TW200738858A - Metal oxide particles, polishing powder, polishing method of substrate and fabrication method of a semiconductor device - Google Patents

Metal oxide particles, polishing powder, polishing method of substrate and fabrication method of a semiconductor device

Info

Publication number
TW200738858A
TW200738858A TW096107127A TW96107127A TW200738858A TW 200738858 A TW200738858 A TW 200738858A TW 096107127 A TW096107127 A TW 096107127A TW 96107127 A TW96107127 A TW 96107127A TW 200738858 A TW200738858 A TW 200738858A
Authority
TW
Taiwan
Prior art keywords
polishing
oxide particles
metal oxide
substrate
semiconductor device
Prior art date
Application number
TW096107127A
Other languages
Chinese (zh)
Inventor
Youichi Machii
Masato Yoshida
Hiroki Terazaki
Hirotaka Akimoto
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of TW200738858A publication Critical patent/TW200738858A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/18—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F17/00—Compounds of rare earth metals
    • C01F17/20—Compounds containing only rare earth metals as the metal element
    • C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
    • C01F17/224—Oxides or hydroxides of lanthanides
    • C01F17/235—Cerium oxides or hydroxides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/60—Compounds characterised by their crystallite size
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Mechanical Engineering (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)

Abstract

The present invention provides metal oxide particles, polishing powder containing the metal oxide particles, polishing method applying the polishing powder for substrate, and fabrication method of a semiconductor device. The metal oxide particles are produced by heating metal compound at a temperature above 1000 DEG C; the size of crystal grain should be larger than 30nm, and the crystal strain is less than 1%. The present invention can be used to polish silicon dioxide film and metal inserted layer etc. at a high speed without damaging the surface.
TW096107127A 2006-03-03 2007-03-02 Metal oxide particles, polishing powder, polishing method of substrate and fabrication method of a semiconductor device TW200738858A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006057718A JP2009113993A (en) 2006-03-03 2006-03-03 Metal oxide particle, polishing material containing them, method for polishing substrate using the polishing material and method for producing semiconductor device manufactured by polishing

Publications (1)

Publication Number Publication Date
TW200738858A true TW200738858A (en) 2007-10-16

Family

ID=38459188

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096107127A TW200738858A (en) 2006-03-03 2007-03-02 Metal oxide particles, polishing powder, polishing method of substrate and fabrication method of a semiconductor device

Country Status (3)

Country Link
JP (1) JP2009113993A (en)
TW (1) TW200738858A (en)
WO (1) WO2007100093A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI475102B (en) * 2008-12-22 2015-03-01 Kao Corp Polishing composition for magnetic disk substrate

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5810752B2 (en) * 2011-08-31 2015-11-11 戸田工業株式会社 Lithium titanate particle powder, negative electrode active material particle powder for non-aqueous electrolyte secondary battery, and non-aqueous electrolyte secondary battery
JP5883609B2 (en) * 2011-10-12 2016-03-15 一般財団法人ファインセラミックスセンター Polishing material, polishing composition and polishing method
KR102007448B1 (en) * 2018-12-24 2019-08-05 주식회사 엔팩 Method for preparing cerium oxide nano particle
WO2024089920A1 (en) * 2022-10-27 2024-05-02 株式会社レゾナック Abrasive grains and method for selecting same, polishing liquid, multi-liquid type polishing liquid, polishing method, component manufacturing method, and semiconductor component manufacturing method

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH059006A (en) * 1991-06-28 1993-01-19 Toyo Ink Mfg Co Ltd Manufacture of ceramic powders
US5851507A (en) * 1996-09-03 1998-12-22 Nanomaterials Research Corporation Integrated thermal process for the continuous synthesis of nanoscale powders
JP3462052B2 (en) * 1996-09-30 2003-11-05 日立化成工業株式会社 Cerium oxide abrasive and substrate polishing method
JPH11279537A (en) * 1998-03-25 1999-10-12 C I Kasei Co Ltd Aqueous dispersion of cerium oxide ultramicroparticle and its production
EP2246301A1 (en) * 1999-05-28 2010-11-03 Hitachi Chemical Co., Ltd. Method for producing cerium oxide
JP2003514745A (en) * 1999-11-17 2003-04-22 キャボット コーポレイション Ceria composition and method for producing the same
EP1378489A1 (en) * 2002-07-03 2004-01-07 Eidgenössische Technische Hochschule Zürich Metal oxides prepared by flame spray pyrolysis

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI475102B (en) * 2008-12-22 2015-03-01 Kao Corp Polishing composition for magnetic disk substrate
US9070399B2 (en) 2008-12-22 2015-06-30 Kao Corporation Polishing liquid composition for magnetic-disk substrate

Also Published As

Publication number Publication date
JP2009113993A (en) 2009-05-28
WO2007100093A1 (en) 2007-09-07

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