwendung in einem Polierverfahren |
WO2008132983A1 (ja) * | 2007-04-17 | 2008-11-06 | Asahi Glass Co., Ltd. | 研磨剤組成物および半導体集積回路装置の製造方法 |
-
2004
- 2004-10-20 JP JP2004305238A patent/JP2005294798A/ja active Pending
-
2005
- 2005-03-07 EP EP05720184A patent/EP1724819B1/de not_active Not-in-force
- 2005-03-07 WO PCT/JP2005/003912 patent/WO2005086213A1/ja not_active Application Discontinuation
- 2005-03-07 AT AT05720184T patent/ATE473516T1/de not_active IP Right Cessation
- 2005-03-07 KR KR1020067017960A patent/KR20070001994A/ko not_active Application Discontinuation
- 2005-03-07 DE DE602005022168T patent/DE602005022168D1/de active Active
-
2006
- 2006-09-06 US US11/515,855 patent/US20070004210A1/en not_active Abandoned
-
2010
- 2010-08-20 US US12/805,817 patent/US20100323522A1/en not_active Abandoned
- 2010-08-20 US US12/859,793 patent/US20110008965A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
EP1724819A1 (de) | 2006-11-22 |
JP2005294798A (ja) | 2005-10-20 |
EP1724819A4 (de) | 2008-10-15 |
US20110008965A1 (en) | 2011-01-13 |
US20100323522A1 (en) | 2010-12-23 |
US20070004210A1 (en) | 2007-01-04 |
DE602005022168D1 (de) | 2010-08-19 |
EP1724819B1 (de) | 2010-07-07 |
KR20070001994A (ko) | 2007-01-04 |
WO2005086213A1 (ja) | 2005-09-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |