TW200711107A - Semiconductor storage device and manufacturing method thereof - Google Patents

Semiconductor storage device and manufacturing method thereof

Info

Publication number
TW200711107A
TW200711107A TW095116726A TW95116726A TW200711107A TW 200711107 A TW200711107 A TW 200711107A TW 095116726 A TW095116726 A TW 095116726A TW 95116726 A TW95116726 A TW 95116726A TW 200711107 A TW200711107 A TW 200711107A
Authority
TW
Taiwan
Prior art keywords
chalcogenide material
layer
phase change
change memory
film
Prior art date
Application number
TW095116726A
Other languages
English (en)
Chinese (zh)
Inventor
Yuichi Matsui
Tomio Iwasaki
Norikatsu Takaura
Kenzo Kurotsuchi
Original Assignee
Renesas Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Tech Corp filed Critical Renesas Tech Corp
Publication of TW200711107A publication Critical patent/TW200711107A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/861—Thermal details
    • H10N70/8616—Thermal insulation means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
TW095116726A 2005-05-19 2006-05-11 Semiconductor storage device and manufacturing method thereof TW200711107A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005146387 2005-05-19
JP2006096616A JP2006352082A (ja) 2005-05-19 2006-03-31 半導体記憶装置及びその製造方法

Publications (1)

Publication Number Publication Date
TW200711107A true TW200711107A (en) 2007-03-16

Family

ID=37462221

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095116726A TW200711107A (en) 2005-05-19 2006-05-11 Semiconductor storage device and manufacturing method thereof

Country Status (5)

Country Link
US (2) US20060266992A1 (enExample)
JP (2) JP2006352082A (enExample)
KR (1) KR20060120463A (enExample)
CN (1) CN100521224C (enExample)
TW (1) TW200711107A (enExample)

Cited By (1)

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US9583509B2 (en) 2009-08-07 2017-02-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein an oxide semiconductor layer has a degree of crystallization of 80% or more

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KR100851548B1 (ko) * 2007-01-23 2008-08-11 삼성전자주식회사 상변화 기억 소자 및 그 형성 방법
JP2008288292A (ja) * 2007-05-16 2008-11-27 Renesas Technology Corp 半導体記憶装置及びその製造方法
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US8410607B2 (en) * 2007-06-15 2013-04-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor memory structures
KR100891523B1 (ko) 2007-07-20 2009-04-06 주식회사 하이닉스반도체 상변화 기억 소자
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JP5274799B2 (ja) * 2007-08-22 2013-08-28 ルネサスエレクトロニクス株式会社 半導体記憶装置
KR20090026580A (ko) * 2007-09-10 2009-03-13 삼성전자주식회사 저항 메모리 소자 및 그 형성방법
JP2009135219A (ja) 2007-11-29 2009-06-18 Renesas Technology Corp 半導体装置およびその製造方法
JP4532605B2 (ja) 2008-06-18 2010-08-25 キヤノンアネルバ株式会社 相変化メモリ素子、相変化メモリセル、真空処理装置及び相変化メモリ素子の製造方法
KR100960013B1 (ko) * 2008-07-24 2010-05-28 주식회사 하이닉스반도체 저항성 메모리 소자 및 그 제조 방법
KR101019989B1 (ko) * 2008-10-21 2011-03-09 주식회사 하이닉스반도체 상변화 메모리 소자 및 그 제조방법
CN101814578B (zh) * 2009-02-20 2012-03-21 台湾积体电路制造股份有限公司 半导体元件及其制造方法
JPWO2010140210A1 (ja) * 2009-06-01 2012-11-15 株式会社日立製作所 半導体記憶装置およびその製造方法
US8138056B2 (en) 2009-07-03 2012-03-20 International Business Machines Corporation Thermally insulated phase change material memory cells with pillar structure
US8105859B2 (en) * 2009-09-09 2012-01-31 International Business Machines Corporation In via formed phase change memory cell with recessed pillar heater
US8247789B2 (en) 2010-08-31 2012-08-21 Micron Technology, Inc. Memory cells and methods of forming memory cells
US8227785B2 (en) * 2010-11-11 2012-07-24 Micron Technology, Inc. Chalcogenide containing semiconductors with chalcogenide gradient
US9202822B2 (en) 2010-12-17 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101699713B1 (ko) 2011-09-14 2017-01-26 인텔 코포레이션 저항 변화 메모리 소자용 전극
JP2013175570A (ja) * 2012-02-24 2013-09-05 National Institute Of Advanced Industrial & Technology 半導体記憶装置およびその製造方法
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US9047938B2 (en) 2013-02-25 2015-06-02 International Business Machines Corporation Phase change memory management
US20150037613A1 (en) * 2013-07-30 2015-02-05 Seagate Technology Llc Magnetic devices with overcoats
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KR20160049299A (ko) * 2014-10-27 2016-05-09 에스케이하이닉스 주식회사 전자 장치 및 그 제조 방법
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CN108987362B (zh) * 2017-05-31 2020-10-16 华邦电子股份有限公司 内连线结构、其制造方法与半导体结构
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US9583509B2 (en) 2009-08-07 2017-02-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein an oxide semiconductor layer has a degree of crystallization of 80% or more
TWI576990B (zh) * 2009-08-07 2017-04-01 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US9837442B2 (en) 2009-08-07 2017-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a plurality of N-channel transistors wherein the oxide semiconductor layer comprises a portion being in an oxygen-excess state

Also Published As

Publication number Publication date
US20060266992A1 (en) 2006-11-30
JP2006352082A (ja) 2006-12-28
JP2011091433A (ja) 2011-05-06
CN1866533A (zh) 2006-11-22
KR20060120463A (ko) 2006-11-27
US20110215288A1 (en) 2011-09-08
CN100521224C (zh) 2009-07-29

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