DE602005022168D1 - Poliermittel und polierverfahren - Google Patents

Poliermittel und polierverfahren

Info

Publication number
DE602005022168D1
DE602005022168D1 DE602005022168T DE602005022168T DE602005022168D1 DE 602005022168 D1 DE602005022168 D1 DE 602005022168D1 DE 602005022168 T DE602005022168 T DE 602005022168T DE 602005022168 T DE602005022168 T DE 602005022168T DE 602005022168 D1 DE602005022168 D1 DE 602005022168D1
Authority
DE
Germany
Prior art keywords
polishing
polishing composition
polished
integrated circuit
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005022168T
Other languages
English (en)
Inventor
Satoshi Takemiya
Sachie Shinmaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seimi Chemical Co Ltd
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Seimi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd, Seimi Chemical Co Ltd filed Critical Asahi Glass Co Ltd
Publication of DE602005022168D1 publication Critical patent/DE602005022168D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
DE602005022168T 2004-03-08 2005-03-07 Poliermittel und polierverfahren Active DE602005022168D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004063366 2004-03-08
JP2004305238A JP2005294798A (ja) 2004-03-08 2004-10-20 研磨剤および研磨方法
PCT/JP2005/003912 WO2005086213A1 (ja) 2004-03-08 2005-03-07 研磨剤および研磨方法

Publications (1)

Publication Number Publication Date
DE602005022168D1 true DE602005022168D1 (de) 2010-08-19

Family

ID=34921714

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005022168T Active DE602005022168D1 (de) 2004-03-08 2005-03-07 Poliermittel und polierverfahren

Country Status (7)

Country Link
US (3) US20070004210A1 (de)
EP (1) EP1724819B1 (de)
JP (1) JP2005294798A (de)
KR (1) KR20070001994A (de)
AT (1) ATE473516T1 (de)
DE (1) DE602005022168D1 (de)
WO (1) WO2005086213A1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI224128B (en) * 1998-12-28 2004-11-21 Hitachi Chemical Co Ltd Materials for polishing liquid for metal, polishing liquid for metal, method for preparation thereof and polishing method using the same
JP4316406B2 (ja) * 2004-03-22 2009-08-19 株式会社フジミインコーポレーテッド 研磨用組成物
JP2006086462A (ja) * 2004-09-17 2006-03-30 Fujimi Inc 研磨用組成物およびそれを用いた配線構造体の製造法
US20080171441A1 (en) * 2005-06-28 2008-07-17 Asahi Glass Co., Ltd. Polishing compound and method for producing semiconductor integrated circuit device
JP5026710B2 (ja) * 2005-09-02 2012-09-19 株式会社フジミインコーポレーテッド 研磨用組成物
JPWO2007029465A1 (ja) * 2005-09-09 2009-03-19 旭硝子株式会社 研磨剤、被研磨面の研磨方法および半導体集積回路装置の製造方法
WO2007116770A1 (ja) * 2006-04-03 2007-10-18 Jsr Corporation 化学機械研磨用水系分散体および化学機械研磨方法、ならびに化学機械研磨用水系分散体を調製するためのキット
SG139699A1 (en) * 2006-08-02 2008-02-29 Fujimi Inc Polishing composition and polishing process
KR20100015627A (ko) * 2007-04-17 2010-02-12 아사히 가라스 가부시키가이샤 연마제 조성물 및 반도체 집적 회로 장치의 제조 방법
JP2008307631A (ja) * 2007-06-13 2008-12-25 Asahi Glass Co Ltd ガラス基板研磨方法
US8506661B2 (en) * 2008-10-24 2013-08-13 Air Products & Chemicals, Inc. Polishing slurry for copper films
JP2012109287A (ja) * 2009-03-13 2012-06-07 Asahi Glass Co Ltd 半導体用研磨剤、その製造方法及び研磨方法
JP5877940B2 (ja) * 2010-04-08 2016-03-08 株式会社フジミインコーポレーテッド 銅及びシリコンが表面に露出したウェーハの研磨方法
US9629410B2 (en) 2011-08-16 2017-04-25 Trek Bicycle Corporation Anti-pinch apparel closure
KR102264348B1 (ko) * 2013-07-11 2021-06-11 바스프 에스이 부식 저해제로서 벤조트리아졸 유도체를 포함하는 화학-기계적 연마 조성물
US10035929B2 (en) * 2015-11-30 2018-07-31 Taiwan Semiconductor Manufacturing Co., Ltd. pH-adjuster free chemical mechanical planarization slurry
JP2017110177A (ja) * 2015-12-14 2017-06-22 日立化成株式会社 研磨液、研磨液セット及び基体の研磨方法
WO2019035161A1 (ja) * 2017-08-14 2019-02-21 日立化成株式会社 研磨液、研磨液セット及び研磨方法
US11608451B2 (en) * 2019-01-30 2023-03-21 Versum Materials Us, Llc Shallow trench isolation (STI) chemical mechanical planarization (CMP) polishing with tunable silicon oxide and silicon nitride removal rates

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3397501B2 (ja) * 1994-07-12 2003-04-14 株式会社東芝 研磨剤および研磨方法
US20040134873A1 (en) * 1996-07-25 2004-07-15 Li Yao Abrasive-free chemical mechanical polishing composition and polishing process containing same
JP3265199B2 (ja) * 1996-09-30 2002-03-11 株式会社東芝 化学的機械研磨法、化学的機械研磨法に用いる研磨剤および半導体装置の製造方法
TWI265567B (en) * 1999-08-26 2006-11-01 Hitachi Chemical Co Ltd Polishing medium for chemical-mechanical polishing, and polishing method
JP2001139937A (ja) * 1999-11-11 2001-05-22 Hitachi Chem Co Ltd 金属用研磨液及び研磨方法
WO2003036705A1 (fr) * 2001-10-26 2003-05-01 Asahi Glass Company, Limited Procede et compose de polissage, et son procede de production
KR100704690B1 (ko) * 2001-10-31 2007-04-10 히다치 가세고교 가부시끼가이샤 연마액 및 연마방법
JP2004031443A (ja) * 2002-06-21 2004-01-29 Hitachi Chem Co Ltd 研磨液及び研磨方法
JP2004031442A (ja) * 2002-06-21 2004-01-29 Hitachi Chem Co Ltd 研磨液及び研磨方法
WO2004101222A2 (en) * 2003-05-12 2004-11-25 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for step-ii copper liner and other associated materials and method of using same
EP1566420A1 (de) * 2004-01-23 2005-08-24 JSR Corporation Wässrige Dispersionsaufschlämmung für chemisch/mechanische Polierung und Verwendung in einem Polierverfahren
KR20100015627A (ko) * 2007-04-17 2010-02-12 아사히 가라스 가부시키가이샤 연마제 조성물 및 반도체 집적 회로 장치의 제조 방법

Also Published As

Publication number Publication date
WO2005086213A1 (ja) 2005-09-15
EP1724819B1 (de) 2010-07-07
EP1724819A1 (de) 2006-11-22
US20070004210A1 (en) 2007-01-04
US20110008965A1 (en) 2011-01-13
US20100323522A1 (en) 2010-12-23
JP2005294798A (ja) 2005-10-20
EP1724819A4 (de) 2008-10-15
KR20070001994A (ko) 2007-01-04
ATE473516T1 (de) 2010-07-15

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